JPH02299224A - Vapor growth device - Google Patents

Abstract

PURPOSE:To reduce any dust raised in a reactor by a method wherein the surface of a susceptor excluding the part shared by a substrate is covered with a shielding plate making a gap lying between the surface and the shielding plate. CONSTITUTION:The title vapor deposition device is composed of a substrate 1, a susceptor 2, a jig holding the susceptor 2, a reactor 4, a gas leading-in port 5 and a shielding plate 7. At this time, the surface of the susceptor 2 excluding the part shared by the substrate 1 is covered with the shielding plate 7 making a gap lying between the susceptor 2 and the shielding plate 7. Accordingly, the raw gas so far in contact with the susceptor 2 is brought into contact with the shielding plate 7 to make the surface temperature of the shielding plate 7 lower than that of the susceptor 2 due to the existence of the said gap made between them so that the decomposition of the raw gas not contributing to the formation of a deposited film may be restricted thereby the dust raised in the reactor 4 can be reduced.

Description

[Detailed Description of the Invention] (Summary) A susceptor is provided that is placed in a reactor through which a source gas flows to hold and heat a substrate, and a susceptor is provided that uses heat from the substrate to decompose the source gas and form a grown film on the substrate. Regarding the phase growth apparatus, in order to reduce the generation of dust in the reactor, the surface of the susceptor other than the part occupied by the substrate is constructed so as to be covered with a shielding plate with a gap in between.

[Industrial application field]

The present invention relates to a vapor phase growth apparatus that includes a susceptor that is placed in a reactor through which a source gas flows to hold and heat a substrate, and that decomposes the source gas using the heat of the substrate to form a grown film on the substrate.

The above-mentioned vapor phase growth apparatus is used to form a grown film of a semiconductor or the like on a substrate in the manufacture of semiconductor devices, and specifically, MOCVD (metal-organic chemical vapor deposition) is used.
equipment, ALE (atomic layer epitaxy) equipment, etc.

In order to ensure the quality of semiconductor devices, it is desirable to prevent dust from adhering to the grown film.

[Conventional technology]

FIG. 5 is a cross-sectional view of essential parts of a conventional example (chimney type) of a vapor phase growth apparatus, in which 1 is a substrate, 2 is a susceptor, 3 is a jig that supports the susceptor 2, 4 is a reactor, and 5 is reactor 4
6 is a gas exhaust port from the reactor 4.

The susceptor 2 holds the substrate 1 and heats the substrate 1 by raising the temperature using high frequency induction or an internal heater.

In the reactor 4, raw material gas is supplied from a lower gas inlet 5 and flows upward toward an upper gas exhaust port 6, and a susceptor 2 is disposed therein substantially horizontally.

Then, this source gas is decomposed by the heat of the group Fi1 to form a grown film on the substrate l.

[Problem to be solved by the invention]

However, in the apparatus configured as described above, since the susceptor 2 that heats the substrate l is at a high temperature, the raw material gas also decomposes on the exposed surface of the susceptor 2 and becomes dust inside the reactor 4. Not only did it adhere to the walls of the apparatus, contaminating the apparatus, but it also fell due to gravity and was blown up again by the gas flow, adhering to the surface of the base If.

This adhesion to the substrate 1 deteriorates the quality of the semiconductor device being manufactured, and contaminating the device makes maintenance of the device complicated.

Therefore, the present invention provides a vapor phase growth apparatus that includes a susceptor that is placed in a reactor through which a source gas flows to hold and heat a substrate, and that decomposes the source gas using the heat of the substrate to form a grown film on the substrate. The purpose is to reduce the generation of dust inside.

[Means to solve the problem]

The above object is achieved by the vapor phase growth apparatus of the present invention, in which the surface of the susceptor other than the portion occupied by the substrate is covered with a shielding plate with a gap interposed therebetween.

[Function] Due to the presence of the above-mentioned heat insulator, the raw material gas that was previously in contact with the susceptor comes into contact with this shielding plate, and the existence of the above-mentioned gap causes the surface temperature of the shielding plate to be lower than that of the susceptor, so that growth is accelerated. Decomposition of source gas that does not contribute to film formation is suppressed, and dust generation within the reactor is reduced.

〔Example〕

Embodiments of the present invention will be described below with reference to FIGS. 1 to 4. The same reference numerals indicate the same functional objects throughout the figures.

FIG. 1 is a sectional view of a main part of the first embodiment, and this embodiment is obtained by disposing a shielding plate 7 in the apparatus described in FIG. 5.

The shielding plate 7 is made of quartz glass, and covers the substrate l of the susceptor 2.
Covers the surface other than the area occupied by the area with gaps in between. The thickness of the shielding plate 7 is about 1 mm, and the gap size between it and the susceptor 2 is about 1 mm at the side surface of the susceptor 2 and about 5III-mm at the back surface of the susceptor 2. The area around the front surface of the susceptor 2 occupied by the substrate l is obliquely shaved off so that a shielding plate 7 protrudes.

As described above, the presence of the shielding plate 7 suppresses the decomposition of the source gas that does not contribute to the formation of the grown film, thereby reducing the generation of dust within the reactor 4.

Therefore, in this device, dust adhesion to the surface of the substrate 1 is reduced, and the device becomes less dirty, making maintenance easier.

According to the inventor's confirmation, when the growth film of GaAs with a thickness of 0.5 μm is repeatedly formed, when the conventional example shown in FIG. Adhesion was observed, but in the use of this example, at least 3
No dust adhesion was observed for 0 or more times.

FIG. 2 is a cross-sectional view of a main part of a second embodiment, and this embodiment is a conventional vertical device in which raw material gas flows from top to bottom and a susceptor 4 is arranged approximately horizontally. The shielding plate 7 has the same structure as the first embodiment.

In this case as well, the provision of the shielding plate 7 reduces dust adhesion to the surface of the substrate Fi1, and also reduces the amount of dirt on the device, making maintenance easier.

FIG. 3 is a cross-sectional view of a main part of the third embodiment, in which a shielding plate 7 is arranged in a horizontal device in which the source gas flows laterally and the susceptor 4 is arranged almost horizontally. be. The shielding plate 7 has the same gap size with the susceptor 2 on the side surface and the back surface of the susceptor 2, so that the back surface side is in contact with the reactor 4,
The rest of the structure is the same as that of the first embodiment.

In this case as well, the provision of the shielding plate 7 reduces the amount of dust adhering to the surface of the substrate 1, and also reduces the amount of dirt on the device, making maintenance easier.

FIG. 4 is a sectional view of a main part of a fourth embodiment, in which a shielding plate 7 is provided in a barrel-shaped device in which source gas flows from top to bottom.

The shielding plate 7 is made of quartz glass, and covers the substrate 1 of the susceptor 2.
Covers the surface other than the portion occupied by the surface with appropriate gaps.

In this case as well, the provision of the shielding plate 7 reduces the amount of dust adhering to the surface of the substrate 1, and also reduces the amount of dirt on the device, making maintenance easier.

Although the material of the shielding plate 7 is quartz glass in the above description, it is not limited to quartz glass in view of the function of the shielding plate 7.

[Effects of the Invention] As explained above, according to the configuration of the present invention, a susceptor is provided which is disposed in a reactor through which a source gas flows to hold and heat a substrate, and the source gas is decomposed by the heat of the substrate and is placed on the substrate. In a vapor phase growth apparatus that forms a grown film, it is possible to reduce the generation of dust in the reactor, reduce dust adhesion to the substrate surface, and improve the quality of semiconductor devices manufactured. This has the effect of reducing the amount of dirt on the device and simplifying maintenance of the device.

[Brief explanation of drawings]

FIG. 1 is a sectional view of the main part of the first embodiment, FIG. 2 is a sectional view of the main part of the second embodiment, FIG. 3 is a sectional view of the main part of the third embodiment, FIG. 4 is a sectional view of the main part of the fourth embodiment, FIG. 5 is a sectional view of the main part of a conventional example. It is. In the figure, ■ is the board, 5 is a gas inlet port, 6 is a gas exhaust port, 7 is a shielding plate; It is. ) to ffi hLjsha Muimin 1 Shibawoshi dN50 map λ mouth 3rd leg Pavilion 4 Bar 5

Claims (1)

[Claims] The method comprises a susceptor that is placed in a reactor through which source gas flows to hold and heat a substrate, and the surface of the susceptor other than the portion occupied by the substrate is covered with a shielding plate with a gap interposed therebetween. Phase growth device.