JPH02253152A - Method and device for flaw detection - Google Patents

Method and device for flaw detection

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Publication number
JPH02253152A
JPH02253152A JP7579289A JP7579289A JPH02253152A JP H02253152 A JPH02253152 A JP H02253152A JP 7579289 A JP7579289 A JP 7579289A JP 7579289 A JP7579289 A JP 7579289A JP H02253152 A JPH02253152 A JP H02253152A
Authority
JP
Japan
Prior art keywords
magneto
magnetic field
effect element
optic effect
flaw detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7579289A
Other languages
Japanese (ja)
Other versions
JPH0820421B2 (en
Inventor
Michiaki Ishihara
道章 石原
Takahide Sakamoto
隆秀 坂本
Takahisa Numata
沼田 卓久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Sumitomo Metal Industries Ltd
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Filing date
Publication date
Application filed by Sumitomo Metal Industries Ltd filed Critical Sumitomo Metal Industries Ltd
Priority to JP7579289A priority Critical patent/JPH0820421B2/en
Publication of JPH02253152A publication Critical patent/JPH02253152A/en
Publication of JPH0820421B2 publication Critical patent/JPH0820421B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、磁気光学効果素子を用いて被探傷材の漏洩磁
束を検出することにより探傷する探傷方法及び探傷装置
に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a flaw detection method and a flaw detection apparatus for detecting flaws by detecting leakage magnetic flux of a material to be flaw-tested using a magneto-optic effect element.

〔従来の技術〕[Conventional technology]

従来、強磁性体の表面疵探、傷方法としては被探傷材を
磁化し、欠陥による漏洩磁束に磁粉を吸着させ視覚的に
検出する磁粉探傷法、あるいは漏洩磁界をホール素子、
コイル等を用いて電気的に検出する漏洩磁束探傷法が広
く用いられている。
Conventionally, methods for detecting surface flaws in ferromagnetic materials include the magnetic particle flaw detection method, in which the material to be flawed is magnetized, magnetic particles are attracted to the leakage magnetic flux caused by the defect, and visually detected, or the leakage magnetic field is detected using a Hall element,
A leakage magnetic flux flaw detection method that electrically detects flaws using a coil or the like is widely used.

しかし前者の方法は低分解能であるが欠陥深さに対する
定量性に優れている。一方、後者の方法はホール素子等
の大きさ以下の欠陥検出が難しいという問題がある。
However, although the former method has low resolution, it is excellent in quantifying defect depth. On the other hand, the latter method has a problem in that it is difficult to detect defects smaller than the size of a Hall element or the like.

この対策として近年、磁界を磁気光学効果素子を用いて
検出する磁気光学探傷法が注目されている。この磁気光
学探傷法は欠陥からの漏洩磁界が磁気光学効果素子に与
えられると、磁気光学効果素子を透過する直線偏光の偏
光面が磁界のうち、該光に平行方向成分の大きさに比例
して回転する現象、所謂ファラデー効果を利用する方法
である。
As a countermeasure to this problem, magneto-optical flaw detection, which detects a magnetic field using a magneto-optic effect element, has attracted attention in recent years. In this magneto-optical flaw detection method, when a leakage magnetic field from a defect is applied to a magneto-optic effect element, the polarization plane of linearly polarized light that passes through the magneto-optic effect element is proportional to the magnitude of the component of the magnetic field that is parallel to the light. This method uses the so-called Faraday effect.

第7図は従来の磁気光学探傷法(0,L、Fitzpa
tric;11th World Conf、 on 
NDT、 1985 Vol、1、p186 )の探傷
状態を示す模式図である。漏洩磁束を検出する検出ヘッ
ド16を強磁性の被探傷材Mの表面に配置しており、検
出ヘッド16からの反射光が入射する検光子19を設け
ている。
Figure 7 shows the conventional magneto-optical flaw detection method (0, L, Fitzpa
tric;11th World Conf, on
NDT, 1985 Vol, 1, p186) is a schematic diagram showing the flaw detection state. A detection head 16 for detecting leakage magnetic flux is placed on the surface of the ferromagnetic material M to be tested, and an analyzer 19 is provided on which the reflected light from the detection head 16 enters.

検出ヘッド16は透光性を備えた基板16aにおける表
裏両面に磁気光学効果素子16b、 16cを、また被
探傷材Mと対向する下面には反射膜16dを形成すると
ともに、周囲にバイアス磁化用コイル16eを巻回して
構成しである。
The detection head 16 has magneto-optical effect elements 16b and 16c formed on both the front and back sides of a transparent substrate 16a, a reflective film 16d formed on the lower surface facing the material M to be detected, and a bias magnetizing coil surrounding the substrate 16a. 16e is wound.

被探傷材Mの欠陥Maを検出する場合は、被探傷材Mに
磁界を与えた状態の被探傷材Mの表面に検出ヘッド16
を近接して臨ませ、直線偏光させた光PLを検出ヘッド
16の上面側から磁気光学効果素子16cへ投射する。
When detecting a defect Ma in the material M to be tested, the detection head 16 is placed on the surface of the material M to be tested while applying a magnetic field to the material M to be tested.
The detection head 16 projects linearly polarized light PL onto the magneto-optic effect element 16c from the upper surface side of the detection head 16.

投射した光PLは磁気光学効果素子16c、基板16a
、磁気光学効果素子16bを通過して反射膜16dで反
射し、再び磁気光学効果素子16b。
The projected light PL is transmitted through the magneto-optic effect element 16c and the substrate 16a.
, passes through the magneto-optic effect element 16b, is reflected by the reflective film 16d, and returns to the magneto-optic effect element 16b.

基板16a、磁気光学効果素子16cを透過した後、検
光子19に達することになり、それを検光子19を通し
て観察する。
After passing through the substrate 16a and the magneto-optic effect element 16c, the light reaches the analyzer 19 and is observed through the analyzer 19.

被探傷材Mに疵が存在し、漏洩磁束が生していると、こ
れによる漏洩磁界が磁気光学効果素子16b16cに与
えられ、この漏洩磁界が与えられた磁気光学効果素子1
6b、 16cを透過した直線偏光の光PLは印加磁界
強度に相応して偏光面が回転し、検光子19を通った光
は漏洩磁界に相応して光量が変化した状態となり、この
光量変化を捉えることによって被探傷材Mの疵の有無が
検出できる。
When a flaw exists in the material M to be detected and leakage magnetic flux is generated, the leakage magnetic field due to this is applied to the magneto-optic effect element 16b16c, and the magneto-optic effect element 1 to which this leakage magnetic field is applied is applied.
The plane of polarization of the linearly polarized light PL transmitted through 6b and 16c rotates in accordance with the strength of the applied magnetic field, and the amount of light passing through the analyzer 19 changes in accordance with the leakage magnetic field. By capturing the flaws, the presence or absence of flaws in the material M to be detected can be detected.

前記磁気光学効果素子16b、16cは第8図に示す如
き角形(ヒステリシス)磁気特性を有している。
The magneto-optic effect elements 16b and 16c have rectangular (hysteresis) magnetic characteristics as shown in FIG.

この角形磁気特性により磁気光学効果素子16b、16
cに与えた磁界Hが磁気光学効果素子16b、 16c
が有する保磁力+HCに達するまではその偏光面回転角
θ、が一θ。に保持される。
Due to this square magnetic characteristic, the magneto-optic effect elements 16b, 16
The magnetic field H applied to the magneto-optic effect elements 16b and 16c
Until it reaches the coercive force + HC that it has, its polarization plane rotation angle θ is 1 θ. is maintained.

したがって、磁気光学効果素子16b、 16cに、そ
の保磁力Hcより振幅が小さいバイアス磁界 H8を与
えておくと、被探傷材Mの欠陥により漏洩磁界ΔHが生
じた場合、それがバイアス磁界 Hoに加わって磁気光
学効果素子16cの保磁力+Hcに達したときに偏光面
回転角θ、の極性が変化し、+θ0となる。それにより
被探傷材Mの欠陥M3を検出することになる。しかし乍
ら、漏洩磁界ΔHがHc−H,より大きくなっても偏光
面回転角θ1はθ。のままで変化しないから、漏洩磁界
、つまり欠陥を定量的に評価し得ず、被探傷材Mの欠陥
M8の有無のみの検査に用いているにすぎない。
Therefore, if a bias magnetic field H8 having an amplitude smaller than the coercive force Hc is applied to the magneto-optic effect elements 16b and 16c, when a leakage magnetic field ΔH is generated due to a defect in the material M to be tested, it will be added to the bias magnetic field Ho. When the coercive force of the magneto-optic effect element 16c reaches +Hc, the polarity of the polarization plane rotation angle θ changes to +θ0. Thereby, the defect M3 of the material M to be tested is detected. However, even if the leakage magnetic field ΔH becomes larger than Hc-H, the polarization plane rotation angle θ1 remains θ. Since it remains unchanged and does not change, it is not possible to quantitatively evaluate the leakage magnetic field, that is, the defect, and it is only used to inspect the presence or absence of the defect M8 in the material M to be detected.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

前述したように磁気光学効果素子を漏洩磁束探傷に適用
した場合には、 (1)  漏洩磁界が重畳された磁気光学効果素子への
印加磁場が磁気光学効果素子の保磁力以上に達するまで
は偏光面回転角の極性が変化せず検出感度が低い。
As mentioned above, when a magneto-optic effect element is applied to leakage magnetic flux flaw detection, (1) until the applied magnetic field to the magneto-optic effect element on which the leakage magnetic field is superimposed reaches the coercive force of the magneto-optic effect element or more, the polarized light is The polarity of the surface rotation angle does not change and the detection sensitivity is low.

(2)磁気光学効果素子が角形磁気特性を有するため、
被探傷材の欠陥を定量的に評価できないという問題があ
る。
(2) Since the magneto-optic effect element has square magnetic characteristics,
There is a problem in that it is not possible to quantitatively evaluate defects in the material being tested.

したがって、探傷によって鋼材の品質をより向上させる
上で大きな障害となっている。
Therefore, this is a major obstacle to further improving the quality of steel materials through flaw detection.

本発明は斯かる問題に鑑み、磁気光学効果素子を用いて
被探傷材の欠陥を高感度、定量的に検出できる探傷方法
及び探傷装置を提供することを目的とする。
In view of such problems, it is an object of the present invention to provide a flaw detection method and a flaw detection apparatus that can detect defects in a material to be flaw-detected with high sensitivity and quantitatively using a magneto-optic effect element.

〔課題を解決するための手段〕[Means to solve the problem]

第1発明は、磁気光学効果素子を用いて被探傷材の欠陥
を検出する探傷方法において、前記磁気光学効果素子に
、それが有する保磁力より大きい振幅を有する交流磁界
を与えて、その偏光面回転角の極性変化に相応する矩形
波の位相又は時間幅から欠陥を検出することを特徴とす
る。
A first aspect of the present invention is a flaw detection method for detecting defects in a material to be tested using a magneto-optic effect element, in which an alternating current magnetic field having an amplitude larger than a coercive force of the magneto-optic effect element is applied to the magneto-optic effect element, so that the polarization plane of the flaw detection method is It is characterized by detecting defects from the phase or time width of a rectangular wave corresponding to a change in polarity of the rotation angle.

第2発明は、磁気光学効果素子を用いて被探傷材の欠陥
を検出する探傷装置において、前記磁気光学効果素子に
、それが有する保磁力より大きい振幅の交流磁界を与え
る磁化器及び前記交流磁界に同期する矩形波と前記磁気
光学効果素子の偏光面回転角の極性変化に相応する矩形
波との位相差を測定する位相差測定回路を備えることを
特徴とする。
A second invention provides a flaw detection apparatus for detecting defects in a material to be flaw-detected using a magneto-optic effect element, including a magnetizer that applies an alternating current magnetic field to the magneto-optical effect element with an amplitude larger than a coercive force thereof; The present invention is characterized in that it includes a phase difference measuring circuit that measures a phase difference between a rectangular wave synchronized with and a rectangular wave corresponding to a polarity change of the rotation angle of the polarization plane of the magneto-optic effect element.

第3発明は、磁気光学効果素子を用いて被探傷材の欠陥
を検出する探傷装置において、前記磁気光学効果素子に
、それが有する保磁力より大きい振幅の交流磁界を与え
る磁化器及び前記交流磁界に同期する矩形波の時間幅と
前記磁気光学効果素子の偏光面回転角の極性変化に相応
する矩形波の時間幅との差を測定する時間幅差測定回路
を備えることを特徴とする。
A third aspect of the present invention provides a flaw detection apparatus that uses a magneto-optic effect element to detect defects in a material to be tested, including a magnetizer that applies an alternating magnetic field to the magneto-optical element with an amplitude larger than a coercive force thereof; The present invention is characterized by comprising a time width difference measuring circuit that measures the difference between the time width of a rectangular wave synchronized with the time width of the rectangular wave and the time width of the rectangular wave corresponding to the polarity change of the rotation angle of the polarization plane of the magneto-optic effect element.

第4発明は磁気光学効果素子を用いて被探傷材の欠陥を
検出する探傷方法において、前記磁気光学効果素子に、
それが有する保磁力より大きい振幅を有する交流磁界を
与えて、前記交流磁界が前記保磁力を超える時点の磁化
電流を求めて、該磁化電流から欠陥を検出することを特
徴とする。
A fourth invention is a flaw detection method for detecting defects in a material to be tested using a magneto-optic effect element, in which the magneto-optic effect element includes:
It is characterized in that an alternating magnetic field having an amplitude larger than the coercive force of the magnet is applied, a magnetizing current at a point in time when the alternating magnetic field exceeds the coercive force is determined, and defects are detected from the magnetizing current.

第5発明は磁気光学効果素子を用いて被探傷材の欠陥を
検出する探傷装置において、前記磁気光学効果素子に、
それが有する保磁力より大きい振幅の交流磁界を与える
磁化器と、交流磁界が磁気光学効果素子の保磁力を超え
た時点の前記磁化器が出力する磁化電流を測定する磁化
電流測定回路とを備えることを特徴とする。
A fifth invention is a flaw detection apparatus for detecting defects in a material to be tested using a magneto-optic effect element, in which the magneto-optic effect element includes:
A magnetizer that provides an alternating magnetic field with an amplitude larger than the coercive force it has, and a magnetizing current measuring circuit that measures the magnetizing current output by the magnetizer at the time when the alternating magnetic field exceeds the coercive force of the magneto-optic effect element. It is characterized by

〔作用〕[Effect]

第1発明では、磁気光学効果素子に、その保磁力以上の
振幅の交流磁界を与える。交流磁界が保磁力に達すると
偏光面回転角の極性が変化する。
In the first invention, an alternating magnetic field having an amplitude greater than the coercive force of the magneto-optic effect element is applied to the magneto-optic effect element. When the alternating magnetic field reaches the coercive force, the polarity of the polarization plane rotation angle changes.

被探傷材の欠陥で生じる漏洩磁界により交流磁界が振幅
変調されると、偏光面回転角の変化に相応する矩形波の
位相又は時間幅が被探傷材の欠陥に応じて変わる。
When the AC magnetic field is amplitude-modulated by a leakage magnetic field generated by a defect in the material to be tested, the phase or time width of the rectangular wave corresponding to a change in the rotation angle of the plane of polarization changes depending on the defect in the material to be tested.

第2発明では、磁化器は磁気光学効果素子に、その保磁
力以上の振幅の交流磁界を与える。交流磁界が保磁力に
達すると偏光面回転角が変わる。
In the second invention, the magnetizer applies an alternating magnetic field to the magneto-optic effect element with an amplitude greater than its coercive force. When the alternating magnetic field reaches coercive force, the rotation angle of the plane of polarization changes.

位相差測定回路は、交流磁界に関連する矩形波と偏光面
回転角の変化に関連する矩形波との位相差を求める。位
相差は被探傷材の欠陥に応じて変わる。
The phase difference measurement circuit determines the phase difference between a rectangular wave related to the alternating magnetic field and a rectangular wave related to a change in the polarization plane rotation angle. The phase difference changes depending on the defects in the material being tested.

第3発明では磁化器は磁気光学効果素子に、その保磁力
以上の振幅の交流磁界を与える。交流磁界が保磁力に達
すると偏光面回転角が変わる。時間幅差測定回路は、交
流磁界に関連する矩形波の時間幅と、偏光面回転角の変
化に関連する矩形波の時間幅との時間幅差を求める。そ
の時間幅差は被探傷材の欠陥に応じて変わる。
In the third invention, the magnetizer applies an alternating magnetic field to the magneto-optic effect element with an amplitude greater than its coercive force. When the alternating magnetic field reaches coercive force, the rotation angle of the plane of polarization changes. The time width difference measurement circuit determines a time width difference between a time width of a rectangular wave related to an alternating magnetic field and a time width of a rectangular wave related to a change in a polarization plane rotation angle. The time width difference changes depending on the defect in the material to be detected.

第4発明では、磁気光学効果素子に、その保磁力以上の
振幅の交流磁界を与える。漏洩磁界により振幅変調され
た交流磁界が保磁力に達したときに、交流磁界を発生さ
せている磁化電流と、保磁力に等しい交流磁界を発生さ
せる電流とに差が生じる。その電流差は被探傷材の欠陥
に応じて変わる。
In the fourth invention, an alternating magnetic field having an amplitude greater than the coercive force of the magneto-optic effect element is applied to the magneto-optic effect element. When the alternating magnetic field whose amplitude is modulated by the leakage magnetic field reaches the coercive force, a difference occurs between the magnetizing current that generates the alternating magnetic field and the current that generates the alternating magnetic field equal to the coercive force. The current difference changes depending on the defects in the material being tested.

第5発明では、磁化器により磁気光学効果素子に、その
保磁力以上の振幅の交流磁界を与える。
In the fifth invention, the magnetizer applies an alternating magnetic field to the magneto-optic effect element with an amplitude greater than its coercive force.

磁化電流測定回路は、漏洩磁界によって振幅変調された
交流磁界が保磁力を超えた時点の磁化器が出力する磁化
電流を測定する。測定した磁化電流は被探傷材の欠陥に
応して変わる。
The magnetizing current measuring circuit measures the magnetizing current output by the magnetizer at the time when the alternating magnetic field whose amplitude is modulated by the leakage magnetic field exceeds the coercive force. The measured magnetizing current changes depending on the defects in the material being tested.

〔実施例〕〔Example〕

以下本発明をその実施例を示す図面によって詳述する。 The present invention will be described in detail below with reference to drawings showing embodiments thereof.

第1図は第1発明に係る探傷方法による探傷状態を示す
模式図である。例えば鋼材であり、欠陥M2を有する被
探傷材Mの表面に接近して検出ヘッド1を配置している
。検出ヘッド1は被探傷材M側に、磁気光学効果素子1
aを有する。この磁気光学効果素子1aには、強磁性体
のYIG(Y3PesO+z)等のファラデー効果を奏
するものを用いる。磁気光学効果素子1aには、それに
交流バイアス磁界を与える交流バイアス励磁用コイル1
bを磁気光学効果素子1aに巻回する。磁気光学効果素
子1aの被探傷材M側には反射膜1cを設けている。ま
た、被探傷材Mに接近して、励磁コイル3を備え側面形
状がコ字状をしている被探傷材磁化器2を被探傷材M上
の欠陥M3の延伸方向に直角方向の磁界を与えるべく配
設しており、また被探傷材磁化器2は検出ヘッド1を径
方向に跨いで配置されている。
FIG. 1 is a schematic diagram showing a flaw detection state by the flaw detection method according to the first invention. For example, the detection head 1 is arranged close to the surface of a material M to be detected, which is made of steel and has a defect M2. The detection head 1 has a magneto-optic effect element 1 on the side of the material M to be tested.
It has a. The magneto-optic effect element 1a is made of a ferromagnetic material such as YIG (Y3PesO+z) that exhibits the Faraday effect. The magneto-optic effect element 1a includes an AC bias excitation coil 1 that applies an AC bias magnetic field to the magneto-optic effect element 1a.
b is wound around the magneto-optic effect element 1a. A reflective film 1c is provided on the side of the material M to be tested of the magneto-optic effect element 1a. In addition, approaching the material M to be tested, a material magnetizer 2 equipped with an excitation coil 3 and having a U-shaped side surface is applied with a magnetic field perpendicular to the extending direction of the defect M3 on the material M to be tested. The material magnetizer 2 is arranged to straddle the detection head 1 in the radial direction.

前記検出ヘッド1の磁気光学効果素子1aには図示しな
い光源から直線偏光の光PLが投射されており、磁気光
学効果素子1aを通り反射膜ICで反射して、再び磁気
光学効果素子1aを通った光は検光子4を介して光検知
器5へ入射するようになっている。
Linearly polarized light PL is projected from a light source (not shown) onto the magneto-optic effect element 1a of the detection head 1, passes through the magneto-optic effect element 1a, is reflected by the reflective film IC, and passes through the magneto-optic effect element 1a again. The light enters a photodetector 5 via an analyzer 4.

このような磁気光学効果素子1aは、それを通過する直
線偏光の光が磁気光学効果素子1aに与えられている磁
界の強度に関連して直線偏光の偏光面が回転する。
In such a magneto-optic effect element 1a, the plane of polarization of linearly polarized light passing through the magneto-optic effect element 1a rotates in relation to the intensity of the magnetic field applied to the magneto-optic effect element 1a.

その偏光面回転角θ、は下記(1)式で与えられる。The polarization plane rotation angle θ is given by the following equation (1).

θ、=VH#   ・・・(1) 但し、■:ヘルデ定数(比例定数) H:磁界強度 β;透過距離 また、磁気光学効果素子1aは第2図に示す如き角形(
ヒステリシス)磁気特性を有している。
θ,=VH#...(1) However, ■: Herde's constant (proportionality constant) H: Magnetic field strength β; Transmission distance Also, the magneto-optic effect element 1a has a rectangular shape (
hysteresis) has magnetic properties.

さて、このような探傷状態によって被探傷材の欠陥を検
出する方法を第2図とともに説明する。
Now, a method for detecting defects in a material to be tested using such testing conditions will be explained with reference to FIG. 2.

第2図は磁気光学効果素子が有する角形磁気特性と、交
流バイアス磁界H9と偏光面回転角θ、との関係を示す
説明図である。図示しない光源から直線偏光の光PLを
磁気光学効果素子1aへ投射すると、その光は反射膜I
Cで反射して検光子4を通って光検知器5へ入射するこ
とになる。一方、交流バイアス励磁用コイル1bに通電
して、第2図に示すように磁気光学効果素子1aが有す
る保磁力 He以上の振幅の交流バイアス磁界H9を与
える。また励磁コイル3に交流バイアス励磁用コイル1
bに通電した電流と同位相の電流を通電して被探傷材M
に所定の交流磁界を与える。
FIG. 2 is an explanatory diagram showing the relationship between the rectangular magnetic characteristics of the magneto-optic effect element, the alternating current bias magnetic field H9, and the polarization plane rotation angle θ. When linearly polarized light PL is projected from a light source (not shown) onto the magneto-optic effect element 1a, the light is transmitted to the reflection film I
The light is reflected by C, passes through the analyzer 4, and enters the photodetector 5. On the other hand, the AC bias excitation coil 1b is energized to provide an AC bias magnetic field H9 having an amplitude greater than the coercive force He of the magneto-optic effect element 1a, as shown in FIG. Also, the excitation coil 3 has an AC bias excitation coil 1.
A current of the same phase as the current applied to b is applied to the material M to be tested.
A predetermined alternating current magnetic field is applied to the

そうすると、被探傷材Mに欠陥M8が存在する位置には
欠陥Mつに関連して漏洩磁束が発生することになる。
Then, leakage magnetic flux will be generated in relation to the M defects at the position where the defect M8 is present in the material M to be tested.

ところで、検出ヘッド1に欠陥M8による漏洩磁束が作
用していない場合には、破線で示した交流バイアス磁界
Hpに関連して磁気光学効果素子1aの偏光面回転角θ
、の極性が変化する。即ち交流バイアス磁界H,が保磁
力+Hcを超え一■]cに達するまでは偏光面回転角子
〇。を保持することになる。この偏光面回転角θ、の変
化は、横軸を時間tとして第2図山)に示しているよう
に、交流バイアス磁界Hpの位相t0及びt2で偏光面
回転角θ、の極性が変化し、その極性変化に相応する矩
形波W1の周期、即ち時間幅はT1になる。
By the way, when the leakage magnetic flux due to the defect M8 is not acting on the detection head 1, the polarization plane rotation angle θ of the magneto-optic effect element 1a is changed in relation to the AC bias magnetic field Hp shown by the broken line.
The polarity of , changes. That is, until the AC bias magnetic field H exceeds the coercive force +Hc and reaches 1)c, the rotation angle of the plane of polarization is 〇. will be retained. This change in the polarization plane rotation angle θ is caused by the polarity of the polarization plane rotation angle θ changing with the phases t0 and t2 of the alternating current bias magnetic field Hp, as shown in Figure 2, with time t on the horizontal axis. , the period, or time width, of the rectangular wave W1 corresponding to the polarity change is T1.

一方、検出ヘッド1に、欠陥による漏洩磁束が作用した
場合には、第2図(a)に破線で示した交流バイアス磁
界Hpに漏洩磁束による磁界が加わって振幅変調され、
実線で示す如き振幅変調された交流磁界HLIJ<磁気
光学効果素子1aに与えられることになる。それにより
偏光面回転角θ、の変化は第2図(blに実線で示して
いるように交流バイアス磁界H1の位相t0及びt2で
偏光面回転角θ。
On the other hand, when leakage magnetic flux due to a defect acts on the detection head 1, the magnetic field due to the leakage magnetic flux is added to the AC bias magnetic field Hp shown by the broken line in FIG. 2(a), and the amplitude is modulated.
An amplitude-modulated alternating current magnetic field HLIJ as shown by the solid line is applied to the magneto-optic effect element 1a. As a result, the rotation angle θ of the polarization plane changes as shown by the solid line in FIG.

の極性が変化し、その極性変化に相応する矩形波W2の
周期、即ち時間幅はT2になる。したがって、漏洩磁束
が生じた場合には偏光面回転角の極性変化に相応する矩
形波がWlであったものが、矩形波W2に変化してその
位相が進むとともに、その時間幅がT1であったものが
、それより短い時間幅T2になる。ところで欠陥M8に
より発生する漏洩磁束は前述の如く欠陥に比例したもの
となるから、偏光面回転角θ、の極性変化に相応する矩
形波W、、W2の位相又はその時間幅を検出すれば、欠
陥M、を定量的に求め得ることになる。
The polarity of the rectangular wave W2 changes, and the period, ie, the time width, of the rectangular wave W2 corresponding to the polarity change becomes T2. Therefore, when leakage magnetic flux occurs, the rectangular wave Wl corresponding to the polarity change of the polarization plane rotation angle changes to a rectangular wave W2, its phase advances, and its time width is T1. However, the time width T2 is shorter than that. By the way, since the leakage magnetic flux generated by the defect M8 is proportional to the defect as described above, if the phase or time width of the rectangular waves W, W2 corresponding to the polarity change of the polarization plane rotation angle θ is detected, This means that the defect M can be quantitatively determined.

また、振幅変調された交流磁界HLが生じた場合はその
大きさに関係なく偏光面回転角θ、が変化するから、被
探傷材Mの欠陥M3を常に高感度に検出できることにな
る。それ故、探傷の精度及び信頼性を大幅に向上させる
ことができる。
Further, when an amplitude-modulated alternating current magnetic field HL is generated, the rotation angle θ of the plane of polarization changes regardless of its magnitude, so that the defect M3 in the material M to be detected can always be detected with high sensitivity. Therefore, the accuracy and reliability of flaw detection can be greatly improved.

第3図は第1発明に基づいて被探傷材の欠陥を検出すべ
く構成した第2発明に係る探傷装置のブロック図である
。検出ヘッド1は反射膜1cを設けた磁気光学効果素子
1a及び交流バイアス励磁用コイルibを備えている。
FIG. 3 is a block diagram of a flaw detection apparatus according to a second invention configured to detect defects in a material to be tested based on the first invention. The detection head 1 includes a magneto-optic effect element 1a provided with a reflective film 1c and an AC bias excitation coil ib.

磁気光学効果素子1aへ投射した直線偏光の光PLが反
射膜1cで反射して磁気光学効果素子1aを通った光は
検光子4を介して光検知器5へ入射する。光検知器5の
出力は波形成形器10へ与えられ、その出力は位相差測
定器11へ与えられる。磁化電源12により交流バイア
ス励磁用コイル1bが励磁される。その励磁電流に相応
する電流は移相器13へ与えられて、その出力は前記位
相差測定器11へ与えられる。
The linearly polarized light PL projected onto the magneto-optic effect element 1a is reflected by the reflective film 1c, and the light that passes through the magneto-optic effect element 1a enters the photodetector 5 via the analyzer 4. The output of the photodetector 5 is given to a waveform shaper 10, and the output thereof is given to a phase difference measuring device 11. The AC bias excitation coil 1b is excited by the magnetization power supply 12. A current corresponding to the excitation current is applied to the phase shifter 13, and its output is applied to the phase difference measuring device 11.

次にこの探傷装置の探傷動作を第2図とともに説明する
。被探傷材Mに被探傷材磁化器2 (第1図参照)によ
り交流磁界を与え、それと同相の交流バイアス磁界を磁
気光学効果素子1aに与える。
Next, the flaw detection operation of this flaw detection apparatus will be explained with reference to FIG. An alternating current magnetic field is applied to the material M to be tested by a material magnetizer 2 (see FIG. 1), and an alternating current bias magnetic field having the same phase as that is applied to the magneto-optic effect element 1a.

そして角形磁気特性を有する磁気光学効果素子1aに、
磁気光学効果素子1aが有する保磁力 Heより大きい
振幅の交流バイアス磁界Hpを与えると、磁気光学効果
素子1aの偏光面回転角θ、の極性は、交流バイアス磁
界Hpに同期して変化する。
Then, in the magneto-optic effect element 1a having square magnetic characteristics,
When an AC bias magnetic field Hp having an amplitude larger than the coercive force He of the magneto-optic effect element 1a is applied, the polarity of the polarization plane rotation angle θ of the magneto-optic effect element 1a changes in synchronization with the AC bias magnetic field Hp.

いま、被探傷材Mの欠陥M、による漏洩磁束が磁気光学
効果素子1aに作用していない場合は、偏光面回転角θ
、の極性変化に相応して第2図(b)に破線で示した矩
形波W1が得られる。この矩形波W1が偏光面回転角θ
F −0を示す直線と交差する時点はt。+  j2と
なる。
Now, if the leakage magnetic flux due to the defect M in the material M to be tested is not acting on the magneto-optic effect element 1a, the polarization plane rotation angle θ
, a rectangular wave W1 shown by a broken line in FIG. 2(b) is obtained corresponding to the polarity change of . This rectangular wave W1 has a polarization plane rotation angle θ
The time point at which it intersects the straight line indicating F-0 is t. + j2.

しかるに、欠陥による漏洩磁界が磁気光学効果素子1a
に作用している場合には、交流バイアス磁界Hpはその
漏洩磁界により振幅変調されて第2図ta+に実線で示
すような振幅変調された交流磁界HLとなり、その交流
磁界Htによって偏光面回転角θ、の極性変化に相応し
て第2図(blに実線で示した矩形波W2が得られる。
However, the leakage magnetic field due to the defect is caused by the magneto-optic effect element 1a.
When the alternating current bias magnetic field Hp is amplitude-modulated by the leakage magnetic field, it becomes an amplitude-modulated alternating current magnetic field HL as shown by the solid line in Fig. 2 ta+, and the polarization plane rotation angle is changed by the alternating current magnetic field Ht. Corresponding to the polarity change of θ, a rectangular wave W2 shown by a solid line in FIG. 2 (bl) is obtained.

この矩形波W2が偏光面回転角θV−0を示す直線と交
差する時点はり。J、j21となり、漏洩磁束が作用し
ていない場合の矩形波W1より進相することになる。そ
して矩形波W1の周期、即ち時間幅T1は、矩形波W2
の周期たる時間幅T2より長くなる。
The moment when this rectangular wave W2 intersects the straight line indicating the polarization plane rotation angle θV-0. J, j21, which is more advanced than the rectangular wave W1 when no leakage magnetic flux is acting. The period of the rectangular wave W1, that is, the time width T1 is equal to the period of the rectangular wave W2.
The period is longer than the time width T2.

このようにして得られた矩形波W、又はW2は、波形成
形器10で歪部分を補正すべく成形して位相差測定器1
1へ与える。
The rectangular wave W or W2 obtained in this way is shaped by a waveform shaper 10 to correct the distorted portion, and is then shaped into a phase difference measuring device 1.
Give to 1.

一方、交流バイアス励磁用コイル1bに与える励磁電流
と同様の電流を磁化電源12から移相器13へ与える。
On the other hand, a current similar to the excitation current applied to the AC bias excitation coil 1b is applied from the magnetization power supply 12 to the phase shifter 13.

それにより移相器13は、交流バイアス電流、つまり交
流バイアス磁界Hpの0位相から移相した位相t0で立
上り、位相t2で立下る前記矩形波W、と同様の矩形波
を発生して位相差測定器11へ与える。それにより、位
相差測定器11は、波形成形器10から与えられた矩形
波W、又はW2の位相t0又はt。′と、移相器13か
ら与えられた矩形波W1と同様の矩形波の位相t0との
位相差1o−1o又はt。−to’ (又は矩形波W、
と同様の矩形波の位相t2と矩形波w2の位相t2′と
の位相差t2−t2′)を位相差Tとして測定する。
Thereby, the phase shifter 13 generates a rectangular wave similar to the rectangular wave W that is shifted from the 0 phase of the AC bias current, that is, the AC bias magnetic field Hp, and rises at a phase t0 and falls at a phase t2. It is given to the measuring device 11. Thereby, the phase difference measuring device 11 detects the phase t0 or t of the rectangular wave W or W2 given from the waveform shaper 10. ' and the phase t0 of a rectangular wave similar to the rectangular wave W1 given from the phase shifter 13, 1o-1o or t. -to' (or square wave W,
The phase difference t2-t2') between the phase t2 of the rectangular wave similar to that and the phase t2' of the rectangular wave w2 is measured as the phase difference T.

ところで被探傷材Mの漏洩磁界は被探傷材Mの欠陥M8
の深さ及び幅に略比例するから、位相差測定器11が測
定した位相差Tにより欠陥Maを検出することになる。
By the way, the leakage magnetic field of the material M to be tested is the defect M8 of the material M to be tested.
The defect Ma is detected by the phase difference T measured by the phase difference measuring device 11.

このように磁気光学効果素子に漏洩磁界が作用した場合
は、その大きさに関係なく偏光面回転角θ、が変化する
から欠陥を高感度に検出でき、また位相差から欠陥を定
量的に検出できることになる。
In this way, when a leakage magnetic field acts on a magneto-optic effect element, the rotation angle θ of the plane of polarization changes regardless of its magnitude, so defects can be detected with high sensitivity, and defects can also be detected quantitatively from the phase difference. It will be possible.

なお、いま磁気光学効果素子1aの保磁力Hcより充分
大きい振幅の交流バイアス磁界H,,を磁気光学効果素
子1aに与え、漏洩磁束による振幅変調分をΔHとする
と、 c m〈〈1   ・・・(2) であるから、 ・・(3) となる。
Now, if an alternating current bias magnetic field H,, having an amplitude sufficiently larger than the coercive force Hc of the magneto-optic effect element 1a is applied to the magneto-optic effect element 1a, and the amplitude modulation due to the leakage magnetic flux is ΔH, then cm〈〈1...・(2) Therefore, ・(3) becomes.

ここでΔH<<H,であるから、 第4図は第1発明に基づいて被探傷材の欠陥を検出すべ
く構成した第3発明に係る探傷装置のブロック図である
Here, ΔH<<H, so FIG. 4 is a block diagram of a flaw detection apparatus according to a third invention configured to detect defects in a material to be tested based on the first invention.

波形成形器10及び移相器13の各出力を夫々時間幅差
測定器111に与えており、他の構成部分は第3図に示
した探傷装置の構成と同様となっている。
The outputs of the waveform shaper 10 and the phase shifter 13 are respectively applied to a time width difference measuring device 111, and the other components are similar to the structure of the flaw detection apparatus shown in FIG.

この時間幅差測定器111は、波形成形器10から与え
られた矩形波W、又はW2の周期たる時間幅T1又はT
2と、移相器13から与えられた矩形波Wと同様の矩形
波の周期たる時間幅T1との時間幅差を測定するように
なっている。
This time width difference measuring device 111 measures the time width T1 or T which is the period of the rectangular wave W or W2 given from the waveform shaper 10.
2 and the time width T1, which is the period of a rectangular wave similar to the rectangular wave W given from the phase shifter 13, is measured.

したがって、この探傷装置は移相器13から与えられた
交流バイアス磁界Hpに相応する矩形波Wと同様の矩形
波の時間幅T、と波形成形器10から与えられ漏洩磁界
により振幅変調される交流磁界に相応する矩形波W1又
はW2の時間幅TI又はTtとの時間幅差を測定する。
Therefore, this flaw detection device has a time width T of a rectangular wave similar to the rectangular wave W corresponding to the AC bias magnetic field Hp applied from the phase shifter 13, and an AC amplitude modulated by the leakage magnetic field applied from the waveform shaper 10. The time width difference between the time width TI or Tt of the rectangular wave W1 or W2 corresponding to the magnetic field is measured.

そして、この時間幅差から欠陥M8を検出することにな
る。
Then, the defect M8 is detected from this time width difference.

次に第4発明である探傷方法の原理を、第1図及び第5
図により説明する。第5図は交流バイアス磁界と、その
磁化電流との関係を示す説明図である。被探傷材Mに与
える交流磁界と同相の交流バイアス磁界を磁気光学効果
素子1aに与える。
Next, the principle of the flaw detection method, which is the fourth invention, is explained in Figures 1 and 5.
This will be explained using figures. FIG. 5 is an explanatory diagram showing the relationship between an alternating current bias magnetic field and its magnetizing current. An AC bias magnetic field having the same phase as the AC magnetic field applied to the material M to be tested is applied to the magneto-optic effect element 1a.

そして磁気光学効果素子1aにその保磁力 Hcより大
きい振幅の交流バイアス磁界H,を与えるべく、交流バ
イアス励磁用コイル1bに第5図(blに示す正弦波の
磁化電流■を流す。被探傷材Mの欠陥M8による漏洩磁
界が生じていない場合は第5図+alに破線で示す正弦
波状の交流バイアス磁界H。
Then, in order to apply an AC bias magnetic field H having a larger amplitude than its coercive force Hc to the magneto-optic effect element 1a, a sinusoidal magnetizing current (2) shown in FIG. 5 (bl) is applied to the AC bias excitation coil 1b. When no leakage magnetic field is generated due to the defect M8 in M, a sinusoidal AC bias magnetic field H is shown by the broken line in FIG. 5+al.

が得られる。そして磁気光学効果素子1aの保磁力+H
C(又は−Hc)に等しい交流バイアス磁界Hpを得る
磁化電流は■。(又はT2)になる。
is obtained. And the coercive force +H of the magneto-optic effect element 1a
The magnetizing current to obtain an AC bias magnetic field Hp equal to C (or -Hc) is ■. (or T2).

一方、欠陥M3による漏洩磁界が生じている場合には、
交流バイアス磁界Hpが漏洩磁界により振幅変調されそ
の交流磁界Htは第2図(alに実線で示すように正弦
波状に変化する。そして振幅変調された交流磁界HLが
保磁力+Hc(又は−1−1c)を超えた時点の磁化電
流I、即ち瞬時値はI0′(又はIdになる。
On the other hand, if a leakage magnetic field is generated due to defect M3,
The AC bias magnetic field Hp is amplitude modulated by the leakage magnetic field, and the AC magnetic field Ht changes in a sinusoidal manner as shown by the solid line in FIG. 1c), the magnetizing current I, ie, the instantaneous value, becomes I0' (or Id).

それ故、漏洩磁界が生じている場合は、保磁力+HC(
又は−Hc)を超えた時点の漏洩磁界により振幅変調さ
れた交流磁界Hpは、交流バイアス磁界の瞬時値H6と
漏洩磁界分ΔH(又はΔH’)との和となり、その時点
の磁化電流Iは■。′(又は12′)となる。
Therefore, when a leakage magnetic field occurs, coercive force + HC (
The AC magnetic field Hp whose amplitude is modulated by the leakage magnetic field at the time when it exceeds the leakage magnetic field (or -Hc) is the sum of the instantaneous value H6 of the AC bias magnetic field and the leakage magnetic field component ΔH (or ΔH'), and the magnetizing current I at that point is ■. ' (or 12').

したがって、交流磁界HLが保磁力 Hc を超えた時
点の磁化電流I、つまり瞬時値を測定すれば、被探傷材
Mの欠陥M、を検出できることになる。また磁化電流■
に基づいて欠陥M3を定量的に求め得る。
Therefore, by measuring the magnetizing current I, that is, the instantaneous value at the time when the alternating magnetic field HL exceeds the coercive force Hc, the defect M in the material M to be tested can be detected. Also magnetizing current■
Defect M3 can be quantitatively determined based on .

第6図は第4発明に基づいて被探傷材の欠陥を検出すべ
く構成した第5発明に係る探傷装置のブロック図である
FIG. 6 is a block diagram of a flaw detection apparatus according to a fifth invention configured to detect defects in a material to be tested based on the fourth invention.

検出へソド1、光検知器5、波形成形器10及び磁化電
源12は第3図に示した探傷装置と同様に構成されてお
り、波形成形器10の出力は微分回路14へ与えられる
。この微分回路14の出力及び磁化電源12の出力は磁
化電流測定器15へ与えられる。磁化電流測定器15の
出力は演算器16へ与えられる。
The detection head 1, the photodetector 5, the waveform shaper 10, and the magnetization power source 12 are constructed in the same manner as the flaw detection apparatus shown in FIG. The output of the differentiating circuit 14 and the output of the magnetizing power supply 12 are given to a magnetizing current measuring device 15. The output of the magnetizing current measuring device 15 is given to a computing unit 16.

次にこの探傷装置の探傷動作を第5図とともに説明する
Next, the flaw detection operation of this flaw detection apparatus will be explained with reference to FIG.

被探傷材Mに被探傷材磁化器2(第1図参照)により磁
界を与える。また角形磁気特性を有する磁気光学効果素
子1に、それが有する保磁力Hcより大きい振幅の交流
バイアス磁界H9を与える。
A magnetic field is applied to the material M to be tested by a material magnetizer 2 (see FIG. 1). Further, an AC bias magnetic field H9 having an amplitude larger than the coercive force Hc of the magneto-optic effect element 1 having square magnetic characteristics is applied.

いま、被探傷材Mの欠陥による漏洩磁界が発生していな
い場合には、交流バイアス磁界Hpが保磁力+Hc (
又は−HC)を超えた時点の磁化電流I、つまり瞬時値
は第5図(blに示すように1゜(又はI2)として求
められる。この磁化電流I。(又はI2)を演算器16
に予め記憶させておく。
Now, if no leakage magnetic field is generated due to defects in the material M to be tested, the AC bias magnetic field Hp becomes coercive force + Hc (
The magnetizing current I, that is, the instantaneous value at the time when the magnetizing current I (or -HC) exceeds 1° (or I2) is determined as 1° (or I2) as shown in FIG.
be memorized in advance.

さて、偏光面回転角の極性変化に相応して光検知器5か
ら得た矩形波を波形成形器10により歪部を除去すべく
成形する。その矩形波を微分回路14に与えて微分する
。微分回路14は矩形波が立上るときに正のトリガパル
スを、立下るときに負のトリガパルスを出力する。この
正、負のトリガパルスを、交流バイアス磁界H0が保磁
力 Hc を超えたときのタイミング信号として磁化電
流測定器15へ与える。そうすると磁化電流測定器15
は与えられたトリガパルスのタイミングで交流バイアス
励磁用コイル1bの励磁電流に相応し磁化電源から与え
られる電流を測定して、その測定値を演算器16へ与え
る。演算器16は予め記憶している保磁力Hcに相応す
る磁化電流■。、lxと、測定した磁化電流Iとの差を
求める。そして求めた電流差により欠陥Maを検出する
Now, the rectangular wave obtained from the photodetector 5 is shaped by the waveform shaper 10 in accordance with the polarity change of the rotation angle of the polarization plane in order to remove the distorted portion. The rectangular wave is given to a differentiating circuit 14 for differentiation. The differentiating circuit 14 outputs a positive trigger pulse when the rectangular wave rises, and outputs a negative trigger pulse when the rectangular wave falls. These positive and negative trigger pulses are given to the magnetizing current measuring device 15 as timing signals when the AC bias magnetic field H0 exceeds the coercive force Hc. Then, the magnetizing current measuring device 15
measures the current applied from the magnetization power source corresponding to the excitation current of the AC bias excitation coil 1b at the timing of the applied trigger pulse, and provides the measured value to the computing unit 16. The arithmetic unit 16 generates a magnetizing current (■) corresponding to the coercive force Hc stored in advance. , lx and the measured magnetizing current I. Then, the defect Ma is detected based on the obtained current difference.

ナオ、欠陥M、による漏洩磁界が生じており、それによ
り振幅変調された交流磁界HLが保磁力+Hcを超えた
時点の磁化電流■は第5図(blに示すようにI。Z 
 ■2rとなる。
A leakage magnetic field is generated due to the defect M, and the magnetizing current ■ at the time when the amplitude-modulated AC magnetic field HL exceeds the coercive force +Hc is as shown in Fig. 5 (bl).
■It will be 2r.

そして、漏洩磁界が生じていない場合の交流バイアス磁
界をH4,漏洩磁界が生じている場合の交流バイアス磁
界をH4′とすると、コイル形状が円形の場合、 ! 但し、n:コイルの巻数 Il:磁路長 となるから、 漏洩磁界分ΔH2ΔH′は、第5図fblに示すように
、 となる。それ故、磁気光学効果素子1aの保磁力Hcを
予め演算器16に記憶させておいて、前記(8)(9)
式の演算を演算器16で行えば漏洩磁界分ΔI−1ΔH
′が求まり、その漏洩磁界分ΔH,ΔH’により欠陥を
検出できることにもなる。
If the AC bias magnetic field when no leakage magnetic field is generated is H4, and the AC bias magnetic field when a leakage magnetic field is generated is H4', then when the coil shape is circular, ! However, since n: the number of turns of the coil Il: the length of the magnetic path, the leakage magnetic field ΔH2ΔH' is as shown in FIG. 5 fbl. Therefore, the coercive force Hc of the magneto-optic effect element 1a is stored in advance in the arithmetic unit 16, and the above-mentioned (8) and (9)
If the formula is calculated by the calculator 16, the leakage magnetic field ΔI-1ΔH
' can be determined, and defects can be detected from the leakage magnetic field components ΔH and ΔH'.

このように欠陥による漏洩磁界が生じた場合には、振幅
変調された交流磁界が保磁力を超える時点の磁化電流た
る磁化電流の瞬時値が、保磁力に相応する磁化電流以下
になるから、その磁化電流に基づいて欠陥を高精度に検
出し、また磁化電流に応じて定量的に検出することにな
る。
When a leakage magnetic field occurs due to a defect in this way, the instantaneous value of the magnetizing current, which is the magnetizing current at the point when the amplitude-modulated alternating magnetic field exceeds the coercive force, becomes less than the magnetizing current corresponding to the coercive force. Defects are detected with high precision based on the magnetizing current, and also quantitatively detected according to the magnetizing current.

なお、本実施例では被探傷材Mに交流磁界を与えたが直
流磁界を与えても同様の欠陥を検出できる。
In this embodiment, an alternating current magnetic field is applied to the material M to be tested, but similar defects can be detected even if a direct current magnetic field is applied.

〔発明の効果〕〔Effect of the invention〕

以上詳述したように第1発明は、磁気光学効果素子の保
磁力より大きい振幅の交流バイアス磁界を磁気光学効果
素子に与えて交流バイアス磁界に関連する矩形波の位相
又は時間幅に基づいて、第2発明は交流バイアス磁界に
関連する矩形波と、偏光面回転角に相応する矩形波との
位相差に基づいて、第3発明は交流バイアス磁界に関連
する矩形波の時間幅と、偏光面回転角に相応する矩形波
の時間幅との時間幅差に基づいて、第4発明は交流バイ
アス磁界が磁気光学効果素子の保磁力を超えた時点の磁
化電流に基づいて、第5発明は交流バイアス磁界が磁気
光学効果素子の保磁力を超えた時点の磁化電流と、保磁
力に相応する交流磁界を得るための磁化電流との差に基
づいて、被探傷材の欠陥を高精度に、また定量的に検出
できる。
As detailed above, the first invention applies an AC bias magnetic field with an amplitude larger than the coercive force of the magneto-optic effect element to the magneto-optic effect element, and based on the phase or time width of the rectangular wave related to the AC bias magnetic field, The second invention is based on the phase difference between the rectangular wave related to the AC bias magnetic field and the rectangular wave corresponding to the rotation angle of the polarization plane. The fourth invention is based on the time width difference with the time width of the rectangular wave corresponding to the rotation angle, the fourth invention is based on the magnetizing current at the time when the AC bias magnetic field exceeds the coercive force of the magneto-optic effect element, and the fifth invention is Based on the difference between the magnetizing current when the bias magnetic field exceeds the coercive force of the magneto-optic effect element and the magnetizing current used to obtain an alternating magnetic field corresponding to the coercive force, defects in the material being tested can be detected with high precision. Can be detected quantitatively.

したがって、各発明はいずれも鋼材等の被探傷材の品質
検査の精度及び信頼性を大幅に向上させることができる
優れた効果を奏する。
Therefore, each of the inventions has an excellent effect of significantly improving the accuracy and reliability of quality inspection of materials to be tested such as steel materials.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は第1発明に係る探傷方法による探傷状態の模式
図、第2図は磁気光学効果素子の角形磁気特性、交流バ
イアス磁界及び偏光面回転角の関係を示す説明図、第3
図は第2発明に係る深傷装置のブロック図、第4図は第
3発明に係る探傷装置のブロック図、第5図は第4発明
に係る探傷方法を説明するための交流バイアス磁界及び
磁化電流の関係を示す説明図、第6図は第5発明に係る
探傷装置のブロック図、第7図は従来の探傷装置による
探傷状態の模式図、第8図はその磁気光学効果素子の角
形磁気特性を示す特性図である。
FIG. 1 is a schematic diagram of the flaw detection state by the flaw detection method according to the first invention, FIG. 2 is an explanatory diagram showing the relationship between the rectangular magnetic characteristics of the magneto-optic effect element, the AC bias magnetic field, and the rotation angle of the plane of polarization.
Figure 4 is a block diagram of a deep flaw detection apparatus according to the second invention, Figure 4 is a block diagram of a flaw detection apparatus according to the third invention, and Figure 5 is an AC bias magnetic field and magnetization for explaining the flaw detection method according to the fourth invention. An explanatory diagram showing the relationship between currents, FIG. 6 is a block diagram of the flaw detection device according to the fifth invention, FIG. 7 is a schematic diagram of the flaw detection state by the conventional flaw detection device, and FIG. 8 is a square magnetic field diagram of the magneto-optic effect element. FIG. 3 is a characteristic diagram showing characteristics.

Claims (1)

【特許請求の範囲】 1、磁気光学効果素子を用いて被探傷材の欠陥を検出す
る探傷方法において、 前記磁気光学効果素子に、それが有する保 磁力より大きい振幅を有する交流磁界を与えて、その偏
光面回転角の極性変化に相応する矩形波の位相又は時間
幅から欠陥を検出することを特徴とする探傷方法。 2、磁気光学効果素子を用いて被探傷材の欠陥を検出す
る探傷装置において、 前記磁気光学効果素子に、それが有する保 磁力より大きい振幅の交流磁界を与える磁化器及び前記
交流磁界に同期する矩形波と前記磁気光学効果素子の偏
光器回転角の極性変化に相応する矩形波との位相差を測
定する位相差測定回路を備えることを特徴とする探傷装
置。 3、磁気光学効果素子を用いて被探傷材の欠陥を検出す
る探傷装置において、 前記磁気光学効果素子に、それが有する保 磁力より大きい振幅の交流磁界を与える磁化器及び前記
交流磁界に同期する矩形波の時間幅と前記磁気光学効果
素子の偏光器回転角の極性変化に相応する矩形波の時間
幅との差を測定する時間幅差測定回路を備えることを特
徴とする探傷装置。 4、磁気光学効果素子を用いて被探傷材の欠陥を検出す
る探傷方法において、 前記磁気光学効果素子に、それが有する保 磁力より大きい振幅を有する交流磁界を与えて、前記交
流磁界が前記保磁力を超える時点の磁化電流を求めて、
該磁化電流から欠陥を検出することを特徴とする探傷方
法。 5、磁気光学効果素子を用いて被探傷材の欠陥を検出す
る探傷装置において、 前記磁気光学効果素子に、それが有する保 磁力より大きい振幅の交流磁界を与える磁化器と、交流
磁界が磁気光学効果素子の保磁力を超えた時点の前記磁
化器が出力する磁化電流を測定する磁化電流測定回路と
を備えることを特徴とする探傷装置。
[Claims] 1. A flaw detection method for detecting defects in a material to be tested using a magneto-optic effect element, comprising: applying an alternating magnetic field having an amplitude larger than a coercive force of the magneto-optic effect element; A flaw detection method characterized by detecting defects from the phase or time width of a rectangular wave corresponding to the polarity change of the rotation angle of the polarization plane. 2. In a flaw detection apparatus that detects defects in a material to be tested using a magneto-optic effect element, a magnetizer that applies an alternating magnetic field to the magneto-optic effect element with an amplitude larger than its coercive force and is synchronized with the alternating magnetic field. A flaw detection apparatus comprising a phase difference measuring circuit that measures a phase difference between a rectangular wave and a rectangular wave corresponding to a polarity change of a polarizer rotation angle of the magneto-optic effect element. 3. In a flaw detection apparatus that detects defects in a material to be tested using a magneto-optic effect element, the magnetizer provides an alternating magnetic field with an amplitude larger than the coercive force of the magneto-optic effect element, and is synchronized with the alternating magnetic field. A flaw detection apparatus comprising a time width difference measuring circuit that measures a difference between a time width of a rectangular wave and a time width of a rectangular wave corresponding to a polarity change of a polarizer rotation angle of the magneto-optic effect element. 4. In a flaw detection method for detecting defects in a material to be tested using a magneto-optic effect element, an alternating current magnetic field having an amplitude larger than a coercive force of the magneto-optic effect element is applied to the magneto-optic effect element, and the alternating current magnetic field Find the magnetizing current at the point when it exceeds the magnetic force,
A flaw detection method characterized by detecting defects from the magnetizing current. 5. In a flaw detection device that detects defects in a material to be tested using a magneto-optic effect element, a magnetizer that applies an alternating magnetic field with an amplitude larger than the coercive force of the magneto-optic effect element to the magneto-optic effect element; A flaw detection apparatus comprising: a magnetizing current measuring circuit that measures a magnetizing current output by the magnetizer at a time when the magnetizing current exceeds the coercive force of an effect element.
JP7579289A 1989-03-27 1989-03-27 Flaw detection method and flaw detection device Expired - Lifetime JPH0820421B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7579289A JPH0820421B2 (en) 1989-03-27 1989-03-27 Flaw detection method and flaw detection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7579289A JPH0820421B2 (en) 1989-03-27 1989-03-27 Flaw detection method and flaw detection device

Publications (2)

Publication Number Publication Date
JPH02253152A true JPH02253152A (en) 1990-10-11
JPH0820421B2 JPH0820421B2 (en) 1996-03-04

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