JPH02293702A - Production of color filter - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing color filters used in liquid crystal color televisions, COD cameras, and the like.

Conventional Technology Conventionally, a dyeing method has been used to manufacture color filters, but recently a method has been proposed in which a colored photosensitive resin is used in which a pigment is mixed with a photoresist. FIG. 7 shows a cross section of a color filter manufactured by this manufacturing method.

A black photosensitive resin is applied to a transparent substrate (for example, glass) 1, exposed using a photomask, developed, washed with water, and dried to form a black pattern 2. Next, a red photosensitive resin is applied to the transparent substrate 1, exposed using a photomask, developed, washed with water, and dried to form a red pattern 3. The same procedure was repeated to form a green pattern 4 and a blue pattern 5.

Problems to be Solved by the Invention However, the above manufacturing method causes pattern misalignment as shown in FIG. 7, and when the black pattern 1 and the pixel pattern overlap, a protrusion 6 is produced. A transparent conductive film (for example, I
When an electrode (not shown) such as To) is formed, there is a problem in that it comes into contact with an electrode (not shown) of an opposing panel and causes a short circuit (hereinafter referred to as an opposing short circuit). On the other hand, there was a problem in that non-colored areas 7 were created due to misalignment between the patterns, causing light leakage. The reason for this is that following the formation of black pattern 1, it is necessary to form a pixel pattern, and at that time each photomask must be aligned, and the alignment accuracy of a normal exposure machine is ± This was because it was 2 to 3 μm and pattern deviation was unavoidable.

SUMMARY OF THE INVENTION In view of the problems of the conventional color filter manufacturing method, it is an object of the present invention to provide a method for manufacturing a color filter that is free from opposing short circuits and light leakage.

Means for Solving the Problems In the present invention, after coating and drying a resist material in which a black pigment (first pigment) is dispersed on a transparent substrate to form a first coating, the coating is coated from the coated surface side. The first pattern is formed by exposing to light through a photomask placed at a distance between the two, developing and curing the first pattern, and then applying a second resist material with pigment dispersed therein, drying it, and then drying it. Forming a film of 2,
Exposure to light through a photomask, develop and harden the second
The process of forming a pattern is then repeated as many times as necessary.

Function: The present invention eliminates light leakage by overlapping the ends of the black pattern and the pixel pattern. Furthermore, if a mountain-shaped pattern is formed in which the edges of the black pattern are thin and the center is thick, the protrusions at the overlapped portions with pixels will also become smaller, and the rate of opposing short circuits will be reduced.

EXAMPLE Hereinafter, an example of the present invention using a negative resist material will be explained based on the process cross-sectional views of FIGS. 1 to 6.

As shown in FIG. 1, a black resist (product name: Color Mosaic K, manufactured by Fuji Hunt Electronics Technology Co., Ltd.) is coated on a transparent substrate 1 with a spinner to a thickness of about 1 μm, and a film thickness of about 1 μm is applied with a hot plate. Prebaking is performed for 1 minute to form a black resist film 8. Furthermore, polyvinyl alcohol is applied onto the black resist film 8 using a spinner, and prebaking is performed at 100'C for 1 minute on a hot plate to form an oxygen barrier film 9. This is to prevent the bonding of active groups and oxygen during exposure.Next, a photomask 1o was placed with a gap of 20 μm from the coated surface, and exposed at an intensity of 20 mJ/cm2. At this time, the pattern line width of the photomask was 15 μm.
Therefore, it is made thinner than the 20 μm required for an actual resist film.

After exposure, heat on a hot plate at 10°C for 1 minute, then immerse in a 1% by weight sodium carbonate aqueous solution for 1 minute to develop, wash with water, and heat in a 200°C oven at 200°C.
1 Heating for 15 minutes, a black pattern 11 as shown in FIG. 2 is formed.

Next, as shown in Figure 3, a red resist (Color Mosaic R, manufactured by the same company) was applied with a spinner to a film thickness of about 1 μm, pre-baked at 100"C for 1 minute on a hot plate, and the red resist was applied. forming a resist film 12;
Oxygen barrier film 9 is formed in the same manner as when forming the black pattern.

Then, a red photomask 13 (opening = 150 μm) with an opening larger than the distance between black patterns (140 μm) is used.
) and exposed at an intensity of 20 mJ/am2. In the same manner as when forming the black pattern 12, after exposure, heating, development, washing with water, and heating are performed to form the red pattern 14.

Next, as shown in FIG. 4, a green resist (same color mosaic G:
A green pattern 15 and a blue pattern 16 are formed using a blue resist (color mosaic B; manufactured by the same company).

Next, the operation of the configuration of this embodiment will be explained.

First, apply the photomask 10 from the coated surface side and perform exposure with a 20 μm proximity to the resist film. Due to light diffraction, the exposure amount distribution on the resist film will be as shown in Figure 5 (a). Become.

On the other hand, Figure 6 is a graph showing the relationship between exposure amount and film remaining rate. If the resist surface is irradiated with an exposure amount greater than EI, it will not dissolve during development and the film thickness will maintain its initial value (remaining film rate).
1) Below E+, the surface is dissolved by development and the film thickness is reduced (remaining film ratio is 1 or less). From this figure, EI=10mJ
/cm2, so the exposure amount is E in Fig. 5(a).
The film thickness gradually decreases in the area where Eθ is less than 1, and Eθ”7m.
The film disappears at J/cm2. Therefore, the black pattern is the fifth
It has a trapezoidal cross-sectional shape as shown in Figure (b), the length of the base is 20 μm, and a predetermined line width.

When a photomask with a large opening is placed on such a black pattern and exposed to light, the ends of the black pattern and pixel pattern overlap (the overlapping areas transmit less light and become black), and the light is also This will disappear. Further, since the black pattern has thin edges, the protrusions 17 at the overlapping portions are not large.

Effects of the Invention As described above, according to the present invention, it is possible to manufacture a color filter that does not leak light within the accuracy range of mask alignment of an exposure machine and is less likely to cause a short-circuit due to the small protrusions.

[Brief explanation of the drawing]

Figures 1 to 4 are process diagrams showing an example of the method for manufacturing a color filter of the present invention, and Figure 5 (a) shows the process diagram when the black mask in the same example was exposed at a distance of 20 μm from the resist surface. A graph showing the exposure amount distribution on the resist surface, FIG. 5(b) is a cross-sectional view of the black pattern after development, and FIG. 6 shows the relationship between the residual film rate and the exposure amount of the black resist of the same example. The graph and FIG. 7 are cross-sectional views of color filters produced by conventional manufacturing methods. DESCRIPTION OF SYMBOLS 1...Transparent substrate, 6...Protrusion, 10...Black photomask, 11...Black pattern, 14...Red pattern, 15...Green pattern, 16...Blue pattern N, 17...protrusion. Name of agent: Patent attorney Shigetaka Awano and one other person

Claims (3)

[Claims] (1) After coating and drying a resist material in which a first pigment is dispersed on a transparent substrate to form a first film, a photomask is installed from the coated surface side with a distance between the resist material and the film. A process of exposing to light through a photomask, developing and curing to form a first pattern, then applying and drying a resist material in which a second pigment is dispersed to form a second film, and applying a resist material through a photomask. A method for producing a color filter, comprising the steps of exposing, developing and curing to form a second pattern, and repeating the same steps as many times as necessary. (2) The method of manufacturing a color filter according to claim 1, wherein when forming the first pattern, the pattern line width of the photomask is made narrower than the line width required for the coating pattern. (3) The method of manufacturing a color filter according to claim 1, wherein in the step of forming the second and subsequent patterns, the opening of the photomask is made larger than the size required for the film pattern.