JPH0222473A - Ceramic material manufacturing method and high temperature reactor for its manufacturing - Google Patents

Ceramic material manufacturing method and high temperature reactor for its manufacturing

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Publication number
JPH0222473A
JPH0222473A JP17019288A JP17019288A JPH0222473A JP H0222473 A JPH0222473 A JP H0222473A JP 17019288 A JP17019288 A JP 17019288A JP 17019288 A JP17019288 A JP 17019288A JP H0222473 A JPH0222473 A JP H0222473A
Authority
JP
Japan
Prior art keywords
chamber
reaction
gas
heating
temperature reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17019288A
Other languages
Japanese (ja)
Inventor
Takashi Ogawa
貴史 小川
Eizaburo Kanda
栄三郎 神田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP17019288A priority Critical patent/JPH0222473A/en
Publication of JPH0222473A publication Critical patent/JPH0222473A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、SIC、S!、J4 、BN等のようなセラ
ミックスの被覆体や成形体(以下、セラミックス材とい
う。)を、化学気相反応法(以下、CVD法という。)
によって、製品の品質が安定し、コストを減少し得、高
温反応炉の発熱体の損傷度を大幅に減少し得るセラミッ
クス材の製造方法及びその製造用高温反応炉に関するも
のである。
[Detailed Description of the Invention] [Industrial Application Field] The present invention is applicable to SIC, S! , J4, BN, and the like (hereinafter referred to as ceramic materials) using a chemical vapor phase reaction method (hereinafter referred to as CVD method).
The present invention relates to a method for manufacturing a ceramic material, which can stabilize the quality of the product, reduce costs, and significantly reduce the degree of damage to the heating element of the high-temperature reactor, and a high-temperature reactor for producing the same.

[従来の技術] SIC、S!3N4.13N等のようなセラミックスは
、高融点、不活性、熱的高安定度、高熱伝導度等に優れ
た工業材料であって、各種の分野で幅広く用いられてい
る。
[Prior art] SIC, S! Ceramics such as 3N4.13N are industrial materials with excellent properties such as high melting point, inertness, high thermal stability, and high thermal conductivity, and are widely used in various fields.

このようなセラミックスは、反応ガスを原料とするCV
D法によって製造できることが広く知られている。すな
わち、たとえば、8Nは、ハロゲン化ホウ素ガスとアン
モニアガスとを反応ガスとして、反応温度145ト23
00℃、圧力1〜5 Torrといった条件で反応させ
ることによって製造し得る。
Such ceramics are produced by CV
It is widely known that it can be manufactured by method D. That is, for example, 8N uses boron halide gas and ammonia gas as reaction gases, and the reaction temperature is 145 to 23.
It can be produced by reacting under conditions such as 00°C and a pressure of 1 to 5 Torr.

しかして、通常、このようなセラミックスを、CVD法
によって製造する場合、チャンバー内に加熱体によって
加熱される真空反応室を設置した装置を使用し、反応室
内に型材を置き、型材を所定温度に加熱した状態でノズ
ル等を用いて反応ガスを導入して特定の圧力下で型材上
にセラミックスを析出させ、所望の被覆体とするか、又
は、型材上に析出したセラミックスを型材から剥離して
成形体としてセラミックス材を得るのであるが、この際
、型材を加熱するための手段として、高周波加熱方式あ
るいは抵抗加熱方式が採られている。
However, when such ceramics are usually manufactured by the CVD method, an apparatus is used in which a vacuum reaction chamber heated by a heating element is installed in the chamber, a mold is placed in the reaction chamber, and the mold is heated to a predetermined temperature. Either by introducing a reactive gas using a nozzle or the like in a heated state and depositing ceramics on the mold material under a specific pressure to form the desired coating, or by peeling the ceramics deposited on the mold material from the mold material. A ceramic material is obtained as a molded body, and at this time, a high frequency heating method or a resistance heating method is adopted as a means for heating the mold material.

[発明が解決しようとする課題] しかしながら、CVD処理を行なう場合の加熱方式の一
つである高周波加熱方式は、誘導加熱を利用するため、
使用する型材の種類、大きさ、形状が制限される問題が
あり、一方、抵抗加熱方式においては、発熱体素材にグ
ラファイトを用いることによって型材の種類、大きさ、
形状等に制限されずに加熱できるのであるが、原料反応
ガスとしてアンモニアガス等のような活性ガスを使用す
る場合に、反応温度が1450℃以上の高温で行なうも
のであることもあって、発熱体自体が原料反応ガス及び
原料反応ガスから生成されるガスと反応して腐食損傷し
易いという問題があり、さらに、発熱体をクロム、モリ
ブデン、タングステン等の高融点金属で製作する方法も
採られるが、これらの素材は、加工性に乏しく、かつ、
大型形状のものを製作しにくいために、CVD法によっ
てセラミックス材を製造するに際して使用し得る型材の
大きさ、形状がきわめて限定されるという問題もあった
[Problems to be Solved by the Invention] However, since the high-frequency heating method, which is one of the heating methods for CVD processing, uses induction heating,
There is a problem in that the type, size, and shape of the mold material to be used are limited.On the other hand, in the resistance heating method, the type, size, and shape of the mold material are limited by using graphite as the heating element material.
Although it can be heated without being restricted by shape, etc., when an active gas such as ammonia gas is used as the raw material reaction gas, the reaction temperature is higher than 1450°C, so it generates heat. There is a problem that the heating element itself is susceptible to corrosion damage due to reaction with the raw material reaction gas and the gas generated from the raw material reaction gas, and there is also a method of manufacturing the heating element from high melting point metals such as chromium, molybdenum, and tungsten. However, these materials have poor processability and
Since it is difficult to manufacture large-sized shapes, there is also the problem that the size and shape of mold materials that can be used in manufacturing ceramic materials by the CVD method are extremely limited.

しかして、これらのために、得られるセラミックス材の
品質が不安定となり、コスト高になるという問題もあっ
た。
However, due to these factors, the quality of the obtained ceramic material becomes unstable and there is also a problem that the cost becomes high.

本発明は、前記問題を解決し、安定した品質の製品を低
コストで製造することができる製造方法と該製造方法に
好適な反応炉を得ることを目的とするものである。
The object of the present invention is to solve the above-mentioned problems and provide a manufacturing method capable of producing products of stable quality at low cost, and a reactor suitable for the manufacturing method.

[課題を解決するための手段] 本発明者らは、前記問題を解決し、前記目的を達成する
ために、発熱体として高温において活性ガスに対する耐
食性が乏しいとされているグラファイトを用いて鋭意研
究を進めた結果、グラファイト製発熱体表面に適量の不
活性ガスを導入し、発熱室の内圧を反応室の内圧よりも
若干高く保つことによって目的を達し得ることを見出し
て本発明を完成するに至った。すなわち、本発明の第1
の実施態様は、反応ガスを導入し高温において型材上に
セラミックス材を生成せしめる化学気相反応法において
、高温反応炉における加熱室へ不活性ガスを導入し、か
つ、該加熱室の内圧を反応室の内圧より高く保ちながら
反応ガスを反応せしめるセラミックス材の製造方法であ
り、第2の実施態様は、反応ガスを導入し高温において
型材上にセラミックス材を生成しめる化学気相処理炉に
おいて、二重外壁内に冷水を通し冷却能を持たせたチャ
ンバーと、該チャンバーに固設部材を介して固定された
反応室と、該反応室の外壁面に隣接して設けられた隔壁
と、該隔壁とチャンバー間に設けられた加熱室と、該加
熱室内にチャンバーに絶縁部材を介して固設されて設置
された発熱体と、チャンバー外部より加熱室へガス圧力
調整器によってガス圧を調整された不活性ガスを導入す
る不活性ガス導入管と、チャンバー外部より反応室へ反
応ガスを導入する反応ガス導入管とを設けてなるセラミ
ックス材の製造用高温反応炉である。
[Means for Solving the Problems] In order to solve the above problems and achieve the above objects, the present inventors have conducted intensive research using graphite, which is said to have poor corrosion resistance against active gases at high temperatures, as a heating element. As a result of further research, it was discovered that the objective could be achieved by introducing an appropriate amount of inert gas to the surface of the graphite heating element and maintaining the internal pressure of the heating chamber slightly higher than the internal pressure of the reaction chamber, and completed the present invention. It's arrived. That is, the first aspect of the present invention
In this embodiment, an inert gas is introduced into a heating chamber in a high-temperature reactor, and the internal pressure of the heating chamber is reduced by a chemical vapor phase reaction method in which a reactive gas is introduced and a ceramic material is produced on a mold material at high temperature. The second embodiment is a method for manufacturing a ceramic material in which a reaction gas is caused to react while maintaining the pressure higher than the internal pressure of a chamber.The second embodiment is a method for manufacturing a ceramic material in which a reaction gas is introduced and a ceramic material is produced on a mold material at a high temperature in a chemical vapor treatment furnace. A chamber in which cold water is passed through a heavy outer wall to provide cooling ability, a reaction chamber fixed to the chamber via a fixed member, a partition wall provided adjacent to the outer wall surface of the reaction chamber, and the partition wall. and a heating chamber provided between the heating chamber and the heating chamber, a heating element fixedly installed in the chamber via an insulating member within the heating chamber, and a gas pressure adjusted from the outside of the chamber to the heating chamber by a gas pressure regulator. This is a high-temperature reactor for producing ceramic materials, which is provided with an inert gas introduction pipe for introducing an inert gas and a reaction gas introduction pipe for introducing a reaction gas from the outside of the chamber into a reaction chamber.

次に、添付の図面に基づいて本発明高温反応炉の構成例
を説明する。
Next, a configuration example of the high temperature reactor of the present invention will be explained based on the attached drawings.

第1図は、本発明高温反応炉の一実施例を竪型炉として
示す縦断面図、第2図は、本発明高温反応炉の別の実施
例を模型炉として示す直径方向の断面図、第3図は、本
発明高温反応炉を模型炉としたときの内部構成例を示す
斜視図である。
FIG. 1 is a longitudinal cross-sectional view showing one embodiment of the high-temperature reactor of the present invention as a vertical furnace; FIG. 2 is a diametrical cross-sectional view showing another embodiment of the high-temperature reactor of the present invention as a model furnace; FIG. 3 is a perspective view showing an example of the internal configuration when the high temperature reactor of the present invention is used as a model furnace.

1は、チャンバーであって、たとえば、SUS製の円筒
型をし、外壁を二重壁に形成し、内部に冷却水を通すた
めの冷水人口2及び冷水出口3が設けられており、CV
D法における反応が1450℃以上の高温で処理される
ためチャンバ−1外部への放熱を緩和し得るようになっ
ており、チャンバー1の一端側は、O−リング4を介し
て気密状態に着脱自在にされている。5は、反応室であ
って、たとえばグラファイトで箱型に形成され、底面(
又は、左側板)5−1には、反応ガス導入管6か接続す
る反応ガス導入孔7が設けられ、上面(又は、右側板〉
5−2には排気孔8が設けられ、固設部材9を介してチ
ャンバー1に固設され、内部中央部に取付けた型材10
の周囲に反応ガスを充満し得るようになっている。11
は、隔壁であって、絶縁材が使用され、反応室5の外壁
面に隣接して設けられ、反応室5への伝熱を効率よく行
ない得るようになっている。12は、加熱室であって、
隔壁11とチャンバー1との間に形成され、内部にグラ
ファイト製の発熱体13が絶縁部材14を介してチャン
バー1に固設され電源(図示せず〉に接続されて装着さ
れ、不活性ガス導入管15が接続する導入孔16が設け
られていて、不活性ガスをガス圧力調整器(図示せず)
によってガス圧を調整して導入し、又、反応室の内圧よ
りも加熱室12の内圧の方を高くし得るようになってい
る。17は、排気管接続部であって、排風機(図示せず
)に接続され、反応炉を吸引する。
1 is a cylindrical chamber made of, for example, SUS, the outer wall is formed into a double wall, and a cold water port 2 and a cold water outlet 3 are provided for passing cooling water inside;
Since the reaction in Method D is processed at a high temperature of 1450°C or higher, heat radiation to the outside of the chamber 1 can be alleviated, and one end of the chamber 1 can be attached and detached in an airtight state via an O-ring 4. It's at your disposal. 5 is a reaction chamber made of, for example, graphite and shaped like a box, with a bottom surface (
Or, the left side plate) 5-1 is provided with a reaction gas introduction hole 7 to which the reaction gas introduction pipe 6 is connected, and the upper surface (or the right side plate)
5-2 is provided with an exhaust hole 8, is fixed to the chamber 1 via a fixed member 9, and has a molded member 10 attached to the center of the interior.
The surrounding area can be filled with a reactive gas. 11
is a partition wall made of an insulating material and provided adjacent to the outer wall surface of the reaction chamber 5 so that heat can be efficiently transferred to the reaction chamber 5. 12 is a heating chamber,
A heating element 13 made of graphite is formed between the partition wall 11 and the chamber 1, is fixedly attached to the chamber 1 through an insulating member 14, and connected to a power source (not shown), and an inert gas is introduced. An introduction hole 16 to which a pipe 15 is connected is provided, and an inert gas is supplied to a gas pressure regulator (not shown).
The gas pressure is adjusted and introduced, and the internal pressure of the heating chamber 12 can be made higher than the internal pressure of the reaction chamber. Reference numeral 17 denotes an exhaust pipe connection part, which is connected to an exhaust fan (not shown) and sucks the reactor.

なお、本発明高温反応炉は、第1図に示すような竪型、
又は、第2図及び第3図に示すような模型のどちらの形
式をもとり得るものであり、加熱室12も反応室5の左
右両側だけでなく、さらに、上、下いずれか又は両方に
付設することもできるものであり、この場合には、上側
又は下側又は両側に設ける発熱体13は、補助的なもの
として小容量のものとすることもできる。又、隔壁11
は、反応室5及び加熱室12の周囲を絶縁材で囲むよう
に形成してもよい。
The high-temperature reactor of the present invention has a vertical type as shown in FIG.
Alternatively, it can take the form of either of the models shown in FIGS. 2 and 3, and the heating chambers 12 may be attached not only to the left and right sides of the reaction chamber 5, but also to either the top, the bottom, or both. In this case, the heating element 13 provided on the upper side, the lower side, or both sides can be of small capacity as an auxiliary element. Also, the partition wall 11
may be formed so that the reaction chamber 5 and heating chamber 12 are surrounded by an insulating material.

本発明におけるセラミックス材の製造は、このような高
温反応炉を使用して行なうものであって、型材13の反
応室5内への設置、反応ガスを反応ガス導入管6を通し
て反応室5への導入、加熱、その他の製造条件は、従来
の条件通り行なえばよいのであるか、本発明においては
、加熱室12内へガス圧力を調整して不活性ガスたとえ
ばアルゴンガスを不活性導入管15を通して導入して、
加熱室12の内圧を反応室5の内圧よりも2〜5 To
rr程度高くなるように維持して加熱するものであって
、このことによって、反応室5内の腐食性の反応ガスや
生成カスが加熱室12中へ浸入して発熱体13を腐食劣
化させることを防止し得るものである。
The production of ceramic materials in the present invention is carried out using such a high-temperature reactor. In the present invention, the gas pressure is adjusted and an inert gas such as argon gas is introduced into the heating chamber 12 through the inert inlet pipe 15. By introducing
The internal pressure of the heating chamber 12 is 2 to 5 To lower than the internal pressure of the reaction chamber 5.
This is to maintain and heat the heating element at a temperature of about rr, which prevents corrosive reaction gas and generated scum in the reaction chamber 5 from penetrating into the heating chamber 12 and corroding and deteriorating the heating element 13. This is something that can be prevented.

[実施例] 次に、本発明の実施例を述べる。[Example] Next, examples of the present invention will be described.

実施例に 型外壁層内に冷却水を通し得る内径850 rran、
長さ1300℃my+のSO3製のチャンバーに、固設
部材で固設された幅300ITIIT+、長さ400 
mm、高さ300rItll+のグラファイト製の反応
室内の中央部に、直径250m、厚さ10m+nのグラ
ファイト製円板を型材として取付け、グラファイト製の
発熱体を固設したグラファイト製の加熱室を設け、5I
JSとグラファイトとを接続して製作した反応ガス導入
管及び不活性ガス導入管を設けた高温反応炉を使用し、
反応室内に反応ガスとして13cj32005CCH、
NH31000SCC)lを反応ガス導入管を通して導
入し、1900℃、I Torrの条件で5時間反応さ
せることにより型材上にBNを合成しな。この間、加熱
室内へは、アルゴンガスを不活性ガス導入管を通してア
ルゴンガスの流量を0〜15008CC)fまで変化さ
せるとともに、加熱室内の圧力を反応室内の圧力よりも
2Torr高く維持した。
In the example, the inner diameter is 850 rran, which allows cooling water to pass through the mold outer wall layer.
Width 300ITIIT+ and length 400mm fixed with fixed members in a SO3 chamber with a length of 1300℃my+
A graphite heating chamber with a graphite heating element fixed thereon was installed in the center of a graphite reaction chamber with a diameter of 250 m and a thickness of 10 m + n as a mold material in the center of a graphite reaction chamber with a height of 300 m and a height of 5 I.
Using a high-temperature reactor equipped with a reaction gas introduction pipe and an inert gas introduction pipe made by connecting JS and graphite,
13cj32005CCH as a reaction gas in the reaction chamber,
BN was synthesized on the mold material by introducing NH31000SCC)l through the reaction gas introduction pipe and reacting at 1900° C. and I Torr for 5 hours. During this time, argon gas was introduced into the heating chamber through an inert gas introduction pipe, and the flow rate of argon gas was varied from 0 to 15008 CC)f, and the pressure inside the heating chamber was maintained at 2 Torr higher than the pressure inside the reaction chamber.

反応終了後、発熱体の損傷度を、発熱体の重量減として
測定しな。その結果は、第1表に示す如くであり、本発
明高温反応炉を使用し、本発明製造方法によって加熱室
に不活性ガスを適量導入することにより、加熱室内圧を
反応室内圧より高くすることにより、グラファイト製発
熱体の腐食損傷度を大幅に減少することが可能であるこ
とが認められた。
After the reaction is complete, measure the degree of damage to the heating element as the weight loss of the heating element. The results are shown in Table 1. By using the high temperature reactor of the present invention and introducing an appropriate amount of inert gas into the heating chamber according to the manufacturing method of the present invention, the pressure in the heating chamber is made higher than the pressure in the reaction chamber. It has been found that it is possible to significantly reduce the degree of corrosion damage to graphite heating elements.

第 表 その結果は、第2表に示す如くであって、本発明・高温
反応炉を使用する本発明製造方法によって、グラファイ
ト製発熱体の腐食損傷度を大幅に減少し得ることが可能
であることが認められた。
Table 2 The results are as shown in Table 2, which shows that the degree of corrosion damage to graphite heating elements can be significantly reduced by the present invention and the manufacturing method of the present invention using a high-temperature reactor. This was recognized.

第  2  表 註:激しく損傷とは、発熱体重量減10〜20%損傷中
度とは、発熱体重量減5〜9% 損傷軽微とは、発熱体重量減5%未満 実施例2 反応ガスを、NH3、Boo 5CCH,SiCρ、 
80 SCCM、H27005CCI4とし、1500
℃、10 Torrの条件で5時間反応させた以外は、
実施例1と同様に処理し、実施例1と同様にして加熱体
の損傷度を測定した。
Table 2 Note: Severe damage means a weight loss of 10-20%, moderate damage means a weight loss of 5-9%, and light damage means a weight loss of less than 5%. , NH3, Boo 5CCH, SiCρ,
80 SCCM, H27005CCI4, 1500
Except for reacting for 5 hours at ℃ and 10 Torr.
It was treated in the same manner as in Example 1, and the degree of damage to the heating element was measured in the same manner as in Example 1.

[発明の効果] 本発明は、化学気相反応法によってセラミックス材を製
造するに際して、加圧室へ不活性ガスを適量導入し、加
熱室の内圧を反応室の内圧よりも高く維持するようにし
て反応させる製造方法であり、高温反応炉であるから、
SIC、Si3N4. BN等のセラミックス材製造に
おける高温反応炉の発熱体の損傷度を大幅に減少させる
ことを可能とし得、製品の品質を安定し得、コスト減少
を可能とし得るなど優れた効果が認められる。
[Effects of the Invention] The present invention, when producing ceramic materials by a chemical vapor phase reaction method, introduces an appropriate amount of inert gas into a pressurizing chamber to maintain the internal pressure of the heating chamber higher than the internal pressure of the reaction chamber. This is a production method in which the reaction is carried out using a high-temperature reactor.
SIC, Si3N4. Excellent effects have been recognized, such as making it possible to significantly reduce the degree of damage to heating elements in high-temperature reactors used in the production of ceramic materials such as BN, stabilizing product quality, and making it possible to reduce costs.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明高温反応炉の一実施例を竪型炉として
示す縦断面図、第2図は、本発明高温反応炉の別の実施
例を模型炉として示す直径方向の断面図、第3図は、本
発明高温反応炉を横型炉としたときの内部構成例を示す
斜視図である。 1・・・チャンバー、2・・・冷水入口、3・・・冷水
出口、5・・・反応室、6・・・反応ガス導入管、9・
・・固設部材、10・・・型材、11・・・隔壁、12
・・・加熱室、13・・・発熱体、14・・・絶縁部材
、15・・・不活性ガス導入管、17・・・排気管接続
部 第 図
FIG. 1 is a longitudinal cross-sectional view showing one embodiment of the high-temperature reactor of the present invention as a vertical furnace; FIG. 2 is a diametrical cross-sectional view showing another embodiment of the high-temperature reactor of the present invention as a model furnace; FIG. 3 is a perspective view showing an example of the internal configuration when the high-temperature reactor of the present invention is a horizontal furnace. DESCRIPTION OF SYMBOLS 1... Chamber, 2... Cold water inlet, 3... Cold water outlet, 5... Reaction chamber, 6... Reaction gas introduction pipe, 9...
...Fixed member, 10... Shape material, 11... Partition wall, 12
...Heating chamber, 13...Heating element, 14...Insulating member, 15...Inert gas introduction pipe, 17...Exhaust pipe connection diagram

Claims (2)

【特許請求の範囲】[Claims] (1)反応ガスを導入し高温において型材上にセラミッ
クス材を生成せしめる化学気相反応法において、高温反
応炉における加熱室へ不活性ガスを導入し、かつ、該加
熱室の内圧を反応室の内圧より高く保ちながら反応ガス
を反応せしめることを特徴とするセラミックス材の製造
方法。
(1) In the chemical vapor phase reaction method in which a reactive gas is introduced and a ceramic material is produced on a mold material at high temperature, an inert gas is introduced into a heating chamber in a high-temperature reactor, and the internal pressure of the heating chamber is A method for producing a ceramic material characterized by reacting a reactive gas while maintaining the internal pressure higher than the internal pressure.
(2)反応ガスを導入し高温において型材上にセラミッ
クス材を生成しめる化学気相反応処理炉において、二重
外壁内に冷水を通し冷却能を持たせたチャンバーと、該
チャンバーに固設部材を介して固設された反応室と、該
反応室の外壁面に隣接して設けられた隔壁と、該隔壁と
チャンバー間に設けられた加熱室と、該加熱室内にチャ
ンバーに絶縁部材を介して固設されて設置された発熱体
と、チャンバー外部より加熱室へガス圧力調整器によっ
てガス圧を調整された不活性ガスを導入する不活性ガス
導入管と、チャンバー外部より反応室へ反応ガスを導入
する反応ガス導入管とを設けてなることを特徴とするセ
ラミックス材の製造用高温反応炉。
(2) In a chemical vapor phase reaction processing furnace that introduces a reactive gas and generates ceramic material on a mold material at high temperature, there is a chamber with a cooling capacity through which cold water is passed through the double outer wall, and a fixed member is installed in the chamber. a reaction chamber fixedly installed through the reaction chamber; a partition wall provided adjacent to the outer wall surface of the reaction chamber; a heating chamber provided between the partition wall and the chamber; A fixedly installed heating element, an inert gas introduction pipe that introduces an inert gas whose gas pressure is adjusted by a gas pressure regulator from the outside of the chamber into the heating chamber, and a reactant gas that introduces the reaction gas from the outside of the chamber into the reaction chamber. A high-temperature reactor for manufacturing ceramic materials, characterized in that it is equipped with a reaction gas introduction pipe.
JP17019288A 1988-07-08 1988-07-08 Ceramic material manufacturing method and high temperature reactor for its manufacturing Pending JPH0222473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17019288A JPH0222473A (en) 1988-07-08 1988-07-08 Ceramic material manufacturing method and high temperature reactor for its manufacturing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17019288A JPH0222473A (en) 1988-07-08 1988-07-08 Ceramic material manufacturing method and high temperature reactor for its manufacturing

Publications (1)

Publication Number Publication Date
JPH0222473A true JPH0222473A (en) 1990-01-25

Family

ID=15900382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17019288A Pending JPH0222473A (en) 1988-07-08 1988-07-08 Ceramic material manufacturing method and high temperature reactor for its manufacturing

Country Status (1)

Country Link
JP (1) JPH0222473A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06199513A (en) * 1992-07-31 1994-07-19 Cvd Inc Method for production of silicon carbide having high polishing ability and high heat conductivity and use thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06199513A (en) * 1992-07-31 1994-07-19 Cvd Inc Method for production of silicon carbide having high polishing ability and high heat conductivity and use thereof

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