JPH0222629A - Optical shutter - Google Patents
Optical shutterInfo
- Publication number
- JPH0222629A JPH0222629A JP17083988A JP17083988A JPH0222629A JP H0222629 A JPH0222629 A JP H0222629A JP 17083988 A JP17083988 A JP 17083988A JP 17083988 A JP17083988 A JP 17083988A JP H0222629 A JPH0222629 A JP H0222629A
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- layer
- transparent conductive
- crystalline low
- shutter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 9
- 239000010410 layer Substances 0.000 claims abstract description 39
- 238000002844 melting Methods 0.000 claims abstract description 29
- 230000008018 melting Effects 0.000 claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 14
- 239000011241 protective layer Substances 0.000 claims abstract description 12
- 239000002985 plastic film Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229920006255 plastic film Polymers 0.000 claims abstract description 7
- 239000000126 substance Substances 0.000 claims description 16
- 238000002834 transmittance Methods 0.000 abstract description 17
- 239000000463 material Substances 0.000 abstract description 14
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 5
- 210000004027 cell Anatomy 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- -1 polyethylene Polymers 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- CBFCDTFDPHXCNY-UHFFFAOYSA-N icosane Chemical compound CCCCCCCCCCCCCCCCCCCC CBFCDTFDPHXCNY-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000004645 polyester resin Substances 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229920001342 Bakelite® Polymers 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 229920003232 aliphatic polyester Polymers 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000909 polytetrahydrofuran Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 239000012261 resinous substance Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
Landscapes
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、遮光用光シヤツターに関する。さらに詳しく
は建築物や自動車、船、航空機等の窓及び仕切りに用い
られる、各種窓などの光シヤツターに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a light shutter for shielding light. More specifically, the present invention relates to light shutters for various windows and the like used in windows and partitions of buildings, automobiles, ships, aircraft, etc.
大型の窓用光シヤツターとしては、機能層を、導電層を
有した透明ガラス又はプラスチックフイ（１） 電場
を用いたシャッター
１）ＴＮ液晶を樹脂の中に混合しエマルジぢン化したも
のを透明導電層を有したガラス又はプラスチックフィル
ム上に塗布し、さらに同様な透明導電材にてはさんだも
ので、電場による液晶の配向により、光線透過率を変化
させるものである。For large window optical shutters, the functional layer is transparent glass or plastic film with a conductive layer (1) Shutter using electric field It is coated on a glass or plastic film with a conductive layer and sandwiched between similar transparent conductive materials, and the light transmittance is changed by aligning the liquid crystal using an electric field.
ｉｉ）普通の液晶セルと同様に、ＴＮ液晶をガラス又は
プラスチックフィルム電極の間に封止し、電極の外側両
面に偏光板を配置する。電場によりセルの偏光性を変え
ることにより、透明又は不透明になる。ii) Similar to a common liquid crystal cell, the TN liquid crystal is sealed between glass or plastic film electrodes, and polarizers are placed on both outer sides of the electrodes. By changing the polarization of the cell using an electric field, it becomes transparent or opaque.
１ｉｉ）酸化タングステンなどのエレクトロクロミック
物質を用いたもので、電場による酸化還元反応により、
いろいろな色に着色し、選択透過性や透過率の変化を与
えるものである。1ii) It uses an electrochromic substance such as tungsten oxide, and by redox reaction caused by an electric field,
It is colored in various colors to change selective permeability and transmittance.
ｉｖ）透明強誘電体板（ＰＬＺＴなど）に透明電極を形
成し、両側に偏光板を配置したもの、電場により強誘体
の複屈折率を変え、偏光板を通過する光量をコントロー
ルする。iv) A transparent electrode is formed on a transparent ferroelectric plate (such as PLZT), and polarizing plates are placed on both sides, and the birefringence of the ferroelectric material is changed by an electric field to control the amount of light passing through the polarizing plate.
（２） フォトクロミンク物質を用いたもの固体のフ
ォトクロミンク物質を透明なバインダーで固めるか透明
な物質ではさんだものであり、暗所では透明であり、明
るいところでは着色する。(2) Items using photochromink substances Solid photochromink substances are hardened with a transparent binder or sandwiched between transparent materials, and are transparent in the dark and colored in the light.
したがって光線透過率を自由にコントロールすることは
できない。Therefore, the light transmittance cannot be freely controlled.
現在までに提案されている大型光シヤツターの機構は前
述のごとく複雑であり、製法も複製で長く、高度の技術
を要する。したがって大型の光シャフター素子を低価格
で作製することはかなりの困難が予想される。As mentioned above, the mechanisms of large optical shutters that have been proposed to date are complex, and the manufacturing process is lengthy and requires advanced technology. Therefore, it is expected that it will be quite difficult to manufacture a large optical shuffler element at a low cost.
まず、ＴＮ液晶を用いたセル方式のシャッターでは大型
のセルを作ることは配向膜の均一性とか、セルギャップ
の問題、液晶の注入等考えると、大きな面積は困難であ
る。First, in a cell-type shutter using TN liquid crystal, it is difficult to make a large cell in consideration of issues such as the uniformity of the alignment film, the cell gap, and the injection of liquid crystal.
又エレクトロクロミックでは、エレクトロクロミンク物
質を大面積電極に均一に形成するためには、高度の技術
と多くの工程を必要とし、大きなコストを要する。一方
液晶のエマルシヨンを用いる光シヤツターは、比較的容
易に大面積シャッターができるが、液晶カプセルのまわ
りに誘電体が介在するため、液晶に数ボルトの電圧をか
けるためには、両側の電極に、ｔｏｏｖ前後の電圧をか
ける必要があり、非常に危険であると共に、使用場所が
制限される。Furthermore, in electrochromic technology, in order to uniformly form an electrochromic substance on a large-area electrode, advanced technology and many steps are required, resulting in large costs. On the other hand, optical shutters using liquid crystal emulsions can produce large-area shutters relatively easily, but because a dielectric material is interposed around the liquid crystal capsule, in order to apply a voltage of several volts to the liquid crystal, it is necessary to apply a voltage of several volts to the electrodes on both sides. It is necessary to apply a voltage of around 100 volts, which is very dangerous and limits the places where it can be used.
又、フォトクロミック物質を使ったシャッターは、まわ
りの光に左右され、自由に透過率をコントロールできな
いという欠点がある。Furthermore, shutters using photochromic substances have the disadvantage that they are affected by surrounding light and cannot freely control transmittance.
本発明は、以上の問題点を解決しようとするものであり
、低コストで大面積シャッターを容易に作製することが
でき動作電圧も低く、光線透過率を自由にコントロール
することができる、大型光シヤツターを提供しようとす
るものである。The present invention is an attempt to solve the above problems, and is a large-sized shutter that can easily produce a large-area shutter at low cost, has a low operating voltage, and can freely control light transmittance. The aim is to provide a shutter.
本発明は、結晶性低融点物質層を、ガラス又はフィルム
を基板とした透明導電層上に形成し、少なくとも該結晶
性低融点樹脂層側に保護層を設けた光シヤツターである
。The present invention is an optical shutter in which a crystalline low melting point material layer is formed on a transparent conductive layer using glass or a film as a substrate, and a protective layer is provided at least on the side of the crystalline low melting point resin layer.
本発明の構成は結晶性低融点物質層と、これに接してい
る透明導電性基板と、これらの両面又は片面を保護する
保護層からなっており、透明導電層の両端には電流を流
すためのリード電極が形成されている。The structure of the present invention consists of a crystalline low-melting point material layer, a transparent conductive substrate in contact with this layer, and a protective layer that protects both or one side of these layers. lead electrodes are formed.
本発明の動作は透明導電層に電流を流し発熱させ、結晶
性低融点物質層を融点近（まで加熱し、透明な状態とし
、それ以降は、結晶性低融点物質が融点を保つ程度の電
流を流し透明な状態を保つ。The operation of the present invention is to apply an electric current to the transparent conductive layer to generate heat, heat the crystalline low melting point substance layer to near its melting point and make it transparent, and after that, the current is applied to the extent that the crystalline low melting point substance maintains its melting point. to maintain a clear state.
次に透過率を減少させるには電流を切り、冷却すればよ
い、なお中間の透過率を得るためには、結晶性低融点物
質の中に温度センサーを設けその温度を精度よくコント
ロールすればよい０本発明に用いられる結晶性低融点物
質は分子量が１００から１０万で融点が３０〜８０°Ｃ
が好ましい、又固体は不透明で白色又は着色されており
融点以上では透明で、化学的に安定であり変色等を生じ
ないことが必要である０例えば高分子では、脂肪族ポリ
エステル樹脂、ポリエチレングリコール、ポリオキサシ
クロブタン、ポリテトラヒドロフランなどのポリエーテ
ル、低分子ポリエチレンなどがある。又低分子物質では
、エイコサン、２−メチル−２４ペンタデイオール１．
６−ヘキサンデイオール、ラウリル酸などがある。これ
らは、類似化合物と混合して用いてもよく、又、透明な
バインダーと混合してもよい。Next, to reduce the transmittance, simply turn off the current and cool it. To obtain an intermediate transmittance, it is necessary to install a temperature sensor inside the crystalline low-melting point material and control its temperature with precision. 0 The crystalline low melting point substance used in the present invention has a molecular weight of 100 to 100,000 and a melting point of 30 to 80°C.
The solid is preferably opaque, white or colored, and must be transparent above the melting point, chemically stable, and free from discoloration. For example, for polymers, aliphatic polyester resin, polyethylene glycol, Examples include polyoxacyclobutane, polyethers such as polytetrahydrofuran, and low-molecular polyethylene. Low molecular weight substances include eicosane, 2-methyl-24pentadiol 1.
Examples include 6-hexanediol and lauric acid. These may be used by mixing with similar compounds, or may be mixed with a transparent binder.
樹脂状物質を用いてシャッターを加工する場合は、あら
かじめシート状にしておき、透明導電層及び保護層とは
り合せればよいという取扱いやすさがある。低分子物の
場合には、適当な溶媒に溶かし、透明導電層上に塗布し
なければならない。When processing a shutter using a resinous substance, it is easy to handle because it can be made into a sheet in advance and then bonded to a transparent conductive layer and a protective layer. In the case of low-molecular substances, they must be dissolved in a suitable solvent and applied onto the transparent conductive layer.
次に結晶性低融点物質の厚さは２５μｍから５００＃ｍ
が適当である。あまり薄い場合は、融解した場合、透明
導電層や保護層の変形によりかたより易く、あまり厚い
場合には樹脂を融解させるために多くのエネルギーを要
するので好ましくない。Next, the thickness of the crystalline low melting point material is from 25μm to 500#m
is appropriate. If it is too thin, the transparent conductive layer or protective layer will be easily deformed when melted, and if it is too thick, it will require a lot of energy to melt the resin, which is not preferable.
本発明に用いられる透明導電層は、透明導電性であり、
８０℃の温度に耐える物質であればよく、ＩＴＯ，Ｓｎ
ｏｗ 、ＺｎＯなどの酸化物、Ａｇ。The transparent conductive layer used in the present invention is transparent conductive,
Any material that can withstand a temperature of 80°C may be used, such as ITO, Sn
ow, oxides such as ZnO, Ag.
Ａｕなどの金属でもい、基板物質はガラス、又は透明プ
ラスチックが用いられる０例えばポリエステルフィルム
、ポリエーテルサルフオンフィルムなどである。Even if metal such as Au is used, the substrate material may be glass or transparent plastic, such as polyester film, polyether sulfonate film, etc.
なお、透明導電層としては、この他、ガラスやプラスチ
ックに細い抵抗線を埋め込んだ素材を用いることもでき
る。In addition, as the transparent conductive layer, a material in which thin resistance wires are embedded in glass or plastic can also be used.
次に透明導電層の抵抗値は５Ω／口から５００Ω／口が
よくさらに好ましくは１０Ω／口から１００Ω／口が適
している。抵抗値が小さければ一定の出力を得るのに低
電圧でよく好ましい、またあまり小さな場合は、一般に
光線透過率が低下し酸化物の場合は導電膜が厚くなり割
れ易くなる０以上述べた抵抗値はシャッターの特性によ
っても制限を受ける０例えば、結晶性低融点物質が融解
するための熱ＩＱは
Ｑ−１”Ｒ−し
ただし
Ｒ：透明導電層の抵抗
■＝透明導電層に流れる電流
Ｌ：伝導及び放射により失なわれる熱量で表わされるが
、実際には時間の積分となりＱ−ｆｔＱｄ ｔ−ｆｔ（
１”−Ｒ−Ｌ）ｄ ｔとなり、レスポンス時間の設定に
より、抵抗値が決められる場合がある。Next, the resistance value of the transparent conductive layer is preferably from 5Ω/hole to 500Ω/hole, and more preferably from 10Ω/hole to 100Ω/hole. If the resistance value is small, it is preferable to use low voltage to obtain a constant output, and if it is too small, the light transmittance will generally decrease, and in the case of oxides, the conductive film will become thicker and more likely to break. is also limited by the characteristics of the shutter 0 For example, the thermal IQ for melting a crystalline low melting point substance is Q-1''R- However, R: Resistance of the transparent conductive layer ■ = Current L flowing through the transparent conductive layer: It is expressed as the amount of heat lost through conduction and radiation, but in reality it is an integral of time, Q-ftQd t-ft(
1''-R-L)dt, and the resistance value may be determined by setting the response time.
次に透明導電膜を形成する基板であるが、透明なガラス
又はプラスチックフィルム、プラスチックシートであれ
ばよい０例えばプラスチックではポリエーテルサルフォ
ン、ポリエステルからなるフィルム又はシートがある。Next, regarding the substrate on which the transparent conductive film is formed, it may be any transparent glass, plastic film, or plastic sheet. For example, as a plastic, there are films or sheets made of polyether sulfone or polyester.
フィルムの場合は軽くフレキシブルである点ガラスより
優れている。Film is superior to point glass, which is lighter and more flexible.
次に保護層であるが、結晶性低融点物質は融解した場合
は、軟化するため形を保つために保護層が必要である。Next, regarding the protective layer, when a crystalline low melting point substance is melted, it softens, so a protective layer is necessary to maintain its shape.
保護層は、ガラス板でもプラスチックフィルム又はシー
トでもよい、又、透明導電層側も必要に応じて保護して
もよい、つまり寒冷地で使用する場合の保温とか透明導
電層の基板がガラスの場合は割れ易いため、破損防止の
ため保護層を用いる場合もある。The protective layer may be a glass plate or a plastic film or sheet, and the transparent conductive layer side may also be protected as necessary, i.e. for heat retention when used in cold regions, or when the substrate of the transparent conductive layer is glass. Because it is easily broken, a protective layer is sometimes used to prevent damage.
なお、この保護層に透明導電性フィルムを用いれば、結
晶性低融点物質を両側から透明導電膜でサンドイッチす
る事になり加熱速度を上げることができる。Note that if a transparent conductive film is used for this protective layer, the crystalline low-melting point substance is sandwiched between the transparent conductive films from both sides, and the heating rate can be increased.
結晶性低融点物質層を透明導電層上に形成しその片面又
は両面に保ｉｉを設けることにより廉価な大面積シャッ
ターを提供することができる。By forming a crystalline low melting point material layer on a transparent conductive layer and providing insulation ii on one or both sides of the layer, an inexpensive large area shutter can be provided.
（１）メチレン基とエステル基の単一ユニットの繰返し
構造を存した、融点が５０℃のポリエステル樹脂を、抵
抗値が３００Ω／口の透明導性フィルム上に、５０μｍ
ｔＸ２００ｍＸ３００ｍの寸法で形成し、その上から１
閣ものガラスを融着させた。電極は３０〇−長の両辺に
シルバーペイントを塗布し形成した。このシャッターの
初期の平行光線透過率は２５％（ａｔ５５０ｎｍ）であ
った０次にこのシャッターに４０ＶＡＣを印加し１．５
Ａの電流を流し１分経過したところ全体の結晶が融解し
、平行光線透過率が増加し、８６％に達した０次に印加
電圧を切り室温（２５°Ｃ）にて３分待ったところ、中
の樹脂層が結晶化し、シャッターは不透明になり平行光
線透過率は、３０％まで低下した。この様な操作を１０
回くり返したが、シャッターには異常はみられなかった
。(1) A polyester resin with a repeating structure of a single unit of methylene groups and ester groups and a melting point of 50°C is coated on a transparent conductive film with a resistance value of 300Ω/hole to a thickness of 50 μm.
It is formed with dimensions of tX200mX300m, and 1
The cabinet glass was fused together. The electrodes were formed by applying silver paint to both sides of the 300 mm length. The initial parallel light transmittance of this shutter was 25% (at 550 nm).Then, 40VAC was applied to this shutter and the transmittance was 1.5%.
When a current of A was applied for 1 minute, the entire crystal melted and the parallel light transmittance increased, reaching 86%.When the applied voltage was turned off at the 0th order and waited for 3 minutes at room temperature (25°C), The resin layer inside crystallized, the shutter became opaque, and the parallel light transmittance decreased to 30%. 10 operations like this
After repeated testing, no abnormality was found with the shutter.
（２）１００μｍ厚のポリエチレンテレフタレートフィ
ルム上にＩＴＯをスパツクした透明導電層上に、分子量
約５０００、融点約５０°Ｃのポリエチレングリコール
を約７０℃に保ち、グラビアコーターにて、約３０μの
厚さに塗布した６次にこの上から１００μのポリエチレ
ンテレフタレートフィルムにてカバーし、エツジをポリ
イミドテープにてシールすることにより３００Ｘ３００
ｍのシャッターを得た。このシャッターの透明電極の両
端に４０ ＶＡＣを印加し、２Ａを澁すことにより１分
後シャッターは透明になった。次に電流を切り、２分後
には、不透明になりはじめ、４分で完全にスリガラ状に
なった。このときの平行光線透過率は４０％であった。(2) Polyethylene glycol with a molecular weight of about 5000 and a melting point of about 50°C is kept at about 70°C on a transparent conductive layer made by sprinkling ITO on a 100 μm thick polyethylene terephthalate film, and coated with a gravure coater to a thickness of about 30 μm. Next, cover with a 100μ polyethylene terephthalate film and seal the edges with polyimide tape to create a 300X300
m shutters were obtained. By applying 40 VAC to both ends of the transparent electrodes of this shutter and 2 A, the shutter became transparent after 1 minute. Next, the current was turned off, and after 2 minutes it began to become opaque, and after 4 minutes it had become completely frosty. The parallel light transmittance at this time was 40%.
この様な操作は、くり返し性があることが確認され、大
型光シヤツターとして十分に使用できるものであった。It was confirmed that such operations were repeatable and could be used satisfactorily as a large optical shutter.
以上のように本発明の光シヤツターは容易に大面積のも
のを作製することができ、動作電圧が低く、光線透過率
を自由にコントロールすることがものである。As described above, the light shutter of the present invention can be easily manufactured in a large area, has a low operating voltage, and can freely control light transmittance.
第１図は、結晶低融点物質を用いた光シヤツターの断面
図を示す。
特許出願人 住友ベークライト株式会社特許出願大
阪田産業株式会社FIG. 1 shows a cross-sectional view of a light shutter using a crystalline low-melting point substance. Patent Applicant Sumitomo Bakelite Co., Ltd. Patent Applicant Sakata Sangyo Co., Ltd.
Claims (1)
ィルムを基板とした透明導電層上に形成し、少なくとも
該結晶性低融点物質層側に保護層を設けることを特徴と
する光シャッター。(1) An optical shutter characterized in that a crystalline low melting point substance layer is formed on a transparent conductive layer using a glass or plastic film as a substrate, and a protective layer is provided at least on the crystalline low melting point substance layer side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17083988A JPH0222629A (en) | 1988-07-11 | 1988-07-11 | Optical shutter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17083988A JPH0222629A (en) | 1988-07-11 | 1988-07-11 | Optical shutter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0222629A true JPH0222629A (en) | 1990-01-25 |
Family
ID=15912286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17083988A Pending JPH0222629A (en) | 1988-07-11 | 1988-07-11 | Optical shutter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0222629A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61277372A (en) * | 1985-05-31 | 1986-12-08 | Toshiba Corp | Power supply device |
| JP2017520018A (en) * | 2014-06-05 | 2017-07-20 | マイクロソフト テクノロジー ライセンシング，エルエルシー | See-through dimming panel |
-
1988
- 1988-07-11 JP JP17083988A patent/JPH0222629A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61277372A (en) * | 1985-05-31 | 1986-12-08 | Toshiba Corp | Power supply device |
| JP2017520018A (en) * | 2014-06-05 | 2017-07-20 | マイクロソフト テクノロジー ライセンシング，エルエルシー | See-through dimming panel |
| US10670937B2 (en) | 2014-06-05 | 2020-06-02 | Microsoft Technology Licensing, Llc | See-through dimming panel |
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