JPH0229460U - - Google Patents
Info
- Publication number
- JPH0229460U JPH0229460U JP10631188U JP10631188U JPH0229460U JP H0229460 U JPH0229460 U JP H0229460U JP 10631188 U JP10631188 U JP 10631188U JP 10631188 U JP10631188 U JP 10631188U JP H0229460 U JPH0229460 U JP H0229460U
- Authority
- JP
- Japan
- Prior art keywords
- gallium
- melt
- arsenic
- single crystal
- quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 2
- 229910052785 arsenic Inorganic materials 0.000 claims 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 2
- 239000000155 melt Substances 0.000 claims 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000003708 ampul Substances 0.000 description 2
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案及び従来装置に用いられる石英
アンプルの一例を示す縦断面図である。
１：石英アンプル、２：石英ボート、３：Ｇａ
Ａｓ融液。
FIG. 1 is a longitudinal sectional view showing an example of a quartz ampoule used in the present invention and a conventional device. 1: Quartz ampoule, 2: Quartz boat, 3: Ga
As melt.
Claims (1)
結晶を入れた石英ボートを配置し、他端にはヒ素
を配置して前記ガリウムと前記ヒ素とを真空の高
温状態で反応させて融液とし、該融液を低温処理
して単結晶を製造する砒化ガリウム単結晶製造装
置において、前記石英ボートは、窒素がドーピン
グされた石英よりなることを特徴とする砒化ガリ
ウム単結晶製造装置。 A quartz boat containing gallium and a seed crystal is arranged at one end of a reaction vessel having a circular cross section, and arsenic is arranged at the other end, and the gallium and the arsenic are reacted in a vacuum at high temperature to form a melt, A gallium arsenide single crystal production apparatus for producing a single crystal by low-temperature treatment of the melt, wherein the quartz boat is made of quartz doped with nitrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10631188U JPH0229460U (en) | 1988-08-11 | 1988-08-11 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10631188U JPH0229460U (en) | 1988-08-11 | 1988-08-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0229460U true JPH0229460U (en) | 1990-02-26 |
Family
ID=31339703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10631188U Pending JPH0229460U (en) | 1988-08-11 | 1988-08-11 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0229460U (en) |
-
1988
- 1988-08-11 JP JP10631188U patent/JPH0229460U/ja active Pending
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