JPH02267106A - Production of superconducting device - Google Patents
Production of superconducting deviceInfo
- Publication number
- JPH02267106A JPH02267106A JP1089101A JP8910189A JPH02267106A JP H02267106 A JPH02267106 A JP H02267106A JP 1089101 A JP1089101 A JP 1089101A JP 8910189 A JP8910189 A JP 8910189A JP H02267106 A JPH02267106 A JP H02267106A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- superconducting
- film
- temperature
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000010438 heat treatment Methods 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 150000001875 compounds Chemical class 0.000 claims abstract description 26
- 239000000203 mixture Substances 0.000 claims abstract description 20
- 239000011343 solid material Substances 0.000 claims abstract description 14
- 239000002887 superconductor Substances 0.000 claims abstract description 10
- 150000004820 halides Chemical class 0.000 claims abstract description 8
- 239000012159 carrier gas Substances 0.000 claims abstract description 5
- 239000000470 constituent Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 7
- 230000001376 precipitating effect Effects 0.000 claims 1
- 239000010453 quartz Substances 0.000 abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 12
- 239000007789 gas Substances 0.000 abstract description 11
- 230000015572 biosynthetic process Effects 0.000 abstract description 10
- 239000000463 material Substances 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 5
- 239000000835 fiber Substances 0.000 abstract description 4
- 239000007787 solid Substances 0.000 abstract description 4
- 238000000926 separation method Methods 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 25
- 239000012071 phase Substances 0.000 description 19
- 239000010409 thin film Substances 0.000 description 14
- 238000001947 vapour-phase growth Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910014454 Ca-Cu Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UNMYWSMUMWPJLR-UHFFFAOYSA-L Calcium iodide Chemical compound [Ca+2].[I-].[I-] UNMYWSMUMWPJLR-UHFFFAOYSA-L 0.000 description 1
- 229910001640 calcium iodide Inorganic materials 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は、超電導トランジスタ、超電導センサ等の製造
に適用することができる超電導素子の製造方法に関する
。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a method for manufacturing a superconducting element that can be applied to manufacturing superconducting transistors, superconducting sensors, and the like.
（ロ）従来の技術
近年、Ｙ−Ｂａ−Ｃｕ−０系で代表される酸化物焼結体
が液体窒素の沸点（７７ＩＯより高い臨界温度で超電導
状態に入ることが見出されて脚光を浴びている。(b) Conventional technology In recent years, sintered oxides represented by the Y-Ba-Cu-0 system have been in the spotlight since it was discovered that they enter a superconducting state at a critical temperature higher than the boiling point of liquid nitrogen (77IO). ing.
超電導トランジスタ、超電導センサー等の超電導素子は
、超電導体薄膜の形成を前提とするものであり、この薄
膜を、たとえば前記酸化物焼結体を用いて、スパッタリ
ング法により形成することが知らｈている。このスパッ
タリング法は、前記酸化物焼結体をスパッタリング装置
の陰極又は陽極の一方を構成するターゲツト材として配
置し、対極に配設された基板上に酸化物超電導物質をス
パッタリングし、その後に熱処理するものである。Superconducting elements such as superconducting transistors and superconducting sensors are based on the formation of a superconducting thin film, and it is known that this thin film can be formed by a sputtering method using, for example, the oxide sintered body. . In this sputtering method, the oxide sintered body is placed as a target material constituting either a cathode or an anode of a sputtering device, and an oxide superconducting material is sputtered onto a substrate placed as a counter electrode, followed by heat treatment. It is something.
ところがこのスパッタリング法は、超電導薄膜の組成に
対応した組成の酸化物超電導焼結体を形成し、この焼結
体をターゲットとして基板」二にスバッタリングし、そ
の後に熱処理が必要となり、極めて煩雑な工程を必要と
する。However, this sputtering method requires forming an oxide superconducting sintered body with a composition corresponding to the composition of the superconducting thin film, sputtering the sintered body onto a substrate using this sintered body as a target, and then heat treatment, which is extremely complicated. requires a process.
そこで、基板上の膜形成後の熱処理を必要としない化学
的な気相成長法として例えばハロイド系気相成長法につ
いて、文献“Ｈｉｇｈ−Ｔｃ Ｂ１５ｒｃａｃｕｏｘ
ｏｎ ＭｇＯ５ｕｐｅｒｃｏｎｄｕｃｔｏｒ Ｇ
ｒｏｗｎ Ｂｙ Ｖ Ｐ Ｅ″ （Ｍ、Ｉｈａｒａ ｅ
ｔ ａＬ５ｔｈＩｎｔｅｒｎａｔｉｏｎａｌ Ｗｏｒｋ
ｓｈｏｐ ｏｎ Ｆｕｔｕｒｅ Ｅｊｅｔｒｏｎ Ｄｅ
ｖｉｃｅｓ、ｐｐ １３７〜１４１（１９８８））で提
案されている。Therefore, as a chemical vapor phase growth method that does not require heat treatment after film formation on a substrate, for example, halide vapor phase growth method is described in the document "High-Tc B15rcacuox".
on MgO5superconductor G
row By V P E'' (M, Ihara e
t aL5thInternational Work
shop on Future Ejetron De
Vices, pp 137-141 (1988)).
これは第２図に示すように、気相成長装置を用いるもの
で、石英ソースチャンバー１１内に、ソース材料である
Ｂ４Ｃ氾、、Ｃｕｌ、Ｃａ Ｉｔ及びＳｒ１．の固型材
料を配置すると共に石英ソースチャンバー１１を有する
石英反応管１２内にＭｇＯ基板１３を配置し、各ソース
材料及び基板１３を各ゾーン毎に加熱する抵抗加熱炉１
４を反応管１２の周囲に設けて構成される。抵抗加熱炉
１４の抵抗加熱線１５によりソース温度はＢ ｉＣｌ
ｓを２００℃、Ｃｕｒを５００℃、Ｃａ１．を８００℃
、ＳｒＩ、を８２５℃とし、基板１３の温度を８２５℃
として、ソースチャンバー１１にＨｅガスを流入するこ
とにより、各ソース材料からの蒸気を基板１３上に移行
させ、反応管１２に流入されるＨ ｅガスを混入した０
２ガスの雰囲気下で反応させて基板１３上に、Ｂ１−８
ｒ−Ｃａ−Ｃｕ−０系の高温起電導薄膜を形成するもの
である。この方法によれば、マルチターゲットスパッタ
リングや多元蒸着法等のような物理的成膜法に比べ、化
学的な結合力を利用するため、高品位なエピタキシャル
膜を、後の熱処理なしで成長できる。As shown in FIG. 2, this uses a vapor phase growth apparatus, and the source materials B4C, Cul, CaIt, and Sr1. A resistance heating furnace 1 in which an MgO substrate 13 is placed in a quartz reaction tube 12 having a quartz source chamber 11, and each source material and substrate 13 are heated in each zone.
4 around the reaction tube 12. The source temperature is set to B iCl by the resistance heating wire 15 of the resistance heating furnace 14.
s at 200°C, Cur at 500°C, Ca1. 800℃
, SrI, is set to 825°C, and the temperature of the substrate 13 is set to 825°C.
By flowing He gas into the source chamber 11, the vapor from each source material is transferred onto the substrate 13, and the He gas flowing into the reaction tube 12 is mixed.
B1-8 is formed on the substrate 13 by reacting in an atmosphere of 2 gases.
This is to form an r-Ca-Cu-0 based high temperature electromotive conductive thin film. According to this method, compared to physical film-forming methods such as multi-target sputtering and multi-dimensional vapor deposition, because it utilizes chemical bonding force, a high-quality epitaxial film can be grown without any subsequent heat treatment.
（ハ）発明が解決しようとする課題
従来の気相成長法においては、一般に単一キャリアガス
を使用し、熱平衡状態でソース材料を蒸発させるため、
単一組成の膜を形成するのには都合がよいが、膜の組成
を積層する厚みによって変化させるには、膜の組成を異
ならしめるために各ソース温度を抵抗加熱炉１４により
調整する必要があるが、熱平衡状態に至る時間が単一原
子層の成膜速度に比べて遅いため、膜の組成を積層する
厚みよって異ならしめることが困難である。(c) Problems to be Solved by the Invention In conventional vapor phase growth methods, a single carrier gas is generally used and the source material is evaporated in a state of thermal equilibrium.
This is convenient for forming a film of a single composition, but in order to vary the composition of the film depending on the thickness of the laminated layer, it is necessary to adjust the temperature of each source using the resistance heating furnace 14 in order to make the composition of the film different. However, since the time required to reach a thermal equilibrium state is slower than the deposition rate of a single atomic layer, it is difficult to vary the composition of the film depending on the thickness of the stacked layers.
本発明はかかる点に鑑み発明されたものにして、超電導
相化合物薄膜と非超電導相化合物薄膜を、膜の成長過程
において原子層、分子層レベルでエピタキシャル成長さ
せながら形成して、超電導素子を製造する方法を提供せ
んとするものである。The present invention was invented in view of the above points, and a superconducting element is manufactured by forming a superconducting phase compound thin film and a non-superconducting phase compound thin film while growing epitaxially at the atomic layer and molecular layer level during the film growth process. The purpose is to provide a method.
（ニ）課題を解決するための手段
かかる課題を解決するため、第１の本発明は、高温酸化
物超電導体組成の構成元素のハロゲン化物の固型材料と
基板を、キャリアガス中に配置すると共に前記固型材料
を加熱蒸発させ、加熱された基板上に前記超電導体組成
の化合物を析出させるものであって、基板上の超電導相
化合物と非超電導相化合物を、前記固型材料の加熱温度
及び基板温度を単一原子層の成膜速度より早く異ならし
めて層状に析出することを特徴とする。(d) Means for Solving the Problems In order to solve the problems, the first invention provides a method of disposing a solid material of a halide of a constituent element of a high-temperature oxide superconductor composition and a substrate in a carrier gas. At the same time, the solid material is heated and evaporated to precipitate the compound having the superconducting composition on the heated substrate, and the superconducting phase compound and the non-superconducting phase compound on the substrate are heated to evaporate at the heating temperature of the solid material. The film is characterized in that the substrate temperature is varied faster than the film formation rate of a single atomic layer, and the film is deposited in a layered manner.
第２の本発明は、第１の本発明において前記所定の固型
材料及び基板の温度を抵抗加熱と赤外線又は高周波加熱
とにより制御することを特徴とするものである。A second invention is characterized in that, in the first invention, the temperature of the predetermined solid material and the substrate is controlled by resistance heating and infrared or high frequency heating.
（ホ）作用
前記固型材料の加熱温度及び基板温度を、単一原子層の
成膜速度より早く異ならしめることにより、熱平衡状態
を抵抗加熱の制御により得るものより、早く得ることが
できる。従って、基板上の超電導相化合物膜と非超電導
相化合物膜とを層状に形成することができる。(e) Effect By varying the heating temperature of the solid material and the substrate temperature faster than the deposition rate of a single atomic layer, a thermal equilibrium state can be obtained faster than that achieved by controlling resistance heating. Therefore, the superconducting phase compound film and the non-superconducting phase compound film on the substrate can be formed in a layered manner.
前記加熱温度及び基板温度は、抵抗加熱と赤外線又は高
周波加熱により、単一原子層の成膜速度より早く異なる
ものとなる。The heating temperature and substrate temperature differ faster than the deposition rate of a single atomic layer due to resistance heating and infrared or high frequency heating.
（へ）実施例 本発明の一実施例を第１図に基いて説明する。(f) Example An embodiment of the present invention will be described based on FIG.
第１図は気相成長装置の概略図である。FIG. 1 is a schematic diagram of a vapor phase growth apparatus.
この図面において、気相成長装置は、石英反応管１、石
英ソースチャンバー２、横型５ゾーン抵抗加熱炉３、石
英ファイバー管４及びガスコントロールシステムから構
成されている。In this drawing, the vapor phase growth apparatus is composed of a quartz reaction tube 1, a quartz source chamber 2, a horizontal five-zone resistance heating furnace 3, a quartz fiber tube 4, and a gas control system.
石英ソースチャンバー２内には、高温酸化物超電導体組
成を構成する複数の元素のハロゲン化物の固型材料が各
ゾーンに分けて配置されている。Inside the quartz source chamber 2, solid materials of halides of a plurality of elements constituting the high-temperature oxide superconductor composition are arranged in zones.
この実施例では、Ｂ ｉ−８ｒ−Ｃａ−Ｃｕ系酸化物超
電導体組成の構成元素のハロゲン化物として、Ｂ ｉ
Ｃｊ！、、ＣｕＩ、Ｃａ Ｉ ２及びＳｒ Ｉｔの固型
材料を夫々ボートに載置して、各ゾーン毎に対応して配
置する。In this example, B i
Cj! , , CuI, Ca I 2 and Sr It are placed on a boat and arranged correspondingly to each zone.
石英反応管１内には、ソースチャンバー２の開口側に（
１，００）Ｍ ｇ Ｏ基板５をサセプタに載置して配置
する。Inside the quartz reaction tube 1, on the opening side of the source chamber 2 (
1,00) Place the M g O substrate 5 on a susceptor.
抵抗加熱炉３は、各ゾーンに対応した抵抗加熱線６が反
応管の周囲に配置され、ＣｕＩ及びＣｕＩ、の各固型材
料及び基板５に対応する抵抗加熱線６には夫々石英ファ
イバー管４が設けられている。抵抗加熱炉３による温度
は、Ｂ ＩＣｌ ＋が１８０℃、ＣｕＩが４５０℃、Ｃ
ａ１．が７００℃、Ｓ ｒ Ｉ ｔが８２５℃、基板５
が８００℃に設定されている。また、石英ファイバー管
４がら赤外線照射により、ＣｕＩは４５０℃から５００
℃に、Ｃａ １．は７００℃から８００℃に、基板５は
８００℃から８５０℃に加熱される。この際の温度変化
は赤外線を用いているため数秒以内と急峻である。In the resistance heating furnace 3, resistance heating wires 6 corresponding to each zone are arranged around the reaction tube, and quartz fiber tubes 4 are connected to the resistance heating wires 6 corresponding to the solid materials CuI and CuI and the substrate 5, respectively. is provided. The temperatures in the resistance heating furnace 3 are 180°C for B ICl +, 450°C for CuI, and 450°C for CuI.
a1. is 700°C, S r I t is 825°C, substrate 5
is set at 800°C. In addition, CuI was heated from 450°C to 500°C by infrared irradiation from the quartz fiber tube 4.
℃, Ca 1. is heated from 700°C to 800°C, and the substrate 5 is heated from 800°C to 850°C. Because infrared rays are used, the temperature change at this time is rapid and takes place within a few seconds.
抵抗加熱と赤外線加熱の状態で、ソースチャンバー２に
キャリアガスとして純度９９．９９％のＨｅガスをガス
コントロールシステムにより流量２で、７分を流す。ソ
ースチャンバー２内にはＯ，ガスを流さないので、各固
型材料からの蒸気は反応せず、基板５上に移行する。In the state of resistance heating and infrared heating, He gas with a purity of 99.99% is flowed as a carrier gas into the source chamber 2 at a flow rate of 2 for 7 minutes using a gas control system. Since O and gas are not flowed into the source chamber 2, the vapors from each solid material do not react and migrate onto the substrate 5.
反応管１には反応ガスとしての純度９９．９９％０゜ガ
スを０．１１７分と、ソースチャンバー２内との流速を
調整するための純度９９．９９％のＨｅガスを２２／分
とがガスコントロールシステムにより調整されて流入さ
れる。従って、基板５上で、各蒸気が反応してＢｉ＋５
ｒｔＣａｔＣｕｓＯｘ組成の膜が、成膜速度１０人／分
で形成される。この成膜速度は遅いが、その分結晶性、
平坦性に優れた膜が得られる。１００分成膜を行ない、
１０００人の超電導相化合物の膜を形成する。尚、この
膜の組成はＩＣＰ分析により求めた。また、この膜の抵
抗温度特性を測定したところ、臨界温度Ｔｃ（ｅｎｄ）
がｌｌ０Ｋであった。従って、Ｂｉ、Ｓｒ＋Ｃａ 、Ｃ
ｕ 、Ｏｘは酸化物超電導体であることがわかる。In the reaction tube 1, 0° gas with a purity of 99.99% as a reaction gas was supplied for 0.117 min, and He gas with a purity of 99.99% was supplied at 22 min to adjust the flow rate into the source chamber 2. The inflow is regulated by the gas control system. Therefore, on the substrate 5, each vapor reacts with Bi+5
A film having the composition rtCatCusOx is formed at a deposition rate of 10 people/min. Although this film formation rate is slow, the crystallinity and
A film with excellent flatness can be obtained. Perform film formation for 100 minutes,
Form a film of 1000 superconducting phase compounds. The composition of this film was determined by ICP analysis. In addition, when we measured the resistance temperature characteristics of this film, we found that the critical temperature Tc (end)
was ll0K. Therefore, Bi, Sr+Ca, C
It can be seen that u and Ox are oxide superconductors.
上記膜の形成に続いて、ＣｕＬＣａｌｚ及び基板５に対
する赤外線加熱を止めると、１分以内に各ゾーンの温度
は抵抗加熱のみによる初期設定した温度１８０℃−４５
０℃−７００’Ｃ−８２５’Ｃ−８００℃に急峻に戻る
。この熱平衡状態で１０分開成膜を行ったところ、約１
００人のＢ１゜Ｓ ｒ 、Ｃｕ 、Ｏｘ膜を得た。この
膜組成はＩＣＰ分析により求めた。また、この膜を液体
窒素（沸点７７Ｋ）に浸しても抵抗は零にはならず、常
電導相又は半導体相の非超電導相の化合物であることが
判別した。Following the formation of the above film, when infrared heating of CuLCalz and substrate 5 is stopped, the temperature of each zone decreases to the initially set temperature of 180°C - 45°C by resistance heating only within 1 minute.
Returns steeply to 0°C-700'C-825'C-800°C. When open film formation was performed for 10 minutes in this thermal equilibrium state, approximately 1
00 B1°S r , Cu, Ox films were obtained. The film composition was determined by ICP analysis. Furthermore, even when this film was immersed in liquid nitrogen (boiling point 77K), the resistance did not become zero, indicating that it was a compound in a non-superconducting phase of a normal conductive phase or a semiconductor phase.
以上の工程で基板５上に］１３＋１ｓｒｔｃａｔｃｕ＋
Ｏｘの超電導相化合物薄膜とＢ ｉ ！Ｓ ｒｔｃｕ＋
ＯＸの非超電導相化合物薄膜を、両者の基本格子が同
一であるため、急峻なエピタキシャル界面で層状に形成
することができる。]13+1srtcatcu+
Ox superconducting phase compound thin film and B i! S rtcu+
The non-superconducting phase compound thin film of OX can be formed in a layered manner with a steep epitaxial interface since both have the same basic lattice.
また、上記非超電導相化合物薄膜を形成した後、再び赤
外線照射により、ＣｕＩ、ＣａＩ２及び基板の温度を夫
々５００℃、８００℃及び８５０℃に戻すことにより、
前述と同様にＢ １ｔ Ｓ ｒ ｒＣａ ｘ Ｃｕ ｈ
Ｏｘの超電導相化合物薄膜を１０００人形成する。か
くして、超電導相化合物薄膜、／非超電導相比合物薄膜
／超電導相化合物薄膜を急峻なエピタキシャル界面で層
状に形成することができる。Further, after forming the non-superconducting phase compound thin film, by returning the temperatures of CuI, CaI2 and the substrate to 500°C, 800°C and 850°C, respectively, by infrared irradiation,
As before, B 1t S r rCa x Cu h
1000 people will form superconducting phase compound thin films of Ox. In this way, a superconducting phase compound thin film/non-superconducting phase compound thin film/superconducting phase compound thin film can be formed in a layered manner at a steep epitaxial interface.
以上の実施例においては。ハロゲン化物の固型材料の加
熱温度と基板温度を、単一原子層の成膜速度より早く異
ならしめる手段として、赤外線加熱を用いたが、この赤
外線加熱に代って高周波加熱を用いることができる。ま
た、実施例では、Ｂ１−５ｒ−Ｃａ−Ｃｕ系酸化物超電
導体組成のものを用いたが、他の系たとえばＹｂ−Ｂａ
−Ｃｕ系、Ｔｌ−Ｂａ−Ｃａ−Ｃｕ系酸化物超電導体組
成にも適用できる。In the above embodiments. Infrared heating was used as a means to make the heating temperature of the solid halide material different from the substrate temperature faster than the deposition rate of a single atomic layer, but high-frequency heating can be used instead of this infrared heating. . In addition, in the examples, a B1-5r-Ca-Cu based oxide superconductor composition was used, but other systems such as Yb-Ba
It is also applicable to -Cu-based and Tl-Ba-Ca-Cu based oxide superconductor compositions.
（ト）効果
本発明は、高温酸化物超電導体組成の構成元素のハロゲ
ン化物の固型材料温度と基板温度を、単一原子層の成膜
速度より早く異ならしめて、超電導相化合物と非超電導
相化合物を層状に形成するから、固化合物薄膜をエピタ
キシャル状態で単結晶性を保持した状態で順次積層する
ことができ、超電導素子を製造することができる。(g) Effect The present invention makes the solid material temperature of the halide and the substrate temperature of the constituent elements of the high-temperature oxide superconductor composition different faster than the film formation rate of a single atomic layer, thereby forming a superconducting phase compound and a non-superconducting phase compound. Since the compound is formed in a layered manner, solid compound thin films can be sequentially laminated while maintaining single crystallinity in an epitaxial state, and a superconducting element can be manufactured.
また、上記温度を変化させるに際して、赤外線又は高周
波加熱を用いると、熱平衡状態に達するまでの応答速度
が数１０ミリ秒台まで高速化が可能で、この速度は単一
原子層の成膜速度に比べて十分に早く、単一原子層、分
子層での組成の制御を十分な精度で行うことができる。Furthermore, when changing the temperature, if infrared or high-frequency heating is used, the response speed to reach a thermal equilibrium state can be increased to several tens of milliseconds, and this speed is comparable to the deposition rate of a single atomic layer. In comparison, it is sufficiently fast and the composition of a single atomic layer or molecular layer can be controlled with sufficient precision.
第１図は本発明に用いる気相成長装置の概略図、第２図
は従来例で用いる気相成長装置の概略図である。FIG. 1 is a schematic diagram of a vapor phase growth apparatus used in the present invention, and FIG. 2 is a schematic diagram of a vapor phase growth apparatus used in a conventional example.
Claims (2)
物の固型材料と基板を、キャリアガス中に配置すると共
に前記固型材料を加熱蒸発させ、加熱された基板上に前
記超電導体組成の化合物を析出させるものであって、基
板上の超電導相化合物と非超電導相化合物を、前記固型
材料の加熱温度及び基板温度を単一原子層の成膜速度よ
り早く異ならしめて層状に析出形成することを特徴とす
る超電導素子の製造方法。(1) A solid material of a halide as a constituent element of a high-temperature oxide superconductor composition and a substrate are placed in a carrier gas, and the solid material is heated and evaporated, and the superconductor composition is placed on the heated substrate. A method for precipitating a compound, in which a superconducting phase compound and a non-superconducting phase compound on a substrate are precipitated and formed in a layered manner by varying the heating temperature of the solid material and the substrate temperature faster than the deposition rate of a single atomic layer. A method for manufacturing a superconducting element characterized by the following.
と赤外線又は高周波加熱とにより制御することを特徴と
する請求項（１）記載の超電導素子の製造方法。(2) The method for manufacturing a superconducting element according to claim (1), wherein the temperature of the predetermined solid material and the substrate is controlled by resistance heating and infrared or high frequency heating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1089101A JP2828652B2 (en) | 1989-04-07 | 1989-04-07 | Superconducting element manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1089101A JP2828652B2 (en) | 1989-04-07 | 1989-04-07 | Superconducting element manufacturing method |
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| Publication Number | Publication Date |
|---|---|
| JPH02267106A true JPH02267106A (en) | 1990-10-31 |
| JP2828652B2 JP2828652B2 (en) | 1998-11-25 |
Family
ID=13961499
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
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| Country | Link |
|---|---|
| JP (1) | JP2828652B2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0248404A (en) * | 1988-08-10 | 1990-02-19 | Fujitsu Ltd | Method for forming superconducting thin film and apparatus therefor |
-
1989
- 1989-04-07 JP JP1089101A patent/JP2828652B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0248404A (en) * | 1988-08-10 | 1990-02-19 | Fujitsu Ltd | Method for forming superconducting thin film and apparatus therefor |
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| Publication number | Publication date |
|---|---|
| JP2828652B2 (en) | 1998-11-25 |
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