JPH02284120A - Active matrix substrate and active matrix display device - Google Patents

Abstract

PURPOSE:To correct a picture element defect by dividing a picture element electrode to plural electrode parts and disconnecting an additive capacity region from a non-additive capacity region and connecting the non-additive capacity regions of the adjacent electrode parts with each other when an insulation defect arises between the additive capacity region of the electrode part and the electrode for the additive capacity. CONSTITUTION:The electrode part 23 is divided to the additive capacity region 25a and the non-additive capacity region 24a which are connected electrically by a conductive part 27a; further, a conductive film 29 which bridges between the non-additive capacity region 24a and the non-additive capacity region 24b is provided. The conductive part 27a is cut by a laser trimmer, ultrasonic cutter, etc., to disconnect the regions if the insulation defect arises between the additive capacity region 25a and the additive capacity electrode 15. The non-additive capacity regions 24a, 24b are connected by irradiating the non-additive capacity regions 24a, 24b and the weight parts 29a, 29b of the conductive film 29 with light energy by using the laser trimmer, etc. The picture element defect is corrected in this way.

Description

Detailed Description of the Invention (Field of Industrial Application) The present invention relates to thin film transistors (rTFTJ
The present invention relates to an active matrix substrate provided with switching elements such as (referred to as ) and an electrode for additional capacitance for charge retention, and an active matrix display device using the active matrix substrate.

(Prior Art) In a matrix display device, a display pattern is formed on a screen by selecting display pixels arranged in a matrix. As a method for selecting display picture elements, an active matrix method is known in which a switching element is connected to each picture element and the picture element electrode is driven through the switching element. Since the active matrix drive system is capable of high-contrast display, it has been put to practical use in liquid crystal televisions, word processors, display devices for convenience stores, and the like.

FIG. 6 shows an example of a conventional active matrix substrate. Each of the picture element electrodes 42 arranged in a matrix is provided with a TPT 3 as an address switching element. A gate pass line 4 and a source pass line 5 for driving the TPT 3 are arranged between each picture element electrode 42 so as to cross each other, and an additional capacitance is provided below the picture element electrode 42 in parallel to the gate pass line 4. An electrode 15 is provided.

FIG. 7 is a cross-sectional view of the vicinity of the TFT 3 taken along the line ■-■ in FIG. A gate electrode 7 branched from the gate pass line 4 is formed on the glass substrate 6. An insulating film (anodized film) 8 is formed on the gate electrode 7 , and a gate insulating film 9 is further formed over the entire surface of the substrate 6 . A semiconductor film 10 is formed above the gate electrode 7 with insulating films 8 and 9 interposed therebetween. On the semiconductor film IO, a first source ? connected to the source pass line 5 is provided. A J pole 11, a second source electrode 12, and a first drain electrode 13 and a second drain electrode 14 for supplying charge to the picture element electrode 42 are deposited in this order, respectively. Picture element electrode 42
is formed on the gate insulating film 9.

The additional capacitor electrode 15 is provided on the glass substrate 6 at the same time as the gate pass line 4 and the gate electrode 7, and the insulating film 8.9 is provided on the glass substrate 6.
It is located below the end of the picture element electrode 42 via the picture element electrode 42, and forms an additional capacitance with the picture element electrode 42. This additional capacitor accumulates charge when a scanning pulse is applied, and continues to apply the accumulated charge to the liquid crystal for one frame period after the scanning pulse disappears until the next scanning pulse is applied. provided.

To manufacture such an active matrix substrate,
Very complicated processes such as many thin film formations and etchings must be performed. In addition, TPT as a switching element and electrodes for additional capacitance are provided in all of the huge number of picture element electrodes, ranging from 100,000 to 500,000 or more, and the electrical characteristics of each one must be ensured. In order to
Precise process control is required.

(Problem to be solved by the invention) For this reason, even if the manufacturing process is well controlled, pixel defects may occur due to defects in switching elements, leakage between the additional capacitance electrode and the pixel electrode, etc. There is. Since such pixel defects degrade image quality, they are checked at the quality inspection stage. A picture element defect due to leakage between the picture element electrode and the additional capacitance electrode can be corrected as described below, but a picture element defect due to a defective switching element cannot be corrected.

A pixel defect caused by leakage between the pixel electrode and the additional capacitor electrode is corrected by cutting the portion of the pixel electrode where the leak has occurred above the additional capacitor electrode. The pixel electrodes are cut using a laser CVD, a laser trimmer, an ultrasonic power cap, or the like.

However, since the cutting distance is the length of one side of the picture element electrode, it is difficult to cut completely and it takes a long time. In addition, if the picture element electrode on the additional capacitance electrode is cut off in this way, the picture element formed by the picture element electrode has a lower charge retention rate than other picture elements, which causes display unevenness. becomes. The occurrence of such display unevenness is undesirable because it degrades image quality.

In order to identify the location where the pixel defect as described above occurs, it is suitable to carry out the method in which the display device is assembled and actually displayed because it is simple and accurate. With the display device activated, these defects are easily visible using a magnifying glass or the like. In contrast, identifying the location of a pixel defect in an active matrix substrate is not easy because it is necessary to individually test all operating characteristics of a large number of switching elements and pixel electrodes. Performing such inspections requires the use of extremely high-precision measuring equipment and complex inspection processes. On the other hand, the above-mentioned work for correcting pixel defects using laser light is performed while the active matrix substrate is in use, and cannot be performed while the display device is assembled. If repair work is performed while the display device is assembled, some of the metal vaporized or melted by the laser light will mix into the liquid crystal display medium, significantly degrading the optical properties of the display medium. Therefore, in reality, correction of the picture element electrode is performed in the state of the active matrix substrate.

The present invention has been made in view of these problems, and an object of the present invention is to easily solve the problem when a pixel defect occurs due to poor insulation between the pixel electrode and the additional capacitance electrode. Moreover, it is an object of the present invention to provide an active matrix substrate that can correct pixel defects in a short time and does not cause display unevenness. Another object of the present invention is to provide an active matrix substrate that allows picture element defects to be easily repaired even if they occur due to defective switching elements.

Still another object of the present invention is to provide an active matrix device in which the above-mentioned pixel defects can be corrected while the display device is in use.

(Means for Solving the Problems) The active matrix substrate of the present invention includes a picture element electrode arranged in a matrix on an insulating substrate and divided into a plurality of electrode parts, and a picture element electrode provided below the picture element electrode. It has an electrode for additional capacitance and a plurality of parallel signal wirings that are close to each of the electrode parts and electrically connected to each other, and the electrode for additional capacitance is located below each of the electrode parts. Each of the electrode portions is divided into an additional capacitance region and a non-additional capacitance region facing the additional capacitance electrode, and a conductor is provided to electrically connect the additional capacitance region and the non-additional capacitance region. and a switching element provided in each of the non-additional capacitance regions and connected to the adjacent signal wiring, and a switching element that bridges the mutually adjacent non-additional capacitance regions and is insulated from a part of each of the non-additional capacitance regions. an electrically conductive film which is electrically conductive in a non-conducting state through the film, thereby achieving the above object.

Further, the active matrix display device of the present invention includes a pair of insulating substrates, one of which is translucent, and a display medium that is inserted between the substrates and whose optical characteristics are modulated in response to an applied voltage. A picture element electrode arranged in a matrix on the inner surface of one of the pair of substrates and divided into a plurality of electrode parts, an additional capacitance electrode provided below the picture element electrode, and an additional capacitance electrode provided below the picture element electrode; a plurality of parallel signal wirings that are close to each other and electrically connected to each other; the additional capacitance electrode is located below each of the electrode portions; It is divided into an additional capacitance region and a non-additional capacitance region facing the capacitance electrode, and a conductive portion electrically connects the additional capacitance region and the non-additional capacitance region, and a conductive portion for each of the non-additional capacitance region. A switching element provided and connected to the adjacent signal wiring and the non-additional capacitance region adjacent to each other are bridged, and the switching element is overlapped with a part of each of the non-additional capacitance region via an insulating film in a non-conducting state. A protective film is formed above the conductive portion and the conductive film, thereby also achieving the above object.

(Function) In the active matrix substrate of the present invention, the picture element electrode is divided into a plurality of electrode parts. If an insulation failure occurs between the additional capacitance region of any electrode section and the vL pole for additional capacitance, the conductive part between the additional capacitance region and the non-additional capacitance region should be removed by laser CVD, laser trimmer, or These regions can be separated by cutting with a sonic cutter or the like.

Then, the non-additional capacitance region and the non-additional capacitance region of the electrode portion adjacent to the region are connected via a conductive film. This connection is performed by irradiating optical energy such as laser light to the overlapping portion of each non-additional capacitance region and the conductive film. The insulating film between each non-additional capacitance region and the conductive film is destroyed by the light energy irradiation, and these adjacent non-additional capacitance regions are electrically connected. The electrode section that separates the additional capacitance region operates only in the non-additional capacitance region, but the adjacent electrode section to which the non-additional capacitance region is connected operates.
Since the additional capacitance area exists, additional capacitance is formed thereby, and display unevenness does not occur.

If any of the switching elements connected to each electrode section becomes defective and a pixel defect occurs, the non-additive capacitance area of the electrode section to which the defective switching element is connected and the area adjacent to the electrode section The non-additional capacitance area of the normal electrode part is
Connect via a conductive film. This connection is made by irradiating light energy such as laser light in the same manner as described above. Furthermore, if necessary, the defective switching element can be separated from the picture element electrode.

The active matrix display device of the present invention includes a pair of opposing substrates, at least one of which is transparent. One of the pair of substrates is an active matrix substrate having the above structure, a protective film is further formed on the conductive portion and above the conductive film, and a display medium is enclosed between the opposing substrate. It has become. With such a configuration, after identifying the location where a pixel defect occurs while the display device is in operation, it is possible to correct the pixel defect using a laser beam or the like from outside the display device. Even if the conductive part or the conductive film is irradiated with laser light during correction, the material constituting the conductive part or the conductive film will not be mixed into the display medium due to the preservation tHA. In other words, the cutting of the conductive part or the connection between the conductive film and the electrode part is performed between the protective film and the substrate, which are separated from the display medium, so that pixel defects can be corrected without degrading the image quality. can.

(Example) The present invention will be described below with reference to an example. FIG. 1 shows an embodiment of an active matrix substrate of the present invention. In the active matrix substrate 1 of this embodiment, the picture element electrode 23 is divided into two electrode parts 23a and 23b. As described later, each electrode portion 23a and 23b further includes an additional capacitance region 25a and a non-additional capacitance region 24a1.
It is divided into an additional capacitance region 25b and a non-additional capacitance region 24b. TFTs are placed at the corners of the electrode parts 23a and 23b.
3a and 3b are drain electrodes 14a and 14b, respectively.
connected by. The structures of the TFTs 3a and 3b are similar to those shown in FIG. 7.The gate electrodes 7a and 71) of the oTFTs 3m and 3b are respectively connected to a gate pass line 4 that supplies a scanning signal. Source electrodes 12a and 12b of TPTs 3a and 3b are respectively connected to source path lines 5 that supply data signals. In this embodiment, source path lines 5 are connected to two source wirings 5.
It consists of a, 5b and branch line 5C. The source wiring 5a is arranged between the two electrode parts 23a and 23b, and the source wiring $
15b is the electrode part 2 of the picture element electrode adjacent to the electrode part 23b.
3a. The branch line 5C electrically connects the two source lines 5a and 5b. The electrode portion 23b includes two source wirings 5a, 5b and two branch lines 5.
It is located in a rectangular area surrounded by c and 5c.

The source electrodes 12a and 12b each have a source wiring 5
a and 5b. With such a configuration,
TFTs 3a and 3b are driven by the same scanning signal and the same data signal.

Therefore, the electrode parts 23a and 23b are driven simultaneously, and the electrode parts 23a and 23b are driven simultaneously.
It functions as two picture element electrodes.

An additional capacitance electrode 15 is provided in parallel to the gate pass line 4 below the portions of the electrode portions 23a and 23b along the sides farthest from the TFTs 3a and 3b, respectively. Similar to the conventional example described above, the additional capacitance electrode 15 is formed at the same time as the gate pass line 4 is formed. In this embodiment, the electrode portion 23a includes an additional capacitance region 25a located directly above the additional capacitance electrode 15, and the additional capacitance j! Area 25
It is divided into non-additional capacity areas 24a other than a. Similarly, the electrode portion 23b is divided into an additional capacitance region 25b and a non-additional capacitance region 24b. Additional capacity area 25a
and the non-additional capacity area 24a, and the addition capacity area 25
Conductive portions 27a and 27b are provided between the non-additional capacitance region 24b and the non-additional capacitance region 24b, respectively.

FIG. 2 shows a cross-sectional structure near the conductive portion 27a along line nn in FIG. 1. The cross-sectional configuration of the conductive portion 27b is also similar to that shown in FIG. An additional capacitor electrode 15 is formed on the glass substrate 6, and an insulating film 8 is formed on the surface of the additional capacitor electrode 15 by anodic oxidation. Further, a gate insulating film 9 is deposited over the entire surface of the substrate. A conductive portion 27a made of a conductive material is formed on the insulating film 9. One end of the conductive portion 27a is connected to the additional capacitance electrode 1.
It is provided so as to overlap with a part of 5. Further, a picture element electrode portion constituting the additional capacitance region 25a is superimposed on the end portion. A picture element electrode portion constituting the non-additional capacitance region 24a is superimposed on the other end of the conductive portion 27a. Since the conductive portion 27a is made of a conductive material, the additional capacitance region 25a and the non-additional capacitance region 24a are electrically connected.

In this embodiment, a conductive film 29 is further provided to bridge the non-additional capacitance region 24a and the non-additional capacitance region 24b.

FIG. 3 shows a cross-sectional configuration near the conductive film 29 taken along line 1--2 in FIG. The conductive film 29 is formed on the glass substrate 6 at the same time as the gate pass line 4 and the additional capacitance electrode 15. A gate insulating film 9, which is formed over the entire surface of the substrate 6, is deposited on the conductive film 29. Further, above the center of the conductive film 29, the aforementioned source wiring 5a is formed.

Above both ends of the conductive film 29, picture element electrode portions constituting non-additional capacitance regions 24a and 24b are overlapped. Non-additional capacity area 24a.

24b and the conductive film 29 are insulated by the gate insulating film 9. Therefore, the electrode portions 23a and 23b are driven by the TFTs 3a and 3b, respectively.

Additional capacitance region 25a of electrode portion 23a and additional capacitance electrode 1
5, and a pixel defect occurs, cut the conductive portion 27a between the additional capacitance region 25a and the non-additional capacitance region 24a with a laser trimmer, ultrasonic cutter, etc. Separate these areas. Thereby, the function as a picture element electrode is ensured by the non-additional capacitance region 24a, which is not opposed to the addition-capacitance electrode 15 and therefore has no problem of poor insulation between it and the electrode 15.

However, since no additional capacitance is formed in the electrode portion 23a from which the additional capacitance region 25a is separated, charge retention may be insufficient compared to other normal electrode portions, which may cause display unevenness. be.

In such a case, the non-additional capacitance regions 24a and 24b are electrically connected via the conductive film 29.

This connection is made by irradiating optical energy using a laser trimmer or the like to an overlapping portion 29a between the non-additional capacitance region 24a and the conductive film 29, and an overlapping portion 29b between the non-additional capacitance region 24b and the conductive film 29. . The gate insulating film 9 is destroyed by the laser beam irradiation, and the non-additional capacitance region 24a and the conductive film 29 are electrically connected, and the non-additional capacitance region 24b and the conductive film 29 are electrically connected.

In the picture element modified as described above, the function as a picture element electrode is ensured by the two non-additional capacitance regions 24a and 24b and the addition capacitance region 25b.

Further, since an additional capacitor is formed between the additional capacitor region 25b and the additional capacitor electrode 15, display unevenness does not occur.

Additional capacitance region 25b of electrode portion 23b and additional capacitance electrode 1
Even in the case where an insulation failure occurs between the pixel 5 and the pixel defect, the pixel defect can be corrected in the same manner as described above. In this case, two non-additional capacitance areas 24n and 24b
The function as a picture element electrode is ensured by the additional capacitance region 25a.

As described above, according to this embodiment, the portion with poor insulation can be removed easily and in a short time while maintaining the function of providing additional capacitance.

In this embodiment, pixel defects caused by defective TFTs can also be corrected. If the TFT 3a is defective, the electrode section 23
a becomes malfunctioning. In this case, do the same as above,
Electrode portions 23a and 23b are connected via conductive film 29. Furthermore, by cutting the drain electrode 14a as necessary, the TFT 3a is separated. With this modification, the two electrode parts 23a and 23b are driven by one TFTab, and the function as a picture element electrode is ensured.

Even if TFT3b is defective, it can be corrected in the same manner. In this case, two electrode parts 23a and 23
b is driven by one TFT 3a, ensuring its function as a picture element electrode.

According to this embodiment, even if a pixel defect occurs due to TPT failure, the defect can be easily corrected.

FIG. 4 shows another embodiment of the active matrix substrate 2 of the present invention. In this embodiment as well, the picture element electrode 23 is divided into two electrode parts 23a and 23b, and the electrode part 2
3a is a non-additional capacity area 24a and an addition capacity area 25a.
It is divided into.

Similarly, the electrode portion 23b is divided into a non-additional capacitance region 24b and an additional capacitance region 25b. Further, the additional capacitance region 25a is divided into additional capacitance sections 26a and 26b. Similarly, the additional capacitance region 25b is divided into additional capacitance sections 26c and 26d. Additional capacitance parts 26a and 26b
A conductive portion 27a127b is provided between the conductive portion 27a and the non-additional capacitance region 24a. Similarly, conductive portions 27c and 27d are provided between the additional capacitance portions 26C and 26d and the non-additional capacitance region 24b, respectively. These four conductive parts 27a, 27b, 27c, and 27d
The cross-sectional configuration is similar to that shown in FIG.

If an insulation failure occurs between one of the additional capacitance portions 26a of the electrode portion 23a and the additional capacitance electrode 15, the conductive portion 2 between the additional capacitance portion 26a and the non-additional capacitance region 24a
7a is cut with a laser trimmer, an ultrasonic cutter, etc. to separate them. Thereby, the non-additional capacitance region 24a and the other addition capacitance section 26b function as the electrode section 23a.

In this embodiment, the non-additional capacitance region 24a and the other addition capacitance section 26b can remain connected, so that charges are retained and display unevenness does not occur. Additional capacitance section 2
If an insulation failure occurs between the electrode 6b and the additional capacitance electrode 15, the conductive portion 27b is cut off, and the electrode portion 23a is formed by the non-added capacitance region 24a and the additional capacitance portion 26a.

Even if an insulation failure occurs between the additional capacitance portion 27c or 27d of the electrode portion 23b and the additional capacitance electrode 15, cutting the conductive film 27c or 27d can
The defect can be corrected in the same manner as described above.

Furthermore, in this embodiment, two additional capacitance sections 25a, 2
6b has poor insulation with the additional capacitance electrode 15,
Even if a pixel defect occurs, the pixel defect can be corrected. In this case, the conductive portions 27a and 27b are cut using a laser trimmer or the like. Then, as in the previous embodiment, the overlapping portions 29a and 29b of the conductive film 29 are irradiated with laser light to electrically connect the non-additional capacitance regions 24a and 24b via the conductive film 29. Due to the modification, the non-additional capacitance areas 24a, 24bs and the addition capacitance section 2
6c and 26d maintain the function of the picture element electrode. Moreover, the additional capacitance parts 26c and 26d and the additional capacitance electrode 15
Since an additional capacitance is formed between the two, charge is retained and display unevenness does not occur.

Similarly, even if the two additional capacitance sections 26c and 26d simultaneously have poor insulation with the additional capacitance electrode 15 and a pixel defect occurs, the pixel defect can be corrected.

In this case, the function of the picture element electrode is maintained by the non-additional capacitance regions 24a, 24b and the addition capacitance portions 26a, 26b.

In this embodiment, as in the embodiment shown in FIG. 1, picture element defects due to defects in the TPT 3a can be corrected. In this case, in the same manner as described above, the electrode portion 23a is inserted through the conductive film 29.
and 23b are connected.

Furthermore, by cutting the drain electrode 14a as necessary, the TPT 3a is separated. By such modification, the two electrode parts 23a and 23b can be combined into one TF.
It is driven by Tab, and its function as a picture element electrode is ensured. Even if TFTab is defective, it can be corrected in the same manner.

FIG. 5 shows an active matrix display device manufactured using the active matrix substrate l of the embodiment shown in FIG.
FIG. 2 is a sectional view taken along the line ■-■ in FIG. 1;

A protective film 43 made of 5iNX or the like is formed on the entire surface of the active matrix substrate l, and an alignment film 44 is further formed on the protective film 43.
is formed.

In a counter substrate 50 facing the active matrix substrate 1, a color filter 48 is formed on an insulating substrate 53, and further a counter electrode 46 and an alignment film 45 are formed. A liquid crystal 49 is sealed as a display medium between the active matrix substrate 1 and the counter substrate 50 to constitute an active matrix display device.

In the active matrix display device of this embodiment, since either one of the two insulating substrates 6 and 53 can be a translucent substrate, the position of pixel defects can be determined while operating as a display device. Once identified, pixel defects can be corrected while the display device is still in use. The pixel defect is in the electrode part 2.
If the problem is caused by poor insulation between the additional capacitance region 25a and the additional capacitance electrode 15, laser light or the like is transmitted from the outside of the display device through the transparent substrate to the arrow 52 in FIG. It irradiates the position shown by and cuts the conductive portion 27a.

Further, the overlapping portions 29a and 29b of the conductive film 29 are irradiated with laser light to electrically connect the non-additional capacitance regions 24a and 24b. In this way, the additional capacitance region 25a is separated from the non-additional capacitance region 24a by external laser light irradiation, and the electrode portions 23a and 23 are separated by external laser light irradiation.
By connecting the display device to the display device b, pixel defects can be corrected in the display device itself. Furthermore, display unevenness does not occur.

Even if a pixel defect is caused by a defect in the TFT 3a, the defect can be corrected from outside the display device. In this case, the overlapping portions 29a and 29b of the conductive film 29 are irradiated with laser light through the transparent substrate in the same manner as described above. The electrode parts 23a and 23b are connected via the conductive film 29 by laser light irradiation. Furthermore, by cutting the drain electrode 14a as necessary, the TFT 3
a is separated. With this modification, the two electrode parts 23a and 23b are driven by one TFT 3b and function as a picture element electrode.

The above-mentioned cutting of the conductive portion or connection between the conductive film and the electrode portion is performed on the glass substrate 6 separated from the liquid crystal 49 which is the display medium.
Since this is carried out between the conductive portion and the protective film 43, the material constituting the conductive portion or conductive film that is evaporated or melted by the laser beam irradiation does not mix into the liquid crystal 49. Therefore, the image quality of the display device does not deteriorate. In this manner, in the active matrix display device of the present invention, pixel defects can be corrected while the display device is in use.

Further, although a detailed explanation will be omitted, a display device capable of correcting pixel defects similar to that of this embodiment can be obtained even by using the active matrix substrate 2 of FIG. 4.

In each of the above embodiments, an active matrix substrate having a TPT which is a three-terminal element has been described, but the present invention can also be applied to an active matrix substrate having a two-terminal element such as an MIM. Furthermore, although the above embodiments have described a display device using a liquid crystal, the present invention can also be applied to various display devices using a thin film light emitting layer, a dispersed EL light emitting layer, a plasma light emitter, etc. as a display medium.

(Effects of the Invention) In the active matrix substrate of the present invention, when a pixel defect occurs due to poor insulation between the pixel electrode and the additional capacitance electrode, the pixel defect can be easily and quickly removed. It can be corrected without causing display unevenness. Sui・
7 Even if a pixel defect occurs due to a defective switching element,
Pixel defects can be corrected.

Further, the active matrix display device of the present invention can correct the pixel defects described above while the display device is in a state where the pixel defects can be easily detected optically. Therefore, the inspection process and the repair process can be simplified, contributing to mass production of display devices and cost reduction.

Figure 1 is a plan view of an embodiment of the active matrix substrate of the present invention, Figure 2 is a sectional view taken along line nm in Figure 1,
3 is a sectional view taken along the line mm in FIG. 1, FIG. 4 is a plan view of another embodiment of the active matrix substrate of the present invention, and FIG. 5 is an active matrix substrate using the substrate of FIG. A sectional view taken along the line nm in FIG. 1 of the matrix display device, FIG. 6 is a plan view of an example of a conventional active matrix substrate, and FIG.
The figure is a sectional view taken along the line ■-■ in FIG. 6.

1.2... Active matrix substrate, 3a, 3b.
... TFT, 4... Gate pass line, 5... Source pass line, 5a, 5b... Source arrangement 1.5c.
... Branch line, 6, 53... Glass substrate, 9... Gate insulating film, 14a, 14b... Drain electrode, 15
...Additional capacitance electrode, 23...Picture element electrode, 23a,
23b...electrode portion, 24a, 24b--non-additional capacitance region, 25a.

25 b...Additional capacity area, 26 a, 26
b, 26 c.

26d...Additional capacitance section, 27a, 27b...Conducting section, 29...Conductive film, 29a, 29b...Overlapping section, 4
3... Protective film, 44.45... Alignment film, 46...
Counter electrode, 48... Color filter, 49... Liquid crystal, 50... Counter substrate.

that's all

Claims (1)

[Scope of Claims] 1. A picture element electrode arranged in a matrix on an insulating substrate and divided into a plurality of electrode parts, an additional capacitance electrode provided below the picture element electrode, and the electrode part close to each of the
A plurality of parallel signal wirings electrically connected to each other,
The additional capacitance electrode is located below each of the electrode portions, and each of the electrode portions is divided into an additional capacitance region and a non-additional capacitance region facing the additional capacitance electrode. , a conductive portion electrically connecting the additional capacitance region and the non-additional capacitance region, and a conductive portion provided in each of the non-additional capacitance region,
a switching element connected to the adjacent signal wiring;
An active matrix substrate comprising a conductive film that bridges the non-additional capacitance regions adjacent to each other and overlaps a portion of each of the non-additional capacitance regions with an insulating film interposed therebetween in a non-conducting state. 2. A pair of insulating substrates, at least one of which is translucent, a display medium inserted between the substrates and whose optical characteristics are modulated in response to an applied voltage, and an inner surface of one of the pair of substrates. A picture element electrode arranged in a matrix and divided into a plurality of electrode sections, an additional capacitance electrode provided below the picture element electrode, and an electrode arranged in close proximity to each of the electrode sections and electrically connected to each other. and a plurality of parallel signal wirings, the additional capacitance electrode is located below each of the electrode portions, and each of the electrode portions faces the additional capacitance electrode. and a non-additional capacitance region, a conductive portion electrically connecting the addition capacitance region and the non-additional capacitance region, and a conductive portion provided in each of the non-additional capacitance region and connected to the adjacent signal wiring. and a conductive film that bridges the non-additional capacitance regions adjacent to each other and is weighted in a non-conducting state with a part of each of the non-additional capacitance regions via an insulating film, the conduction portion and a protective film formed above the conductive film.