JPS54586A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS54586A JPS54586A JP6482877A JP6482877A JPS54586A JP S54586 A JPS54586 A JP S54586A JP 6482877 A JP6482877 A JP 6482877A JP 6482877 A JP6482877 A JP 6482877A JP S54586 A JPS54586 A JP S54586A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- production
- semiconductor device
- semicondctor
- thick
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To make possible the use of a thick semicondctor substrate, shorten heat treatment time and obtain a triple diffusion type PNP transistor by diffusion-forming collector regions with Ga or Al of a large coefficient of diffusion as a P type impurity.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6482877A JPS54586A (en) | 1977-06-03 | 1977-06-03 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6482877A JPS54586A (en) | 1977-06-03 | 1977-06-03 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54586A true JPS54586A (en) | 1979-01-05 |
Family
ID=13269487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6482877A Pending JPS54586A (en) | 1977-06-03 | 1977-06-03 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54586A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6184526U (en) * | 1984-11-06 | 1986-06-04 | ||
| JPS6410668A (en) * | 1987-07-02 | 1989-01-13 | Nec Corp | Npn type bipolar transistor |
-
1977
- 1977-06-03 JP JP6482877A patent/JPS54586A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6184526U (en) * | 1984-11-06 | 1986-06-04 | ||
| JPS6410668A (en) * | 1987-07-02 | 1989-01-13 | Nec Corp | Npn type bipolar transistor |
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