JPH02238400A - Multilayer film - Google Patents
Multilayer filmInfo
- Publication number
- JPH02238400A JPH02238400A JP5778889A JP5778889A JPH02238400A JP H02238400 A JPH02238400 A JP H02238400A JP 5778889 A JP5778889 A JP 5778889A JP 5778889 A JP5778889 A JP 5778889A JP H02238400 A JPH02238400 A JP H02238400A
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- Prior art keywords
- multilayer film
- layer
- film
- light
- reflectance
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Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、軟X線領域の光を反射するのに好適な多層膜
に関するものである6
〔従来の技術〕
多層膜は、可視光領域の光の反射防止膜等として、従来
から広く応用されてきた。近年軟X線領域(10〜10
00人)の光源開発,研究の進展に伴い、軟X線領域で
使用できる光学素子として多層膜が注目されている。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a multilayer film suitable for reflecting light in the soft X-ray region6 [Prior Art] The multilayer film is suitable for reflecting light in the visible light region It has been widely used as an anti-reflection coating for light. In recent years, the soft X-ray region (10~10
With the progress of light source development and research, multilayer films are attracting attention as optical elements that can be used in the soft X-ray region.
重い元素と軽い元素とを交互に積層した軟X線用多層膜
の構造を第4図に示す。図において、1はX線反射率が
大きい重い元素の層でA/lと呼び、2はX線反射率が
小さな軽い元素の層でB層と呼ぶ.3は基板である。上
記の構造を有する多層膜で軟X線を効率よく反射するた
めには、上記AJIのX線反射率と上記B層のX線反射
率との差が大きいことが必要である。そのために、A層
にはX線反射率が大きな重い元素が用いられ、B層には
X線反射率が小さな軽元素が用いられている。従来、用
いられてきた多層膜は、例えばWとCとからなる多層膜
をW/Cと表現すれば、W/C、Mo/SL,Aft/
Cu,Au/C.Ta/C.Cu/C、Re/C.W/
Be等である。FIG. 4 shows the structure of a multilayer film for soft X-rays in which heavy elements and light elements are alternately laminated. In the figure, 1 is a layer of a heavy element with a high X-ray reflectance and is called A/l, and 2 is a layer of a light element with a low X-ray reflectance and is called the B layer. 3 is a substrate. In order to efficiently reflect soft X-rays with the multilayer film having the above structure, it is necessary that the difference between the X-ray reflectance of the AJI and the X-ray reflectance of the B layer be large. For this purpose, a heavy element with a high X-ray reflectance is used in the A layer, and a light element with a low X-ray reflectance is used in the B layer. Conventionally used multilayer films include W/C, Mo/SL, Aft/C, for example, if a multilayer film made of W and C is expressed as W/C.
Cu, Au/C. Ta/C. Cu/C, Re/C. W/
Be et al.
W/C.Au/C,Ta/C,Cu/C.Re/C、W
/ B e等の多層膜において、Be.C等の元素単
体で形成されているB層は.JM子同士相互の結合が弱
くかつB漕を構成する軽元素は原子半径が小さいため、
B層を離れてA層に拡散しやすいという傾向を持ってい
る。例えば、現在用いられているC膜は、グラファイト
状の膜であり、グラファイト内の炭素はダイヤモンドに
較べ分解してA層に拡散しやすい。また、結合が強く分
解や拡散しにくいダイヤモンド状の薄膜も作られつつあ
るが,島状に成長するため表面が平坦な極薄膜を作るこ
とが難しいのが現状である。一方.W/Beに用いられ
ているBeもBe同士の結合が弱く、島状に成長する傾
向があり、Blを離れA層に拡散する傾向がある。また
、Cu/Anのように金属同士の多層膜においては、金
属の性質として歳とCuとはお互いに拡散しやすい。こ
のような相互拡散のためにA/lのX線反射率が下がる
と同時に、BlのX線反射率が上がり、結果として多層
膜の反射率が低下するという問題があった。さらに、上
記B層とA層との相互拡散は、時間や多層膜への光照射
による温度上昇によっても助長されるため、多暦膜の反
射率の経時低下を生じるなどの問題があった。W/C. Au/C, Ta/C, Cu/C. Re/C,W
/ Be, etc., in a multilayer film such as Be. The B layer is formed from a single element such as C. Since the mutual bond between JM molecules is weak and the light elements that make up the B column have a small atomic radius,
It has a tendency to leave the B layer and easily diffuse into the A layer. For example, the currently used C film is a graphite-like film, and the carbon in the graphite is more easily decomposed and diffused into the A layer than in diamond. Additionally, diamond-like thin films with strong bonds that are difficult to decompose and diffuse are being created, but because they grow in island-like shapes, it is currently difficult to create ultra-thin films with flat surfaces. on the other hand. Be used in W/Be also has a weak bond between Be and tends to grow in an island shape, leaving Bl and diffusing into the A layer. Furthermore, in a multilayer film of metals such as Cu/An, the metal and Cu tend to diffuse into each other due to the nature of the metal. Due to such mutual diffusion, the X-ray reflectance of A/l decreases and at the same time the X-ray reflectance of Bl increases, resulting in a problem in that the reflectance of the multilayer film decreases. Furthermore, since the mutual diffusion between the B layer and the A layer is promoted by time and temperature increase due to light irradiation on the multilayer film, there is a problem that the reflectance of the multilayer film decreases over time.
従来の多層膜に用いられている物質AとBとは化合物を
作る組合わせであることが多く、かつ形成された化合物
も安定であり,界面数層から数十層にわたって化合物を
生じることが多い。例えば、最もよく用いられているW
/C多層膜では、界面でWとCとが化合してWCを形成
し、WCは化学的に安定で形成されやすい6また、B層
にSiを用いると、ほとんどの場合A暦の原子と化合し
てシリサイドを形成してしまう。このように界面に数層
から数十層の化合物ができることによって5AMとB層
間の反射率差が減少し、多層膜の反射率が著しく低下す
るといった問題があった。Substances A and B used in conventional multilayer films are often a combination that forms a compound, and the formed compound is also stable, often forming a compound over several to tens of layers at the interface. . For example, the most commonly used W
In the /C multilayer film, W and C combine at the interface to form WC, and WC is chemically stable and easy to form.6 Furthermore, if Si is used in the B layer, in most cases it will combine with atoms of the A calendar. They combine to form silicide. The formation of several to several tens of layers of compounds at the interface reduces the difference in reflectance between the 5AM and B layers, resulting in a problem in that the reflectance of the multilayer film is significantly reduced.
Be.C等でB層を形成すると、元素同士の結合が強い
単結晶薄膜が作りにくいため粒状に成長しやすく、A層
との界面に凸凹ができるためX線の不規則な散乱を生じ
,多層膜の反射率が著しく低下するという問題があった
。Be. If layer B is formed with C, etc., it is difficult to form a single-crystal thin film with strong bonds between elements, so it tends to grow in granular form, and the interface with layer A is uneven, causing irregular scattering of X-rays, resulting in a multilayer film. There was a problem in that the reflectance of the film was significantly reduced.
また、Ba.C等を用いて極めて薄いBe.C薄膜にし
た場合、基板を低温に保った状態で、化学的に安定でか
つ基板や重い元素層との付看性が良く平坦な薄膜を形成
することは難しいのが現状である。そのため、時間の経
過によって多層膜が基板から剥離してしまうという問題
があった.さらに、この様な軽元素を用いた多層膜にS
R光などの強力な光を照射すると、多層膜には瞬間的に
熱が加えられ,その温度が局部的に上昇し、多暦膜の軽
元素層薄膜が化学的に不安定で付着性が悪いため、多層
膜が基板から剥離してしまうという問題があった。また
、従来のCやBeあるいはCu、Siを形成する際に基
板を加熱すると、界面で重い元素と化合物を形成したり
、あるいは重い元素内に急速に拡散するという問題があ
った。Also, Ba. Using extremely thin Be. In the case of a C thin film, it is currently difficult to form a flat thin film that is chemically stable and has good adhesion to the substrate and heavy element layer while keeping the substrate at a low temperature. Therefore, there was a problem in that the multilayer film peeled off from the substrate over time. Furthermore, S is added to multilayer films using such light elements.
When irradiated with strong light such as R light, heat is instantaneously applied to the multilayer film, causing the temperature to rise locally, causing the thin light element layer of the multilayer film to become chemically unstable and adhesive. As a result, there was a problem in that the multilayer film peeled off from the substrate. Further, when a substrate is heated when forming conventional C, Be, Cu, or Si, there is a problem that a compound is formed with a heavy element at the interface or that the heavy element rapidly diffuses into the element.
上記のように,従来用いていた多層膜においては、A層
とB層との界面で、A層を構成する原子とB層を構成す
る原子とが相互に拡散したり、あるいは化合物をつくっ
たり、あるいはまた界面に凹凸ができたりするのが原因
になって、重い元素層Aの軟X線反射率が低下し、同時
に軽元素/WBの反射率が上がるため反射率差を保つこ
とは難しく、設計値どうりの多層膜反射率が得られない
という問題があり、さらにはB層の基板あるいはA層へ
の付着性が悪いため、多層膜が剥離してしまうという問
題があった。As mentioned above, in the conventional multilayer film, at the interface between layer A and layer B, the atoms forming layer A and the atoms forming layer B may diffuse into each other or form a compound. Alternatively, the soft X-ray reflectance of the heavy element layer A decreases due to unevenness at the interface, and at the same time the reflectance of the light element/WB increases, making it difficult to maintain the reflectance difference. However, there was a problem in that the reflectance of the multilayer film could not be obtained as per the designed value, and furthermore, there was a problem in that the multilayer film peeled off because the adhesion of the B layer to the substrate or the A layer was poor.
本発明は、元素間の結合が弱い単一の軽元素からなる薄
膜を多層膜に用い,軽元素がA層に拡散したり,あるい
は平坦で付着性がいい薄膜が作りにくいために、多層膜
のX線反射率が低下したり多層膜が剥離するという問題
点を解決した多層膜を得ることを目的とする。The present invention uses a thin film made of a single light element with weak inter-element bonds in a multilayer film, and prevents the light element from diffusing into the A layer, or because it is difficult to make a flat thin film with good adhesion. The object of the present invention is to obtain a multilayer film that solves the problems of a decrease in X-ray reflectance and peeling of the multilayer film.
上記目的は,軽元素層に単一元素と同程度の複素屈折率
を有する、ほう素(B)と炭素(C)からなる化合物B
4Cを用いて、多層膜を形成することにより達成される
。The above purpose is to create a compound B consisting of boron (B) and carbon (C) that has a complex refractive index comparable to that of a single element in the light element layer.
This is achieved by forming a multilayer film using 4C.
〔作用】
物質の複素屈折率は
n=1−δ一iβ
で表示される。δおよびβはそれぞれ物質固有の値をと
る.C,B元素単体さらにはB4C化合物の軟X線領域
のδを第5図に示す。C.B元素単体やB4C化合物の
軟X線領域のβを第6図に示す。δは0〜100人の間
ではC,B.B,Cともにほぼ同じ大きさを示し、特に
CとBとが吸収端(それぞれ44人、31人)で一時減
少し、B4CがBとCの吸収端で少し減少する以外は殆
ど同じ傾きと大きさを持つ。また、第6図からβは、波
長λがOくλ(20人ではC.B.B4Cともほとんど
同じで,20人〈λ〈44人ではその大きさがB〈B4
C<Cになる。44人〈λ<70人ではCくB4CくB
となり、70人〈λではB<B4C<Cである。[Operation] The complex refractive index of a substance is expressed as n=1−δ−iβ. δ and β each take a value specific to the substance. FIG. 5 shows δ in the soft X-ray region of C and B elements alone as well as the B4C compound. C. FIG. 6 shows β in the soft X-ray region of B element alone and B4C compound. δ is C, B for 0 to 100 people. Both B and C show almost the same magnitude, and in particular, C and B temporarily decrease at the absorption edge (44 and 31 people, respectively), and B4C has almost the same slope, except for a slight decrease at the absorption edge of B and C. have size. Also, from Fig. 6, β shows that the wavelength λ is O and λ (for 20 people, it is almost the same as C.B.B4C, and for 20 people <λ<<44 people, its size is B<B4
C<C. 44 people〈λ<70 people, C×B4C×B
So, for 70 people <λ, B<B4C<C.
したがって、B4C膜のδおよびβは、多暦膜材料とし
て一般的に用いられているC元素単体からなる膜と同程
度か,波長によっては多層膜材料として複素屈折率が小
さくすぐれているという特徴を有する。Therefore, the δ and β of the B4C film are comparable to those of a film made of a single element C, which is commonly used as a multilayer film material, or depending on the wavelength, it has a small complex refractive index that is superior to that of a multilayer film material. has.
上記のように光学的に従来の元素単体と同程度、あるい
はよりすぐれた値を示すのに加え、B4C化合物は融点
が2350℃と非常に高く、化学的に安定であるという
特徴を有している。したがって、従来の元素単体からな
る膜に較べ局所的な加熱に対しても安定で、分解や拡散
は起らないし、経時変化を起すこともないという利点を
有している。In addition to exhibiting optical values comparable to or better than conventional single elements as mentioned above, B4C compounds have a very high melting point of 2350°C and are chemically stable. There is. Therefore, it has the advantage that it is more stable against local heating than conventional films made of single elements, does not decompose or diffuse, and does not change over time.
さらに,融点が高いことから判るようにBとCとの結合
は強く、単体のB,Cが重い元素と化合物を作りやすい
のに較べ、B4Gは重い元素と化合物を作らないため、
界面で重い元素層とまじることなく、また,分解して重
い元素層内に拡散するおそれが非常に少ない。Furthermore, as can be seen from its high melting point, the bond between B and C is strong, and while simple B and C easily form compounds with heavy elements, B4G does not form compounds with heavy elements.
It does not mix with the heavy element layer at the interface, and there is very little risk of it decomposing and diffusing into the heavy element layer.
また、基板に強く付着する膜を形成するためには、薄膜
形成時に加熱することが有効であるが,従来は加熱によ
って軽元素が拡散あるいは化合物を作るために,加熱で
きなかった。しかし,B4Cは単一元素薄膜に較べて熱
的に安定であるため、作製に際しては数百度の熱を加え
ても分解して拡散するおそれは少なく、基板を加熱する
ことによって、付着性がよく、かつ平坦な薄膜を作りや
すいという利点を有し,さらに、基板を加熱することが
できるため、一般的にスパッタリング法よりも結合が強
く平坦な薄膜ができるCVD法を用いることにより、薄
膜を作製できるという利点を有している.また.B4G
は2つの成分を有するため,粒状成長の原因ともなる薄
膜内の応力を、BとCとの組成を僅かに変えることで容
易に制御することができる。In addition, in order to form a film that strongly adheres to the substrate, it is effective to heat the thin film during formation, but heating has not been possible in the past because light elements diffuse or form compounds when heated. However, since B4C is thermally stable compared to single-element thin films, there is little risk of it decomposing and diffusing even when heated to several hundred degrees during fabrication, and by heating the substrate, it can improve adhesion. The CVD method has the advantage of being easy to create a flat thin film.Furthermore, since the substrate can be heated, the CVD method generally has stronger bonds than the sputtering method and can produce a flat thin film. It has the advantage of being able to Also. B4G
Since B has two components, the stress within the thin film, which causes grain growth, can be easily controlled by slightly changing the composition of B and C.
つぎに本発明の実施例を図面とともに説明する。 Next, embodiments of the present invention will be described with reference to the drawings.
第1図は本発明による多層膜の一実施例を示す構造図,
第2図は上記多層膜のX線反射率測定系の構成を示す図
、第3図は上記実施例における多層膜のX線反射率を実
験値と理論値で示した図である.B4CをB層に用い、
WをA層に用いて,波長39.8人の軟X線を入射角7
0゜で最も強く反射する多層膜を設計し、第1図に示す
ようにSLを用いた基板3上に、B4C膜10とW膜1
1とをそれぞれ20層ずつ、スパッタリング法により交
互に積層して多層膜を形成した。B4C膜はB1、B2
・・・B20、W膜はA1、A2・・・A20と表示し
、各層の厚さを表1に示す。FIG. 1 is a structural diagram showing an embodiment of a multilayer film according to the present invention.
FIG. 2 is a diagram showing the configuration of the X-ray reflectance measuring system for the multilayer film described above, and FIG. 3 is a diagram showing the X-ray reflectance of the multilayer film in the above example using experimental values and theoretical values. Using B4C for the B layer,
Using W in the A layer, soft X-rays with a wavelength of 39.8 and an incident angle of 7
A multilayer film with the strongest reflection at 0° was designed, and a B4C film 10 and a W film 1 were placed on a substrate 3 using SL as shown in FIG.
A multilayer film was formed by alternately stacking 20 layers of 1 and 1 by sputtering. B4C film is B1, B2
. . B20, W films are indicated as A1, A2 . . . A20, and the thickness of each layer is shown in Table 1.
以下余白
表1
上記多層膜のX線反射率測定は第2図に示すような構成
で行った。入射X線12は波長39.8人のAg(銀)
の特性X線(M線)で,入射角θl3でA20表面に照
射し、反射X線14を測定したが、その測定例を第3図
に示す。第3図の横軸は入射角,縦軸はX線の反射率で
ある。第3図において実線15は実測値を示し,点線1
1’iは計算値を示してぃるが、実線l5と点線16と
はほぼよく一致し、B4Cが多層膜組成物として有効で
あることを示している。上記Wに代えて、Au.Re,
Bi, Mo. Ta、Rh等を用いても、同様な結
果を得ることができる。Margin Table 1 Below: The X-ray reflectance measurement of the above multilayer film was carried out using the configuration shown in FIG. Incident X-ray 12 has a wavelength of 39.8 Ag (silver)
The A20 surface was irradiated with characteristic X-rays (M-rays) at an incident angle θl3, and reflected X-rays 14 were measured. An example of the measurement is shown in FIG. In FIG. 3, the horizontal axis is the incident angle, and the vertical axis is the X-ray reflectance. In Fig. 3, the solid line 15 indicates the actual measured value, and the dotted line 1
1'i indicates a calculated value, and the solid line 15 and the dotted line 16 almost match well, indicating that B4C is effective as a multilayer film composition. In place of W above, Au. Re,
Bi, Mo. Similar results can be obtained by using Ta, Rh, etc.
上記のように、B4Cのδおよびβは、多層膜材料とし
て一般に用いられているC元素単体からなる膜と同程度
か,波長によっては複素屈折率が小さく,多層膜材料と
してよりすぐれた利点をもつ。B4C化合物は融点が2
350℃と非常に高く、化学的に安定である。したがっ
て、局所的な加熱に対しても安定で分解や拡散が起らな
いし、経時変化を起すこともないという利点を有してい
る。As mentioned above, the δ and β of B4C may be on the same level as a film made of the simple element C, which is generally used as a multilayer film material, or depending on the wavelength, the complex refractive index is small, and it has superior advantages as a multilayer film material. Motsu. The B4C compound has a melting point of 2
It has a very high temperature of 350°C and is chemically stable. Therefore, it has the advantage that it is stable even when subjected to local heating, does not decompose or diffuse, and does not change over time.
また、B4Cは重い元素と化合物を作らないため、界面
で重い元素層とまじらず、分解して重い元素層内に拡散
するおそれは非常に少なく、単一元素薄膜に較べB4C
は熱的に安定であるため、作製に際し数百度の熱を加え
ても分解して拡散する怖れは少なく、基板を加熱するこ
とによって付着性が良く、かつ平坦な薄膜を作りやすい
という利点を有するため、一般的にスパッタリング法よ
り結合が強い薄膜を作るCVD法を用いて,所定の薄膜
を作製することができる。さらに、B4Cは2つの成分
からなるため,粒状成長の原因になる薄膜内の応力を、
BとCとの組成を僅かに変えることによって容易に制御
することができる。In addition, since B4C does not form compounds with heavy elements, there is very little risk that it will mix with the heavy element layer at the interface, decompose and diffuse into the heavy element layer, and compared to a single element thin film, B4C
Because it is thermally stable, there is little risk of it decomposing and diffusing even if heat of several hundred degrees is applied during production, and it has the advantage that it is easy to create a flat thin film with good adhesion by heating the substrate. Therefore, a predetermined thin film can be produced using the CVD method, which generally produces a thin film with stronger bonding than the sputtering method. Furthermore, since B4C consists of two components, it reduces the stress within the thin film that causes grain growth.
It can be easily controlled by slightly changing the composition of B and C.
上記のように本発明による多層膜は、屈折率がそれぞれ
異なる複数の薄膜を、交互に積層して形成した多層膜に
おいて、上記複数の薄膜のうち一方の薄膜の組成が、ほ
う素(B)と炭素(C)とからなる化合物であることに
より、熱的に安定で経時変化が少ない多層膜が得られ,
強い光を反射する必要があるSR光用のミラーに用いる
ことができる。また、パルス的に強力光を発生するプラ
ズマ光源のミラーに用いることができる。As described above, the multilayer film according to the present invention is a multilayer film formed by alternately laminating a plurality of thin films each having a different refractive index, and one of the plurality of thin films has a composition of boron (B). and carbon (C), it is possible to obtain a multilayer film that is thermally stable and shows little change over time.
It can be used as a mirror for SR light that needs to reflect strong light. Furthermore, it can be used as a mirror of a plasma light source that generates intense light in a pulsed manner.
【図面の簡単な説明】
第1図は本発明による多層膜の一実施例を示す構成図、
第2図は上記多層膜のX線反射率測定系の構成を示す図
、第3図は上記多層膜のX線反射率における実験値と理
論値とを示す図、第4図は多層膜の基本構造を示す図、
第5図は波長0〜100人領域のX線に対するB.C.
B4Gの光学定数δの値を示す図、第6図は波長が0〜
100人領域のX線に対するB.C.B4Gの光学定数
βの値を示す図である.
1・・・重い元素のA層 2・・・軽い元素のBMi
o・・・B4Cの層
特許出願人 日本電信電話株式会社
代理人弁理士 中 村 純之助
入射内e(0)
第3図
第4
図
第6
図[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1 is a block diagram showing an embodiment of a multilayer film according to the present invention;
Figure 2 is a diagram showing the configuration of the X-ray reflectance measurement system for the multilayer film, Figure 3 is a diagram showing experimental values and theoretical values of the X-ray reflectance of the multilayer film, and Figure 4 is a diagram showing the X-ray reflectance measurement system for the multilayer film. A diagram showing the basic structure,
Figure 5 shows the B. C.
A diagram showing the value of the optical constant δ of B4G, Figure 6 is for wavelengths from 0 to
B. for X-rays in the 100 person area. C. It is a figure showing the value of the optical constant β of B4G. 1... A layer of heavy elements 2... BMi of light elements
o... B4C layer patent applicant Nippon Telegraph and Telephone Corporation Representative Patent Attorney Junnosuke Nakamura Incidence e(0) Figure 3 Figure 4 Figure 6
Claims (1)
して形成した多層膜において、上記複数の薄膜のうち一
方の薄膜の組成が、ほう素(B)と炭素(C)とからな
る化合物であることを特徴とする多層膜。1. In a multilayer film formed by alternately laminating a plurality of thin films each having a different refractive index, one of the plurality of thin films has a composition consisting of boron (B) and carbon (C). A multilayer film characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5778889A JPH02238400A (en) | 1989-03-13 | 1989-03-13 | Multilayer film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5778889A JPH02238400A (en) | 1989-03-13 | 1989-03-13 | Multilayer film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02238400A true JPH02238400A (en) | 1990-09-20 |
Family
ID=13065623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5778889A Pending JPH02238400A (en) | 1989-03-13 | 1989-03-13 | Multilayer film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02238400A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011527436A (en) * | 2008-07-07 | 2011-10-27 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Extreme ultraviolet radiation reflective elements containing sputter resistant materials |
-
1989
- 1989-03-13 JP JP5778889A patent/JPH02238400A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011527436A (en) * | 2008-07-07 | 2011-10-27 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Extreme ultraviolet radiation reflective elements containing sputter resistant materials |
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