JPH0223035Y2 - - Google Patents
Info
- Publication number
- JPH0223035Y2 JPH0223035Y2 JP1983155863U JP15586383U JPH0223035Y2 JP H0223035 Y2 JPH0223035 Y2 JP H0223035Y2 JP 1983155863 U JP1983155863 U JP 1983155863U JP 15586383 U JP15586383 U JP 15586383U JP H0223035 Y2 JPH0223035 Y2 JP H0223035Y2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- radio wave
- airtight container
- wave absorber
- metallized layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Description
【考案の詳細な説明】
〔産業上の利用分野〕
本考案は、半導体チツプ、インピーダンス整合
用回路基板その他の電子部品から構成されるマイ
クロ波集積回路を封入するための、金属製気密容
器の改良に関するものである。[Detailed description of the invention] [Field of industrial application] The present invention is an improvement of a metal airtight container for enclosing a microwave integrated circuit consisting of a semiconductor chip, an impedance matching circuit board, and other electronic components. It is related to.
第1図に従来例のマイクロ波集積回路用金属製
気密容器の断面構造図を示す。金属製気密容器は
基底部1、ふた部2、端子部3により構成され、
その内部にマイクロ波集積回路4が実装される。
このような金属製気密容器では、多くの回路機能
を収容しようとする場合および高い周波数帯域で
使用する場合に、金属製気密容器の寸法がマイク
ロ波の波長に近くなるため、金属製気密容器内面
でのマイクロ波反射による共振モードが発生する
ことがある。このため、伝送特性に周波数共振ま
たは反共振が発生したり、入力および出力インピ
ーダンスに急峻な周波数変化が生じることがあ
る。また、能動素子を使用している場合には、不
要発振が生じるなど、所望の特性や機能を得るこ
とが困難となる欠点があつた。
FIG. 1 shows a cross-sectional structural diagram of a conventional metal airtight container for a microwave integrated circuit. The metal airtight container is composed of a base part 1, a lid part 2, and a terminal part 3,
A microwave integrated circuit 4 is mounted inside it.
When such a metal airtight container is intended to accommodate many circuit functions or is used in a high frequency band, the dimensions of the metal airtight container become close to the microwave wavelength, so the inner surface of the metal airtight container A resonance mode may occur due to microwave reflection at Therefore, frequency resonance or anti-resonance may occur in the transmission characteristics, or a steep frequency change may occur in the input and output impedances. Furthermore, when active elements are used, there are drawbacks such as unnecessary oscillations, which make it difficult to obtain desired characteristics and functions.
また、マイクロ波回路基板上にパツケージを設
け、このパツケージの内面に電波吸収材を配して
高周波を吸収する技術(特開昭55−128901号公
報)や、集積回路チツプを収容するパツケージの
蓋や下面に電磁吸収体を設ける技術(実開昭57−
157147号公報)などが堤案されている。 In addition, there is a technology that absorbs high frequencies by providing a package on a microwave circuit board and arranging a radio wave absorbing material on the inner surface of the package (Japanese Patent Application Laid-open No. 128901/1982), and a technology that absorbs high frequencies by placing a package on the microwave circuit board, and a technique that absorbs high frequencies by placing a package on the inside of the package. Technology to provide an electromagnetic absorber on the lower surface of the
157147) etc. have been proposed.
〔発明が解決しようとする問題点〕
しかし、これらの技術では、単にマイクロ波が
外部に洩れることを防止することを目的とするも
のにすぎず、完全に金属製容器で密封されたマイ
クロ波集積回路が、その容器内部でマイクロ波の
反射等により、集積回路の特性や機能の低下等が
生ずることを防仕するものではなかつた。[Problems to be solved by the invention] However, these techniques merely aim to prevent microwaves from leaking to the outside; The circuit did not protect the integrated circuit from degrading its characteristics and functionality due to reflection of microwaves inside the container.
本考案は、上述の欠点を解消するもので、マイ
クロ波の洩れがなく、しかも金属製気密容器の内
面でのマイクロ波の反射を防ぐことにより、その
内部に実装されたマイクロ波集積回路の特性およ
び機能を改善することを目的とする。 This invention eliminates the above-mentioned drawbacks, and prevents microwave leakage and prevents reflection of microwaves on the inner surface of the metal airtight container, thereby improving the characteristics of the microwave integrated circuit mounted inside the container. and to improve functionality.
本考案は、マイクロ波集積回路を密封した金属
製気密容器内で、マイクロ波集積回路における不
要な共振モードの原因となる金属製気密容器内面
でのマイクロ波の反射を防ぐため、上記容器内面
にマイクロ波を減衰させる電波吸収体をその片面
に形成したメタライズ層によつて取付けた構造を
特徴とする。
The present invention is designed to prevent the reflection of microwaves on the inner surface of the metal hermetic container, which causes unnecessary resonance modes in the microwave integrated circuit, in a sealed metal container. It is characterized by a structure in which a radio wave absorber that attenuates microwaves is attached by a metallized layer formed on one side of the radio wave absorber.
金属製気密容器の内面に取付けられた電波吸収
体によつて、この金属製気密容器の内部で生ずる
マイクロ波を吸収して、マイクロ波の反射によつ
て生ずる共振モードや反共振モードの発生や入力
および出力インピーダンスの急峻な周波数変化を
防止する。
A radio wave absorber attached to the inner surface of the metal airtight container absorbs the microwaves generated inside the metal airtight container, preventing the generation of resonance mode and anti-resonance mode caused by microwave reflection. Prevent sudden frequency changes in input and output impedance.
以下図面に基づいて本考案実施例を説明する。 Embodiments of the present invention will be described below based on the drawings.
第2図は本考案第一実施例の構造を説明するた
めの断面構造図である。金属製気密容器は、マイ
クロ波集積回路4を基底部1とふた部2と端子部
3とで気密状態に密封している。この気密容器の
ふた部2の内面上部には電波吸収体5がろう付け
されている。このろう付けは電波吸収体の片面に
金属のメタライズ層を形成して行う。 FIG. 2 is a cross-sectional structural diagram for explaining the structure of the first embodiment of the present invention. The metal airtight container hermetically seals the microwave integrated circuit 4 with a base portion 1, a lid portion 2, and a terminal portion 3. A radio wave absorber 5 is brazed to the upper inner surface of the lid 2 of this airtight container. This brazing is performed by forming a metallized layer on one side of the radio wave absorber.
この構造により、ふた部2の内面に向う電磁波
は、電波吸収体5に吸収され減衰して、反射共振
を生じることがなくなる。 With this structure, electromagnetic waves directed toward the inner surface of the lid part 2 are absorbed and attenuated by the radio wave absorber 5, and no reflective resonance occurs.
第3図は本考案第二実施例の構造を示す断面構
造図である。この例では端子部3が基底部1を貫
通することなく、側壁を貫通する構造のものであ
つて、ふた部2の内面に取付けられた電波吸収体
5およびその作用は、前記第一実施例と同様であ
る。 FIG. 3 is a sectional view showing the structure of the second embodiment of the present invention. In this example, the terminal portion 3 does not penetrate through the base portion 1 but through the side wall, and the radio wave absorber 5 attached to the inner surface of the lid portion 2 and its function are similar to those of the first embodiment. The same is true.
共振モードによつては内面上部だけでなく内面
側部にも電波吸収体5をろう付けすることができ
る。 Depending on the resonance mode, the radio wave absorber 5 can be brazed not only to the upper part of the inner surface but also to the side part of the inner surface.
第4図および第5図に電波吸収体5の構造を示
す。第4図は、焼結した電波吸収材7の片面にメ
タライズ層6を設けたものである。このメタライ
ズ層面を金属製のふた部2の内面にろう付けする
ことによつて金属製気密容器に強固に取付けるこ
とができ、また、マイクロ波集積回路の半導体に
悪い影響を与えるガスが発生しないので有利であ
る。 The structure of the radio wave absorber 5 is shown in FIGS. 4 and 5. In FIG. 4, a metallized layer 6 is provided on one side of a sintered radio wave absorbing material 7. By brazing this metallized layer surface to the inner surface of the metal lid part 2, it can be firmly attached to the metal airtight container, and it is also advantageous because no gas is generated that would have a negative effect on the semiconductor of the microwave integrated circuit. It is.
第5図は、誘電体基板8の片面に第4図と同じ
メタライズ層6を設け、反対面に抵抗皮膜9を蒸
着したものである。このメタライズ層面は、上述
と同じく金属製のふた部2の内面にろう付けされ
る。また、抵抗皮膜は金属ケース内に発生する定
在波や共振電磁界が抵抗膜を通過する際に減衰さ
せるもので、電波吸収材と同一の作用効果をもた
らすものである。 In FIG. 5, the same metallized layer 6 as in FIG. 4 is provided on one side of a dielectric substrate 8, and a resistive film 9 is deposited on the opposite side. This metallized layer surface is brazed to the inner surface of the metal lid part 2 as described above. Further, the resistive film attenuates standing waves and resonant electromagnetic fields generated within the metal case when they pass through the resistive film, and provides the same effect as a radio wave absorbing material.
以上説明したように、本考案の構造によれば、
外部にマイクロ波を漏洩しない金属製気密容器の
内面でのマイクロ波の反射を防ぐことができる。
この結果、共振モードの発生を防止することがで
き、所望の特性や機能を安定に得ることが可能に
なる優れた効果がある。
As explained above, according to the structure of the present invention,
It is possible to prevent microwaves from being reflected on the inner surface of a metal airtight container that does not leak microwaves to the outside.
As a result, it is possible to prevent the generation of resonance modes, and there is an excellent effect that it is possible to stably obtain desired characteristics and functions.
第1図は従来例構造のマイクロ波集積回路用金
属製気密容器の断面図。第2図は本考案第一実施
例構造のマイクロ波集積回路用金属製気密容器の
断面図。第3図は本考案第二実施例構造のマイク
ロ波集積回路用金属製気密容器の断面図。第4図
は電波吸収体の構造を示す断面図。第5図は電波
吸収体の構造を示す断面図。
1……金属製気密容器基底部、2……金属製気
密容器ふた部、3……金属製気密容器端子部、4
……マイクロ波集積回路、5……電波吸収体、6
……メタライズ層、7……電波吸収材、8……誘
電体基板、9……抵抗皮膜。
FIG. 1 is a sectional view of a metal airtight container for a microwave integrated circuit having a conventional structure. FIG. 2 is a sectional view of a metal airtight container for a microwave integrated circuit having a structure according to a first embodiment of the present invention. FIG. 3 is a sectional view of a metal airtight container for a microwave integrated circuit having a structure according to a second embodiment of the present invention. FIG. 4 is a sectional view showing the structure of the radio wave absorber. FIG. 5 is a sectional view showing the structure of the radio wave absorber. DESCRIPTION OF SYMBOLS 1...Metal airtight container base part, 2...Metal airtight container lid part, 3...Metal airtight container terminal part, 4
...Microwave integrated circuit, 5...Radio wave absorber, 6
...Metalized layer, 7...Radio wave absorbing material, 8...Dielectric substrate, 9...Resistive film.
Claims (1)
体チツプを含むマイクロ波集積回路を収容して
密封する金属製気密容器において、 上記金属製蓋部の内面に電波吸収体がこの電
波吸収体の片面に形成されたメタライズ層によ
つて取付けられ、 この電波吸収体は上記金属製気密容器内で生
ずるマイクロ波が反射共振を生じないように減
衰させる構造である ことを特徴とするマイクロ波集積回路用金属製
気密容器。 2 1電波吸収体は、焼結した電波吸収材の片面
にメタライズ層が形成され、このメタライズ層
によつて金属製蓋部の内面にろう付けされる構
造である実用新案登録請求の範囲第(1)項に記載
のマイクロ波集積回路回路用金属製気密容器。 3 電波吸収体は、誘電体基板の片面にメタライ
ズ層が形成され、反対面に抵抗皮膜が蒸着さ
れ、上記メタライズ層によつて金属製蓋部の内
面にろう付けされる構造である実用新案登録請
求の範囲第(1)項に記載のマイクロ波集積回路用
金属製気密容器。[Scope of Claim for Utility Model Registration] 1. In a metal airtight container that houses and seals a microwave integrated circuit including a semiconductor chip with a metal base part and a metal lid part, the inner surface of the metal lid part A radio wave absorber is attached by a metallized layer formed on one side of the radio wave absorber, and this radio wave absorber has a structure that attenuates the microwaves generated within the metal airtight container so that reflected resonance does not occur. A metal airtight container for a microwave integrated circuit, characterized by: 2.1 Radio wave absorber has a structure in which a metallized layer is formed on one side of a sintered radio wave absorber, and this metallized layer is brazed to the inner surface of a metal lid. A metal airtight container for microwave integrated circuits as described in item 1). 3 The radio wave absorber has a structure in which a metallized layer is formed on one side of a dielectric substrate, a resistive film is deposited on the other side, and the metallized layer is brazed to the inner surface of a metal lid.Registered as a utility model. A metal airtight container for a microwave integrated circuit according to claim (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15586383U JPS6063948U (en) | 1983-10-06 | 1983-10-06 | Metal hermetic container for microwave integrated circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15586383U JPS6063948U (en) | 1983-10-06 | 1983-10-06 | Metal hermetic container for microwave integrated circuits |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6063948U JPS6063948U (en) | 1985-05-07 |
| JPH0223035Y2 true JPH0223035Y2 (en) | 1990-06-21 |
Family
ID=30344100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15586383U Granted JPS6063948U (en) | 1983-10-06 | 1983-10-06 | Metal hermetic container for microwave integrated circuits |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6063948U (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02276194A (en) * | 1987-09-01 | 1990-11-13 | Global Denshi Kenkyusho:Kk | Discharge lamp lighting device |
| JPH057101A (en) * | 1991-06-27 | 1993-01-14 | Mitsubishi Electric Corp | Package for electronic circuit |
| JP2002057513A (en) * | 2000-08-11 | 2002-02-22 | Denso Corp | Millimeter wave module |
| JP4610134B2 (en) * | 2001-08-09 | 2011-01-12 | 京セラ株式会社 | High frequency circuit package |
| JP2003218249A (en) * | 2002-01-18 | 2003-07-31 | Mitsui Chemicals Inc | Semiconductor hollow package |
| JP4028769B2 (en) * | 2002-06-21 | 2007-12-26 | 京セラ株式会社 | Electromagnetic wave absorber and high frequency circuit package using the same |
| JP4028765B2 (en) * | 2002-06-18 | 2007-12-26 | 京セラ株式会社 | Electromagnetic wave absorber and high frequency circuit package using the same |
| JP3830430B2 (en) * | 2002-07-09 | 2006-10-04 | 京セラ株式会社 | High frequency circuit package lid, manufacturing method thereof, and high frequency circuit package using the same |
| JP4189234B2 (en) * | 2003-02-19 | 2008-12-03 | 京セラ株式会社 | Radio wave absorbing lid member and high-frequency device using the same |
| JP4979500B2 (en) * | 2007-07-31 | 2012-07-18 | 独立行政法人理化学研究所 | CT monitor |
| JP5571006B2 (en) * | 2011-01-17 | 2014-08-13 | 富士通株式会社 | Circuit module |
| JP2017195325A (en) * | 2016-04-22 | 2017-10-26 | 三菱電機株式会社 | Microwave device |
| JP2019179790A (en) * | 2018-03-30 | 2019-10-17 | 日本電信電話株式会社 | High frequency module |
| JP6782340B1 (en) * | 2019-07-24 | 2020-11-11 | 星和電機株式会社 | Electromagnetic wave absorption unit and electronic circuit |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5068464A (en) * | 1973-10-19 | 1975-06-07 | ||
| JPS5580400A (en) * | 1978-12-12 | 1980-06-17 | Tdk Electronics Co Ltd | Device for preventing leakage of radio wave |
| JPS55128901A (en) * | 1979-03-28 | 1980-10-06 | Nippon Telegr & Teleph Corp <Ntt> | High frequency circuit device |
| JPS57157147U (en) * | 1980-11-22 | 1982-10-02 |
-
1983
- 1983-10-06 JP JP15586383U patent/JPS6063948U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6063948U (en) | 1985-05-07 |
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