JPH02292829A - Plating device - Google Patents

Plating device

Info

Publication number
JPH02292829A
JPH02292829A JP1113039A JP11303989A JPH02292829A JP H02292829 A JPH02292829 A JP H02292829A JP 1113039 A JP1113039 A JP 1113039A JP 11303989 A JP11303989 A JP 11303989A JP H02292829 A JPH02292829 A JP H02292829A
Authority
JP
Japan
Prior art keywords
wafer
pallet
plating
chamber
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1113039A
Other languages
Japanese (ja)
Other versions
JPH0834211B2 (en
Inventor
Hiroshi Takenaka
竹中 博
Atsusuke Sakaida
敦資 坂井田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP1113039A priority Critical patent/JPH0834211B2/en
Publication of JPH02292829A publication Critical patent/JPH02292829A/en
Publication of JPH0834211B2 publication Critical patent/JPH0834211B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Electroplating Methods And Accessories (AREA)

Abstract

PURPOSE:To manufacture the title plating device capable of immediately handling wafers in different diameters, increasing the production efficiency further augmenting the freedom in wafer handling process doing no damage to the wafers by a method wherein the plating device is provided with respective specific pallet, carrier and press down means. CONSTITUTION:The title plating device is provided with a pallet 1 for mounting a wafer W and having an opening to expose the plated surface of the wafer W as it is mounted, a carrier 2 elastically supporting the pallet 1 and carrying it between the position immediately above the opening of a plating chamber 4 opening upward and the other position distant from the plating chamber 4, a press down means 3 pressing down the wafer W carried to the position immediately above the plating chamber 4 by the carrier 2 so that the outer periphery of lower surface of the wafer W may be liquid-tightly pressure-welded into an opening edge of the pallet 1 likewise the outer periphery of lower surface of the pallet 1 into the opening edge of the plating chamber 4. For example, an elevating mechanism 5 to lift up the wafer W for taking it out is provided in the position distant from the chamber 4.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明はめっき装置に関し、特に半導体ウェハ等のボン
ディング電極にめっきを施す等の用途に使用するめっき
装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a plating apparatus, and more particularly to a plating apparatus used for plating bonding electrodes of semiconductor wafers and the like.

[従来の技術] かかる用途に使用する従来装置の概略構成を第6図で説
明すると、架台9に支持せしめてめっき液を内封した循
環タンク71が設けてあり、該循環タンク71には三方
弁72を介してポンブ7が接続してある。待機状態では
、三方弁72と管路73、74を経てめっき液が循環せ
しめられている。
[Prior Art] The schematic structure of a conventional device used for such purposes is explained with reference to FIG. 6. A circulation tank 71 is supported on a pedestal 9 and contains a plating solution. A pump 7 is connected via a valve 72. In the standby state, the plating solution is circulated through the three-way valve 72 and the pipes 73 and 74.

循環タンク71の密閉された土壁中央には、タンク71
に一体にめっきチャンバ4が設けてあり、該チャンバ4
は上方へ開口する筒体で、その筒底壁には周囲にアノー
ド電極44を設けた噴流ノズル41が形成され、筒側壁
には排出口42が形成されている。
The tank 71 is located in the center of the sealed earthen wall of the circulation tank 71.
A plating chamber 4 is integrally provided in the chamber 4.
is a cylindrical body that opens upward; a jet nozzle 41 with an anode electrode 44 around it is formed on the bottom wall of the cylindrical body, and a discharge port 42 is formed on the side wall of the cylindrical body.

上記めっきチャンバ4の開口縁外周にはウェハWの径よ
りもやや大きい径の周壁49が形成されて、ウェハ保持
部となっており、上記開口縁内周部に設けたシール17
とカソード電極18上に外周下面を接してウェハWが載
置される。
A peripheral wall 49 having a diameter slightly larger than the diameter of the wafer W is formed on the outer periphery of the opening edge of the plating chamber 4, and serves as a wafer holding portion, and a seal 17 provided on the inner periphery of the opening edge.
The wafer W is placed on the cathode electrode 18 with its outer peripheral lower surface in contact with the wafer W.

めっき処理をする場合には、上記ウェハWを、押圧シリ
ンダ31によつ゜ζ下方ノ\移動する押圧板33により
圧し、上記シール17に密着せしめる.この後、上記ア
ノード電極44とカソード電極18間に電源8より直流
電圧を印加し、三方弁72を切替えて、ポンブ7より吐
出するめつき液を、管路75を経て噴流ノズル41に送
って、めっきチャンバ4内へ噴出せしめる。めっき液は
上記噴流ノズル41により正に帯電し、ウェハW下面の
被めっき面に至ってめっき層を形成し、その後排出口4
2より循環タンク71内へ戻る。
When plating is to be performed, the wafer W is pressed by a pressing plate 33 that moves downward by ゜ζ by means of a pressing cylinder 31, so as to bring it into close contact with the seal 17. After that, a DC voltage is applied from the power supply 8 between the anode electrode 44 and the cathode electrode 18, the three-way valve 72 is switched, and the plating liquid discharged from the pump 7 is sent to the jet nozzle 41 via the pipe 75. The liquid is ejected into the plating chamber 4. The plating solution is positively charged by the jet nozzle 41, reaches the surface to be plated on the lower surface of the wafer W, and forms a plating layer, and then passes through the discharge port 4.
2 to return to the inside of the circulation tank 71.

なお、上記ウェハ保持部49へのウェハWの供給および
めっき処理後の取出しは、同じく架台9上に設けたロボ
ットアーム54により行われる。
The wafer W is supplied to the wafer holding section 49 and taken out after the plating process by a robot arm 54 similarly provided on the pedestal 9.

[発明が解決しようとする課題] ところで、上記従来のめつき装置では、ウェハ保持部が
めつきチャンバと全く一体か、ボルト等により機械的に
結合されているため、異なる径のウェハに対して対応不
可能、ないし速やかな対応ができないという問題点があ
り、また、めっきチャンバ上で処理後のウェハを取出す
ため、下方より押し出すような取出し方法は不可能であ
り、シールに張り付いたウェハをロボットアームの爪等
により上方へ引き剥がず等によりウェハが破損するとい
う問題があった。
[Problems to be Solved by the Invention] Incidentally, in the conventional plating apparatus described above, the wafer holder is either completely integrated with the plating chamber or is mechanically connected to the plating chamber by bolts or the like, so it is not possible to handle wafers of different diameters. There is a problem that it is impossible or impossible to respond quickly. Also, since the wafer is removed after processing on the plating chamber, it is impossible to remove the wafer by pushing it out from below. There was a problem in that the wafer could be damaged due to the wafer not being peeled upward due to the claws of the arm or the like.

本発明はかかる課題を解決するもので、異なる径のウェ
ハに即座に対応することができて、生産効率の向上を実
現し、また、ウェハのハンドリングの自由度を増して、
その破損を生じないハンドリングを可能としためつき装
置を提供することを目的とする。
The present invention solves these problems by being able to immediately handle wafers of different diameters, improving production efficiency, and increasing the degree of freedom in wafer handling.
It is an object of the present invention to provide a tightening device that can be handled without causing damage.

[課題を解決するための手段] 本発明の構成を第1図で説明すると、めっき装置は、ウ
ェハWを載置し、載置状態で上記ウェハW下面の被めっ
き面を露出せしめる開口1aを形成したパレット1と、
該パレット1を弾性的に支持し、上方へ開口するめっき
チャンバ4の開口直上位置と、めっきチャンバ4より離
れた位置との間で移動するキャリア2と、キャリア2に
より上記めっきチャンバ4直上位置へ移送されたウェハ
Wを上方より押圧して、ウェハWの下面外周をパレッド
開口1a縁に、パレット1の外周下面をめっきチャンバ
4の開口縁に、それぞれ液密的に圧接せしめる押圧手段
3とを具備している。
[Means for Solving the Problems] The configuration of the present invention will be described with reference to FIG. 1. A plating apparatus has an opening 1a for placing a wafer W thereon and exposing the surface to be plated on the lower surface of the wafer W in the placed state. The formed pallet 1 and
A carrier 2 elastically supports the pallet 1 and moves between a position directly above the opening of the plating chamber 4 that opens upward and a position away from the plating chamber 4, and a carrier 2 that moves the pallet 1 to a position directly above the plating chamber 4. A pressing means 3 presses the transferred wafer W from above to bring the outer periphery of the lower surface of the wafer W into pressure contact with the edge of the pallet opening 1a and the lower outer periphery of the pallet 1 with the edge of the opening of the plating chamber 4 in a liquid-tight manner. Equipped with

[作用コ 上記構造のめっき装置において、パレット1を介してキ
ャリア2に載置されたウェハWは、キャリア2により、
めっきチャンバ4直上位置へ移動せしめられて、抑圧手
段3により下方へ押圧され、ウェハWおよびパレット1
がそれぞれ液密的に圧接せしめられる。この状態で、め
っきチャンバ4内にめっき液を導入すると、パレット開
口1aを経て上記チャンバ4内に露出している上記ウェ
ハWの被めっき面にめっき層が形成される。
[Operation] In the plating apparatus having the above structure, the wafer W placed on the carrier 2 via the pallet 1 is
The wafer W and pallet 1 are moved to a position directly above the plating chamber 4 and pressed downward by the suppressing means 3.
are brought into fluid-tight pressure contact with each other. In this state, when a plating solution is introduced into the plating chamber 4, a plating layer is formed on the surface to be plated of the wafer W exposed into the chamber 4 through the pallet opening 1a.

めっき処理終了後は、押圧手段3による押圧は解消され
、キャリア2はめつきチャンバ4より離れた位置へ移動
する。ウェハWの取出しは、めっきチャンバ4の直上で
ないことにより、例えば下方より押し上げるような取出
しが可能であり、ウェハWの破損が防止される。
After the plating process is completed, the pressure by the pressing means 3 is released, and the carrier 2 moves to a position away from the plating chamber 4. Since the wafer W is not directly above the plating chamber 4, it is possible to take out the wafer W by pushing it up from below, and damage to the wafer W can be prevented.

また、キャリア2に載置されるパレット1を交換するこ
とにより、異なった径のウェハに即座に対応することが
でき、さらに、異なるパレット1を載置したキャリア2
を複数設けて、所望のキャリア2をめっきチャンバ4上
に移動せしめるようになせば、即応性がより向上する。
In addition, by exchanging the pallet 1 placed on the carrier 2, it is possible to immediately handle wafers of different diameters.
If a plurality of carriers 2 are provided so that a desired carrier 2 can be moved onto the plating chamber 4, responsiveness will be further improved.

[実施例] 第1図において、架台9上に設けたベース91の左半部
には上方へ開口する循環タンク71か設けてあり、該タ
ンク71内のめつき液は、三方弁72および管路73、
74を経てポンプ7により循環せしめられている。上記
循環タンク71の開口はめっきチャンバ4により閉鎖さ
れており、該チャンバ4は中央が筒状に下方へ突出して
、突出端面には噴流ノズル41が開口し、筒側壁の上部
には排出口42が形成してある。なお、上記噴流ノズル
41開口縁のめっきチャンバ4内壁にはアノード電極4
4が設けられ、これはチャンバ4外の電源8に接続して
ある。また、上記噴流ノズル41には上記三方弁72か
らの管路75が至っている。
[Embodiment] In FIG. 1, a circulation tank 71 that opens upward is provided in the left half of a base 91 provided on a pedestal 9, and the plating liquid in the tank 71 is distributed through a three-way valve 72 and a pipe. Road 73,
It is circulated by the pump 7 via the pump 74. The opening of the circulation tank 71 is closed by the plating chamber 4, and the center of the chamber 4 protrudes downward into a cylindrical shape, a jet nozzle 41 is opened at the protruding end surface, and a discharge port 42 is provided at the upper part of the cylindrical side wall. is formed. An anode electrode 4 is provided on the inner wall of the plating chamber 4 at the opening edge of the jet nozzle 41.
4 is provided, which is connected to a power source 8 outside the chamber 4. Further, a conduit 75 from the three-way valve 72 is connected to the jet nozzle 41 .

上記めっきチャンバ4の開口周縁上面にはシルリング4
3が配設され、該シールリング43にはウェハWを載置
した詳細を後述するパレット1が圧接して位置するとと
もに、該パレット1はキャリア2上に載置されている(
第2図)。
A sill ring 4 is provided on the upper surface of the opening periphery of the plating chamber 4.
A pallet 1 (details of which will be described later) on which a wafer W is mounted is placed in pressure contact with the seal ring 43, and the pallet 1 is placed on a carrier 2 (
Figure 2).

上記キャリア2は後述する機構によりベース91の右半
部へ移動可能であり、第1図は、実際には一台のキャリ
ア2について、右移動端にある状悪も示してある。この
右移動端には詳細を後述するウェハ昇降機構5が設けて
ある。
The carrier 2 can be moved to the right half of the base 91 by a mechanism to be described later, and FIG. 1 actually shows one carrier 2 in a bad condition at the right end of movement. A wafer elevating mechanism 5, the details of which will be described later, is provided at this right moving end.

以下、上記パレット1とキャリア2の詳細構造を説明す
る。
The detailed structures of the pallet 1 and carrier 2 will be explained below.

パレット1は、長方形状の基板11(第3図)を有し、
基板11の中心には一部を直線とした略円形の開口12
が形成され、開口12縁の上面は一定幅で座ぐって(第
4図)板状シール13を面一に配設してある。上記開口
12の形状は、ウェハWに沿い、かつ、これよりもやや
小径となっており、ウェハWを載置した状匹で、被めっ
き面たるウェハW下面が上記開口12に露出する。
The pallet 1 has a rectangular substrate 11 (FIG. 3),
At the center of the substrate 11 is a substantially circular opening 12 with a portion straight.
is formed, and the upper surface of the edge of the opening 12 is counter-sunk with a constant width (FIG. 4), and the plate-shaped seal 13 is disposed flush with it. The shape of the opening 12 is along the wafer W and has a slightly smaller diameter than the wafer W, so that the lower surface of the wafer W, which is the surface to be plated, is exposed to the opening 12 as if the wafer W was placed thereon.

上記基板11上には、開口12を挟んで対向位置にクラ
ンプ機構14が設けてあり、各クランプ機構14は、先
端に把持板141を固定しコイルバネ142により突出
付勢されたシャフト143を有し、該シャフト143は
、直動軸受け146を設けたブラケット145により支
持されるとともに、シャフト後端大径部144がブラケ
ット145に当接して突出端に位置決めされている。
Clamp mechanisms 14 are provided on the substrate 11 at positions facing each other with the opening 12 in between, and each clamp mechanism 14 has a shaft 143 having a grip plate 141 fixed to its tip and biased to protrude by a coil spring 142. The shaft 143 is supported by a bracket 145 provided with a direct-acting bearing 146, and the rear end large diameter portion 144 of the shaft abuts against the bracket 145 and is positioned at the protruding end.

上記各クランプ機構14より90度離れた対向位置には
上記開口12を挟んで、ボルト151と座金152より
なる受電接点15が設けられ、これら受電接点15から
は上記シール13上を径方向へ延びて開口12へ至るカ
ソード電極16が設けてある。このカソード電極16は
、ごく薄い(約50μm)膜状で、シール表面に接着さ
れている。
A power receiving contact 15 consisting of a bolt 151 and a washer 152 is provided at an opposing position 90 degrees apart from each of the clamp mechanisms 14 with the opening 12 in between. A cathode electrode 16 extending to the opening 12 is provided. This cathode electrode 16 is a very thin film (approximately 50 μm) and is adhered to the seal surface.

キャリア2は、上記パレット1よりもやや大径の長方形
フレーム21(第2図)を有し、該フレーム21には一
対の対向辺に、それぞれシャフト22が直動軸受けによ
って上下動自在に支持されている。上記シャフト22は
コイルバネ23により上端位置に付勢されるとともに、
その下端には板状の爪体24が固定され、各シャフト2
2の爪体24がフレーム21内に突出し、上記パレット
1の側縁下面の段付部を受けている。
The carrier 2 has a rectangular frame 21 (FIG. 2) having a slightly larger diameter than the pallet 1, and a shaft 22 is supported on a pair of opposite sides of the frame 21 so as to be vertically movable by a linear bearing. ing. The shaft 22 is urged to the upper end position by a coil spring 23, and
A plate-shaped claw body 24 is fixed to the lower end of each shaft 2.
Two claw bodies 24 protrude into the frame 21 and receive stepped portions on the lower surface of the side edges of the pallet 1.

上記フレーム21の対向する一辺の下面はブラケット2
5(第2図)を介して、ベース91上を左右方向へ延び
るロッドレスシリンダ26に連結され、他辺はベース9
1上に上記シリンダ26と平行に配設したガイドシャフ
ト27に摺動自在に連結してある。しかして、キャリア
2は上記シリンダ26により、左端のめつきチャンバ4
直上位置と、右端のウェハ昇降機構5の直上位置との間
で移動せしめられる。
The lower surface of the opposite side of the frame 21 is a bracket 2
5 (FIG. 2) to the rodless cylinder 26 extending in the left-right direction on the base 91, and the other side is connected to the rodless cylinder 26 via the base 91 (FIG. 2).
The cylinder 26 is slidably connected to a guide shaft 27 disposed on the cylinder 26 in parallel with the cylinder 26. Thus, the carrier 2 is moved into the plating chamber 4 at the left end by the cylinder 26.
It is moved between a position directly above the wafer lifting mechanism 5 and a position directly above the wafer lifting mechanism 5 at the right end.

昇降機構5は、シリンダ51(第1図)より延びて上下
動するピストンロツド52の先端に円形の受け板53を
固定したもので、キャリア2が右端位置に至った状態で
、パレット開口1aの中心に一致し、上昇途中で上記パ
レット1に載置されたウェハWを上方へ押し上げて取出
し、下降途中で上記ウェハWをパレット上上に載置する
。なお、上昇した上記受け台53へのウェハWの供給、
これからのウェハWの取出しは旋回作動するロボットア
ーム54で行なう。また、受け台53上のウェハWの存
在は光電スイッチ55により確認される。
The elevating mechanism 5 has a circular receiving plate 53 fixed to the tip of a piston rod 52 that extends from a cylinder 51 (Fig. 1) and moves up and down. During the ascent, the wafer W placed on the pallet 1 is pushed up and taken out, and during the descent, the wafer W is placed on the pallet. In addition, supplying the wafer W to the raised pedestal 53,
The wafer W is then taken out by a robot arm 54 that operates in a swiveling manner. Further, the presence of the wafer W on the pedestal 53 is confirmed by the photoelectric switch 55.

上記めっきチャンバ4の直上位置には架台9に固定して
押圧機構3が設けてあり、押圧機′!f43は、シリン
ダ31より延びて上下動するピストンロッド32先端に
、厚肉円形(第2図〉の押圧板33を設けたものであり
、上記抑圧板33の上面に沿って設けた支持腕34の両
端には、コイルバネ35により下方へ付勢せしめて上下
動自在に棒状の給電接点36が設けてある。これら給電
接点36は、左端位置に至った上記パレット1の給電接
点15に対向して位置し、それぞれ上記電源8に接続さ
れている。
Directly above the plating chamber 4, a pressing mechanism 3 is fixed to a pedestal 9, and a pressing machine'! f43 is a thick circular pressing plate 33 (see FIG. 2) provided at the tip of a piston rod 32 that extends from the cylinder 31 and moves up and down, and a support arm 34 provided along the upper surface of the suppressing plate 33. Rod-shaped power supply contacts 36 are provided at both ends of the pallet 1, which is biased downward by a coil spring 35 and can be moved up and down. and are connected to the power source 8, respectively.

なお、上記各シリンダ26、31、51の作動端は、そ
れぞれ位置センサ26a、26b、31a、3lb、5
1a、5lbにより検知される。
Note that the operating ends of each of the cylinders 26, 31, and 51 are connected to position sensors 26a, 26b, 31a, 3lb, and 5, respectively.
1a, 5lb.

上記構造のめつき装置の作動を以下に説明する.右端位
置にあるキャリア2には爪体24にパレット1が載置さ
れ、パレット上の各クランプ機構14は、シャフト大径
部144が図略の引張り機構により引張られて後退する
。この状態で、上記パレット1の開口1a内を昇降機構
5の受け台53が上昇して、ロボットアーム54よりウ
ェハWを受け、下降途中で上記ウェハWの下面外周縁を
パレット1のシール13上へ載置する。引張り機構は上
記シャフト大径部144の引張りを解消し、シャフト1
43がコイルバネ142のばね力により進出せしめられ
て、把持板141がウェハWを両側より固定する。ウェ
ハWは外周の一部が直線となっているから、上記固定時
に把持板141に馴染むように回転し、正確に位置決め
される。
The operation of the plating device with the above structure will be explained below. The pallet 1 is placed on the claw body 24 on the carrier 2 located at the right end position, and each clamp mechanism 14 on the pallet is moved back as the shaft large diameter portion 144 is pulled by an unillustrated tension mechanism. In this state, the cradle 53 of the elevating mechanism 5 rises within the opening 1a of the pallet 1, receives the wafer W from the robot arm 54, and in the process of descending, the lower outer peripheral edge of the wafer W is placed on the seal 13 of the pallet 1. Place it on. The tension mechanism eliminates the tension in the large diameter portion 144 of the shaft, and
43 is advanced by the spring force of the coil spring 142, and the gripping plate 141 fixes the wafer W from both sides. Since a part of the outer periphery of the wafer W is a straight line, the wafer W rotates so as to fit into the grip plate 141 when fixed, and is accurately positioned.

ロッドレスシリンダ26によりキャリア2が左方へ移動
せしめられ、めっきチャンバ4の直上位置へ至る。
The carrier 2 is moved to the left by the rodless cylinder 26 and reaches a position directly above the plating chamber 4.

ここで、押圧機構3のロッド31が下降し、下降途中で
給電接点36がパレット1上の受電接点15に当接導通
する。下降した押圧板33はウェハWの上面に当たり、
該ウェハWおよびシール13を介してパレット基板11
を、爪体24の支持力に抗して押し下げる。これにより
、基板11の下面はめつきチャンバ4のシールリング4
3に密着して、開口1aが上記チャンバ4の開口に一致
し、同時に、被めっき面たるウェハW下面がシール13
に密着して、シール13上のカソード電極16に導通す
る。
Here, the rod 31 of the pressing mechanism 3 is lowered, and during the lowering, the power supply contact 36 contacts the power reception contact 15 on the pallet 1 and becomes conductive. The descending press plate 33 hits the top surface of the wafer W,
Pallet substrate 11 via the wafer W and seal 13
is pushed down against the supporting force of the claw body 24. As a result, the seal ring 4 of the chamber 4 is fitted onto the lower surface of the substrate 11.
3, the opening 1a coincides with the opening of the chamber 4, and at the same time, the lower surface of the wafer W, which is the surface to be plated, is in close contact with the seal 13.
The cathode electrode 16 on the seal 13 is electrically connected to the cathode electrode 16 on the seal 13.

三方弁72が作動し、ボンプ7より吐出されるめっき液
を管路75を経て噴流ノズル41に供給すると、めっき
液はアノード電極44より正電荷を受けてめっきチャン
バ4内に噴出し、ウェハWの下面に至ってめっき層を形
成する。
When the three-way valve 72 is activated and the plating solution discharged from the pump 7 is supplied to the jet nozzle 41 through the pipe 75, the plating solution receives a positive charge from the anode electrode 44 and is ejected into the plating chamber 4, and the wafer W is A plating layer is formed on the bottom surface of the plate.

めっき処理終了後、押圧板33を上昇せしめると給電接
点36と受電接点15は分離遮断され、また、抑圧板3
3の上昇に伴って、パレット1は爪板24により上方へ
引き上げられる。キャリア2は再び右端へ戻し移動せし
められ、引張り機横により把持板141の間隔を拡げた
後、昇降機構5の受け台53が上昇して、ウェハW下面
の内周部を押し上げ、ウェハWをパレット1上より取り
出す。
After the plating process is completed, when the pressing plate 33 is raised, the power feeding contact 36 and the power receiving contact 15 are separated and cut off, and the suppressing plate 3
3, the pallet 1 is pulled upward by the claw plate 24. The carrier 2 is moved back to the right end again, and after widening the gap between the gripping plates 141 by the side of the tensioning machine, the pedestal 53 of the lifting mechanism 5 rises and pushes up the inner peripheral part of the lower surface of the wafer W, lifting the wafer W. Take it out from the top of pallet 1.

本実施例によれば、ウェハWの形が変更された場合には
、パレット1を取り替えることにより即座に対応するこ
とができ、各ウェハWに対して専用設備を設ける必要が
ないから、設備費が大幅に低減され、また、ウェハWの
変更に対処する段取り時間も大幅に低減できる。
According to this embodiment, if the shape of the wafer W is changed, it can be dealt with immediately by replacing the pallet 1, and there is no need to provide dedicated equipment for each wafer W, so equipment costs are reduced. In addition, the setup time for dealing with changes in the wafer W can also be significantly reduced.

そして、ウェハWの取出しを、めっきチャンバ4より離
れた位置で昇降機構5により下方より押し上げて行うか
ら、ウェハ破損を効果的に防止することができる。
Since the wafer W is taken out by being pushed up from below by the lifting mechanism 5 at a position away from the plating chamber 4, damage to the wafer can be effectively prevented.

また、定期的な点検を必要とするカソード電極16をパ
レット1に設けたから、電極保守の際に装置全体を停止
せしめる必要がない。
Furthermore, since the cathode electrode 16, which requires periodic inspection, is provided on the pallet 1, there is no need to stop the entire apparatus when maintaining the electrode.

上記実施例では、キャリア2を一台としたが、キャリア
2を複数台設けて順次めっきチャンバ4上へ移動するよ
うになし、それぞれに径の異なるウェハW用のパレット
1を予め設けておけば、ウェハW変更時の段取り時間を
短縮することかてきる。この場合には、パレット1は必
ずしもキャリア2と容易に分離される構造とする必要は
ない。
In the above embodiment, only one carrier 2 is used, but it is possible to provide a plurality of carriers 2 and move them sequentially onto the plating chamber 4, and to provide each carrier with a pallet 1 for wafers W having different diameters in advance. , it is possible to shorten the setup time when changing the wafer W. In this case, the pallet 1 does not necessarily need to be structured so that it can be easily separated from the carrier 2.

めっきチャンバの構造は、第5図に示す如きものでも良
い。図において、めっきチャンバ4内には下方よりめっ
き液の導入管46が挿入され、導入管46の先端には多
孔ノズル45が装着してある。上記チャンバ4の液密性
は、導入管46を挿通する貫通穴周縁と導入管46先端
間を結ぶベローズ47により確保されており、上記導入
管46は、モータ48に連結されて作動するリンク48
4、485とギア481、482,483によりほぼ9
0度の間で往復自転せしめられる。
The structure of the plating chamber may be as shown in FIG. In the figure, a plating solution introduction pipe 46 is inserted into the plating chamber 4 from below, and a porous nozzle 45 is attached to the tip of the introduction pipe 46. The liquid tightness of the chamber 4 is ensured by a bellows 47 that connects the periphery of the through hole through which the introduction tube 46 is inserted and the tip of the introduction tube 46.
4, 485 and gears 481, 482, 483 approximately 9
It is forced to rotate back and forth between 0 degrees.

この状悪で、上記導入管46内に供給されためっき液は
、導入管46内に設けたアノード電極44の通孔を通っ
て上方の多孔ノズル45に至り、シャワー状に噴出せし
められる。
In this situation, the plating solution supplied into the introduction tube 46 passes through the through hole of the anode electrode 44 provided in the introduction tube 46, reaches the upper porous nozzle 45, and is ejected in a shower form.

[発明の効果] 以上の如く、本発明のめつき装置は、同一設備で異なる
径のウェハに対応できるとともに、その対応も速やかに
なすことが可能であり、設備コストの低減と、作業効率
の大幅向上を実現するものである。
[Effects of the Invention] As described above, the plating apparatus of the present invention can handle wafers of different diameters with the same equipment, and can also do so quickly, reducing equipment costs and improving work efficiency. This is a significant improvement.

また、ウェハの取出しをめっきチャンバ上で行う必要が
ないから、ウェハを下方より押上げるような取出し方法
が可能であり、これにより、ウェハの破損を有効に防止
できる。
Furthermore, since it is not necessary to take out the wafer on the plating chamber, it is possible to take out the wafer by pushing it up from below, thereby effectively preventing damage to the wafer.

【図面の簡単な説明】[Brief explanation of drawings]

第1図ないし第4図は本発明の一実施例を示し、第1図
は装置の要部断面全体側面図、第2図は装置要部の破断
斜視図、第3図はパレットの平面図、第4図は第3図の
IV − IV線断面図、第5図はめつきチャンバの他
の例を示す破断斜視図、第6図は従来装置の要部断面全
体側面図である。 1・・・パレット 1a・・・開口 2・・・キャリア 3・・・押圧機構(押圧手段) 4・・・めっきチャンバ 5・・・昇降機構 7・・・ポンプ 8・・・電源 W・・・ウェハ 第3図 第4図 第5図
Figures 1 to 4 show an embodiment of the present invention, with Figure 1 being a cross-sectional overall side view of the main parts of the device, Figure 2 being a cutaway perspective view of the main parts of the device, and Figure 3 being a plan view of the pallet. , FIG. 4 is a sectional view taken along the line IV--IV in FIG. 3, FIG. 5 is a cutaway perspective view showing another example of the plating chamber, and FIG. 6 is a side view of the entire main part of the conventional device in cross section. 1... Pallet 1a... Opening 2... Carrier 3... Pressing mechanism (pressing means) 4... Plating chamber 5... Lifting mechanism 7... Pump 8... Power supply W...・Wafer Figure 3 Figure 4 Figure 5

Claims (1)

【特許請求の範囲】[Claims] ウェハを載置し、載置状態で上記ウェハ下面の被めっき
面を露出せしめる開口を形成したパレットと、該パレッ
トを弾性的に支持し、上方へ開口するめっきチャンバの
開口直上位置と、めっきチャンバより離れた位置との間
で移動するキャリアと、上記キャリアにより上記めっき
チャンバ直上位置へ移送されたウェハを上方より押圧し
て、ウェハの下面外周をパレット開口縁に、パレットの
外周下面をめつきチャンバ開口縁に、それぞれ液密的に
圧接せしめる押圧手段とを具備するめつき装置。
A pallet on which a wafer is placed and has an opening for exposing the lower surface of the wafer to be plated in the placed state; a plating chamber that elastically supports the pallet and opens upward; and a plating chamber. A carrier moves between a more distant position and the wafer transferred by the carrier to a position directly above the plating chamber is pressed from above to plate the outer periphery of the lower surface of the wafer on the opening edge of the pallet and the lower outer periphery of the pallet. A plating device comprising pressing means for bringing each chamber opening edge into liquid-tight pressure contact.
JP1113039A 1989-05-02 1989-05-02 Plating equipment Expired - Fee Related JPH0834211B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1113039A JPH0834211B2 (en) 1989-05-02 1989-05-02 Plating equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1113039A JPH0834211B2 (en) 1989-05-02 1989-05-02 Plating equipment

Publications (2)

Publication Number Publication Date
JPH02292829A true JPH02292829A (en) 1990-12-04
JPH0834211B2 JPH0834211B2 (en) 1996-03-29

Family

ID=14601932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1113039A Expired - Fee Related JPH0834211B2 (en) 1989-05-02 1989-05-02 Plating equipment

Country Status (1)

Country Link
JP (1) JPH0834211B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002173794A (en) * 2000-12-05 2002-06-21 Electroplating Eng Of Japan Co Cup type plating equipment
CN117448927A (en) * 2023-12-26 2024-01-26 苏州智程半导体科技股份有限公司 Anti-fatigue electric ring for wafer electroplating

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63166990A (en) * 1986-12-26 1988-07-11 C Uyemura & Co Ltd Work conveying system for plating treatment device
JPS63166991A (en) * 1986-12-26 1988-07-11 Ngk Insulators Ltd Pallet for work conveyance of plating treatment device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63166990A (en) * 1986-12-26 1988-07-11 C Uyemura & Co Ltd Work conveying system for plating treatment device
JPS63166991A (en) * 1986-12-26 1988-07-11 Ngk Insulators Ltd Pallet for work conveyance of plating treatment device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002173794A (en) * 2000-12-05 2002-06-21 Electroplating Eng Of Japan Co Cup type plating equipment
CN117448927A (en) * 2023-12-26 2024-01-26 苏州智程半导体科技股份有限公司 Anti-fatigue electric ring for wafer electroplating
CN117448927B (en) * 2023-12-26 2024-03-15 苏州智程半导体科技股份有限公司 Anti-fatigue electric ring for wafer electroplating

Also Published As

Publication number Publication date
JPH0834211B2 (en) 1996-03-29

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