JPH02275413A - Manufacture of matrix type display device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] This invention relates to a method of manufacturing a matrix type display device, particularly a thin one
]111-Relates to a method of manufacturing a transistor array substrate.

[Prior Art] A conventional matrix display device generally has a plurality of gate electrode wirings and a plurality of source electrode wirings intersecting on a substrate, and a switching element is installed at the intersection of each gate electrode wiring and source electrode wiring. It is configured with the following. FIG. 3 shows an example of this, in which b1 to b are gate electrode wirings, 31 to a5 are source electrode wirings, and c1.
c2. . . . is a switching element connected to the intersection of each electrode wiring. A liquid crystal display device is constructed by configuring this on at least one substrate and sandwiching a display material such as liquid crystal between the two substrates and a counter substrate having a transparent electrode.

At least one iJ film transistor (hereinafter abbreviated as TPT) is used as the switching element C1, C2,...
When using an active element with nonlinear characteristics such as
A TFT array substrate consisting of transparent display electrodes connected to the drain electrodes of PT and TPT, and the above-mentioned wiring is likely to cause dielectric breakdown due to static electricity.

For this reason, in the past, as a countermeasure against element destruction due to static electricity, each electrode wiring was kept at the same potential by short-circuiting between each electrode wiring11, so that even if the TFT array substrate was exposed to static electricity, it would not be affected. A structure was adopted.

FIG. 2 shows an example of the structure of a TFT array substrate showing a conventional method of short-circuiting gate electrode wiring and source electrode wiring as disclosed in, for example, Japanese Patent Laid-Open No. 58-116573. In the figure, a1 to a6 are source electrode wiring, bI
Nb5 is the gate electrode wiring, and Cl+ C2,...
* is a switching element provided at the intersection of each electrode wiring. Here, the source ai wiring ma to a6 are all short-circuited at the terminal portions as shown in A and D in the figure, and the gate electrode wiring b.

-b are short-circuited by B and C in the figure at all terminal portions. Furthermore, between the shorted terminals, as shown by the wavy lines in the diagram, E is connected between A and 8, F is connected between A and B, and B is connected between A and 6.
When connecting -D with H and C-D with G, all electrode wiring becomes short-circuited, so even if the TFT array substrate is exposed to static electricity, the potential inside the TFT array substrate is the same everywhere. Therefore, switching element C++C
2-... will not be destroyed by static electricity.

[Problems to be Solved by the Invention] In the conventional matrix display device, the above-mentioned method is effective in protecting switching elements, etc. against static electricity during relatively low voltage or easy-to-remove processes such as handling of substrates. However, during the LCD assembly process, high-voltage static electricity of several thousand volts or more is sometimes generated, such as in the rubbing process that allows the liquid crystal to align by rubbing the surface of the liquid crystal alignment film with a rubbing cloth. In the process, even when short-circuit wires are installed, when the rubbing cloth, which is an insulating material, and the board wiring terminals with exposed metal surfaces are close to each other, high voltage and short voltage duration pulses are applied between them. Corona discharge is likely to occur, and if such a discharge surge is applied to wiring terminals, etc., even if short-circuit wiring is used to short-circuit each electrode wiring, it may cause deterioration of the element characteristics of the display switching element or short-circuit between electrode wiring, etc. There were problems such as the tendency for static electricity damage to occur.

This invention was made to solve the above-mentioned problems, and by making it difficult for pulse corona discharge or discharge surge to be applied to the wiring terminals etc. during the rubbing process, switching in the display screen can be improved. The purpose of this invention is to increase the thickness of a matrix type display device manufacturing method that can avoid electrostatic damage to elements and the like.

[Means for Solving the Problems] A method for manufacturing a matrix display device according to the present invention includes a method for manufacturing a matrix display device according to the present invention.
Each terminal portion of the gate electrical wiring and the SOS electrical wiring on the T-array substrate is covered with an insulating film and subjected to a rubbing process.

"Operation" In this invention, by covering the metal part of the matrix distribution with an insulating film and performing a rubbing treatment, the static electricity generated by the friction between the rubbing cloth and the TFT array substrate can be removed from the matrix wiring and rubbed. Prevents discharge between cloths,
Prevent deterioration of switching elements.

[Embodiment 1] Hereinafter, a method for manufacturing a matrix type display device according to an embodiment of the present invention will be explained with reference to the drawings.

FIG. 1 is a diagram showing an example of the configuration of a TFT array substrate of a matrix type display device according to an embodiment of the present invention.
a1 to a5 are source electrode wirings, b, to b3 are gate electrode wirings, CI, C2, I... are switching elements such as TPT provided at the intersections of each electrode wiring, d,...
d2. ... is a terminal for connection with an external drive circuit, ri1)
(2) is a transparent insulating substrate such as glass, (2) is a rubbing cloth for liquid crystal alignment treatment, and (3) is a film with an insulation ratio of 1°.Next, the manufacturing method thereof will be explained.

The TFT array substrate is a transparent insulating substrate such as glass (1)
First, Cr or the like is formed on the surface using a sputtering method or the like, and a gate heavy interconnection is formed using a photolithography method or the like. Next, as a gate insulating film, 5i3Nn etc. is deposited by P-CVD.
Subsequently, a semiconductor film such as a S+ is formed, and a gate insulating film and a semiconductor layer are formed into a desired shape using a photolithography method. A source electrode wiring and a drain electrode are formed using a first lithography method or the like. Next, a film of indium tin oxide (ITo) or the like is formed using a sputtering method or the like, and a transparent display electrode is formed using a photolithography method or the like. and finally 5
A TFT array substrate is manufactured by forming a film of ixN4 or the like using a P-CVD method or the like.

Note that this Si3N4 film is formed as a substrate protective film over the entire surface of the substrate except for terminal portions of the gate electrode wiring and the source electrode wiring for connection to external circuits. Next, a liquid crystal alignment film such as polyimide is formed on the entire display area of the TFT array substrate, and a rubbing process (217) is performed to align the liquid crystal. By covering the terminals for connection with the circuit with an insulating film, such as polyimide tape, to eliminate the exposure of the metal surface of each electrode wiring terminal, and performing the rubbing process, the rubbing cloth and the outside during the rubbing process can be It is possible to reduce corona discharge and the application of high pulse voltage to each electrode wiring between the terminals for connection with the circuit, and T
Electrostatic failures such as destruction of switching elements on the FT array substrate and short circuits between gate and source wiring are prevented.

[Effects of the Invention] As described above, according to the present invention, the terminal portions of the gate electrode wiring and the source electrode wiring that connect to the external circuit,
Since the rubbing process is performed by covering the TFT array substrate with an insulating film, it is possible to easily prevent a large drop in yield due to electrostatic damage to the TFT array substrate, and there is an effect of reducing manufacturing dirt and improving reliability.

[Brief explanation of drawings]

FIG. 1 is an explanatory diagram illustrating the configuration of a TFT array substrate according to an embodiment of the present invention, and FIGS. 2 and 3 are configuration diagrams showing a conventional 71-lix type display device. In the figure, (1) is a transparent insulating substrate, (2) is a rubbing cloth, <3) is an insulating film, a1 to a are source electrode wirings, b, to b3 are gate I electrode wirings, cl, c2...
are switching elements, d, d2. . . . is a terminal for connection with an external circuit. In addition, in the figures, the same reference numerals refer to the same or corresponding parts.

Claims (1)

[Claims] A plurality of gate electrode wirings and a plurality of source electrode wirings intersecting with these gate electrode wirings are formed on a transparent insulating substrate, and an active element having nonlinear characteristics is connected to the intersection of the gate electrode wirings and the source electrode wirings. Then, a rubbing process is performed on a thin film transistor array substrate configured by connecting a transparent electrode to the drain electrode of the active element,
In a matrix display device manufactured by interposing a display material between this thin film transistor array substrate and a counter substrate on which a transparent electrode is formed, the rubbing process is performed to remove the gate electrode wiring and the source electrode wiring. ,
1. A method for manufacturing a matrix display device, characterized in that a terminal portion connected to an external circuit is covered with an insulating film and subjected to a rubbing treatment.