JPH0228947A - Semiconductor testing circuit - Google Patents

Semiconductor testing circuit

Info

Publication number
JPH0228947A
JPH0228947A JP63179929A JP17992988A JPH0228947A JP H0228947 A JPH0228947 A JP H0228947A JP 63179929 A JP63179929 A JP 63179929A JP 17992988 A JP17992988 A JP 17992988A JP H0228947 A JPH0228947 A JP H0228947A
Authority
JP
Japan
Prior art keywords
nonvolatile memory
product
inspection
defective
tests
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63179929A
Other languages
Japanese (ja)
Inventor
Masaki Suzuki
正樹 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP63179929A priority Critical patent/JPH0228947A/en
Publication of JPH0228947A publication Critical patent/JPH0228947A/en
Pending legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

PURPOSE:To make it possible to decrease the mixing rate of defective products by providing a nonvolatile memory in a semiconductor chip, storing the result of inspection, and performing the inspection for reading the contents of the nonvolatile memory in the second inspection. CONSTITUTION:A nonvolatile part 2 is provided at a part of a semiconductor chip 1 in addition to a main function circuit 5. Terminals 3 for the nonvolatile memory are arranged. The nonvolatile memory terminals 3 are made to extend from a package 6. when tests A for all inspections are finished for the main function and it is judged that the product is good, a '1' is written in the nonvolatile memory through the nonvolatile memory part 3 with a measuring instrument (referred to B hereinafter). When writing of B is finished, tests C are performed as the reading inspection of the nonvolatile memory part. When the '1' is read out, it is judged that the product is good. When 'Q' is read, the nonvolatile memory part may be defective. Therefore, the tests A are conducted again. When the tests are successful, the product is judged as good. Only when it is judged that the product is defective in the tests A, the product is rejected as the defective product or the defect mark is printed.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、不良混入を防止する為に、検査結果を記憶
できる不揮発性メモリを設けた半導体試験回路に関する
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor test circuit provided with a non-volatile memory capable of storing test results in order to prevent the introduction of defects.

〔発明の概要〕[Summary of the invention]

この発明は、半導体集積回路の検査において、半導体チ
ップの一部分に、検査結果記憶を目的とした不揮発性メ
モリを設け、前記不揮発性メモリに検査結果を書き込み
、再検査時に前記不揮発性メモリの内容を読み出す検査
を行ない、不良混入を防止するようにしたものである。
In testing a semiconductor integrated circuit, the present invention provides a non-volatile memory in a part of the semiconductor chip for the purpose of storing test results, writes the test results into the non-volatile memory, and stores the contents of the non-volatile memory at the time of re-testing. A reading test is performed to prevent defects from being mixed in.

〔従来の技術〕[Conventional technology]

従来、不良混入防止のために検査結果記憶用不揮発性メ
モリを設けた半導体集積回路はなかった。
Conventionally, there has been no semiconductor integrated circuit provided with a nonvolatile memory for storing test results in order to prevent defective contamination.

したがって再検査時には時間をかけて全数検査を行なう
か、またはロットごとに母体からサンプルを抜き出し、
前記サンプルの結果で前記母体を保障する検査方法であ
った。
Therefore, when re-inspecting, we either take the time to conduct a complete inspection, or we take samples from the mother's body for each lot.
This was a testing method that guaranteed the mother's body based on the sample results.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来の技術では、再検査時に時間をかけて全数検査した
場合、コストが高くなり、また母体からサンプルを抜き
取り検査する方法では、サンプルを抜き出した後の母体
に不良品が存在する可能性があるという欠点があった。
With conventional technology, if re-inspection takes a long time to fully inspect, the cost will be high, and with the method of sampling samples from the base for inspection, there is a possibility that defective products may be present in the base after the sample is taken out. There was a drawback.

また、検査行程を進む際に人為的ミスにより不良品が混
入してしまう場合もある。
In addition, defective products may be mixed in due to human error during the inspection process.

〔課題を解決するための手段〕[Means to solve the problem]

上記課題を解決するために、この発明は検査結果を記憶
できる不揮発性メモリを設けた半導体集積回路において
、検査時に検査結果を前記不揮発性メモリに記憶し、再
検査時に前記不揮発性メモリの内容を検査することによ
り、検査時間をかけずに全数検査をできるようにした。
In order to solve the above problems, the present invention provides a semiconductor integrated circuit equipped with a non-volatile memory capable of storing test results. By testing, we have made it possible to perform a complete inspection without spending much time on inspection.

〔作用〕[Effect]

上記のように、通常の検査後、再度不揮発性メモリ部の
検査をすることにより全数の良品を確認の上、出荷でき
るので、不良混入率を下げることができる。
As described above, by inspecting the nonvolatile memory section again after the normal inspection, it is possible to confirm that all the products are non-defective before shipping, thereby reducing the rate of defective products.

〔実施例〕〔Example〕

第1図において、半導体チップ1の一部に主機能回路部
5とは別に、不揮発性メモリ部2を設け、不揮発性メモ
リ用端子3を配置する。
In FIG. 1, a nonvolatile memory section 2 is provided in a part of a semiconductor chip 1 separately from a main functional circuit section 5, and nonvolatile memory terminals 3 are arranged.

また第2図において、パッケージ6に、不揮発性メモリ
用端子3を出す。
Further, in FIG. 2, the nonvolatile memory terminal 3 is exposed to the package 6.

第3図は、本発明による検査の内容を表すフロチャート
である。主機能に全検査の■テストが終了し、良品と判
断されると、測定器より不揮発性メモリ用端子3を通し
て、不揮発性メモリに“1″が書き込まれる(以下■の
書き込みという)、ここで−度目の検査が終了となる。
FIG. 3 is a flowchart showing the details of the inspection according to the present invention. When all the main functions have been tested and the product is determined to be non-defective, "1" is written into the non-volatile memory from the measuring device through the non-volatile memory terminal 3 (hereinafter referred to as "writing ■"). -The second inspection is completed.

■の書き込みが終了すると、不揮発性メモリ部の読み出
し検査としての0テストを行ない、′1”が読み出され
た場合は良品と判断される。“Q″が読み出された場合
は不揮発性メモリ部の不良もあり得るので、もう−度の
テストを行ない、合格すると良品とする。■デス5時に
不良品と判断された時のみ、不良として除外または不良
のマーキングがされる。
When the writing of ■ is completed, a 0 test is performed as a read inspection of the non-volatile memory section, and if '1' is read out, it is judged as a good product. If 'Q' is read out, the non-volatile memory Since there may be a defective part, the product is tested again, and if it passes, it is considered good. ■Only when the product is determined to be defective at the time of death, it is excluded as defective or marked as defective.

なおPASSはA及びCテストで合格と判定された場合
で、FAILは、不合格と判定された場合である。
Note that PASS is a case where the A and C tests are judged to have passed, and FAIL is a case where it is judged to be a failure.

〔発明の効果〕〔Effect of the invention〕

以上説明したようにこの発明は、検査結果を記憶し、再
検査時に不揮発性メモリの内容を読み出す検査を行なう
ことにより、不良混入率を下げる効果がある。
As explained above, the present invention has the effect of reducing the defect rate by storing the test results and performing a test in which the contents of the non-volatile memory are read out at the time of re-test.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、この発明にかかる不揮発性メモリを設けた半
導体チップの正面図、第2図は、半導体チップをパッケ
ージ状態にした時の正面図、第3図は検査内容を表すフ
ローチャートである。 半導体チップ 不揮発性メモリ部 不揮発性メモリ用端子 主機能用端子 主機能回路部 パッケージ 第1図 第2図 以上 出願人 セイコー電子工業株式会社 代理人 弁理士  林   敬 之 助検4に円容ρフ
ロー寸?−) 第3図
FIG. 1 is a front view of a semiconductor chip provided with a nonvolatile memory according to the present invention, FIG. 2 is a front view of the semiconductor chip in a packaged state, and FIG. 3 is a flowchart showing inspection details. Semiconductor chip Non-volatile memory part Non-volatile memory terminals Main function terminals Main function circuit part package ? -) Figure 3

Claims (2)

【特許請求の範囲】[Claims] (1)半導体チップ内に、不揮発性メモリを設け、前記
不揮発性メモリに検査結果を記憶し、再検査において、
前記不揮発性メモリの内容を読み出す検査を行なうこと
を特徴とした半導体試験回路。
(1) A non-volatile memory is provided in the semiconductor chip, the test results are stored in the non-volatile memory, and during re-testing,
A semiconductor test circuit characterized in that a test is performed by reading out the contents of the nonvolatile memory.
(2)前記不揮発性メモリの入出力をパッケージにも設
けた特許請求第1項記載の半導体試験回路。
(2) The semiconductor test circuit according to claim 1, wherein the input/output of the nonvolatile memory is also provided in a package.
JP63179929A 1988-07-19 1988-07-19 Semiconductor testing circuit Pending JPH0228947A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63179929A JPH0228947A (en) 1988-07-19 1988-07-19 Semiconductor testing circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63179929A JPH0228947A (en) 1988-07-19 1988-07-19 Semiconductor testing circuit

Publications (1)

Publication Number Publication Date
JPH0228947A true JPH0228947A (en) 1990-01-31

Family

ID=16074396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63179929A Pending JPH0228947A (en) 1988-07-19 1988-07-19 Semiconductor testing circuit

Country Status (1)

Country Link
JP (1) JPH0228947A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05243359A (en) * 1990-04-16 1993-09-21 Natl Semiconductor Corp <Ns> Ferroelectric capacitor test structure for chip die
JPH1131399A (en) * 1997-07-02 1999-02-02 Internatl Business Mach Corp <Ibm> Built-in self-test device provided with memory
JP2000515662A (en) * 1996-08-07 2000-11-21 マイクロン、テクノロジー、インコーポレーテッド System for optimizing test and repair times of defective integrated circuits

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05243359A (en) * 1990-04-16 1993-09-21 Natl Semiconductor Corp <Ns> Ferroelectric capacitor test structure for chip die
JP2000515662A (en) * 1996-08-07 2000-11-21 マイクロン、テクノロジー、インコーポレーテッド System for optimizing test and repair times of defective integrated circuits
JPH1131399A (en) * 1997-07-02 1999-02-02 Internatl Business Mach Corp <Ibm> Built-in self-test device provided with memory

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