JPH02296345A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH02296345A
JPH02296345A JP1116919A JP11691989A JPH02296345A JP H02296345 A JPH02296345 A JP H02296345A JP 1116919 A JP1116919 A JP 1116919A JP 11691989 A JP11691989 A JP 11691989A JP H02296345 A JPH02296345 A JP H02296345A
Authority
JP
Japan
Prior art keywords
semiconductor element
lead
leads
resin
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1116919A
Other languages
Japanese (ja)
Inventor
Hidekazu Sato
英一 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP1116919A priority Critical patent/JPH02296345A/en
Publication of JPH02296345A publication Critical patent/JPH02296345A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/701—Tape-automated bond [TAB] connectors

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE:To exclude the protrusion of a lead from a lead resin sealing part, and reduce a mounting area, by bending the lead connected with a semiconductor element in an U-shape, and arranging it on an insulating layer on the rear of a semiconductor element, through the side surface of the semiconductor element. CONSTITUTION:A lead 3 connected with an electrode 9 of a semiconductor element 6 is cut, made to pass through the side surface 14 of the semiconductor element, bent in an U-shape, and arranged on the rear 15 of the semiconductor element. A film 1 for retaining the lead acts as an insulating layer, and prevent the short circuitting between the semiconductor element 6 and the lead 3. After that, resin sealing is performed, while outer connection regions 16 of the leads 3 are left. Thereby the leads can be prevented from protruding from the resin sealing part, so that mounting area can be reduced.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の実装構造に関し、さらに詳しくは
半導体装置のリードの配置の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a mounting structure for a semiconductor device, and more particularly to an improvement in the arrangement of leads of a semiconductor device.

〔従来の技術〕[Conventional technology]

半導体装置は、一般にリードフレームに設けたダイパッ
ドに半導体素子を取り付け、半導体素子の外部電極とリ
ードフレームの端子とをそれぞれワイヤで接続し、これ
をエポキシ樹脂の如き熱硬化性樹脂にて樹脂対1]二し
た後各端子を切断して製造している。
Generally, a semiconductor device is manufactured by attaching a semiconductor element to a die pad provided on a lead frame, connecting the external electrodes of the semiconductor element and terminals of the lead frame with wires, and bonding these with a resin pair using a thermosetting resin such as epoxy resin. ]After that, each terminal is cut and manufactured.

ところで、最近では電子機器の小型化、薄型化にともな
い、これに使用する半導体装置も高密度実装するために
、薄くかつ小型の半導体装置の出現が望まれている。こ
のような要請に答えるべく、フィルムキャリアのデバイ
スホールに半導体素子を配設し、通常長方形の半導体素
子の電極とフィルムキャリアのリードとを直接接続し、
これに液状の樹脂(例えばエポキシ樹脂)からなる封市
伺を印刷あるいはポツティングして樹脂対1[−シだ方
式の半導体装置が使用されるようになった。第4図はフ
ィルムキャリアを用いた半導体装置を説明するための平
面図である。図に於て、1は長さ方向に等間隔に、後述
の半導体素子6.6a、6b、6 C%・・・の表面積
より大きい面積のデバイスホール2.2a、2b、2C
1・・・が設けられた厚さ25から125μm程度のフ
ィルムキャリア(以下フィルムという)である。3はフ
ィルム1に設けられた銅の如き導電率の高い厚さ10〜
70μm、幅30〜200μm程度の金属箔からなる多
数のり−ドで、その一部はデバイスホール内に突出して
自由端となっている。4はフィルム1を搬送するための
スプロケット穴である。
Recently, as electronic devices have become smaller and thinner, there has been a desire for thinner and smaller semiconductor devices to be mounted in higher density. In order to meet these demands, a semiconductor element is placed in the device hole of a film carrier, and the electrodes of the usually rectangular semiconductor element are directly connected to the leads of the film carrier.
By printing or potting a seal made of liquid resin (for example, epoxy resin) on this, a resin pair type semiconductor device came to be used. FIG. 4 is a plan view for explaining a semiconductor device using a film carrier. In the figure, 1 indicates device holes 2.2a, 2b, 2C having an area larger than the surface area of semiconductor elements 6.6a, 6b, 6C%, etc., which will be described later, at equal intervals in the length direction.
This is a film carrier (hereinafter referred to as a film) having a thickness of about 25 to 125 μm and provided with 1. 3 is a material with high conductivity such as copper provided on the film 1 with a thickness of 10~
There are many glues made of metal foil with a width of about 70 μm and a width of 30 to 200 μm, some of which protrude into the device hole and become free ends. 4 is a sprocket hole for conveying the film 1.

第5図は上記のようなフィルム1に半導体素子を取り付
ける装置の一例を示す模式図で、半導体素子塔載台5上
に載置された半導体素子6は、位置決めガイド7により
所定の位置に位置決めされる。一方、テープレール8に
ガイドされ、スプロケットにより紙面の垂直方向に送ら
れたフィルム]−は、そのデバイスホール2が半導体素
子6上に達した位置で停止して、半導体素子6に設けた
多数の電極つと、各り−1・′3とをそれぞれ整合させ
る。ついで加熱されたボンディングツール]Oを下降さ
せて各リード3を加圧し、所定の角度にフォーミングし
て各リード3と電極9を接合し接続する。次にフィルム
1を移動してそれぞれリード3を切断し、または第6図
に示す従来の半導体装置の断面図のごとくスキージ印刷
、ボッティング等により半導体素子6及びリード3の一
部を液状の封止樹脂を用いて封止して樹脂封止部1−1
を形成した後、リード3をリード保持用のフィルム1を
含み切断して半導体装置を製造していた。
FIG. 5 is a schematic diagram showing an example of an apparatus for attaching a semiconductor element to the film 1 as described above, in which the semiconductor element 6 placed on the semiconductor element mounting table 5 is positioned at a predetermined position by a positioning guide 7. be done. On the other hand, the film guided by the tape rail 8 and fed in the direction perpendicular to the plane of the paper by the sprocket stops at the position where the device hole 2 reaches the top of the semiconductor element 6, and then Align electrode 1 and electrodes -1 and '3, respectively. Then, the heated bonding tool]O is lowered to apply pressure to each lead 3 and form it at a predetermined angle to bond and connect each lead 3 and the electrode 9. Next, the film 1 is moved to cut each lead 3, or a part of the semiconductor element 6 and the leads 3 are sealed in liquid by squeegee printing, botting, etc., as shown in the cross-sectional view of a conventional semiconductor device shown in FIG. Resin sealing part 1-1 by sealing with sealing resin
After forming the lead 3, the lead 3 including the film 1 for holding the lead is cut to produce a semiconductor device.

上記のようにして製造された半導体装置は第7図に示す
ごとく多数のり一部3をプリンI・配線回路基板1−2
に設けた配線用の端子13にそれぞれ半田付け、あるい
は導電性接着剤、異方性導電シートなどで接続していた
。
As shown in FIG. 7, the semiconductor device manufactured as described above has a large number of glue parts 3 and a printed circuit board 1-2.
The wires were connected to wiring terminals 13 provided on the wires by soldering, conductive adhesive, anisotropic conductive sheet, or the like.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかし前述の従来技術ではリード3が樹脂封止部]]の
外方向に突き出しているために、外方向に突き出したリ
ード分の実装面積が広くなってしまうという問題点を有
する。そこで本発明はこのような問題点を解決するため
に為されたものであり、その目的はフィルムキャリア実
装した半導体装置において半導体素子の裏面に絶縁層を
配置して、半導体素子と接続したリードをU字状に曲げ
て半導体素子の側面を通り半導体素子裏面の絶縁層上に
配置して樹脂封止することにより、リードは樹脂封止部
より突き出すことなくしたがって実装面積も小さくする
ことのできる半導体装置を提供するところにある。
However, in the prior art described above, since the leads 3 protrude outward from the resin sealing part, there is a problem in that the mounting area for the outwardly protruding leads becomes large. The present invention was made to solve these problems, and its purpose is to arrange an insulating layer on the back side of a semiconductor element in a semiconductor device mounted on a film carrier, and to connect leads connected to the semiconductor element. By bending it into a U-shape, passing through the side of the semiconductor element, placing it on the insulating layer on the back of the semiconductor element, and sealing it with resin, the leads do not protrude beyond the resin sealing part, thus reducing the mounting area. It is located where the equipment is provided.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の半導体装置は、半導体素子の裏面に絶縁層を配
置して、半導体素子と接続したリードをU字状に曲げて
半導体素子の側面を通り半導体素子裏面の絶縁層上に配
置して樹脂封止したことを特徴とする。
In the semiconductor device of the present invention, an insulating layer is placed on the back side of the semiconductor element, and the lead connected to the semiconductor element is bent into a U shape, passes through the side of the semiconductor element, and is placed on the insulating layer on the back side of the semiconductor element. It is characterized by being sealed.

〔作 用〕[For production]

本発明の」1記の構成によればリードが樹脂封止部より
突き出すことをな(することができるために、実装面積
を小さくすることが可能である。
According to the structure of item 1 of the present invention, the leads can be prevented from protruding from the resin sealing portion, so that the mounting area can be reduced.

〔実 施 例〕〔Example〕

第1図は本発明の一実施例を説明するための断面図であ
る。3はリード、6は半導体素子てあり、11は樹脂封
止部である。半導体素子6の電極9に接続したり一部3
は、リード3を切断して半導体素子側面14を通りU字
状に曲げて、半導体素子裏面15に配置する。このとき
、リード保持用のフィルム1が絶縁層の役割を果たし、
半導体素子6と、リード3とのショートを防止する働き
をする。この後、リード3の、外部接続範囲16を残し
て樹脂封止を行うことにより、従来の半導体装置に比較
して、受面積の半導体装置ができあがる。また第2図に
示すごとく半導体装T−6の裏面15に、予め、絶縁の
ために、封止樹脂を塗布したり、リード3をU¥状に曲
げる際に、半導体素子6の裏面15とリード3との間に
間隙を設けて成形し樹脂封止の際に間隙を樹脂にて充填
して半導体素子6とのンヨーI・を防止しても同様の効
果を得ることが出来る。第3図は本発明の半導体装置の
実装例であり、上記のごとくして製造された半導体装置
の外部接続範囲]6をそれぞれプリント配線基板12に
設けた配線用の端子]3に半田付け、導電接着剤異方性
導電シートなどで接続して使用することかでき、従来に
比較して実装密度を高くすることが出来る。
FIG. 1 is a sectional view for explaining one embodiment of the present invention. 3 is a lead, 6 is a semiconductor element, and 11 is a resin sealing part. Connected to the electrode 9 of the semiconductor element 6 or partially connected to the electrode 9 of the semiconductor element 6
The lead 3 is cut, passed through the side surface 14 of the semiconductor element, bent into a U-shape, and placed on the back surface 15 of the semiconductor element. At this time, the lead holding film 1 plays the role of an insulating layer,
It serves to prevent short circuits between the semiconductor element 6 and the leads 3. Thereafter, the leads 3 are sealed with resin, leaving the external connection ranges 16, thereby completing a semiconductor device with a larger receiving area than conventional semiconductor devices. In addition, as shown in FIG. 2, sealing resin is applied to the back surface 15 of the semiconductor device T-6 in advance for insulation, and when the leads 3 are bent into a U shape, the back surface 15 of the semiconductor element 6 is A similar effect can be obtained by forming a gap with the lead 3 and filling the gap with resin during resin sealing to prevent interference with the semiconductor element 6. FIG. 3 shows an example of mounting the semiconductor device of the present invention, in which the external connection range of the semiconductor device manufactured as described above is soldered to the wiring terminal 3 provided on the printed wiring board 12, respectively. They can be connected using a conductive adhesive, an anisotropic conductive sheet, etc., and the packaging density can be increased compared to conventional methods.

〔発明の効果〕〔Effect of the invention〕

以上述べたごとく本発明によれば半導体素子の裏面に絶
縁層を設置して、半導体素子と接続したリードを、U字
状に曲げて、半導体素子の側面を通り半導体素子裏面の
絶縁層上に配置し、樹脂封止したことにより、従来の半
導体装置に比較して、リードを樹脂対I]一部より突き
出すことを無くして実装面積を小さく抑えるという効果
を有する。
As described above, according to the present invention, an insulating layer is provided on the back side of a semiconductor element, and the lead connected to the semiconductor element is bent into a U shape and passes through the side of the semiconductor element onto the insulating layer on the back side of the semiconductor element. By arranging the leads and sealing them with resin, it is possible to eliminate the need for the leads to protrude from a portion of the resin pair I and to keep the mounting area small compared to conventional semiconductor devices.

を示す説明図、第6図及び第7図は従来の問題!、′λ
を説明するための断面図である。
The explanatory diagrams, Figures 6 and 7, are conventional problems! ,′λ
FIG. 2 is a sectional view for explaining.

] ・ 2 ・ 3 ・ 6 ・ 9 ・ 1 ] ・ 12 ・ ] 3 ・ 14 ・ 15・ 16・ フィルム デバイスホール リード 半導体素子 電極 樹脂封止部 プリント配線基板 配線用端子 側面 裏面 外部接続範囲】・ 2・ 3・ 6・ 9・ 1   ・ 12・ ] 3 ・ 14・ 15・ 16・ film device hole lead semiconductor element electrode Resin sealing part printed wiring board Wiring terminal side Back side External connection range

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示す断面図、第2図本発明
の他の実施例を示す断面図、第3図は本発明を用いた実
装例の断面図、第4図及び第5図はフィルムキャリアを
用いた半導体装置の製造側出願人 セイコーエプソン株
式会r1 代理人 弁理士 鈴 木 喜三部(他1名)−n 4
FIG. 1 is a sectional view showing one embodiment of the present invention, FIG. 2 is a sectional view showing another embodiment of the invention, FIG. 3 is a sectional view of an implementation example using the present invention, and FIGS. Figure 5 shows the applicant who manufactures semiconductor devices using film carriers: Seiko Epson Co., Ltd. r1 Agent: Patent attorney Kizobe Suzuki (and 1 other person) - n 4

Claims (1)

【特許請求の範囲】[Claims] (1)フィルムキャリアの切り欠き部に半導体素子を配
設し、該半導体素子に設けた多数の電極に前記フィルム
キャリアのリードをそれぞれ接続して前記リードを切断
し、または前記半導体素子及びリードの一部を樹脂等に
より封止したのち前記リードを切断したことからなる半
導体装置に於て、前記半導体素子の裏面に絶縁層を配置
して、該半導体素子と接続した前記リードをU字形状に
曲げて該半導体素子の側面を通り前記半導体素子裏面の
絶縁層上に配置して樹脂封止しかつリードの一部が封止
樹脂より露出していることを特徴とする半導体装置。
(1) A semiconductor element is disposed in a notch of a film carrier, and the leads of the film carrier are connected to a number of electrodes provided on the semiconductor element, respectively, and the leads are cut, or the semiconductor element and the leads are cut. In a semiconductor device in which the leads are cut after being partially sealed with resin etc., an insulating layer is placed on the back surface of the semiconductor element, and the leads connected to the semiconductor element are shaped into a U-shape. 1. A semiconductor device, characterized in that the leads are bent and passed through a side surface of the semiconductor element, placed on an insulating layer on the back surface of the semiconductor element, and sealed with a resin, and a part of the lead is exposed from the sealing resin.
JP1116919A 1989-05-10 1989-05-10 Semiconductor device Pending JPH02296345A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1116919A JPH02296345A (en) 1989-05-10 1989-05-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1116919A JPH02296345A (en) 1989-05-10 1989-05-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH02296345A true JPH02296345A (en) 1990-12-06

Family

ID=14698915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1116919A Pending JPH02296345A (en) 1989-05-10 1989-05-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH02296345A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2762929A1 (en) * 1997-05-02 1998-11-06 Nec Corp SEMICONDUCTOR HOUSING HAVING A SEMICONDUCTOR ELEMENT, A SEMICONDUCTOR HOUSING FIXING STRUCTURE MOUNTED ON A PRINTED CIRCUIT BOARD, AND SEMICONDUCTOR HOUSING ASSEMBLY METHOD
EP0798780A3 (en) * 1996-03-27 2000-09-13 Oki Electric Industry Co., Ltd. Semiconductor device, manufacturing method thereof and aggregate type semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0798780A3 (en) * 1996-03-27 2000-09-13 Oki Electric Industry Co., Ltd. Semiconductor device, manufacturing method thereof and aggregate type semiconductor device
US6208021B1 (en) 1996-03-27 2001-03-27 Oki Electric Industry Co., Ltd. Semiconductor device, manufacturing method thereof and aggregate type semiconductor device
US6403398B2 (en) 1996-03-27 2002-06-11 Oki Electric Industry Co, Ltd. Semiconductor device, manufacturing method thereof and aggregate type semiconductor device
FR2762929A1 (en) * 1997-05-02 1998-11-06 Nec Corp SEMICONDUCTOR HOUSING HAVING A SEMICONDUCTOR ELEMENT, A SEMICONDUCTOR HOUSING FIXING STRUCTURE MOUNTED ON A PRINTED CIRCUIT BOARD, AND SEMICONDUCTOR HOUSING ASSEMBLY METHOD

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