JPH02283001A - Composition of heat-generating body - Google Patents
Composition of heat-generating bodyInfo
- Publication number
- JPH02283001A JPH02283001A JP1317205A JP31720589A JPH02283001A JP H02283001 A JPH02283001 A JP H02283001A JP 1317205 A JP1317205 A JP 1317205A JP 31720589 A JP31720589 A JP 31720589A JP H02283001 A JPH02283001 A JP H02283001A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- heating element
- glass
- heat
- glass frit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 36
- 239000011521 glass Substances 0.000 claims abstract description 67
- 239000000126 substance Substances 0.000 claims abstract description 13
- 239000000843 powder Substances 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims description 43
- 150000002602 lanthanoids Chemical class 0.000 claims description 7
- 239000002667 nucleating agent Substances 0.000 claims description 7
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 5
- 229910052783 alkali metal Inorganic materials 0.000 claims description 4
- 150000001340 alkali metals Chemical class 0.000 claims description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 4
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 4
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical group [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims description 4
- 229910021344 molybdenum silicide Inorganic materials 0.000 claims description 4
- 229910052706 scandium Inorganic materials 0.000 claims description 4
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 2
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 claims 1
- 229910039444 MoC Inorganic materials 0.000 claims 1
- LGLOITKZTDVGOE-UHFFFAOYSA-N boranylidynemolybdenum Chemical compound [Mo]#B LGLOITKZTDVGOE-UHFFFAOYSA-N 0.000 claims 1
- 229910021341 titanium silicide Inorganic materials 0.000 claims 1
- 238000002156 mixing Methods 0.000 abstract description 10
- 238000000034 method Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 8
- 238000010304 firing Methods 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- 229910020968 MoSi2 Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- GOLCXWYRSKYTSP-UHFFFAOYSA-N Arsenious Acid Chemical compound O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 description 2
- 240000006394 Sorghum bicolor Species 0.000 description 2
- 235000011684 Sorghum saccharatum Nutrition 0.000 description 2
- -1 Ta2o5 Inorganic materials 0.000 description 2
- 235000009430 Thespesia populnea Nutrition 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000007496 glass forming Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 241001648319 Toronia toru Species 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- FHTCLMVMBMJAEE-UHFFFAOYSA-N bis($l^{2}-silanylidene)manganese Chemical compound [Si]=[Mn]=[Si] FHTCLMVMBMJAEE-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003484 crystal nucleating agent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910021338 magnesium silicide Inorganic materials 0.000 description 1
- YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical compound [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Resistance Heating (AREA)
- Ceramic Products (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
(イ)産業上の利用分野
本発明は、家庭又は産業界で使用可能な、電気抵抗熱を
利用した発熱体組成物に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a heating element composition that utilizes electrical resistance heat and can be used at home or in industry.
(ロ)従来の技術
珪化モリブデン、珪化タンタル、珪化マグネシウム、珪
化マンガン等の導電性物質の1つ以上の混合物とガラス
フリットを特定比率で混合してなる抵抗体組成物は、特
開昭53−50496号に開示されている。(b) Prior Art A resistor composition made by mixing a mixture of one or more conductive substances such as molybdenum silicide, tantalum silicide, magnesium silicide, manganese silicide, etc. and glass frit in a specific ratio is disclosed in Japanese Patent Application Laid-Open No. 53-1993- No. 50496.
(ハ)発明が解決しようとする問題点
前記従来技術においては、ガラスフリットの軟化点が6
00〜700℃の普通のガラスであるため、面状発熱体
として基板上に印刷して使用する場合、900〜100
0℃で焼成、使用すると印刷パターンが崩れ、甚だしい
場合には短絡の恐れがある。又、棒状発熱体として焼結
して使用する場合には、使用中に変形が大きくなるとい
う欠点があった。(c) Problems to be solved by the invention In the prior art, the softening point of the glass frit is 6.
Since it is ordinary glass with a temperature of 00 to 700 degrees Celsius, when printed on a substrate as a sheet heating element, it has a temperature of 900 to 100 degrees Celsius.
If fired and used at 0°C, the printed pattern will collapse and, in extreme cases, there is a risk of short circuiting. Further, when used as a rod-shaped heating element by sintering, there is a drawback that deformation becomes large during use.
本発明者等は、上記従来技術の持つ問題点を解消した、
耐熱性があり、しかも低抵抗の発熱体の開発に成功した
。The present inventors have solved the problems of the above-mentioned conventional technology.
We have succeeded in developing a heat-resistant, low-resistance heating element.
(ニ)問題点を解決するための手段
本発明は、導電性物質に混合するガラスフリットを、焼
成時にガラスが結晶化する、結晶化ガラスフリットとし
、導電性物質と結晶化ガラスフリットの混合比率を重量
比で30 : 70〜95:5としたことを特徴とする
。(D) Means for Solving the Problems The present invention provides that the glass frit to be mixed with the conductive substance is a crystallized glass frit in which the glass crystallizes during firing, and the mixing ratio of the conductive substance and the crystallized glass frit is The weight ratio is 30:70 to 95:5.
導電性物質と結晶化ガラスフリットの混合比率を上記の
ようにした理由は、導電性物質が重量比で30重量%以
下では導電性が悪くなり、95重量%以上では発熱体の
焼結性が悪くなるからである。The reason why the mixing ratio of the conductive substance and the crystallized glass frit is set as above is that if the conductive substance is less than 30% by weight, the conductivity will be poor, and if it is more than 95% by weight, the sinterability of the heating element will be poor. Because it will get worse.
更に、本発明では、上記結晶化ガラスフリットとして、
以下の特定比率の組成よりなるものを用いることによっ
て、耐熱性を有し、低抵抗の発熱体を得ることができた
。更に、結晶相を含むことにより、発熱体にした時、靭
性強度が増しクラック耐性が向上した。Furthermore, in the present invention, as the crystallized glass frit,
By using a composition having the following specific ratio, a heat-resistant and low-resistance heating element could be obtained. Furthermore, by including a crystalline phase, when used as a heating element, toughness and strength were increased and crack resistance was improved.
尚、以下の特定比率の組成よりなるガラスフリットであ
っても、焼成時に結晶化しないものは、本発明の結晶化
ガラスフリットには該当しない。Incidentally, even if a glass frit has a composition having the following specific ratio, a glass frit that does not crystallize during firing does not correspond to the crystallized glass frit of the present invention.
又、本発明の組成物より得られた発熱体は、面状発熱体
を作製する時には、低抵抗のためその膜厚を小さくする
ことができるので、経済的に有利であるばかりか、耐熱
衝撃性の優れた発熱体を得ることができた。Furthermore, when producing a sheet heating element, the heating element obtained from the composition of the present invention is not only economically advantageous because its film thickness can be reduced due to its low resistance, but also has excellent thermal shock resistance. A heating element with excellent properties could be obtained.
結晶化ガラスフリットの組成及び混合比率は以下のとお
りである。The composition and mixing ratio of the crystallized glass frit are as follows.
亘
M O: 5〜50重量%
BO:20〜80重量%
Mllo:0〜10重量%
Mlo:O〜 5重量%
SiO:0〜40重量%
Al2O3: 0〜40重量%
Bi O: O〜10重量%
重量
%第3剤 : 0〜20重量%
但し、Mn 、一種以上のアルカリ金属、MIL 、
−種以上のアルカリ土類金属、MrL:スカンジウム、
イツトリウム、及び/又はランタニド
尚、本明細書のランタニドは、ランタン(La)からル
テチウム(Lu)までの元素の総称である。Wataru M O: 5-50 wt% BO: 20-80 wt% Mllo: 0-10 wt% Mlo: O-5 wt% SiO: 0-40 wt% Al2O3: 0-40 wt% BiO: O-10 Weight % Weight % Third agent: 0 to 20 weight % However, Mn, one or more alkali metals, MIL,
- more than one species of alkaline earth metal, MrL: scandium;
Yttrium and/or Lanthanide Note that lanthanide in this specification is a general term for elements from lanthanum (La) to lutetium (Lu).
又、結晶核を形成する核形成剤は、T i O2、Zr
O2、P205.5n02 、Zno、MoO3、Ta
2 o5、Nb205 、AS203の少なくとも1種
又は2種以上を用いる。In addition, nucleating agents that form crystal nuclei include T i O2, Zr
O2, P205.5n02, Zno, MoO3, Ta
At least one or two or more of 2o5, Nb205, and AS203 are used.
上記組成及び混合比率の限定理由は、以下のとおりであ
る。The reasons for limiting the above composition and mixing ratio are as follows.
MxOは、Mg、Ca、Sr、Ba、等の一種以上のア
ルカリ土類金属の酸化物であり、MTLo−xB203
系の結晶相の形成のために、B2O3と共に必須の成分
である。MILOが5重量%未満では、硼酸主体のガラ
スとなり、ガラス成形工程中に分相を生じ、均質ガラス
の成形ができない。又、M” Oが50重量%を超える
と、ガラス中のB2O3が相対的に減少するため、導電
性物質と混合して得られた発熱体の抵抗値が高くなると
共に、ガラス化も困難になる。このMOは、25〜45
重量%が更に好ましい。MxO is an oxide of one or more alkaline earth metals such as Mg, Ca, Sr, Ba, etc., and MTLo-xB203
It is an essential component together with B2O3 for the formation of the crystalline phase of the system. If MILO is less than 5% by weight, the glass will consist mainly of boric acid, and phase separation will occur during the glass forming process, making it impossible to form a homogeneous glass. Furthermore, when M"O exceeds 50% by weight, B2O3 in the glass decreases relatively, so the resistance value of the heating element obtained by mixing it with a conductive substance increases and it becomes difficult to vitrify. This MO is 25 to 45
% by weight is more preferred.
BOは、MTLO・xB203系結晶相の形成のために
MILOと共に必須である。又、発熱体にした時の抵抗
値に大きな影響を及ぼすものである。即ち、20重量%
未満では、発熱体の抵抗値が高くなり、80重量%を超
えると、ガラス成形工程中に硼酸が分相し、均贋なガラ
スが得られない。20〜80重量%では、B2O3の量
の増加と共に抵抗値が低下する。このB2O3は、20
〜60重量%が更に好ましい。BO is essential together with MILO for the formation of the MTLO xB203 crystal phase. Moreover, it has a great influence on the resistance value when used as a heating element. i.e. 20% by weight
If it is less than 80% by weight, the resistance of the heating element becomes high, and if it exceeds 80% by weight, the phase of boric acid will separate during the glass forming process, making it impossible to obtain a uniform glass. From 20 to 80% by weight, the resistance value decreases with increasing amount of B2O3. This B2O3 is 20
-60% by weight is more preferred.
M−03は、Sc(スカンジウム)、Y(イツトリウム
)及び/又はランタニドの酸化物であり、発熱体と基板
との密着強度を上げるために加えるが、10重量%を超
えてもその効果がそれ以上良くならないため、0〜10
重1%とする。このM2O3は1〜5重量%が更に好ま
しい。M-03 is an oxide of Sc (scandium), Y (yttrium) and/or lanthanide, and is added to increase the adhesion strength between the heating element and the substrate, but even if it exceeds 10% by weight, its effect will be reduced. 0-10 because it doesn't get any better
The weight is 1%. This M2O3 is more preferably 1 to 5% by weight.
M2Oは、Li、Na、に、Rb等の一種以上のアルカ
リ金属の酸化物であり、
5重量%を超えるとそのガラスを導電性物資と混合して
発熱体として使用した時、アルカリイオンの移動による
組成変化及び抵抗値変化を生じるため、せいぜい5重量
%であり、0重量%でもよい。M2O is an oxide of one or more alkali metals such as Li, Na, Rb, etc. If it exceeds 5% by weight, the movement of alkali ions will occur when the glass is mixed with a conductive material and used as a heating element. Since this causes compositional changes and resistance value changes, the amount is at most 5% by weight, and may be 0% by weight.
実際にはガラス原料中に約0.1%以内の量で不純物と
して含まれる。Actually, it is contained as an impurity in the glass raw material in an amount of about 0.1% or less.
S i O2は、安定なガラスを得るために適量添加さ
れるが、40重量%を超えると相対的に8203が少な
くなり、上述した抵抗値が高くなるので、好ましくない
。このS i O2は、2〜10重1%が更に好ましい
。S i O 2 is added in an appropriate amount in order to obtain a stable glass, but if it exceeds 40% by weight, 8203 becomes relatively small and the above-mentioned resistance value becomes high, which is not preferable. This S i O2 is more preferably 2 to 10% by weight.
Al2O3も、S i O2と同様、安定なガラスを得
るために適量添加されるが、40重量%を超えると、相
対的にB2O3が少なくなり、好ましくない。このA
I 203は、2〜10重量%が更に好ましい。Like S i O2, Al2O3 is also added in an appropriate amount in order to obtain a stable glass, but if it exceeds 40% by weight, B2O3 becomes relatively small, which is not preferable. This A
I203 is more preferably 2 to 10% by weight.
Bi2O3は、基板への密着性向上及び低抵抗化のため
に適量添加されるが、10重量%を越えると、ガラスの
物性が大きく変動するため好ましくない。このBi2O
3は、5〜10重量%が更に好ましい。Bi2O3 is added in an appropriate amount to improve adhesion to the substrate and reduce resistance, but if it exceeds 10% by weight, it is not preferred because the physical properties of the glass will vary greatly. This Bi2O
3 is more preferably 5 to 10% by weight.
TiO2、ZrO2、P205.5n02 、Zno、
MoO3、Ta2 o5、Nb205 、As2O3の
少なくとも1種又は2種以上は、いずれも結晶相形成の
ため、結晶核形成剤として添加される。通常、この核形
成剤の添加量は、20重量%以下である。この結晶核形
成剤は、ガラスの組成を適当に選択することにより、ガ
ラスの結晶化が得られれば、必ずしも添加する必要はな
い。TiO2, ZrO2, P205.5n02, Zno,
At least one or two or more of MoO3, Ta2o5, Nb205, and As2O3 are added as crystal nucleation agents to form a crystal phase. Usually, the amount of this nucleating agent added is 20% by weight or less. This crystal nucleating agent does not necessarily need to be added if the glass can be crystallized by appropriately selecting the composition of the glass.
添付図に示されるように、本発熱体1にガラス2でオー
バーコート層を施すことにより漏電防止能が付与される
だけでなく、60℃、90%RH中1.o−oo時間放
置しても抵抗の変化はみられず、より良好な発熱体が得
られることがわかった。As shown in the attached figure, by providing the heating element 1 with an overcoat layer of glass 2, not only the ability to prevent electric leakage is imparted, but also the ability to prevent leakage is provided. No change in resistance was observed even after standing for o-oo hours, indicating that a better heating element could be obtained.
使用するガラスは発熱体と膨張率が合致したもので、発
熱体と反応しないガラスが望ましい。オーバーコートの
方法は、ガラスの組成を選択することにより、発熱体と
の同時焼成も可能であり、オーバーコートすることによ
る性能上の低下はみられない。The glass used has an expansion coefficient that matches that of the heating element, and is preferably a glass that does not react with the heating element. In the overcoating method, by selecting the composition of the glass, simultaneous firing with the heating element is possible, and no deterioration in performance is observed due to overcoating.
本発明の発熱体は、以下の実施例で示した如く、ペース
トとして基板に印刷して作製する外、プレスして成形体
とすることもできるし、グリーンシートに挟んで焼結し
たり、或は上記の成形体をセラミック粉末に埋め込み焼
成することもでき、その適用方法は、以下の実施例に記
した適用方法に限定されない。As shown in the following examples, the heating element of the present invention can be produced by printing it on a substrate as a paste, pressing it into a molded body, sandwiching it between green sheets and sintering it, or It is also possible to embed the above-mentioned molded body in ceramic powder and fire it, and the application method is not limited to the application method described in the following examples.
(ホ)作用
本発明の発熱体は、前記のとおりMOと820 との反
応によりM” O・x B 203 (M”は、Mg
、Ca、Ba、Srで、x = 0.3〜3 )系の結
晶相ができるため、耐熱性が向上し、抵抗も低くなる。(E) Effect The heating element of the present invention is produced by the reaction of MO and 820 as described above, resulting in M"O.x B203 (M" is Mg
, Ca, Ba, and Sr form a crystalline phase of x = 0.3 to 3) system, which improves heat resistance and lowers resistance.
更に、この結晶化ガラスと導電性物質の一つである珪化
モリブデン、例えば、MoSi2と、反応することによ
って、低抵抗のMoBが、珪化モリブデン、例えば、M
o S i 2とガラスフリットとの界面に生成し、
これが導電層となり、抵抗値が低下するものと考えられ
る。(このMoBの生成は、X線回折法で確認された。Furthermore, by reacting this crystallized glass with molybdenum silicide, such as MoSi2, which is one of the conductive substances, the low-resistance MoB becomes molybdenum silicide, such as M
Produced at the interface between o S i 2 and glass frit,
It is thought that this becomes a conductive layer and the resistance value decreases. (This generation of MoB was confirmed by X-ray diffraction method.
)
(へ)実施例
大旌透上
下記表1のガラス組成1になるようにガラスを以下の方
法で調製し、結晶化ガラスフリットを製造した。) (f) Example Toru Ohki A glass was prepared by the following method so as to have the glass composition 1 shown in Table 1 below, and a crystallized glass frit was manufactured.
即ち、表1の組成1となるようにそれぞれの炭酸塩、水
酸化物、酸化物等を原料として用い、常法に従い、13
50℃で30分間溶融後、ロールで急冷し、ガラスフレ
ークを得た。得られたガラスフレークをボールミルで6
時間粉砕し、平均粒径2〜3ミクロンのガラス粉末(フ
リット)を得た。That is, using each carbonate, hydroxide, oxide, etc. as raw materials so as to have composition 1 in Table 1, 13
After melting at 50°C for 30 minutes, it was rapidly cooled with a roll to obtain glass flakes. The obtained glass flakes were milled in a ball mill for 6
The glass powder (frit) was pulverized for a period of time to obtain a glass powder (frit) with an average particle size of 2 to 3 microns.
このガラスフリットと平均粒径3ミクロンのM o S
i 2を表2のAに示した種々の比率(重量比)で十
分混合した後、その混合物を有機高分子(例えば、アク
リル系樹脂)をバインダーとするビヒクルと約80 :
20の比率(重量比)で十分混合し、ペーストとしな
。このペーストを200メツシユスクリーンでアルミナ
基板上に厚み20ミクロンで印刷し、130℃で30分
乾燥後、窒素雰囲気中で1000℃で10分間焼成して
、ガラスを結晶化し、冷却後、抵抗を測定し、その結果
を表2の1に示す。This glass frit and M o S with an average particle size of 3 microns
After thoroughly mixing i2 at various ratios (weight ratios) shown in A of Table 2, the mixture was mixed with a vehicle containing an organic polymer (e.g., acrylic resin) as a binder at a ratio of about 80:
Mix thoroughly at a ratio of 20% (weight ratio) to form a paste. This paste was printed to a thickness of 20 microns on an alumina substrate using a 200 mesh screen, dried at 130°C for 30 minutes, and then fired at 1000°C for 10 minutes in a nitrogen atmosphere to crystallize the glass. After cooling, the resistor was formed. The results are shown in 1 of Table 2.
X將伝ユ
表1のガラス組成2に示す組成になるようにガラスを調
製して得られた結晶化ガラスフリットを用い、実施例1
と全く同様の処理を行い、抵抗値を測定した結果を表2
の2に示す。Example 1 was prepared using a crystallized glass frit obtained by preparing glass to have the composition shown in Glass Composition 2 in Table 1.
Table 2 shows the results of measuring the resistance value using exactly the same process as above.
It is shown in 2.
釆旌医旦
表1のガラス組成3に示す組成になるようにガラスを調
製して得られた結晶化ガラスフリットを用い、導電性微
粉末として、0.1〜数ミクロンの粒径の炭化珪素を用
い、表2のAに示した種々の比率(重量比)で十分混合
した後、その混合物を有機高分子(例えば、アクリル系
樹脂)をバインダーとするビヒクルと約80 : 20
の比率(重量比)で十分混合し、ペーストとした。Silicon carbide with a particle size of 0.1 to several microns is used as a conductive fine powder using a crystallized glass frit obtained by preparing glass to have the composition shown in Glass Composition 3 in Table 1. After mixing thoroughly at various ratios (weight ratios) shown in A of Table 2 using
They were thoroughly mixed at the ratio (weight ratio) to form a paste.
このペーストを200メツシユスクリーンでアルミナ基
板上に厚み20ミクロンで印刷し、130℃で30分乾
燥後、窒素雰囲気中で1200℃で10分間焼成して結
晶化し、冷却後、抵抗を測定し、その結果を表2の3に
示す。This paste was printed to a thickness of 20 microns on an alumina substrate using a 200 mesh screen, dried at 130°C for 30 minutes, then fired at 1200°C for 10 minutes in a nitrogen atmosphere to crystallize, and after cooling, the resistance was measured. The results are shown in Table 2-3.
犬旌透A
表1のガラス組成3になるようにガラスを調製して得ら
れた結晶化ガラスフリットを用い、導電性微粉末として
珪化タングステンを用い、窒素雰囲気中で1000℃で
10分間焼成する以外は、上記実施例と全く同様に処理
し、抵抗を測定した結果を表2の4に示す。Toru Inuyoshi A: Using a crystallized glass frit obtained by preparing glass to have glass composition 3 in Table 1, using tungsten silicide as the conductive fine powder, baking at 1000°C for 10 minutes in a nitrogen atmosphere. Except for this, the process was carried out in exactly the same manner as in the above example, and the resistance was measured. The results are shown in Table 2-4.
夾旌舅至
表1のガラス組成5になるようにガラスを調製して得ら
れた結晶化ガラスフリットを用い、導電性微粉末として
MoSi2を用い、実施例1と全く同様に処理し、抵抗
を測定した結果を表2の5に示す。Using a crystallized glass frit prepared by preparing glass to have glass composition 5 in Table 1 and using MoSi2 as the conductive fine powder, the process was carried out in exactly the same manner as in Example 1, and the resistance was The measured results are shown in 5 of Table 2.
犬旌房旦
表1のガラス組成6になるように、ガラスを調整して得
られた結晶化ガラスフリットを用い、導電性微粉末とし
てMoSi2を用い、実施例1と全く同様に処理し、抵
抗を測定した結果を表2の6に示す。Using a crystallized glass frit obtained by adjusting the glass so that the glass composition 6 in Table 1 was obtained, MoSi2 was used as the conductive fine powder, the process was carried out in exactly the same manner as in Example 1, and the resistance was The measurement results are shown in Table 2, 6.
比数摺
本発明の先行技術として引用した特開昭53−5049
6号に開示されたと同様(但し、窒素雰囲気での焼成を
除き)の発熱体く表1の比較例の欄の組成のガラスフリ
ットを使用)を作製し、本発明の実施例1と全く同様に
して、抵抗値を測定した結果を表2の比較例の欄に示す
。尚、この比較例のガラス(よ、核形成剤を含まないの
で、約1000℃の焼成条件では、ガラスは結晶化しな
い。Rizuzuri JP-A-53-5049 cited as prior art of the present invention
A heating element similar to that disclosed in No. 6 (with the exception of firing in a nitrogen atmosphere, using a glass frit having the composition in the Comparative Example column of Table 1) was prepared, and a heating element was prepared that was exactly the same as Example 1 of the present invention. The results of measuring the resistance values are shown in the Comparative Example column of Table 2. Incidentally, since the glass of this comparative example does not contain a nucleating agent, it does not crystallize under the firing conditions of about 1000°C.
(以下、余白)
表1
ニガラス組成(重量%)
表2 面積抵抗値(Ω/5quare)するものもあっ
たが、約0.1重量%程度であるので無視した。)
(但し、Aは、導電性微粉末/ガラスフリットの重量比
)
(へ)実施例の発熱体のその他のテスト結果上記のよう
に、本発明の実施例の発熱体は、比較例のものと比較し
て、抵抗値が1桁低下し、その分だけ薄膜にすることが
でき経済的で且つ応用範囲が広いが、以下のテストで耐
熱性や耐熱衝撃性も優れていることが確かめられた。(Hereinafter, blank space) Table 1 Nigarasu composition (wt%) Table 2 Sheet resistance value (Ω/5 square) Some of them had a value, but since it was about 0.1 wt%, they were ignored. ) (However, A is the weight ratio of conductive fine powder/glass frit) (F) Other test results of the heating element of the example As mentioned above, the heating element of the example of the present invention is the same as that of the comparative example. The resistance value is lowered by one order of magnitude compared to the previous one, and the film can be made thinner by that amount, making it more economical and having a wider range of applications.The following tests have confirmed that it also has excellent heat resistance and thermal shock resistance. Ta.
ヒートサイクル試験(800℃まで3分で昇温し、この
温度に2分間保持した後に急冷)に於いても、本発明の
発熱体ペーストを印刷した場合には、基板との剥離は全
く見られず、比抵抗の変化も問題にならなかった。Even in a heat cycle test (heating to 800°C in 3 minutes, holding at this temperature for 2 minutes, and then rapidly cooling), no peeling from the substrate was observed when the heating element paste of the present invention was printed. Also, changes in resistivity were not a problem.
又、耐熱衝撃性を調べるため、発熱体印刷基板を900
℃に加熱しておいて、水中に投入しても基板との剥離は
全く観察されず、密着性の良好な発熱体とすることがで
きた。In addition, in order to examine thermal shock resistance, the heating element printed board was
Even when the heating element was heated to .degree. C. and placed in water, no peeling from the substrate was observed, making it possible to obtain a heating element with good adhesion.
(ト)効果
本発明は、前記の如く特定の組成と比率の結晶化ガラス
を用いることにより、耐熱性のある低抵抗の発熱体とす
ることができるため、その膜厚を薄くでき、それ故に、
耐熱衝撃性も優れた、経済的に有利な発熱体とすること
ができ、その応用範囲は広く、業界に資する効果は極め
て大である。(G) Effect The present invention uses crystallized glass having a specific composition and ratio as described above to make a heat-resistant and low-resistance heating element, so its film thickness can be reduced, and therefore, ,
It can be made into an economically advantageous heating element with excellent thermal shock resistance, has a wide range of applications, and has an extremely large effect on industry.
図は、本発明の発熱体組成物にガラスをオーバーコート
して得られた発熱体の断面図である。
1・・・・・・・・・発熱体組成物、2・・・・・・・
・・ガラス。The figure is a sectional view of a heating element obtained by overcoating the heating element composition of the present invention with glass. 1...Heating element composition, 2...
...Glass.
Claims (6)
0〜95:5重量%の比率で含有することを特徴とする
発熱体組成物。(1) Conductive fine powder and crystallized glass frit at 30:7
A heating element composition characterized in that it contains in a ratio of 0 to 95:5% by weight.
珪化タングステン、炭化珪素、炭化モリブデン、硼化モ
リブデン等の少なくとも一種からなることを特徴とする
請求の範囲(1)に記載の発熱体組成物。(2) The conductive fine powder is molybdenum silicide, titanium silicide,
The heating element composition according to claim (1), characterized in that it comprises at least one of tungsten silicide, silicon carbide, molybdenum carbide, molybdenum boride, and the like.
とを特徴とする請求の範囲(1)又は(2)に記載の発
熱体組成物。 M^IIO:5〜50重量% B_2O_3:20〜80重量% ▲数式、化学式、表等があります▼ ▲数式、化学式、表等があります▼ SiO_2:0〜40重量% Al_2O_3:0〜40重量% Bi_2O_3:0〜10重量% 核形成剤:0〜20重量% 但し、M^I:一種以上のアルカリ金属、M^II:一種
以上のアルカリ土類金属、M^III:スカンジウム、イ
ットリウム、及び/又はランタニド(3) The heating element composition according to claim (1) or (2), wherein the crystallized glass frit has the following composition. M^IIO: 5-50% by weight B_2O_3: 20-80% by weight ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ SiO_2: 0-40% by weight Al_2O_3: 0-40% by weight Bi_2O_3: 0 to 10% by weight Nucleating agent: 0 to 20% by weight However, M^I: one or more alkali metals, M^II: one or more alkaline earth metals, M^III: scandium, yttrium, and/or or lanthanide
とを特徴とする請求の範囲(1)乃至(3)のいずれか
に記載の発熱体組成物。 M^IIO:25〜45重量% B_2O_3:20〜60重量% ▲数式、化学式、表等があります▼ ▲数式、化学式、表等があります▼ SiO_2:2〜10重量% Al_2O_3:2〜10重量% Bi_2O_3:5〜10重量% 核形成剤:0〜20重量% 但し、M^I:一種以上のアルカリ金属、M^II種以上
のアルカリ土類金属、M^III:スカンジウム、イット
リウム及び/又はランタニド(4) The heating element composition according to any one of claims (1) to (3), wherein the crystallized glass frit has the following composition. M^IIO: 25-45% by weight B_2O_3: 20-60% by weight ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ SiO_2: 2-10% by weight Al_2O_3: 2-10% by weight Bi_2O_3: 5-10% by weight Nucleating agent: 0-20% by weight However, M^I: one or more alkali metals, M^II or more alkaline earth metals, M^III: scandium, yttrium and/or lanthanide
5、SnO_2、ZnO、MoO_3、Ta_2O_5
、Nb_2O_5、As_2O_3の少なくとも1種又
は2種以上で特許請求の範囲(4)に記載の発熱体組成
物。(5) Nucleating agents are TiO_2, ZrO_2, P_2O_
5, SnO_2, ZnO, MoO_3, Ta_2O_5
, Nb_2O_5, and As_2O_3, the heating element composition according to claim (4).
発熱体組成物にガラスをオーバーコートして得られた発
熱体。(6) A heating element obtained by overcoating the heating element composition according to any one of claims (1) to (5) with glass.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1317205A JPH0722041B2 (en) | 1988-12-31 | 1989-12-05 | Heating element composition |
| US08/216,615 US5470506A (en) | 1988-12-31 | 1994-03-23 | Heat-generating composition |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33555088 | 1988-12-31 | ||
| JP63-335550 | 1988-12-31 | ||
| JP1317205A JPH0722041B2 (en) | 1988-12-31 | 1989-12-05 | Heating element composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02283001A true JPH02283001A (en) | 1990-11-20 |
| JPH0722041B2 JPH0722041B2 (en) | 1995-03-08 |
Family
ID=26568957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1317205A Expired - Fee Related JPH0722041B2 (en) | 1988-12-31 | 1989-12-05 | Heating element composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0722041B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5637261A (en) * | 1994-11-07 | 1997-06-10 | The Curators Of The University Of Missouri | Aluminum nitride-compatible thick-film binder glass and thick-film paste composition |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50124908A (en) * | 1974-03-22 | 1975-10-01 |
-
1989
- 1989-12-05 JP JP1317205A patent/JPH0722041B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50124908A (en) * | 1974-03-22 | 1975-10-01 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5637261A (en) * | 1994-11-07 | 1997-06-10 | The Curators Of The University Of Missouri | Aluminum nitride-compatible thick-film binder glass and thick-film paste composition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0722041B2 (en) | 1995-03-08 |
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