JPH02290072A - Manufacture of information processor - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing an information processing device, and particularly to a method for manufacturing an information processing device including a photoelectric conversion section.

A solid-state information processing device equipped with a photoelectric conversion device is
Television imaging equipment, facsimiles and digital copiers (DC
It can be applied to human-powered devices such as (abbreviated as), or other devices for reading characters and images, and has recently made remarkable progress in its development.

Such an information processing device includes a pixel group having a photoelectric conversion function and a circuit having a scanning function for extracting electrical signals outputted from the pixel group in a time-series manner. Diode and MOS-FET (Fief
ld Effeet Transiston) (MOS
CCD (Charge Coupled Type) as a component/element, or CCD (Charge Coupled
Devtce) and BBD (Bucket Bri
Gade Derjce), that is, the so-called CTD (Ch.
There are various methods, such as those that include large Transfer Devices as components/elements.

However, whether these are MOS type or CTD,
Since a SiJL crystal (abbreviated as C-Si) wafer substrate is used, the area of the light receiving surface of the photoelectric conversion section is limited by the size of the C-Si wafer substrate. In other words, at present, if uniformity in the entire area is included, at most
Since C-Si wafer substrates with a size of approximately the same size as the nch angle can only be manufactured, it is difficult to manufacture MOS types that use such C-SL wafer substrates or information processing devices that have CTDs as their constituent elements. However, its light-receiving surface cannot exceed the size of the aforementioned C-Si wafer substrate.

Therefore, in an information processing device having a photoelectric conversion unit whose light-receiving surface has such a limited and small area, for example, when applied as a DC input device, an optical system with a large reduction magnification is used to separate the original to be copied and the light-receiving surface. It is necessary to form an optical image of the document on the light-receiving surface via the optical system.

In such a case, there are technical limits to increasing the resolution, as described below.

That is, the resolution of the photoelectric conversion unit, for example, 10 mm/mm
, the light-receiving area is 10 cm2, and when attempting to copy an A4-sized original, the optical image of the original formed on the light-receiving surface is reduced to about 1/60, and the photoelectric conversion section is substantially smaller than that of the A4-sized original. The resolution drops to about 108 lines/mm. As described above, the actual resolution decreases at the ratio of (size of light-receiving surface)/(size of original) as the size of the original to be copied becomes larger.

Therefore, in order to solve this problem, manufacturing technology that increases the resolution of the photoelectric conversion part is required in such a system, but it is difficult to obtain the required resolution in a small and limited area as mentioned above. However, such manufacturing techniques have their own limitations, although they must be manufactured with extremely high integration density and with no defects in the components.

On the other hand, a plurality of photoelectric conversion sections are arranged so that the total light-receiving area is 1:1 with the area of the maximum document size that can be copied, and the optical image of the document to be imaged is divided into the number of photoelectric conversion sections. A method has been proposed that attempts to avoid a substantial drop in resolution.

However, even in such a method, there are disadvantages as described below. That is, when a plurality of photoelectric conversion parts are arranged, a boundary area where no light receiving surface exists is inevitably created between each photoelectric conversion part, and when viewed as a whole, the light receiving surface is no longer continuous.
The formed optical image of the original is divided, and the portion corresponding to the boundary area is not manually applied to the photoelectric conversion unit, and the copied image has white spots in a grid pattern or areas with white spots in a grid pattern. Corresponding parts are removed and combined to create an incomplete product. In addition, the optical image divided into multiple light-receiving surfaces and formed is an optically reversed image on each light-receiving surface, so the overall image is different from the optically reversed image of the original image. There is. Therefore, if the optical image formed on the light-receiving surface is reproduced as it is, the original original image cannot be reproduced.

As described above, in an information processing device equipped with a conventional photoelectric conversion section, it is extremely difficult to reproduce information with high resolution because the light receiving area is small. Therefore, there is a demand for an information processing device that has a photoelectric conversion section that has a large-area light-receiving surface and excellent resolution. In particular, as applied to facsimiles, DC input devices, or other character or image reading devices, the size of the original must be equal to or equal to the size of the original to be reproduced, or so as to reduce the resolution required for the reproduced image. An information processing device equipped with a photoelectric conversion section having a light receiving area that is not extremely small is essential.

The present invention has been made in view of the above points, and includes:
The purpose is to provide an extremely lightweight information processing device that has a large-area light-receiving surface, has a photoelectric conversion section with high resolution and high sensitivity, and is extremely lightweight.

The information processing device invented by Wood has a group of mxn photoelectric conversion elements.
Each photoelectric conversion element is arranged in a matrix with n rows and n columns, and each photoelectric conversion element has an electrode common to the rows (X electrode), an electrode common to the columns (Y electrode), and a photoelectric conversion layer between these two electrodes. a two-dimensional photoelectric conversion unit; a row selection signal generation unit that selects a row of the two-dimensional photoelectric conversion unit and generates an output signal; a time-series signal converter that manually inputs a group of electrical signals output from each of the photoelectric conversion elements in parallel and outputs them in series; the two-dimensional photoelectric converter, the row selection signal generator, and the time-series signal; The conversion section is solidified, and the two-dimensional photoelectric conversion section and the time-series signal conversion section are separated and formed using thin film technology.

Hereinafter, the present invention will be explained in detail with reference to the drawings.

FIG. 1 is a block diagram for explaining the main components of an information processing apparatus according to the present invention.

Reference numeral 1 denotes a two-dimensional photoelectric conversion unit, which has a configuration in which mXn photoelectric conversion element groups are arranged in a matrix with m rows and n columns. The structure of the photoelectric conversion elements will be described in detail later, but the photoelectric conversion elements form a row with electrodes (Xl. m to do
Electrodes common to photoelectric conversion elements (Y+ .Y2 .Y3
...Y,. , y0).

The photoelectric conversion layer constituting the photoelectric conversion element may be provided independently for each element, or may be provided continuously without being separated for each element, but which type to use depends on the photoelectric conversion. It depends on the materials that make up the layers.

For example, in the case of a photovoltaic type, it is preferable to form each element separately, and in the case of a photoconductive type, it may be separated or continuous.

The light signal may be irradiated directly onto the light receiving surface of the one-dimensional photoelectric conversion section, or may be irradiated so as to form an image on the light receiving surface using a suitable optical system.

Reference numeral 2 denotes a row selection signal generation section that selects a designated electrode from the X electrode group constituting the row of the two-dimensional photoelectric conversion section 1 and generates a signal to be output.
) A signal generating circuit 4 and a switch (SW) circuit 5 are included.

The SW signal generation circuit 4 includes, for example, a shift register (SR
) consists of a ring counter.

The SW circuit 5 is composed of X electrodes, that is, m electronic or mechanical elements having a switching function, and has the function of performing switching operations one after another in accordance with the signals successively generated by the SW signal generation circuit 4. However, for example, when the x1 electrode is selected, the switching element connected to the x1 electrode is activated.

Reference numeral 6 denotes a time-series signal converter, which inputs in parallel electrical signals output row by row in response to the optical signals manually input to the two-dimensional photoelectric converter 1, and converts the transfer signal 7 (shift 1-pulse ) has the function of outputting the same signal 8 in series with the command J;.

That is, by inputting the transfer signal 7 to the time-series signal converter 6, the two-dimensional photoelectric converter 6 is transferred to the time-series signal converter 6.
All signals input in parallel from Il! 13 are output.

On the other hand, when n signals corresponding to the transfer signal 7 are manually inputted to the counter 3, one signal is outputted, and then this signal is manually inputted to the SW signal generation circuit 4, which outputs a two-dimensional signal. A signal for selecting 10 rows of photoelectric conversion units is output, and S
One of the switching element groups constituting the W circuit 5 is operated.

The one-dimensional long photoelectric conversion section 1 in the present invention is divided into two parts from the time-series signal conversion section 6 and is formed using thin film precision technology, so unlike a normal so-called CCD photosensor, it can have a small area. For example, it is possible to make the area as large as the width of an A3 document.

Therefore, it is possible to directly read the document in close contact without using an optical system for reduction, and it is possible to make the document more compact and lightweight. As long as the time-series signal converter 6 has a desired conversion function, contrary to the two-dimensional photoelectric converter 1, it can be formed in as small an area as possible.

Furthermore, the two-dimensional photoelectric conversion section 1 and the time-series signal conversion section 6 may be provided on the same substrate or on separate substrates, but for ease of connection, It is better to have them on the same board. Furthermore, a two-dimensional photoelectric conversion section 1
If both the time-series signal converter 6 and the time-series signal converter 6 are formed of thin films, they can be integrally formed on the same plane, thereby improving mass productivity and performance.

Or, the two-dimensional photoelectric conversion unit 1 is placed on one side of the same substrate,
The time-series signal converter 6 can also be provided on the other side.

In the present invention, the time series signal converter 6 may be, for example, a CCD register (CCDR) or a shift register (SR).
). It is composed of conversion means such as a switching transistor array (STA).

Next, the photoelectric conversion elements constituting the two-dimensional conversion section 1 shown in FIG. 1 will be explained.

2 to 6 are schematic structural sectional views for explaining the basic structure of the photoelectric conversion elements constituting the two-dimensional photoelectric conversion section l.

The photoelectric conversion elements constituting the two-dimensional photoelectric conversion section 1 in the present invention are (A) photovoltaic type (a) pn coupling type (b) Schottky barrier type (B) photoconductive type (c) potdiode Type (d) MonoIlayer type (C) Other types (e) MOS (MetaJ2-Oxi deSemi
conductor) type.

Among these, the ones that are particularly effective in wood inventions are:
This is type (A)-(a) because of the advantages described below.

FIG. 2 is a schematic cross-sectional view showing the basic configuration of the above classification (a).

In the photoelectric conversion element 9 shown in FIG. 2, a photovoltaic layer 11 is provided between a row electrode 10 and a column electrode 12.

In the figure, the photovoltaic layer 11 has a p-type semiconductor layer on the row electrode 10 side and an n-type semiconductor layer on the column electrode side.
Although a junction is formed, it goes without saying that the stacking order of pn may be reversed to that shown in the figure. Moreover, p − nj u n formed in the layer 11
The c t i on may be a homojunction or a heterojunction.

Materials forming homo-juncyton include:
Examples include amorphous silicon (aSi), amorphous germanium (a-Ge), etc., and dimensions commonly made using these materials, such as vacuum evaporation method, glow discharge method, sputtering method, ion The photovoltaic layer 22 is formed by a so-called physical deposition method (PVD) such as a brating method.

To form a hetero-junction, the above-mentioned
The same method as in the case of forming the photovoltaic layer 22 is adopted, but it is preferable to select the p-type material and the n-type material so that the formed photovoltaic layer 22 exhibits desired characteristics.

Examples of p-type materials include Cu2S, Pb
o, Sb2S3, ZncdTe, CdSeo3,a
-Si, etc., and specific examples of n-type materials include DdS, Pbo, Sb2S3, ZnSe, and CdS.
e, In203, Sno2, etc.

The row electrodes 10 and column electrodes 12 are formed of a material that makes ohmic contact with the layer 11. Such materials vary depending on the material forming the layer 11, but for example, p? When forming an n junction, Pt, Ir.
Au, Pd, An. Mo polycrystalline SL (polySt)
Nb, Ta, V. Ti, Cr. Stainless steel etc. are n type a
-An, Mo, polysi as the electrode material on the St layer side
, Nb, Ta. V. TiCr, stainless steel, etc. are used.

Further, when light is irradiated from the row electrode 10 side as shown in the figure, the p-type layer on the light irradiation side is preferably formed thin so that as much of the irradiated light as possible reaches the p-njunction.

Conversely, when light is irradiated from the substrate 13 side, the n-type layer is preferably formed thin for the same reason.

In this case, the column electrodes 12 need to be transparent to the irradiated light.

When the photoelectric conversion element is a photovoltaic type, in addition to the type that forms a p-n junction as described above,
A Schottky barrier is provided between the row electrode 10 or column electrode 12 and the layer 11.
rrier) is also adopted {classification (A) - (b)). In this case, the row electrodes 10 or column electrodes 12 are formed of a material that forms a Schottky barrier with the layer 11. That is, when the layer 11 is made of n-type a-Si, specific examples include Pt, Ir, Au, and Pd.

The photoelectric conversion element 14 shown in FIG. 3 is of a photoconductive type, with column electrodes 17 on a substrate 18, a photoconductive photoelectric conversion layer 16 on the electrodes 17, and row electrodes on the layer 16. 1
It has a structure in which 5 is provided.

The photoelectric conversion layer 16 exhibiting photoconductivity can be formed from many commonly known photoconductive materials, but it needs to be selected from materials to which thin film technology can be applied. Examples of such materials include a-Si. a-Ge, CdS. Se
．． Examples include Se compounds.

Electrode 15 and electrode 17 are formed of a material that makes ohmic contact with layer 16. Examples of such materials include, for example, Pt, IrAuPd. AIl. Mo,PouySi
．． Nb. Ta, V, Ti. Examples include Cr, stainless steel, etc. When formed of n-type a-Si, for example, AflM
Examples include o, polycysi, Nb, Ta, V, Ti, Cr, and stainless steel.

The layer 16 is formed of a p-type or n-type photoconductive material as described above, but it may also have a structure in which p-type and n-type are laminated. (Classification (B) (C)).

Further, when the electrode 15 is irradiated with light from the electrode 15 side, the electrode 15 is separated into two ends of the layer 16, for example, in order to avoid light absorption by the electrode 15 as much as possible, and the irradiated light directly enters the layer 16 near the center. It is a good idea to devise ways to do so.

FIG. 4 is a schematic cross-sectional view showing the basic structure of the splitter (e).

The photoelectric conversion element shown in FIG. 6 has a so-called MOS photosensitive element structure. For example, when the electrode 2o side is n-type as shown in the figure, the photoelectric conversion element 19 converts the light 21
The part where the electric current is incident and the part where the drain electrode 22 (column electrode) is attached are made into a P"" type, and the part where the gate electrode pi24 (row electrode) is attached via the insulating layer 23 is made into an n type. It is formed. Examples of materials for forming the photoelectric conversion element 19 having such a MOS photosensitive element pattern include St. In the figure, the electrode 20 side is shown as n-type, or if the electrode 20 side is p-type, it is shown as P4' in the figure.
However, it is formed so that it becomes n4.

FIG. 5 is a schematic cross-sectional perspective view showing a part of the structure of the two-dimensional photoelectric conversion unit 1 and the time-series signal conversion unit 6 among the main components of the information processing device shown in FIG. . In FIG. 5, a case is shown in which the time-series signal converter 6 is configured with a CCDR. C constituting the time series signal converter 6
For example, the CDR is made of Si02 on a part of the p-type silicon layer 25.
An insulating layer 26 is formed, and n transfer electrodes 27 are provided on the layer 26, which are separated and independently provided. An n4 type silicon layer 28 is formed in the layer 25, and a photoelectric conversion element 29 constituting the two-dimensional photoelectric conversion section 1 is formed on the layer 28.
Column electrodes (y+...Yi.Yj...Y
n) corresponding to each terminal 8i30 are provided. n
electrodes 30 and n column electrodes (Y + ・= Y i
．． Y j - Y n ) are electrically connected one-to-one through conductive wires 31 as shown in the figure. The photoelectric conversion element 29 has column electrodes (y+...Yi.Yj...
・Yn) and row electrodes (X+...Xk, XJ2...Xm
), and the photoelectric conversion layer 32 is, for example, a photovoltaic layer in which a p-n junction is formed. In this case, the row electrodes (Xl-Xk, Xj2-Xm)
It is not necessary to provide the photoelectric conversion layer 2 over the entire surface of the photoelectric conversion layer 32; for example, as shown in the figure, the photoelectric conversion portion Jii
It is sufficient if it is provided on the surface of 32. Therefore, when the row electrodes (X+...Xk.XJ2...Xm) are irradiated with light, the row electrodes (X+...Xk.Xj2...
There is no need to consider the absorption loss of irradiated light due to .
As for Xm), there is an advantage that it is not necessarily necessary to form a material that is transparent to irradiation light.

As described above, when the photoelectric conversion layer 32 is a layer exhibiting photovoltaic force, it is necessary to provide an electrically insulating layer section 33 between each layer to electrically insulate each photoelectric conversion layer 32.

Similar to FIG. 5, FIG. 6 is also a schematic structure showing a part of the structure of the two-dimensional photoelectric conversion unit 1 and the time-series signal conversion unit 6 among the main components of the information processing device shown in FIG. Although it is a cross-sectional perspective view, the wood structure is not different from that in FIG. 5.

The difference between FIG. 6 and FIG. 5 is that in the case of FIG.
R has a storage part and a transfer part formed integrally, whereas the CCDR shown in FIG. 6 has a storage part and a transfer part separated, and each transfer electrode 27 and 1
．． The only difference is that a storage electrode 34 is provided corresponding to 1. The other structures and functions are completely the same as those shown in FIG.

In order to make the information processing device of the present invention capable of processing color information, an effective method normally employed in image processing systems is used, for example, to add B, G, R A method in which the three filter films of B, G, and R are separately formed in a mosaic shape on another substrate, and then glued onto the light receiving surface. Alternatively, a method can be adopted in which three filters B, G, and H are used and the light irradiation is performed three times while changing the filters.

Next, a CCD as a photoelectric conversion section and a time series signal conversion section.
The manufacturing procedure of R will be explained in detail by giving examples.

Example 1 [Manufacture of photoelectric conversion section] A glass substrate of 210 mm x 300 mm and 2 mm thick was
After cleaning with neutral detergent, ultrasonic cleaning, rinsing with running water,
It was thoroughly cleaned and dried through the steps of pure water cleaning, cleaning with ethyl alcohol and potassium hydroxide, pure water cleaning, and ultrasonic cleaning. 5X10-6 was deposited on this substrate by vacuum evaporation method.
Aj2 was deposited to a thickness of 1 μm at a vacuum degree of torr.

After Aj2 vapor deposition, SiHa. pH 3 gas was introduced to maintain the pressure inside the vacuum chamber at ltorr, and then the 13.56. A glow discharge is caused in the deposition tank by supplying MHz high frequency power.
An n-type amorphous silicon film was deposited to a thickness of 1 μm on the J2 deposited film. Furthermore, stop the gas introduction of pH 3 and
2H6 gas is introduced into the vacuum chamber, and StH4, B2 Ha
Subsequently, a p-type amorphous silicon film was deposited to a thickness of 0.3 μm in a gas atmosphere. During glow discharge deposition,
The temperature of the substrate was maintained at 300°C.

As mentioned above, AIl. The substrate on which the vapor deposited film, n-type amorphous silicon film, and p-type amorphous silicon film have been formed is taken out into a vacuum chamber by breaking the vacuum, and then photoresist OM is applied.
A photoresist pixel pattern was formed on the p-type amorphous silicon film by coating R-83 (trade name: manufactured by Tokyo Ohka), exposing the pixel pattern to light using a mercury lamp, and developing.

Next, the portions to which the photoresist was not applied were etched using an etching solution (CP-4) to remove the P-type and N-type amorphous silicon films and the AJ2 film from the substrate in accordance with the pixel pattern.

After thoroughly drying after etching, a SiO2 film was deposited to a thickness of 3 μm by sputtering deposition, and the SiO2 film was deposited on the photoresist film and in the etched portion between each pixel.

After the Sin2 vapor deposition, the vacuum was broken again, the substrate was taken out of the vacuum chamber, and the photoresist was removed with a stripping solution. Sin
The two films remain as insulating members only between each pixel.

Al that was first deposited on the substrate again by vacuum evaporation method
A1 is evaporated to a thickness of 1 μm, intersecting with the electrode (X electrode) via n-type and p-type amorphous silicon films (Y electrode). The width of this vapor-deposited film may be significantly smaller than 1] of the Y electrode.

A flowchart of the above manufacturing process is not shown in FIG.

(Production of Part of COD Register) First, a SiO2 layer having a thickness of about 5,000 layers was thermally grown on a p-type silicon wafer substrate by heating.

Next, by photolithography, the oxide layer on the substrate portion where a plurality of sources and one drain portion were to be formed was removed, and then phosphorus was diffused into the substrate by thermal diffusion.

Next, the entire S i O 2 film was removed by etching. Then, by heating the substrate again, a film with a thickness of 2,000 people
The i02 layer was thermally grown to form a gate oxide film. Next, vacuum evaporation method and photolithography technology. A gate electrode of AJ2 was formed by thermal oxidation. The remaining steps for this COD resistor, ie, the drilling of the contact area and the heating of the two An wiring lines, are formed by the usual method, and the formation of multiple source areas. A CCD register having one drain section and one transfer section was formed.

A flowchart of the above manufacturing process is shown in FIG.

After forming the photoelectric conversion section and the time-series signal conversion section (CCDR in this case) as described above, the X electrode of the photoelectric conversion section (
Row conductor 8i) Connected to each terminal of the row selection signal generation section and connected with each Y electrode (column electrode) one-to-one with each source section of the CCDR section, as schematically shown in Fig. 9. Incorporate it into the main body as an input device for a DC that uses an inkjet method as a pressure system.
When copying an A4 original, an extremely clear, high-resolution, high-quality image was obtained.

In FIG. 16, 34 is a document, 35 is a light-receiving surface of a photoelectric conversion section, and an optical system 36 for imaging is arranged at a predetermined position between the document 34 and the light-receiving surface 71. 37 is a light source for illuminating the surface of the document. The optical system 36 includes a light receiving surface 35
It is provided in a state where it can be used in B shift so that the original image is formed on the image plane.

Regarding the illumination system, Vignette is generally used for the projection lens.
This is because even without ing, the peripheral image plane illuminance decreases as the cos' θ side increases with respect to the angle of view θ. In order to make the image plane illuminance on the light-receiving surface uniform, the illuminance around the document surface 34 is made to be higher than that at the center of the document surface.

One way to correct this is to arrange an illumination light source 37 along the periphery of the document surface 34, as shown in FIG.

Example 2 (Manufacture of a part of CCD register) A glass substrate of 300 mm x 300 mm and 2 mm thick was
After washing with a neutral detergent, it was thoroughly washed using the steps of rinsing with ultrasonic cleaning water, washing with pure water, washing with ethyl alcohol and potassium hydroxide, washing with pure water, and B-sonic washing, and then dried. One side of the substrate subjected to such treatment 300
An area of mm x 50 mm was coated with Abiezo wax.

AJ2 was deposited on the uncoated portion of the substrate to a thickness of 1 μm using a resistance heating vacuum deposition method at a vacuum level of 5×10 −6 torr.

A. Q SiH4 in vacuum chamber after evaporation. B2Ha gas is introduced to maintain the pressure inside the vacuum chamber at jtorr, and then 13.56 MHz high-frequency power is supplied to the perturbation coil wound outside the deposition chamber to cause glow discharge inside the deposition chamber, thereby depositing an An evaporated film. top p
A mold amorphous silicon film was deposited to a thickness of 10 μm. During the glow discharge deposition, the temperature of the substrate was maintained at 300°C.

As mentioned above, A℃. The substrate on which the amorphous silicon film was formed was set in another sputtering deposition apparatus after breaking the vacuum, and an S102 film was deposited to a thickness of 1 μm.

After depositing the Si02 film, the vacuum is broken and the substrate is taken out of the vacuum chamber, and then multiple sources 1 are formed using photolithography technology.
St. of the part where one train part is to be formed. Two layers were removed.

Next, phosphorus was injected into the p-type amorphous silicon film by ion implantation to form an n-type silicon portion.

Next, the St○2 film was completely removed by etching. Then, this substrate was placed in the sputtering deposition tank again, and a SiO2 film was deposited to a thickness of 2000 nm.

Next, a gate electrode of pattern A was formed by resistance heating vacuum evaporation, photolithography, and sputtering evaporation. The remaining steps of the thin film silicon CCD resistor thus formed, ie, the drilling of the contact portions, were performed in a normal process to form a thin film CCD resistor having a plurality of source portions, transfer gate portions, and one drain portion.

Next, heat is applied to melt the protective coating of Abiezo wax,
completely removed from the substrate using methyl ethyl ketone,
Furthermore, the substrate surface was cleaned using ethyl alcohol.

Thereafter, the portion where a portion of the CCD register was formed was completely covered with Abiezo wax (protective film type).

Subsequently, a photoelectric conversion section was formed using the same procedure as shown in Example 1. In this way, the photoelectric conversion section and a portion of the CCD register were formed, and the protective film of a and Ezowax was completely removed by the same method as described above.

Thereafter, a predetermined connection between a part of the CCD register and the photoelectric conversion section was performed by vacuum evaporation using a masking method.

A flowchart of the above manufacturing process is shown in FIG.

The product manufactured in this way was prepared in the same manner as in Example 1.
When I installed it in the main body as an input device for a DC that uses an inkjet method as an output system, I installed it in the layout shown schematically in the figure, and when I made copies, the copies were extremely clear and faithful to the original. Image obtained.

[Brief explanation of the drawing]

FIG. 1 is a block diagram for explaining the main components of the information processing device of the present invention, and FIGS. 2 to 4 show the configuration of a preferred embodiment of a photoelectric conversion element that is a component of the present invention. FIGS. 5 and 6 are schematic structural cross-sectional views showing a part of the structure of the two-dimensional photoelectric conversion section 1 and the time-series signal conversion section 6, and FIG. 7 and FIG. FIG. 8 shows photoelectric conversion units according to the present invention. A flowchart for explaining the process of forming a time-series signal converter, FIG. 9 is a schematic layout diagram when the information processing device of the present invention is actually incorporated into Digital Covia, and FIG. 10 is a photoelectric converter and 3 is a flowchart illustrating a process of forming a time series converter and a time series converter on the same substrate using thin film technology. DESCRIPTION OF SYMBOLS 1... Photoelectric conversion part, 2... Row selection signal generation part, 6.
. . . Time series signal converter, 7 . . . Transfer signal, 9, 14.
19...Photoelectric conversion element.

Claims (1)

[Claims] In a method for manufacturing an information processing device in which a photoelectric conversion section and a time-series signal conversion section that inputs signals output from the photoelectric conversion section in parallel and outputs them in series are formed on the same substrate,
A method for manufacturing an information processing device, characterized in that the photoelectric conversion section is formed after the time-series signal conversion section is formed on the substrate.