JPH0228919A - Formation of resist film - Google Patents
Formation of resist filmInfo
- Publication number
- JPH0228919A JPH0228919A JP63178078A JP17807888A JPH0228919A JP H0228919 A JPH0228919 A JP H0228919A JP 63178078 A JP63178078 A JP 63178078A JP 17807888 A JP17807888 A JP 17807888A JP H0228919 A JPH0228919 A JP H0228919A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- resist film
- resist
- resin
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明′は、半導体装置製造におけるフォトリンゲラフ
ィブロセスでのレジスト膜の形成方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention' relates to a method for forming a resist film in a photo Ringer fibrosis process in semiconductor device manufacturing.
(従来の技術)
従来、半導体装置製造におけるフォトリソグラフィ工程
で、半導体基板表面へのレジスト塗布方法としては、一
般にスピンナ法と呼ばれる回転塗布方法が多く用いられ
ている。第3図に基づいてスピンナ法について簡単に説
明する。同図において、11は半導体基板、12は真空
チャック、13はレジスト14を滴下するための滴下ノ
ズルである。まず、半導体基板11を真空チャック12
上に真空吸着して固定し1滴下ノズル13から半導体基
板11の表面にレジスト14を数滴滴下して、モータに
より真空チャック12の軸を回転させる。すると、半導
体基板11は回転し、遠心力により非常に薄いレジスト
膜が形成される。レジスト膜の厚さはレジストの粘度2
回転速度によって決定される。形成されるレジスト膜の
膜厚、均一性は、フォトリソグラフィによる微細パター
ン形成の解像力に大きく影響する。(Prior Art) Conventionally, in the photolithography process in the manufacture of semiconductor devices, a spin coating method generally called a spinner method is often used as a method for coating a resist onto the surface of a semiconductor substrate. The spinner method will be briefly explained based on FIG. In the figure, 11 is a semiconductor substrate, 12 is a vacuum chuck, and 13 is a dropping nozzle for dropping resist 14. First, the semiconductor substrate 11 is placed on the vacuum chuck 12.
A few drops of resist 14 are dropped onto the surface of the semiconductor substrate 11 from a one-drop nozzle 13, and the shaft of the vacuum chuck 12 is rotated by a motor. Then, the semiconductor substrate 11 rotates, and a very thin resist film is formed by centrifugal force. The thickness of the resist film is determined by the resist viscosity 2
Determined by rotation speed. The thickness and uniformity of the formed resist film greatly affect the resolution of fine pattern formation by photolithography.
(発明が解決しようとする課題)
上記、スピンナ法において、完全均一な膜厚が得られる
ものではない。特に、化合物半導体を材料とする素子の
作製には長方形の基板を用いることが多く、長方形基板
にスピンナ法でレジスト塗布を行なうと、円形基板には
みられない長方形基板特有のレジスト膜の膜厚分布を生
ずる。その様子を第4図に示す。第4図(a)に示すよ
うに、長方形基板11の格子状を施した部分でレジスト
膜14bが厚くなる。第4図(b)には(a)図の対角
線ACの断面でのレジスト膜厚分布を示す。14bはレ
ジスト膜の厚い部分を示す、このようなレジスト膜の膜
厚分布は、微細パターンを形成するため、露光量をレジ
ストの感度限界付近まで落とした場合、パターン不良を
引き起こす。すなわち、レジスト膜の厚い部分では、感
光して現像除去されるべきパターンのレジスト膜が完全
に除去されないためにパターン不良が生ずるわけで、こ
のレジスト膜の膜厚分布は、基板全面に微細なパターン
を形成する・上で非常な欠点となる。(Problems to be Solved by the Invention) In the spinner method described above, a completely uniform film thickness cannot be obtained. In particular, rectangular substrates are often used to fabricate devices made from compound semiconductor materials, and when resist is applied to a rectangular substrate using a spinner method, the thickness of the resist film, which is unique to rectangular substrates and cannot be seen on circular substrates, increases. give rise to a distribution. The situation is shown in Figure 4. As shown in FIG. 4(a), the resist film 14b becomes thicker in the lattice-shaped portions of the rectangular substrate 11. FIG. 4(b) shows the resist film thickness distribution in a cross section taken along the diagonal line AC in FIG. 4(a). Reference numeral 14b indicates a thick portion of the resist film. Since such a film thickness distribution of the resist film forms a fine pattern, if the exposure amount is reduced to near the sensitivity limit of the resist, pattern defects will occur. In other words, in thick parts of the resist film, pattern defects occur because the resist film of the pattern that should be exposed to light and removed by development is not completely removed. This is a major drawback in forming and above.
本発明の目的は、従来の欠点を解消し、長方形基板への
均一なレジスト膜を形成する方法を提供することである
。An object of the present invention is to eliminate the conventional drawbacks and provide a method for forming a uniform resist film on a rectangular substrate.
(課題を解決するための手段)
本発明のレジスト膜の形成方法は、半導体基板より面積
の大きい基板設置板に、半導体基板を設置する工程と、
半導体基板の周辺を樹脂で囲む工程と、基板設置板を回
転軸に固定し、半導体基板上にレジストを滴下して回転
軸を回転する工程とを備えたものである。(Means for Solving the Problems) The method for forming a resist film of the present invention includes the steps of: installing a semiconductor substrate on a substrate installation plate having a larger area than the semiconductor substrate;
This method includes a step of surrounding the semiconductor substrate with resin, and a step of fixing a substrate mounting plate to a rotating shaft, dropping resist onto the semiconductor substrate, and rotating the rotating shaft.
(作 用)
本発明を長方形基板へのレジスト膜形成に適用すること
により、回転塗布方法で長方形基板に生ずるコーナー付
近でのレジスト膜の厚い部分は解消され、均一なレジス
ト膜を形成することができる。すなわち、基板の周辺を
樹脂で囲み、長方形基板のコーナー形状を実効的に消失
させているので、長方形特有のレジスト膜厚の分布は解
消され。(Function) By applying the present invention to the formation of a resist film on a rectangular substrate, the thick portions of the resist film near the corners that occur on the rectangular substrate by the spin coating method are eliminated, and a uniform resist film can be formed. can. In other words, since the periphery of the substrate is surrounded by resin, effectively eliminating the corner shape of a rectangular substrate, the resist film thickness distribution peculiar to a rectangular shape is eliminated.
均一なレジスト膜を形成することができる。A uniform resist film can be formed.
(実施例)
本発明の一実施例を第1図および第2図に基づいて説明
する。第1図は1本発明の基板設置工程を示す。図にお
いて、1は長方形状の化合物半導体基板、2は半導体基
板1より面積の大きな基板設置板、3はレジストを滴下
するための滴下ノズル、4はモータと連結して回転する
回転軸、5は熱により熔解する樹脂(例えば、エレクト
ロンワックス)であり、6はレジスト膜である。(Example) An example of the present invention will be described based on FIGS. 1 and 2. FIG. 1 shows a substrate installation process according to the present invention. In the figure, 1 is a rectangular compound semiconductor substrate, 2 is a substrate installation plate with a larger area than the semiconductor substrate 1, 3 is a dropping nozzle for dropping resist, 4 is a rotating shaft connected to a motor, and 5 is a rotating shaft. It is a resin that melts with heat (for example, electron wax), and 6 is a resist film.
まず、第1図(a)に示すように、基板設置板2を加熱
し、樹脂5を基板設置板・2上で溶かす。次に、基板設
置板2上に半導体基板1を置いて一定時間加熱後、冷却
していくと、第1”図(b)、(c)に示すように、半
導体基板1の周辺に固化した樹脂5が形成される。上記
のように、半導体基板1を設置した基板設置板2を、第
2図に示すように回転軸4に固定し、滴下ノズル3から
レジスト7を滴下して回転軸4を回転すると、レジスト
膜6が形成される。このように、半導体基板1の周辺を
樹脂5で囲むことにより、半導体基板1が長方形の場合
でも、コーナーの形状は実効的になくなる。したがって
、長方形基板にスピンナ法でレジスト膜を形成するとき
に生ずる特有のレジスト膜厚分布は解消され、第2図に
示すように、半導体基板14上に均一なレジスト膜6を
形成することができる。First, as shown in FIG. 1(a), the substrate installation plate 2 is heated to melt the resin 5 on the substrate installation plate 2. Next, when the semiconductor substrate 1 is placed on the substrate mounting plate 2, heated for a certain period of time, and then cooled, solidified particles are formed around the semiconductor substrate 1, as shown in FIG. The resin 5 is formed.As described above, the substrate setting plate 2 on which the semiconductor substrate 1 is placed is fixed to the rotating shaft 4 as shown in FIG. 4, a resist film 6 is formed. By surrounding the semiconductor substrate 1 with the resin 5 in this way, even if the semiconductor substrate 1 is rectangular, the shape of the corner is effectively eliminated. Therefore, The peculiar resist film thickness distribution that occurs when a resist film is formed on a rectangular substrate by the spinner method is eliminated, and a uniform resist film 6 can be formed on the semiconductor substrate 14 as shown in FIG.
(発明の効果)
本発明によれば、スピンナ法を用いて長方形の基板にも
均一なレジスト膜を形成することができ、その実用上の
効果は大である。(Effects of the Invention) According to the present invention, a uniform resist film can be formed even on a rectangular substrate using the spinner method, and its practical effects are great.
第1図は本発明の一実施例における基板設置工程図で、
(a)は設置板断面図、(b)は半導体基板設置後の平
面図、(c)は(b)のA−B線断面図、第2図は本発
明のレジスト膜形成工程図、第3図は従来のスピンナ法
を示す概略図、第4図はスピンナ法で長方形基板にレジ
スト塗布を行なった場合の平面図(a)および断面図(
b)である。
1・・・半導体基板、 2・・・基板設置板、 3・・
・滴下ノズル、 4・・・回転軸、 5・・・樹脂。
6・・・レジスト膜、 7・・・レジスト。
特許出願人 松下電器産業株式会社
第
図
第
図
ら
纏−14
き
第
図
第
図
11長乃形+導体基板FIG. 1 is a board installation process diagram in an embodiment of the present invention.
(a) is a sectional view of the installation board, (b) is a plan view after the semiconductor substrate is installed, (c) is a sectional view taken along the line A-B of (b), and FIG. 2 is a resist film forming process diagram of the present invention. Figure 3 is a schematic diagram showing the conventional spinner method, and Figure 4 is a plan view (a) and a cross-sectional view (a) of resist coating on a rectangular substrate using the spinner method.
b). 1... Semiconductor substrate, 2... Board installation plate, 3...
・Dripping nozzle, 4... Rotating shaft, 5... Resin. 6...Resist film, 7...Resist. Patent applicant: Matsushita Electric Industrial Co., Ltd.
Claims (1)
基板を設置する工程と、前記半導体基板の周辺を樹脂で
囲む工程と、前記基板設置板を回転軸に固定し、前記半
導体基板上にレジストを滴下して回転軸を回転する工程
とを備えたことを特徴とするレジスト膜の形成方法。A step of installing the semiconductor substrate on a substrate installation plate having a larger area than the semiconductor substrate, a step of surrounding the periphery of the semiconductor substrate with resin, fixing the substrate installation plate to a rotating shaft, and applying a resist on the semiconductor substrate. 1. A method for forming a resist film, comprising a step of dropping the resist film and rotating a rotating shaft.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63178078A JPH0228919A (en) | 1988-07-19 | 1988-07-19 | Formation of resist film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63178078A JPH0228919A (en) | 1988-07-19 | 1988-07-19 | Formation of resist film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0228919A true JPH0228919A (en) | 1990-01-31 |
Family
ID=16042239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63178078A Pending JPH0228919A (en) | 1988-07-19 | 1988-07-19 | Formation of resist film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0228919A (en) |
-
1988
- 1988-07-19 JP JP63178078A patent/JPH0228919A/en active Pending
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