JPH02265006A - Magneto-resistance effect type thin film magnetic head - Google Patents
Magneto-resistance effect type thin film magnetic headInfo
- Publication number
- JPH02265006A JPH02265006A JP8551189A JP8551189A JPH02265006A JP H02265006 A JPH02265006 A JP H02265006A JP 8551189 A JP8551189 A JP 8551189A JP 8551189 A JP8551189 A JP 8551189A JP H02265006 A JPH02265006 A JP H02265006A
- Authority
- JP
- Japan
- Prior art keywords
- yoke
- magnetoresistive element
- magnetoresistive
- magnetic field
- head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野]
本発明は、磁気抵抗効果型薄膜磁気ヘッドに関し、特に
、再生出力を高めるようにし7た磁気紙t>を効果型薄
膜磁気ヘットに関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a magnetoresistive thin film magnetic head, and particularly relates to an effect type thin film magnetic head using a magnetic paper t> which is designed to increase reproduction output. be.
磁気抵抗効果型薄膜磁気ヘッドは、強磁性膜によ、って
単磁区化され、センス電流を通電されるMR素子を使用
して、磁気記録媒体から発生する信号磁界をMR素子に
印加し、この信号磁界の変化をセンス電流の電圧変化と
して取りだせるように構成したものであり、大別すれば
、両面シールド型−・ラドと呼ばれるものと、ヨーク型
ヘッド(以下、YMRヘッドという。)と呼ばれるもの
がある。両面シールド型ヘッドでは、MR素子は磁気ヘ
ッドの磁気記録媒体摺動面に露出する位置に配置され、
YMRヘッドではMR素子が磁気ヘッドの磁気記録媒体
摺動面から離れた位置に配置され、ヨークによって磁気
記録媒体摺動面からMR素子に信号磁界の変化を伝達す
るように構成される。YMRヘッドは、MR素子が磁気
ヘッドの磁気記録媒体摺動面に露出していないので、磁
気記録媒体摺動面の摩耗によるMR素子の損傷やMR素
子の腐食が生じ難い等の点で両面シールド型ヘッドより
も有利とされている。A magnetoresistive thin-film magnetic head uses an MR element that is made into a single magnetic domain by a ferromagnetic film and is energized with a sense current, and applies a signal magnetic field generated from a magnetic recording medium to the MR element. It is constructed so that changes in this signal magnetic field can be extracted as voltage changes in the sense current, and can be roughly divided into two types: double-shielded heads (referred to as double-shielded RADs) and yoke-type heads (hereinafter referred to as YMR heads). There is something called. In a double-sided shield type head, the MR element is placed at a position exposed to the sliding surface of the magnetic recording medium of the magnetic head.
In the YMR head, the MR element is arranged at a position away from the magnetic recording medium sliding surface of the magnetic head, and is configured to transmit changes in the signal magnetic field from the magnetic recording medium sliding surface to the MR element using a yoke. Since the MR element of the YMR head is not exposed on the magnetic recording medium sliding surface of the magnetic head, double-sided shielding prevents damage to the MR element due to abrasion of the magnetic recording medium sliding surface and corrosion of the MR element. It is said to be more advantageous than a mold head.
従来のYMRヘッドは、第7図ないし第9図に示すよう
に、磁気記録媒体9から発生する信号磁界を抵抗変化と
して検出するMR素子2と、ヘッドギャップ10からM
R素子2に磁束を導く上側フロントヨーク1、上側ハッ
クヨーク5及び下側ヨーク7と、MR素子2を単磁区状
態とする強磁性膜3・3と、MR素子2の幅方向(矢印
Yの方向)にバイアス磁界を印加するバイアス導体6と
、MR素子2の長手方向にセンス電流を流すとともに、
MR素子2の両端間の電圧を検出するための1対のり一
ト導体4・4とを備えている。これら上側フロントヨー
ク1、MR素子2、上側ハックヨーク5、バイアス導体
6及び下側ヨーク7の間には、それぞれ磁気的電気的な
絶縁層が設けられ、更に、これらを保護するために図示
しない保護層及び保護板が設けられる。また、上記リー
ド導体4・4のMR素子2との接続部及び強磁性膜3・
3は、YMRヘッドのMR素子2の長手方向の寸法を小
さくするため、上側フロントヨーク1及び上側ハックヨ
ーク5の両端面に接近した位置に配置されている。更に
、MR素子2における磁化容易軸の方向は、MR素子2
を作る際にMR素子2の長手方向に設定される。加えて
、磁気記録媒体9とヘッドとの間には、スペーシング(
隙間)8が設定される。As shown in FIGS. 7 to 9, a conventional YMR head includes an MR element 2 that detects a signal magnetic field generated from a magnetic recording medium 9 as a resistance change, and an MR element 2 that detects a signal magnetic field generated from a magnetic recording medium 9 as a resistance change, and
The upper front yoke 1, upper hack yoke 5, and lower yoke 7 that guide the magnetic flux to the R element 2, the ferromagnetic films 3, 3 that make the MR element 2 into a single domain state, and the width direction of the MR element 2 (direction of arrow Y) ), a bias conductor 6 applies a bias magnetic field to the MR element 2, and a sense current flows in the longitudinal direction of the MR element 2.
A pair of glue conductors 4 are provided for detecting the voltage between both ends of the MR element 2. A magnetic and electrical insulating layer is provided between the upper front yoke 1, the MR element 2, the upper hack yoke 5, the bias conductor 6, and the lower yoke 7, and furthermore, a protective layer (not shown) is provided to protect them. A layer and a protective plate are provided. In addition, the connection portion of the lead conductor 4, 4 with the MR element 2, and the ferromagnetic film 3,
3 is arranged close to both end surfaces of the upper front yoke 1 and the upper hack yoke 5 in order to reduce the longitudinal dimension of the MR element 2 of the YMR head. Furthermore, the direction of the axis of easy magnetization in the MR element 2 is
is set in the longitudinal direction of the MR element 2 when making the MR element 2. In addition, spacing (
gap) 8 is set.
MR素子2にセンス電流を流し、磁気記録媒体9を走行
させると、磁気記録媒体9から発生する信号磁界が上側
フロントヨーク1及び上側ハックヨーク5を介してMR
素子2に印加され、信号磁界の変化に対応してMR素子
2の両端の電圧が変化する。また、バイアス導体6に直
流電流を流すことにより、所望のバイアス磁界を発生さ
せてMR素子2に印加し、MR素子2の動作点が線型性
の良い点に設定される。更に、MR素子2と強磁性膜3
・3とを強磁性交換結合させてMR素子2の長手方向に
弱磁界を印加させることにより、MR2が単磁区状態に
され、MR素子2の内部の磁化が上記磁壁移動によって
不連続に変化することが防止され、いわゆるバルクハウ
ゼンノイズの発生が抑制される。When a sense current is applied to the MR element 2 and the magnetic recording medium 9 is run, a signal magnetic field generated from the magnetic recording medium 9 passes through the upper front yoke 1 and the upper hack yoke 5 to the MR element.
The voltage across the MR element 2 changes in response to changes in the signal magnetic field. Further, by passing a direct current through the bias conductor 6, a desired bias magnetic field is generated and applied to the MR element 2, and the operating point of the MR element 2 is set to a point with good linearity. Furthermore, the MR element 2 and the ferromagnetic film 3
・By ferromagnetic exchange coupling with MR element 3 and applying a weak magnetic field in the longitudinal direction of MR element 2, MR 2 is brought into a single domain state, and the magnetization inside MR element 2 changes discontinuously due to the domain wall movement. This prevents the occurrence of so-called Barkhausen noise.
なお、従来のYMRヘッドとしては、MR素子2の磁化
容易軸をMR素子2の長手方向に対して所定角度傾斜す
る傾斜方向に設定することにより、MR素子2の磁化容
易軸の角度分散に起因する磁化回転におけるスイッチン
グによるバルクハウゼンノイズの発生領域を動作範囲外
の磁界領域に限定させるように構成したものもある。In addition, in the conventional YMR head, by setting the easy axis of magnetization of the MR element 2 in an inclined direction that is inclined at a predetermined angle with respect to the longitudinal direction of the MR element 2, it is possible to prevent the magnetization caused by the angular dispersion of the easy axis of magnetization of the MR element 2. Some devices are configured to limit the generation area of Barkhausen noise due to switching in magnetization rotation to a magnetic field area outside the operating range.
ところが、次のような実験をした結果、従来のYMRヘ
ッドでは、リード導体4・4のMR素子2との接続部及
び強磁性膜3・3が、YMRヘッドのMR素子2の長手
方向の寸法を小さくするように上側フロントヨーク1及
び上側ハックヨーク5の両端面に接近した位置に配置さ
れているため、MR素子2の抵抗変化を検出する効率が
低くなり、再生出力が低くなることが分かった。However, as a result of the following experiment, it was found that in the conventional YMR head, the connection portions of the lead conductors 4 and 4 with the MR element 2 and the ferromagnetic films 3 and It was found that because the MR element 2 is placed close to both end surfaces of the upper front yoke 1 and the upper hack yoke 5 so as to make it smaller, the efficiency of detecting the resistance change of the MR element 2 is lowered, and the reproduction output is lowered. .
すなわち、非磁性一体の下側ヨーク7からなる疑似ヘッ
ドを使用し、このヘッドtT、 M R素子2の幅方向
に−様な交流磁界を印加して、スポット系約5μmのカ
ー効果測定装置により、MR素子20幅方向の中心付近
を長手方向に沿ってMR素子2の局所的な磁化の幅方向
成分の分布状態を測定し、印加磁界に対する磁化曲線よ
り磁化飽和する印加磁界Hsを求めた。この印加磁界H
Sは大きいほど磁界が固定化され、小さい程その局所的
な部分の磁化は信号磁界により回転1〜易く、感度が高
いことを意味している。That is, using a pseudo head consisting of a non-magnetic integrated lower yoke 7, an alternating current magnetic field of - is applied in the width direction of the head tT, MR element 2, and a Kerr effect measuring device with a spot system of about 5 μm is used to measure the magnetic field. The distribution state of the width direction component of the local magnetization of the MR element 2 was measured along the longitudinal direction near the center of the width direction of the MR element 20, and the applied magnetic field Hs at which the magnetization was saturated was determined from the magnetization curve for the applied magnetic field. This applied magnetic field H
The larger S is, the more the magnetic field is fixed, and the smaller S is, the more easily the magnetization of the local portion is rotated by the signal magnetic field, meaning that the sensitivity is high.
上記の測定結果は第13図に示され、強磁性膜3・3か
ら約5μmの範囲(第8図及び第9図でハツチングを施
した部分)ではその中間の部分に比べて極端に感度が低
下していることが認められる。ここで、第10図に示す
ようにMR素子2の幅をW、強磁性膜3・3で覆われて
いないMR素子2の長さをI7、MR素了2の膜厚をt
、磁化固定されるため抵抗変化しないM R素子2の領
域(磁化固定領域)長手方向の長さをC,MR素子2の
比抵抗をρ、MR素子2の比抵抗ρの最大変化量をΔρ
とすれば、次のようにして再生出力の効率低下が生じる
程度を見積もることができる。The above measurement results are shown in Figure 13, and the sensitivity is extremely high in the range of approximately 5 μm from the ferromagnetic films 3 and 3 (hatched areas in Figures 8 and 9) compared to the intermediate area. It is recognized that the situation is decreasing. Here, as shown in FIG. 10, the width of the MR element 2 is W, the length of the MR element 2 not covered with the ferromagnetic films 3 is I7, and the film thickness of the MR element 2 is t.
, C is the longitudinal length of the region of MR element 2 (magnetization fixed region) where the resistance does not change because the magnetization is fixed, ρ is the specific resistance of MR element 2, and Δρ is the maximum change in the specific resistance ρ of MR element 2.
If so, the extent to which the efficiency of reproduction output will decrease can be estimated as follows.
すなわち、MR素子部分の抵抗Rば、 ■。That is, the resistance R of the MR element part is ■.
最大変化抵抗ΔRば、
従って、抵抗変化率ΔR/Rば、
RWT ρ
であり、MR素了2の全領域が抵抗変化する場合(C=
O)の抵抗変化率と比較して、
(I、−20)/L
倍低下することになる。ここで、第10図に示すように
L−50um、C=5μmとすると、(L−2C)/L
=0.75
となり、再生出力の効率は25%低下することになる。If the maximum change resistance ΔR is, Therefore, the resistance change rate ΔR/R is RWT ρ, and when the resistance changes in the entire area of MR clear 2 (C=
Compared to the rate of change in resistance of O), the rate of change in resistance is reduced by a factor of (I, -20)/L. Here, if L-50um and C=5μm as shown in Figure 10, (L-2C)/L
= 0.75, and the efficiency of reproduction output decreases by 25%.
また、高密度記録のためトラック幅が狭くなると、MR
素子2の長ざLが短くなるのに対して磁化固定領域の長
さCは殆ど変化しないので、再生出力が一層低下するご
とになる。In addition, as the track width becomes narrower due to high-density recording, MR
Although the length L of the element 2 becomes shorter, the length C of the magnetization fixed region hardly changes, so that the reproduction output is further reduced.
シールド型ヘッドにおいても、このように再生出力の効
率が低く、また、小型化tこ伴って再生出力の効率が一
層低下するという問題があることば同様である。The shield type head also has the same problem of low reproduction output efficiency, and as the size of the head decreases, the reproduction output efficiency further decreases.
本発明は、上記の事情を考慮してなされたものであり、
再生出力を高めるようにした磁気抵抗効果型薄膜磁気ヘ
ッドの提供を目的とする。The present invention has been made in consideration of the above circumstances,
An object of the present invention is to provide a magnetoresistive thin film magnetic head that increases reproduction output.
本発明の磁気抵抗効果型薄膜磁気ヘッドは、磁気記録媒
体から発生ずる信号磁界を抵抗変化として検出するMR
素子と、ヘッドギャップからMR素子に磁束を導くヨー
クと、MR素子を単磁区状態とする強磁性膜と、MR素
子の幅方向にバイアス磁界を印加するバイアス導体と、
M R素子の長手方向にセンス電流を流すとともに該M
R素子の両端に発生ずる電圧変化を取り出すための1対
のリード導体とを備えた構成を前提とするものであって
、上記の目的を達成するため、次のような手段を講しる
。The magnetoresistive thin film magnetic head of the present invention is an MR head that detects a signal magnetic field generated from a magnetic recording medium as a resistance change.
an element, a yoke that guides magnetic flux from the head gap to the MR element, a ferromagnetic film that puts the MR element in a single domain state, a bias conductor that applies a bias magnetic field in the width direction of the MR element,
A sense current is passed in the longitudinal direction of the M R element, and the M
The present invention is based on a configuration including a pair of lead conductors for extracting voltage changes occurring across the R element, and in order to achieve the above object, the following measures are taken.
ずなわら、士、記リード導体のMR素子との接続部が上
記ヨークと対向するMR素子の部分よりも所定量以上夕
(側の部分でMR素子に接続され、上記強磁性膜がMR
素子のリード導体接続部分収トに外側に配置された構成
となっている。However, the connection part of the lead conductor with the MR element is connected to the MR element by a predetermined amount more than the part of the MR element facing the yoke, and the ferromagnetic film is connected to the MR element.
The structure is such that it is disposed outside the lead conductor connection portion of the element.
(作 用〕
上記の構成において、MR素子は強磁性膜により単磁区
状態に置かれるとともに、バイアス導体によって形成さ
れるバイアス磁界によって動作点が線型性の良い点に設
定される。そして、磁気記録媒体によって発生される信
号磁界の磁束はヨークによってヘッドギャップからMR
素子に導くことにより、信号磁界の変化をこれに対応し
て変化するMR素子の抵抗変化に変換し、MR素子の両
端子間型圧として取り出すごとになる。ここで、強磁性
膜をリード導体のMR素子との接続部が上記ヨークと対
向するMR素了の部分よりも所定量以上外側に配置する
ことにより、MR素子の磁化固定領域をヨークと対向す
る磁気抵抗効果素子の部分の外側に設定することができ
、ヨークと対向する磁気抵抗効果素子の部分全体にわた
って信号磁界の変化に対応する磁化の回転が可能になり
、磁気抵抗効果を高めて再生出力の効率を高めることが
できる。(Function) In the above configuration, the MR element is placed in a single domain state by the ferromagnetic film, and the operating point is set at a point with good linearity by the bias magnetic field formed by the bias conductor. The magnetic flux of the signal magnetic field generated by the medium is transferred from the head gap to the MR by the yoke.
By guiding the magnetic field to the element, a change in the signal magnetic field is converted into a corresponding change in resistance of the MR element, which is extracted as the mold pressure between both terminals of the MR element. Here, by arranging the ferromagnetic film so that the connecting portion of the lead conductor with the MR element is a predetermined amount or more outside the MR element facing the yoke, the magnetization fixed region of the MR element faces the yoke. It can be set outside the magnetoresistive element, and enables rotation of magnetization in response to changes in the signal magnetic field across the entire part of the magnetoresistive element facing the yoke, increasing the magnetoresistive effect and increasing reproduction output. efficiency can be increased.
本発明において、リード導体の磁気抵抗効果素子との接
続部が上記ヨークと対向する磁気抵抗効果素子の部分か
ら離れる距離は、5〜10μmとすることが好ましく、
この距離が5μmより小さくなると再生出力を高める効
果が低減するので好ましくなく、この距離が10μmを
越えて大きくなると、ヘッドの長さが大きくなり過ぎる
ので好ましくない。In the present invention, the distance between the connection portion of the lead conductor and the magnetoresistive element from the portion of the magnetoresistive element facing the yoke is preferably 5 to 10 μm,
If this distance is smaller than 5 μm, the effect of increasing the reproduction output will be reduced, which is undesirable. If this distance is larger than 10 μm, the length of the head will become too large, which is not preferable.
また、本発明において、リード導体を強磁性膜よりもヨ
ークの端面側に拡大して形成し、信号磁界により磁化回
転可能な磁気抵抗効果素子の領域に接続することができ
る。この場合には、リード導体間に磁化固定されたMR
素子の領域が無くなるので、再生出力を一層高めること
ができる。Further, in the present invention, the lead conductor can be formed to be expanded closer to the end surface side of the yoke than the ferromagnetic film, and can be connected to the region of the magnetoresistive element whose magnetization can be rotated by a signal magnetic field. In this case, MR whose magnetization is fixed between the lead conductors
Since the element area is eliminated, the reproduction output can be further increased.
第1図ないし第3図は本発明の一実施例に係るYMRヘ
ッドを示すもの、である。1 to 3 show a YMR head according to an embodiment of the present invention.
このYMRヘッドは、例えば多結晶Ni−Znフェライ
ト基板、単結晶あるいは多結晶Mn−Znフェライト基
板等の高透磁率磁性体からなる下側ヨーク7を備え、下
側ヨーク7の上側に上側フロントヨーク1及び下側ハッ
クヨーク5が配設される。上側フロントヨーク1は下側
ヨーク7の前端面7aから後方に延設され、上側ハック
ヨーク5は上側フロントヨーク1の後方に適当な間隔を
おいて更に後方に延設されている。上側フロントヨーク
1は、その前端部においては下側ヨーク7との間にヘッ
ドギャップ10を隔てて対面させてあり、後端側で斜め
上に股上がり状に折り曲げられる。This YMR head includes a lower yoke 7 made of a high magnetic permeability magnetic material such as a polycrystalline Ni-Zn ferrite substrate, a single crystal or a polycrystalline Mn-Zn ferrite substrate, and an upper front yoke above the lower yoke 7. 1 and a lower hack yoke 5 are provided. The upper front yoke 1 extends rearward from the front end surface 7a of the lower yoke 7, and the upper hack yoke 5 extends further rearward from the upper front yoke 1 at an appropriate interval. The upper front yoke 1 faces the lower yoke 7 at its front end with a head gap 10 in between, and is bent obliquely upward at its rear end.
上側バックヨーク5の前端面ば、上側フロントヨーク1
の後端面に適当な間隔を置いて対向させてあり、後方で
斜め下に段落ち状に折り曲げて下側ヨーク7に接続しで
ある。これら上側フロントヨーク1と上側へツクヨーク
5とは例えば0. 5〜1.0μm程度の膜厚のパーマ
ロイで作られ、磁気記録媒体9において発生した信号磁
界をヘッドギャップ10からMR素子2に導く磁束導入
路を構成している。The front end surface of the upper back yoke 5 is the upper front yoke 1.
They are opposed to each other at an appropriate distance from the rear end surface, and are bent diagonally downward in a step shape at the rear and connected to the lower yoke 7. The upper front yoke 1 and the upper front yoke 5 are, for example, 0. It is made of permalloy with a film thickness of about 5 to 1.0 μm, and constitutes a magnetic flux introduction path that guides the signal magnetic field generated in the magnetic recording medium 9 from the head gap 10 to the MR element 2.
磁気記録媒体9から発生する信号磁界を抵抗変化として
検出するMR素子2は、例えば200〜400人の膜厚
のパーマロイで形成され、上側フロントヨーク1及び上
側バックヨーク50間の隙間の下側に適当な絶縁層を介
して配設される。このMR素子2の幅方向の端部は、そ
れぞれ上側フロントヨーク1の後端部あるいは上側バッ
クヨーク5の前端部と0.5〜1.5μm程度オーバー
ラツプさせである。また、その磁化容易軸は、MR素子
2の長手方向に対して約10〜40°傾斜した傾斜方向
に設定してもよいが、ここでは、MR素子2の長手方向
に設定されている。The MR element 2, which detects the signal magnetic field generated from the magnetic recording medium 9 as a resistance change, is formed of permalloy with a film thickness of 200 to 400, for example, and is located below the gap between the upper front yoke 1 and the upper back yoke 50. It is arranged through a suitable insulating layer. The ends of the MR element 2 in the width direction overlap the rear end of the upper front yoke 1 or the front end of the upper back yoke 5 by about 0.5 to 1.5 μm, respectively. Further, the axis of easy magnetization may be set in an inclined direction that is inclined by about 10 to 40 degrees with respect to the longitudinal direction of the MR element 2, but in this case, it is set in the longitudinal direction of the MR element 2.
MR素子2の両端部の上面には、良好な導電性と保磁力
の大きなCo−P、Ni−Co、N1Co−P等の強磁
性体からなる強磁性膜3・3が形成される。この強磁性
膜3・3は、上側フロントヨーク1及び上側ハックヨー
ク5の両端面から外側に5〜10μmの間隔をおいた位
置に形成され、その膜厚は1000〜2000人とされ
る。On the upper surface of both ends of the MR element 2, ferromagnetic films 3 made of a ferromagnetic material such as Co--P, Ni--Co, or N1Co--P having good conductivity and large coercive force are formed. The ferromagnetic films 3 are formed at a distance of 5 to 10 μm outward from both end surfaces of the upper front yoke 1 and the upper hack yoke 5, and have a thickness of 1000 to 2000 μm.
これら強磁性膜3・3の上側に、更に例えばAlCu膜
等の良好な導電性を有する薄膜からなるリード導体4・
4が接合される。Further, on the upper side of these ferromagnetic films 3, lead conductors 4, made of a thin film having good conductivity such as an AlCu film, etc.
4 are joined.
MR素子2と下側ヨーク7と間には、これらとそれぞれ
適当な絶縁層を介してバイアス導体6が配設される。こ
のバイアス導体6は例えばAlCu膜で作られ、これに
直流を通電することによりMR素子2の幅方向に所望の
強さのバイアス磁界を印加できるようになっている。A bias conductor 6 is disposed between the MR element 2 and the lower yoke 7 via appropriate insulating layers. This bias conductor 6 is made of, for example, an AlCu film, and by passing a direct current through it, a bias magnetic field of desired strength can be applied in the width direction of the MR element 2.
尚、上記磁気記録媒体9ば、−・ラドギャップ10の前
方のスペーシング8を隔てた位置を通って上下方向(矢
印Zの方向)に走行するように構成され、ヘッドギャッ
プ10の大きさは実際の記録される最小波長0.5μm
に対応して、これよりも小さい0.2〜0.3μm程度
に設定される。The magnetic recording medium 9 is configured to run in the vertical direction (in the direction of arrow Z) through a position in front of the rad gap 10 across the spacing 8, and the size of the head gap 10 is as follows. Actual minimum recorded wavelength 0.5μm
Corresponding to this, it is set to about 0.2 to 0.3 μm, which is smaller than this.
上記のYMRヘッドにおいては、強磁性膜3・3によっ
て磁化固定される領域が、上側フロントヨーク1及び上
側バックヨーク5の両端面から外側に位置する。この上
側フロントヨーク1及び上側へツクヨーク5の両端面に
対向するMR素子2の部分では、上側フロントコーク1
及び上側ハックヨーク5を介してヘッドギャップ10か
ら伝達される信号磁界に対応し7て磁化回転が可能であ
り、磁界信号の変化を効率よく抵抗変化に変換すること
ができ、再生出力が効率良く得られる。上記のようにし
て、このY M Rヘッドの再生出力の効率を、第11
図に示すように、L、−40μm、 C−5μmとして
見積もると、
ΔR/R=0.8Δρ/ρ
となり、再生出力の低−F !;J:約20%に+lよ
り、従来例における抵抗変化率(0,75Δρ/ρ)に
比べると、
(25−20)÷75X100#6%
の出力増加が得られるごとになる。In the YMR head described above, the region whose magnetization is fixed by the ferromagnetic films 3 is located outside from both end surfaces of the upper front yoke 1 and the upper back yoke 5. In the portion of the MR element 2 facing both end surfaces of the upper front yoke 1 and the upper front yoke 5, the upper front cork 1
The magnetization can be rotated in response to the signal magnetic field transmitted from the head gap 10 via the upper hack yoke 5, and changes in the magnetic field signal can be efficiently converted into resistance changes, and reproduction output can be efficiently obtained. It will be done. As described above, the efficiency of the reproduction output of this YMR head is determined by the 11th
As shown in the figure, when L is estimated as -40μm and C-5μm, ΔR/R=0.8Δρ/ρ, and the reproduction output is low -F! ; J: Approximately 20% +l, so compared to the resistance change rate (0.75Δρ/ρ) in the conventional example, an output increase of (25-20)÷75×100#6% can be obtained.
第4図ないし第6図は、本発明の他の実施例に係るYM
Rヘッドを示す。FIGS. 4 to 6 show YM according to other embodiments of the present invention.
R head is shown.
本実施例では、リ−1’導体4・4の前端部4a・4a
が、強磁11膜3・3の北側から上側フロントヨーク1
及び上側バックヨーク5の両端面側に拡大されて、リー
ド導体4・4の一部分が信号(n界に対応して磁化回転
が可能なMR素了2の領域に直接接合されている。この
場合、リード′導体4・4が信号磁界に対応して磁化回
転が可能なMR素子2の領域に直接接合されているので
、第12図に示すように、磁化固定領域の長さC=Oと
なり、MR素子部分の抵抗値Rを、
R=L/Wt・ρ
最大変化抵抗ΔRを、
ΔR=L/Wt・Δρ
とすることができ、ΔR/R−Δρ/ρとなって、従来
のYMRヘットに比べると、
25÷75X100°−133%
の出力増加となる。In this embodiment, the front ends 4a, 4a of the lead 1' conductors 4, 4
is the upper front yoke 1 from the north side of the ferromagnetic 11 film 3.
It is enlarged to both end surfaces of the upper back yoke 5, and a portion of the lead conductors 4 are directly connected to the region of the MR element 2 where magnetization can be rotated in response to the signal (n field). , since the lead conductors 4 and 4 are directly bonded to the region of the MR element 2 where the magnetization can rotate in response to the signal magnetic field, the length of the magnetization fixed region becomes C=O, as shown in FIG. , the resistance value R of the MR element part can be set as R=L/Wt・ρ, and the maximum change resistance ΔR can be set as ΔR=L/Wt・Δρ, which becomes ΔR/R−Δρ/ρ, which is the same as that of conventional YMR. Compared to the head, the output is increased by 25÷75X100°-133%.
尚、上記の各実施例は、Y M Rヘッドについて説明
したが、両面シールド型ヘッドにも本発明を適用できる
ことは勿論である。Although each of the above embodiments has been described with respect to a YMR head, it goes without saying that the present invention can also be applied to a double-sided shield type head.
(発明の効果〕
本発明の磁気抵抗効果型薄膜磁気ヘッドは、以−トのよ
うに、リード導体の磁気抵抗効果素子との接続部が上記
ヨークと対向する磁気抵抗効果素子の部分よりも所定量
以上外側の部分で磁気抵抗効果素子に接続され、上記強
磁性膜が磁気抵抗効果素子のリード導体接続部う(以−
[−に外側に配置しCあるので、強磁性膜によって磁化
固定されるMR素子の領域が磁気記録媒体の信号磁界を
ヘッドギャップからMR素子に印加するヨークに対向す
る領域の夕)側に位置させて、磁気記録媒体で発生され
る信号磁界を効率良<MR素子の抵抗変化とし′ζ検出
することができ、高い再仕出力を得ることができる。(Effects of the Invention) As described above, in the magnetoresistive thin-film magnetic head of the present invention, the connection portion of the lead conductor with the magnetoresistive element is located at a position lower than the portion of the magnetoresistive element that faces the yoke. The ferromagnetic film is connected to the magnetoresistive element at the outer part of the magnetoresistive element, and the ferromagnetic film connects to the lead conductor connection part of the magnetoresistive element (hereafter
Since the MR element is placed outside the ferromagnetic film, the region of the MR element whose magnetization is fixed by the ferromagnetic film is located on the evening side of the region facing the yoke that applies the signal magnetic field of the magnetic recording medium to the MR element from the head gap. As a result, the signal magnetic field generated in the magnetic recording medium can be efficiently detected as a resistance change of the MR element, and a high redistribution force can be obtained.
特に本発明において、強磁性膜をヨークの端面から5〜
10μm隔てた位置に設りる場合には、ヘットを大型化
させることなく強磁性膜によって磁化固定されるMR素
子の領域が磁気記録媒体の信号磁界をヘッドギャップか
らMR素子に印加するヨークに対向する領域の外側に位
置させて、再生出力を高めることができる。In particular, in the present invention, the ferromagnetic film is
In the case of installing the MR elements at positions separated by 10 μm, the area of the MR element whose magnetization is fixed by the ferromagnetic film faces the yoke that applies the signal magnetic field of the magnetic recording medium to the MR element from the head gap without increasing the size of the head. The playback output can be increased by positioning it outside the area.
また、リード導体が強磁性膜よりもヨークの端面側に拡
大され、信号磁界により磁化回転可能な磁気抵抗効果素
子の領域に接続させる場合には、磁化固定されたM R
素子の領域の内側にリード導体を接続できるので、再生
出力を一層高めることができる等の効果を奏する。In addition, when the lead conductor is expanded closer to the end surface side of the yoke than the ferromagnetic film and is connected to the region of the magnetoresistive element whose magnetization can be rotated by the signal magnetic field, the magnetization of the M R is fixed.
Since the lead conductor can be connected inside the region of the element, it is possible to achieve effects such as further increasing the reproduction output.
第1図ないし第3図は本発明の一実施例に係るYMRヘ
ットを示すものであって、第1図は斜視図、第2図は平
面図、第3図は第2図のA−A線縦断面図である。
第4図ないし第6図は本発明の他の実施例に係るYMR
ヘッドを示すものであって、第4図は斜視図、第5図は
平面図、第6図は第5図のB−B線縦断面図である。
第7図ないし第9図は従来例のYMRヘッドを示し、第
7図は斜視図、第8図は平面図、第9図は第8図のI)
−D線縦断面図である。
第10図は、従来の磁気抵抗効果型薄膜磁気ヘッドの抵
抗変化率を算出するだめの模式図である。
第11図は、本発明の一実施例に係るYMRヘッドの抵
抗変化率を算出するための模式図である。
第12図は、本発明の他の実施例に係るYMRヘッドの
抵抗変化率を算出するだめの模式図であ第13図は、従
来の磁気抵抗効果型薄膜磁気ヘッドのMR素子上の磁化
状態を示す特性図である。
1は上側フロントヨーク、2はMR素子、3は強磁性膜
、4はリード導体、5は上側ハックヨーク、6はバイア
ス導体、7は下側ヨーク、9は磁気記録媒体、10はへ
ラドギャップである。
特許出願人 シャープ 株式会社−J円
O
(○e)
第
13図
\ 7
\〜 −8,x/
x−X−X−X−X−X−X−X1 to 3 show a YMR head according to an embodiment of the present invention, in which FIG. 1 is a perspective view, FIG. 2 is a plan view, and FIG. 3 is an A-A in FIG. FIG. FIGS. 4 to 6 show YMR according to other embodiments of the present invention.
4 is a perspective view, FIG. 5 is a plan view, and FIG. 6 is a longitudinal sectional view taken along the line B--B in FIG. 5, showing the head. Figures 7 to 9 show conventional YMR heads, where Figure 7 is a perspective view, Figure 8 is a plan view, and Figure 9 is I) of Figure 8.
-D is a vertical cross-sectional view. FIG. 10 is a schematic diagram showing how to calculate the resistance change rate of a conventional magnetoresistive thin film magnetic head. FIG. 11 is a schematic diagram for calculating the resistance change rate of a YMR head according to an embodiment of the present invention. FIG. 12 is a schematic diagram for calculating the resistance change rate of a YMR head according to another embodiment of the present invention. FIG. 13 is a diagram showing the state of magnetization on the MR element of a conventional magnetoresistive thin film magnetic head. FIG. 1 is an upper front yoke, 2 is an MR element, 3 is a ferromagnetic film, 4 is a lead conductor, 5 is an upper hack yoke, 6 is a bias conductor, 7 is a lower yoke, 9 is a magnetic recording medium, and 10 is a helad gap. be. Patent applicant Sharp Co., Ltd. - J Yen O (○e) Figure 13\7 \~ -8,x/ x-X-X-X-X-X-X-X
Claims (1)
て検出する磁気抵抗効果素子と、ヘッドギャップから磁
気抵抗効果素子に磁束を導くヨークと、磁気抵抗効果素
子を単磁区状態とする強磁性膜と、磁気抵抗効果素子の
幅方向にバイアス磁界を印加するバイアス導体と、磁気
抵抗効果素子の長手方向にセンス電流を流すとともに該
磁気抵抗効果素子の両端に発生する電圧変化を取り出す
ための1対のリード導体とを備えた磁気抵抗効果型薄膜
磁気ヘッドにおいて、 上記リード導体の磁気抵抗効果素子との接続部が上記ヨ
ークと対向する磁気抵抗効果素子の部分よりも所定量以
上外側の部分で磁気抵抗効果素子に接続され、上記強磁
性膜が磁気抵抗効果素子のリード導体接続部分以上に外
側に配置されていることを特徴とする磁気抵抗効果型薄
膜磁気ヘッド。 2、上記強磁性膜は、上記ヨークと対向する磁気抵抗効
果素子の部分よりも5〜10μm離れた位置に配置され
ている請求項第1項に記載の磁気抵抗効果型薄膜磁気ヘ
ッド。 3、上記リード導体は、強磁性膜よりもヨークの端面側
に拡大され、信号磁界により磁化回転可能な磁気抵抗効
果素子の領域に接続されている請求項第1項に記載の磁
気抵抗効果型薄膜磁気ヘッド。[Claims] 1. A magnetoresistive element that detects a signal magnetic field generated from a magnetic recording medium as a change in resistance, a yoke that guides magnetic flux from a head gap to the magnetoresistive element, and a magnetoresistive element that is in a single domain state. a ferromagnetic film that applies a bias magnetic field in the width direction of the magnetoresistive element, a bias conductor that applies a bias magnetic field in the width direction of the magnetoresistive element, and a sense current that flows in the longitudinal direction of the magnetoresistive element and a voltage change that occurs at both ends of the magnetoresistive element. In a magnetoresistive thin film magnetic head comprising a pair of lead conductors for taking out, the connection portion of the lead conductor with the magnetoresistive element is larger than the portion of the magnetoresistive element facing the yoke by a predetermined amount or more. 1. A magnetoresistive thin film magnetic head connected to a magnetoresistive element at an outer portion thereof, the ferromagnetic film being disposed further outward than a lead conductor connecting portion of the magnetoresistive element. 2. The magnetoresistive thin film magnetic head according to claim 1, wherein the ferromagnetic film is disposed 5 to 10 μm away from a portion of the magnetoresistive element facing the yoke. 3. The magnetoresistive type according to claim 1, wherein the lead conductor is expanded closer to the end surface side of the yoke than the ferromagnetic film and is connected to a region of the magnetoresistive element whose magnetization can be rotated by a signal magnetic field. Thin film magnetic head.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8551189A JPH02265006A (en) | 1989-04-04 | 1989-04-04 | Magneto-resistance effect type thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8551189A JPH02265006A (en) | 1989-04-04 | 1989-04-04 | Magneto-resistance effect type thin film magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02265006A true JPH02265006A (en) | 1990-10-29 |
Family
ID=13860952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8551189A Pending JPH02265006A (en) | 1989-04-04 | 1989-04-04 | Magneto-resistance effect type thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02265006A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0830929A (en) * | 1994-07-14 | 1996-02-02 | Nec Corp | Magneto-resistance effect element |
-
1989
- 1989-04-04 JP JP8551189A patent/JPH02265006A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0830929A (en) * | 1994-07-14 | 1996-02-02 | Nec Corp | Magneto-resistance effect element |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0279536B1 (en) | Magnetoresistive head and process for its manufacture | |
| US5193038A (en) | Shorted dual element magnetoresistive reproduce head exhibiting high density signal amplification | |
| EP0279535B1 (en) | Head comprising a magnetoresistive sensor | |
| US5097372A (en) | Thin film magnetic head with wide recording area and narrow reproducing area | |
| US4734644A (en) | Flux cancelling yoke type magnetic transducer head | |
| US5475550A (en) | Enhanced cross-talk suppression in magnetoresistive sensors | |
| JP3180785B2 (en) | Yoke type magnetoresistive head, yoke type magnetoresistive composite thin film head, and magnetic storage device | |
| US5491606A (en) | Planar magnetoresistive head with an improved gap structure | |
| EP0279537A2 (en) | Magnetoresistive sensor and process for its manufacture | |
| JP2662334B2 (en) | Thin film magnetic head | |
| JPH02265006A (en) | Magneto-resistance effect type thin film magnetic head | |
| US5563753A (en) | Contact scheme for minimizing inductive pickup in magnetoresistive read heads | |
| JPH1021513A (en) | Magnetoresistive transduction device | |
| JPH08203032A (en) | Magnetoresistive effect reproducing head | |
| JPH0528436A (en) | Magnetoresistive head | |
| US20020018324A1 (en) | Ferromagnetic tunneling magneto-resistive head | |
| JP2697422B2 (en) | Magnetoresistive head | |
| JPH052721A (en) | Magnetic head | |
| WO1998016921A1 (en) | Magnetoresistive head having shorted shield configuration for inductive pickup minimization | |
| JPH09153652A (en) | Magnetoresistance effect element | |
| JPS6015813A (en) | thin film magnetic head | |
| JPH05266435A (en) | Thin film magnetic head | |
| JPH0325714A (en) | Magneto-resistance effect type thin-film magnetic head | |
| JPH06223333A (en) | Magnetoresistive effect reproducing head | |
| JPH06187615A (en) | Magnetoresistive effect reproducing head |