JPH0230440Y2 - - Google Patents
Info
- Publication number
- JPH0230440Y2 JPH0230440Y2 JP2313386U JP2313386U JPH0230440Y2 JP H0230440 Y2 JPH0230440 Y2 JP H0230440Y2 JP 2313386 U JP2313386 U JP 2313386U JP 2313386 U JP2313386 U JP 2313386U JP H0230440 Y2 JPH0230440 Y2 JP H0230440Y2
- Authority
- JP
- Japan
- Prior art keywords
- heater
- shield
- substrate
- heat
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000003779 heat-resistant material Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
【考案の詳細な説明】
(a) 技術分野
この考案は基板が順次送られてくる処理室に基
板加熱用のヒーターおよびそのヒーターを覆うヒ
ーターシールドを備えたインライン型成膜製造装
置に関し、特に前記ヒーターシールドの改良に関
する。[Detailed description of the invention] (a) Technical field This invention relates to an in-line film deposition manufacturing apparatus equipped with a heater for heating the substrates and a heater shield covering the heater in a processing chamber into which the substrates are sequentially sent. Concerning improvements to heater shields.
(b) 従来技術とその欠点
処理室に基板加熱用のヒーター及びそのヒータ
ーを覆うヒーターシールドを備えたインライン型
成膜製造装置、例えばインライン型スパツタリン
グ装置では、ヒーターからの直接加熱を防ぐ為に
ヒーターと基板の間に位置するヒーターシールド
を設けている。スパツタリング装置ではヒーター
シールドが更に蒸着物がヒーターに付着するのを
防ぎかつヒーター系の絶縁不良を防ぐ役割も果た
している。第１図はインライン型スパツタリング
装置の要部の断面図を示している。処理室１の壁
面近くにはハロゲンランプからなるランプヒータ
ー２及びそのランプヒーター２を覆うヒーターシ
ールド３が配置されている。またこのヒーターシ
ールド３に対抗して蒸着物４が配置されている。
蒸着物４としては例えばＡ１等が使用される。加
熱対象物である基板５は、この蒸着物４とヒータ
ーシールド３との間をヒーターシールド３に接近
するようにトレー６によつて矢印方向に搬送され
ていく。トレー６は図外のチエーンによつて搬送
される。(b) Prior art and its drawbacks In an in-line film forming apparatus, such as an in-line sputtering apparatus, which is equipped with a heater for heating the substrate and a heater shield covering the heater in the processing chamber, the heater is installed to prevent direct heating from the heater. A heater shield is provided between the board and the board. In sputtering equipment, the heater shield also plays the role of preventing deposits from adhering to the heater and preventing insulation defects in the heater system. FIG. 1 shows a sectional view of essential parts of an in-line sputtering device. A lamp heater 2 made of a halogen lamp and a heater shield 3 covering the lamp heater 2 are arranged near the wall of the processing chamber 1. Further, a vapor deposit 4 is arranged opposite to the heater shield 3.
As the deposit 4, for example, A1 or the like is used. The substrate 5, which is the object to be heated, is conveyed by the tray 6 in the direction of the arrow between the deposit 4 and the heater shield 3 so as to approach the heater shield 3. The tray 6 is conveyed by a chain (not shown).
しかし上記のような構造を有する従来のインラ
イン型半導体プロセス装置では、ヒーターシール
ド３がTiやSUSなど、耐熱性のそれほど高くな
い金属で構成されていたために、ランプヒーター
２による加熱温度が700℃〜800℃位に上げる必要
のある場合、ヒーターシールド３が第２図に示す
ように波状に変形し、図のＰ点で示すようにヒー
ターシールド３と基板５またはトレー６とが処理
室内で接触するトラブルを発生する不都合があつ
た。 However, in conventional in-line semiconductor processing equipment having the above structure, the heater shield 3 is made of a metal such as Ti or SUS that does not have high heat resistance, so the heating temperature by the lamp heater 2 is 700°C or more. When it is necessary to raise the temperature to about 800°C, the heater shield 3 deforms into a wave shape as shown in Figure 2, and the heater shield 3 and the substrate 5 or tray 6 come into contact with each other in the processing chamber as shown at point P in the figure. There was an inconvenience that caused trouble.
(c) 考案の目的
この考案の目的は、ヒーターシールドの材料を
変えることによつて上記の不都合を解消し、加熱
温度が高くても安定して基板５を搬送することの
出来るインライン型半導体プロセス製造装置を提
供することにある。(c) Purpose of the invention The purpose of this invention is to solve the above-mentioned disadvantages by changing the material of the heater shield, and to create an in-line semiconductor process that can stably transport the substrate 5 even at high heating temperatures. Our goal is to provide manufacturing equipment.
(d) 考案の構成
この考案は、半導体ウエハが順次送られてくる
処理室に基板加熱用のヒーター及びそのヒーター
を覆うヒーターシールドを備えたインライン型半
導体プロセス製造装置において、
前記ヒーターシールドをシリコン系耐熱材で構
成したことを特徴とする。(d) Structure of the invention This invention is an in-line semiconductor process manufacturing equipment equipped with a heater for heating the substrate and a heater shield covering the heater in a processing chamber into which semiconductor wafers are sequentially sent. It is characterized by being made of heat-resistant material.
(e) 実施例
シリコン型耐熱材としては例えば不透明石英、
透明石英、耐熱ガラスを使用することができる。
ただしこれらのシリコン系耐熱材を使用すると表
面に膜成形過程での付着膜が経時的に形成されて
くる。このため透明石英では時の経過にしたがつ
て熱線（赤外線等）の透過率が大きく変化（低
下）するために、基板の加熱温度及び温度分布が
一定しなくなる可能性がある。したがつて透明石
英よりも不透明石英のほうが好ましい。また表面
にあらかじめ付着膜が形成されている不透明石英
を使用すれば、時間が経過しても熱線の透過率が
それほど大きく変化することがない。すなわち基
板に対する加熱温度および温度分布をほぼ一定に
保つことができる
このようなシリコン系の耐熱材を使用すること
により、耐熱温度を700℃〜800℃以上に容易に設
定することが出来、ヒーターシールドが熱によつ
て変形するのを防ぐことが出来る。(e) Examples Examples of silicon-type heat-resistant materials include opaque quartz,
Transparent quartz and heat-resistant glass can be used.
However, when these silicon-based heat-resistant materials are used, an adhesion film is formed on the surface over time during the film forming process. For this reason, in transparent quartz, the transmittance of heat rays (infrared rays, etc.) changes (decreases) significantly over time, so that the heating temperature and temperature distribution of the substrate may become inconsistent. Therefore, opaque quartz is preferable to transparent quartz. Furthermore, if opaque quartz is used, on which a film has been previously deposited, the transmittance of heat rays will not change significantly over time. In other words, the heating temperature and temperature distribution for the substrate can be kept almost constant. By using such a silicon-based heat-resistant material, the heat-resistant temperature can be easily set to 700°C to 800°C or higher, and the heater shield can be prevented from being deformed by heat.
なおこの考案はインライン型のスパツタリング
装置のほかCVD装置など他のインライン型プロ
セス装置にも適用することが出来る。 This idea can be applied not only to in-line sputtering equipment but also to other in-line process equipment such as CVD equipment.
(f) 考案の効果
以上のようにこの考案によれば、ヒーターシー
ルドをシリコン系耐熱材で構成したことによつ
て、加熱温度が高くなつても熱変形するのを防ぐ
ことができ、基板がヒーターシールドに接触して
トラブルを発生するのをほぼ完全に防ぐことが出
来る。(f) Effect of the invention As described above, according to this invention, by configuring the heater shield with a silicon-based heat-resistant material, it is possible to prevent thermal deformation even when the heating temperature becomes high, and the substrate can be It is possible to almost completely prevent troubles from coming into contact with the heater shield.
第１図はこの考案の前提となるインライン型ス
パツタリング装置の要部断面図、第２図は従来の
インライン型スパツタリング装置の欠点を説明す
る図である。
２……ランプヒーター、３……ヒーターシール
ド、５……基板（加熱対象物）。
FIG. 1 is a cross-sectional view of a main part of an in-line sputtering device, which is the premise of this invention, and FIG. 2 is a diagram illustrating the drawbacks of the conventional in-line sputtering device. 2...Lamp heater, 3...Heater shield, 5...Substrate (heated object).
Claims (1)
ヒーター及びヒーターを覆うヒーターシールドを
備えたインライン型成膜製造装置において、 前記ヒーターシールドをシリコン系耐熱材で構
成したことを特徴とするインライン型成膜製造装
置。[Scope of Claim for Utility Model Registration] In an in-line film deposition manufacturing apparatus equipped with a heater for heating the substrates and a heater shield covering the heater in a processing chamber into which the substrates are sequentially sent, the heater shield is made of a silicon-based heat-resistant material. This is an in-line film deposition manufacturing device that is characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2313386U JPH0230440Y2 (en) | 1986-02-19 | 1986-02-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2313386U JPH0230440Y2 (en) | 1986-02-19 | 1986-02-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62136565U JPS62136565U (en) | 1987-08-28 |
| JPH0230440Y2 true JPH0230440Y2 (en) | 1990-08-16 |
Family
ID=30821171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2313386U Expired JPH0230440Y2 (en) | 1986-02-19 | 1986-02-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0230440Y2 (en) |
-
1986
- 1986-02-19 JP JP2313386U patent/JPH0230440Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62136565U (en) | 1987-08-28 |
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