JPH02299221A - Charged particle beam lithography - Google Patents

Charged particle beam lithography

Info

Publication number
JPH02299221A
JPH02299221A JP1120826A JP12082689A JPH02299221A JP H02299221 A JPH02299221 A JP H02299221A JP 1120826 A JP1120826 A JP 1120826A JP 12082689 A JP12082689 A JP 12082689A JP H02299221 A JPH02299221 A JP H02299221A
Authority
JP
Japan
Prior art keywords
data
accuracy
spot size
accordance
patterning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1120826A
Other languages
Japanese (ja)
Inventor
Tatsuhiko Yamao
山尾　達彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP1120826A priority Critical patent/JPH02299221A/en
Publication of JPH02299221A publication Critical patent/JPH02299221A/en
Pending legal-status Critical Current

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  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To perform a highly precise mask-reticle patterning in a short time by a method wherein only the pattern for which accuracy is required is drawn using a charged particle beam of small spot size, and other pattern is drawn using a beam of large spot size. CONSTITUTION:Accuracy rank indicating data 15 are inputted to each unit cell, and when the data are converted into patterning data, first, a unit cell name 14 is read out, then the accuracy rank indicating data 15 are read out. When a data processing table in accordance with accuracy rank is given to the above-mentioned data conversion soft in advance, a data conversion in accordance with accuracy ranks can be conducted. As a result, a patterning in accordance with the required accuracy can be done for every data file. Consequently, necessary data only can be brought into the state of high preciseness in a short time.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、荷電ビームの描画方法に関するものである。[Detailed description of the invention] Industrial applications The present invention relates to a charged beam drawing method.

従来の技術 近年荷電ビーム（特に電子ビーム）は、マスク・レチク
ルのパターン描画の主流な方式となった。半導体パター
ンの微細化に伴い、マスク・レチクルへの要求精度はま
すます厳しくなっている。精度を上げるには、スポット
サイズの小さなビームを用いれば良いが、描画時間が非
常に長（実用的でない。描画パターンのなかには、真に
精度を要求するもの、たとえば、位置検出マーク、合わ
せマークあるいはデバイス上寸法精度の厳しいパターン
と、精度を要求しないもの、たとえば、光のしゃへい用
パターン、スクライブラインパターンあるいは配線引き
出し用パターンとの２つに大別される。2. Description of the Related Art In recent years, charged beams (especially electron beams) have become the mainstream method for drawing patterns on masks and reticles. As semiconductor patterns become finer, precision requirements for masks and reticles are becoming increasingly strict. To improve accuracy, it is possible to use a beam with a small spot size, but the writing time is very long (not practical. Some writing patterns require precision, such as position detection marks, alignment marks, or Patterns are broadly classified into two types: patterns that require strict dimensional accuracy on the device, and patterns that do not require accuracy, such as patterns for light shielding, scribe line patterns, or patterns for drawing out wiring.

発明が解決しようとする課題 従来の描画データフォーマットでは、これらを一階層の
一つのファイルとして扱うので、一つのスポットサイズ
しか選択できず、精度を要求されないパターンまで、構
成度描画を行っている。全てのデータを、精度別に別フ
ァイルにすると、ファイル数が増えパターンの配列座標
が増し、繁雑となる。Problems to be Solved by the Invention In the conventional drawing data format, these are treated as one file in one layer, so only one spot size can be selected, and even patterns that do not require precision are drawn in a structured manner. If all the data is divided into separate files for each precision, the number of files will increase, the number of pattern array coordinates will increase, and the process will become complicated.

本発明は、精度を要求されるパターンのみを小さなスポ
ットサイズの荷電ビームで描画し、他は、大きなスポッ
トサイズのビームで描画し、短時間で高精度なマスク・
レチクル描画を行うことを目的とする。The present invention draws only the patterns that require precision with a charged beam with a small spot size, and draws the rest with a beam with a large spot size, thereby creating a highly accurate mask in a short time.
The purpose is to perform reticle drawing.

課題を解決するための手段 この目的を達成するために本発明の荷電ビーム描画方法
は、データファイルのアーカイブヘッダーに、パターン
精度ランク表示を持たせるものである。Means for Solving the Problems In order to achieve this object, the charged beam drawing method of the present invention includes a pattern accuracy rank display in the archive header of the data file.

作用 この構成によって、データファイル毎に要求精度に応じ
た描画が可能となり、短時間で必要なデータのみ高精度
化することができる。Effect: With this configuration, it is possible to draw according to the required accuracy for each data file, and only the necessary data can be highly accurate in a short time.

実施例 以下、本発明の一実施例について、図面を参照しながら
説明する。近年、荷電ビーム描画データは、第１図のテ
ンタフアイル図のように、データ量の少い、階層型のデ
ータを採用してる。１、は親ファイル、２〜４は子ファ
イルであり、ファイルの最も小さな単位としてユニット
セル５〜１３をもつ。第２図は、ユニットセルデータフ
ァイル形式を示す。第２図中、１４は先頭データでユニ
ットヒル名、１５は精度ランク表示データ、１６はアー
カイブヘッダー、１７は実データである。ユニットセル
毎に精度ランク表示データ１５を入れてお（。このデー
タを描画データに変換する際、まずユニットセル名を読
み、次に１＃度ランク表示データを自動で読む。あらか
じめ、このデータ変換ソフトに、精度ランクに応じた、
データ処理条件テーブルをもたせておく。そして、精度
ランクに応じたデータ変換を行うことができる。EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings. In recent years, charged beam lithography data has adopted hierarchical data with a small amount of data, as shown in the tenter file diagram in FIG. 1 is a parent file, 2 to 4 are child files, each having unit cells 5 to 13 as the smallest unit of the file. FIG. 2 shows the unit cell data file format. In FIG. 2, 14 is the first data and unit hill name, 15 is accuracy rank display data, 16 is an archive header, and 17 is actual data. Enter accuracy rank display data 15 for each unit cell (When converting this data to drawing data, first read the unit cell name, then automatically read the 1# degree rank display data. Depending on the software and accuracy rank,
A data processing condition table is provided. Then, data conversion can be performed according to the accuracy rank.

発明の効果 本発明により、データ変換を行ったデータによって描画
を行うと、例えば、これまですべて０．１μｍスポット
サイズで高精度に描画して長時間を要すものが、必要な
もののみ０．１μｍ描画、精度を要しないものは０．５
μｍスポットサイズを描画となり、スポットサイズを描
画担当者が意識せず自動に使い分けることができ、簡便
で、短時間な高精度荷電ビーム描画を行うことが可能で
ある。Effects of the Invention According to the present invention, when writing is performed using the data that has been converted, for example, what has previously required a long time to draw with high precision with a spot size of 0.1 μm can be reduced to only the necessary 0.1 μm spot size. 1μm drawing, 0.5 for those that do not require precision
A μm spot size is used for drawing, and the spot size can be automatically selected without the person in charge of drawing being aware of it, making it possible to perform simple, short-time, high-precision charged beam drawing.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は階層型データを示したデータファイル図、第２
図は、ユニットセルデータファイル表示図である。 １・・・・・・親ファイル、２〜４・・・・・・子ファ
イル、５〜１３・・・・・・ユニットセル、１４・・・
・・・先頭データ（ユニットセル名）、１５・・・・・
・精度ランクデータ、１６・・・・・・アーカイブヘッ
ダー、１７・・・・・・実データ。 代理人の氏名　弁理士　粟野重孝　ほか１名ｌ・−蜆フ
ァイ】し ｚ、３．４−“子ファイル ５、４．７８．Ｐ、　１０．　Ｉｆ、　１２．　／３−
−ユニソＦ（２し 第　１　図Figure 1 is a data file diagram showing hierarchical data, Figure 2 is a data file diagram showing hierarchical data.
The figure is a unit cell data file display diagram. 1...Parent file, 2-4...Child file, 5-13...Unit cell, 14...
...Start data (unit cell name), 15...
- Accuracy rank data, 16...Archive header, 17...Actual data. Name of agent: Patent attorney Shigetaka Awano and 1 other person l.
-Uniso F (2) Figure 1

Claims (1)

【特許請求の範囲】[Claims] 　荷電ビーム描画データを、階層化されたデータの任意
の従属ファイルに、異ったビームサイズを適用できるよ
うに収納し、同データ順に描画することを特徴とする荷
電ビーム描画方法。A charged beam lithography method characterized in that charged beam lithography data is stored in arbitrary dependent files of hierarchical data so that different beam sizes can be applied, and lithography is performed in the same data order.
JP1120826A 1989-05-15 1989-05-15 Charged particle beam lithography Pending JPH02299221A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1120826A JPH02299221A (en) 1989-05-15 1989-05-15 Charged particle beam lithography

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1120826A JPH02299221A (en) 1989-05-15 1989-05-15 Charged particle beam lithography

Publications (1)

Publication Number Publication Date
JPH02299221A true JPH02299221A (en) 1990-12-11

Family

ID=14795920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1120826A Pending JPH02299221A (en) 1989-05-15 1989-05-15 Charged particle beam lithography

Country Status (1)

Country Link
JP (1) JPH02299221A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005033013A (en) * 2003-07-14 2005-02-03 Hitachi High-Technologies Corp Semiconductor manufacturing system
WO2010109655A1 (en) * 2009-03-27 2010-09-30 株式会社アドバンテスト Electron beam lithography system and electron beam lithographing method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005033013A (en) * 2003-07-14 2005-02-03 Hitachi High-Technologies Corp Semiconductor manufacturing system
WO2010109655A1 (en) * 2009-03-27 2010-09-30 株式会社アドバンテスト Electron beam lithography system and electron beam lithographing method
US8466439B2 (en) 2009-03-27 2013-06-18 Advantest Corp. Electron beam lithography apparatus and electron beam lithography method
JP5475635B2 (en) * 2009-03-27 2014-04-16 株式会社アドバンテスト Electron beam drawing apparatus and electron beam drawing method

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