JPH0222986Y2 - - Google Patents

Description

[Detailed Description of the Invention] Industrial Application Field The present invention relates to a target chamber that can be used when introducing impurities into a semiconductor wafer by ion implantation.

Conventional configuration and its problems In order to perform high-density ion implantation with an ion implantation device, it is necessary to increase the amount of ion current. However, when the amount of current is increased, the temperature of the semiconductor substrate into which ions are implanted increases in proportion to the current. It is necessary to cool this substrate and efficiently and uniformly implant ions into many substrates. Generally, a method is used in which the back side of the substrate is cooled by bringing it into close contact with a cooling medium, or a method is used in which a large number of substrates are rotated within a chamber to lower the temperature generated within the substrate while being injected. However, both of these methods have problems in that, due to the mechanism of the chamber, there is a limit to the efficiency of heat exchange with the cooling medium, and on the other hand, there is a limit to the installation of a large number of wafers due to the size of the chamber. .

Purpose of the Invention As a means to solve these problems, the present invention provides a target chamber that achieves the objectives with a simple configuration.

Structure of the invention The present invention has a substrate holder that can arrange and hold a large number of semiconductor substrates on a flat plate surface, and a plurality of targets having through holes in a part of the flat plate in the direction of the rotation axis, and each can be freely rotated. This is a target chamber, which allows a flexible ion implantation process to be performed on a large number of semiconductor substrates with a single chamber operation.

DESCRIPTION OF THE EMBODIMENTS FIG. 1 shows a block diagram of an ion implantation apparatus equipped with a target chamber according to the present invention.

In FIG. 1, 1 is an ion source, 2 is an analyzer for selecting ion species, 3 is a mechanism for accelerating the selected ions, 4 is a lens mechanism for focusing the accelerated ions, and further includes: This device consists of a target chamber 5 and a holder 6 that supports a semiconductor substrate 7 when the ion beam 8 is irradiated onto the semiconductor substrate 7, and these constitute an ion implantation device.

In FIG. 1, the wafer holder 6 is composed of a disk that allows a large number of wafers to be placed therein, and furthermore, this disk allows a large number of wafers to be placed in concentric circles. That is, it has a superimposed mechanism, allowing each holder to rotate independently. By installing a large number of holders inside the target chamber and stacking them one on top of the other, ions can be implanted into as many wafers as the number of holders increases in a single evacuation configuration.

The wafer holder has a structure in which each plate can be removed, making it easy to install.

Figures 2A and 2B show the basic configuration of the wafer holder. Figure 2A shows each flat plate 1 in the holder.
The figure shows a state in which ions are being implanted into wafers 10 placed at wafers 1, 12, 13, 14, and 15.
FIG. 2B shows a state in which ions are being implanted into the wafer 20 placed on the flat plate 12 in the holder through the through hole 9 provided in the flat plate 11 in front.

In this way, each flat plate 11 in each wafer holder
-15 requires a structure having only one hole larger than the wafer size, and the ion beam passing through this hole can be used to implant ions into the wafer of the next wafer holder. In addition,
Even if several plates are stacked one on top of the other and have holes through which ions from the wafer holder pass, at this distance, the ion energy in a high electric field is not affected at all, and the required impurity concentration is implanted into the semiconductor wafer. be able to.

Figures 3A and 3B show cross-sectional views of the wafer holder configuration during an ion implantation operation. FIG. 3A shows how ions that have passed through one stationary flat plate in the holder are implanted into a semiconductor substrate on the next flat plate in the holder. In FIG. 3B, three stationary flat plates 11, 12,
It shows how ions that have passed through each of the semiconductor substrates 13 and 13 are implanted into the semiconductor substrate 40 on the fourth flat plate in the holder. If the mechanism has a large number of flat plates for holding semiconductor substrates as shown in these examples, it is possible to implant ions into a large number of wafers with a single evacuation configuration.

Effects of the invention According to the invention, ions can be implanted into a large number of substrates by one evacuation.

Furthermore, in the case of high-density injection, by adjusting the rotation period of each flat plate in the holder, it is possible to operate without increasing the temperature of the substrate. Note that the operating mechanism for each flat plate of the holder can be easily provided separately in the chamber.

In addition, mounting the semiconductor substrate into the holder is easy, and compared to the ion implantation equipment commonly used today, the present invention is an equipment that can process a large number of wafers when performing high-density ion implantation. .

[Brief explanation of the drawing]

FIG. 1 is a target chamber of an ion implantation apparatus showing the configuration of the present invention, and FIGS. 2A and 3B and 3A and 3B are perspective views of an embodiment of a wafer holder and cross-sectional views showing its operation status. . 1... Ion source, 2... Analysis mechanism, 3... Acceleration mechanism, 4... Lens mechanism, 5... Target chamber, 6... Wafer holder, 7, 10, 20,
30, 40...Semiconductor substrate, 9...Through hole, 11~
15...Each flat plate in the holder.

Claims (1)

[Scope of utility model registration request] A target chamber comprising a substrate holding part capable of arranging and holding a large number of semiconductor substrates on a flat plate surface, and a plurality of targets each having a through hole in a part of the flat plate in the direction of a rotation axis, each of which can be freely controlled in rotation.