JPH02275659A - Resin mold type semiconductor device - Google Patents
Resin mold type semiconductor deviceInfo
- Publication number
- JPH02275659A JPH02275659A JP1097978A JP9797889A JPH02275659A JP H02275659 A JPH02275659 A JP H02275659A JP 1097978 A JP1097978 A JP 1097978A JP 9797889 A JP9797889 A JP 9797889A JP H02275659 A JPH02275659 A JP H02275659A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- semiconductor device
- lead
- resin
- molded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は樹脂モールド型半導体装置に関し、特に表面が
Ｃｕを主体とする素材からなるリードフレームを使用し
た樹脂モールド型半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a resin molded semiconductor device, and more particularly to a resin molded semiconductor device using a lead frame whose surface is made of a material mainly composed of Cu.
従来、この種の樹脂モールド型半導体装置は、Ｃｕ又は
Ｃｕ合金からなるリードフレームを使用し、半導体素子
をへｇペースト等を用いてリードフレームにマウントし
た後、へｇペーストをキュア（一般に１５０℃、２時間
）し、半導体素子をリードフレームに固着する。Conventionally, this type of resin molded semiconductor device uses a lead frame made of Cu or Cu alloy, and after mounting the semiconductor element on the lead frame using Heg paste, etc., the Heg paste is cured (generally at 150°C). , 2 hours), and the semiconductor element is fixed to the lead frame.
その後、半導体素子の電極とリードフレームの内部リー
ドとを、Ａｕワイヤ等によりボンディング接続（一般に
１５０〜３５０℃）する、更に、この半導体素子を保護
し、且つ外部導出リードを固定するために、樹脂モール
ド（一般に１５０〜１７５℃）を行う。After that, the electrodes of the semiconductor element and the internal leads of the lead frame are connected by bonding (generally at 150 to 350°C) using Au wires, etc. Furthermore, in order to protect the semiconductor element and fix the external leads, a resin is applied. Mold (generally at 150-175°C) is carried out.
こうして組立てられた半導体装置は、組立工程（Ａｇペ
ーストキュア工程、ワイヤボンディング工程、樹脂モー
ルド工程）中の加熱により、外部導出リードは酸化され
ている。そのため、一般に外部に導出したリード部には
、電解半田めっき法又はデイツプ法によって半田めっき
を施し、半導体装置が取り付けられる外部装置との電気
的接続の際に用いられる半田等の濡れ性を改善した構造
を有している。In the semiconductor device thus assembled, the external leads are oxidized by heating during the assembly process (Ag paste curing process, wire bonding process, resin molding process). For this reason, the leads exposed to the outside are generally solder-plated using electrolytic solder plating or dipping to improve the wettability of the solder used to electrically connect the semiconductor device to an external device. It has a structure.
そして、半田めっきを施した後、不要リードフレーム部
を切断加工し、外部導出リードを成形加工して半導体装
置は完成する。又、リードフレームはワイヤボンディン
グ性を良くするために、内部リードのワイヤ接続部に部
分Ａｇめっきを施したものが一般に使用されている。After applying solder plating, unnecessary lead frame parts are cut and external leads are formed to complete the semiconductor device. Further, in order to improve wire bonding properties, a lead frame in which the wire connection portion of the internal lead is partially plated with Ag is generally used.
〔発明が解決し７ようとする課題〕
上述した従来の樹脂モールド型半導体装置は、樹脂モー
ルド後、外装めっきを施すために組立工程が複雑となり
、コスト高となっていた。[Problems to be Solved by the Invention] The above-described conventional resin-molded semiconductor device has a complicated assembly process because exterior plating is applied after resin molding, resulting in high costs.
更に、電解半田めっき法では、通常、半田めっき液及び
その前処理工程での処理液に強酸溶液が使用され、半導
体装置はその強酸溶液中に長時間浸漬（１５〜３０分）
される。Furthermore, in the electrolytic solder plating method, a strong acid solution is usually used as the solder plating solution and the treatment solution in the pretreatment process, and the semiconductor device is immersed in the strong acid solution for a long time (15 to 30 minutes).
be done.
そのため、リードフレームとモールド樹脂との微小隙間
に強酸溶液が侵入し、樹脂モールド境界のリードフレー
ムに内部腐食が生じ易くなり、更に、侵入イオンの除去
が困難となって残留イオンによる半導体装置の使用条件
下における電解腐食が生じ易くなり、電気的オーブン不
良が発生するという欠点を有していた。As a result, a strong acid solution enters into the minute gap between the lead frame and the mold resin, making it easy for internal corrosion to occur in the lead frame at the boundary of the resin mold.Furthermore, it becomes difficult to remove the invading ions, and the semiconductor device cannot be used due to residual ions. This method has the disadvantage that electrolytic corrosion tends to occur under these conditions, resulting in electrical oven failure.
又、デイツプ法による半田めっきでは、半田めっき時の
温度が高い（２５０〜２８０°Ｃ）ために、半田デイツ
プ時の熱ストレスにより、リードフレームとモールド樹
脂との界面の隙間が大きくなり、プレッシャークツカー
テストなどの結果、耐湿性が原因で電気的絶縁性の劣化
が生じ易いといった欠点を有していた。In addition, in solder plating using the dip method, the temperature during solder plating is high (250 to 280°C), so the gap at the interface between the lead frame and mold resin becomes large due to thermal stress during solder dip, resulting in pressure cracks. As a result of car tests, etc., it was found that it had the disadvantage of being susceptible to deterioration of electrical insulation due to its moisture resistance.
本発明は、少なくとも表面がＣｕを主体とする素材から
なるリードフレームを使用した樹脂モールド型半導体装
置において、樹脂モールド後に切断成形された外部導出
リードの表面にリードフレーム素材のＣｕ面がそのまま
露出している樹脂モールド型半導体装置である。The present invention provides a resin-molded semiconductor device using a lead frame whose surface is made of a material mainly composed of Cu, in which the Cu surface of the lead frame material is exposed as it is on the surface of the external lead-out lead that is cut and molded after resin molding. This is a resin molded semiconductor device.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の第１の実施例を示す縦断面図である。FIG. 1 is a longitudinal sectional view showing a first embodiment of the present invention.
Ｃｕ又はＣｕを主成分とする素材からなるリードフレー
ム１は、ワイヤボンディング性を改善するための部分＾
ｇめっき２を内部リードに有している。このリードフレ
ーム１上に＾ｇペースト３を用いて半導体素子４をマウ
ントし、その後Ａｇペースト３をキュア硬化させ、半導
体素子４を固着している。The lead frame 1 made of Cu or a material containing Cu as a main component is a part for improving wire bonding properties.
G plating 2 is provided on the internal leads. A semiconductor element 4 is mounted on this lead frame 1 using ^g paste 3, and then the Ag paste 3 is cured and the semiconductor element 4 is fixed.
又、半導体素子４の電極部（図示せず）とリードフレー
ム１の内部リード上の部分＾ｇめつき２とを、Ａｕワイ
ヤ５でボンディングしている。更に、半導体素子４等を
保護するために、エポキシ樹脂等のモールド樹脂６で封
止している。外部導出リード１ａは、樹脂モールド後必
要形状に切断、成形されている。なお、外部導出リード
ｌａは、半田めっき等の被膜を施しておらず、リードフ
レームの素材を露出させている。Further, the electrode portion (not shown) of the semiconductor element 4 and the plating portion 2 on the internal lead of the lead frame 1 are bonded with Au wire 5. Furthermore, in order to protect the semiconductor element 4 and the like, it is sealed with a molding resin 6 such as epoxy resin. The external lead 1a is molded with resin and then cut and molded into a required shape. Note that the external lead la is not coated with a coating such as solder plating, and the material of the lead frame is exposed.
次に、本発明の樹脂モールド型半導体装置の製造方法に
ついて説明する。まず、半導体素子をＣｕ又はＣｕ合金
からなるリードフレーム上にマウント固着した後、ワイ
ヤボンディングによって半導体素子の電極と内部リード
とを接続し、樹脂モールドを行う。Next, a method for manufacturing a resin molded semiconductor device of the present invention will be explained. First, a semiconductor element is mounted and fixed on a lead frame made of Cu or a Cu alloy, and then electrodes of the semiconductor element and internal leads are connected by wire bonding, and resin molding is performed.
しかる後に、一つの方法として５〜Ｉ ５ｗｔ％の塩酸
又は硫酸溶液中に３０〜６０秒浸漬し、樹脂モールドさ
れていない部分のリードフレーム表面の酸化物を除去し
た後純水洗浄し、その後８０〜１００℃のエアー中で３
〜ＩＯ分間乾燥する。After that, one method is to immerse the lead frame in a hydrochloric acid or sulfuric acid solution containing 5 to 5 wt% for 30 to 60 seconds to remove oxides on the surface of the lead frame that are not resin-molded, and then wash it with pure water. 3 in ~100℃ air
Dry for ~IO minutes.
又、別の方法としては、組立工程中で高温となる工程、
すなわち半導体素子マウント固着、ワイヤボンディング
、樹脂モールドの各工程で還元性雰囲気（例えばＮ２を
５〜１０ｖｏ１％含むＮ２カス）を用いることにより、
リードフレーム表面の酸化を防止する方法でもよい。Another method is to use a process in which the temperature is high during the assembly process,
That is, by using a reducing atmosphere (for example, N2 scum containing 5 to 10 vol% N2) in each process of semiconductor element mounting fixing, wire bonding, and resin molding,
A method of preventing oxidation of the lead frame surface may also be used.
こうして得られた半導体装置のリードフレームの不要部
分を最後に切断し、所定の必要形状に外部導出リードを
成形して半導体装置を完成する。Finally, unnecessary portions of the lead frame of the semiconductor device thus obtained are cut off, and external leads are formed into a predetermined required shape to complete the semiconductor device.
第２図は本発明の第２の実施例を示す縦断面図である。FIG. 2 is a longitudinal sectional view showing a second embodiment of the invention.
リードフレーム７は、Ｆｅ又はＦｅ−Ｎｉ合金などのＦ
ｅ系合金９からなり、Ｃｕめつきが施されている。又、
ワイヤボンディング性を改善するために、内部リードに
部分Ａｇめっき２が設けである。The lead frame 7 is made of F such as Fe or Fe-Ni alloy.
It is made of e-based alloy 9 and is plated with Cu. or,
In order to improve wire bonding properties, a partial Ag plating 2 is provided on the internal leads.
このリードフレーム７上に、Ａｇペースト３にて半導体
素子４を固着し、半導体素子４と内部リードの部分Ａｇ
めっき２とをＡｕワイヤ５にてボンディング接続し、更
にモールド樹脂６を用いて封止している。A semiconductor element 4 is fixed on this lead frame 7 with Ag paste 3, and a portion of the semiconductor element 4 and internal leads is Ag.
The plating 2 is bonded to the plating 2 using an Au wire 5, and further sealed using a mold resin 6.
外部導出リード７ａは、第１の実施例と同様必要形状に
切断成形され、半田めっき等の被膜は施さず、リードフ
レーム素材のＣｕめつき部を露出させている。The external leads 7a are cut and formed into the required shape as in the first embodiment, and are not coated with solder plating or the like, and the Cu plating portion of the lead frame material is exposed.
なお、組立工程中で前述の還元性雰囲気を使わない場合
、Ｃｕめつき８の厚さは０．４μｍ以上が好ましい。０
．４μｍ未満では、下地のＦｅ又はＦｅ系合金９が酸化
し、外部装置との接続に使用する半田の濡れ性を悪くす
ることがある。In addition, when the above-mentioned reducing atmosphere is not used during the assembly process, the thickness of the Cu plating 8 is preferably 0.4 μm or more. 0
．． If the thickness is less than 4 μm, the underlying Fe or Fe-based alloy 9 may be oxidized, resulting in poor wettability of solder used for connection with external devices.
次に、第１表（次頁）に、従来の半導体装置と本発明に
よる半導体装置との、半田付は性及びプレッシャークツ
カーテスト（ＰＣＴ）による電気特性劣化の割合を、同
一形状、同一条件下で比敦した結果を示す。Next, Table 1 (next page) shows the rate of deterioration of electrical characteristics by soldering and pressure test (PCT) between the conventional semiconductor device and the semiconductor device according to the present invention in the same shape and under the same conditions. The comparative results are shown below.
第１表
半田付は性及びＰＣＴ後電気特性劣化比較結果第１表に
よれば、本発明の半導体装置は半田付は性では差はなく
、耐湿性では改善されていることがわかる。Table 1 Comparison results of soldering properties and deterioration of electrical properties after PCT According to Table 1, it can be seen that the semiconductor devices of the present invention have no difference in soldering properties, but are improved in moisture resistance.
以上説明したように本発明は、外部導出リードに半田め
っき等の被膜を形成せず、リードフレームの素材である
Ｃｕ又はＣｕ系合金のままか、あるいはＦｅ又はＦｅ−
Ｎｉ合金に施したＣｕめっきをそのまま露出させている
。従って、加工工数が低減でき、低コストの半導体装置
を提供できる。As explained above, the present invention does not form a coating such as solder plating on the external leads, and uses Cu or Cu-based alloy, which is the material of the lead frame, or Fe or Fe-
The Cu plating applied to the Ni alloy is exposed as is. Therefore, the number of processing steps can be reduced, and a low-cost semiconductor device can be provided.
又、電解半田めっき処理のような長時間の酸浸漬や、半
田デイツプ処理のような高温処理が樹脂モールド後不要
となり、耐湿性に優れた半導体装置を提供できる。In addition, long-time acid immersion such as electrolytic solder plating or high-temperature treatment such as solder dip treatment is not required after resin molding, making it possible to provide a semiconductor device with excellent moisture resistance.
第１図は本発明の第１の実施例の縦断面図、第２図は本
発明の第２の実施例の縦断面図である。
１・・・リードフレーム、１ａ・・・外部導出リード、
３・・Ａｇペースト、４・・・半導体素子、５・・・Ａ
ｕワイヤ、６・・・モールド樹脂、７・・・リードフレ
ーム、７ａ・・・外部導出リード、８・・・Ｃｕめつき
、９・・・Ｆｅ又はＦｅ系合金。
率 １ 訂FIG. 1 is a longitudinal sectional view of a first embodiment of the invention, and FIG. 2 is a longitudinal sectional view of a second embodiment of the invention. 1... Lead frame, 1a... External lead-out lead,
3...Ag paste, 4...semiconductor element, 5...A
u wire, 6... mold resin, 7... lead frame, 7a... external lead-out lead, 8... Cu plating, 9... Fe or Fe-based alloy. rate 1 revision
Claims (1)
フレームを使用した樹脂モールド型半導体装置において
、樹脂モールド後に切断成形された外部導出リードの表
面にリードフレーム素材のＣｕ面がそのまま露出してい
ることを特徴とする樹脂モールド型半導体装置。In a resin-molded semiconductor device using a lead frame whose surface is made of a material mainly composed of Cu, the Cu surface of the lead frame material is exposed as it is on the surface of the external leads that are cut and molded after resin molding. Characteristics of resin molded semiconductor devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1097978A JP2871716B2 (en) | 1989-04-17 | 1989-04-17 | Method for manufacturing resin-molded semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1097978A JP2871716B2 (en) | 1989-04-17 | 1989-04-17 | Method for manufacturing resin-molded semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02275659A true JPH02275659A (en) | 1990-11-09 |
| JP2871716B2 JP2871716B2 (en) | 1999-03-17 |
Family
ID=14206751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1097978A Expired - Fee Related JP2871716B2 (en) | 1989-04-17 | 1989-04-17 | Method for manufacturing resin-molded semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2871716B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0846107A (en) * | 1994-08-04 | 1996-02-16 | Naramoto Rika Kogyo Kk | Drying method for semiconductor lead frame |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS633444A (en) * | 1986-06-24 | 1988-01-08 | Furukawa Electric Co Ltd:The | Semiconductor device |
-
1989
- 1989-04-17 JP JP1097978A patent/JP2871716B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS633444A (en) * | 1986-06-24 | 1988-01-08 | Furukawa Electric Co Ltd:The | Semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0846107A (en) * | 1994-08-04 | 1996-02-16 | Naramoto Rika Kogyo Kk | Drying method for semiconductor lead frame |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2871716B2 (en) | 1999-03-17 |
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