JPH0432550B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing an information processing device, and particularly to a method for manufacturing an information processing device including a photoelectric conversion section.

[Prior Art] A solid-state information processing device equipped with a photoelectric conversion device is used as an input device for a television image pickup device, a facsimile machine, a digital copying machine (abbreviated as DC), or for processing other characters, images, etc. It can be applied to reading devices, etc., and its development has recently made remarkable progress.

Such an information processing device includes a pixel group having a photoelectric conversion function and a circuit having a scanning function to extract electrical signals outputted from the pixel group in a sequentially arranged time series. diode
MOS/FET (Field Effeet Transiston) (MOS
(abbreviated as “type”) as a configuration/element, or CCD (Charge Coupled Device) or
BBD (Bucket Brigade Device), so-called CTD
There are various methods including those that include (Charge Transfer Device) as a component/element.

However, whether these are MOS type or CTD,
Since a Si single crystal (abbreviated as C-Si) wafer substrate is used, the area of the light receiving surface of the photoelectric conversion section is C-Si.
It is limited by the size of the wafer substrate. That is, at present, it is possible to manufacture C-Si wafer substrates with a size of at most several inches square, including uniformity across the entire substrate. MOS using
In an information processing device having CTD or CTD as a component/element, its light receiving surface cannot exceed the size of the aforementioned C-Si wafer substrate.

Therefore, in an information processing device having a photoelectric conversion section whose light-receiving surface has such a limited and small area, for example,
When used as a DC input device, it is necessary to interpose an optical system with a large reduction magnification between the original to be copied and the light-receiving surface, and form an optical image of the original on the light-receiving surface via the optical system. be.

In such a case, there are technical limits to increasing the resolution, as described below.

In other words, the resolution of the photoelectric conversion section is, for example, 10 lines/
mm, and the light-receiving area is 10 cm ² , and when trying to copy an A4-sized original, the optical image of the original formed on the light-receiving surface is reduced to about 1/60, and the photoelectric conversion unit for the A4 original is Actual resolution is approximately 108
It ends up dropping to books/mm. As described above, as the size of the original to be copied increases, the actual resolution decreases at the ratio of (size of light-receiving surface)/(size of original).

Therefore, in order to solve this problem, manufacturing technology that increases the resolution of the photoelectric conversion section is required in such a system, but it is difficult to achieve the required resolution in a small and limited area as mentioned above. In order to achieve this, it must be manufactured with extremely high integration density and with no defects in the components, but such manufacturing techniques have their own limitations.

On the other hand, by arranging a plurality of photoelectric conversion units so that the total light-receiving area is 1:1 with the area of the maximum original size that can be copied, the optical image of the original to be connected is divided into the number of photoelectric conversion units, and the actual A method has been proposed that attempts to avoid such a reduction in resolution.

However, even in such a method, there are disadvantages as described below. In other words, when a plurality of photoelectric conversion units are arranged, a boundary area where no light-receiving surface exists is inevitably generated between each photoelectric conversion unit, and when viewed as a whole, the light-receiving surface is no longer continuous and the image of the original is not formed. The optical image is divided, and the portion corresponding to the boundary area is not input to the photoelectric conversion unit, and the copied image has white spots in a grid pattern or portions corresponding to the white spots in a grid pattern. It becomes an incomplete thing that has been removed and combined. Furthermore, since the optical image that is divided into multiple light-receiving surfaces and formed is an optically reversed image on each light-receiving surface, the overall image is different from the optically reversed image of the original image. . Therefore, if the optical image formed on the light-receiving surface is reproduced as it is, the original document image cannot be reproduced.

As described above, in an information processing device equipped with a conventional photoelectric conversion section, it is extremely difficult to reproduce information with high resolution because the light receiving area is small.
Therefore, there is a demand for an information processing device that has a photoelectric conversion section that has a large light-receiving surface and excellent resolution. Particularly for applications in facsimiles, DC input devices, or other character or image reading devices, the size of the original must be equal to or relative to the size of the original to be reproduced so as to reduce the required resolution of the reproduced image. An information processing device equipped with a photoelectric conversion section having a light receiving area that is not extremely small is essential.

[Problems to be Solved by the Invention] However, when the manufactured information processing device was operated, there were cases in which there were differences in the output and reading accuracy of the device.

As a result of repeated studies in view of the above-mentioned problems, the present inventors have found that the above-mentioned variations in characteristics are related to the fabrication of information processing devices.

That is, it has been found that when manufacturing the above information processing device, variations may occur in the characteristics of the obtained information processing device depending on the manufacturing order of the photoelectric conversion section and the time series signal conversion section. .

The present invention has been made in view of the above points, and its purpose is to provide a photoelectric conversion section having a large-area light-receiving surface, high resolution, and high sensitivity;
The purpose of this invention is to propose a method for manufacturing an extremely lightweight information processing device.

Another object of the present invention is to propose a method for manufacturing an information processing device with extremely high precision and uniform characteristics.

[Means for Solving the Problems] A method for manufacturing an information processing device of the present invention includes a photoelectric conversion element having a photoelectric conversion element having two electrodes and a layer made of amorphous silicon provided between the electrodes. The layer made of amorphous silicon is composed of a photoelectric conversion section separated for each photoelectric conversion element and a thin film silicon that inputs signals output from the photoelectric conversion section in parallel and outputs them in series. A method for manufacturing an information processing device, in which a time-series signal conversion section having a layer and a time-series signal conversion section are formed in separate regions on the same substrate, the method comprising: forming a time-series signal conversion section having layers on the same substrate, and then forming the time-series signal conversion section on the substrate; The present invention proposes a method for manufacturing an information processing device characterized by forming a portion.

[Example] Hereinafter, the present invention will be explained in detail with reference to the drawings.

FIG. 1 is a block diagram for explaining the main components of an information processing apparatus according to the present invention.

Reference numeral 1 denotes a two-dimensional photoelectric conversion unit, which has a configuration in which m×n photoelectric conversion element groups are arranged in a matrix with m rows and n columns. The structure of the photoelectric conversion element will be described in detail later, but the n
Electrodes common to the photoelectric conversion elements (X ₁ , X ₂ , ...,
A photoelectric conversion layer is provided between the electrodes (Y ₁ , ₂ , Y ₃ , ..., Y _o-1 , _{Y o )} that _are common to the m photoelectric conversion elements constituting one row. has.

The photoelectric conversion layer constituting the photoelectric conversion element may be provided independently for each element, or may be provided continuously without being separated for each element, but which type to use depends on the photoelectric conversion layer. It depends on the material that makes up the conversion layer.

For example, in the case of a photovoltaic type, it is preferable to form each element separately, and in the case of a photoconductive type, it may be separated or continuous.

The light signal may be irradiated directly onto the light receiving surface of the two-dimensional photoelectric conversion unit, or may be irradiated by forming an image on the light receiving surface using a suitable optical system.

Reference numeral 2 denotes a row selection signal generation section that selects a designated electrode from the X electrode group constituting a row of the two-dimensional photoelectric conversion section 1 and generates a signal to be output, which includes a counter 3 and a switch (SW). It includes a signal generation circuit 4 and a switch (SW) circuit 5.

The SW signal generation circuit 4 is composed of, for example, a ring counter composed of a shift register (SR).

The SW circuit 5 is constituted by the number of X electrodes, that is, m electronic or mechanical elements having a switching function, and has the function of performing switching operations one after another in accordance with the signals successively generated by the SW signal generation circuit 4. For example, if X ₁ electrode is selected, then X ₁
A switching element connected to the electrode is activated.

Reference numeral 6 denotes a time-series signal converter, which inputs in parallel electrical signals output for each row in response to the optical signal input to the two-dimensional photoelectric converter 1, and converts the transfer signal 7
(shift pulse) in series with the signal 8.
It has the function of outputting as . That is, by inputting n transfer signals 7 to the time-series signal converter 6, all signals input in parallel from the two-dimensional photoelectric converter 6 are output to the time-series signal converter 6.

On the other hand, when n signals corresponding to the transfer signal 7 are inputted to the counter 3, one signal is outputted.Then, this signal is inputted to the SW signal generation circuit 4, and from the circuit 4 a two-dimensional A signal for selecting a row of the photoelectric conversion section 1 is output, and one of the switching element groups constituting the SW circuit 5 is operated.

The one-dimensional long photoelectric conversion section 1 in the present invention is divided into two parts from the time-series signal conversion section 6, and is formed using thin film precision technology, so it can have a large area unlike a normal so-called CCD photo sensor. For example, it is possible to make the area as large as the width of an A3 document.

Therefore, it is possible to directly read the original in a close-contact manner without using an optical system for reduction, making it possible to reduce the size and weight of the document. Time series signal converter 6
In contrast to the two-dimensional photoelectric conversion section 1, as long as it has the desired conversion function, it can be formed in as small an area as possible.

Moreover, the two-dimensional photoelectric conversion section 1 and the time series signal conversion section 6
Although they may be provided on the same substrate or on separate substrates, it is better to provide them on the same substrate for ease of connection. Furthermore, if both the two-dimensional photoelectric conversion section 1 and the time-series signal conversion section 6 are formed of thin films, they can be integrally formed on the same plane, improving mass productivity and performance. I can do it.

Alternatively, the two-dimensional photoelectric conversion section 1 can be provided on one both sides of the same substrate, and the time-series signal conversion section 6 can be provided on the other side.

In the present invention, the time-series signal converter 6 is constituted by converting means such as a CCD register (CCDR), a shift register (SR), and a switching transistor array (STA).

Next, the photoelectric conversion elements constituting the two-dimensional conversion section 1 shown in FIG. 1 will be explained.

2 to 6 are schematic cross-sectional views for explaining the basic configuration of photoelectric conversion elements constituting the two-dimensional photoelectric conversion section 1. FIG.

The photoelectric conversion elements constituting the two-dimensional photoelectric conversion section 1 in the present invention include (A) photovoltaic type (a) Pn coupling type (b) shot key barrier type (B) photoconductive type (c) photodiode Type (d) Monolayer type (C) Other types (e) MOS (Metal−Oxide−Semiconductor)
One example is the type.

Among these, types (A)-(a) are particularly effective in the present invention because of the advantages described below.

FIG. 2 is a schematic cross-sectional view showing the basic structure of the above classification (a).

The photoelectric conversion element 9 shown in FIG.
A photovoltaic layer 11 is provided between the column electrode 12 and the column electrode 12 .

In the figure, the photovoltaic layer 11 has a p-type semiconductor layer on the row electrode 10 side and an n-type semiconductor layer on the column electrode side, forming a p-n junction. Of course, this p-n stacking order may be reversed to that shown in the figure. Further, the p-n junction formed in layer 11 may be a homo-junction or a hetero-junction.

Materials that form homo-juncyion include, for example, amorphous silicon (A-Si), amorphous germanium (A-Ge), etc., and dimensions that are normally made using these materials, such as vacuum evaporation. The photovoltaic layer 22 is formed by a so-called physical deposition method (PVD) such as a PVD method, a glow discharge method, a sputtering method, or an ion plating method.

To form a hetero-junction, a method similar to that used for forming a homo-junction described above is adopted, but the photovoltaic layer 22 is It is best to select the material for the mold and the material for the n-type.

Examples of p-type materials include Cu ₂ S,
Examples of n-type materials include Pb ₀ , Sb ₂ S ₃ , ZncdTe, CdSeO ₃ , A-Si, etc. Specifically, examples of n-type materials include
DdS, Pb ₀ , Sb ₂ S ₃ , ZnSe, CdSe, In ₂ O ₃ , SnC ₂
etc.

Row electrodes 10 and column electrodes 12 are formed of a material that is in ohmic contact with layer 11. Such materials vary depending on the material forming the layer 11, but for example, A-
When forming a p-n junction as shown in the figure using Si, use Pt as the electrode material on the p-type A-Si layer side.
Ir, Au, Pd, Al, Mo polycrystalline Si (polySi) Nb,
Ta, V, Ti, Cr, stainless steel, etc. are n-type A-Si
Al, Mo, polySi, Nb,
Ta, V, Ti, Cr, stainless steel, etc. are used.

In addition, when light is irradiated from the row electrode 10 side as shown in the figure, the p-type layer on the light irradiation side is p-
It is best to form it thinly so that as much of the irradiation light as possible reaches the njunction part.

Conversely, when light is irradiated from the substrate 13 side,
For the same reason, the n-type layer is preferably formed thin. In this case, the column electrodes 12 need to be transparent to the irradiated light.

When the photoelectric conversion element is a photovoltaic type, in addition to the type that forms a p-n junction as described above, a Schottky barrier is formed between the row electrode 10 or column electrode 12 and the layer 11. (Category (A) - (b))
In this case, the row electrodes 10 or column electrodes 12 are formed of a material that forms a Schottky barrier with layer 11. That is, if the layer 11 is composed of n-type A-Si,
Specific examples include Pt, Ir, Au, and Pd.

The photoelectric conversion element 14 shown in FIG. 3 is of a photoconductive type, and has a column electrode 17 on a substrate 18, a photoconductive conversion layer 16 on the electrode 17, and a row electrode 15 on the layer 16. It has a built-in structure.

The photoelectric conversion layer 16 exhibiting photoconductivity can be formed from many commonly known photoconductive materials, but it needs to be selected from materials to which thin film technology can be applied. Examples of such materials include A-
Examples include Si, A-Ge, CdS, Se, and Se compounds.

Electrodes 15 and 17 are formed of a material that makes ohmic contact with layer 16. Examples of such materials include, for example, when the layer 16 is made of p-type A-Si, Pt, Ir, Au, Pd, Al,
Examples include Mo, PolySi, Nb, Ta, V, Ti, Cr, stainless steel, etc. When formed with n-type A-Si, for example, Al, Mo, PolySi, Nb, Ta, V,
Examples include Ti, Cr, and stainless steel.

The layer 16 is formed of a p-type or n-type photoconductive material as described above, but it may also have a structure in which p-type and n-type are laminated. (Category (B) - (C)) In addition, when the electrode 15 is irradiated with light from the electrode 15 side, in order to avoid light absorption by the electrode 15 as much as possible, for example, the electrode 15 is separated at both ends of the layer 16 and placed in the center. It is advisable to devise a method in which the irradiation light is directly incident on the layer 16 in the vicinity.

FIG. 4 is a schematic cross-sectional view showing the basic configuration for category (e).

The photoelectric conversion element shown in Fig. 6 is a so-called MOS
It has a photosensitive element structure. The photoelectric conversion element 19 is
For example, if the electrode 20 side is n-type as shown in the figure, the part where the light 21 is incident and the part where the drain electrode 22 (column electrode) is attached are
The gate electrode 2 is made into a P ⁺ type, and the gate electrode 2 is
The portion to which 4 (row electrode) is attached is formed to be n-type. Examples of materials for forming the photoelectric conversion element 19 of such a MOS photosensitive element structure include Si. In the figure, the electrode 20 side is shown to be n-type, but if the electrode 20 side is p-type, P ⁺ in the figure is formed to be n ⁺ .

FIG. 5 is a schematic structural cross-sectional perspective view showing a part of the structure of the two-dimensional photoelectric conversion section 1 and the time-series signal conversion section 6 in the main explanatory section of the information processing device shown in FIG. . In FIG. 5, a case is shown in which the time-series signal converter 6 is configured with a CCDR.
The CCDR constituting the time series signal converter 6 is, for example, p
An insulating layer 26 made of SiO ₂ is formed on a part of the mold silicon layer 25, and n transfer electrodes 27 are provided on the layer 26, which are separated and independently provided. As clearly shown in the figure, an n ⁺ type silicon layer 28 is formed in the P type silicon layer 25,
On the layer 28, column electrodes ( _Y1 ...
n electrodes 30 are provided corresponding to each electrode (Y, Yj...Yn). The n electrodes 30 and the n column electrodes ( _Y1 ...Yi, Yj...Yn) are connected to the conductive wires 3 as shown in the figure.
They are electrically connected one-to-one through 1. The photoelectric conversion element 29 has column electrodes ( _Y1 ...Yi, Yj...Yn)
A photoelectric conversion layer 32 is provided between the row electrodes ( _X1 ...Xk, Xl...Xm), and the photoelectric conversion layer 3
2 is, for example, a photovoltaic layer in which a pn junction is formed. In this case, the row electrodes (X ₁ …
Xk, Xl . . . Therefore, the row electrodes (X ₁ ...Xk, Xl...
When light is irradiated from the row electrodes ₍ X ₁ ... Xk, Xl...
. . Xk, Xl...

As mentioned above, when the photoelectric conversion layer 32 is a layer exhibiting photovoltaic force, an electrically insulating layer portion 3 is provided between each layer.
3 to electrically insulate each photoelectric conversion layer 32.

Similarly to FIG. 5, FIG. 6 is a schematic structural cross-section showing a part of the structure of the two-dimensional photoelectric conversion unit 1 and the time-series signal conversion unit 6 among the main components of the information processing device shown in FIG. Although it is a perspective view, it is not essentially different from the case of FIG. In Figure 6, the fifth
The difference from the diagram is that in the case of FIG. 5, the time-series signal converter 6 is composed of a CCDR, and the CCDR is an integrally formed storage part and transfer part, whereas the sixth The CCDR shown in the figure is provided with a storage section and a transfer section separated, and each transfer electrode 27
The only difference is that the storage electrodes 34 are provided in a 1:1 ratio. The other structures and functions are completely the same as those shown in FIG.

In order to enable the information processing device of the present invention to process color information, an effective method normally employed in the field of image processing is used, for example, three filter films B, G, and R are placed on the light receiving surface of the photoelectric conversion section. B.
A method in which three filter films, G and R, are separately formed into a mosaic shape and is placed on the light receiving surface using an adhesive, etc. A method in which three filter films, B, G, and R are used and light is irradiated. It is possible to adopt a method of doing this three times while changing the filter.

Next, the manufacturing procedure of a CCDR as a photoelectric conversion unit and a time-series signal conversion unit will be described in detail using examples. In the present invention, after the photoelectric conversion section is fabricated, an information processing device is fabricated without affecting the photoelectric conversion section from the process for fabricating the time-series signal conversion section.

Specifically, by fabricating the time-series signal converter after fabricating the photoelectric converter, even if a protective layer or the like is provided on the photoelectric converter, the effects of each process associated with fabricating the time-series signal converter (for example, , heat treatment, and etching), and requires unnecessary steps to protect the photoelectric conversion section, but these steps are not preferable for producing a high-definition, high-performance photoelectric conversion section.

The present invention solves this problem and proposes a method for manufacturing an information processing device equipped with a photoelectric conversion section having desired characteristics.

An example of the method for manufacturing a photoelectric conversion unit of the present invention will be described below.

[Manufacture of photoelectric conversion unit]

Process of cleaning a 210mm x 300mm 2mm thick glass substrate with a neutral detergent, followed by ultrasonic cleaning, rinsing with running water, pure water cleaning, cleaning with ethyl alcohol and potassium hydroxide, pure water cleaning, and ultrasonic cleaning. in,
It was thoroughly washed and dried. On this substrate, a film of Al with a thickness of 1 μm was deposited using a vacuum evaporation method at a vacuum level of 5×10 ^-6 torr.
It was deposited to a thickness of m. After Al deposition, in a vacuum chamber
Introducing SiH ₄ and pH ₃ gas to reduce the pressure inside the vacuum chamber.
1 torr, then 13.56 MHz high frequency power was supplied to an induction coil wound outside the deposition tank to generate glow discharge inside the deposition tank, and a 1 μm thick n-type amorphous silicon film was deposited on the Al deposited film. Deposited to a thickness. Furthermore, the introduction of pH ₃ gas was stopped and B ₂ H ₆ gas was introduced into the vacuum chamber, and in the SiH ₄ and B ₂ H ₆ gas atmosphere,
Subsequently, a p-type amorphous silicon film was deposited to a thickness of 0.3 μm. During glow discharge deposition, the temperature of the substrate was maintained at 300°C.

The substrate on which the Al deposited film, n-type amorphous silicon film, and p-type amorphous silicon film were formed as described above was taken out into a vacuum chamber by breaking the vacuum.
Photoresist OMR-83 (product name; manufactured by Tokyo Ohka)
A photoresist pixel pattern was formed on the p-type amorphous silicon film by coating the photoresist, exposing the pixel pattern to light using a mercury lamp, and developing it.

Next, the portions to which the photoresist was not coated were etched using an etching solution (CP-4) to remove the P-type and N-type amorphous silicon films and the Al film from the substrate in accordance with the pixel pattern.

After thoroughly drying after etching, a SiO ₂ film is deposited to a thickness of 3 μm by sputtering deposition on the photoresist film and in the etched areas between each pixel.
A SiO ₂ film was deposited.

After SiO ₂ deposition, the vacuum was broken again, the substrate was taken out of the vacuum chamber, and the photoresist was removed with a stripping solution. The SiO ₂ film remains as an insulating member only between each pixel.

Again, Al was deposited to a thickness of 1 μm in a manner that crossed the Al electrode (X electrode) that was first deposited on the substrate using the vacuum evaporation method and the n-type and p-type amorphous silicon films.
Deposit to a thickness of m (Y electrode). The width of this deposited film may be significantly smaller than the width of the Y electrode. A flowchart of the above manufacturing process is shown in FIG.

Next, a reference example of manufacturing a CCD register section will be explained.

[Manufacture of CCD register part]

First, a 5000 Å film was deposited on a p-type silicon wafer substrate.
A SiO ₂ layer with a thickness of about 100 mL was thermally grown on the substrate by heating. Next, by photolithography, the oxide layer on the substrate portion where a plurality of sources and one drain portion were to be formed was removed, and then phosphorus was diffused into the substrate by thermal diffusion.

Next, the entire SiO ₂ film was removed by etching.
Then, by heating the substrate again, a film with a thickness of 2000 Å was formed.
A gate oxide film was formed by thermally growing a _SiO2 layer.
Next, using vacuum evaporation, photolithography, and thermal oxidation,
A gate electrode of Al was formed. The remaining steps for this CCD resistor, namely contact hole drilling, Al wiring, and heat treatment, are performed using normal methods.
A CCD register having multiple source sections, one drain section, and a transfer section was formed. A flowchart of the above manufacturing process is shown in FIG.

Reference Example 1 After forming the photoelectric conversion section and the time-series signal conversion section (CCDR in this case) as described above, connect the X electrode (row electrode) of the photoelectric conversion section to each terminal of the row selection signal generation section. Lead connections were made between each Y electrode (column electrode) and each source section of the CCDR section on a one-to-one basis.

That is, after forming the time-series signal conversion section on the substrate, the photoelectric conversion section and the time-series signal conversion section were connected.

This was installed in the main body as an input device for a DC that uses an inkjet method as an output system, with the layout shown schematically in Figure 9, and an A4 document was copied. High-quality images with extremely clear clarity and high resolution were obtained.

In FIG. 9, 34 is a document, 35 is a light-receiving surface of a photoelectric conversion section, and an optical system 36 for imaging is arranged at a predetermined position between the document 34 and the light-receiving surface 71. 37 is a light source for illuminating the surface of the document.
The optical system 36 is provided in a movable state so that the original image is formed on the light receiving surface 35.

Regarding the illumination system, generally the projection lens
This is because even without vignetting, the peripheral image plane illuminance decreases as the angle of view θ approaches the cos ⁴ θ side. In order to make the image plane illuminance on the light receiving surface uniform, the illuminance around the document surface 34 is made higher than that at the center of the document surface. As one method to correct this, as shown in FIG.
It is preferable to arrange the illumination light source 37 along the periphery of the .

Example 1 Next, as an example of the present invention, an example will be described in detail in which a CCD register section and a photoelectric conversion section are formed on the same substrate using thin semiconductor layers, respectively. Of course, in this embodiment as well, the photoelectric conversion section is created on the substrate after the CCD register section, which is the time-series signal conversion section, is first manufactured.

[Manufacture of CCD register part]

Process of cleaning a 300mm x 300mm 2mm thick glass substrate with a neutral detergent, followed by ultrasonic cleaning, rinsing with running water, pure water cleaning, cleaning with ethyl alcohol and potassium hydroxide, pure water cleaning, and ultrasonic cleaning. in,
It was thoroughly washed and dried. An area of 300 mm x 50 mm on one side of the substrate treated in this manner was coated with apiezo wax. On the uncoated portion of this substrate, Al was deposited to a thickness of 1 μm at a vacuum degree of 5×10 ⁻⁶ torr by resistance heating vacuum deposition method. After Al deposition, SiH ₄₁ B ₂ H ₆ gas is introduced into the vacuum chamber to maintain the pressure inside the vacuum chamber at 1 torr, and then 13.56MHz high frequency power is supplied to an induction coil wound outside the deposition chamber to generate glow discharge. raised in the tank
10μm p-type amorphous silicon film on Al deposited film
It was deposited to a thickness of . During glow discharge deposition, the temperature of the substrate was maintained at 300°C.

The substrate on which the Al and amorphous silicon films were formed as described above was set in another sputtering deposition apparatus after breaking the vacuum, and an SiO ₂ film was deposited to a thickness of 1 μm.

After depositing the SiO ₂ film, the vacuum is broken and the substrate is taken out of the vacuum chamber. Next, photolithography is used to form the parts where multiple sources and one drain are to be formed.
The _SiO2 layer was removed.

Next, phosphorus was injected into the p-type amorphous silicon film by ion implantation to form an n-type silicon portion.

Next, the entire SiO ₂ film was removed by etching. Then, this substrate was again set in the sputtering vapor deposition bath, and a SiO ₂ film was vapor-deposited to a thickness of 2000 Å.

Next, resistance heating vacuum evaporation method, photolithography technology,
A gate electrode of Al was formed by sputtering vapor deposition. Thin film silicon formed in this way
The remaining steps of the CCD resistor, ie, the drilling of the contact portions, were performed in a normal process to form a thin film CCD resistor having multiple source portions, transfer gate portions, and one drain portion.

Next, the protective film of Apiezo Wax was melted by heating, and it was completely removed from the substrate using methyl ethyl ketone, and the surface of the substrate was further cleaned using ethyl alcohol.

Thereafter, the area where the CCD register was formed was completely covered with apiezo wax (protective film type).

Subsequently, a photoelectric conversion section was formed in the same manner as described above. In this way, the photoelectric conversion section and
The apiezo wax protective coating was completely removed from the CCD register section by the same method as described above.

Thereafter, predetermined connections between the CCD register section and the photoelectric conversion section were made by vacuum evaporation using a masking method.

A flowchart of the above manufacturing process is shown in FIG.

The product manufactured in this way was arranged in the same manner as in Reference Example 1 as shown schematically in Figure 9, and was used as an input device for a DC that uses the inkjet method as an output system. Incorporated into
When copying was performed, an extremely clear copy image that was faithful to the original was obtained.

[Effects] As described above, according to the present invention, there is provided a method for manufacturing an information processing device that has a large-area light-receiving surface, has a photoelectric conversion section with high resolution and high sensitivity, and is extremely lightweight. can be proposed.

Further, according to the present invention, it is possible to propose a method for manufacturing an information processing device that is capable of extremely highly accurate reading and has uniform characteristics.

According to the present invention, since the photoelectric conversion section is manufactured after the time series conversion section is manufactured, the photoelectric conversion section can have desired characteristics as designed, and an extremely excellent information processing device can be obtained. Can be provided.

In addition, unnecessary heat treatment and other treatments performed after the photoelectric conversion unit is fabricated are kept to a minimum, so there is no variation in the photoelectric conversion unit, and even within a single photoelectric conversion unit, information with uniform characteristics can be obtained. Processing equipment can be provided.

[Brief explanation of drawings]

FIG. 1 is a block diagram for explaining the main components of the information processing device of the present invention, and FIGS. 2 to 4 are configurations of preferred embodiments of the photoelectric conversion elements that are the components of the present invention. FIGS. 5 and 6 are schematic structural cross-sectional views showing a part of the structure of the two-dimensional photoelectric conversion section 1 and the time-series signal conversion section 6, and FIG. 7 and FIG. FIG. 8 is a flowchart for explaining the steps of forming a photoelectric conversion section and a time-series signal conversion section according to the present invention, respectively, and FIG. 9 is a case in which the information processing device of the present invention is actually incorporated into a digital copier. FIG. 10 is a flowchart illustrating the process of forming the photoelectric conversion section and the time series conversion section shown in Reference Example 1 on the same substrate by thin film technology. DESCRIPTION OF SYMBOLS 1...Photoelectric conversion part, 2... Row selection signal generation part, 6...
Time series signal converter, 7...transfer signal, 9, 14, 1
9...Photoelectric conversion element.

Claims (1)

[Claims] 1. A plurality of photoelectric conversion elements each having a photoelectric conversion element having two electrodes and a layer made of amorphous silicon provided between the electrodes, and the layer made of amorphous silicon is separated for each photoelectric conversion element. A photoelectric conversion section consisting of a photoelectric conversion section and a time series signal conversion section having a layer made of thin film silicon that inputs signals output from the photoelectric conversion section in parallel and outputs them in series are formed in separate areas on the same substrate. 1. A method of manufacturing an information processing device comprising forming the photoelectric conversion section after forming the time-series signal conversion section on the substrate.