JPH02250958A - Vacuum deposition equipment - Google Patents
Vacuum deposition equipmentInfo
- Publication number
- JPH02250958A JPH02250958A JP1070829A JP7082989A JPH02250958A JP H02250958 A JPH02250958 A JP H02250958A JP 1070829 A JP1070829 A JP 1070829A JP 7082989 A JP7082989 A JP 7082989A JP H02250958 A JPH02250958 A JP H02250958A
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- crucible
- deposition material
- pressure
- inert gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は真空蒸着装置に関するものである。[Detailed description of the invention] Industrial applications The present invention relates to a vacuum evaporation apparatus.
従来の技術
真空蒸着装置において、基板の入れ換えや内部のメンテ
ナンスのために真空容器中に大気を導入する時、いわゆ
るリークする時、蒸着材料が大気と接触することによっ
て大気中の酸素や水分と反応あるいはそれらを吸着して
汚染され、高品質の薄膜が形成できないという課題があ
った。Conventional technology In vacuum evaporation equipment, when air is introduced into the vacuum container for substrate replacement or internal maintenance, when there is a so-called leak, the evaporation material comes into contact with the air and reacts with oxygen and moisture in the air. Otherwise, there is a problem that a high-quality thin film cannot be formed due to contamination caused by adsorption of these substances.
この課題に対応するために従来は例えば特開昭63−2
70457号公報に示されているように真空容器に大気
を導入する時、蒸着材料が大気に接触しないように、蒸
着材料を真空雰囲気に保持する手段が設けられていた。In order to deal with this issue, for example, Japanese Patent Laid-Open No. 63-2
As shown in Japanese Patent No. 70457, a means for maintaining the vapor deposition material in a vacuum atmosphere was provided so that the vapor deposition material did not come into contact with the atmosphere when the atmosphere was introduced into the vacuum container.
発明が解決しようとする課題
しかしながら、上記従来の方法では蒸着材料の大気から
の汚染に対しては有効であるが、次に示す第3図におい
て説明する課題に対して有効ではない。Problems to be Solved by the Invention However, although the above-mentioned conventional method is effective against contamination of the vapor deposition material from the atmosphere, it is not effective against the problem described in FIG. 3 shown below.
イ
第3図において、蒸着が終了してるつぼ1に収入
納された蒸着材料2はるつぼ内壁3に接触°する部分か
ら凝固を始める。蒸着材料2が高融点金属等の場合には
通常るつは1には焼結したセラミックスが用いられる。In FIG. 3, the vapor deposition material 2, which has been deposited into the crucible 1 after completion of vapor deposition, begins to solidify at the portion where it contacts the inner wall 3 of the crucible. When the vapor deposition material 2 is a high melting point metal or the like, a sintered ceramic is usually used for the melt 1.
焼結したセラミックスの表面はるので、蒸着材料2はそ
の凹凸4に入り込んだ状態で凝固することになる。蒸着
材料2は温度低下による収縮を始める。そうするとるつ
ぼ1の凹凸4に入り込んだ蒸着材料2はるつぼ内壁3を
引きはがしながら蒸着材料2の中央部に引き寄せられて
第3図口のように蒸着材料2のるつぼ1と接触していた
面にはるつぼ材料の破断片6が付着することになる。Since the surface of the sintered ceramic is smooth, the vapor deposition material 2 solidifies while entering the unevenness 4. The vapor deposition material 2 begins to shrink due to a decrease in temperature. Then, the vapor deposition material 2 that has entered the unevenness 4 of the crucible 1 is pulled to the center of the vapor deposition material 2 while peeling off the inner wall 3 of the crucible, and the surface of the vapor deposition material 2 that was in contact with the crucible 1 is drawn as shown in the opening in Figure 3. Broken pieces 6 of the crucible material will adhere.
また、仮にるつぼ10表面が滑らかであっても蒸着材料
2とるつぼ1との化学的な親和力等によってもこのよう
な引きはがしが発生することがある。蒸着のために再び
蒸着材料2を加熱溶融すると、セラミックスは通常金属
よりも軽いので蒸着材料2の表面に第3図ハのように前
記破断片6が浮くことになる。Further, even if the surface of the crucible 10 is smooth, such peeling may occur due to chemical affinity between the vapor deposition material 2 and the crucible 1. When the vapor deposition material 2 is heated and melted again for vapor deposition, the broken pieces 6 float on the surface of the vapor deposition material 2 as shown in FIG. 3C, since ceramics are usually lighter than metals.
そうすると実効的に蒸着材料2の蒸発面積が小さくなっ
て成膜速度が低下したり、あるいは電子ビーム蒸着の場
合には、破断片6に電子ビームが当り、破断片6が蒸発
して薄膜に不純物として入り込み、薄膜の品質を劣化さ
せる等、従来の方法では対応できない大きな課題があっ
た。This effectively reduces the evaporation area of the evaporation material 2 and reduces the film formation rate, or in the case of electron beam evaporation, the electron beam hits the fragments 6, causing the fragments 6 to evaporate and impurities in the thin film. There were major issues that could not be addressed with conventional methods, such as the intrusion of particles and the deterioration of the quality of thin films.
そこで本発明はるつぼ内壁が引きはがされることを防止
することによって前記課題を解決し、高品質の薄膜を形
成可能な真空蒸着装置を提供することを目的とするもの
である。SUMMARY OF THE INVENTION An object of the present invention is to solve the above problem by preventing the inner wall of the crucible from being peeled off, and to provide a vacuum evaporation apparatus capable of forming a high-quality thin film.
課題を解決するだめの手段
そして上記課題を解決するため本発明は、蒸着材料を収
納するるつぼを密閉状態と開放状態とに選択的に保持可
能な密閉手段により密閉保持した状態で蒸着材料を加熱
するとともに、その密閉容器中に不活性ガスを供給する
ものである。Means for Solving the Problems And in order to solve the above problems, the present invention heats the vapor deposition material in a state in which the crucible containing the vapor deposition material is kept hermetically sealed by a sealing means that can selectively maintain the crucible in a closed state and an open state. At the same time, an inert gas is supplied into the sealed container.
作 用
本発明は上記した手段により、蒸着材料の凝固収縮を防
止してるつぼ内壁が引きはがされないようにして前記課
題を解決すると共に、不活性ガスを供給して前記密閉容
器内の圧力を高くして加熱された蒸着材料の蒸発を抑制
または防止できる状態にする。したがって加熱による蒸
発材料の消耗も密閉容器の内部に蒸着材料の蒸気が付着
して汚れることも少ない。Function The present invention solves the above problems by preventing the solidification and shrinkage of the vapor deposition material so that the inner wall of the crucible is not peeled off, and also by supplying an inert gas to reduce the pressure inside the closed container. The temperature is raised to a state where evaporation of the heated vapor deposition material can be suppressed or prevented. Therefore, the consumption of the evaporation material due to heating and the deposition of vapor of the evaporation material on the inside of the closed container are less likely to cause contamination.
実施例 以下本発明の一実施例を図面に従って説明する。Example An embodiment of the present invention will be described below with reference to the drawings.
第1図は本発明の全体構成を示す断面図である。FIG. 1 is a sectional view showing the overall configuration of the present invention.
第1図において10は真空容器で上部には基板11を支
持する基板取付台27が固定されている。12は蒸着材
料13を収納するるつぼで14は断熱材16で支持され
だヒータである。17は不活性ガス通路、18は真空計
、19は弁である。21は凹み21−1を形成した開閉
用の蓋で軸22に固定され、軸22の一端にはピニオン
28が固定されている。軸22は両端を軸受23により
回転可能に支持されている。ビニオン28は真空容器1
0の外側に設けたエアシリンダ24の矢印C,D方向の
往復動作によりその動作がラック26に伝達され、矢印
E、F方向に回動する。なお真空容器1oを排気する公
知の排気手段は省略しである。In FIG. 1, reference numeral 10 denotes a vacuum vessel, and a substrate mount 27 for supporting the substrate 11 is fixed to the upper part. 12 is a crucible for storing a vapor deposition material 13, and 14 is a heater supported by a heat insulating material 16. 17 is an inert gas passage, 18 is a vacuum gauge, and 19 is a valve. Reference numeral 21 denotes an opening/closing lid having a recess 21-1, which is fixed to a shaft 22, and a pinion 28 is fixed to one end of the shaft 22. The shaft 22 is rotatably supported by bearings 23 at both ends. Binion 28 is vacuum container 1
By the reciprocating motion of the air cylinder 24 provided on the outside of the rack 24 in the directions of arrows C and D, the motion is transmitted to the rack 26, which rotates in the directions of arrows E and F. Note that a known evacuation means for evacuating the vacuum container 1o is omitted.
次に動作について説明する。Next, the operation will be explained.
成膜は、エアシリンダ24を矢印C方向に動作させて蓋
21を矢印E方向に開けた状態で次のように行う。ヒー
タ14に通電してるつぼ12を介して蒸着材料13を加
熱し、蒸発させて前記基板11に薄膜を形成する。蒸着
材料13が高融点金属等の蒸気圧の高い材料の場合は、
図示しないが公知の電子ビーム加熱手段を用いても、ま
た他の加熱手段であっても、またそれらとヒータ14を
併用してもよい。Film formation is performed as follows with the air cylinder 24 operated in the direction of arrow C and the lid 21 opened in the direction of arrow E. The heater 14 is energized to heat the vapor deposition material 13 through the crucible 12 and evaporate it to form a thin film on the substrate 11 . If the vapor deposition material 13 is a material with high vapor pressure such as a high melting point metal,
Although not shown, a known electron beam heating means may be used, or other heating means may be used, or the heater 14 may be used in combination with them.
次に基板11の入れ換えやメンテナンス等で真空容器1
0をリークする時は、ヒータ14に通電して蒸着材料1
3の溶融を維持した状態で、まずエアシリンダ24を矢
印り方向に動作させ、蓋21をF方向に回転させてOり
ング20に抑圧接触させる。次に真空容器10をリーク
する。そして真空容器内が大気圧になるにつれて真空容
器内圧力が蓋21で密閉した空間26の圧力よりも高く
なり最後に蓋21は大気圧で押圧された状態になりリー
ス16に密着固定される。次に弁19を開いて溶融した
蒸着材料13と反応しないいわゆる不活性ガスを空間2
6の圧力を真空計18で計測しつつ導入し、所要圧力に
なれば弁19を閉じる。Next, the vacuum container 1 is
When leaking 0, the heater 14 is energized and the vapor deposition material 1 is leaked.
3, while maintaining the melting state, the air cylinder 24 is first operated in the direction of the arrow, and the lid 21 is rotated in the direction F to bring it into pressure contact with the O-ring 20. Next, the vacuum container 10 is leaked. Then, as the pressure inside the vacuum container becomes atmospheric, the pressure inside the vacuum container becomes higher than the pressure in the space 26 sealed by the lid 21, and finally the lid 21 is pressed by atmospheric pressure and is tightly fixed to the wreath 16. Next, the valve 19 is opened and a so-called inert gas that does not react with the melted vapor deposition material 13 is introduced into the space 2.
6 is introduced while measuring it with a vacuum gauge 18, and when the required pressure is reached, the valve 19 is closed.
空間26へ導入する不活性ガスの圧力が高くなるにつれ
て蒸着材料13の蒸発は抑制され、蒸着材料13の蒸気
圧よりも高くなるとその蒸発は完全に抑止される。通常
その蒸気圧は蒸着材料13の種類や加熱温度によシ異な
るが、10−5Torr〜10Torrであるから空間
26の圧力が大気圧よりも高くなって蓋21が開くこと
はない。As the pressure of the inert gas introduced into the space 26 increases, the evaporation of the vapor deposition material 13 is suppressed, and when the pressure becomes higher than the vapor pressure of the vapor deposition material 13, the evaporation is completely suppressed. Usually, the vapor pressure varies depending on the type of vapor deposition material 13 and the heating temperature, but since it is 10 -5 Torr to 10 Torr, the pressure in the space 26 will not become higher than atmospheric pressure and the lid 21 will not open.
したがって、蒸着材料13は凝固収縮を起こさないので
従来のように、るつぼ12の内壁を引きはがすことはな
い。また、蒸着材料13が空間26へ蒸発して蒸着材料
13が消耗したり、蓋21に膜が付着して汚れる等の不
都合が発生することも少ない。Therefore, since the vapor deposition material 13 does not undergo solidification shrinkage, the inner wall of the crucible 12 is not peeled off as in the conventional case. Furthermore, problems such as the vapor deposition material 13 evaporating into the space 26 and being consumed, and the lid 21 being contaminated with a film attached thereto are less likely to occur.
次に本発明の他の実施例について説明する。Next, other embodiments of the present invention will be described.
第1図と共通する構成要素には同一番号を付し、説明を
省略する。Components common to those in FIG. 1 are given the same numbers and their explanations will be omitted.
前記実施例においてはるっぽ12を密閉するための手段
の一要素に回動式の蓋21を用いたがスライド式の蓋で
あってもよい。In the embodiment described above, a rotatable lid 21 is used as one element of the means for sealing the Haruppo 12, but a sliding lid may also be used.
第2図において、3oは公知のゲートバルブ31により
仕切られた副室である。32はエアシリンダ33とハー
ス16の連結棒である。蒸着はゲートバルブ31を開い
た状態で、エアシリンダ33によりハース16を真空容
器10内の破線状態まで持ち上げて行い、真空容器1o
をリークする時はエアシリンダ33によりハース16を
副室3゜内の実線位置まで下げ、ゲートバルブ31を閉
じて前記と同様ヒータ14で蒸着材料13を加熱し、不
活性ガスを導入すればよい。このような構成にすると真
空容器10内にハース16が残らないので真空容器10
内のメンテナンス等を容易に行えるという利点がある。In FIG. 2, 3o is a subchamber partitioned off by a known gate valve 31. 32 is a connecting rod between the air cylinder 33 and the hearth 16. Vapor deposition is carried out by lifting the hearth 16 up to the broken line inside the vacuum vessel 10 with the air cylinder 33 with the gate valve 31 open.
When leaking, the hearth 16 is lowered to the solid line position within 3 degrees of the sub-chamber by the air cylinder 33, the gate valve 31 is closed, the vapor deposition material 13 is heated by the heater 14 as described above, and an inert gas is introduced. . With this configuration, the hearth 16 does not remain inside the vacuum container 10, so the vacuum container 10
It has the advantage that internal maintenance etc. can be easily performed.
以上において蒸着材料の混同収縮を防止するための加熱
手段はヒータ14としたが、それに限るものではなく誘
導加がであっても電子ビーム加熱であってもよい。In the above description, the heater 14 is used as a heating means for preventing the evaporation material from shrinking due to confusion, but the present invention is not limited to this, and induction heating or electron beam heating may be used.
発明の効果
以上、述べたように本発明によれば真空容器内をリーク
する時に蒸着材料を加熱しながらるつぼを密閉すると共
に不活性ガスを供給し、密閉容器内を加熱された蒸着材
料の蒸発を抑制または抑止することにより、蒸着材料の
凝固収縮によるるつぼ内壁の引きはがしを防止すること
ができる。その結果、るつぼ内壁より引きはがされた破
断片による蒸着材料の汚染を防止して安定した高品質の
薄膜を形成することができる。Effects of the Invention As described above, according to the present invention, when a leak occurs in a vacuum container, the crucible is sealed while heating the vapor deposition material, and an inert gas is supplied, thereby evaporating the heated vapor deposition material inside the sealed container. By suppressing or suppressing this, it is possible to prevent the inner wall of the crucible from being peeled off due to solidification shrinkage of the vapor deposition material. As a result, it is possible to prevent contamination of the vapor deposition material by fragments torn off from the inner wall of the crucible, and to form a stable, high-quality thin film.
第1図は本発明の一実施例の一部断面正面図、第2図は
本発明の他の実施例の一部断面正面図、第3図は従来例
を説明するための断面を示す正面図である。
1o・・・・・・真空容器、11・・・・・・基板、1
2・・・・・・るつぼ、13・・・・・・蒸着材料、1
4・・・・・・ヒータ、17・・・・・・不活性ガス通
路、18・・・・・・真空計、19・・・・・・弁、2
o・・・・・・oリング、21・・・・・・蓋。
代理人の氏名 弁理士 粟 野 重 孝 ほか1名蕗
図
第
図
(イ)Fig. 1 is a partially sectional front view of an embodiment of the present invention, Fig. 2 is a partially sectional front view of another embodiment of the invention, and Fig. 3 is a front view showing a cross section for explaining a conventional example. It is a diagram. 1o...Vacuum container, 11...Substrate, 1
2... Crucible, 13... Vapor deposition material, 1
4...Heater, 17...Inert gas passage, 18...Vacuum gauge, 19...Valve, 2
o...o-ring, 21...lid. Name of agent: Patent attorney Shigetaka Awano and one other person
Claims (2)
びるつぼと、前記るつぼに収納された蒸着材料を加熱し
て蒸着せしめ前記基板に薄膜を形成する第1の加熱手段
と、前記るつぼを密閉状態と開放状態とに選択的に保持
可能な密閉手段と、前記るつぼが前記密閉手段により密
閉保持されている状態で前記蒸着材料を加熱する第2の
加熱手段と、前記密閉容器中に不活性ガスを供給する手
段とから成る真空蒸着装置。(1) A vacuum container, a substrate and a crucible provided in the vacuum container, a first heating means for heating and vapor depositing the vapor deposition material stored in the crucible to form a thin film on the substrate, and the crucible. a sealing means capable of selectively holding the crucible in a closed state and an open state; a second heating means for heating the vapor deposition material while the crucible is held tightly sealed by the sealing means; and a means for supplying an inert gas.
請求項1記載の真空蒸着装置。(2) The vacuum evaporation apparatus according to claim 1, wherein the first and second heating means are the same heating means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1070829A JPH02250958A (en) | 1989-03-23 | 1989-03-23 | Vacuum deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1070829A JPH02250958A (en) | 1989-03-23 | 1989-03-23 | Vacuum deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02250958A true JPH02250958A (en) | 1990-10-08 |
Family
ID=13442858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1070829A Pending JPH02250958A (en) | 1989-03-23 | 1989-03-23 | Vacuum deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02250958A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011077662A1 (en) * | 2009-12-21 | 2011-06-30 | 株式会社アルバック | Vacuum deposition apparatus and maintenance method therefor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6230875A (en) * | 1985-07-31 | 1987-02-09 | Ulvac Corp | Evaporating source housing chamber for batch-operated vacuum deposition device |
| JPS63270457A (en) * | 1987-04-24 | 1988-11-08 | Matsushita Electric Ind Co Ltd | Thin film forming equipment |
-
1989
- 1989-03-23 JP JP1070829A patent/JPH02250958A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6230875A (en) * | 1985-07-31 | 1987-02-09 | Ulvac Corp | Evaporating source housing chamber for batch-operated vacuum deposition device |
| JPS63270457A (en) * | 1987-04-24 | 1988-11-08 | Matsushita Electric Ind Co Ltd | Thin film forming equipment |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011077662A1 (en) * | 2009-12-21 | 2011-06-30 | 株式会社アルバック | Vacuum deposition apparatus and maintenance method therefor |
| JP5619028B2 (en) * | 2009-12-21 | 2014-11-05 | 株式会社アルバック | Vacuum deposition apparatus and maintenance method thereof |
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