JPH0226026A - Method and apparatus for surface treatment of silicon substrate - Google Patents
Method and apparatus for surface treatment of silicon substrateInfo
- Publication number
- JPH0226026A JPH0226026A JP17632888A JP17632888A JPH0226026A JP H0226026 A JPH0226026 A JP H0226026A JP 17632888 A JP17632888 A JP 17632888A JP 17632888 A JP17632888 A JP 17632888A JP H0226026 A JPH0226026 A JP H0226026A
- Authority
- JP
- Japan
- Prior art keywords
- silicon substrate
- hydrofluoric acid
- acid gas
- supply pipe
- gas supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 41
- 239000010703 silicon Substances 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 9
- 238000004381 surface treatment Methods 0.000 title claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000007789 gas Substances 0.000 claims abstract description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 5
- 239000011737 fluorine Substances 0.000 claims abstract description 5
- 239000005871 repellent Substances 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- 238000009736 wetting Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 7
- 238000011109 contamination Methods 0.000 abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 4
- UBAZGMLMVVQSCD-UHFFFAOYSA-N carbon dioxide;molecular oxygen Chemical compound O=O.O=C=O UBAZGMLMVVQSCD-UHFFFAOYSA-N 0.000 abstract description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 2
- 230000032683 aging Effects 0.000 abstract 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、シリコン基板を保管するにあたり、シリコン
基板の表面処理を行う方法及びその装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method and an apparatus for surface-treating a silicon substrate when storing the silicon substrate.
（従来の技術）
従来、シリコン基板を保管するにあたり、シリコン基板
を過酸化水素水、アンモニア水、水の混合液で洗浄し、
シリコン基板表面の汚れを洗い落とした後、■密閉容器
中にシリカゲル等の乾燥剤と一緒にシリコン基板を保管
し、或いは、■密閉容器中に窒素、アルゴン等の不活性
ガスを注入して保管していた。(Prior art) Conventionally, when storing silicon substrates, they are cleaned with a mixture of hydrogen peroxide, ammonia, and water.
After washing off the dirt on the surface of the silicon substrate, ■ store the silicon substrate in a sealed container with a desiccant such as silica gel, or ■ store it in a sealed container with an inert gas such as nitrogen or argon. was.
（発明が解決しようとする課題）
しかし、上記方法に依れば、シリコン基板の表面が親水
性のため、シリコン基板の表面が、大気雰囲気、不活性
ガス雰囲気下に存在する水分、酸素、二酸化炭素等と経
時的に化学変化を起こし、シリコン基板の表面に汚れを
生じるという問題があった。(Problem to be Solved by the Invention) However, according to the above method, since the surface of the silicon substrate is hydrophilic, the surface of the silicon substrate is exposed to moisture, oxygen, and dioxide present in the air or inert gas atmosphere. There is a problem in that chemical changes occur over time with carbon, etc., resulting in stains on the surface of the silicon substrate.
（課題を解決するための手段）
本発明は、上記課題を解決するためになされたもので、
洗浄したシリコン基板の表面を水蒸気で濡らした後、フ
ッ化水素酸ガスを供給して前記シリコン基板表面の自然
酸化膜を除去すると共に、該シリコン基板の表面にフッ
素の撥水性原子膜を形成することを特徴とするシリコン
基板の表面処理方法と、シリコン基板を収納する処理槽
本体内の上部にガス供給ノズルを設け、該ノズルには、
外部より水蒸気供給管、フッ化水素酸ガス供給管及び窒
素ガス供給管をそれぞれ開閉バルブを途中に介装して連
結し、更に前記処理槽本体に、ポンプと開閉バルブを途
中に介装した排気管を設けたシリコン基板の表面処理装
置を提供するものである。(Means for Solving the Problems) The present invention has been made to solve the above problems.
After wetting the surface of the cleaned silicon substrate with water vapor, hydrofluoric acid gas is supplied to remove the natural oxide film on the surface of the silicon substrate, and at the same time form a water-repellent atomic film of fluorine on the surface of the silicon substrate. A method for surface treatment of a silicon substrate, characterized in that a gas supply nozzle is provided at the upper part of a processing tank body housing a silicon substrate, the nozzle includes:
A water vapor supply pipe, a hydrofluoric acid gas supply pipe, and a nitrogen gas supply pipe are connected from the outside with on-off valves interposed in the middle, respectively, and a pump and an on-off valve are interposed in the middle of the treatment tank body for exhaust gas. The present invention provides a silicon substrate surface treatment device provided with a tube.
（作 用）
上記本発明方法及びその装置に依れば、事前にシリコン
基板の表面を水蒸気で濡らすことにより、事後の反応を
均一化することができる。そして、フッ化水素酸ガスに
よって、シリコン基板表面の自然酸化膜が除去されると
同時に、該表面にフッ素の原子膜が形成され、該原子膜
が撥水性であるゆえに、保管時においてシリコン基板へ
の水分の付着が非常に少なくなり、保管雰囲気中の水分
に溶は込んでいる酸素や二酸化炭素等によって生じる経
時的化学変化、更にほこの化学変化に起因する汚れの発
生が防止できる。また、上記本発明は、フッ化水素酸ガ
スと水蒸気による化学反応であるため、シリコン基板へ
の汚れの付着や金属汚染が少ない。(Function) According to the method and apparatus of the present invention described above, by wetting the surface of the silicon substrate with water vapor in advance, the subsequent reaction can be made uniform. Hydrofluoric acid gas removes the natural oxide film on the surface of the silicon substrate, and at the same time forms an atomic film of fluorine on the surface, and since this atomic film is water repellent, it does not stick to the silicon substrate during storage. This greatly reduces the amount of moisture adhering to the surface, and prevents chemical changes over time caused by oxygen, carbon dioxide, etc. dissolved in the moisture in the storage atmosphere, as well as the generation of stains caused by chemical changes on the surface. Furthermore, since the present invention involves a chemical reaction using hydrofluoric acid gas and water vapor, there is less dirt adhesion to the silicon substrate and less metal contamination.
（実施例） 以下、本発明を例示図面に基いて説明する。(Example) Hereinafter, the present invention will be explained based on illustrative drawings.
第１図は本発明方法を実施する装置例の断面図であって
、シリコン基板１を収納する処理槽本体２内の上部にガ
ス供給ノズル３を設け、該ノズル３には、外部より水蒸
気供給管４．フッ化水素酸ガス供給管５及び窒素ガス供
給管６をそれぞれ開閉バルブ７．８．９を途中に介装し
て連結し、更に前記処理槽本体２に、ポンプＰと開閉バ
ルブ１１を途中に介装した排気管１０を設けて構成して
いる。FIG. 1 is a sectional view of an example of an apparatus for carrying out the method of the present invention, in which a gas supply nozzle 3 is provided at the upper part of a processing tank body 2 that houses a silicon substrate 1, and water vapor is supplied to the nozzle 3 from the outside. Tube 4. The hydrofluoric acid gas supply pipe 5 and the nitrogen gas supply pipe 6 are connected by interposing on-off valves 7, 8, 9 in the middle, and furthermore, a pump P and an on-off valve 11 are connected to the processing tank main body 2 in the middle. It is configured by providing an interposed exhaust pipe 10.
そして、本発明に係る表面処理方法は、シリコン基板加
工の最終工程として、シリコン基板１をＮＨ，ＯＨ：
Ｈ２０□：水−１：３：１０、温度８０°Ｃの溶液で、
１０分間洗浄し、洗ったシリコン基板１を処理槽本体２
内に置く。Then, in the surface treatment method according to the present invention, as the final step of processing the silicon substrate, the silicon substrate 1 is treated with NH, OH:
H20□: Water - 1:3:10, a solution at a temperature of 80°C,
After washing for 10 minutes, the washed silicon substrate 1 is transferred to the processing tank body 2.
put it inside.
かくして、排気管１０のバルブ１１を開け、ポンプＰに
より処理槽本体２内の空気を排出する。そして、バルブ
１１を閉じ、次に水蒸気供給管４のバルブ７を開け、処
理槽本体２内に水蒸気を導入し、シリコン基板１を少し
湿らせる。次に水蒸気供給管４のバルブ７を閉じ、フッ
化水素酸ガス供給管５のバルブ８を開け、フッ化水素酸
ガス（ＨＦガス）を処理槽本体２内に導入し、シリコン
基板１上の酸化膜を除去する。そして、次にフッ化水素
酸ガス供給管５のバルブ８を閉じ、排気管１０のバルブ
１１と窒素ガス供給管６のバルブ９を開け、処理槽本体
２内のフッ化水素酸ガスを窒素と置換する。このガスの
置換により、フッ化水素酸ガスによる反応が停止する。Thus, the valve 11 of the exhaust pipe 10 is opened, and the air inside the processing tank body 2 is exhausted by the pump P. Then, the valve 11 is closed, and then the valve 7 of the water vapor supply pipe 4 is opened to introduce water vapor into the processing tank body 2 and slightly moisten the silicon substrate 1. Next, the valve 7 of the steam supply pipe 4 is closed, the valve 8 of the hydrofluoric acid gas supply pipe 5 is opened, and hydrofluoric acid gas (HF gas) is introduced into the processing tank body 2, and the Remove the oxide film. Then, close the valve 8 of the hydrofluoric acid gas supply pipe 5, open the valve 11 of the exhaust pipe 10 and the valve 9 of the nitrogen gas supply pipe 6, and convert the hydrofluoric acid gas in the processing tank body 2 into nitrogen. Replace. By replacing this gas, the reaction caused by the hydrofluoric acid gas is stopped.
上記の如く処理したシリコン基板１を、０℃の状態で２
時間、そして、３５°Ｃの状態で２時間、共に温度１０
０％の状態で交互に繰り返し置いて保管したときの、シ
リコン基板１表面の経時的化学変化による汚れの発生率
を調べたところ、第２図の実線で示す如きグラフが得ら
れた。これを従来の保管状態（−点鎖線で示す）と比較
すると、汚れの発生率が殆どないことが分る。The silicon substrate 1 treated as described above was placed at 0°C for 2 hours.
time and 2 hours at 35°C, both at 10°C.
When the rate of occurrence of contamination due to chemical changes over time on the surface of the silicon substrate 1 was investigated when the silicon substrate 1 was stored in a 0% condition and kept alternately, a graph as shown by the solid line in FIG. 2 was obtained. Comparing this with the conventional storage condition (indicated by the - dotted chain line), it can be seen that there is almost no incidence of staining.
（発明の効果）
以上説明したよ５うに、本発明に依れば、シリコン基板
の保管中に発生する経時的化学変化による汚れの発生を
防止でき、気体を用いた処理であるゆえに金属汚染も少
なく、これによりライフタイムが向上する等の効果を奏
するものである。(Effects of the Invention) As explained above, according to the present invention, it is possible to prevent the generation of contamination due to chemical changes over time that occur during storage of silicon substrates, and metal contamination can also be prevented because the treatment uses gas. This has the effect of improving lifetime.
第１図は本発明に使用する装置例の縦断面図、第２図は
従来法との比較において本発明の効果を示すグラフであ
る。
１・・・シリコン基板 ２・・・処理槽本体３・・
・ガス供給ノズル ４・・・水蒸気供給管５・・・フ
ッ化水素酸ガス供給管FIG. 1 is a longitudinal sectional view of an example of a device used in the present invention, and FIG. 2 is a graph showing the effects of the present invention in comparison with a conventional method. 1... Silicon substrate 2... Processing tank body 3...
・Gas supply nozzle 4...Steam supply pipe 5...Hydrofluoric acid gas supply pipe
Claims (2)
後、フッ化水素酸ガスを供給して前記シリコン基板表面
の自然酸化膜を除去すると共に、該シリコン基板の表面
にフッ素の撥水性原子膜を形成することを特徴とするシ
リコン基板の表面処理方法。(1) After wetting the surface of the cleaned silicon substrate with water vapor, hydrofluoric acid gas is supplied to remove the natural oxide film on the surface of the silicon substrate, and a water-repellent atomic film of fluorine is applied to the surface of the silicon substrate. 1. A method for surface treatment of a silicon substrate, characterized by forming.
ス供給ノズルを設け、該ノズルには、外部より水蒸気供
給管、フッ化水素酸ガス供給管及び窒素ガス供給管をそ
れぞれ開閉バルブを途中に介装して連結し、更に前記処
理槽本体に、ポンプと開閉バルブを途中に介装した排気
管を設けたことを特徴とするシリコン基板の表面処理装
置。(2) A gas supply nozzle is installed in the upper part of the processing tank body that houses the silicon substrate, and a water vapor supply pipe, a hydrofluoric acid gas supply pipe, and a nitrogen gas supply pipe are connected to the nozzle from the outside with opening/closing valves connected in the middle. 1. A surface processing apparatus for silicon substrates, characterized in that the processing tank body is further provided with an exhaust pipe having a pump and an on-off valve interposed therebetween.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17632888A JPH0226026A (en) | 1988-07-15 | 1988-07-15 | Method and apparatus for surface treatment of silicon substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17632888A JPH0226026A (en) | 1988-07-15 | 1988-07-15 | Method and apparatus for surface treatment of silicon substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0226026A true JPH0226026A (en) | 1990-01-29 |
Family
ID=16011668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17632888A Pending JPH0226026A (en) | 1988-07-15 | 1988-07-15 | Method and apparatus for surface treatment of silicon substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0226026A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06177073A (en) * | 1992-12-07 | 1994-06-24 | Nippon Ee S M Kk | Etching apparatus |
| JP2013143466A (en) * | 2012-01-11 | 2013-07-22 | Dainippon Screen Mfg Co Ltd | Substrate treatment method and substrate treatment apparatus |
| JP2013149934A (en) * | 2011-12-22 | 2013-08-01 | Dainippon Screen Mfg Co Ltd | Substrate processing method and substrate processing apparatus |
-
1988
- 1988-07-15 JP JP17632888A patent/JPH0226026A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06177073A (en) * | 1992-12-07 | 1994-06-24 | Nippon Ee S M Kk | Etching apparatus |
| JP2013149934A (en) * | 2011-12-22 | 2013-08-01 | Dainippon Screen Mfg Co Ltd | Substrate processing method and substrate processing apparatus |
| JP2013143466A (en) * | 2012-01-11 | 2013-07-22 | Dainippon Screen Mfg Co Ltd | Substrate treatment method and substrate treatment apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100332402B1 (en) | Semiconductor treatment method using HF and carboxylic acid mixture | |
| US5885361A (en) | Cleaning of hydrogen plasma down-stream apparatus | |
| KR100591723B1 (en) | Oxidation treatment method and oxidation treatment device | |
| JP2632262B2 (en) | Method for removing native oxide film in contact hole on silicon wafer | |
| WO2002047142A1 (en) | Method and apparatus for treating article to be treated | |
| JP2002313727A (en) | Semiconductor manufacturing apparatus cleaning method | |
| WO1999004420A1 (en) | Process for cleaning silicon semiconductor substrates | |
| JP3047248B2 (en) | Cleaning method | |
| JPH0226026A (en) | Method and apparatus for surface treatment of silicon substrate | |
| JPH02190472A (en) | Method for removing contamination after cleaning by fluorine-based gas in film forming operation system | |
| JPS61148820A (en) | Processing method | |
| TW563181B (en) | Oxide film forming method | |
| JP2783485B2 (en) | How to remove chlorine trifluoride gas | |
| JP2007109928A (en) | Method and apparatus for cleaning nitride semiconductor manufacturing equipment parts | |
| JPH05283386A (en) | Substrate surface treatment device | |
| JPS6370428A (en) | Plasma treating apparatus | |
| TW404853B (en) | Wet processing methods for the manufacture of electronic components using ozonated process fluids | |
| JP2632261B2 (en) | Method for removing oxide film on substrate surface | |
| JPH02106927A (en) | Manufacture of semiconductor device | |
| KR20010081981A (en) | Oxidation Apparatus and Method of Cleaning the Same | |
| JP2896005B2 (en) | Wafer cleaning method | |
| JP2632293B2 (en) | Selective removal method of silicon native oxide film | |
| JP2558273B2 (en) | Surface cleaning method | |
| JPH09148255A (en) | How to clean the inside of the reaction vessel | |
| JPH04155827A (en) | Cleaning method |