JPH02243966A - Voltage measuring instrument - Google Patents

Voltage measuring instrument

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Publication number
JPH02243966A
JPH02243966A JP1064205A JP6420589A JPH02243966A JP H02243966 A JPH02243966 A JP H02243966A JP 1064205 A JP1064205 A JP 1064205A JP 6420589 A JP6420589 A JP 6420589A JP H02243966 A JPH02243966 A JP H02243966A
Authority
JP
Japan
Prior art keywords
light
voltage
laser
measured
passing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1064205A
Other languages
Japanese (ja)
Inventor
Shinichi Wakana
伸一 若菜
Yoshiaki Goto
後藤 善朗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1064205A priority Critical patent/JPH02243966A/en
Publication of JPH02243966A publication Critical patent/JPH02243966A/en
Pending legal-status Critical Current

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  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)

Abstract

PURPOSE:To miniaturize a device and to lower the cost by interposing a light amplifier amplifying the light passing through an analyser between the analyser and a photoelectric conversion element. CONSTITUTION:A small-sized and low cost semiconductor laser is used for a laser beam source 10a, and the light amplifier 16 is interposed between a lens system 8b and a photodetector 12. The light passing through a light beam splitter 7 which is the analyser passes through the lens system 8b and is amplified to a sufficient level by the light amplifier 16, then subjected to photo-electric conversion by the photodetector 12, and an S/N of the detected signal S1 obtained therefrom is improved. Thus, the laser beam (l) with comparatively low intensity is enough for this application, and a voltage measurement with comparatively high accuracy is attained by using the semiconductor laser as the beam source 10a.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、電気光学結晶を用いて電圧測定を行う電圧
測定装置の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an improvement in a voltage measuring device that measures voltage using an electro-optic crystal.

〔従来の技術〕[Conventional technology]

LSI等の半導体素子を製造、利用する場合、素子内外
の信号波形を正確に測定してお(ことが必要不可欠とさ
れており、従来この様な測定には電気的な電圧測定装置
が利用されている。
When manufacturing and using semiconductor devices such as LSIs, it is essential to accurately measure signal waveforms inside and outside the device. Conventionally, electrical voltage measuring devices have been used for such measurements. ing.

しかし、近年の素子高速化に伴い、LSIテスタ等を用
いた電気的な電圧測定装置では、正確な測定が困難とな
りつつあり、そのため半導体素子基板結晶の電気光学効
果を用いた電圧測定装置が提案され、高速信号の計測が
可能なことが確認されている(例えば、J、A、Val
dsanls andG、mourou ’″5ubp
jcosecond electronles sai
ling :princlples and al)I
)licatiofl  IEEEJOURNAL O
FQUANTUM ELECTRONIC9,VOL、
QE 22.  pp、6978等)。
However, as the speed of devices increases in recent years, it is becoming difficult to make accurate measurements using electrical voltage measurement devices such as LSI testers. Therefore, a voltage measurement device that uses the electro-optic effect of semiconductor element substrate crystals has been proposed. It has been confirmed that it is possible to measure high-speed signals (for example, J, A, Val
dsanls andG, morou '''5ubp
jcosecond electronles sai
ling:princlples and al)I
)licatiofl IEEE JOURNAL O
FQUANTUM ELECTRONIC9, VOL,
QE 22. pp, 6978, etc.).

この電圧δ!1定装置は、微弱な信号電圧の変化を大出
力のパルスレーザを光源とし高強度の光を用いることで
補いつつ検出感度を維持するサンプリング方式であるた
め、装置の大型化が避けられなかった。
This voltage δ! Since the 1-constant device uses a sampling method that maintains detection sensitivity while compensating for weak signal voltage changes by using high-intensity light from a high-output pulsed laser as a light source, it was inevitable that the device would become larger. .

また、電圧)1定装置の他の従来例としては、第4図に
示されるように、本発明者等により先に提案された電圧
測定装置が知られている。
Further, as another conventional example of a voltage measuring device, a voltage measuring device previously proposed by the inventors of the present invention and others is known, as shown in FIG.

同図において、符号1は電子処理装置等の特性試験等で
電圧測定される被測定対象、符号2はその端子等の給電
部分である。
In the figure, reference numeral 1 indicates an object to be measured whose voltage is measured in a characteristic test of an electronic processing device, etc., and reference numeral 2 indicates a power supply portion such as a terminal thereof.

また、符号3はその各給電部分2に接合されるアルミや
金等のコンタクト用電極であり、各給電部分2毎にレー
ザビーム光lをクロストークすることができる。
Further, reference numeral 3 denotes a contact electrode made of aluminum, gold, etc., which is bonded to each power feeding portion 2, and allows crosstalk of the laser beam 1 to each power feeding portion 2.

符号4は、薄いGaAs結晶(面方位[100)厚さ2
00μm程度)等の電気光学結晶、5はインジュウム、
錫、酸化物からなる透明電極である。
The code 4 is a thin GaAs crystal (plane orientation [100), thickness 2
00 μm), etc., 5 is indium,
A transparent electrode made of tin and oxide.

コンタクト用電極3、電気光学結晶4及び透明電極5は
積層して形成され、この間に電圧が加わると、ポッケル
ス効果により電気光学結晶4内に誘電分極を生じ、軸方
位によって屈折率が変化する複屈折性の機能を有してい
る。
The contact electrode 3, the electro-optic crystal 4, and the transparent electrode 5 are formed in a laminated manner, and when a voltage is applied between them, dielectric polarization occurs in the electro-optic crystal 4 due to the Pockels effect, resulting in a complex structure in which the refractive index changes depending on the axial direction. It has a refractive function.

また、符号6は1/4波長板、符号7は偏向ビームスブ
リブタ、8g、8bはレンズ系であり、光軸変換をする
光学系である。
Further, the reference numeral 6 is a quarter-wave plate, the reference numeral 7 is a deflection beam distributor, and the reference numerals 8g and 8b are lens systems, which are optical systems for converting the optical axis.

符号9は、被n1定対象1の給電部分2にレーザビーム
光lを走査するX−Y偏向器、符号10はレーザビーム
光lを発射するYAGレーザや半導体レーザ等のレーザ
光源、符号11はX−Y偏向器9とレーザ光源10とを
制御する駆動制御系である。
Reference numeral 9 denotes an X-Y deflector that scans the laser beam l on the power feeding portion 2 of the n1 fixed object 1, code 10 denotes a laser light source such as a YAG laser or semiconductor laser that emits the laser beam l, and code 11 denotes a laser light source such as a YAG laser or a semiconductor laser that emits the laser beam l. This is a drive control system that controls the XY deflector 9 and the laser light source 10.

駆動制御系11は被測定対象1の電圧の周波数に応じて
、レーザビーム光lの発射間隔を被測定電圧の1周期の
整数分の1ずつ位相をずらしたパルス状にすることがで
きる。
The drive control system 11 can make the emission interval of the laser beam 1 into a pulse shape with the phase shifted by an integer fraction of one cycle of the voltage to be measured, depending on the frequency of the voltage of the object to be measured 1.

また、駆動制御系11は、信号処理系13から駆動制御
信号S2を人力し、偏向器を駆動制御することができる
Further, the drive control system 11 can manually input the drive control signal S2 from the signal processing system 13 to drive and control the deflector.

符号12は、その光量を受光し光電変換して検出信号S
1を出力する受光器、符号13は検出信号S1を処理す
る信号処理系、符号14は被測定対象11にクロック信
号等の試験信号S3を出力する測定試験制御系、符号1
5は電圧測定結果である。
Reference numeral 12 receives the amount of light, converts it photoelectrically, and generates a detection signal S.
Reference numeral 13 is a signal processing system that processes the detection signal S1, Reference numeral 14 is a measurement test control system that outputs a test signal S3 such as a clock signal to the object to be measured 11, Reference numeral 1
5 is the voltage measurement result.

この様な構成により、被測定対象1における−または二
以上の給電部分2に対してレーザビーム光1を走査し、
電気光学結晶の複屈折性を利用して被測定対象1の給電
部分2の電圧を光を媒介として測定することができる。
With such a configuration, the laser beam 1 is scanned over one or more power feeding parts 2 in the object to be measured 1,
By utilizing the birefringence of the electro-optic crystal, the voltage of the power feeding portion 2 of the object to be measured 1 can be measured using light as a medium.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

この様に、従来の電圧測定装置においては、光源10よ
り発せられる測定媒介光lを測定対象電圧の影響下にお
かれた電気光学結晶4中に通過させることにより、該媒
介光1に対して測定対象電圧に応じた偏向角変調をかけ
、該結晶通過光を検光子7へ導くことによりその変調成
分を光の強度情報として復調し、該検光子通過光を光電
素子12へ導くことにより、測定対象電圧に応じた電気
信号を得るように構成されている。
In this way, in the conventional voltage measuring device, by passing the measurement medium light l emitted from the light source 10 through the electro-optic crystal 4 placed under the influence of the voltage to be measured, the medium light 1 is By applying deflection angle modulation according to the voltage to be measured, guiding the light passing through the crystal to the analyzer 7, demodulating the modulated component as light intensity information, and guiding the light passing through the analyzer to the photoelectric element 12, It is configured to obtain an electrical signal according to the voltage to be measured.

しかしながら、n1定対象電圧が微弱な場合、偏向角変
調の度合いも小さくなるため、これを補うべく光源とし
て大型かつ高価な高強度パルスレ−ザを用いなければな
らず、そのため装置全体が大型化、高価格化するという
問題点があった。
However, when the n1 constant target voltage is weak, the degree of deflection angle modulation is also small, so a large and expensive high-intensity pulsed laser must be used as a light source to compensate for this, which increases the size of the entire device. There was a problem with the high price.

この発明は、上述の問題に鑑み成されたものであり、そ
の目的とするところは、この種の電圧測定装置における
小型化及び低価格化を可能とすることにある。
The present invention has been made in view of the above-mentioned problems, and its purpose is to enable miniaturization and cost reduction in this type of voltage measuring device.

〔課題を解決するための手段〕[Means to solve the problem]

この発明は、上記の目的を達成するために、光源(10
a)より発せられるn1定光(1)を、」1定対象電圧
の影響下に置かれた電気光学結晶(4)中に通過させる
ことにより、該測定光に対して測定対象電圧に応じた偏
光角変調をかけ、該結晶通過光を検光子(7)に導くこ
とによりその変調成分を光の強度情報として復調し、該
検光子通過光を光電素子(12)へ導くことにより、Δ
−1定対象電圧に応じた電気信号を得るようにした電圧
71FI定装置において、前記検光子(7)と光電変換
素子(12)との間に、検光子通過光を光増幅する光増
幅器(16)を介在させることを特徴とするものである
In order to achieve the above object, the present invention provides a light source (10
By passing the n1 constant light (1) emitted from a) through an electro-optic crystal (4) placed under the influence of a constant target voltage, the measurement light is polarized according to the voltage to be measured. By applying angular modulation and guiding the light passing through the crystal to an analyzer (7), the modulated component is demodulated as light intensity information, and by guiding the light passing through the analyzer to a photoelectric element (12), Δ
-1 In a voltage 71 FI determining device that obtains an electrical signal according to a constant target voltage, an optical amplifier ( 16).

〔作用〕[Effect]

この様な構成によれば、検光子(7)と充電変換素子(
12)との間に、検光子通過光を光増幅する光増幅器(
16)が介在されているため、検光子通過光が微弱であ
っても最終的に得られる電気信号のS/N比は良好なも
のとなり、そのため光源(10a)としては高価かつ大
型な高強度パルスレーザ等が不要となり、装置全体の小
型化及び低価格化が可能となる。
According to such a configuration, the analyzer (7) and the charge conversion element (
12), an optical amplifier (
16), even if the light passing through the analyzer is weak, the S/N ratio of the electrical signal finally obtained is good. There is no need for a pulse laser or the like, making it possible to downsize and lower the cost of the entire device.

〔実施例〕〔Example〕

第1実施例 第1図にこの発明の第1実施例を示す。 First example FIG. 1 shows a first embodiment of the invention.

尚、同図において、前記第3図の従来例と同一構成部分
については、同符号を付して説明は省略する。
Incidentally, in this figure, the same components as those of the conventional example shown in FIG.

この第1実施例装置の特徴は、レーザ光源10aとして
一般的に小型でかつ低価格な半導体レーザを用いるとと
もに、レンズ系8bと受光器12との間には、光増幅器
16を介在させている点にある。
The feature of this first embodiment device is that a generally small and low-cost semiconductor laser is used as the laser light source 10a, and an optical amplifier 16 is interposed between the lens system 8b and the light receiver 12. At the point.

この例では、光増幅器16として、両端面を無反射処理
した半導体レーザ素子が用いられている。
In this example, as the optical amplifier 16, a semiconductor laser element whose both end faces are subjected to anti-reflection treatment is used.

以上の構成によれば、検光子である光ビームスプリッタ
7の通過光は、レンズ系8bを経由し光増幅器16で十
分なレベルまで増幅された後、受光器12で光電変換さ
れ、受光器12から得られる検出信号S1のS/N比が
改善される。
According to the above configuration, the light passing through the optical beam splitter 7, which is an analyzer, passes through the lens system 8b and is amplified to a sufficient level by the optical amplifier 16, and then photoelectrically converted by the optical receiver 12. The S/N ratio of the detection signal S1 obtained from the detection signal S1 is improved.

そのため、レーザビーム光1としては比較的低強度のも
ので済み、レーザ光源10aとして半導体レーザを用い
つつも、比較的精度の良い電圧測定が可能となるのであ
る。
Therefore, the laser beam 1 only needs to be of relatively low intensity, and even though a semiconductor laser is used as the laser light source 10a, relatively accurate voltage measurement is possible.

第2実施例 次に、第2図にこの発明にの第2実施例を示す。Second example Next, FIG. 2 shows a second embodiment of this invention.

尚、同図において、前記第1図と同一構成部分について
は、同符号を付して説明は省略する。
In this figure, the same components as those in FIG.

この第2実施例装置の特徴は、第1図に示された第1実
施例の構成に加え、更にレンズ系8bと光増幅器16と
の間に、過飽和吸収体17を介在させた点にある。
The feature of this second embodiment device is that, in addition to the configuration of the first embodiment shown in FIG. .

以上の構成によれば、光増幅器16および過飽和吸収体
17を一体として見た場合の増幅特性は、第3図に示さ
れるように、非線型な増幅特性となる。
According to the above configuration, the amplification characteristic when the optical amplifier 16 and the supersaturable absorber 17 are viewed as one unit becomes a nonlinear amplification characteristic as shown in FIG. 3.

一般に、光ビームスプリッタ7の通過光、すなわち反射
光中には光量の変化分に比較して大きなりC成分が含ま
れており、高感度の受光器12を用いた場合には、飽和
等の影響により検出信号S1中に歪みが発生する虞があ
る。
Generally, the light passing through the optical beam splitter 7, that is, the reflected light, contains a C component that is large compared to the change in the light amount, and when a highly sensitive light receiver 12 is used, saturation etc. There is a possibility that distortion may occur in the detection signal S1 due to the influence.

そこで、上述したDC成分が、第3図のグラフに示され
る立ち上がり部分と一致するように非線型増幅特性を設
定しておけば、信号成分のみを選択的に増幅することが
でき、これによりS/N比の改善に加え、信号歪みをも
改善することができる。
Therefore, if the nonlinear amplification characteristics are set so that the DC component described above coincides with the rising portion shown in the graph of FIG. 3, it is possible to selectively amplify only the signal component. In addition to improving the /N ratio, signal distortion can also be improved.

〔発明の効果〕〔Effect of the invention〕

以上の通り、本発明によれば、検光子と光電変換素子と
の間に、検光子通過光を光増幅する光増幅器を介在させ
たことにより、光源として半導体レーザ素子等のような
小型で低価格なものが利用でき、この種の電圧Jlll
定装置の小型化及び低価格化が可能となる。
As described above, according to the present invention, by interposing an optical amplifier that optically amplifies the light passing through the analyzer between the analyzer and the photoelectric conversion element, a small and low-cost light source such as a semiconductor laser element is used as a light source. This kind of voltage is available at a low price
This makes it possible to downsize and lower the cost of fixed equipment.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の第1実施例のブロック図、第2図は本
発明の第2実施例のブロック図、第3図は第2実施例に
おける非線型増幅特性の説明図、 第4図は従来の電圧測定装置の一例を示すブロック図で
ある。 1・・・被?l−1定対象 2・・・給電部分 3・・・コンタクト用電極 4・・・電気光学結晶 5・・・透明電極 6・・・1/4波長板 7・・・光ビームスプリッタ 8a、8b・・・レンズ系 9・・・XY偏向器 10.10a・・・レーザ光源 11・・・駆動制御系 12・・・受光器 13・・・信号処理系 14・・・測定試験制御系 15・・・測定結果 16・・・光増幅器 17・・・過飽和吸収体 Sl・・・検出信号 S2・・・制御信号 S3・・・試験信号 ′l!測定対宋1 被測定対象1 本発明の第1実1洩例のブクノク図 第  1  図 本発明の第2実施例のプロ、り図 第  2  図
FIG. 1 is a block diagram of a first embodiment of the present invention, FIG. 2 is a block diagram of a second embodiment of the present invention, FIG. 3 is an explanatory diagram of nonlinear amplification characteristics in the second embodiment, and FIG. 1 is a block diagram showing an example of a conventional voltage measuring device. 1...Covered? l-1 constant object 2...power supply part 3...contact electrode 4...electro-optic crystal 5...transparent electrode 6...1/4 wavelength plate 7...light beam splitter 8a, 8b ... Lens system 9 ... XY deflector 10.10a ... Laser light source 11 ... Drive control system 12 ... Light receiver 13 ... Signal processing system 14 ... Measurement test control system 15. ...Measurement result 16...Optical amplifier 17...Supersaturated absorber Sl...Detection signal S2...Control signal S3...Test signal 'l! Measurement vs. Song Dynasty 1 Object to be measured 1 Book diagram of the first example of the present invention Figure 1 Professional diagram of the second embodiment of the present invention Figure 2

Claims (1)

【特許請求の範囲】 光源(10a)より発せられる測定光(1)を、測定対
象電圧の影響下に置かれた電気光学結晶(4)中に通過
させることにより、該測定光に対して測定対象電圧に応
じた偏光角変調をかけ、該結晶通過光を検光子(7)に
導くことによりその変調成分を光の強度情報として復調
し、該検光子通過光を光電素子(12)へ導くことによ
り、測定対象電圧に応じた電気信号を得るようにした電
圧測定装置において、 前記検光子(7)と光電変換素子(12)との間に、検
光子通過光を光増幅する光増幅器(16)を介在させる
ことを特徴とする電圧測定装置。
[Claims] By passing the measuring light (1) emitted from the light source (10a) through an electro-optic crystal (4) placed under the influence of the voltage to be measured, the measuring light is subjected to measurement. By applying polarization angle modulation according to the target voltage and guiding the light passing through the crystal to an analyzer (7), the modulated component is demodulated as light intensity information, and the light passing through the analyzer is guided to a photoelectric element (12). In the voltage measuring device which obtains an electric signal according to the voltage to be measured by this, an optical amplifier ( 16) A voltage measuring device characterized by intervening.
JP1064205A 1989-03-16 1989-03-16 Voltage measuring instrument Pending JPH02243966A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1064205A JPH02243966A (en) 1989-03-16 1989-03-16 Voltage measuring instrument

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1064205A JPH02243966A (en) 1989-03-16 1989-03-16 Voltage measuring instrument

Publications (1)

Publication Number Publication Date
JPH02243966A true JPH02243966A (en) 1990-09-28

Family

ID=13251338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1064205A Pending JPH02243966A (en) 1989-03-16 1989-03-16 Voltage measuring instrument

Country Status (1)

Country Link
JP (1) JPH02243966A (en)

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