JPH02267193A - Method for synthesizing diamond by combustion flame method and gas burner for synthesis - Google Patents
Method for synthesizing diamond by combustion flame method and gas burner for synthesisInfo
- Publication number
- JPH02267193A JPH02267193A JP8802189A JP8802189A JPH02267193A JP H02267193 A JPH02267193 A JP H02267193A JP 8802189 A JP8802189 A JP 8802189A JP 8802189 A JP8802189 A JP 8802189A JP H02267193 A JPH02267193 A JP H02267193A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- combustion flame
- flame
- combustion
- inert gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 63
- 238000002485 combustion reaction Methods 0.000 title claims abstract description 60
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 33
- 230000002194 synthesizing effect Effects 0.000 title claims abstract description 9
- 230000015572 biosynthetic process Effects 0.000 title claims description 12
- 238000003786 synthesis reaction Methods 0.000 title claims description 11
- 239000007789 gas Substances 0.000 claims abstract description 42
- 239000011261 inert gas Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000001301 oxygen Substances 0.000 claims abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 15
- 150000001875 compounds Chemical class 0.000 claims abstract description 10
- 239000002994 raw material Substances 0.000 claims abstract description 10
- 238000001556 precipitation Methods 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000000265 homogenisation Methods 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000002244 precipitate Substances 0.000 description 6
- 238000001308 synthesis method Methods 0.000 description 6
- -1 etc. Substances 0.000 description 5
- 238000001069 Raman spectroscopy Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000010891 electric arc Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000007664 blowing Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical group CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 229910001315 Tool steel Inorganic materials 0.000 description 2
- LNSPFAOULBTYBI-UHFFFAOYSA-N [O].C#C Chemical compound [O].C#C LNSPFAOULBTYBI-UHFFFAOYSA-N 0.000 description 2
- 238000009841 combustion method Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 229910000997 High-speed steel Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 206010061218 Inflammation Diseases 0.000 description 1
- 229910009043 WC-Co Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 150000001723 carbon free-radicals Chemical class 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 150000002170 ethers Chemical group 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000004054 inflammatory process Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 125000000468 ketone group Chemical group 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野)
本発明は耐摩耗性、耐蝕性、高熱伝導性、高電気絶縁性
、広域光学的透明等の優れた特性を有し、研摩材、研削
材、超硬工具材、光学材用部材等に有用な膜状のダイヤ
モンドの気相法による燃焼炎法合成方法及び同合成方法
の実施に好適なガスバーナーに関する。[Detailed Description of the Invention] <Industrial Application Fields> The present invention has excellent properties such as abrasion resistance, corrosion resistance, high thermal conductivity, high electrical insulation, and wide-area optical transparency, and is suitable for use as an abrasive and grinding material. The present invention relates to a method for synthesizing film-like diamond using a gas phase combustion flame method, which is useful for materials, carbide tool materials, members for optical materials, etc., and a gas burner suitable for carrying out the synthesis method.
〈従来の技術〉
ダイヤモンドの合成法としては、超高圧高温条件下での
、鉄、ニッケル系等の触媒による合成法や爆薬法による
黒鉛の直接変換法が従来より実施されている。<Prior Art> Conventionally, methods for synthesizing diamond include a synthesis method using an iron, nickel-based catalyst, etc. under ultra-high pressure and high temperature conditions, and a direct conversion method of graphite using an explosive method.
近年低圧+1.VD法として、炭化水素又は窒素、酸素
等を含む有機化合物と水素との混合ガスを熱フィラメン
ト、マイクロ波プラズマ、高周波プラズマ、直流放電プ
ラズマ、直流アーク放電等により励起状態としてダイヤ
モンドを合成する方法が開発されている。In recent years, low pressure +1. The VD method is a method of synthesizing diamond by excitation of a mixed gas of hydrocarbon or organic compound containing nitrogen, oxygen, etc., and hydrogen using a hot filament, microwave plasma, high frequency plasma, DC discharge plasma, DC arc discharge, etc. being developed.
さらに最近、本件出願人は燃焼炎中の非酸化性領域での
ダイヤモンドの合成法を開発し、特願昭63−7175
8号として出願しており、本件発明はこの方法を更に発
展させた方法とそれを実現するための燃焼炎生成用ガス
バーナーに関する。More recently, the applicant has developed a method for synthesizing diamond in the non-oxidizing region of combustion flame,
No. 8, and the present invention relates to a method that further develops this method and a gas burner for generating a combustion flame to realize the method.
〈発明が解決しようとする課題〉
特願昭63−71758号の発明は、従来法に比べ、簡
易な手段で、しかも大面積の膜状ダイヤモンドをも生成
しつる気相合成法であって、その要点は炭素を含むダイ
ヤモンド析出用原料化合物を不完全燃焼領域を有するよ
うに燃焼させ、該不完全燃焼領域中、又は該領域の近傍
の非酸化性雰囲気中に、ダイヤモンド析出用基材を設置
し、基材温度をダイヤモンド析出温度に保持することに
より基材にダイヤモンドを析出させる方法である。<Problems to be solved by the invention> The invention of Japanese Patent Application No. 1983-71758 is a vapor phase synthesis method that is simpler than conventional methods and can also produce a large area of diamond film. The key point is to burn a carbon-containing raw material compound for diamond precipitation so that it has an incomplete combustion region, and to place a substrate for diamond precipitation in a non-oxidizing atmosphere in or near the incomplete combustion region. In this method, diamond is deposited on the base material by maintaining the base material temperature at the diamond precipitation temperature.
この方法は炭素を含む原料化合物により燃焼炎を形成さ
せるのみで基材上にダイヤモンドを析出させることが可
能であり、従来のCVD法に比べ画期的に優れた方法で
あるが実用化のためにはダイヤモンド析出面積の更なる
増大や析出物の均質性制御が強く望まれている。This method allows diamond to be deposited on a substrate simply by forming a combustion flame using a raw material compound containing carbon, and is a revolutionary method compared to the conventional CVD method, but it is difficult to put it into practical use. There is a strong desire to further increase the diamond precipitate area and control the homogeneity of the precipitates.
本件発明はダイヤモンドの析出面積増大及び均質化の向
上促進を目的とする。The present invention aims to increase the area of diamond precipitation and promote homogenization.
く課題を解決するための手段〉
本発明者らは低圧CVD法に関し、特に励起手段につい
て種々検討を重ねた結果、熱フィラメントでは熱プラズ
マ、マイクロ波ではマイクロ波プラズマ、直流アーク放
電ではアク放電プラズマなど、すべてプラズマ状態がダ
イヤモンド合成に大きく関与しているとの結論を得、こ
れにより燃焼による燃焼炎もプラズマ状態であることに
より、この燃焼炎を利用すれば従来法に比し容易にダイ
ヤモンドを合成しつると判断し、特願昭63−7175
8号として出願した。Means for Solving the Problems> The present inventors have conducted various studies regarding the low-pressure CVD method, particularly regarding excitation means, and have found that thermal plasma is used for hot filaments, microwave plasma is used for microwaves, and arc discharge plasma is used for direct current arc discharge. It was concluded that the plasma state is greatly involved in diamond synthesis in all cases, and since the combustion flame caused by combustion is also in the plasma state, it is easier to synthesize diamonds by using this combustion flame than with conventional methods. It was determined that it could be synthesized, and a patent application was filed in 1983-7175.
I applied as No. 8.
更にダイヤモンド析出領域の拡大、析出ダイヤモンドの
均質化を目的として研究の結果、燃焼炎外炎部外側に不
活性ガスを流通させることにより、目的を達しつる事を
見出し本発明を完成させた。Furthermore, as a result of research aimed at expanding the diamond precipitation area and homogenizing the precipitated diamond, the present invention was completed by discovering that the objectives could be achieved by circulating an inert gas outside the outer flame section of the combustion flame.
即ち本発明はダイヤモンド析出用原料化合物に酸素を添
加し、不完全燃焼領域が存在するように燃焼炎を形成し
、該不完全燃焼領域中、又は該領域の近傍の非酸化性雰
囲気中に、ダイヤモンド析出用基材を設置し、基材温度
をダイヤモンド析出温度に保持することにより基材にダ
イヤモンドを合成するに際し、燃焼炎周囲に不活性ガス
流を形成し、酸素の拡散を減少させダイヤモンド析出領
域の増大を行なう事を特徴とする気相法ダイヤモンドの
合成法、同方法に使用するための燃焼炎生成用ガス吹き
出し口が、周囲を包囲されるように不活性ガス吹き出し
管が、二重に配置されている燃焼炎法ダイヤモンド合成
用ガスバーナー及び燃焼炎生成用ガス吹き出し口周囲に
、多数の不活性ガス吹き出し管が配置されている燃焼炎
法ダイヤモンド合成用ガスバーナーに関する。That is, the present invention adds oxygen to a raw material compound for diamond precipitation, forms a combustion flame so that an incomplete combustion region exists, and in a non-oxidizing atmosphere in or near the incomplete combustion region, By installing a base material for diamond precipitation and maintaining the temperature of the base material at the diamond precipitation temperature, an inert gas flow is formed around the combustion flame to reduce the diffusion of oxygen and cause diamond precipitation. A method for synthesizing diamond using a vapor phase method, which is characterized by increasing the area, and an inert gas blowing pipe is double-layered so that the combustion flame generating gas blowing port used in the method is surrounded. The present invention relates to a gas burner for combustion flame diamond synthesis, which is arranged in a combustion flame method, and a gas burner for combustion flame diamond synthesis, in which a large number of inert gas blow-off pipes are arranged around a combustion flame generation gas blow-off port.
尚本発明の方法により合成されるダイヤモンドにはダイ
ヤモンド様炭素を含む。Note that the diamond synthesized by the method of the present invention contains diamond-like carbon.
先ずダイヤモンド合成用原料ガスについて説明する。First, the raw material gas for diamond synthesis will be explained.
炭素源として次に示す各種の化合物が使用できる。Various compounds shown below can be used as carbon sources.
メタン、エタン、プロパン、ブタン等の飽和炭化水素、
エチレン、プロピレン、ブチレン、アセチレン等の不飽
和炭化水素、ベンゼン、スチレン等の芳香族炭化水素、
エチルアルコール等のアルコール類、アセトン等のケト
ン基を含む化合物、ジエチルエーテル等のエーテル類、
その他アルデヒド化合物、含窒素化合物、−酸化炭素等
すべてが使用可能である。又、前述の化合物は1種又は
2種以上を混合して用いることができる。Saturated hydrocarbons such as methane, ethane, propane, butane,
Unsaturated hydrocarbons such as ethylene, propylene, butylene and acetylene; aromatic hydrocarbons such as benzene and styrene;
Alcohols such as ethyl alcohol, compounds containing ketone groups such as acetone, ethers such as diethyl ether,
Other aldehyde compounds, nitrogen-containing compounds, -carbon oxide, etc. can all be used. Further, the above-mentioned compounds can be used alone or in combination of two or more.
これらの炭素源化合物に必要により酸素更に非酸化性ガ
スとしてN2、Ar、 N2、C01C02、N20等
のガスを混合し、燃焼させる。These carbon source compounds are mixed with oxygen and non-oxidizing gases such as N2, Ar, N2, C01C02, N20, etc., if necessary, and burned.
更に炭素源として固体の炭素、黒鉛等を前記化合物と水
素、酸素の混合ガスの燃焼炎中て、気化、燃焼、水素化
等の反応を介して炭素源として用いる事も可能である。Furthermore, it is also possible to use solid carbon, graphite, etc. as a carbon source through reactions such as vaporization, combustion, and hydrogenation in a combustion flame of a mixed gas of the compound, hydrogen, and oxygen.
本発明においては前記のダイヤモンド合成用原料ガスを
不完全燃焼領域が存在するように燃焼させて燃焼炎を形
成させ、該不完全燃焼領域中又は炎外の非酸化性でかつ
炎の近傍のダイヤモンド析出可能に励起された領域に、
ダイヤモンド析出成長面を常に存在させる事が必要であ
る。In the present invention, the raw material gas for diamond synthesis is combusted so that an incomplete combustion region exists to form a combustion flame, and non-oxidizing diamonds in the incomplete combustion region or outside the flame and in the vicinity of the flame are used. In the region excited to be able to precipitate,
It is necessary to always have a diamond precipitation growth surface.
次に前記燃焼炎法ダイヤモンドの合成方法を実施するた
めの本発明のガスバーナー及び同ガスバーナーを用いて
の本発明の燃焼法について図面により説明する。尚バー
ナー自身は公知の構造であり、ガス吹き出し口に特徴が
あるので、その部分のみ図示する。Next, the gas burner of the present invention for carrying out the combustion flame diamond synthesis method and the combustion method of the present invention using the gas burner will be explained with reference to the drawings. The burner itself has a well-known structure, and since the gas outlet is unique, only that part is illustrated.
第1図、第2図は本発明の代表的なガスバーナーを用い
て、本発明の燃焼炎を形成している説明図、第3図は従
来のガスバーナを用いて従来法により燃焼炎を形成して
いる説明図、第4図、第5図は夫々、第1図のA−’A
線、第2図のB −B mの断面図を示す。Figures 1 and 2 are explanatory diagrams showing how the combustion flame of the present invention is formed using a typical gas burner of the present invention, and Figure 3 is an explanatory diagram showing how a combustion flame of the present invention is formed using a conventional gas burner using a conventional method. The explanatory diagrams, Figures 4 and 5, are A-'A of Figure 1, respectively.
2 shows a cross-sectional view taken along line B-Bm in FIG.
図において、1,1′はガス吹き出し口、2は環状不活
性ガスノズル、3,3゛は燃焼炎の内炎、4.4′は同
外炎、5は吹き出し口周囲に複数個配置された不活性ガ
ス吹き出し管を示す。In the figure, 1 and 1' are gas outlets, 2 is an annular inert gas nozzle, 3 and 3' are the inner flame of the combustion flame, 4 and 4' are the outer flames, and 5 are multiple units arranged around the outlet. Shows an inert gas outlet pipe.
尚第1図に示す環状不活性ガスノズル2はスリットであ
る事が好ましい。更に第1図のガスバーナーは図面より
明らかなように燃焼炎生成用ガス吹き出し口が周囲を包
囲されるように不活性ガス吹き出し管が二重に配置され
ている。The annular inert gas nozzle 2 shown in FIG. 1 is preferably a slit. Furthermore, as is clear from the drawing, the gas burner shown in FIG. 1 has double inert gas blow-off pipes so that the combustion flame-generating gas blow-off port is surrounded.
第3図に示すように通常燃焼炎は長く伸びた外炎4′中
に短い円節3′が存在する。この場合は不活性ガスの流
通はない。As shown in FIG. 3, a normal combustion flame has a short circular segment 3' within an elongated outer flame 4'. In this case, there is no inert gas flow.
本発明を示す第1図、第2図においては、不活性ガスノ
ズル2、不活性ガス吹き出し管5には、例えばアルゴン
が矢印方向に流通している。このため内炎3は長さが著
しく増大し、更にその太さも増大している。一方外炎4
は不活性ガスにより、ガス吹き出し口に近い部分では消
失し、内炎の頂点に近い部分より図に示す如く形成され
ている。尚第1図、第2図に示す内炎、外炎の形状は一
例であって燃焼炎の形成条件、不活性ガスの種類、流量
等によりその形状が決定される。本発明の燃焼炎法合成
法において、従来の燃焼法と同様、その基板は内炎内に
少なくともその一部が存在するように設置することが必
要である。In FIGS. 1 and 2 showing the present invention, for example, argon is flowing through the inert gas nozzle 2 and the inert gas blowing pipe 5 in the direction of the arrow. For this reason, the length of the inner flame 3 has increased significantly, and its thickness has also increased. On the other hand, external inflammation 4
Due to the inert gas, it disappears near the gas outlet, and is formed near the top of the inner flame as shown in the figure. The shapes of the inner flame and outer flame shown in FIGS. 1 and 2 are merely examples, and the shapes are determined by the combustion flame formation conditions, the type of inert gas, the flow rate, etc. In the combustion flame synthesis method of the present invention, as in the conventional combustion method, it is necessary to place the substrate so that at least a portion thereof exists within the inner flame.
ダイヤモンド析出用基材は通常低圧CVD法で用いられ
るものが使用できる。即ちs1ウェハー、SiC焼結体
、SiC粒状物の外にW、WC,Mo、 TiC、Ti
N 、サーメット、超硬合金工具鋼、合金工具鋼、高速
度鋼等の形状物及び粒状物を例示できる。As the base material for diamond precipitation, those commonly used in low pressure CVD methods can be used. That is, in addition to the s1 wafer, SiC sintered body, and SiC granules, W, WC, Mo, TiC, and Ti
Examples include shaped objects and granular objects such as N, cermet, cemented carbide tool steel, alloy tool steel, and high-speed steel.
ダイヤモンドが析出する領域は燃焼炎中の通常内炎と称
される酸素不足の領域である。The region where diamonds are deposited is an oxygen-deficient region of the combustion flame, commonly referred to as the inner flame.
−数的に酸素過剰領域は高熱で例えばダイヤモンドが形
成されても、過剰の酸素によりco、 co□となり消
失する。即ち、ダイヤモンド析出領域は酸素不足であり
比較的低温である。そしてこの領域においては原料ガス
より炭化水素ラジカルや炭素ラジカル(活性種)の生成
の条件に励起することが必要である。- Numerically, even if a diamond is formed under high heat in an oxygen-excessive region, the excess oxygen turns into co and co□ and disappears. That is, the diamond precipitation region is oxygen deficient and relatively low temperature. In this region, it is necessary to excite the raw material gas to conditions that produce hydrocarbon radicals and carbon radicals (active species).
本発明方法において炎の温度は300〜3000℃、ダ
イヤモンド析出用基材の温度は300°C〜1400℃
の範囲におくことが好ましい。In the method of the present invention, the temperature of the flame is 300 to 3000°C, and the temperature of the substrate for diamond precipitation is 300°C to 1400°C.
It is preferable to keep it within the range of .
そしてこの状態では励起が不充分の場合、補助加熱源と
して、通電加熱による発熱体、高周波誘導加熱、レーザ
ー光による加熱方式、赤外線加熱、アーク放電による加
熱等が用いられる。If the excitation is insufficient in this state, a heating element using electrical heating, high-frequency induction heating, a heating method using laser light, infrared heating, heating using arc discharge, or the like is used as an auxiliary heating source.
具体的には加熱領域温度は800°C以上、望ましくは
1000°C以上、基材温度は300°C以上1400
℃以上に保持すれば良い。Specifically, the heating area temperature is 800°C or higher, preferably 1000°C or higher, and the base material temperature is 300°C or higher.
Just keep it above ℃.
〈実 施 例〉 次に実施例、比較例により本発明を説明する。<Example> Next, the present invention will be explained with reference to Examples and Comparative Examples.
実施例
アセチレン酸素バーナーガス吹き出し口(外径12mm
φ)の外周に内径14mmφの銅管を固定し、バーナー
吹き出し管と外周鋼管との間に不活性ガスを流せるよう
にした第1図に示す本発明のガスバーナーを製造した。Example Acetylene oxygen burner gas outlet (outer diameter 12 mm
A gas burner of the present invention as shown in FIG. 1 was manufactured by fixing a copper tube with an inner diameter of 14 mmφ to the outer circumference of the cylinder φ) so that an inert gas could flow between the burner blow-off tube and the outer peripheral steel tube.
このバーナーにダイヤモンド合成原料であるアセチレン
及び酸素をそれぞれ50p/分、4517分(酸素アセ
チレン流量比090)の流量で供給し、且つ鋼管とガス
吹き出し口の間にアルゴンを5N/分の流量で、合成用
原料ガスと並行に供給した。Acetylene and oxygen, which are raw materials for diamond synthesis, are supplied to this burner at a flow rate of 50 p/min and 4517 min (oxygen acetylene flow rate ratio 090), respectively, and argon is supplied between the steel pipe and the gas outlet at a flow rate of 5 N/min. It was supplied in parallel with the raw material gas for synthesis.
基板として20mmX 20mmx 3 mmの超硬バ
イトWC−Go焼結チップを、燃焼炎に垂直に、ガス吹
き出し口より7mmの距離に設置した。30分間燃焼し
た後、冷却し、光学顕微鏡により基板上のダイヤモンド
析出状況を観察した。基板全体にダイヤモンド自形を持
つ膜状析出物が見られ、中心より15mmφまでは結晶
子径10〜15LLm、それより外周部では基板全面に
わたり6〜12μm程度で、基板エツジの付まはりも良
好であった。As a substrate, a 20 mm x 20 mm x 3 mm carbide bit WC-Go sintered chip was placed perpendicular to the combustion flame and at a distance of 7 mm from the gas outlet. After burning for 30 minutes, it was cooled and the state of diamond precipitation on the substrate was observed using an optical microscope. A film-like precipitate with a diamond shape is observed over the entire substrate, and the crystallite diameter is 10 to 15 LLm from the center to 15 mmφ, and at the outer periphery, it is about 6 to 12 μm over the entire surface of the substrate, and the edges of the substrate are well attached. Met.
析出膜の顕微鏡ラマン分光によりラマンシフト1333
cm−’のダイヤモンドビーク1本と、1550cm−
’付近に非常にブロードな低いピークを認められた。以
上により析出物はダイヤモンドであることが確認された
。又、膜厚は約40μmであった。Raman shift of 1333 by microscopic Raman spectroscopy of the deposited film
One diamond beak of cm-' and 1550cm-
A very broad low peak was observed near '. From the above, it was confirmed that the precipitate was diamond. Further, the film thickness was about 40 μm.
比較例 j
実施例のArガス流量を0とした以外全ての条件を同一
として30分間燃焼を行ない析出物を同様に観察した。Comparative Example j Combustion was performed for 30 minutes under the same conditions as in Example except that the Ar gas flow rate was set to 0, and the precipitates were observed in the same manner.
その結果、基板表面には中心より12mmφにわたり8
〜14LLm程度の結晶子からなる自形を含んだ膜状の
ダイヤモンドが析出した。然し外周部ではダイヤモンド
の析出は見られなかった。又ラマン分光も実施例1と同
様であった。膜厚は約251tmであった。As a result, there are 8
A film-like diamond including euhedral shapes consisting of crystallites of about 14 LLm was precipitated. However, no diamond precipitation was observed at the outer periphery. Further, Raman spectroscopy was also the same as in Example 1. The film thickness was approximately 251 tm.
即ちダイヤモンドの析出は実施例より少なかった。That is, the amount of diamond precipitated was smaller than in the example.
比較例 2
内径30cmφ、高さ35cm、内容積25リツトルの
反応容器内に、外径12mmφのアセヂレン酸素バーナ
ー及び該バーナーにより形成される燃焼炎に対して直交
するように、且つバナー口より7mmの間隔を設けて2
0mmX 20mmX3mmの超硬バイトWC−Co焼
結チップを設置した。Comparative Example 2 In a reaction vessel with an inner diameter of 30 cmφ, a height of 35 cm, and an internal volume of 25 liters, an acetylene-oxygen burner with an outer diameter of 12 mmφ was placed, and an acetylene-oxygen burner with an outer diameter of 12 mmφ was placed, and an acetylene-oxygen burner with an outer diameter of 7 mm was placed perpendicular to the combustion flame formed by the burner and 7 mm from the banner opening. 2 at intervals
A carbide cutting tool WC-Co sintered tip measuring 0 mm x 20 mm x 3 mm was installed.
反応容器内を減圧した後、反応容器内にアルゴンガスな
流入し、圧力を730torrに調整した。After reducing the pressure inside the reaction vessel, argon gas was introduced into the reaction vessel and the pressure was adjusted to 730 torr.
次いで実施例1と同様にバーナーにアセチレン、酸素を
供給し、30分間燃焼させた。燃焼停止後、反応容器内
を空気に置換した。Next, acetylene and oxygen were supplied to the burner in the same manner as in Example 1, and the mixture was burned for 30 minutes. After the combustion stopped, the inside of the reaction vessel was replaced with air.
基板上の析出物を光学顕微鏡で観察した。The precipitates on the substrate were observed using an optical microscope.
基板中心部に17mmφにわたり8〜1.5+、Lmの
自形を持つダイヤモンド結晶子が析出し、その周囲には
3〜9μmのダイヤモンド結晶子が析出していた。Diamond crystallites having an euhedral shape of 8 to 1.5+ and Lm were precipitated at the center of the substrate over a diameter of 17 mm, and diamond crystallites of 3 to 9 μm were precipitated around the diamond crystallites.
又、膜厚は約32μmであり、膜質はラマン分光測定に
より実施例1と同様であることを確認した。Further, the film thickness was approximately 32 μm, and the film quality was confirmed to be the same as in Example 1 by Raman spectroscopy.
即ち実施例1に比しダイヤモンドの析出は少ない。That is, compared to Example 1, there was less diamond precipitation.
〈発明の効果〉
本発明の燃焼炎法により、従来の燃焼炎法に比し、均質
性の優れた大面積のダイヤモンド結晶を容易に析出しつ
る。特に本発明のガスバーナーは小型で、コンパクトで
あるので、このガスバーナーを用いるダイヤモンド合成
装置も、コンパクトとなり、移動も容易である。<Effects of the Invention> The combustion flame method of the present invention makes it easier to precipitate large-area diamond crystals with excellent homogeneity compared to conventional combustion flame methods. In particular, since the gas burner of the present invention is small and compact, a diamond synthesis apparatus using this gas burner is also compact and easy to move.
又、本発明の燃焼炎法に於いて本発明のガスバーナーを
移動しつSダイヤモンドを析出させれば、バーナーを固
定した合成法に比し、長尺又は大面積基材に対するダイ
ヤモンド析出が容易である。Furthermore, in the combustion flame method of the present invention, if S diamond is deposited while moving the gas burner of the present invention, it is easier to deposit diamond on a long or large-area substrate compared to a synthesis method in which the burner is fixed. It is.
第1図、第2図は本発明の代表的な例であるガスバーナ
ーを用いて本発明方法により燃焼炎を形成している説明
図、第3図は従来の方法により燃焼炎を形成している説
明図、第4図、第5図は夫々第1図、第2図のA−A線
、B−B線の断面図である。
図中、1,1′はガス吹き出し口、2は環状不活性ガス
ノズル、3.3′は燃焼炎の内炎、4.4′は同外炎、
5は吹き出し口周囲に複数個配置された不活性ガス吹き
出し管を示す。Figures 1 and 2 are explanatory diagrams showing how a combustion flame is formed by the method of the present invention using a gas burner, which is a typical example of the present invention, and Figure 3 is an illustration showing how a combustion flame is formed by a conventional method. The explanatory drawings, FIGS. 4 and 5, are cross-sectional views taken along the line AA and line B-B in FIGS. 1 and 2, respectively. In the figure, 1 and 1' are the gas outlet, 2 is the annular inert gas nozzle, 3.3' is the inner flame of the combustion flame, 4.4' is the outer flame,
Reference numeral 5 indicates a plurality of inert gas blow-off pipes arranged around the blow-off port.
Claims (3)
不完全燃焼域が存在する様に燃焼炎を形成し、 該不完全燃焼領域中、又は該領域の近傍の非酸化性雰囲
気中に、ダイヤモンド析出用基材を設置し、基材温度を
ダイヤモンド析出温度に保持することにより、基材上に
ダイヤモンドを合成するに際し、燃焼炎周囲に不活性ガ
ス流を配置することを特徴とする燃焼炎法ダイヤモンド
の合成方法。(1) Adding oxygen to the raw material compound for diamond precipitation,
A combustion flame is formed so that an incomplete combustion zone exists, a substrate for diamond precipitation is placed in a non-oxidizing atmosphere in or near the incomplete combustion zone, and the temperature of the substrate is adjusted to the temperature required for diamond precipitation. 1. A method for synthesizing diamond using a combustion flame method, which comprises arranging an inert gas flow around a combustion flame when synthesizing diamond on a substrate by maintaining the temperature.
ように不活性ガス吹き出し管が二重に配置されている燃
焼炎法ダイヤモンド合成用ガスバーナー。(2) A gas burner for combustion flame diamond synthesis, in which inert gas blow-off pipes are arranged in duplicate so that the combustion flame-generating gas blow-off port is surrounded.
性ガス吹き出し管が配置されている燃焼炎法ダイヤモン
ド合成用ガスバーナー。(3) A gas burner for combustion flame diamond synthesis, in which a large number of inert gas blow-off pipes are arranged around the gas blow-off port for combustion flame generation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8802189A JPH02267193A (en) | 1989-04-10 | 1989-04-10 | Method for synthesizing diamond by combustion flame method and gas burner for synthesis |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8802189A JPH02267193A (en) | 1989-04-10 | 1989-04-10 | Method for synthesizing diamond by combustion flame method and gas burner for synthesis |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02267193A true JPH02267193A (en) | 1990-10-31 |
Family
ID=13931180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8802189A Pending JPH02267193A (en) | 1989-04-10 | 1989-04-10 | Method for synthesizing diamond by combustion flame method and gas burner for synthesis |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02267193A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5215788A (en) * | 1990-07-06 | 1993-06-01 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Combustion flame method for forming diamond films |
| JP2009227552A (en) * | 2008-03-25 | 2009-10-08 | Akita Univ | Diamond membrane synthetic method by combustion flame method using high purity acetylene gas |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02196094A (en) * | 1989-01-23 | 1990-08-02 | Nippon Steel Corp | Method for synthesizing diamond by combustion flame |
-
1989
- 1989-04-10 JP JP8802189A patent/JPH02267193A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02196094A (en) * | 1989-01-23 | 1990-08-02 | Nippon Steel Corp | Method for synthesizing diamond by combustion flame |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5215788A (en) * | 1990-07-06 | 1993-06-01 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Combustion flame method for forming diamond films |
| JP2009227552A (en) * | 2008-03-25 | 2009-10-08 | Akita Univ | Diamond membrane synthetic method by combustion flame method using high purity acetylene gas |
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