JPH02258048A - Method and apparatus for vacuum treatment - Google Patents

Abstract

PURPOSE:To control the attachment of small foreign substances to the surface of a test sample and prevent lowering of the yield rate of the test sample by providing an electrostatically attracting member for attaching small foreign substances such as the products of reaction resulting from the treatment of the test sample in a treatment chamber. CONSTITUTION:An etching device composed of a vacuum pump 4 for evacuating a treating chamber enclosed by an electrode 2 and a quartz bell jar 3 fixed in a frame 1, an earth electrode 5 and a high frequency power source 6 comprises an insulation covered electrostatically attracting member 7 provided in an etching gas exhaust passage and a DC power source 8. During etching treatment in this treatment chamber, DC voltage is applied from the power source 8 to the member 7 to generate a static power on the surface of the member 7. Small foreign substances such as the products of reaction resulting from the plasma etching treatment of a test sample 9 are attracted on the member 7 while being drawn out by the pump 4. As a result, the subject apparatus controls the attachment and accumulation of the small foreign substances to the surface of the test sample and prevents lowering of the yield rate of the test sample.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vacuum processing method and apparatus, and more particularly to a vacuum processing method and apparatus suitable for subjecting samples such as semiconductor element substrates to predetermined processing under vacuum. It is something.

[Conventional technology]

A sample such as a semiconductor element substrate is subjected to specified processing under vacuum, for example,
Techniques for etching and film forming using plasma include, for example, Japanese Utility Model Application Publication No. 153528/1983;
JP-A-63-241182, JP-A-63-241
Those described in JP-A No. 178, JP-A-63-230892, JP-A-63-227778, etc. are known.

[Problem to be solved by the invention]

In the above-mentioned conventional techniques, no consideration is given to the removal of minute foreign substances such as reaction products generated in the processing chamber during sample processing, for example. For this reason, there is a problem in that minute foreign matter adheres to the surface of the sample to be processed and the yield of the sample decreases. In addition, since microscopic foreign matter adheres to and accumulates on the walls of the processing chamber and its internal parts, maintenance such as cleaning must be carried out in a complicated manner, resulting in a reduction in throughput. ing.

A main object of the present invention is to provide a vacuum processing method and apparatus that can prevent a decrease in the yield of a sample by suppressing the attachment and accumulation of microscopic foreign matter on a surface to be processed of a sample in a processing chamber.

[Means to solve the problem]

The above purpose is to use a vacuum processing method that electrostatically attracts minute foreign objects in the processing chamber in which samples are processed, and to make the vacuum processing equipment capable of adsorbing minute foreign objects in the processing chamber in which samples are processed inside. This can be achieved by providing an electrostatic adsorption member.

[For production]

The electrostatic adsorption member provided in the processing chamber has static electricity accumulated on its surface and can adsorb and collect minute foreign matter. As a result, minute foreign matter in the processing chamber is attracted to the electrostatic attraction member. In this way, once the sample is attracted to the electrostatic attraction member, it will not be separated even by some impact, and the adhesion of the sample to the surface to be processed is suppressed.

〔Example〕 An embodiment of the present invention will be described below with reference to FIG.

Electrode 2 and quartz Pelger 3 fixed inside main body frame 1
Exhaust pump 4 for evacuating the processing chamber surrounded by
In an etching apparatus composed of a ground electrode, a pole 5, and a high-frequency power source 6, an electrostatic attraction member 7 covered with an insulator is installed in the exhaust path for etching processing, and a DC power source 8 for applying a DC voltage is attached.

In this way, during the etching process in the processing chamber, the DC power supply 8
By applying a DC voltage to the electrostatic adsorption member 7 from
Electrostatic force is generated on the surface of the electrostatic attraction member 7. As a result, in this case, minute foreign matter such as reaction products produced by etching the sample 9 using plasma is adsorbed by the electrostatic adsorption member 7 while being exhausted by the exhaust pump 4 .

In this example, the electrostatic force is used to attract and collect microscopic foreign particles, so while the electrostatic force is maintained, they will not separate due to some impact, and the sample will not adhere to the object to be processed. It is possible to prevent a decrease in the yield of finished samples. Moreover, since minute foreign matter easily separates when the electrostatic force is released, maintainability is good.

Furthermore, by making the electrostatic adsorption member mesh-shaped,
When installed in the exhaust route, the adsorption area becomes large and the adsorption effect improves.

Including the above, there is an effect of extending the maintenance cycle.

In addition to the above embodiments, there is also a plasma CVD apparatus.

The present invention can be similarly applied to sputter apparatuses and furthermore to apparatuses that process samples under vacuum.

〔Effect of the invention〕

According to the present invention, minute foreign matter in the processing chamber is electrostatically attracted, so that the foreign matter does not adhere to the surface of the sample to be processed.

This has the effect of suppressing deposition and preventing a decrease in sample yield.

[Brief explanation of drawings]

FIG. 1 is a longitudinal sectional view of a main part of a plasma etching apparatus according to an embodiment of the present invention. 2... Electrode, 4... Exhaust pump, 5.
...Earth 1! pole, 6...high frequency power supply,
7... Electrostatic adsorption member, 8... DC power supply agent, patent attorney Masaru Ogawa, male δ-111 & large V block

Claims (1)

[Scope of Claims] 1. A vacuum processing method characterized by electrostatically adsorbing minute foreign matter in a processing chamber in which a sample is processed. 2. A vacuum processing apparatus characterized by being provided with an electrostatic adsorption member capable of adsorbing minute foreign matter in a processing chamber in which a sample is processed. 3. The vacuum processing apparatus according to claim 2, wherein the electrostatic adsorption member is formed of a mesh material, and the member is provided in an exhaust path within the processing chamber.