JPH02239678A - Semiconductor device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, particularly a semiconductor laser device, which is subjected to so-called junction-down assembly.

[Conventional technology J FIG. 3 is a sectional view showing a conventional semiconductor laser device.

In the figure, (1) is n-type (hereinafter abbreviated as D-) QaA
(2) is the n-Alo, 3Gao, 7Aa first cladding layer provided on the n-GaAs substrate (1);
(3) is a condouged (hereinafter abbreviated as un-) GaAs active layer provided on the rl-AI0,3QQrBA41 cladding layer (2), and (4) is an un-GaAs active layer (3).
) having a striped convex portion (5) provided on the p-type (hereinafter abbreviated as p-1) Alo. 3Gan4A8 second hood layer, (6) is p-Alo. 3Gan. 7As 2nd
The p-GaAs first contact layer (7) is formed on the striped convex portion (5) of the Kufts 7m (4).
- Alo, 3Gao, 7As second cladding layer (4)
and the p-GaAa first contact layer (6) with a substantially uniform thickness and a striped convex portion (8) with a height h.
) with n-GaAs current blocking layer, (9) is n-
Striped convex portions (8) of GaAefi flow blocking layer (7)
The p-GaAs first contact layer (6
), and (10) is the p-type region provided on the Zn-diffused p-type region (9).
The side electrode (l1) is an n-side electrode provided under the low GsAs substrate (1).

Next, the operation will be explained. When a bias voltage such that the p-side electrode (10) is positive is applied between the p-side IE electrode (10) and the n-side tFM (1l), the un-GaAs active layer (3 ) are injected with holes and electrons, which recombine and emit light. As the injection level is increased, induced radiation begins, which eventually leads to laser oscillation. [Problems to be Solved by the Invention J] Semiconductor laser devices generate heat when operated.

The generated heat causes the oscillation threshold current of the semiconductor laser device to increase and the light emitting efficiency to decrease.

In severe cases, oscillation may stop. Therefore, it is practically important to efficiently dissipate the heat generated during operation. As a means to improve heat dissipation, there is a so-called jangkun yong down assembly method in which the operating area is mounted close to the heat sink. Conventional semiconductor devices are constructed as described above, so when performing junction-down assembly, the heat sink and chip must be under pressure because striped protrusions with a height h are present on the chip surface directly above the operating area. Stress is added to the operating area when mounting the
This invention has been made to solve the problem of lowering the reliability of semiconductor devices, and aims to provide a semiconductor device in which no stress is applied to the operating area during junction-down assembly. shall be.

[Means to solve the problem]

In the semiconductor device according to the present invention, a metal layer that is thicker than the height of the striped convex portion directly above the active region is provided on an area other than the striped convex portion. The metal layer, which is thicker than the height of the live protrusions, prevents direct contact between the heat sink and the striped protrusions during junk showdown assembly, and does not apply stress to the active area.

〔Example〕

FIG. 1 is a sectional view of a semiconductor laser device showing an embodiment of the semiconductor device according to the present invention, and FIG. 2 is a sectional view showing the semiconductor laser device of FIG. 1 mounted on a heat sink using a junction down method. In a certain ◇ figure (1
) to (11) are the same as those shown in the conventional example shown in FIG. 3, so their explanation will be omitted.

(12) is the S102 film provided on the region other than the Zn-diffused p-type region (9), and (13) is the strig-shaped convex portion (8).
(14) is a heat sink, and (15) is a solder material.

Next, the operation will be explained. As shown in Figure 2, when assembling by the junction down method, the height of the metal layer (.13) is higher than the height of the striped protrusion (8), so the striped protrusion directly above the laser oscillation area (8)
does not come into direct contact with the heat sink (14) and does not apply stress to the laser oscillation region. Therefore, a decrease in reliability due to assembly can be prevented.

[Effect of the Invention J] The semiconductor device according to the present invention has a metal layer that is thicker than the height of the striped protrusions directly above the active region and is provided on the area other than the striped protrusions, so it can be mounted on a heat sink with a junction down. This has the effect of preventing deterioration in reliability due to stress being applied to the active area.

[Brief explanation of drawings]

1 is a sectional view showing a semiconductor laser device according to an embodiment of the semiconductor device according to the present invention; FIG. 2 is a sectional view showing the semiconductor laser device of FIG. 1 mounted on a heat sink with a junction down; FIG. 3 is a sectional view showing a conventional semiconductor laser device. In the figure, (1) is an n-GaAs substrate, and (2) is an n-GaAs substrate.
A1 (l3Ga6.7As first cladding layer, (3)
is un-GaAs active layer, (4) is p-Alo,3
Gao, tAs second cladding layer, (5) and (8) are striped convex portions, (6) is p-GaAs first contact layer, (force is n-GaAsl [flow blocking layer, (9) is Z
n-diffused p-type region, (10) is p-side electrode, (l1) is n-side electrode, (12) is S102 film, (13) is metal layer, (14)
) is a heat sink, and (l5) is a gluing material. In the diagram, the same reference numerals indicate the same or corresponding parts.

Claims (1)

[Claims] In a semiconductor device having an active region provided on a semiconductor substrate and in which the active region is configured to be more convex than other parts, a metal layer thicker than the height of the convex part is provided on the area other than the convex part. A semiconductor device characterized in that: