JPH02230221A - optical bias shifter - Google Patents
optical bias shifterInfo
- Publication number
- JPH02230221A JPH02230221A JP4982189A JP4982189A JPH02230221A JP H02230221 A JPH02230221 A JP H02230221A JP 4982189 A JP4982189 A JP 4982189A JP 4982189 A JP4982189 A JP 4982189A JP H02230221 A JPH02230221 A JP H02230221A
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- JP
- Japan
- Prior art keywords
- optical
- light
- signal
- output
- input
- Prior art date
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Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は,光機能素子に係り、特に信号成分中の低い信
号光レベルをより低くし信号のS/Nを高める光バイア
スシフターに関する.
〔従来の技術〕
光通信では、光の強度を変えてON,OFFの信号をの
せる強度変調方式や光のコヒーレンシーを利用して光の
周波数や位相にON,OFFの信号をのせるコヒーレン
ト光通信として周波数変調,位相変調方式がとられてい
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical functional device, and particularly to an optical bias shifter that lowers a low signal light level in a signal component and increases the signal-to-noise ratio of the signal. [Prior technology] In optical communication, there are intensity modulation methods that add ON and OFF signals by changing the intensity of light, and coherent light that uses optical coherency to add ON and OFF signals to the frequency and phase of light. Frequency modulation and phase modulation methods are used for communication.
強度変調では信号光源に半導体レーザを用いて、その入
力電流に信号電流をのせることで、その半導体レーザの
出力光の強度を変調する.強度変調されたレーザ光が光
ファイバを伝送し,直接受光器で電気信号に復元される
.
半導体レーザの光強度の変調速度を高めるためには、半
導体レーザの容量と抵抗を下げること及び半導体レーザ
に注入されたキャリア(電子,正孔)と励起光子の増幅
,減衰過程のキャリャ密度変動への追従時間ずれに起因
する緩和振動周波数を高める必要がある.前者は構造を
変えることにより改善されている。後者については、次
のような特徴がある.
緩和振動周波数frは光出力Paの2乗根に比例する.
このため大きな光出力では!.は高くとれる.しかし,
強度変調のS/Nを良くするためには,光の強度のON
とOFF時の明確さをつけるため、光出力はほぼ零とな
る発振閾電流値付近から信号電流を入力して変調する必
要があった.現在は、この閾値近傍にバイアス点を設定
して利用している.
光の周波数や位相に信号を乗せるコヒーレント光通信で
は、周波数や位相に信号を持ち、光ファイバを伝送した
信号光に対し,受信系に用意した直流光を干渉させる.
このとき,信号光の電界Esと直流光の電界E−の積の
形2EsE一で周波数又は位相信号成分が強度変化とし
て現われ,これを受光器で電気信号に変換する.従って
直流光の電界強度E−が大きい程信号成分の強度変換が
大きくなり、S/Nが上記の強度変調方式よりも改善さ
れる利点がある.
また、光増幅器を用いた光中継器では.信号光を電気信
号に直す必要がないため,構成が非常に簡単になる.
〔発明が解決しようとする課題〕
ところが、より高速に変調あるいはS/Nを高めようと
するとき次のような問題があった.強度変調方式では、
従来直流光出力を低くする素子又は方式がなく、結局、
閾値電流近傍の低光出力にバイアスし、ここから変調を
加えていた.このため,高出力域の高い緩和振動周波数
が,低い出力域の低い緩和振動周波数により制限を受け
、変調速度をあまり高めることはできなかった.また、
コヒーレント光通信系では,干渉信号出力を大きくする
ために,直流干渉光の電界E−を大きくすると、この直
流光自身の強度IE−1”が大きくなり,受光系のアン
プのダイナミックレンジが劣化し、S/N改善が劣ると
いう問題があった.
また,光増幅器を用いた光中継器では,信号光が入らな
いとき,光増幅器自体が発する自然放出光が雑音源とな
りS/Nを低めていた.〔課題を解決するための手段〕
強度変調方式で高い緩和振動域のみを利用し、かつ信号
出力光の高低のパワー比を得るためには、低い信号出力
時の光出力バイアス点を半導体レーザの高い出力点に設
定し、高い信号出力点をさらに高い出力点に設定すれば
よい.そして,この出力信号に対し、低い信号出力のバ
イアス分を減少させ、高低信号出力差と低い信号出力す
なわち直流バイアス光出力の比を大きくシ,デューテイ
ー比を大きくすれば良い.
又,コヒーレント光通信においても同様に、直流光光強
度分の出力を低下させ、干渉出力分と直流強度分の出力
比すなわちデューテイー比を大きくすれば良い.
上記のことは、強度変調方式の場合は変調光出力に対し
,コヒーレント光通信では信号光,直流光の干渉を行う
光学系に,低い光出力レベル時は吸収領域、高い光カレ
ベルでは吸収飽和域となるように設定した町飽和吸収体
を挿入することによリ達成される。In intensity modulation, a semiconductor laser is used as a signal light source, and by adding a signal current to its input current, the intensity of the output light of the semiconductor laser is modulated. Intensity-modulated laser light is transmitted through an optical fiber and directly restored to an electrical signal by a receiver. In order to increase the modulation speed of the light intensity of a semiconductor laser, it is necessary to lower the capacitance and resistance of the semiconductor laser, and to reduce the carrier density fluctuation in the amplification and attenuation process of carriers (electrons, holes) injected into the semiconductor laser and excitation photons. It is necessary to increase the relaxation oscillation frequency caused by the tracking time lag. The former is improved by changing the structure. The latter has the following characteristics. The relaxation oscillation frequency fr is proportional to the square root of the optical output Pa.
Because of this large light output! .. can be expensive. but,
In order to improve the S/N of intensity modulation, it is necessary to turn on the light intensity.
In order to make the OFF state clearer, it was necessary to input and modulate the signal current from around the oscillation threshold current value, where the optical output is almost zero. Currently, a bias point is set near this threshold and used. In coherent optical communication, a signal is placed on the frequency and phase of light, and the signal light transmitted through an optical fiber is interfered with the DC light provided in the receiving system.
At this time, a frequency or phase signal component appears as an intensity change in the form 2EsE-, which is the product of the electric field Es of the signal light and the electric field E- of the DC light, and this is converted into an electric signal by the optical receiver. Therefore, the greater the electric field strength E- of the DC light is, the greater the intensity conversion of the signal component becomes, and there is an advantage that the S/N ratio is improved over the above-mentioned intensity modulation method. In addition, optical repeaters using optical amplifiers. Since there is no need to convert the signal light into an electrical signal, the configuration is extremely simple. [Problems to be solved by the invention] However, when attempting to modulate at a higher speed or increase the S/N ratio, the following problems occurred. In the intensity modulation method,
Conventionally, there was no element or method for lowering the DC light output, and in the end,
A bias was applied to the low optical output near the threshold current, and modulation was applied from there. For this reason, the high relaxation oscillation frequency in the high power range was limited by the low relaxation oscillation frequency in the low power range, and the modulation speed could not be increased much. Also,
In a coherent optical communication system, when the electric field E- of the DC interference light is increased in order to increase the output of the interference signal, the intensity IE-1" of this DC light itself increases, and the dynamic range of the amplifier in the light receiving system deteriorates. In addition, in optical repeaters using optical amplifiers, when no signal light enters, the spontaneous emission light emitted by the optical amplifier itself becomes a noise source and lowers the S/N. [Means for solving the problem] In order to use only the high relaxation oscillation range with the intensity modulation method and obtain a high-to-low power ratio of the signal output light, the optical output bias point at low signal output should be set to a semiconductor. Just set the laser to a high output point, and set the high signal output point to an even higher output point.Then, with respect to this output signal, reduce the bias of the low signal output, and reduce the difference between high and low signal outputs and the low signal output. In other words, it is sufficient to increase the ratio of the DC bias light output and the duty ratio.Also, in coherent optical communication, similarly, the output of the DC light intensity is reduced, and the output ratio of the interference output and the DC intensity is reduced. In other words, the duty ratio can be increased.The above means that in the case of intensity modulation method, the modulated optical output is This is achieved by inserting a saturated absorber that is set to have an absorption saturation region at high optical power levels.
光中継器では,光増幅器の自然放出光の成分を下げるこ
とにより,信号のS/Nが改善される.〔作用〕
第1図は可飽和吸収体を用いたときのその可飽和吸収体
への入力光と出力光の関係を示す.以下その動作原理を
説明する.
可飽和吸収体では弱い光入力に対しては,充分吸収因子
が作用するため吸収係数が大きく,出力光はほとんどな
い.しかし,光入力が大きくなると吸収因子が不足する
ため、光の吸収係数が下がり、出力光が現われる.これ
が吸収飽和の現われであり,光入力を強めれば強めるほ
ど出力光強度は図のスーパーリニアな曲線1−1のよう
に増加する.さて,直流バイパス光強度11を有するO
N−OFFの信号光2をこの可飽和吸収体に入力すると
、低い信号レベル11は大きく吸収を受け,光出力強度
12は小さくなる.これに対し,高い信号レベルでは、
吸収が減少し、出力光レベルは高い状態が保たれ全体と
しての出力光3を得る.入力光の信号変調分13と直流
バイアス光分11の比率に対し,出力光3の信号変調分
14と直流バイアス光分12の比率は改善される.この
とき,変調分の入力光と出力光の比率は,高いレベルの
吸収係数が小さいため、直流分の吸収減衰に比べ格段に
大きい.
〔実施例〕
第1図と第2図により実施例1を説明する.第2図は本
発明の実施例の光通信システムの模式的構成図である.
信号電流発生器31からの電流信号を直流バイアスに付
加して,半導体レーザ32の光出力を強度変調し、光フ
ァイバ34を伝送させた後に受光器35で電気信号に復
元し,増幅器36で電気信号出力を増幅する.本実施例
はこのような強度変調方式の光通信システムに,可飽和
吸収体33を挿入したシステムである.
この可飽和吸収体33は、1.57μmの発振波長を持
つファブリベロ型半導体レーザにSiOの無反射コーテ
ィング37を設けて作製したちのである.半導体レーザ
の発振波長は1.55μmであり、直流バイアスが加え
られた状態で信号発生源31からの信号が付加される.
可飽和吸収体33への注入電流をOとした条件下で半導
体レーザ32からの可飽和吸収体33への光入力と可飽
和吸収体33からの光出力の関係を示したものが第1図
である.
入力光信号2の直流バイアス分11は、可飽和吸収体の
入出力特性1−1の閾値よりわずかに低くなるように1
mWに設定してある.入力光の信号成分13は、入呂力
特性1−1の可飽和領域となる.信号成分として2mW
相当を加える.その結果,可飽和吸収体からの出力光信
号3の直流分12としては、50μW、信号成分は〜1
.1mWとなった.
入力光の直流成分が小さな信号2′が入射した場合、可
飽和吸収体33への注入電流を加えることにより.可飽
和吸収特性を曲ml−2のようにシフトさせることがで
きる.これにより、直流入力光の強度に、可飽和吸収点
を合せ、信号成分の劣化を防ぐことができる.ここで、
特性1−2は,注入電流値として.2mAを加えたとき
の可飽和吸収体33の入出光強度特性である.
さらに,第2図の構成において、半導体レーザ32に分
布帰還型半導体レーザを用いて光バイアスシフターをモ
ノリシックに接合し、光バイアスシフターの入力側の無
反射コーティングを省くことも容易である.
実施例2
第3図を用いて第2の実施例を説明する.第4図はコヒ
ーレント光通信システムの基本構成に本発明の光バイア
スシフタを導入したものである.信号電流発生器31か
らの電流信号を直流バイアスに付加して、半導体レーザ
32の光出力の周波数を変調する、この変調信号光を光
アイソレータ38aを通して,光ファイバ34で伝送し
、受信系の光カプラ39で光アイソレータ38bを通し
た局部発振用半導体レーザ40の直流出力光と干渉させ
る.干渉光は、局部発振光の直流強度の上に信号光との
千渉信号光分として、信号強度分が重畳される.この干
渉信号光をファブリペロレーザに無反射コーティング3
7を設した光バイアスシフターである可飽和吸収体33
に入射する,このときの光バイアスシフター33への人
出方光の特性を第4図に示す.干渉信号光4に対し、直
流分を可飽和吸収特性1−1の可飽和吸収点に設定する
.実施例1と同様に出方光5は直流分が圧縮される.
実施例3
第5図は,第3の実施例として、光中継器に本発明の光
バイアスシフターを用いた場合の光学系の構成を示す.
本実施例の構成は、光増幅器41と光フィルター42を
用いた光中継器に、波形整形用の光バイアスシフターと
しての可飽和吸収体33を挿入したものである.
光ファイバ34を伝搬した信号光は光増幅器41で信号
光強度が増幅される.光増幅器41は大量の自然放出光
も含むため、フィルター42で信号光とは無関係の波長
の自然放出光をカットする.さらに、光バイアスシフタ
である可飽和吸収体33を挿入することにより,フィル
ターを透過した光増幅器の自然放出光をもカットできる
.その動作を第6図に示す.光フィルター42からの出
力光の時間変化6では、低い信号レベル時に光増幅器の
自然放出光雑を含む.これを入出力光特性として曲線1
−2を持つ光バイアスシフター33に入射すると、その
出力波形7は,低いレベルの雑音分が吸収され、整形さ
れてS/Nが高まる.この光フィルター42と光バイア
スシフター33を入れ替えても良いし、また、光フィル
ターを省いて光バイアスシフターのみでも、光増幅器の
自然放出光の雑音成分をかなり抑えることができる.
〔発明の効果〕
本発明によれば、光強度の直流バイアス量を変えること
ができるので,直流成分の除去や低い信号レベルに含ま
れる雑音を抑えることができるので、光通信や光情報処
理系でのS/Nを高めることができる.In optical repeaters, the signal-to-noise ratio is improved by lowering the spontaneous emission component of the optical amplifier. [Operation] Figure 1 shows the relationship between the input light and the output light to the saturable absorber when a saturable absorber is used. The operating principle is explained below. In a saturable absorber, the absorption coefficient is large due to the sufficient absorption factor acting on weak optical input, and there is almost no output light. However, as the optical input increases, there is a shortage of absorption factors, so the absorption coefficient of light decreases and output light appears. This is a manifestation of absorption saturation, and the stronger the optical input, the more the output optical intensity increases as shown in the superlinear curve 1-1 in the figure. Now, O with DC bypass light intensity 11
When the N-OFF signal light 2 is input to this saturable absorber, the low signal level 11 is largely absorbed, and the optical output intensity 12 becomes small. On the other hand, at high signal levels,
Absorption is reduced and the output light level remains high to obtain an overall output light of 3. The ratio of the signal modulation component 14 of the output light 3 and the DC bias light component 12 is improved relative to the ratio of the signal modulation component 13 of the input light and the DC bias light component 11. At this time, the ratio of the modulated input light to the output light is much larger than the absorption attenuation of the DC component because the high-level absorption coefficient is small. [Example] Example 1 will be explained with reference to Figures 1 and 2. FIG. 2 is a schematic diagram of an optical communication system according to an embodiment of the present invention. The current signal from the signal current generator 31 is added to the DC bias to intensity-modulate the optical output of the semiconductor laser 32, and after transmitting it through the optical fiber 34, it is restored to an electrical signal by the optical receiver 35, and then converted into an electrical signal by the amplifier 36. Amplify the signal output. This embodiment is a system in which a saturable absorber 33 is inserted into such an intensity modulation type optical communication system. This saturable absorber 33 was fabricated by providing a non-reflection coating 37 of SiO on a Fabry-Bello type semiconductor laser having an oscillation wavelength of 1.57 μm. The oscillation wavelength of the semiconductor laser is 1.55 μm, and a signal from the signal generation source 31 is added with a DC bias applied.
Figure 1 shows the relationship between the optical input from the semiconductor laser 32 to the saturable absorber 33 and the optical output from the saturable absorber 33 under the condition that the current injected into the saturable absorber 33 is O. It is. The DC bias component 11 of the input optical signal 2 is set to 1 so that it is slightly lower than the threshold value of the input/output characteristic 1-1 of the saturable absorber.
It is set to mW. The signal component 13 of the input light is in the saturable region of the bathing force characteristic 1-1. 2mW as signal component
Add equivalent. As a result, the DC component 12 of the output optical signal 3 from the saturable absorber is 50 μW, and the signal component is ~1
.. It became 1mW. When a signal 2' with a small DC component of the input light is input, by adding an injection current to the saturable absorber 33. The saturable absorption characteristics can be shifted as shown in the curve ml-2. This makes it possible to match the saturable absorption point to the intensity of the DC input light and prevent signal component deterioration. here,
Characteristic 1-2 is the injection current value. This is the input and output light intensity characteristics of the saturable absorber 33 when 2 mA is applied. Furthermore, in the configuration shown in FIG. 2, it is easy to monolithically bond the optical bias shifter using a distributed feedback semiconductor laser for the semiconductor laser 32 and omit the anti-reflection coating on the input side of the optical bias shifter. Example 2 The second example will be explained using FIG. Figure 4 shows the basic configuration of a coherent optical communication system in which the optical bias shifter of the present invention is introduced. The current signal from the signal current generator 31 is added to the DC bias to modulate the frequency of the optical output of the semiconductor laser 32. This modulated signal light is transmitted via the optical fiber 34 through the optical isolator 38a, and is transmitted to the optical fiber 34 of the receiving system. The coupler 39 causes interference with the DC output light of the local oscillation semiconductor laser 40 that has passed through the optical isolator 38b. In the interference light, the signal intensity is superimposed on the direct current intensity of the locally oscillated light as a signal light component interfering with the signal light. This interference signal light is applied to the Fabry-Perot laser with anti-reflection coating 3.
A saturable absorber 33 which is an optical bias shifter provided with 7
Figure 4 shows the characteristics of the outgoing light incident on the optical bias shifter 33 at this time. For the interference signal light 4, set the DC component to the saturable absorption point of the saturable absorption characteristic 1-1. As in the first embodiment, the direct current component of the output light 5 is compressed. Embodiment 3 FIG. 5 shows, as a third embodiment, the configuration of an optical system when the optical bias shifter of the present invention is used in an optical repeater. The configuration of this embodiment is such that a saturable absorber 33 as an optical bias shifter for waveform shaping is inserted into an optical repeater using an optical amplifier 41 and an optical filter 42. The intensity of the signal light propagated through the optical fiber 34 is amplified by the optical amplifier 41. Since the optical amplifier 41 also contains a large amount of spontaneous emission light, the filter 42 cuts off the spontaneous emission light of wavelengths unrelated to the signal light. Furthermore, by inserting a saturable absorber 33, which is an optical bias shifter, it is also possible to cut out the spontaneous emission light of the optical amplifier that has passed through the filter. The operation is shown in Figure 6. The temporal change 6 of the output light from the optical filter 42 includes spontaneous emission light noise from the optical amplifier at low signal levels. Using this as the input/output optical characteristic, curve 1
-2, the output waveform 7 absorbs low-level noise and is shaped to increase the S/N. The optical filter 42 and the optical bias shifter 33 may be replaced, or the noise component of the spontaneous emission light of the optical amplifier can be considerably suppressed by omitting the optical filter and using only the optical bias shifter. [Effects of the Invention] According to the present invention, it is possible to change the amount of DC bias of light intensity, so it is possible to remove DC components and suppress noise included in low signal levels, which is useful for optical communication and optical information processing systems. The S/N ratio can be increased.
第1図は本発明の入出力光特性と信号光バイアスの設定
を表わした説明図,第2図,第3図は本発明の実施例の
光通信システムの基本構成を示す模式図、第4図はコヒ
ーレント光通信システムに実施した場合の入出力光の関
係を示す特性図、第5図は本発明を光中継器に実施した
場合の基本構成を示す模式図,第6図は本発明を光中継
器に実施した場合の入出力光の関係を示す特性図である
.1−1・・・バイアス電流が零のときの入出力光特性
,1−2・・・バイアス電流注入時の入出力特性、2・
・・バイアス電流が零のときの入力信号,2′・・・バ
イアス電流注入時の入力信号、4・・・周波変調コヒー
レント干渉系での光バイアスシフターへの入力信号、5
・・・出力信号、6・・・光中継器での光バイアスシフ
ターへの入力信号、7・・・出力信号、11・・・入力
信号の直流成分、12・・・出力信号の直流成分,13
・・・入力信号の信号成分、14・・・出力信号の信号
成分、31・・・信号電流源、32・・・半導体レーザ
光源、33・・・光バイアスシフター 34・・・光フ
ァイバ、35・・・受光器、36・・・電気信号増幅器
、37・・・無反射コーティング膜、38・・・光アイ
ソレータ、39・・・光カップラ、40・・・局部発振
レーザ光源,41・・・光増幅器,42・・・光フィル
ターb^仁
皐
事 1
)で
奉
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routFIG. 1 is an explanatory diagram showing input/output optical characteristics and signal light bias settings of the present invention, FIGS. 2 and 3 are schematic diagrams showing the basic configuration of an optical communication system according to an embodiment of the present invention, and FIG. The figure is a characteristic diagram showing the relationship between input and output light when the present invention is implemented in a coherent optical communication system, Figure 5 is a schematic diagram showing the basic configuration when the present invention is implemented in an optical repeater, and Figure 6 is a diagram showing the basic configuration when the present invention is implemented in an optical repeater. It is a characteristic diagram showing the relationship between input and output light when implemented in an optical repeater. 1-1... Input/output optical characteristics when bias current is zero, 1-2... Input/output characteristics when bias current is injected, 2.
...Input signal when bias current is zero, 2'...Input signal when bias current is injected, 4...Input signal to optical bias shifter in frequency modulation coherent interference system, 5
... Output signal, 6... Input signal to optical bias shifter in optical repeater, 7... Output signal, 11... DC component of input signal, 12... DC component of output signal, 13
... Signal component of input signal, 14... Signal component of output signal, 31... Signal current source, 32... Semiconductor laser light source, 33... Optical bias shifter 34... Optical fiber, 35 ... Light receiver, 36... Electric signal amplifier, 37... Anti-reflection coating film, 38... Optical isolator, 39... Optical coupler, 40... Local oscillation laser light source, 41... Optical amplifier, 42... Optical filter b^Jinkoji 1) to Fengku Bongkou Rout
Claims (1)
飽和吸収体において、入射光として高い光量レベルと低
い光量レベルを有する信号光を入射するとき、低い光量
レベルに対し可飽和吸収体の吸収域が、高い光量レベル
に対し飽和域が対応するように可飽和吸収体の飽和点入
射光量を設定することを特徴とする光バイアスシフター
。 2、電流を注入し、入力光に対し飽和吸収点を調節でき
ることを特徴とする光バイアスシフター。 3、光路中に可飽和吸収体を挿入し、信号光の強度変調
分と直流成分の比率を高める光バイアスシフターを用い
た光学系。 4、光増幅器と可飽和吸収体を用いた光中継器。[Claims] 1. In a saturable absorber having a region where the absorption coefficient decreases with respect to the amount of incident light, when signal light having a high light amount level and a low light amount level is input as the incident light, the absorption coefficient decreases with respect to the low light amount level. An optical bias shifter characterized in that the amount of incident light at the saturation point of the saturable absorber is set so that the absorption region of the saturable absorber corresponds to a high light amount level. 2. An optical bias shifter characterized by being able to adjust the saturation absorption point for input light by injecting a current. 3. An optical system that uses an optical bias shifter that inserts a saturable absorber into the optical path and increases the ratio of the intensity modulation component and the DC component of the signal light. 4. Optical repeater using optical amplifier and saturable absorber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4982189A JPH02230221A (en) | 1989-03-03 | 1989-03-03 | optical bias shifter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4982189A JPH02230221A (en) | 1989-03-03 | 1989-03-03 | optical bias shifter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02230221A true JPH02230221A (en) | 1990-09-12 |
Family
ID=12841770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4982189A Pending JPH02230221A (en) | 1989-03-03 | 1989-03-03 | optical bias shifter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02230221A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014178688A (en) * | 2013-03-14 | 2014-09-25 | Emcore Corp | Method of fabricating and operating optical modulator |
-
1989
- 1989-03-03 JP JP4982189A patent/JPH02230221A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014178688A (en) * | 2013-03-14 | 2014-09-25 | Emcore Corp | Method of fabricating and operating optical modulator |
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