JPH02232106A - Polycrystalline diamond for tools - Google Patents

Polycrystalline diamond for tools

Info

Publication number
JPH02232106A
JPH02232106A JP5148589A JP5148589A JPH02232106A JP H02232106 A JPH02232106 A JP H02232106A JP 5148589 A JP5148589 A JP 5148589A JP 5148589 A JP5148589 A JP 5148589A JP H02232106 A JPH02232106 A JP H02232106A
Authority
JP
Japan
Prior art keywords
diamond
tools
polycrystalline diamond
thickness
grain size
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5148589A
Other languages
Japanese (ja)
Other versions
JP2710287B2 (en
Inventor
Tsutomu Nakamura
勉 中村
Keiichiro Tanabe
敬一朗 田辺
Takahiro Imai
貴浩 今井
Akihiko Ikegaya
池ケ谷 明彦
Naoharu Fujimori
直治 藤森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP1051485A priority Critical patent/JP2710287B2/en
Publication of JPH02232106A publication Critical patent/JPH02232106A/en
Application granted granted Critical
Publication of JP2710287B2 publication Critical patent/JP2710287B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Cutting Tools, Boring Holders, And Turrets (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分舒〕 本発明は、切削工具や耐摩工具等として用いるに好適な
、強度、耐溶着性、耐熱性及び耐摩耗性が著しく改善さ
れた工具用多結晶ダイヤモンドに関する。
[Detailed Description of the Invention] [Industrial Application] The present invention provides a tool for use as a cutting tool, a wear-resistant tool, etc., which has significantly improved strength, welding resistance, heat resistance, and wear resistance. Regarding polycrystalline diamond.

〔従来の技術〕[Conventional technology]

工具用ダイヤモンドとしては、ダイヤモンドの微粉末を
超高圧下で焼結してなるダイヤモンド焼結体が非鉄金属
の切削工具、ドリルビット、線引ダイス等に使用されて
いる。
As diamond for tools, diamond sintered bodies made by sintering fine diamond powder under ultra-high pressure are used in nonferrous metal cutting tools, drill bits, wire drawing dies, and the like.

例えば、特公昭52 − 12126号公報には、ダイ
ヤモンド粉末をWe−Co系超硬合金の粉末成形体又は
焼結体に接せしめて焼結し、COの一部をダイヤモンド
粉末中に結合金属として侵入させることによって、約1
0〜15体積%のCOを含有するダイヤモンド焼結体を
製造する技術が開示されている。
For example, Japanese Patent Publication No. 52-12126 discloses that diamond powder is brought into contact with a powder compact or sintered body of We-Co based cemented carbide and sintered, and a portion of CO is contained in the diamond powder as a binder metal. By infiltrating approximately 1
A technique for manufacturing a diamond sintered body containing 0 to 15% by volume of CO is disclosed.

このダイヤモンド焼結体は非鉄金属の切削工具用として
は実用的性能を有するが、耐熱性に劣る欠点があった。
Although this diamond sintered body has practical performance as a cutting tool for non-ferrous metals, it has a drawback of poor heat resistance.

例えば700C以上に加熱すると耐摩耗性や強度の低下
がみられ、900σ以上の温度では焼結体が破壊してし
まう。かかる耐熱性における欠点は、ダイヤモンド粒子
と結合材であるCOとの界面においてダイヤモンドの黒
鉛化が生じること、及び両者の加熱時における熱膨張率
の差に基ずく熱応力によるものと考えられる。
For example, if heated to 700C or higher, the wear resistance and strength will decrease, and if the temperature is 900σ or higher, the sintered body will break. This defect in heat resistance is thought to be due to graphitization of diamond occurring at the interface between diamond particles and CO, which is a binder, and thermal stress based on the difference in thermal expansion coefficients when the two are heated.

上記のダイヤモンド焼結体の耐熱性を改善する試みとし
て、例えば特開昭53 − 114589号公報には焼
結体を酸処理して結合金属COを除去することが提案さ
れている。しかし、この方法では、除去されたCo部分
が空孔となるため、耐熱性は向上しても強度が低下して
しまうという欠点があった。
As an attempt to improve the heat resistance of the above-mentioned diamond sintered body, for example, Japanese Patent Application Laid-Open No. 114589/1989 proposes that the sintered body be treated with an acid to remove the bonding metal CO. However, this method has the disadvantage that the removed Co parts become pores, so even though the heat resistance is improved, the strength is reduced.

一方、最近では化学的に気相から合成する方法によって
もダイヤモンドの合成が可能となっている。この化学的
気相合成法(cvn法)として、水素と炭化水素の原料
ガスを励起分解する各種の提案がある。例えば、特開昭
58 − 91100号公報には上記原料ガスを100
0 C’以上に加熱した熱電子放射材によって予備加熱
した後、加熱した基材表?に導入して炭化水素の熱分解
によりダイヤモンドを析出する方法が;又特開昭58 
− 110494号公報には水素ガスをマイクロ波無電
極放電中を通過させた後、炭化水素ガスと混合して同じ
ようにダイヤモンドを析出させる方法が;更に特開昭5
9−30398号公報には水素ガスと不活性ガスとの混
合ガスにマイクロ波を導入してプラズマを発生させ、こ
の中に基材を設置して300〜1300C’に加熱し、
炭化水素を分解させてダイヤモンドを析出させる方法が
夫々記載されている。又、特開昭61 − 15889
9号公報には、原料ガスとして炭化水素に酸素含有ガス
を混合することが開示されている。
On the other hand, recently it has become possible to synthesize diamond using a chemical method of synthesis from the gas phase. As this chemical vapor phase synthesis method (CVN method), there are various proposals for exciting and decomposing raw material gases of hydrogen and hydrocarbons. For example, in Japanese Patent Application Laid-Open No. 58-91100, the above raw material gas is
Table of substrates heated after preheating with a thermionic emitter heated to 0 C' or higher? There is a method of depositing diamond by thermal decomposition of hydrocarbons;
- Publication No. 110494 describes a method in which diamond is precipitated in the same way by passing hydrogen gas through a microwave electrodeless discharge and then mixing it with hydrocarbon gas;
No. 9-30398 discloses that a microwave is introduced into a mixed gas of hydrogen gas and an inert gas to generate plasma, and a base material is placed in the plasma and heated to 300 to 1300 C'.
Methods of decomposing hydrocarbons and precipitating diamonds have been described. Also, JP-A-61-15889
No. 9 discloses mixing an oxygen-containing gas with a hydrocarbon as a raw material gas.

これらの■VD法を応用することによって、基材上に多
結晶ダイヤモンドをコーティングした工具も提供されて
いる。しかし、ダイヤモンドの膜厚が薄く、且つダイヤ
モンドの基材との密着強度が不充分なため、工具として
充分な性能が得られていない。
By applying these VD methods, tools in which polycrystalline diamond is coated on a base material are also provided. However, because the diamond film thickness is thin and the adhesion strength of the diamond to the base material is insufficient, sufficient performance as a tool cannot be obtained.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

本発明者等は、かかる従来のダイヤモンド工具の欠点に
検討を加え、先に特願昭63 − 34033号及び特
願昭63 − 34034号によって、CvD法を応用
して基材上に形成した多結晶ダイヤモンドを化学的処理
又は機械的手段により基材から分離させ、焼入鋼や超硬
合金からなる支持部材にろう付けすることにより、従来
のダイヤモンド工具に比べ強度及び耐摩耗性に劣ること
なく、シかも遥かに耐熱性に優れたダイヤモンド工具を
提案した。
The present inventors investigated the shortcomings of such conventional diamond tools, and previously disclosed in Japanese Patent Application No. 63-34033 and No. 63-34034 a diamond tool formed on a base material by applying the CvD method. By separating crystalline diamond from the base material by chemical treatment or mechanical means and brazing it to a support member made of hardened steel or cemented carbide, it is possible to create a diamond tool with strength and wear resistance comparable to that of conventional diamond tools. proposed a diamond tool with far superior heat resistance.

しかし、上記提案によるダイヤモンド工具の性能評価を
進めた結果、工具素材としての多結晶ダイヤモンドの種
類により、工具性能、特に耐欠損性と耐摩耗性に差異が
あることを見い出し、本発明に至ったものである。
However, as a result of evaluating the performance of diamond tools based on the above proposal, we discovered that there are differences in tool performance, particularly chipping resistance and wear resistance, depending on the type of polycrystalline diamond used as the tool material, leading to the present invention. It is something.

即ち、本発明は強度、耐溶着性、耐熱性及び耐摩耗性を
改善し、特に耐欠損性と耐摩耗性に優れた工具用多結晶
ダイヤモンドを提供することを目的とする。
That is, an object of the present invention is to provide a polycrystalline diamond for tools with improved strength, adhesion resistance, heat resistance, and wear resistance, and particularly excellent fracture resistance and wear resistance.

(課題を解決するための手段〕 上記の目的を達成するため、本発明の工具用多結晶ダイ
ヤモンドは、厚さが50μm以上、平均結晶粒径が50
μm以下であって、純度の指標としてラマン分光分析に
よるダイヤモンド炭素(埒と非ダイヤモンド炭素(″i
′)のピーク比(Y/X)が0.2以下、好ましくはO
,OS以下であることを特徴とする。
(Means for Solving the Problems) In order to achieve the above object, the polycrystalline diamond for tools of the present invention has a thickness of 50 μm or more and an average crystal grain size of 50 μm or more.
μm or less, diamond carbon (diamond carbon) and non-diamond carbon (“i”) by Raman spectroscopy as an indicator of purity
') peak ratio (Y/X) is 0.2 or less, preferably O
, OS or lower.

多結晶ダイヤモンドの純度の指標としては、ラマン分光
分析のピーク比以外にも、比抵抗、光透過率、誘電損失
等を用いることができ、その場合には比抵抗が10 Ω
・備以上であること、波長600nmでの可視光透過率
が10%以上であること、100 KHzでの誘電損失
が0.2以下であることが夫夫必要な条件となるが、こ
れらはそれぞれ直接対応する関係にあるとは云えない。
In addition to the peak ratio of Raman spectroscopy, specific resistance, optical transmittance, dielectric loss, etc. can be used as an indicator of the purity of polycrystalline diamond, and in that case, the specific resistance is 10 Ω.
・The necessary conditions are that the visible light transmittance at a wavelength of 600 nm is at least 10%, and the dielectric loss at 100 KHz is at least 0.2. It cannot be said that there is a direct correspondence relationship.

〔作用〕[Effect]

多結晶ダイヤモンドが高純度であることは特に重要な条
件であり、純度の指標としては前記の如くラマン分光分
析のピーク比、比抵抗、光透過率及び誘電損失のいずれ
かを用いる。これらの純度の指標において、ピーク比(
Y/X)が0.2を超える場合、比抵抗が107Ω・c
mより小さい場合、波長600 umでの可視光透過率
が10%の範囲より小さい場合、又はioOKHzでの
誘電損失が0.2より大きい場合には、多くの非ダイヤ
モンド炭素やその他の不純物が含有され純度が低下した
と判断することができ、このようなダイヤモンドは工具
として使用する際に大きな欠陥が生じやすくなると共に
、粒子の微小破砕や脱落による摩耗が顕著となる。これ
は、非ダイヤモンド炭素がダイヤモンド粒子間に存在す
るために粒子間結合強度が低下すること、並びにこのよ
うな条件下で析出したダイヤモンド粒子内には欠陥が多
く存在するため粒子自体の強度も小さいこと等によるも
のと推定される。
It is a particularly important condition that polycrystalline diamond has high purity, and as an indicator of purity, one of the peak ratio of Raman spectroscopy, specific resistance, light transmittance, and dielectric loss is used as described above. In these purity indicators, the peak ratio (
When Y/X) exceeds 0.2, the specific resistance is 107Ω・c
m, if the visible light transmittance at wavelength 600 um is less than 10% range, or if the dielectric loss at ioOKHz is greater than 0.2, it contains a large amount of non-diamond carbon and other impurities. When used as a tool, such diamonds tend to have large defects, and wear due to micro-fractures and falling off of particles becomes noticeable. This is because non-diamond carbon exists between diamond particles, which reduces the bonding strength between the particles, and because there are many defects in the diamond particles precipitated under these conditions, the strength of the particles themselves is also low. It is presumed that this is due to the following reasons.

かかる条件を満たす多結晶ダイヤモンドは、前記したC
VD法に基ずいて合成条件を選定することによって製造
できるが、特に原料ガスの励起にプラズマを用いること
、及び原料ガスとして炭化水素と水素の外に酸素や水蒸
気のような酸素含有ガスを使用することが有効である。
Polycrystalline diamond that satisfies these conditions has the above-mentioned C
It can be produced by selecting synthesis conditions based on the VD method, but in particular, plasma is used to excite the raw material gas, and oxygen-containing gases such as oxygen and water vapor are used in addition to hydrocarbons and hydrogen as the raw material gas. It is effective to do so.

尚、非ダイヤモンド炭素以外の不純物も極力混入しない
ように合成条件を選定することが好ましい。
In addition, it is preferable to select synthesis conditions so as to avoid mixing of impurities other than non-diamond carbon as much as possible.

又、多結晶ダイヤモンドの厚さを50μm以上とするの
は、切削工具とした場合の寿命時の逃げ面摩耗幅が50
μm以上となることが多いこと、並びに50 /Jmよ
り薄いと強度が低下して破損しやすくなるためである。
In addition, the reason why the thickness of polycrystalline diamond is 50 μm or more is that when used as a cutting tool, the flank wear width during the life of the cutting tool is 50 μm or more.
This is because the thickness is often more than μm, and if it is thinner than 50 μm/Jm, the strength decreases and it becomes easy to break.

更に耐摩耗性を要求する場合には厚さを0.3〜3.0
wKとすることが好ましい。厚さを厚くすることによっ
て放熱特性が良好となり、工具使用時の刃先温度の上昇
が抑制されるためであるO 更に、平均結晶粒径を50μm以下とするのは耐欠損性
を向上させるためであり、1μm〜10μmの範囲が一
層好ましい。この範囲より大きいと耐欠損性が徐々に低
下し、又この範囲よりも小さいと耐摩耗性が低下するか
らである。このような結晶粒径の制御は、本発明者等に
よる特願昭63 − 1 39143号及び特願昭63
 − 148631号等に記載の方法によって行なうこ
とが出来る。
If more wear resistance is required, the thickness should be increased from 0.3 to 3.0.
It is preferable to set it to wK. This is because increasing the thickness improves heat dissipation characteristics and suppresses the rise in temperature at the cutting edge during tool use.Furthermore, the reason why the average grain size is 50 μm or less is to improve fracture resistance. The range of 1 μm to 10 μm is more preferable. This is because if it is larger than this range, fracture resistance gradually decreases, and if it is smaller than this range, wear resistance decreases. Such control of crystal grain size is disclosed in Japanese Patent Application No. 1983-139143 and Japanese Patent Application No. 1983 by the present inventors.
- It can be carried out by the method described in No. 148631 etc.

尚、CvD法等により合成された本発明の多結晶ダイヤ
モンドは、前記特願昭63 − 34033号及び特願
昭63 − 34034号と同様に、基材から分離して
支持部材にろう付けして工具とするか、或いは厚いもの
はそのま\単体工具として使用する。
Incidentally, the polycrystalline diamond of the present invention synthesized by the CvD method or the like is separated from the base material and brazed to a support member, as in the above-mentioned Japanese Patent Applications No. 63-34033 and No. 63-34034. Use it as a tool, or if it is thick, use it as is/as a single tool.

〔実施例〕〔Example〕

実施例1 マイクロ波プラズマCVD法により、原料ガスとしてH
  250 cc/minS(!H  5 cc/mi
ns及びAr 80cc/minを用い、圧力200 
torrでMo基材上に多結晶ダイヤモンドを20時間
で約0.5811の厚さに形成した。この多結晶ダイヤ
モンド(A)の成長上面での平均結晶粒径は約40μm
であった。次に、原料ガスに更に1.0容量%の水蒸気
を添加した他は上記と同じ条件により、20時間で約0
.4fiの厚さに多結晶ダイヤモンド(B)を形成した
。この平均結晶粒径は約25μmであった。
Example 1 H was used as a raw material gas by microwave plasma CVD method.
250 cc/minS (!H 5 cc/min
Using ns and Ar 80cc/min, pressure 200
Polycrystalline diamond was formed to a thickness of about 0.5811 mm on a Mo substrate in 20 hours using torr. The average crystal grain size of this polycrystalline diamond (A) on the growth top surface is approximately 40 μm.
Met. Next, under the same conditions as above except that 1.0% by volume of water vapor was further added to the raw material gas, approximately 0%
.. Polycrystalline diamond (B) was formed to a thickness of 4fi. The average crystal grain size was about 25 μm.

その後、熱王水処理によりMo基材を溶解除去して多結
晶ダイヤモンドを回収したところ、(A)は黒色不透明
であったが、(B)は白色透明を呈していた。又、比重
は共に3.52であったが、ラマン分光分析の結果は第
1図に示す通りであって、1800cm” 10 0 
0 cm−’の間のバックグランドから測定した136
0〜1580cm  の非ダイヤモンド炭素のピーク(
至)と、1333cm−’のピーク周辺部をバックグラ
ンドとして測定したダイヤモンド炭素のビーク00との
ピーク比(y/x)は(A)が0.32であるのに対し
(B)は0.05であった。又、比抵抗は(A) 3 
X 10  Ωmcmに対して(B) 7 X 1.0
  Ω@cm,波長600 nmでの可視光透過率(試
料厚さ50μm)が(A)3%に対して(B)60%、
及び100 KHzでの誘電損失が(A) 0. 95
に対して(B)0.03であって、明らかに(B)の方
が非ダイヤモンド炭素の含有量が少なく高純度であるこ
とが判った。
Thereafter, when the Mo base material was dissolved and removed by hot aqua regia treatment and the polycrystalline diamond was recovered, (A) was black and opaque, but (B) was white and transparent. In addition, the specific gravity was 3.52 in both cases, but the results of Raman spectroscopic analysis were as shown in Figure 1, and 1800 cm" 10 0
136 measured from background between 0 cm-'
Non-diamond carbon peak from 0 to 1580 cm (
The peak ratio (y/x) between peak 00 of diamond carbon measured with the periphery of the peak at 1333 cm-' as the background is 0.32 for (A), while 0.32 for (B). It was 05. Also, the specific resistance is (A) 3
(B) 7 X 1.0 for X 10 Ωmcm
Ω@cm, visible light transmittance at wavelength 600 nm (sample thickness 50 μm) is (A) 3% and (B) 60%,
and the dielectric loss at 100 KHz is (A) 0. 95
(B) was 0.03, and it was clearly found that (B) had a lower content of non-diamond carbon and had higher purity.

次に、工具性能を評価するため、各多結晶ダイヤモンド
を超硬合金の合金にろう付けし、切削チップを作製した
。比較材として、結合材Coを10容量%含有する平均
粒径10μmの超高圧焼結ダイヤモンドを用いて、同様
に切削チップを作製した。
Next, in order to evaluate tool performance, each polycrystalline diamond was brazed to a cemented carbide alloy to create a cutting tip. As a comparison material, a cutting tip was produced in the same manner using ultra-high pressure sintered diamond containing 10% by volume of Co as a binder and having an average grain size of 10 μm.

被削材として外周面に軸方向に伸びる4本の溝が形成さ
れたA390合金(Al−17SL)九棒を用い、切削
速度300 m/min ,切り込み0.2篩、送り0
. 11111/rev.の条件で乾式切削し、工具性
能を評価した。
Nine bars of A390 alloy (Al-17SL) with four grooves extending in the axial direction on the outer circumferential surface were used as the work material, cutting speed was 300 m/min, depth of cut was 0.2 sieve, and feed rate was 0.
.. 11111/rev. The tool performance was evaluated by dry cutting under the following conditions.

その結果、(A)は40分切削時点で欠損したが、(B
)は欠損せず、90分切削時での平均摩耗幅は0.04
鶴であった。比較材も欠損しなかったが、90分切削時
での平均摩耗幅が0,O’lllfiであった。
As a result, (A) was damaged after 40 minutes of cutting, but (B)
) is not chipped, and the average wear width after 90 minutes of cutting is 0.04.
It was a crane. Although the comparative material did not suffer from any chipping, the average wear width after 90 minutes of cutting was 0.0'lllfi.

実施例2 熱電子放射材として直径0.5闘及び長さ20fiの直
線状タングステンフィラメントを用い、水素、炭素源及
び水蒸気からなる原料ガスを分解励起して、81基材上
に第1表に示す条件で多結晶ダイヤモンドを10時間形
成させた。
Example 2 Using a linear tungsten filament with a diameter of 0.5 mm and a length of 20 mm as the thermionic emitting material, a raw material gas consisting of hydrogen, a carbon source, and water vapor was decomposed and excited, and the materials shown in Table 1 were deposited on an 81 base material. Polycrystalline diamond was formed under the conditions shown for 10 hours.

第  1  表 得られた各多結晶ダイヤモンド(0)〜(H)を酸処理
して81基材から分離回収したところ、(D)と(E)
は黒色不透明であったが、他はいずれも白色半透明であ
った。各多結晶ダイヤモンドの膜厚と平均結晶粒径、及
び純度の指標を測定した結果を第2表に示した。
Table 1 When each of the obtained polycrystalline diamonds (0) to (H) was acid-treated and separated and recovered from the 81 base material, (D) and (E) were obtained.
was black and opaque, but all the others were white and translucent. Table 2 shows the results of measuring the film thickness, average crystal grain size, and purity index of each polycrystalline diamond.

第  2  表 (注)ピーク比(X/Y) 、透過率、及び誘電損失の
測定は実施例1と同様である。
Table 2 (Note) Measurements of peak ratio (X/Y), transmittance, and dielectric loss were the same as in Example 1.

各多結晶ダイヤモンド(C)〜(H)を超硬合金の合金
にろう付けして切削チップを作製し、外周面に軸方向に
伸びる4本の溝が形成されたAC8A合金(Aj−12
Si)丸棒を被削材として、切削速度500m/m i
n s切り込み0.2闘、送りO, l s*/rsy
,の条件で乾式で90分間切削した結果を第3表に示し
た。
A cutting tip was prepared by brazing each polycrystalline diamond (C) to (H) to a cemented carbide alloy, and an AC8A alloy (Aj-12
Si) Round bar as work material, cutting speed 500m/m i
n s incision 0.2, feed O, l s*/rsy
Table 3 shows the results of dry cutting for 90 minutes under the following conditions.

第  3  表 本発明による試料(0) 、(F)及び(G)はいずれ
も良好な工具特性を示したが、試料(D>は純度が低い
が比較的微粒であったため欠損が生じなかったものの、
純度が低いので耐摩耗性に劣っており、試料(E)は粒
度が粗く純度も低いため、及び6)は厚さが薄く強度が
低下したため夫々短時間で欠損した。
Table 3 Samples (0), (F), and (G) according to the present invention all showed good tool properties, but sample (D> had low purity but relatively fine particles, so no fracture occurred. of things,
Since the purity was low, the abrasion resistance was poor; sample (E) had a coarse grain size and low purity, and sample 6) had a thin thickness and reduced strength, so they broke off in a short time.

実施例3 CH:H(容量比1 : 100)の混合ガスに更に0
 を0〜20容量%添加した原料ガスを用い、ガス流量
200 cc/min及び圧力180 Torrに調整
し、高周波(13.56 MHz)を900Wの出力で
与えて原料ガスを励起させ、20時間の反応時間でS1
基材上に厚さ0.5〜0.7mの多結晶ダイヤモンドを
形成させた。
Example 3 Adding 0 to the mixed gas of CH:H (volume ratio 1:100)
Using a raw material gas containing 0 to 20% by volume of S1 in reaction time
Polycrystalline diamond with a thickness of 0.5 to 0.7 m was formed on the base material.

得られた多結晶ダイヤモンドの中から平均粒径が7μm
及び厚さ650μmで、各純度の指標に基ずいて純度の
異なるものを選択し、夫々超硬合金のホルダーにろう付
けして刃付け処理を行ない、硬質セラミックスの切削性
能を評価した。切削評価は、アルミナ焼結体丸棒(Ih
r−2000◆一)の外周旋削を、切削速度50 rn
/min 1切り込み0.2fi、送り0. 25 M
yrev.の条件で湿式により15分間行なった。純度
の指標と逃げ面摩耗幅との関係を求め、夫々第2図から
第5図に示した。
Among the obtained polycrystalline diamonds, the average grain size was 7 μm.
and 650 .mu.m in thickness, different purity was selected based on each purity index, and each was brazed to a cemented carbide holder and subjected to a cutting treatment to evaluate the cutting performance of hard ceramics. Cutting evaluation was performed using alumina sintered round bar (Ih
r-2000◆1) outer circumferential turning at a cutting speed of 50 rn
/min 1 cut 0.2fi, feed 0. 25M
yrev. The test was carried out in a wet manner for 15 minutes under the following conditions. The relationship between the purity index and flank wear width was determined and shown in FIGS. 2 to 5, respectively.

この結果から、いずれかの純度の指標が本発明の範囲内
にあるものは、優れた耐摩耗性を有することが判る。
From this result, it can be seen that those having any purity index within the range of the present invention have excellent wear resistance.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、強度、耐溶着性、耐熱性及び耐摩耗性
を改善し、特に耐欠損性と耐摩耗性に優れた工具用多結
晶ダイヤモンドを提供することが出来る。
According to the present invention, it is possible to provide a polycrystalline diamond for tools with improved strength, welding resistance, heat resistance, and wear resistance, and particularly excellent fracture resistance and wear resistance.

従って、この多結晶ダイヤモンドを用いて高性能の工具
を作製でき、特に切削工具、掘削工具、ドレッサー等の
工具用として有効である。
Therefore, high-performance tools can be manufactured using this polycrystalline diamond, and are particularly effective for tools such as cutting tools, excavation tools, and dressers.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は実施例で作成した多結晶ダイヤモンドのラマン
分光分析結果を示すグラフ、第2図から第5図は実施例
3で作成した多結晶ダイヤモンドの逃げ面摩耗幅と、純
度指標としてのラマン分光分析ピーク比、比抵抗、可視
光透過率、誘電損失との関係を夫々示すグラフである。 出願人  住友電気工業株式会社 第1図 第2図 ラマン分光分析ピーク比(Y/x)
Figure 1 is a graph showing the results of Raman spectroscopic analysis of the polycrystalline diamond produced in Example 3, and Figures 2 to 5 are the width of flank wear of the polycrystalline diamond produced in Example 3 and Raman spectroscopy as a purity indicator. 3 is a graph showing the relationship among spectroscopic analysis peak ratio, specific resistance, visible light transmittance, and dielectric loss. Applicant: Sumitomo Electric Industries, Ltd. Figure 1 Figure 2 Raman spectroscopy peak ratio (Y/x)

Claims (4)

【特許請求の範囲】[Claims] (1)厚さが50μm以上、平均結晶粒径が50μm以
下であつて、純度の指標としてラマン分光分析によるダ
イヤモンド炭素(X)と非ダイヤモンド炭素(Y)のピ
ーク比(Y/X)が0.2以下であることを特徴とする
工具用多結晶ダイヤモンド。
(1) The thickness is 50 μm or more, the average crystal grain size is 50 μm or less, and the peak ratio (Y/X) of diamond carbon (X) to non-diamond carbon (Y) is 0 as determined by Raman spectroscopy as an indicator of purity. A polycrystalline diamond for use in tools, characterized in that it has a particle diameter of .2 or less.
(2)厚さが50μm以上、平均結晶粒径が50μm以
下であつて、比抵抗が10Ω・cm以上であることを特
徴とする工具用多結晶ダイヤモンド。
(2) A polycrystalline diamond for tools, which has a thickness of 50 μm or more, an average crystal grain size of 50 μm or less, and a resistivity of 10 Ω·cm or more.
(3)厚さが50μm以上、平均結晶粒径が50μm以
下であつて、波長600nmでの可視光透過率が10%
以上であることを特徴とする工具用多結晶ダイヤモンド
(3) The thickness is 50 μm or more, the average crystal grain size is 50 μm or less, and the visible light transmittance at a wavelength of 600 nm is 10%.
A polycrystalline diamond for tools characterized by the above.
(4)厚さが50μm以上、平均結晶粒径が50μm以
下であつて、100KHzでの誘電損失が0.2以下で
あることを特徴とする工具用多結晶ダイヤモンド。
(4) A polycrystalline diamond for tools, which has a thickness of 50 μm or more, an average crystal grain size of 50 μm or less, and a dielectric loss of 0.2 or less at 100 KHz.
JP1051485A 1989-03-03 1989-03-03 Polycrystalline diamond for tools Expired - Lifetime JP2710287B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1051485A JP2710287B2 (en) 1989-03-03 1989-03-03 Polycrystalline diamond for tools

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1051485A JP2710287B2 (en) 1989-03-03 1989-03-03 Polycrystalline diamond for tools

Publications (2)

Publication Number Publication Date
JPH02232106A true JPH02232106A (en) 1990-09-14
JP2710287B2 JP2710287B2 (en) 1998-02-10

Family

ID=12888263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1051485A Expired - Lifetime JP2710287B2 (en) 1989-03-03 1989-03-03 Polycrystalline diamond for tools

Country Status (1)

Country Link
JP (1) JP2710287B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01296803A (en) * 1988-05-25 1989-11-30 Matsushita Electric Ind Co Ltd Reference voltage circuit
JPH04354873A (en) * 1991-05-30 1992-12-09 Kyocera Corp Hard carbon film
EP1260616A4 (en) * 2000-02-23 2003-03-26 Hamamatsu Photonics Kk Polycrystalline diamond thin film, photocathode and electron tube using it
JP2009209028A (en) * 2008-02-08 2009-09-17 Sumitomo Electric Ind Ltd Process of manufacturing diamond polycrystal substrate and diamond polycrystal substrate
JPWO2021054019A1 (en) * 2019-09-18 2021-03-25
US11072008B2 (en) 2015-10-30 2021-07-27 Sumitomo Electric Industries, Ltd. Wear-resistant tool
US12611719B2 (en) 2019-09-18 2026-04-28 Sumitomo Electric Hardmetal Corp. Diamond cutting tool

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62107068A (en) * 1985-10-31 1987-05-18 Kyocera Corp Diamond coated cutting tool
JPS6333570A (en) * 1986-07-23 1988-02-13 Kyocera Corp Diamond coated cutting tool
JPS6355197A (en) * 1986-08-25 1988-03-09 Toshiba Corp Production of diamond having high purity
JPS6452699A (en) * 1986-07-23 1989-02-28 Sumitomo Electric Industries Vapor phase-synthesized diamond and synthesis thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62107068A (en) * 1985-10-31 1987-05-18 Kyocera Corp Diamond coated cutting tool
JPS6333570A (en) * 1986-07-23 1988-02-13 Kyocera Corp Diamond coated cutting tool
JPS6452699A (en) * 1986-07-23 1989-02-28 Sumitomo Electric Industries Vapor phase-synthesized diamond and synthesis thereof
JPS6355197A (en) * 1986-08-25 1988-03-09 Toshiba Corp Production of diamond having high purity

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01296803A (en) * 1988-05-25 1989-11-30 Matsushita Electric Ind Co Ltd Reference voltage circuit
JPH04354873A (en) * 1991-05-30 1992-12-09 Kyocera Corp Hard carbon film
EP1260616A4 (en) * 2000-02-23 2003-03-26 Hamamatsu Photonics Kk Polycrystalline diamond thin film, photocathode and electron tube using it
US7045957B2 (en) 2000-02-23 2006-05-16 Hamamatsu Photonics K.K. Polycrystal diamond thin film and photocathode and electron tube using the same
JP2009209028A (en) * 2008-02-08 2009-09-17 Sumitomo Electric Ind Ltd Process of manufacturing diamond polycrystal substrate and diamond polycrystal substrate
US11072008B2 (en) 2015-10-30 2021-07-27 Sumitomo Electric Industries, Ltd. Wear-resistant tool
JPWO2021054019A1 (en) * 2019-09-18 2021-03-25
WO2021054019A1 (en) * 2019-09-18 2021-03-25 住友電工ハードメタル株式会社 Diamond cutting tool
CN114430704A (en) * 2019-09-18 2022-05-03 住友电工硬质合金株式会社 Diamond cutting tool
TWI879804B (en) * 2019-09-18 2025-04-11 日商住友電工硬質合金股份有限公司 Diamond cutting tools
US12611719B2 (en) 2019-09-18 2026-04-28 Sumitomo Electric Hardmetal Corp. Diamond cutting tool

Also Published As

Publication number Publication date
JP2710287B2 (en) 1998-02-10

Similar Documents

Publication Publication Date Title
CN101321714B (en) Diamond sintered body
EP0365218A1 (en) A polycrystal diamond fluted tool and a process for the production of the same
US20090205260A1 (en) Coated abrasives
JPH06508656A (en) Multilayer metal-coated diamond abrasive with electroless deposited metal
KR20090097867A (en) Polishing compact with improved machinability
KR20050072753A (en) Method for producing a sintered, supported polycrystalline diamond compact
JP4790630B2 (en) Coated abrasive
JP2949863B2 (en) High toughness polycrystalline diamond and method for producing the same
JPH03197677A (en) Diamond-coated tool and its production
JPH02232106A (en) Polycrystalline diamond for tools
JPH0819522B2 (en) Diamond-coated sintered alloy with excellent adhesion and method for producing the same
JPS63100182A (en) Cutting tool tip made of diamond-coated tungsten carbide-based sintered hard alloy
JP3472630B2 (en) Cubic boron nitride sintered body for cutting tools and cutting tools
JP2557560B2 (en) Polycrystalline diamond cutting tool and manufacturing method thereof
JPH04261703A (en) polycrystalline diamond cutting tools
JP2792136B2 (en) High toughness polycrystalline diamond and method for producing the same
JP2571821B2 (en) Method for producing granular polycrystalline diamond film
JP3235206B2 (en) Diamond cutting tool and manufacturing method thereof
JP2001322067A (en) Method for producing metal carbide coated superabrasive grains, metal carbide coated superabrasive grains and superabrasive tool
JPH03281106A (en) Polycrystaline diamond tool and manufacture thereof
JPH03103397A (en) High-strength diamond
JPH05155691A (en) High strength polycrystalline diamond
KR100586852B1 (en) Efficiency Improvement Method of Reduction-Carbonation Process of Tungsten Oxide
JPS59166671A (en) Surface-coated tool member excellent in wear resistance
JPH0523903A (en) Diamond coating cutting tool

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071024

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081024

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091024

Year of fee payment: 12

EXPY Cancellation because of completion of term
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091024

Year of fee payment: 12