JPH02299279A - Oscillation wavelength stabilized semiconductor laser device - Google Patents

Oscillation wavelength stabilized semiconductor laser device

Info

Publication number
JPH02299279A
JPH02299279A JP12065389A JP12065389A JPH02299279A JP H02299279 A JPH02299279 A JP H02299279A JP 12065389 A JP12065389 A JP 12065389A JP 12065389 A JP12065389 A JP 12065389A JP H02299279 A JPH02299279 A JP H02299279A
Authority
JP
Japan
Prior art keywords
semiconductor laser
light
oscillation wavelength
laser device
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12065389A
Other languages
Japanese (ja)
Other versions
JPH0812942B2 (en
Inventor
Yoshihisa Sakai
義久 界
Tetsuhiko Ikegami
池上 徹彦
Shoichi Sudo
昭一 須藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1120653A priority Critical patent/JPH0812942B2/en
Publication of JPH02299279A publication Critical patent/JPH02299279A/en
Publication of JPH0812942B2 publication Critical patent/JPH0812942B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、光通信及び光計測における波長基準として用
いるために、原子または分子気体の共鳴吸収線の波長を
基準にし、レーザ光をその基準に同期させることによっ
て安定化させた発振波長安定化半導体レーザ装置に関す
るものである。
Detailed Description of the Invention [Field of Industrial Application] The present invention uses the wavelength of a resonant absorption line of an atomic or molecular gas as a reference, and uses laser light as a reference for use as a wavelength reference in optical communication and optical measurement. This invention relates to a semiconductor laser device whose oscillation wavelength is stabilized by synchronizing the oscillation wavelength with the oscillation wavelength.

〔従来の技術〕[Conventional technology]

従来の発成波長安定化半導体レーザ装置の一例を第4図
を参照して説明する。このレーザ装置は、第4図に示す
ように、レンズ2を用いて半導体レーザ1の出射光を平
行光にし、気体を封入したガラス管つまり吸収セル3を
通過させた後、その出射光をレンズ4で集光し、受光器
5で光電変換する。そして、この電気信号を帰還回路6
で処理した後、半導体レーザ1に帰還させることによシ
該半導体レーザの発振波長を安定化させるものである。
An example of a conventional wavelength-stabilized semiconductor laser device will be described with reference to FIG. As shown in FIG. 4, this laser device uses a lens 2 to convert the emitted light from a semiconductor laser 1 into parallel light, passes it through a gas-filled glass tube, that is, an absorption cell 3, and then converts the emitted light into a parallel light through a lens. 4 condenses the light, and photodetector 5 performs photoelectric conversion. Then, this electric signal is sent to a feedback circuit 6.
After the treatment, the oscillation wavelength of the semiconductor laser is stabilized by feeding it back to the semiconductor laser 1.

なお第4図中、Tは半導体レーザ1の主要な出射光であ
る。この従来技術においては、吸収セル3として105
1から1m長のものが通常用いられていた。
Note that in FIG. 4, T is the main emitted light of the semiconductor laser 1. In this prior art, the absorption cell 3 is 105
Those with a length of 1 to 1 m were commonly used.

〔発明が解決しようとする!1lill〕しかしながら
、かかる従来の半導体レーザ装置では、上記のような吸
収セル構造を用いた場合、レンズ2及び4.ガスセル3
の微小な位置変化によって光路が乱れ、半導体レーザ1
からの出射光を適切にセル中を通路せしめ、また受光す
るととが困難になるという問題点があった。また、この
問題点を解決する念めK、半導体レーザ、レンズ、セル
、レンズ、受光器を強靭な固定盤上に設置した場合、装
置が大型化、大重量化する等、装置構成上の不都合があ
った。
[Invention tries to solve! [1lill] However, in such a conventional semiconductor laser device, when the absorption cell structure as described above is used, the lenses 2 and 4. gas cell 3
The optical path is disturbed by the minute positional change of the semiconductor laser 1.
There was a problem in that it was difficult to properly pass the emitted light through the cell and to receive the light. In addition, in order to solve this problem, if the semiconductor laser, lens, cell, lens, and photodetector are installed on a strong fixed plate, the device will become larger and heavier, causing problems in the device configuration. was there.

本発明はこのような間物点を解決するためになされたも
ので、小型で光学系の安定性に優れた実用的な発振波長
安定化半導体レーザ装置を提供することを目的とする。
The present invention has been made to solve this problem, and it is an object of the present invention to provide a practical oscillation wavelength stabilized semiconductor laser device that is compact and has an excellent optical system stability.

〔課題を解決するための手段〕[Means to solve the problem]

上記目的を達成するため、本発明は、半導体レーザによ
る光を、特定の波長の光のみを吸収する原子または分子
気体を通過させた後、受光器に至らしめ、この受光器で
の検出光景に対応する電気信号を帰還回路を介して上記
半導体レーザに帰還させることにより、該半導体レーザ
の発振波長を安定化させる半導体レーザ装置において、
上記気体を封入した吸収セルの中に、少なくとも上記半
導体レーザおよび受光器を備えたことを特徴とするもの
である。
In order to achieve the above object, the present invention allows light from a semiconductor laser to pass through an atomic or molecular gas that absorbs only light of a specific wavelength, and then to a photoreceiver. A semiconductor laser device that stabilizes the oscillation wavelength of the semiconductor laser by feeding back a corresponding electric signal to the semiconductor laser via a feedback circuit,
The present invention is characterized in that at least the semiconductor laser and the light receiver are provided in an absorption cell in which the gas is sealed.

〔作 用〕[For production]

したがって、本発明においては、光を発する半導体レー
ザと受光器を、特定の波長光のみを吸収する原子または
分子気体(以下、光吸収性ガスと略称する。)を封入し
た吸収セル内に入れて装置を一体化することにより、光
吸収強度をできるだけ高めるとともに外乱による安定性
のゆらぎを抑えることができる。
Therefore, in the present invention, a semiconductor laser that emits light and a light receiver are placed in an absorption cell filled with an atomic or molecular gas (hereinafter abbreviated as light-absorbing gas) that absorbs only light of a specific wavelength. By integrating the devices, it is possible to increase the light absorption intensity as much as possible and to suppress fluctuations in stability due to external disturbances.

〔実施例〕〔Example〕

以下、本発明を図面に示す実施例に基づいて詳細に説明
する。
Hereinafter, the present invention will be described in detail based on embodiments shown in the drawings.

第1図は本発明の発振波長安定化半導体レーザ装置の基
本構成図で、11は光吸収性ガスを封入した吸収セル、
12は半導体1/−ザ、13は受光器、14は発振波長
安定化用帰還回路である。すなわち、本発明による半導
体レーザ装置は、光吸収性ガスを封入した吸収セル11
内に半導体レーザ12と受光器13を入れて一体的に配
設し、この半導体レーザ12よりの出射光16を該吸収
セル11中の光吸収性ガスを透過させる際に生じる特定
の周波数における光吸収を利用して、その透過光を受光
器13で光電変換した後、この電気信号を帰還回路14
で処理して半導体レーザ12に帰還させることにより、
該半導体レーザの発振波長を安定化させるように構成さ
れている。
FIG. 1 is a basic configuration diagram of the oscillation wavelength stabilized semiconductor laser device of the present invention, in which 11 is an absorption cell filled with a light-absorbing gas;
12 is a semiconductor 1/- laser, 13 is a light receiver, and 14 is a feedback circuit for stabilizing the oscillation wavelength. That is, the semiconductor laser device according to the present invention includes an absorption cell 11 filled with a light-absorbing gas.
A semiconductor laser 12 and a light receiver 13 are put in and integrally arranged inside, and light at a specific frequency is generated when the emitted light 16 from the semiconductor laser 12 is transmitted through the light-absorbing gas in the absorption cell 11. Using absorption, the transmitted light is photoelectrically converted by the photodetector 13, and then this electric signal is sent to the feedback circuit 14.
By processing it with and returning it to the semiconductor laser 12,
It is configured to stabilize the oscillation wavelength of the semiconductor laser.

第2図は本発明に係る発振波長安定化用半導体レーザ装
置の一実施例を説明するための概略図でちゃ、第2図(
a)はその立体的な内部構造図、第2図(b)は同じく
その断面図である。第2図において、21は第1図と同
様の半導体レーザ、22は同じく第1図と同様の受光器
、23はレーザ光を受光器22に集光するための半球レ
ンズ、24は半導体レーザ21と装置内の光吸収性ガス
の温度を制御するためのペルチェ素子であり、このペル
チェ素子24の検出信号は、信号線を介して温度制御装
置(図示せず)に送信されてその温度を一定に制御する
ものとなっている。また、25は安定化された光を皐シ
出すための光ファイバ、26.27はそれぞれ半導体レ
ーザ21と光ファイバ25を固定するための台であり、
これらの構成部品が、光吸収性ガスで気密し次ガラスま
たは金属等で作られた吸収セルとしての箱28に入れら
れて一体化されている。
FIG. 2 is a schematic diagram for explaining an embodiment of a semiconductor laser device for stabilizing the oscillation wavelength according to the present invention.
FIG. 2(a) is a three-dimensional internal structure diagram, and FIG. 2(b) is a sectional view thereof. In FIG. 2, 21 is the same semiconductor laser as in FIG. 1, 22 is the same light receiver as in FIG. 1, 23 is a hemispherical lens for focusing the laser beam on the light receiver 22, and 24 is the semiconductor laser 21 and a Peltier element for controlling the temperature of the light-absorbing gas in the device, and the detection signal of this Peltier element 24 is sent to a temperature control device (not shown) via a signal line to keep the temperature constant. It is designed to be controlled. Further, 25 is an optical fiber for emitting stabilized light, and 26 and 27 are stands for fixing the semiconductor laser 21 and the optical fiber 25, respectively.
These components are sealed together with a light-absorbing gas and then placed in a box 28 as an absorption cell made of glass, metal, or the like.

次に、本実施例の光波長基準用吸収セルを用い九発振波
長安定化半導体レーザ装置の動作を第2図に従って説明
する。
Next, the operation of the nine-oscillation wavelength-stabilized semiconductor laser device using the optical wavelength reference absorption cell of this embodiment will be explained with reference to FIG.

まず、半導体レーザ21よシ出射した出射光16は装置
内に充満した光吸収性ガスを透過し、ある特定の周波数
における光吸収が生じる。このとき、光吸収性ガスを透
過した光強度は第3図のような特性を示す。また、その
吸収ピークにレーザ光の発振周波数を同期させる。しか
して、その透逝光を半球レンズ23で集光し受光器22
で光電変換すると、該受光器22で光電変換した信号1
Tが発振波長安定化用帰還回路14(第1図参照)に送
信されて処理された後、この制御信号18は半導体レー
ザ21への注入電流を調整することにょシ、半導体レー
ザ21の発振波長が吸収セル中の対人気体の吸収線ピー
クに同期され、この波長に安定化される。そして、この
安定光は光ファイバ25の出力として得られる。
First, the emitted light 16 emitted from the semiconductor laser 21 passes through a light-absorbing gas filling the inside of the device, and light absorption occurs at a certain specific frequency. At this time, the intensity of light transmitted through the light-absorbing gas exhibits characteristics as shown in FIG. Furthermore, the oscillation frequency of the laser beam is synchronized with the absorption peak. Then, the transmitted light is collected by a hemispherical lens 23 and transmitted to a light receiver 22.
When photoelectrically converted by the photodetector 22, the photoelectrically converted signal 1
After T is sent to the oscillation wavelength stabilization feedback circuit 14 (see FIG. 1) and processed, this control signal 18 is used to adjust the current injected into the semiconductor laser 21 and adjust the oscillation wavelength of the semiconductor laser 21. is synchronized to the absorption line peak of the anti-aircraft body in the absorption cell and stabilized at this wavelength. This stable light is then obtained as the output of the optical fiber 25.

例えば、第2図の装置構成において、半導体レーザ21
として波長1.5300μmで発振するInGaAsP
系の分布爆速型半導体レーザCDFB型LD)を使用し
、また、レーザ光が光吸収性ガスを透過する距離つ1夛
半導体レーザ21と半球レンズ23間を1謂とし、吸収
気体としてアセチレンをI Torr封入した場合、1
.5315μmの吸収線(半値全幅800MHz、吸収
強度50%)金利用して前記半導体レーザ21を吸収線
に波長同期させた。その結果、この構成系を使い半導体
レーザの中心発振波長の変動をI X to−”ck(
光周波数にして] MHz ) 以下に抑えることがで
きた。
For example, in the device configuration of FIG. 2, the semiconductor laser 21
InGaAsP oscillates at a wavelength of 1.5300 μm as
In addition, the distance between the semiconductor laser 21 and the hemispherical lens 23 is defined as 1, and acetylene is used as the absorbing gas. If Torr is included, 1
.. The semiconductor laser 21 was wavelength-synchronized to the absorption line of 5315 μm (full width at half maximum 800 MHz, absorption intensity 50%) using gold. As a result, using this configuration system, the fluctuation of the central oscillation wavelength of the semiconductor laser can be controlled by
We were able to suppress the optical frequency to below MHz.

なお、光吸収性ガスとしては、アセチレンの他にアンモ
ニアガスやメタンガス、二酸化炭素等を用いても前記機
能と同様の動作原理によって発振波長安定化を行うこと
ができる。
Note that, in addition to acetylene, ammonia gas, methane gas, carbon dioxide, or the like may be used as the light-absorbing gas to stabilize the oscillation wavelength using the same operating principle as described above.

以上、本発明を実施例に基づき具体的に説明したが、本
発明は、上記実施例に限定されるものではなく、その要
旨を逸脱し々い範囲において種々変更可能であることは
言うまでもない。
Although the present invention has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the above-mentioned Examples and can be modified in various ways without departing from the gist thereof.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、光を発する半導体
レーザと受光器を、光吸収性ガスを封入した吸収セル内
に入れて装置を一体化することにより、光吸収強度をで
きるだけ高めるとともに外乱による安定性のゆらぎを抑
えることができるので、半導体レーザの発振波長を極め
て高精度で所定の波長に同期し、安定化することができ
るという効果がある。
As explained above, according to the present invention, a semiconductor laser that emits light and a light receiver are placed in an absorption cell filled with a light-absorbing gas to integrate the device, thereby increasing the light absorption intensity as much as possible and reducing disturbance. Since fluctuations in stability caused by this can be suppressed, the oscillation wavelength of the semiconductor laser can be synchronized with a predetermined wavelength with extremely high precision and stabilized.

!!六、本発明の発振波長安定化半導体レーザ装置は、
光学系の安定性に優れ、小型化できるという利点がある
ことから、コヒーレント光通信における波長標準光源や
光計測における光源として利用できる利点がある。
! ! 6. The oscillation wavelength stabilized semiconductor laser device of the present invention includes:
Since the optical system has excellent stability and can be miniaturized, it has the advantage that it can be used as a wavelength standard light source in coherent optical communication or as a light source in optical measurement.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の発振波長安定化半導体レーザ装置の基
本構成図、第2図は本発明の発振波長安定化半導体レー
ザ装置の一実施例の内部構造図、第3図は上記実施例の
動作説明に供する光吸収性ガスを透過した後の光周波数
に対する光の強度を示す図、第4図は従来の光吸収セル
を用いた見損波長安定化半導体レーザ装置を示す構成ブ
ロック図である。 11・e・・吸収セル、12.21φ・・・半導体レー
ザ、13,22・・・・受光器、14・・Φ・発振波長
安定化用帰還回路、23・・・拳半球レンズ、25・・
−・光ファイバ、26.27・・・・台、28・・・・
箱。 特許出願人 日本電信電話株式会社 代 理 人  山  川  政  樹 第1面 第2図 (CI) (b) 第3= 光闇波教 ・  第4工
FIG. 1 is a basic configuration diagram of the oscillation wavelength stabilized semiconductor laser device of the present invention, FIG. 2 is an internal structure diagram of an embodiment of the oscillation wavelength stabilized semiconductor laser device of the present invention, and FIG. 3 is a diagram of the above embodiment. FIG. 4 is a diagram showing the intensity of light versus optical frequency after passing through a light-absorbing gas to explain the operation. FIG. 4 is a block diagram showing the structure of a lost-wavelength stabilized semiconductor laser device using a conventional light-absorbing cell. . 11・e・Absorption cell, 12.21φ・・Semiconductor laser, 13,22・・・Photodetector, 14・・φ・Feedback circuit for stabilizing the oscillation wavelength, 23・・Fist hemispherical lens, 25・・・
-・Optical fiber, 26.27... stand, 28...
box. Patent Applicant: Nippon Telegraph and Telephone Corporation Agent: Masaki Yamakawa, Page 1, Figure 2 (CI) (b) 3rd = Koyanhakyo, 4th Engineering

Claims (1)

【特許請求の範囲】[Claims] 半導体レーザによる光を、特定の波長の光のみを吸収す
る原子または分子気体を通過させた後、受光器に至らし
め、この受光器での検出光量に対応する電気信号を帰還
回路を介して上記半導体レーザに帰還させることにより
、該半導体レーザの発振波長を安定化させる半導体レー
ザ装置において、上記気体を封入した吸収セルの中に、
少なくとも上記半導体レーザおよび受光器を備えたこと
を特徴とする発振波長安定化半導体レーザ装置。
The light emitted by the semiconductor laser passes through an atomic or molecular gas that absorbs only light of a specific wavelength, and then reaches a photoreceiver, and an electrical signal corresponding to the amount of light detected by the photoreceiver is sent to the above via a feedback circuit. In a semiconductor laser device that stabilizes the oscillation wavelength of the semiconductor laser by feeding back to the semiconductor laser, an absorption cell in which the gas is sealed includes:
An oscillation wavelength stabilized semiconductor laser device comprising at least the above semiconductor laser and a light receiver.
JP1120653A 1989-05-15 1989-05-15 Oscillation wavelength stabilized semiconductor laser device Expired - Fee Related JPH0812942B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1120653A JPH0812942B2 (en) 1989-05-15 1989-05-15 Oscillation wavelength stabilized semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1120653A JPH0812942B2 (en) 1989-05-15 1989-05-15 Oscillation wavelength stabilized semiconductor laser device

Publications (2)

Publication Number Publication Date
JPH02299279A true JPH02299279A (en) 1990-12-11
JPH0812942B2 JPH0812942B2 (en) 1996-02-07

Family

ID=14791558

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1120653A Expired - Fee Related JPH0812942B2 (en) 1989-05-15 1989-05-15 Oscillation wavelength stabilized semiconductor laser device

Country Status (1)

Country Link
JP (1) JPH0812942B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04116173U (en) * 1991-03-26 1992-10-16 横河電機株式会社 Frequency stabilized laser light source

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04116173U (en) * 1991-03-26 1992-10-16 横河電機株式会社 Frequency stabilized laser light source

Also Published As

Publication number Publication date
JPH0812942B2 (en) 1996-02-07

Similar Documents

Publication Publication Date Title
JP4952603B2 (en) Atomic oscillator
US5107512A (en) Frequency stabilization of a laser beam by using a birefrigent body
CN103684449B (en) Atom room module, quantum interference device, electronic equipment and magnetic field control method
CN113805462B (en) CPT chip atomic clock based on topological surface emitting laser and implementation method thereof
EP0446345B1 (en) Radiation source for helium magnetometers
JP2009141048A (en) Optical system and atomic oscillator
JP2761505B2 (en) Wavelength stabilized laser device
CN119087311A (en) Photoelectric signal conversion system of magnetometer
JP2602543B2 (en) Oscillation wavelength stabilized semiconductor laser device
JPH0812942B2 (en) Oscillation wavelength stabilized semiconductor laser device
JPS611077A (en) Semiconductor laser device
RU2073949C1 (en) Frequency-stabilized laser
JPH03129891A (en) Laser oscillation wavelength stabilizing device
JPS6251514B2 (en)
SU1194230A1 (en) Device for stabilizing laser frequency
JPH02234484A (en) Frequency-stabilized light source
JPH02299280A (en) Oscillation wavelength stabilized semiconductor laser device
JP2715484B2 (en) Semiconductor laser device
JP2007027214A (en) Laser beam generator
JPH02119283A (en) Oscillation-wavelength stabilized semiconductor laser apparatus
JPH03273208A (en) Semiconductor laser module
JP2756698B2 (en) Oscillation wavelength stabilized semiconductor laser device
JPS6344783A (en) Frequency stabilizer of laser light source
JPH03178181A (en) Laser diode module
JPH01100403A (en) Light source apparatus for interferometer

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees