JPH02230532A - Magneto-optical recording medium - Google Patents
Magneto-optical recording mediumInfo
- Publication number
- JPH02230532A JPH02230532A JP4992189A JP4992189A JPH02230532A JP H02230532 A JPH02230532 A JP H02230532A JP 4992189 A JP4992189 A JP 4992189A JP 4992189 A JP4992189 A JP 4992189A JP H02230532 A JPH02230532 A JP H02230532A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnetic
- alloy layer
- layers
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 abstract description 24
- 239000010409 thin film Substances 0.000 abstract description 7
- 230000007423 decrease Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 170
- 229910045601 alloy Inorganic materials 0.000 description 46
- 239000000956 alloy Substances 0.000 description 46
- 229910000640 Fe alloy Inorganic materials 0.000 description 27
- 230000008878 coupling Effects 0.000 description 24
- 238000010168 coupling process Methods 0.000 description 24
- 238000005859 coupling reaction Methods 0.000 description 24
- 229910017061 Fe Co Inorganic materials 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- 229910000531 Co alloy Inorganic materials 0.000 description 9
- 229910017112 Fe—C Inorganic materials 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- -1 etc. Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000012300 argon atmosphere Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000005415 magnetization Effects 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical class [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910002546 FeCo Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 240000008100 Brassica rapa Species 0.000 description 1
- 229910001339 C alloy Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野１
本発明は光磁気記録媒体に関し、さらに詳しくは磁気的
結合力が良好に制御された磁性多層膜よりなる記録膜を
有する光磁気記録媒体に関する。Detailed Description of the Invention [Industrial Application Field 1] The present invention relates to a magneto-optical recording medium, and more particularly to a magneto-optical recording medium having a recording film made of a magnetic multilayer film with well-controlled magnetic coupling force. .
［従来の技術］
従来、組成の異なる複数の磁性薄膜を１枚の基板上に作
製した磁性多層膜は、オーバライ１〜可能な光磁気記録
用媒体もしくは高感度化媒体とじてさかんに研究されて
いる。このうち、２層膜を利用したオーバライト方式と
しては、先行補助磁界と２層膜を用いてオーバライ１〜
を可能にした方式（特開昭６２−１７５９４８号公報参
照）や、外部磁界印ｈ目装置を用いることなしに、２層
膜を用いてオバライ１〜を可能にした方式（特開昭６２
−１５４３４７号公報参照）等が知られている。[Prior Art] Conventionally, magnetic multilayer films in which a plurality of magnetic thin films with different compositions are fabricated on a single substrate have been actively researched as magneto-optical recording media or high-sensitivity media capable of overwriting. There is. Among these, as an overwrite method using a two-layer film, overwrite 1 to 1 using a preceding auxiliary magnetic field and a two-layer film
(see Japanese Unexamined Patent Publication No. 175948/1982), and a method that enables overlay 1~ using a two-layer film without using an external magnetic field marking device (see Japanese Unexamined Patent Publication No. 62-175948).
-154347) etc. are known.
し発明が解決しようとする課題］
オーバライ１〜可能な２層膜媒体のＭ−１−１ループは
、環境温度において、第２図に示すような２段階の反転
磁界を持つものでなければならない。例えば、第１磁性
層の磁化と第２磁性層の磁化が同じ方向の時にエネルキ
ー的に安定なパラレルタイプの２層媒体において、反転
磁界が２段階になる条件は、次式［Ｉ］で表される。[Problems to be Solved by the Invention] The M-1-1 loop of a two-layer film medium capable of overlay 1 to 1 must have a two-stage reversal magnetic field as shown in FIG. 2 at ambient temperature. . For example, in a parallel type two-layer medium that is energetically stable when the magnetization of the first magnetic layer and the magnetization of the second magnetic layer are in the same direction, the conditions for the reversal magnetic field to be in two stages are expressed by the following equation [I]. be done.
１」（σ ／２Ｍ，１ｔ１）＞
ｃｌ ｗ
１−１。２＋（σｗ／２Ｍ，２ｔ２ ）−［Ｉ ］但し
、１」。１；記録層（第１の磁性層）の保磁力１−１ｏ
２；記録補助層（第２の磁性層）の保磁力
Ｍ，１；記録層の飽和磁化
ＭＳ２；記録補助層の飽和磁化
ｔ１ ；記録層の膜厚
ｔ２ ；記録補助層の膜厚
σッ；単位面積当たりの界面磁壁エネルギ
を満たすことであるが、２層間の磁気的結合力が強すぎ
ると上式のσッが大きくなり過ぎるため、Ｍ − １−
１ループは第３図に示したような反転磁界を１段階しか
持たないル−プになってしまう。ところか、従来は２層
間の磁気的結合力を調節することかできないため、２段
階の反転磁界のＭ−Ｈルプを持つ光磁気記録媒体を作製
ずることが困難であった。上記、従来技術の項で示した
、特開昭６２−１７５９４８＠公報および特開昭６２−
１５４３４７号公報においても、２段階の反転磁界のＭ
−１」ル−ブを得る具体的な方法は述べられていない。1"(σ/2M, 1t1)>cl w 1-1.2+(σw/2M, 2t2)-[I] However, 1". 1; Coercive force of recording layer (first magnetic layer) 1-1o
2; Coercive force M, 1 of the recording auxiliary layer (second magnetic layer); Saturation magnetization MS2 of the recording layer; Saturation magnetization t1 of the recording auxiliary layer; Film thickness t2 of the recording layer; Film thickness σ of the recording auxiliary layer; The goal is to satisfy the interfacial domain wall energy per unit area, but if the magnetic coupling force between the two layers is too strong, σ in the above equation becomes too large, so M - 1 -
One loop ends up being a loop having only one level of reversal magnetic field as shown in FIG. However, in the past, it was only possible to adjust the magnetic coupling force between the two layers, so it was difficult to produce a magneto-optical recording medium having a two-stage reversal field M-H loop. JP-A-62-175948@ and JP-A-62- shown in the prior art section above.
In the publication No. 154347, M of the two-stage reversal magnetic field is also disclosed.
A specific method for obtaining a 1" rube is not described.
本発明の目的は、光磁気記録膜を構成している各磁性層
間の磁気的結合力を調節することのでぎる光磁気記録媒
体を提供覆ることにある。An object of the present invention is to provide a magneto-optical recording medium in which the magnetic coupling force between the magnetic layers constituting the magneto-optical recording film can be adjusted.
［課題を解決ずるための千段１
本発明は、基板上に少なくとも記録膜が形成された光磁
気記録媒体にあいて、記録膜か第１の磁性層と、該磁性
層上に形成された非磁性層と、該非磁性層上に形成され
た第２の磁性層の３層からなることを特徴とする光磁気
記録媒体である。[1,000 Steps to Solve the Problems] The present invention provides a magneto-optical recording medium in which at least a recording film is formed on a substrate. This is a magneto-optical recording medium characterized by comprising three layers: a non-magnetic layer and a second magnetic layer formed on the non-magnetic layer.
本発明にお（プる非磁性層は、成膜されている磁性層上
に、スパッタや蒸着等により、ごく薄く、例えば数八の
厚さに成膜されたものである。その４，Ｊ貿としては、
例えば酸化タンタル、酸化アルミウム、酸化ケイ素、窒
化タンタル、窒化アルミウム、窒化ケイ素、銅、銀、金
等が挙げられる。The nonmagnetic layer used in the present invention is formed on the magnetic layer by sputtering, vapor deposition, etc. to a very thin film, for example, to a thickness of several eights. Part 4, J As for trade,
Examples include tantalum oxide, aluminum oxide, silicon oxide, tantalum nitride, aluminum nitride, silicon nitride, copper, silver, and gold.
また、本発明にお（プる磁性多層膜の各磁性層は、希土
類と遷移金属の絹み合わせからなるアーＥルファス合金
薄膜で構成ざれたものである。このうち、希土類として
は、例えば王ｂ，Ｇｄ， Ｄｙ．Ｎｄ．ト｛Ｏ等の中か
ら単独または複数の元素か用いられ、溢移金属としでは
、例えば「ｅ．ｃ○，Ｎｉ等の中から単独または複数の
元素か用いられる。また、少量のＴｉ，Ｍｏ等を添加づ
−ることも可能でおる。In addition, each magnetic layer of the magnetic multilayer film according to the present invention is composed of an Arfas alloy thin film made of a combination of rare earth elements and transition metals. Single or multiple elements are used from among b, Gd, Dy.Nd. It is also possible to add a small amount of Ti, Mo, etc.
１作用］
磁気的結含ノＪには、交換結合力と靜磁結合力の２種類
かある。交換結合力は量子力学的効果でおるから、原子
間距離か数原子分離れただけでも著しく低下する。また
、靜磁結合力は薄膜間に働くクーロン力であるから、２
つの薄膜間の距離が離れると低下する。従って、光磁気
記録膜において、隣り合っている磁性層間に非磁性層を
挟んで、磁性層間の距離を離せば磁気的結合力を減少さ
せることができる。1 Effect] There are two types of magnetic coupling: exchange coupling force and magnetic coupling force. Since the exchange bond force is a quantum mechanical effect, it decreases significantly even if the distance between atoms is increased by just a few atoms. In addition, since the magnetic coupling force is a Coulomb force acting between thin films, 2
It decreases as the distance between the two thin films increases. Therefore, in a magneto-optical recording film, by sandwiching a nonmagnetic layer between adjacent magnetic layers and increasing the distance between the magnetic layers, the magnetic coupling force can be reduced.
［実施例］
次に本発明の実施例について、図面を参照して詳細に説
明する。[Example] Next, an example of the present invention will be described in detail with reference to the drawings.
第１図は、本発明の一実施例を示す光磁気記録２層膜媒
体の部分断面図でおる。媒体構成は、基板１／スペーサ
層２／第１の磁性層３／非磁性層４／第２の磁性層５／
保護層６である。ここで、基板１としては、ポリカーボ
ネ−１へ樹脂，エポキシ樹脂，カラス等よりなる基板ま
たはガラスの上に紫外線硬化樹脂等でグループを形成さ
せた基板等を使用する。スペーサ層２および保護層６と
しては、珪素の窒化物，珪素の酸化物，タンタルの酸化
物，アルミニウムの窒化物，アルミニウムの酸化物等が
使用できる。また、第１の磁性層３および第２の磁性層
５は希土類と遷移金属の組み合わせからなるアモルファ
ス合金薄膜である。FIG. 1 is a partial cross-sectional view of a magneto-optical recording dual-layer film medium showing an embodiment of the present invention. The medium configuration is substrate 1/spacer layer 2/first magnetic layer 3/nonmagnetic layer 4/second magnetic layer 5/
This is the protective layer 6. Here, as the substrate 1, a substrate made of polycarbonate resin, epoxy resin, glass, etc., or a substrate made of glass with groups formed of ultraviolet curing resin, etc., is used. As the spacer layer 2 and the protective layer 6, silicon nitride, silicon oxide, tantalum oxide, aluminum nitride, aluminum oxide, etc. can be used. Further, the first magnetic layer 3 and the second magnetic layer 5 are amorphous alloy thin films made of a combination of rare earth elements and transition metals.
以下、実施例１〜９は、非磁性層として種々の物質を用
いた場合を示したものである。説明を簡単にずるため、
実施例１〜９における磁性層としては、以下に示した同
一の膜構成および単層にあける同一の磁気特性を持つ磁
性層を用いた。成膜はずべてＲＦマグネトロンスパツタ
装置の連続スパッタによる。また、本実施例において非
磁性層の膜厚として１〜２八と原子半径以下の膜厚値を
用いているが、これは積層速度に成膜時間をかけて得ら
れる値を意味している。Examples 1 to 9 below show cases in which various materials were used as the nonmagnetic layer. To simplify the explanation,
As the magnetic layers in Examples 1 to 9, magnetic layers having the same film structure and the same magnetic properties provided in a single layer as shown below were used. All films were formed by continuous sputtering using an RF magnetron sputtering device. Furthermore, in this example, the film thickness of the nonmagnetic layer is 1 to 28, which is less than the atomic radius, but this means the value obtained by multiplying the deposition speed by the deposition time. .
膜構成
ポリカーボネ−ト基板／窒化珪素（８００人〉／Ｔｂ−
Ｆｅ合金（１０００人〉／非磁性層／Ｔｂ「ｅ−Ｃｏ合
金（１００人）／窒化珪素（８００人〉実施例１（非磁
性層としてタンタルの酸化物を２人形成させた場合）
酸素とアルゴンの混合雰囲気中でタンタルをスパッタし
、Ｔｂ−Ｆｅ合金層と王ｂ−Ｆｅ−Ｃｏ合金層間に非磁
性層としてタンタルの酸化物を２人形成させたところ、
Ｔｂ−Ｆｅ合金層と丁ｂＦｅ−ＣＯ合金層間の磁気的結
合力か弱められ、第２図に示ずような２段階の反転磁界
を持つ力ループか得られた。この場合、Ｔｂ−Ｆｅ合金
層およびＴｂ−Ｆｅ−Ｃｏ合金層の反転磁界は、それぞ
れ７．２ ｋＯｅおよび５．４ ｋｏｅであった。Film composition Polycarbonate substrate/Silicon nitride (800 people>/Tb-
Fe alloy (1000 people) / Non-magnetic layer / Tb "e-Co alloy (100 people) / Silicon nitride (800 people) Example 1 (when two tantalum oxides are formed as the non-magnetic layer) Oxygen and When tantalum was sputtered in a mixed atmosphere of argon to form two tantalum oxides as a nonmagnetic layer between the Tb-Fe alloy layer and the Tb-Fe-Co alloy layer,
The magnetic coupling force between the Tb-Fe alloy layer and the TbFe-CO alloy layer was weakened, and a force loop with a two-stage switching field as shown in FIG. 2 was obtained. In this case, the reversal magnetic fields of the Tb-Fe alloy layer and the Tb-Fe-Co alloy layer were 7.2 kOe and 5.4 koe, respectively.
実施例２（非磁性層としてアルミニウムの酸化物を２人
形成させた場合）
酸素とアルゴンの混合雰囲気中でアルミニウムをスパッ
タし、丁ｂ−Ｆｅ合金層と丁ｂ−Ｆｅ−Ｃ○合金層間に
非磁性層としてアルミニウムの酸化物を２人形成させた
ところ、Ｔｂ−ＦＣ合金層とＴｂ−Ｆｅ−Ｃｏ合金層間
の磁気的結合力か弱められ、第２図に示すような２段階
の反転磁界を持つカーループが得られた。この場合、Ｔ
ｂＦｅ合金層あよび下ｂ−Ｆｅ−Ｃ○合金層の反転磁界
は、それぞれ７．５ ｋＯｅおよび５．３ ｋｅｅテあ
つＩこ 。Example 2 (When two aluminum oxides are formed as a non-magnetic layer) Aluminum is sputtered in a mixed atmosphere of oxygen and argon to form a layer between the D-b-Fe alloy layer and the D-b-Fe-C○ alloy layer. When two aluminum oxides are formed as nonmagnetic layers, the magnetic coupling force between the Tb-FC alloy layer and the Tb-Fe-Co alloy layer is weakened, resulting in a two-stage reversal magnetic field as shown in Figure 2. A car loop with was obtained. In this case, T
The reversal magnetic fields of the upper b-Fe alloy layer and the lower b-Fe-C○ alloy layer are 7.5 kOe and 5.3 kOe, respectively.
実施例３（非磁性層としてタンタルの窒化物を２人形成
させた場合）
窒素とアルゴンの混合雰囲気中でタンタルをスパッタし
、王ｂ − Ｆ ｅ合金層とＴｂ−Ｆｅ−Ｃ，ｏ合金層
間に非磁性層としてタンタルの窒化物を２人形成させた
ところ、Ｔｂ−Ｆｅ合金層とＴｂＦｅ−Ｃｏ合金層間の
磁気的結合力か弱められ、第２図に示すような２段階の
反転磁界を持つ力ループが得られた。この場合、ｌｂ−
Ｆｅ合金闇およびＴｂ−Ｆｅ−Ｃ○合金層の反転磁界は
、それぞれ７．８ｋＯｅおよび５．０ ｋｏｅテあった
。Example 3 (When two tantalum nitrides are formed as a nonmagnetic layer) Tantalum is sputtered in a mixed atmosphere of nitrogen and argon to form a layer between the Tb-Fe alloy layer and the Tb-Fe-C, o alloy layer. When two tantalum nitrides were formed as non-magnetic layers in the magnetic layer, the magnetic coupling force between the Tb-Fe alloy layer and the TbFe-Co alloy layer was weakened, resulting in a two-stage reversal magnetic field as shown in Figure 2. A power loop was obtained. In this case, lb-
The reversal magnetic fields of the Fe alloy layer and the Tb-Fe-C○ alloy layer were 7.8 kOe and 5.0 koe, respectively.
実施例４（非磁性層としてアルミニウムの窒化物を２人
形成させた場合）
窒素とアルゴンの混合雰囲気中でアルミニウムをスパツ
タし、Ｔｂ−Ｆｅ合金層とＴｂ−ＦｅＣｏ合金層間に非
磁性層としてアルミニウムの窒化物を２人形成させたと
ころ、Ｔｂ−Ｆｅ合金層とＴｂ−Ｆｅ−Ｃｏ合金層間の
磁気的結合力が弱められ、第２図に示すような２段階の
反転磁界を持つカーループが得られた。この場合、Ｔｂ
Ｆｅ合金層および丁ｂ−Ｆｅ−Ｃｏ合金層の反転磁界は
、それぞれ８．４． ｋＯｅおよび４．５ ｋＯｅてあ
った。Example 4 (When two aluminum nitrides are formed as a nonmagnetic layer) Aluminum is sputtered in a mixed atmosphere of nitrogen and argon, and aluminum is formed as a nonmagnetic layer between a Tb-Fe alloy layer and a Tb-FeCo alloy layer. When two nitrides were formed, the magnetic coupling force between the Tb-Fe alloy layer and the Tb-Fe-Co alloy layer was weakened, and a Kerr loop with a two-stage reversal magnetic field as shown in Figure 2 was obtained. It was done. In this case, Tb
The reversal magnetic field of the Fe alloy layer and the Fe-Co alloy layer is 8.4. kOe and 4.5 kOe.
実施例５（非磁性層としてアルミニウムの窒化物を１人
形成させた場合）
窒素とアルゴンの混合雰囲気中でアルミニウムをスパツ
タし、Ｔｂ−Ｆｅ合金層とＴｂ−ＦｅＣｏ合金層間に非
磁性層としてアルミニウムの窒化物を１人形成させたと
ころ、Ｔｂ−Ｆｅ合金ＨとＴｂ−Ｆｅ−Ｃｏ合金層間の
磁気的結合力が弱められ、第２図に示すような２段階の
反転磁界を持つカーループが得られた。この場合、−「
ｂ −Ｆｅ合金層およびＴｂ−Ｆｅ−Ｃｏ合金層の反転
磁界は、それぞれ６．９ ｋＯｅおよび５．８ ｋｏｅ
であった。Example 5 (When one aluminum nitride is formed as a nonmagnetic layer) Aluminum is sputtered in a mixed atmosphere of nitrogen and argon, and aluminum is formed as a nonmagnetic layer between a Tb-Fe alloy layer and a Tb-FeCo alloy layer. When one nitride was formed, the magnetic coupling force between the Tb-Fe alloy H and the Tb-Fe-Co alloy layer was weakened, and a Kerr loop with a two-stage reversal magnetic field as shown in Figure 2 was obtained. It was done. In this case, −“
The switching fields of the b-Fe alloy layer and the Tb-Fe-Co alloy layer are 6.9 kOe and 5.8 koe, respectively.
Met.
実施例６（非磁性層としてアルミニウムの窒化物を３人
形成させた場合）
窒素とアルゴンの混合雰囲気中でアルミニウムをスパッ
タし、丁ｂ−Ｆｅ合金層とＴｂ一Ｆｅ−ＣＯ合金層間に
非磁性層としてアルミニウムの窒化物を３人形成させた
ところ、Ｔｂ一Ｆｅ合金層と王ｂ−Ｆｅ−Ｃｏ合金層間
の磁気的結合力が弱められ、第２図に示すような２段階
の反転磁界を持つカーループが得られた。この場合、Ｔ
ｂ−［ｅ合金層あよび王ｂ−Ｆｅ−Ｃｏ合金層の反転ｑ
磁界は、それぞれ９．０ ｋＯｅおよび３．８ ｋｏｅ
であった。Example 6 (When three aluminum nitrides are formed as a nonmagnetic layer) Aluminum is sputtered in a mixed atmosphere of nitrogen and argon to form a nonmagnetic layer between the Tb-Fe alloy layer and the Tb-Fe-CO alloy layer. When three aluminum nitride layers were formed, the magnetic coupling force between the Tb-Fe alloy layer and the Tb-Fe-Co alloy layer was weakened, resulting in a two-step reversal magnetic field as shown in Figure 2. A car loop was obtained. In this case, T
The magnetic fields of the b-[e alloy layer and the b-Fe-Co alloy layer are 9.0 kOe and 3.8 koe, respectively.
Met.
実施例７（非磁性層として珪素の酸化物を２人形成させ
た場合）
酸素とアルゴンの混合雰囲気中で珪素をスパッタし、王
ｂ−Ｆｅ合金層とＴｂ−Ｆｅ−Ｃｏ合金層間に非磁性層
として珪素の酸化物を２人形成させたところ、Ｔｂ−Ｆ
ｅ合金層と王ｂ−［ｅＣｏ合金層間の磁気的結合力か弱
められ、第２図に示すような２段階の反転磁界を持つカ
ーループが得られた。この場合、Ｔｂ＝Ｆｅ合金層およ
びＴｂ−Ｆｅ−Ｃ○合金層の反転磁界は、それぞれ７．
６ｋＯｅおよびＬ８ ｋｏｅであった。Example 7 (When two silicon oxides are formed as a nonmagnetic layer) Silicon is sputtered in a mixed atmosphere of oxygen and argon to form a nonmagnetic layer between the Tb-Fe alloy layer and the Tb-Fe-Co alloy layer. When two silicon oxides were formed as a layer, Tb-F
The magnetic coupling force between the e-alloy layer and the b-[eCo alloy layer was weakened, and a Kerr loop with a two-step reversal magnetic field as shown in FIG. 2 was obtained. In this case, the reversal magnetic fields of the Tb=Fe alloy layer and the Tb-Fe-C○ alloy layer are 7.
6 kOe and L8 koe.
実施例８（非磁性層として珪素の窒化物を２Ａ形成させ
た場合》
窒素とアルゴンの混合雰囲気中で珪素をスパッタし、工
ｂ−「ｅ合金層とＴ− ｂ−Ｆ ｅ−Ｃ ｏ合金層間に
非磁性層として珪素の窒化物を２人形成させたところ、
Ｔｂ−「ｅ合金層と王ｂ−ＦｅＣＯ合金層間の磁気的結
合力か弱められ、第２図に示すような２段階の反転磁界
を持つカール−プが得られた。この場合、Ｔｂ−Ｆｅ合
金層およびＴ ｂ − Ｆ ｅ − Ｃ Ｏ合金層の反
転磁界は、それぞれ８．３ ｋＯｅおよび４．４ ｋｏ
ｅであった。Example 8 (When 2A of silicon nitride is formed as a nonmagnetic layer) Silicon is sputtered in a mixed atmosphere of nitrogen and argon to form a When two silicon nitrides were formed as nonmagnetic layers between the layers,
The magnetic coupling force between the Tb-e alloy layer and the FeCO alloy layer was weakened, and a curl with a two-step reversal magnetic field as shown in Figure 2 was obtained. The switching fields of the alloy layer and Tb-Fe-CO alloy layer are 8.3 kOe and 4.4 ko, respectively.
It was e.
実施例９（非磁性層として銅を２人形成させた場合）
アルゴン雰囲気中で銅をスパッタし、Ｔｂ「ｅ合金層と
Ｈｂ−「ｅ−Ｃｏ合金層間に非磁性層として銅を２人形
成させたところ、ｌｂ−４’ｅ合金層と王ｂ−「ｅ−Ｃ
ｏ合金層間の磁気的結合力が弱められ、第２図に示すよ
うな２段階の反転磁界を持つカーループが得られた。こ
の場合、ｌｂ−Ｆｅ合金層および王ｂ−Ｆ ｅ−Ｃ Ｏ
合金層の反転磁界は、それぞれ７．８ ｋＯｅおよび５
．５ ｋｏｅであった。Example 9 (When two copper layers are formed as a nonmagnetic layer) Copper is sputtered in an argon atmosphere to form two copper layers as a nonmagnetic layer between the Tb-e alloy layer and the Hb-e-Co alloy layer. When the lb-4'e alloy layer and the king b-'e-C
The magnetic coupling force between the o-alloy layers was weakened, and a Kerr loop with a two-stage reversal magnetic field as shown in FIG. 2 was obtained. In this case, the lb-Fe alloy layer and the lb-Fe-C O
The switching field of the alloy layer is 7.8 kOe and 5 kOe, respectively.
．． It was 5 koe.
実施例１０（非磁性層として銅を１人形成させた場合）
アルゴン雰囲気中で銅をスパッタし、ＴｂＦｅ合金層と
王ｂ−「ｅ−Ｃ○合金層間に非磁性層として銅を１人形
成させたところ、ｌ−Ｆｅ］２
合金層と王ｂ−「ｅ−Ｃｏ合金層間の磁気的結合力か弱
められ、第２図に示すような２段階の反転磁界を持つカ
ーループか得られた。この場合、丁ｂ−Ｆｅ合金層あよ
び丁ｂ−Ｆｅ−Ｃｏ合金層の反転磁界は、それぞれ６．
４ｋＯｅおよび６．０ ｋｏｅであった。Example 10 (When one layer of copper is formed as a non-magnetic layer) Copper is sputtered in an argon atmosphere to form one layer of copper as a non-magnetic layer between the TbFe alloy layer and the C alloy layer. As a result, the magnetic coupling between the l-Fe]2 alloy layer and the e-Co alloy layer was weakened, and a Kerr loop with a two-stage switching field as shown in FIG. 2 was obtained. In this case, the reversal magnetic fields of the Db-Fe alloy layer and the Db-Fe-Co alloy layer are 6.
4 kOe and 6.0 koe.
実施例１１（非磁性層として銅を３人形成させた場合）
アルゴン雰囲気中で銅をスパッタし、丁ｂ［ｅ合金層と
Ｔｂ一「ｅ−ＣＯ合金層間に非磁性層として銅を３人形
成させたところ、Ｔｂ−Ｆｅ合金層とＴｂ−Ｆｅ−Ｃ○
合金層間の磁気的結合力が弱められ、第２図に示すよう
な２段階の反転磁界を持つカーループが得られた。この
場合、Ｔｂ一［ｅ合金層およびＴｂ−Ｆｅ−Ｃｏ合金層
の反転磁界は、それぞれ８．８ ｋｏｅおよび４ｊｌ
ｋｏｅであった。Example 11 (When three copper layers were formed as a non-magnetic layer) Copper was sputtered in an argon atmosphere, and three copper layers were formed as a non-magnetic layer between the Tb[e alloy layer and the Tb-CO alloy layer]. When formed, a Tb-Fe alloy layer and a Tb-Fe-C○
The magnetic coupling force between the alloy layers was weakened, and a Kerr loop with a two-stage reversal magnetic field as shown in FIG. 2 was obtained. In this case, the reversal magnetic fields of the Tb-[e alloy layer and the Tb-Fe-Co alloy layer are 8.8 koe and 4jl, respectively.
It was koe.
実施例１２（非磁性層として銀を２人形成させた場合）
アルゴン雰囲気中で銀をスパツタし、丁ｂ「ｅ合金層と
王ｂ−Ｆｅ−Ｃｏ合金層間に非磁性層として銀を２Ａ形
成させたところ、ｌｂ−Ｆｅ合金層と丁ｂ−Ｆｅ−Ｃｏ
合金層間の磁気的結合ノノが弱められ、第２図に示ずよ
うな２段階の反転磁界を持つカ−ループが得られた。こ
の場合、Ｔｂ−Ｆｅ合金層およびＴｂ−Ｆｅ−Ｃ○合金
層の反転磁界は、それぞれ７．６ ｋｏｅおよび５．２
ｋｏｅであった。Example 12 (When two layers of silver were formed as a non-magnetic layer) Silver was sputtered in an argon atmosphere to form 2A of silver as a non-magnetic layer between the alloy layer and the Fe-Co alloy layer. When the lb-Fe alloy layer and the lb-Fe-Co
The magnetic coupling between the alloy layers was weakened, and a Kerr loop with a two-stage reversal magnetic field as shown in FIG. 2 was obtained. In this case, the reversal magnetic fields of the Tb-Fe alloy layer and the Tb-Fe-C○ alloy layer are 7.6 koe and 5.2 koe, respectively.
It was koe.
実施例１３（非磁性層として金を２人形成させた場合）
アルゴン雰囲気中で金をスパッタし、ＨｂＦｅ合金層と
Ｔｂ−Ｆｅ−Ｃｏ合金層間に非磁性層として金を２人形
成させたところ、Ｔｂ−Ｆｅ合金層とＴｂ 一Ｆｅ−Ｇ
ｏ合金層間の磁気的結合力が弱められ、第２図に示すよ
うな２段階の反転磁界を持つカーループが得られた。こ
の場合、Ｔｂ一Ｆｅ合金層およびＴｂ−Ｆｅ−Ｃｏ合金
層の反転磁界は、それぞれ７．４ ｋＯｅあよび５．８
ｋｏｅであった。Example 13 (When two gold layers are formed as nonmagnetic layers) Gold is sputtered in an argon atmosphere to form two gold layers as nonmagnetic layers between the HbFe alloy layer and the Tb-Fe-Co alloy layer. , Tb-Fe alloy layer and Tb-Fe-G
The magnetic coupling force between the o-alloy layers was weakened, and a Kerr loop with a two-stage reversal magnetic field as shown in FIG. 2 was obtained. In this case, the reversal magnetic fields of the Tb-Fe alloy layer and the Tb-Fe-Co alloy layer are 7.4 kOe and 5.8 kOe, respectively.
It was koe.
比較例１（非磁性層を形成させない場合〉−［ｂ一［ｅ
合金層とＴｂ−Ｆｅ−Ｃｏ合金層の間に非磁性層を形成
しない場合は、Ｔｂ−Ｆｅ合金層と丁ｂ 一Ｆ ｅ −
Ｃ ｏ合金層間の磁気的結合力か強ずぎるため、カー
ループは第３図に示すような１段階しか反転磁界を含ま
ないループとなった。Comparative Example 1 (case where non-magnetic layer is not formed) - [b-[e
When a nonmagnetic layer is not formed between the alloy layer and the Tb-Fe-Co alloy layer, the Tb-Fe alloy layer and the
Because the magnetic coupling force between the Co alloy layers was so strong, the Kerr loop became a loop containing only one level of switching field as shown in FIG. 3.
［発明の効果］
以上説明したように、本発明によれば磁性多層膜の磁性
層間に薄い非磁性層を形成させることにより、磁性層間
の磁気的結合力を調節することが可能になり、優れた特
性を有ずる光磁気記録媒体が提供される。[Effects of the Invention] As explained above, according to the present invention, by forming a thin non-magnetic layer between the magnetic layers of a magnetic multilayer film, it is possible to adjust the magnetic coupling force between the magnetic layers, which is excellent. A magneto-optical recording medium having such characteristics is provided.
【図面の簡単な説明】
第１図は本発明の光磁気記録媒体の一例の部分断面図、
第２図は本発明の一実施例によるオーバライト用２層膜
媒体のＭ−Ｈループを示す特性図、第３図は従来例によ
る２＠膜媒体のＭ−１」ループを示す特性図である。
１・・・基板 ２・・・スペーザ層３・
・・第１の磁性層 ４・・・非磁性層５・・・第
２の磁性層
６・・・保護層[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1 is a partial cross-sectional view of an example of the magneto-optical recording medium of the present invention;
FIG. 2 is a characteristic diagram showing the M-H loop of a two-layer film medium for overwriting according to an embodiment of the present invention, and FIG. 3 is a characteristic diagram showing the M-1 loop of a 2@film medium according to a conventional example. be. 1...Substrate 2...Spacer layer 3.
...First magnetic layer 4...Nonmagnetic layer 5...Second magnetic layer 6...Protective layer
Claims (1)
録媒体において、記録膜が第１の磁性層と、該磁性層上
に形成された非磁性層と、該非磁性層上に形成された第
２の磁性層の３層からなることを特徴とする光磁気記録
媒体。(1) In a magneto-optical recording medium in which at least a recording film is formed on a substrate, the recording film includes a first magnetic layer, a nonmagnetic layer formed on the magnetic layer, and a nonmagnetic layer formed on the nonmagnetic layer. A magneto-optical recording medium comprising three layers including a second magnetic layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4992189A JPH02230532A (en) | 1989-03-03 | 1989-03-03 | Magneto-optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4992189A JPH02230532A (en) | 1989-03-03 | 1989-03-03 | Magneto-optical recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02230532A true JPH02230532A (en) | 1990-09-12 |
Family
ID=12844480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4992189A Pending JPH02230532A (en) | 1989-03-03 | 1989-03-03 | Magneto-optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02230532A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7142384B2 (en) | 2001-06-28 | 2006-11-28 | Fujitsu Limited | Magnetic recording medium having magnetic decoupling ability |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63239637A (en) * | 1987-03-27 | 1988-10-05 | Canon Inc | Magneto-optical recording medium and its recording method |
| JPS6450257A (en) * | 1987-08-21 | 1989-02-27 | Nikon Corp | Multi-layered magneto-optical recording medium controlled in exchange bonding strength |
| JPH01220239A (en) * | 1988-02-29 | 1989-09-01 | Kyocera Corp | Magneto-optical recording element |
-
1989
- 1989-03-03 JP JP4992189A patent/JPH02230532A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63239637A (en) * | 1987-03-27 | 1988-10-05 | Canon Inc | Magneto-optical recording medium and its recording method |
| JPS6450257A (en) * | 1987-08-21 | 1989-02-27 | Nikon Corp | Multi-layered magneto-optical recording medium controlled in exchange bonding strength |
| JPH01220239A (en) * | 1988-02-29 | 1989-09-01 | Kyocera Corp | Magneto-optical recording element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7142384B2 (en) | 2001-06-28 | 2006-11-28 | Fujitsu Limited | Magnetic recording medium having magnetic decoupling ability |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6066349A (en) | Photothermomagnetic recording medium and its production | |
| JPH0690976B2 (en) | Magneto-optical recording medium | |
| US4837118A (en) | Magneto-optical recording medium | |
| JPH02230532A (en) | Magneto-optical recording medium | |
| JP3150401B2 (en) | Perpendicular magnetization film and magnetic recording medium | |
| JP3068796B2 (en) | Magneto-optical recording film having double layer structure and magneto-optical disk employing the same | |
| US5529854A (en) | Magneto-optic recording systems | |
| US5106704A (en) | Over write capable magnetooptical recording medium | |
| JP3208275B2 (en) | Magneto-optical recording medium | |
| JPH04117645A (en) | Magneto-optical recording medium | |
| JPH0384755A (en) | Magneto-optical recording medium | |
| JP3171453B2 (en) | Magnetoresistance effect element | |
| US6146752A (en) | Magneto-optical recording medium | |
| JPS63269354A (en) | magneto-optical recording medium | |
| JP2536639B2 (en) | Exchange coupled multilayer magneto-optical recording medium | |
| JPH03157838A (en) | magneto-optical recording medium | |
| JPH01140446A (en) | Magneto-optical memory medium | |
| JP2536202B2 (en) | Method for manufacturing magneto-optical recording medium | |
| JPS59217249A (en) | Photomagnetic recording medium | |
| JPH0469830A (en) | Production of magneto-optical recording medium | |
| JPH03120643A (en) | Magneto-optical recording medium | |
| JP2767917B2 (en) | Method for manufacturing exchange-coupled multilayer magneto-optical recording medium | |
| JPH0714227A (en) | Magneto-optical recording medium | |
| JPS62232734A (en) | Production of photomagnetic recording medium | |
| JPS61239421A (en) | Composite magnetic recording medium |