JPH0223616A - Dry etching device and manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a stable high etching rate by mounting the part of TiN into a chamber in a dry etching device in which a reaction gas is introduced into the chamber and changed into plasma by applying high frequency. CONSTITUTION:A gas is introduced and the part 9 of TiN is set up into a chamber generating plasma by applying high frequency in a dry etching device, thus operating TiN as a catalyst, then efficiently producing the radicals of F particularly from the reaction gas containing F. Since the temperature of plasma is also elevated and a depositing polymer is difficult to be attached normally to an article to be etched again at that time, stable etching having high efficiency is enabled. A resist 1 is patterned onto single crystal silicon 2 as a material to be etched on a wafer. CBrF3 is introduced from an introducing port 4 as the reaction gas at 100mTorr, and 13.56MHz as high frequency is applied at 100W and the single crystal silicon 2 is etched. A polymer film is generated extremely slightly at that time, and the etching rate of 5000Angstrom /min is acquired. The resist is removed. CBrF3 is not limited as the reaction gas particularly, and any reaction gas having F can etch the material to be etched similarly.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a structure of a dry etching apparatus and a method of manufacturing a semiconductor device, particularly an etching method.

[Prior Art] Conventional dry etching equipment and methods for manufacturing semiconductor devices have been based on the structure and method shown in FIGS. 3 and 4. For example, CBrF3 is 400mT o r r'''
They were also etching C″Si.

[Problem to be solved by the invention]

However, conventional techniques have had problems in that etching stops midway due to the generation of polymer, the tapered shape is non-uniform within the wafer, and etching itself is unstable.

SUMMARY OF THE INVENTION The present invention is intended to solve these problems, and its purpose is to provide an etching apparatus and an etching method that are stable and provide a high etching rate.

[Means to solve the problem]

The dry etching apparatus of the present invention is a dry etching apparatus that introduces a reactive gas into a chamber and converts it into plasma by applying high frequency.
It is characterized by having the following products.

Further, the method for manufacturing a semiconductor device of the present invention is characterized in that an edging workpiece is processed in the dry etching apparatus.

[For production]

In a dry etching device, by having a TiN member in the chamber where gas is introduced and plasma is generated by applying high frequency, TiN acts as a catalyst, and in particular, F radicals can be efficiently produced from a reaction gas containing F. can. At this time, the plasma temperature also rises, making it difficult for the normally deposited polymer to re-adhere to the etching solution, making it possible to perform highly efficient and stable etching.

〔Example〕

FIGS. 1(a) to 1(d) show the structure of a dry etching apparatus according to an embodiment of the present invention. Anode 1, cathode 2, chamber 3, gas inlet 4, exhaust port 5, RF unit 6, wafer 7, TiN ring 8, TiN sputtered film 9, magnet 1o, magnetron 116. FIG. 1 is a process sectional view showing an example of the present invention.

A detailed explanation will be given below based on examples.

For example, in an etching device having a structure called RIE in boat fishing, as shown in FIG. 1(a), the second
Perform etching as shown in the figure.

First, as shown in FIG. 2(a), a resist 1 is patterned onto m-crystal silicon 2, which is a wafer edging material.

Then, as shown in FIG. 2(b), CB is etched using the etching apparatus shown in FIG. 1(a).
rFx is introduced as a reactive gas through introduction D4, and a high frequency of, for example, 13.56 MHz is applied at 100 W to etch the single crystal silicon 2. At this time, the formation of a polymer film was negligible, and the etching rate was 5000 A/mi.
n was obtained.

Then, as shown in FIG. 2(C), the resist is removed.

Although a resist is used as the etching mask here, the etching mask is not limited to this, and for example, a silicon oxide film or the like may be used. Further, although single crystal silicon was used as the etching material, it is not related to polycrystal, shrimp, single crystal, and may also be used for other silicon nitride films.

Furthermore, the reactive gas is not limited to CB r F 3 , and any reactive gas containing F can be etched in the same way.

In addition, as the structure of the etching device, the structure shown in Fig. 1 (b
) to (d) were also confirmed, and it does not particularly depend on the etching method.

〔Effect of the invention〕

As mentioned above, by having a TiN member in the etching chamber, the etching rate is improved by about 1-40%, and in particular, it is possible to improve the etching rate by about 1 to 40%. This has the effect of avoiding such problems and enabling stable production.

[Brief explanation of the drawing]

FIGS. 1(a) to 1('d) are cross-sectional views showing the structure of the dry etching apparatus of the present invention. FIGS. 2(a) to 2(c) are process cross-sectional views showing the method for manufacturing a semiconductor device of the present invention. FIG. 3 is a sectional view showing the structure of a conventional dry etching apparatus. FIGS. 4(a) to 4(c) are process cross-sectional views showing a conventional method for manufacturing a semiconductor device. ■ ・ ・ 2 ・ 3 ・ 4 ・ 5 ・ 6 ・ 7 ・ 8 ・ 9 ・ 10 ・ 11 ・ 12 ・ 13 ・ Anode Cathode Chamber Gas inlet Exhaust port RF unit 1 ~ Wafer T i N member T i N sputtered film magnet Magnetron resist single crystal silicon/polymer/quartz”

Claims (2)

[Claims] (1) A dry etching apparatus that introduces a reactive gas into a chamber and converts it into plasma by applying high frequency, the dry etching apparatus having a TiN component in the chamber. (2) In the dry etching apparatus according to claim 1,
A method for manufacturing a semiconductor device, characterized by processing a material to be etched.