JPH02254331A - Temperature measuring device - Google Patents

Abstract

PURPOSE:To make it possible to measure the temperature distribution at many points of a wafer by arranging temperature measuring elements at a plurality of places on the upper surface of a substrate whose shape is approximately equal to the shape of the wafer, and taking out measured signals from a plurality of set electrodes. CONSTITUTION:A substrate 11 has the approximately equal shape as the shape of a wafer and comprises a single-crystal silicon material. Temperature measuring elements 12 are distributed and arranged on a plurality of required places on the main surface of the substrate 11. A plurality of electrodes 13 take the signals out of the temperature measuring elements 12. A contact probe 14 forms a contact connecting means, and a plurality of contact needles 14a are made to protrude to the outside. The needles are in contact with the electrodes so as to guide out the signal. A temperature measuring substrate 10 is mounted on a wafer stage, and the temperatures are measured. Therefore, the distribution of the temperatures at a plurality of points on the main surface of the temperature measuring substrate 10 is accurately measured. The temperature distribution of the wafer on the wafer stage in surface treatment can be measured.

Description

[Detailed Description of the Invention] [Industrial Field of Application] The present invention provides a process for surface treatment of semiconductor wafers.
The side fj is placed on the wafer stage and the temperature distribution is measured so that the humidity to the child conductor wafer during processing can be estimated.
Regarding A device.

[Conventional technology]

FIG. 11 shows a wafer temperature measurement device [
11 is a cross-sectional view showing FIG. In the figure, reference numeral 1 denotes a wafer to be processed in a processing tank, which is placed on a wafer stage 2, and is fixed by being depressurized by evacuation through a decompression port 2a. 3 is a thermocouple for measuring the temperature of the wafer l.

4 is a radiation thermometer showing another example of the 6411 temperature device, which indirectly measures the humidity of the wafer 1 from above.

In this way, when the temperature of the wafer 1 becomes excessive, the surface treatment proceeds while forming a reaction /15 above the surface.

For this surface treatment, in atmospheric pressure chemical vapor deposition (CVD), the reaction is a thermochemical reaction, so silicon dioxide (Si
02) When forming a film, heat the wafer 1 to about 400'C.
In addition, in plasma processing, the reaction temperature is about 200 to about 30℃.
The temperature is about 0°C, and wafer 1 is also heated due to the reaction.

The temperature at which the surface treatment of the wafer 1 is completed is closely related to the surface treatment, and the temperature of the wafer 1 has been conventionally measured.

As shown in FIG. 11, conventional temperature measurement devices for the wafer 1 during surface treatment include a thermocouple 3 that measures the temperature of the back surface in tmm, and a radiation temperature measurement device that indirectly measures the temperature of the main surface of the wafer 1. A total of 4 were used.

[Problem to be solved by the invention]

In the conventional temperature measuring device as described above, in the case of heat ratio 1:3 in which the temperature on the back side of wafer 1 is measured directly on one page, there are the following problems.

(a) Thermocouple 3 has no elasticity at the tip and is attached to wafer 1.
Errors occur frequently due to poor contact.

(b) Due to the structure of the wafer stage 2, it is not possible to arrange a large number of thermocouples 3 at required distribution positions.0 (c) What is desired to measure is the main surface, but only the back surface can be measured.

Also, the radiation temperature i! which indirectly measures the temperature of the main surface of the wafer 1! +4 had the following problems.

(a) ') The wavelength intensity of the emitted infrared rays changes depending on the surface condition of Neem 1, so the measured area is low.

(b) Because the measurement range is wide, it is not possible to narrow down the measurement range to the required measurement range on wave 1.

(C) The measured values change due to the influence of the reaction layer 5 interposed between the wafer 1 and the wafer 1.

This invention was made to solve these problems, and it is possible to accurately estimate the temperature distribution at multiple points on the main surface of a wafer on one wafer/stage, and to set the wafer at an appropriate processing temperature. 1. Obtaining a temperature measuring device for
It has been the target.

[Means to solve the problem]

The IML device according to the present invention has temperature measuring elements disposed at a plurality of required locations on the upper surface of a substrate having approximately the same shape as wave/~. Therefore, the electrodes were connected to each temperature measuring element with wiring, and the surface was covered with 4 protective films, leaving the exposed surface of the electrode.
The temperature measurement board is converted into a wave stage so that the measurement signal is output from the T pole to the outside.

[Effect]

In this invention, the substrate has almost the same shape as the wafer, and 111 probes with a number of a are arranged on the main surface, so that the humidity distribution on the main surface can be accurately measured. This results in
It is estimated that the wafers on the other wafer stages are at approximately the same temperature based on the measurement signal from the flL measuring device, and the wafers are subjected to surface treatment in an appropriate temperature environment.

[Major example]

FIG. 1 is a perspective view of a temperature measuring device according to an embodiment of the present invention. In the figure, 10 is a temperature measuring board, which is constructed as follows. Reference numeral 11 denotes a substrate having almost the same shape as the wafer l (see Fig. x1), and is made of a single crystal silicon material, aluminum material, or the like. Reference numeral 12 designates temperature measuring elements distributed at a plurality of required locations on the main surface of the substrate 11, and reference numeral 13 designates a plurality of electrodes for extracting signals from the temperature measuring elements 12.

Reference numeral 14 denotes a contact plug a--contacting means, from which a plurality of contact needles 14a come out and come into contact with each electrode 13 to lead double JI+ to the outside.

Note that the electrode 13 may be provided from the main surface to the side surface.

The temperature measuring element 12 and the electric shock section 13 on the main surface of the substrate 11 are
As shown in the figure. On the substrate 11, if the substrate 11 is an insulator, an insulating film is applied directly, or if it is a conductor, an insulating film is applied, the temperature measuring element 12 and I4 are fixed to the pole 13, and the wiring 15 is formed in advance by film formation. It is. 16 is a bonding pad of each temperature measuring element 12 and each wiring 15, and each wiring 15 and each electrode 1.
Thin metal wire wire-bonded to 3 and 1, respectively.
Fu is 1! There are four protective films covering only the top of the electrode 13 and covering the top of the substrate 11.

The temperature measuring element 12 is structured as shown in FIG. 4 and is formed into a chip. Two types of first conductor 19 and second conductor 20 forming a thermocouple for temperature compensation are deposited by sputtering on a substrate 18 made of a silicon-based plate or an aluminum plate coated with an insulating film. It is formed by In addition,
When the substrate 18 is a conductor, an insulating film is formed on the upper surface in advance. 21 is a bonding pad.

#1! Table 1 shows examples of combinations of metals for the electric body 19 and the second conductor 20, which are generally used as materials for thermocouples.

Table 1 FIG. 3(a) shows a temperature measuring board 10 according to a second embodiment of the present invention, which is different in formation from the temperature measuring element 12 and %1fM13 in FIG. A temperature measuring element 22, electrodes 23, and wiring 24 are formed on the substrate 11 by film formation (fish debris, vapor phase growth, etc.).

Details of part A where the temperature measuring element 22 is formed and part B where the wL pole 23 is formed are shown in FIGS. 3(b) and 3(c).

An insulating film 26 is formed on the substrate 11 by film formation, and a temperature measuring element 22 and an l pole 23 are formed thereon by film formation. An insulating M2 film is formed on the temperature measuring element 22 to cover it, and the contact pad 25 portion is opened. Each temperature measuring element 2
2 contact pads 25 and corresponding electrodes 23,
They are connected by wiring 24 formed by film formation. The substrate 11 in this state is covered with 4 protective films 1 and 1, leaving only the upper surface of the electrode 23.

The temperature measuring element 22 is constructed as shown in FIG. Insulation on board ll! The first metropolitan electric body 19 and the second electric conductor 20 are formed on the contact pad 25 by film formation.
has been established.

As shown in FIG. 6, the temperature measurement board 10 configured as described above is placed on the wafer stage 29 and opened at the decompression port 29a.
Vacuum it, reduce the pressure, and fix it.

Each contact needle 14a of the contact globe 14 is layered onto each electrode 13. In this way, the surface temperature of the wafer 1 is estimated by placing it in the same environment as the wafer 1 fixed on another wafer stage 2 and processing the signal from the temperature measuring device, thereby estimating the surface temperature of the wafer 1. Apply surface treatment.

For example, in a film forming process such as chemical vapor deposition such as atmospheric pressure CVD or sputtering, the temperature measuring substrate 10 is placed on a wafer.
In addition, in etching processing, which is a type of plasma processing, 3, the film to be etched is used in a state where it has been formed in advance, and the surface is similar to that of the wafer 1 to be actually processed. The process is also performed on the other temperature measuring board 10 at the same time.

During surface treatment, the signal from the temperature measurement device captures the surface temperature that changes as the surface treatment progresses, and the signals from many distributed points on the main surface capture the surface temperature that changes as the surface treatment progresses. In-plane variations are accurately captured as temperature distribution.

The temperature measuring element 12.22 captures the temperature on the main surface through the protective film 17 and converts it into a signal.The thinner and more thermally conductive the protective film 17 is, the higher the accuracy is. .

FIG. 7 is a perspective view from below showing a temperature measuring device according to a third embodiment of the present invention. Reference numeral 30 denotes a temperature measurement board, which is configured as follows. : On the main surface of the Jh tentative 1x, fML test strips 12 are fixed at a plurality of required locations, and a plurality of electrodes 33 for extracting signals are provided on the back surface.

Reference numeral 34 denotes a contact glove serving as a contact connection means, from which a plurality of contact needles 34a extend, and contacts each electrode 33 from below to transmit a signal to the outside.

Measurement f on the above board ll! FIG. 8 shows the L element 12 and the electrode 33. A plurality of through holes 11a are provided in the substrate 11, and a film-forming wiring 15 is formed on the upper surface thereof, leading to the through holes 1a. Note that when the substrate 11 is a conductor, an insulating film is applied on both surfaces in advance. 33
are a plurality of electrodes formed by film deposition on the back surface of the temporary 21i 11 at the positions of the through holes 11a, and are connected to the wiring 15. The temperature measuring element 12 is fixed on the main surface of the substrate 1 in this state.
Okay, bonding pad 2 of each temperature sensing element 12 (fourth
(see figure) and each wiring 15 are wire-bonded using thin metal wires 16. The substrate 11 in this state is machined with one thin layer.

FIG. 9(a) shows a temperature measuring board 30 according to a large embodiment of the present invention shown in FIG. 4, which is different in formation from the temperature measuring element 12 shown in FIG. The temperature measuring element 22 is formed on the substrate 11 by film formation, and the arrangement #! Connected to electric &33 by 24, thin protection ll117
It is covered by

The details of part 0 where the temperature measuring element 22 is formed are shown in FIG. 9(b).
Shown below. Forming an insulating film 26 on the substrate 11 by film formation,
A temperature measuring element 22 is formed thereon by film formation, and an insulating film 17 is formed and removed over the temperature measuring element 22, leaving the contact pad 25 portion open.

The contact pads 25 of each temperature measuring element 22 and the corresponding through holes lla are connected to each other by wirings 24 formed by full film formation.

The temperature measurement board 30 configured as described above is remounted on the wafer stage 39 as shown in FIG.
9a, apply a vacuum, reduce the pressure, and fix. The contact globe 34 is inserted into the upper part of the wafer stage 39, and the electric wires are pulled out and the valley side probes 34a touch each electrode 33 to which it corresponds.
The signal from each 611JIjA element 12 is taken out.

Note that the temperature measurement boards 10 and 30 provided with the IJ temperature elements 22 shown in FIGS.
The temperature measurement is carried out in the same manner as the temperature measurement shown in FIG. It's okay.

〔Effect of the invention〕

As described above, according to the present invention, a temperature measuring element is disposed on the top surface of a substrate having almost the same shape as the wafer, a plurality of electrodes are provided, and each temperature measuring element is connected by wiring. Then, cover the surface with 4 protective films leaving only the necessary exposed surface of the magnetic poles so that the measurement signal can be output from each magnetic pole to the outside, and place this temperature measurement board on a stage to measure the temperature. As a result, the fM degree distribution of the (I) point on the main surface of the temperature measurement board can be accurately measured,
The degree of separation of the wafers on the juxtaposed wafer stages can be estimated, and surface treatment can be performed with precise formation.

[Brief explanation of drawings]

Fig. 1 is a perspective view of a singing device according to an embodiment of the present invention, Fig. 2 is an enlarged sectional view showing the temperature measuring element and electrode portion on the main surface of the substrate in Fig. A sectional view corresponding to FIG. 2 showing a second embodiment of the present invention; FIGS. 3(b) and 3(c) are detailed sectional views of parts A and B of the a) and (b) are a plan view and a front view of the temperature measuring element in Fig. 2, a wcb figure is a plan view of the temperature measuring cable in Fig. 3, and Fig. 6 shows the temperature measuring device m in Fig. 1 on a wafer. 7 is a sectional view showing a temperature measuring device fixed to a stage and measuring temperature; FIG. 7 is a perspective view from below of a temperature measuring device according to a third embodiment of the present invention; FIG.
Temperature measuring element and electricity on the main surface of the board shown in the figure! 9(a) is a sectional view corresponding to FIG. 8 showing the fourth embodiment of the present invention, and FIG. 9(b) is an enlarged sectional view showing the M part.
Figure 10 is a cross-sectional view showing the state in which the temperature measuring device shown in Figure M is fixed to the wafer stage and measuring temperature, and Figure 11 is a detailed cross-sectional view of the temperature measuring device shown in Figure M being fixed on the wafer stage. A cross-sectional view showing a state in which a semiconductor wafer is heated for 6IIJ.
12.22...Prefecture surveying element, 13, 23, 33
...'4 poles, 14.34...contact probe, 15.
24...Wiring, 17...4 protective film, 29.39...
・Wafer stage Note that the same reference numerals I/i in the figure indicate the corresponding parts.

Claims (1)

[Claims] A substrate having almost the same shape as a semiconductor wafer, a plurality of temperature measuring elements distributed over the main surface of this substrate, a plurality of electrodes provided on the substrate, and each of the temperature measuring elements formed on the substrate surface. The temperature measurement board is equipped with a temperature measurement board consisting of wiring that connects the temperature elements and the corresponding electrodes, and contact connection means for contacting each of the electrode surfaces and outputting measurement signals, and is fixed on the wafer stage with the main surface facing upward. A temperature measuring device characterized by being designed to warm up.