JPH02237025A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH02237025A JPH02237025A JP5703489A JP5703489A JPH02237025A JP H02237025 A JPH02237025 A JP H02237025A JP 5703489 A JP5703489 A JP 5703489A JP 5703489 A JP5703489 A JP 5703489A JP H02237025 A JPH02237025 A JP H02237025A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gas
- thin film
- temperature
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000007789 gas Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000003870 refractory metal Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 41
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052721 tungsten Inorganic materials 0.000 abstract description 17
- 239000010937 tungsten Substances 0.000 abstract description 17
- 239000010409 thin film Substances 0.000 abstract description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 238000002844 melting Methods 0.000 abstract description 10
- 230000008018 melting Effects 0.000 abstract description 6
- 238000004140 cleaning Methods 0.000 abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052786 argon Inorganic materials 0.000 abstract description 2
- 239000012159 carrier gas Substances 0.000 abstract description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 1
- 238000006467 substitution reaction Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000010924 continuous production Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000005871 repellent Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、多結晶シリコン上にオーミックな接触を示す
高融点金属を成長する半導体製造装置の製造方法に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a semiconductor manufacturing apparatus for growing a high melting point metal exhibiting ohmic contact on polycrystalline silicon.
従来の技術
近年，ＭＯＳ型半導体装置等の高集積化・微細化が発達
するに従い、その多層配線構造の必要性からタングステ
ンボリサイド等の高融点金属を用いた配線が多用される
ようになっている。2. Description of the Related Art In recent years, as MOS semiconductor devices have become more highly integrated and miniaturized, wiring made of high-melting point metals such as tungsten bolicide has come into widespread use due to the need for multilayer wiring structures. There is.
以下に従来のタングステンボリサイド形成方法について
説明する。A conventional method for forming tungsten silicide will be described below.
第２図は従来の方法によるタングステンボリサイドの形
成方法の工程図であり、１はシリコン基板、２は絶縁膜
、３は多結晶シリコン膜、４は酸化膜、６はタングステ
ンボリサイド膜、７はシミ、８は自然酸化膜である。FIG. 2 is a process diagram of a conventional method for forming tungsten bolide, in which 1 is a silicon substrate, 2 is an insulating film, 3 is a polycrystalline silicon film, 4 is an oxide film, 6 is a tungsten bolide film, and 7 8 is a stain, and 8 is a natural oxide film.
以上のように構成された半導体装置の製造方法について
、以下その工程を説明する。The steps of the method for manufacturing the semiconductor device configured as described above will be described below.
まず、多結晶シリコン膜３をシリコン基板１上の絶縁膜
２全面に成長する（第２図Ａ）。多結晶シリコン成長後
に発生した酸化膜４をフッ酸により除去する（第２図Ｂ
）。次に自然酸化膜８の発生を最小に抑えながらタング
ステンポリサイド成長装置に入れ、装置内を真空にした
後タングステンボリサイド膜６を成長する（第２図Ｃ）
。First, a polycrystalline silicon film 3 is grown on the entire surface of the insulating film 2 on the silicon substrate 1 (FIG. 2A). The oxide film 4 generated after polycrystalline silicon growth is removed using hydrofluoric acid (Fig. 2B).
). Next, the tungsten polycide film 6 is grown by placing it in a tungsten polycide growth apparatus while minimizing the formation of the natural oxide film 8, and after evacuating the inside of the apparatus (Fig. 2C).
.
発明が解決しようとする課題
しかしながら、上記従来の方法では、多結晶シリコン膜
３上の酸化膜４をフッ酸により除去し、スピン乾燥機な
どの酸素ガスを含む雰囲気中で乾燥を行うとシミ７が発
生する。このシミは段差部で顕著である。タングステン
ボリサイド成長装置に挿入する時の酸素の存在等により
多結晶シリコン上に自然、酸化膜８が成長して界面での
オーミックな接触が得られなかったりする。また、自然
酸化膜８やシミ７が原因となり次工程以降の熱処理によ
る異常酸化によりタングステンボリサイドの剥がれが発
生する。この現象も段差部付近で特に顕著となる。本発
明は上記従来の問題点を解決するもので、タングステン
ボリサイド等の高融点金属と多結晶シリコンの界面にシ
ミや自然酸化膜がな《、オーミックな接触を示し、かつ
、次工程以降での高融点金属の剥がれを防ぐ半導体装置
の製造方法を提供することを目的とする。Problems to be Solved by the Invention However, in the conventional method described above, when the oxide film 4 on the polycrystalline silicon film 3 is removed with hydrofluoric acid and dried in an atmosphere containing oxygen gas such as in a spin dryer, stains 7 are generated. occurs. This stain is noticeable at the step part. Due to the presence of oxygen during insertion into a tungsten bolicide growth apparatus, an oxide film 8 naturally grows on the polycrystalline silicon, making it impossible to obtain ohmic contact at the interface. In addition, the natural oxide film 8 and the stain 7 cause peeling of the tungsten bolide due to abnormal oxidation caused by heat treatment in subsequent steps. This phenomenon is also particularly noticeable near the stepped portion. The present invention solves the above-mentioned conventional problems, and eliminates stains and natural oxide films at the interface between a high-melting point metal such as tungsten bolide and polycrystalline silicon, shows ohmic contact, and can be used in subsequent processes. An object of the present invention is to provide a method for manufacturing a semiconductor device that prevents peeling of a high-melting point metal.
課題を解決するための手段
この課題を解決するために本発明の半導体装置の製造方
法は多結晶シリコンの表面をフッ酸で処理した後、連続
でＲＣＡ洗浄を行い、多結晶シリコン表面に酸化薄膜を
形成してシミの発生を防ぎ、その後減圧化学気相成長内
にて高温の水素ガスによりその酸化薄膜を還元除去して
高融点金属を成長させる工程から構成されている。Means for Solving the Problem In order to solve this problem, the method for manufacturing a semiconductor device of the present invention involves treating the surface of polycrystalline silicon with hydrofluoric acid, followed by continuous RCA cleaning, and forming a thin oxide film on the surface of the polycrystalline silicon. The process consists of forming a thin oxide film to prevent the formation of stains, and then reducing and removing the oxidized thin film using high-temperature hydrogen gas in a low-pressure chemical vapor deposition to grow a high-melting point metal.
作用
この構成により、多結晶シリコン表面はフッ酸により一
度撥水状態にされ完全に酸化膜を除去された後、連続工
程としてＲＣＡ洗浄を行い、上記多結晶シリコン上に酸
化薄膜を形成する。そして、酸化薄膜で多結晶シリコン
膜表面を覆った状態で乾燥を行うため、撥水乾燥で生じ
るシミを防止できる。次に減圧化学気相成長装置に挿入
する場合も、自然酸化膜の成長が無視し得るため連続工
程の必要性がない。そして減圧化学気相成長装置内で高
温の水素ガスを流し、ＲＣＡ洗浄で形成した酸化薄膜を
揮発性生成物ＳｉＯと８ ２０に分解して酸化薄膜を除
去し、完全に多結晶シリコン表面を露出した後タングス
テンボリサイド等の高融点金属成長を行うためオーミッ
クな接触をもち、かつ、次工程以降で剥がれることのな
い高融点金属を得ることができる。With this configuration, the surface of the polycrystalline silicon is once made water repellent with hydrofluoric acid to completely remove the oxide film, and then RCA cleaning is performed as a continuous process to form a thin oxide film on the polycrystalline silicon. Since drying is performed with the surface of the polycrystalline silicon film covered with a thin oxide film, stains caused by water-repellent drying can be prevented. When the film is then inserted into a reduced pressure chemical vapor deposition apparatus, there is no need for a continuous process because the growth of a natural oxide film can be ignored. Then, high-temperature hydrogen gas is flowed in a reduced-pressure chemical vapor deposition apparatus to decompose the oxide thin film formed by RCA cleaning into volatile products SiO and 820, removing the oxide thin film and completely exposing the polycrystalline silicon surface. After that, a high melting point metal such as tungsten bolicide is grown, so it is possible to obtain a high melting point metal that has ohmic contact and does not peel off in subsequent steps.
実施例
以下、本発明の一実施例について、図面を参照しながら
説明する。EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例における半導体装置の製造方
法の工程図を示すものである。第１図においては、１は
シリコン基板、２は絶縁膜、３は多結晶シリコン膜、４
は酸化膜、５は酸化薄膜、６はタングステンボリサイド
膜である。FIG. 1 shows a process diagram of a method for manufacturing a semiconductor device according to an embodiment of the present invention. In FIG. 1, 1 is a silicon substrate, 2 is an insulating film, 3 is a polycrystalline silicon film, and 4 is a silicon substrate.
5 is an oxide film, 5 is an oxide thin film, and 6 is a tungsten bolide film.
以上のように構成された本発明の半導体装置の製造方法
について、以下その動作を説明する。The operation of the method for manufacturing a semiconductor device of the present invention configured as described above will be described below.
まず、シリコン基板上１の絶縁膜２に形成した多結晶シ
リコン３上の酸化膜４（第１図Ａ）に対し、バッファー
ドフッ酸２０：１により２０秒間エッチングし、多結晶
シリコン膜３の表面を露出させる（第１図Ｂ）。連続工
程としてＲＣＡ洗浄を行い、酸化薄膜を約２０Ａ成長さ
せる（第１図Ｃ）。次に温度６００℃の減圧化学気相成
長装置に挿入し、真空引きとＮ２ガス置換を繰り返しな
がら９５０℃まで昇温する。温度が安定した状態で５ｅ
／ｗｉｎの水素ガスを流し、約３ｍｉｎで酸化薄膜５を
還元除去する（第１図Ｄ）。再度真空引きを行い、降温
し、温度が成長温度である６００℃に安定した時点で六
フッ化タングステンガスとジクロ口シランガス及びキャ
リアガスであるアルゴンガスを流して、タングステンボ
リサイド６の成長を開始する（第１図Ｅ）。尚、高融点
金属として、モリブデンボリサイド等の金属も含む。First, the oxide film 4 (FIG. 1A) on the polycrystalline silicon 3 formed on the insulating film 2 on the silicon substrate 1 is etched with buffered hydrofluoric acid 20:1 for 20 seconds to remove the polycrystalline silicon film 3. Expose the surface (Figure 1B). RCA cleaning is performed as a continuous process to grow a thin oxide film of about 20A (FIG. 1C). Next, it is inserted into a reduced pressure chemical vapor deposition apparatus at a temperature of 600°C, and the temperature is raised to 950°C while repeating evacuation and N2 gas replacement. 5e when the temperature is stable
/win of hydrogen gas is supplied to reduce and remove the oxide thin film 5 in about 3 minutes (FIG. 1D). Vacuuming is performed again, the temperature is lowered, and when the temperature stabilizes at 600°C, which is the growth temperature, tungsten hexafluoride gas, dichlorosilane gas, and argon gas as a carrier gas are flowed, and the growth of tungsten bolicide 6 is started. (Figure 1E). Note that the high melting point metal also includes metals such as molybdenum bolide.
発明の効果
本発明は多結晶シリコン上の酸化膜を除去後、酸化薄膜
を形成し、減圧化学気相成長装置内での高温の水素ガス
処理を用いて、その酸化薄膜を完全に除去した後タング
ステンボリサイド成長を開始することにより、多結晶シ
リコンとタングステンボリサイドの界面におけるシミや
自然酸化膜の発生を抑え、オーミックな接触で、かつ、
次工程以降においてタングステンボリサイドの剥がれ等
を防ぐ半導体装置を実現するものである。Effects of the Invention The present invention forms an oxide thin film after removing an oxide film on polycrystalline silicon, and then completely removes the oxide thin film using high temperature hydrogen gas treatment in a reduced pressure chemical vapor deposition apparatus. By starting tungsten bolicide growth, the generation of stains and natural oxide films at the interface between polycrystalline silicon and tungsten bolicide is suppressed, and ohmic contact is achieved.
This realizes a semiconductor device that prevents peeling of tungsten bolide in subsequent steps.
第１図は本発明の一実施例における半導体装置の製造方
法の工程図、第２図は従来の製造方法の工程図である。
１・・・・・・シリコン基板、２・・・・・・絶縁膜、
３・・・・・・多結晶シリコン膜、４・・・・・・酸化
膜、５・・・・・・酸化薄膜、６・・・・・・タングス
テンボリサイド、７・・・・・・シミ、８・・・・・・
自然酸化膜。FIG. 1 is a process diagram of a method for manufacturing a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a process diagram of a conventional manufacturing method. 1... Silicon substrate, 2... Insulating film,
3... Polycrystalline silicon film, 4... Oxide film, 5... Oxide thin film, 6... Tungsten bolide, 7... Stains, 8...
Natural oxide film.
Claims (1)
る工程と、前記多結晶シリコンの表面に薄い酸化膜を成
長させる工程と、前記半導体基板を減圧化学気相成長装
置に挿入し、高温の水素ガスを流して前記薄い酸化膜を
還元除去して前記多結晶シリコン表面を露出させる工程
と、前記減圧化学気相成長装置内で前記多結晶シリコン
上に高融点金属成長を行う工程とを具備することを特徴
とする半導体装置の製造方法。A process of removing an insulating film on the surface of polycrystalline silicon on a semiconductor substrate, a process of growing a thin oxide film on the surface of the polycrystalline silicon, and a process of inserting the semiconductor substrate into a low pressure chemical vapor deposition apparatus and heating it with high temperature hydrogen. The method comprises a step of reducing and removing the thin oxide film by flowing a gas to expose the surface of the polycrystalline silicon, and a step of growing a refractory metal on the polycrystalline silicon in the reduced pressure chemical vapor deposition apparatus. A method for manufacturing a semiconductor device, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5703489A JPH02237025A (en) | 1989-03-09 | 1989-03-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5703489A JPH02237025A (en) | 1989-03-09 | 1989-03-09 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02237025A true JPH02237025A (en) | 1990-09-19 |
Family
ID=13044159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5703489A Pending JPH02237025A (en) | 1989-03-09 | 1989-03-09 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02237025A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09167743A (en) * | 1995-10-31 | 1997-06-24 | Internatl Business Mach Corp <Ibm> | Method for forming low stress polycide conductor on semiconductor chip |
| JPH1070124A (en) * | 1996-06-24 | 1998-03-10 | Hyundai Electron Ind Co Ltd | Method for forming conductive wiring of semiconductor device |
| US5780360A (en) * | 1994-09-27 | 1998-07-14 | Applied Materials, Inc. | Purge in silicide deposition processes dichlorosilane |
| US6221771B1 (en) | 1998-01-14 | 2001-04-24 | Mitsubishi Denki Kabushiki Kaisha | Method of forming tungsten silicide film, method of fabricating semiconductor devices and semiconductor manufactured thereby |
-
1989
- 1989-03-09 JP JP5703489A patent/JPH02237025A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5780360A (en) * | 1994-09-27 | 1998-07-14 | Applied Materials, Inc. | Purge in silicide deposition processes dichlorosilane |
| US5817576A (en) * | 1994-09-27 | 1998-10-06 | Applied Materials, Inc. | Utilization of SiH4 soak and purge in deposition processes |
| JPH09167743A (en) * | 1995-10-31 | 1997-06-24 | Internatl Business Mach Corp <Ibm> | Method for forming low stress polycide conductor on semiconductor chip |
| JPH1070124A (en) * | 1996-06-24 | 1998-03-10 | Hyundai Electron Ind Co Ltd | Method for forming conductive wiring of semiconductor device |
| US6221771B1 (en) | 1998-01-14 | 2001-04-24 | Mitsubishi Denki Kabushiki Kaisha | Method of forming tungsten silicide film, method of fabricating semiconductor devices and semiconductor manufactured thereby |
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