JPH02270834A - Halogenated polynuclear phenol compound, production thereof and positive type resist composition using same compound - Google Patents
Halogenated polynuclear phenol compound, production thereof and positive type resist composition using same compoundInfo
- Publication number
- JPH02270834A JPH02270834A JP1092247A JP9224789A JPH02270834A JP H02270834 A JPH02270834 A JP H02270834A JP 1092247 A JP1092247 A JP 1092247A JP 9224789 A JP9224789 A JP 9224789A JP H02270834 A JPH02270834 A JP H02270834A
- Authority
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- Japan
- Prior art keywords
- compound
- hydroxyphenyl
- formula
- radiation
- dioxane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/52—Improvements relating to the production of bulk chemicals using catalysts, e.g. selective catalysts
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- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、ポジ型レジスト用の感放射線性成分の原料と
して用いられる化合物およびその製法、更にはその化合
物のエステル体を用いてなるポジ型レジスト用組成物に
関するものである。[Detailed Description of the Invention] <Industrial Application Field> The present invention relates to a compound used as a raw material for a radiation-sensitive component for a positive resist, a method for producing the same, and a positive resist using an ester form of the compound. The present invention relates to a resist composition.
〈従来の技術〉
従来よりポジ型レジスト用の感放射線性成分として、フ
ェノール化合物とキノンジアジド化合物との縮合物が用
いられている。このフェノール化合物としては、トリヒ
ドロキシベンゾフェノン、テトラヒドロキシベンゾフェ
ノン等が用いられている。<Prior Art> Conventionally, a condensate of a phenol compound and a quinonediazide compound has been used as a radiation-sensitive component for positive resists. As this phenol compound, trihydroxybenzophenone, tetrahydroxybenzophenone, etc. are used.
〈発明が解決しようとする課題〉
しかしながら、これらベンゾフェノン系化合物から合成
した感放射線性成分を含むレジストは、解像力、パター
ン形状(プロファイル)に難があった。<Problems to be Solved by the Invention> However, resists containing radiation-sensitive components synthesized from these benzophenone compounds have problems in resolution and pattern shape (profile).
本発明の目的は、これらの性能が向上したレジストを作
ることができるフェノール化合物を提供するところにあ
る。この目的のため鋭意検討の結果、本発明品である化
合物を開発した。An object of the present invention is to provide a phenolic compound with which resists with improved performance can be made. For this purpose, as a result of intensive studies, we developed a compound that is the product of the present invention.
〈課題を解決するための手段〉
本発明は、下記式(r)で表わされる化合物、2−(4
−ヒドロキシフェニル)−2−(2,4−ジヒドロキシ
−5−クロロフェニル)−プロパン及び2−(4−ヒド
ロキシフェニル’)−2−(2゜4−ジヒドロキシ−5
−ブロモフェニル)−プロパンを提供するものである。<Means for Solving the Problems> The present invention provides a compound represented by the following formula (r), 2-(4
-hydroxyphenyl)-2-(2,4-dihydroxy-5-chlorophenyl)-propane and 2-(4-hydroxyphenyl')-2-(2°4-dihydroxy-5
-bromophenyl)-propane.
(ただし、式中XはCI又はBrを表わす。)本化合物
は4−クロロレゾルシン又は4−ブロモレゾルシンと2
−(4−ヒドロキシフェニル)−プロペンを反応させる
ことにより合成することができる。(However, in the formula, X represents CI or Br.) This compound combines 4-chlororesorcin or 4-bromoresorcin and 2
It can be synthesized by reacting -(4-hydroxyphenyl)-propene.
この反応で用いられる溶媒には、触媒との組合せにより
、ジオキサン、酢酸、ニトロベンゼン、モノクロロベン
ゼン、水等も可能であるがジオキサンが好ましい。触媒
には、溶媒との組合せにより、塩化アルミニウム、三フ
ッ化ホウ素の各種錯体、塩化第二スエ斐化亜鉛、硫酸等
も可能であるが、塩化アルミニウムが好ましい。The solvent used in this reaction may include dioxane, acetic acid, nitrobenzene, monochlorobenzene, water, etc. depending on the combination with the catalyst, but dioxane is preferred. Depending on the combination with the solvent, the catalyst may include aluminum chloride, various complexes of boron trifluoride, sulfuric acid chloride, zinc chloride, sulfuric acid, etc., but aluminum chloride is preferred.
溶媒緻は、重量比で原料の2〜5倍が適当である。Suitably, the concentration of the solvent is 2 to 5 times that of the raw material in terms of weight ratio.
ジオキサン溶媒、塩化アルミニウム触媒で反応させる場
合、反応温度は融媒の量に応じて50°Cからジオキサ
ンの沸点まで選ぶことができるが、60〜80℃が好ま
しい。When reacting with a dioxane solvent and an aluminum chloride catalyst, the reaction temperature can be selected from 50°C to the boiling point of dioxane depending on the amount of the melting medium, but 60 to 80°C is preferable.
反応モル比は、2−(4−ヒドロキシフェニル)−プロ
ペン1モルに対して4−クロロレゾルシン又は、4−ブ
ロモレゾルシンは1.2以上、塩化アルミニウムは0.
05〜2.0まで可能であるが、それぞれ2.5〜4.
0.0.8〜0.6が好ましい。The reaction molar ratio is 1.2 or more for 4-chlororesorcin or 4-bromoresorcin and 0.2 for aluminum chloride to 1 mole of 2-(4-hydroxyphenyl)-propene.
05 to 2.0 is possible, but 2.5 to 4.0, respectively.
0.0.8 to 0.6 is preferred.
本発明の化合物はキノンジアジド化合物と縮合反応させ
て、ポジ型レジスト用の感放射線性成分として用いられ
る。The compound of the present invention is subjected to a condensation reaction with a quinonediazide compound and used as a radiation-sensitive component for positive resists.
ポジ型レジスト用の感放射線性成分の合成法は、公知の
方法、すなわち、式(1)の構造をもつ2−ヒドロキシ
フェニル−2−ジヒドロキシフェニル−プロパンとキノ
ンジアジド化合物(例えば、ナフトキノン−(1,2)
−ジアジド−(2) −5−スルホン酸クロリド)とを
ジオキサン等を溶媒として、塩基性触媒例えばトリエチ
ルアミンを滴下することにより縮合させ、その後イオン
交換水にチャージして、結晶を析出させ、濾過、乾燥を
経て、該感放射線性成分を得ることができる。The radiation-sensitive component for positive resists can be synthesized using a known method, that is, 2-hydroxyphenyl-2-dihydroxyphenyl-propane having the structure of formula (1) and a quinonediazide compound (for example, naphthoquinone-(1, 2)
-Diazide- (2) -5-sulfonic acid chloride) is condensed using dioxane or the like as a solvent by dropping a basic catalyst such as triethylamine, and then charged to ion-exchanged water to precipitate crystals, filtered, After drying, the radiation-sensitive component can be obtained.
感放射線性成分の合成に用いるキノンジアジド化合物と
しては、ナフトキノン−(1,2)−ジアジド−(2)
−5−スルホン酸クロリド、ナフトキノン−(1,2)
−ジアジド−(2)−4−スルホン酸クロリド、ベンゾ
キノン−(1,2)−ジアジド−(21−4−スルホン
酸クロリドが挙げられる。The quinonediazide compound used for the synthesis of the radiation-sensitive component is naphthoquinone-(1,2)-diazide-(2).
-5-sulfonic acid chloride, naphthoquinone-(1,2)
Examples include -diazide-(2)-4-sulfonic acid chloride and benzoquinone-(1,2)-diazide-(21-4-sulfonic acid chloride).
〈発明の効果〉
本発明の化合物とキノンジアジド化合物の縮合反応によ
って得られた化合物はポジ型レジストの感放射線性成分
として用いられ、この感放射線性成分を含有するポジ型
レジストはすぐれた解像力、パターン形状(プロファイ
ル)を示す。<Effects of the Invention> The compound obtained by the condensation reaction of the compound of the present invention and a quinonediazide compound is used as a radiation-sensitive component of a positive resist, and a positive resist containing this radiation-sensitive component has excellent resolution and pattern. Indicates the shape (profile).
〈実施例〉
次に実施例をあげて、本発明をさらに具体的に説明する
が本発明はこれらの実施例によって何ら限定されるもの
ではない。<Examples> Next, the present invention will be described in more detail with reference to Examples, but the present invention is not limited by these Examples.
実施例1
ジオキサン40ノに塩化アルミニウム1.545’を加
え、攪拌下60〜65℃に昇温し均一溶液にした。ここ
に4−クロロレゾルシン10ノを加え、2−(4−ヒド
ロキシフェニル)−プロペン8,092をジオキサン1
2りに溶かした溶液を1時間かけて滴下し、さらに0.
7時間攪拌した。反応中、温度は60±8℃に保った。Example 1 1.545' of aluminum chloride was added to 40 g of dioxane, and the temperature was raised to 60 to 65°C while stirring to form a homogeneous solution. To this, 10 parts of 4-chlororesorcin was added, and 8,092 parts of 2-(4-hydroxyphenyl)-propene was added to 1 part of dioxane.
A solution of 0.2 and 0.0% was added dropwise over 1 hour.
Stirred for 7 hours. During the reaction, the temperature was kept at 60±8°C.
反応終了後、室温まで冷却し、クロロホルム2207を
加え、攪拌し、不溶物をP別後、P液に水600ノを加
えて抽出を行った。クロロホルム層を6009の水で洗
浄後、濃縮すると結晶が析出した。これを濾過して得ら
れた結晶は、60℃で乾燥後1.849であり、これが
下式(]0の構造をもつ化合物であることを°HNMR
スペクトル、マススペクトル、IRスペクトルおよび融
点によリ、確認した。After the reaction was completed, the mixture was cooled to room temperature, 220 g of chloroform was added, stirred, and insoluble materials were removed from the P solution, followed by extraction by adding 600 g of water to the P solution. The chloroform layer was washed with 6009 water and concentrated to precipitate crystals. The crystal obtained by filtration had a molecular weight of 1.849 after drying at 60°C, and °HNMR confirmed that it was a compound having the structure of the following formula (]0.
Confirmed by spectrum, mass spectrum, IR spectrum and melting point.
’HNMRスペクトル(溶媒:アセトンd6.TMS)
化学シフト値
δ(ppm) : 1.5B (s、 6H) 、6
.45 (S、 IH)、6.69 (d、 2H)
、7.05 (d、 2H) 、7.20(S、 LH
) 、7.66 (S、 IH) 、8.01 (8,
IH)8.82 (s、IH)
マススペクトル
m/e 278 (M )
IRスペクトル
シー8000〜8600個 (OH)融点 196
〜198°C
実施例2
ジオキサン40yに塩化アルミニウム1.17 Fを加
え、攪拌下60〜65℃に昇温し均一溶液にした。ここ
に4−ブロモレゾルシン107を加え、2−(4−ヒド
ロキシフェニル)−プロペン2,877をジオキサン1
07に溶かした溶液を1時間かけて滴下し、さらに0.
5時間攪拌した。反応中、温度は60±8℃に保った。'HNMR spectrum (solvent: acetone d6.TMS)
Chemical shift value δ (ppm): 1.5B (s, 6H), 6
.. 45 (S, IH), 6.69 (d, 2H)
, 7.05 (d, 2H) , 7.20 (S, LH
), 7.66 (S, IH), 8.01 (8,
IH) 8.82 (s, IH) Mass spectrum m/e 278 (M) IR spectrum sea 8000-8600 (OH) Melting point 196
~198°C Example 2 1.17 F of aluminum chloride was added to 40y of dioxane, and the temperature was raised to 60 to 65°C with stirring to form a homogeneous solution. Add 107 of 4-bromoresorcin to this, and add 2,877 of 2-(4-hydroxyphenyl)-propene to 1 of dioxane.
A solution dissolved in 0.07 was added dropwise over 1 hour, and then a solution of 0.07 was added dropwise over 1 hour.
Stirred for 5 hours. During the reaction, the temperature was kept at 60±8°C.
反応終了後、室温まで冷却し、クロロホルム22(lを
加え攪拌し、不溶物を炉別後、fP液に水60(lを加
えて抽出を行った。クロロホルム層を6002の水で洗
浄後、濃縮すると結晶が析出した。これを濾過して得ら
れた結晶は、60℃で乾燥後0.929であり、これが
下式(Ill)の構造をもつ化合物であることを°HN
MRスペクトル、マススペクトル、IRスペクトルおよ
び融点により確認した。After the reaction was completed, the mixture was cooled to room temperature, 22 (l) of chloroform was added, stirred, and the insoluble materials were separated in a furnace. 60 (l) of water was added to the fP solution for extraction. After washing the chloroform layer with 6,002 l of water, Upon concentration, crystals were precipitated. The crystals obtained by filtration had a molecular weight of 0.929 after drying at 60°C, indicating that this was a compound having the structure of the following formula (Ill).
Confirmed by MR spectrum, mass spectrum, IR spectrum and melting point.
”HNMRスペクトル(溶媒:アセトンds、 TMS
)化学シフト値
δ(ppm) : 1.6B (s、 6H) 、6.
46 (s、 tH)、6.69 (a、2H) 、7
.04 (d、2H)、7.35 (S、18)、7.
69 (s、LH) 、8.00 (s、LH) 、8
.37 (s、IH)マススペクトル
m/e 822 (M )
IRスペクトル
= 1
シー3000〜3600cm (OH)融点 10
6〜107°C
合成例1
内容積soomtの三ツロフラスコに、実施例1で得ら
れた化合物を7432、ナフトキノン−(1,2)−ジ
アジド−(2)−5−スルホン酸グロに浸して、反応温
度を20〜25℃にコントロールし、トリエチルアミン
5.869を滴下ロートを用いて30分間で滴下させた
。そののち、反応温度を20〜25℃に保ちながら4時
間攪拌を続けた。反応後、イオン交換水にチャージした
のち、濾過、乾燥させることによって、感放射線性成分
Aを得た。"HNMR spectrum (solvent: acetone ds, TMS
) Chemical shift value δ (ppm): 1.6B (s, 6H), 6.
46 (s, tH), 6.69 (a, 2H), 7
.. 04 (d, 2H), 7.35 (S, 18), 7.
69 (s, LH), 8.00 (s, LH), 8
.. 37 (s, IH) Mass spectrum m/e 822 (M) IR spectrum = 1 Sea 3000-3600 cm (OH) Melting point 10
6 to 107°C Synthesis Example 1 In a three-tube flask with an internal volume of soomt, the compound obtained in Example 1 was immersed in 7432, naphthoquinone-(1,2)-diazide-(2)-5-sulfonic acid, The reaction temperature was controlled at 20 to 25°C, and 5.869 g of triethylamine was added dropwise over 30 minutes using a dropping funnel. Thereafter, stirring was continued for 4 hours while maintaining the reaction temperature at 20 to 25°C. After the reaction, the mixture was charged into ion-exchanged water, filtered, and dried to obtain radiation-sensitive component A.
合成例2
式(I[Jで表わされる化合物のかわりに、式(II)
で表わされる化合物を用いた以外は合成例1と同様にし
て感放射線性成分を得た。得られた感放射線性成分をB
とする。Synthesis Example 2 Instead of the compound represented by formula (I[J, formula (II)
A radiation-sensitive component was obtained in the same manner as in Synthesis Example 1 except that the compound represented by was used. The obtained radiation-sensitive component is
shall be.
合成例8
式(If)で表される化合物のかわりに2.8.4−ト
リヒドロキシベンゾフェノンを用いた以外は合成例1と
同様にして感放射線性成分を得た。得られた感放射線性
成分をCとする。Synthesis Example 8 A radiation-sensitive component was obtained in the same manner as in Synthesis Example 1, except that 2.8.4-trihydroxybenzophenone was used instead of the compound represented by formula (If). The obtained radiation-sensitive component is designated as C.
合成例4
式(Il)で表される化合物のかわりに、2.8.4゜
4−テトラヒドロキシベンゾフェノンをナフトキノン−
(1,2)−ジアジド−(2)−5−スルホン酸クロリ
ドとのモル比が1対8となるように用いた以外は合成例
1と同様にして感放射線性成分を得た。得られた感放射
線性成分をDとする。Synthesis Example 4 Instead of the compound represented by formula (Il), 2.8.4°4-tetrahydroxybenzophenone was replaced with naphthoquinone-
A radiation-sensitive component was obtained in the same manner as in Synthesis Example 1, except that the molar ratio with (1,2)-diazide-(2)-5-sulfonic acid chloride was 1:8. The obtained radiation-sensitive component is designated as D.
次に感放射線性成分A、Bを成分にもつレジストと感放
射線性成分C,Dを成分にもつレジストとの性能をr値
、解像度について比較した。Next, the performance of a resist having radiation-sensitive components A and B as its components and a resist having radiation-sensitive components C and D as its components was compared in terms of r value and resolution.
実施例8.4及び比較例1卑2
合成例1.2,8.4で得られた感放射線性成分A、B
、C,Dをノボラック樹脂とともに、表1に示す組成で
、エチルセロソルブアセテート48部に溶かし、レジス
ト液を調合した。調合したレジスト液は0.2pmのテ
フロン製フィルターで濾過することによりレジスト液を
調整した。これを常法によって洗浄したシリコンウェハ
ーに回転塗布機を用いて1.8P厚に塗布した。ついで
このシリコンウェハーを100℃のホットプレートで6
0秒間ベークした。ついでこのウェハーに486 nm
(2線)の露光波長を有する縮小投影露光機(GCA社
DSW4800NA−0,42)を用いて露光量を段階
的に変化させて露光した。これを住友化学製現像液5O
PDで1分間現像することにより、ポジ型パターンを得
た。Example 8.4 and Comparative Example 1 Base 2 Radiation-sensitive components A and B obtained in Synthesis Examples 1.2 and 8.4
, C, and D together with a novolac resin were dissolved in 48 parts of ethyl cellosolve acetate with the composition shown in Table 1 to prepare a resist solution. The prepared resist solution was filtered through a 0.2 pm Teflon filter to prepare a resist solution. This was coated to a thickness of 1.8 P on a silicon wafer cleaned by a conventional method using a spin coater. Next, this silicon wafer was heated on a hot plate at 100℃ for 6
Bake for 0 seconds. Then this wafer was exposed to 486 nm.
Exposure was carried out using a reduction projection exposure machine (GCA DSW4800NA-0,42) having a (2-line) exposure wavelength and changing the exposure amount stepwise. Add this to Sumitomo Chemical developer 5O
A positive pattern was obtained by developing with PD for 1 minute.
ついで露光量の対数に対する、規格化膜厚(−残膜厚/
初期膜厚)をプロットし、その傾きθを求めtanθを
r値とした。Next, the normalized film thickness (-residual film thickness/
The initial film thickness) was plotted, and its slope θ was determined, and tan θ was taken as the r value.
同時に求めた解像度とともに結果を表1に示す。The results are shown in Table 1 along with the resolution obtained at the same time.
表 −1
峯ノボラック樹脂
メタクレゾール/パラクレゾール−778クレゾール/
ホルマリン−1/ 0.8のモル比で、シュウ酸触媒を
用いた還流下に反応させることにより得られた重電平均
分子量9800 (ポリスチレン換算)のノボラック樹
脂Table-1 Mine novolac resin metacresol/paracresol-778 cresol/
A novolac resin with a heavy charge average molecular weight of 9800 (polystyrene equivalent) obtained by reaction under reflux using an oxalic acid catalyst at a molar ratio of formalin-1/0.8.
第1図は実施例1の2−(4−ヒドロキシフェニル)−
2−(2,4−ジヒドロキシ−5−クロロフェニル)−
プロパンの’HNMRスペクトルである。
第2図は実施例1の2−(4−ヒドロキシフェニル)−
2−(2,4−ジヒドロキシ−5−クロロフェニル)−
プロパンのIRスペクトルである。
第8図は実施例2の2−(4−ヒドロキシフェニル)−
2−(2,4−ジヒドロキシ−5−ブロモフェニル)−
プロパンの’HNMRスペクトルである。
第4図は実施例2の2−(4−ヒドロキシフェニル)−
2−(2,4−ジヒドロキシ−5−ブロモフェニル)−
プロパンのIRスペクトルでアル。
(以下余白)
(1B完)Figure 1 shows 2-(4-hydroxyphenyl)- of Example 1.
2-(2,4-dihydroxy-5-chlorophenyl)-
This is a 'HNMR spectrum of propane. Figure 2 shows 2-(4-hydroxyphenyl)- of Example 1.
2-(2,4-dihydroxy-5-chlorophenyl)-
This is an IR spectrum of propane. Figure 8 shows 2-(4-hydroxyphenyl)- of Example 2.
2-(2,4-dihydroxy-5-bromophenyl)-
This is a 'HNMR spectrum of propane. Figure 4 shows 2-(4-hydroxyphenyl)- of Example 2.
2-(2,4-dihydroxy-5-bromophenyl)-
Al in the IR spectrum of propane. (Left below) (1B complete)
Claims (1)
ル化合物。 ▲数式、化学式、表等があります▼( I ) 〔ただし式中Xは、Cl又はBrを表わす。〕(2)酸
触媒存在下で、4−クロロレゾルシン又は4−ブロモレ
ゾルシンと2−(4−ヒドロキシフェニル)−プロペン
を反応させる事を特徴とする請求項1の化合物の製造方
法。 (3)請求項1の化合物のキノンジアジドスルホン酸エ
ステルを含むことを特徴とするポジ型レジスト組成物。[Claims] (1) A halogenated polynuclear phenol compound represented by formula (I). ▲There are mathematical formulas, chemical formulas, tables, etc.▼(I) [However, in the formula, X represents Cl or Br. (2) The method for producing the compound according to claim 1, which comprises reacting 4-chlororesorcin or 4-bromoresorcin and 2-(4-hydroxyphenyl)-propene in the presence of an acid catalyst. (3) A positive resist composition comprising a quinonediazide sulfonic acid ester of the compound according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1092247A JP2775831B2 (en) | 1989-04-11 | 1989-04-11 | Positive resist composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1092247A JP2775831B2 (en) | 1989-04-11 | 1989-04-11 | Positive resist composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02270834A true JPH02270834A (en) | 1990-11-05 |
| JP2775831B2 JP2775831B2 (en) | 1998-07-16 |
Family
ID=14049097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1092247A Expired - Lifetime JP2775831B2 (en) | 1989-04-11 | 1989-04-11 | Positive resist composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2775831B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS615037A (en) * | 1984-06-18 | 1986-01-10 | Sumitomo Chem Co Ltd | Production of aralkyl monosubstituted polyhydric phenolic compound |
| JPH01113333A (en) * | 1987-09-24 | 1989-05-02 | Korea Advanced Inst Of Sci Technol | Production of 3-(4'-bromobiphenyl-4-yl) tetralin-1-one |
-
1989
- 1989-04-11 JP JP1092247A patent/JP2775831B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS615037A (en) * | 1984-06-18 | 1986-01-10 | Sumitomo Chem Co Ltd | Production of aralkyl monosubstituted polyhydric phenolic compound |
| JPH01113333A (en) * | 1987-09-24 | 1989-05-02 | Korea Advanced Inst Of Sci Technol | Production of 3-(4'-bromobiphenyl-4-yl) tetralin-1-one |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2775831B2 (en) | 1998-07-16 |
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