JPH02304904A - Platinum thin film temperature sensor and manufacture of same - Google Patents
Platinum thin film temperature sensor and manufacture of sameInfo
- Publication number
- JPH02304904A JPH02304904A JP12416189A JP12416189A JPH02304904A JP H02304904 A JPH02304904 A JP H02304904A JP 12416189 A JP12416189 A JP 12416189A JP 12416189 A JP12416189 A JP 12416189A JP H02304904 A JPH02304904 A JP H02304904A
- Authority
- JP
- Japan
- Prior art keywords
- film
- platinum
- nickel
- thin film
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title claims abstract description 74
- 229910052697 platinum Inorganic materials 0.000 title claims abstract description 37
- 239000010409 thin film Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims 3
- 239000010408 film Substances 0.000 claims abstract description 64
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 229910052742 iron Inorganic materials 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 48
- 229910052759 nickel Inorganic materials 0.000 claims description 23
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 14
- 229910052804 chromium Inorganic materials 0.000 claims description 14
- 239000011651 chromium Substances 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 8
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052863 mullite Inorganic materials 0.000 abstract description 5
- 229910052573 porcelain Inorganic materials 0.000 abstract description 5
- 239000003990 capacitor Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 239000000615 nonconductor Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- 229910002064 alloy oxide Inorganic materials 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】 [産業上の利用分野] 本発明は、温度測定装置や電子回 路の温度補償などに用いられる白 金薄膜温度センサに関するもので あ る。[Detailed description of the invention] [Industrial application field] The present invention provides temperature measurement devices and electronic circuits. White used for road temperature compensation, etc. Regarding gold thin film temperature sensor be.
[従来の技術及び問題点コ 従来の白金4膜温度センサは、 セ ラミック等の電気絶縁体の表面に スパッタ 法などにより白金4膜 を形成している。 このようにし て得られた白金薄膜温度センサは 膜厚が薄くなると電気的過負荷に 弱い傾向があった。又皮膜が厚い 場合には電気絶縁体から剥離し易 くなる傾向があった。[Conventional technology and problems The conventional platinum 4-film temperature sensor On the surface of electrical insulators such as lamic 4 platinum films by sputtering method etc. is formed. Do it like this The platinum thin film temperature sensor obtained by When the film thickness becomes thinner, electrical overload occurs. There was a weak tendency. Also, the film is thick In some cases, it is easy to peel off from electrical insulators. There was a tendency to
本発明は、従来の白金茸膜温度セ ンサの特性を損なうことなく、 電 気的過負荷に対する特性を改善す るとともに皮膜と電気絶縁体と密 着強度を上げ皮 膜の剥離を防ご うとするものである。The present invention improves the conventional platinum mushroom membrane temperature sensor. without compromising the characteristics of the sensor. to improve the characteristics against air overload. At the same time, the film and electrical insulator are tightly bonded. Increases adhesion strength and prevents peeling of the skin film. It is intended to be
[問題点を解決するための手段] 従来の方法で、 白金を電気絶縁性 基体上に着膜して得られた膜厚の 薄い白金薄膜温度センサは、 電気 的過負荷に弱く、皮膜が電気絶縁 体からはがれ易い欠点がある。[Means for solving problems] Using conventional methods, platinum can be made electrically insulating. The thickness of the film deposited on the substrate The thin platinum film temperature sensor The film is electrically insulating. It has the disadvantage that it easily peels off from the body.
本発明は、 電気絶縁性基体表面に
まず鉄またはクロムまたはニッケ
ルまたはニッケル系合金薄膜を着
膜してこれを酸化させた後、 この
酸化膜の上に白金を着膜し、熱処
理を施してlf!l温抵抗膜を得ることに依って、 ま
た電気絶縁性基体表
面にまず鉄またはクロムまたはニ
ッケルまたはニッケル系合金薄膜
を着膜し、 この皮膜の上に白金を
着膜し、 熱処理を施して感温抵抗
膜を得ることに依って上記の問題
を解決したもので ある。In the present invention, a thin film of iron, chromium, nickel, or a nickel-based alloy is first deposited on the surface of an electrically insulating substrate and then oxidized, and then a platinum film is deposited on the oxide film and heat treated to form an lf ! By obtaining a temperature resistance film, a thin film of iron, chromium, nickel, or a nickel-based alloy is first deposited on the surface of an electrically insulating substrate, and then platinum is deposited on top of this film, which is then heat-treated. The above problem was solved by creating a temperature resistance film.
[実施例1コ 本発明の実施例を第1図に基づい てtjt明する。[Example 1 The embodiment of the present invention is based on FIG. I will explain it to you.
この実施例に於いては、 直径1.5 3mmで長さ6.0mmのムライト 系磁器を電気絶縁性基体1とし、 その表面に、 マグネトロンスパッ タ法により鉄を被着した後、 大気 中でこれを1000”Cに加熱して 該膜を酸化[2とする(第一の工 程)。In this example, the diameter is 1.5 Mullite of 3mm and length 6.0mm system porcelain as the electrically insulating substrate 1, On its surface, there is a magnetron spatula. After depositing iron using the ta method, atmospheric Heat this to 1000"C inside The film is oxidized [2 (first step) degree).
ついで、 上記酸化膜2の上に、 マ グネトロンスパッタ法に依って白 金膜3を3000人被着する。Next, a matrix is placed on top of the oxide film 2. White by Gnetron sputtering method Gold film 3 was applied to 3,000 people.
(第二の工程)
上記第−及び第二の工程に依って
形成された膜には、所定の抵抗膜
度係数を得るために1050℃で
熱処理を施す、 熱処理後、 内径
1.5mm、 高さ1.4mm、 厚さ0.25 m
mの鉄に錫メッキ を施したキャップを両端に挿入し
て
電極4とする。 レーザ光により、
ピッチ150μm、溝@60μm
のスパイラル溝5を所定の抵抗値
になるまで入れてから、 直径0.6
5mmの半田メッキを施し た軟鋼
線をリード線6として、 両端の電
N4に溶接する。 最後に、 基体及
び電極にエポキシ系塗料によるコ
ーティング膜7を施して、 白金覆
膜温度センサを得る。 第一工程で
被着する材料はクロムまたはニラ
ケルまたはニッケル系合金でも可
能である。(Second step) The film formed in the above-mentioned first and second steps is heat treated at 1050°C to obtain a predetermined resistance film coefficient. After the heat treatment, the film has an inner diameter of 1.5 mm and a high length 1.4mm, thickness 0.25m
Electrodes 4 are made by inserting caps made of tin-plated iron into both ends. Using a laser beam, insert a spiral groove 5 with a pitch of 150 μm and a groove @ 60 μm until the specified resistance value is reached, and then use a solder-plated mild steel wire with a diameter of 0.65 mm as the lead wire 6, and connect it to the electrical N4 at both ends. Weld. Finally, a coating film 7 made of epoxy paint is applied to the substrate and electrodes to obtain a platinum-coated temperature sensor. The material deposited in the first step can also be chromium or Nilacel or a nickel-based alloy.
このようにして作成した試料(試 料A)の10個について特性試験 を行い結果の平均値を求めたとこ ろ表1に示す値を得た。比較のた め同一膜厚、 同一形状に仕上げた 従来品(試料C)の10個につい ても同様な試験を行ったところ、 結果の平均値は表1に示す値を得 た。Samples prepared in this way (sample Characteristic test for 10 pieces of material A) and calculated the average value of the results. The values shown in Table 1 were obtained. For comparison Same film thickness and same shape. Regarding 10 pieces of conventional product (sample C) When we conducted a similar test, The average value of the results is shown in Table 1. Ta.
試験条件
抵抗温度係数は、 0℃と100℃の油中に於ける試料
の抵抗値をそれぞれ測
定し、計算により1℃当りの抵抗値変
化率を求めた。耐パルス電圧は、 試料にパルス電圧を
印加し、 抵抗値変化が2%を越えるときの電圧値を求
めた。Test conditions The temperature coefficient of resistance was determined by measuring the resistance of the sample in oil at 0°C and 100°C, and calculating the rate of change in resistance per 1°C. Pulse voltage resistance was determined by applying a pulse voltage to the sample and determining the voltage value when the resistance value change exceeded 2%.
パルス電圧の印加は、 100pFのコンデンサに直流
電圧を加えて充電した
後、 該コンデンサを電源から切り放し、その両端電圧
を試料の両端に印加する
方法により行った。The pulse voltage was applied by applying a DC voltage to a 100 pF capacitor to charge it, then disconnecting the capacitor from the power supply, and applying the voltage across the capacitor to both ends of the sample.
[実施例2] 本発明の実施例を第1図に基づε)で説明する。[Example 2] An embodiment of the present invention will be described with reference to ε) based on FIG.
この実施例に於いては、 直径1.53mmで長さ6.
0mmのムライト系磁
器を電気絶縁性基体1とし、 その表面に、 マグネト
ロンスパッタ法により鉄または、 クロムまたはニッケ
ルまたはニッケル系合金を被着した後、大気中
でこれを1000℃に加熱して該膜を
酸化膜2とする(第一の工程)。In this example, the diameter is 1.53 mm and the length is 6.5 mm.
A 0 mm thick mullite porcelain is used as the electrically insulating substrate 1. Iron, chromium, nickel or a nickel alloy is deposited on the surface by magnetron sputtering, and then heated to 1000°C in the atmosphere to form the film. is used as the oxide film 2 (first step).
ついで、上記酸化膜2の上に、 マグネトロンスパッタ
法に依って白金膜3を
2μm被着する。 (第2の工程)
上記第−及び第二の工程に依って形成
された膜には、 所定の抵抗温度係数を得るために10
50℃で熱処理を施す。Next, a 2 μm thick platinum film 3 is deposited on the oxide film 2 by magnetron sputtering. (Second step) In order to obtain a predetermined temperature coefficient of resistance, the film formed in the above-mentioned first and second steps was
Heat treatment is performed at 50°C.
熱処理後、 内径1.5mm、高さ1.4mm、 厚さ
0.25mmの鉄に錫メッキを施したキャップを両端に
押入して電
極4と する、 レーザ光により、 ピッチ150μm
、溝幅60μmのスパイ
ラル溝5を所定の抵抗値になるまで入
れた。 この後、 白金vii膜の外観状態を観察した
ところ白金薄膜の絶縁性基体
からの剥離はみられなかった。After heat treatment, caps made of tin-plated iron with an inner diameter of 1.5 mm, a height of 1.4 mm, and a thickness of 0.25 mm are pushed into both ends to form the electrodes 4. The electrodes are heated with a laser beam at a pitch of 150 μm.
A spiral groove 5 having a groove width of 60 μm was inserted until a predetermined resistance value was reached. Thereafter, when the appearance of the platinum VII film was observed, no peeling of the platinum thin film from the insulating substrate was observed.
比較のため同−膜厚、 同一形状に仕上げた従来品の1
00個についてちレー
ザ光により、 ピッチ150μm、 溝@60μmのス
パイラル溝5を所定
の抵抗値になるまで入れた。 この後。For comparison, here is a conventional product with the same film thickness and the same shape.
00 pieces, spiral grooves 5 with a pitch of 150 μm and grooves @60 μm were formed using a laser beam until a predetermined resistance value was reached. After this.
白金薄膜の外観状態を観察したところ 白金薄膜の絶縁性基体からの剥離が 13個見られた。第一工程で被着する 材料はクロムまたはニッケルまたはニ ッケル系合金でも可能である。Observation of the appearance of the platinum thin film Peeling of platinum thin film from insulating substrate I saw 13 of them. Deposited in the first step The material is chromium or nickel or It is also possible to use nickel-based alloys.
[実施例3] 本発明の実施例を312図に基づいて説明する。[Example 3] An embodiment of the present invention will be described based on FIG.
この実施例に於いては、直径1.53
mmで長さ6.0mmのムライト系磁
器を電気絶縁性基体1とし、 その表面に、 マグネト
ロンスパッタ法により鉄を被着し皮膜2とする。In this embodiment, an electrically insulating substrate 1 is made of mullite porcelain having a diameter of 1.53 mm and a length of 6.0 mm, and iron is deposited on the surface thereof to form a coating 2 by magnetron sputtering.
(第一の工程)。(First step).
ついで、上記皮膜2の上に、 マグネトロンスパッタ法
に依って白金g3を被
着する。 (iJ2の工程)
上記第−及び第二の工程に依って形成
された膜には、所定の抵抗温度係数を
得るために1050℃で熱処理を施す。Next, platinum G3 is deposited on the film 2 by magnetron sputtering. (Step iJ2) The films formed in the above-mentioned first and second steps are subjected to heat treatment at 1050° C. in order to obtain a predetermined temperature coefficient of resistance.
熱処理後、 内径1.5mm、 高さ1.4m m、
厚さ0.25mmの鉄に錫メッキを施したキャップ
を両側に挿入して電
極4と する、 レーザ光により、 ピッチ150μm
、 溝幅60μmのスパイラル溝5を所定の抵抗値にな
るまで入
れてから、 直径0.65mmの半田メッキを施し た
軟#l線をリード線6として、両端の電41i4に溶接
する。最後に、基体及び電極にエポキシ系塗料によるコ
ーテイング膜7を施して、 白金薄膜温度センサを得る
。第一工程で被着する
材料はクロムまたはニッケルまたはニ
ッケル系合金でも可能である。After heat treatment, inner diameter 1.5mm, height 1.4mm,
Caps made of tin-plated iron with a thickness of 0.25 mm are inserted on both sides to form the electrodes 4, and the pitch is 150 μm using a laser beam.
After inserting a spiral groove 5 with a groove width of 60 μm until a predetermined resistance value is reached, a solder-plated soft #l wire with a diameter of 0.65 mm is used as a lead wire 6 and welded to the wires 41i4 at both ends. Finally, a coating film 7 made of epoxy paint is applied to the substrate and electrodes to obtain a platinum thin film temperature sensor. The material deposited in the first step can also be chromium or nickel or a nickel-based alloy.
このようにして作成した試料(試料B)の1011につ
いて特性試験を行い結果の平均値を求めたところ表1に
示す値
を得た。比較のため同−膜厚、 同一形状に仕上げた従
来品(試料C)の10
個についても同様な試験を行フなとこ
ろ、結果の平均値は表1に示す値を得
た。Characteristic tests were conducted on 1011 of the samples thus prepared (sample B), and the average values of the results were determined, and the values shown in Table 1 were obtained. For comparison, a similar test was conducted on 10 conventional products (sample C) finished in the same thickness and shape, and the average values shown in Table 1 were obtained.
試験条件
抵抗温度係数は、 0℃と100℃の油中に於ける試料
の抵抗値をそれぞれ測
定し、 計算により1℃当りの抵抗値変化率を求めた。Test conditions The temperature coefficient of resistance was determined by measuring the resistance of the sample in oil at 0°C and 100°C, and calculating the rate of change in resistance per 1°C.
耐パルス電圧は、 試料にパルス電圧を印可し、抵抗値
変化が
2%を越えるときの電圧値を求めた。The pulse voltage withstand was determined by applying a pulse voltage to the sample and determining the voltage value when the resistance value change exceeded 2%.
パルス電圧の印加は、 100pFのコンデンサに直流
電圧を加えて充電した
後、 該コンデンサを電源から切り放し、その両端電圧
を試料の両側に印加する
方法により行った。The pulse voltage was applied by applying a DC voltage to a 100 pF capacitor to charge it, then disconnecting the capacitor from the power supply, and applying the voltage across the capacitor to both sides of the sample.
[実施例4コ 本発明の実施例を第2図に基づいて説 明する。[Example 4 An embodiment of the present invention will be explained based on FIG. I will clarify.
この実施例に於いては、直径1,53
mmで長さ6.0mmのムライト系磁
器を電気絶縁性基体1とし、その表面
に、 マグネトロンスパッタ法により100人の鉄また
は、 クロムまたはニッケルまたはニッケル系合金を被
着する
(jl−の工程)。In this example, mullite porcelain with a diameter of 1,53 mm and a length of 6.0 mm is used as the electrically insulating substrate 1, and 100 pieces of iron, chromium, nickel, or nickel are deposited on the surface by magnetron sputtering. A series alloy is deposited (step jl-).
ついで、上記酸化膜2の上に、 マグネトロンスパッタ
法に依って白金膜3を
2μm彼着する。 (@2の工程)
上記第−及び第二の工程に依って形成
された膜には、所定の抵抗温度係数を
得るために1050℃で熱処理を施す。Next, a 2 μm thick platinum film 3 is deposited on the oxide film 2 by magnetron sputtering. (Step @2) The films formed in the above-mentioned first and second steps are subjected to heat treatment at 1050° C. in order to obtain a predetermined temperature coefficient of resistance.
熱処理後、 内径1.5mm、高さ1.4m m、
厚さQ、25mmの鉄に錫メッキを施したキャップを両
端に挿入して電
!!!4と する、 レーザ光により、 ピッチ150
μm、溝幅60μmのスパイ
ラル溝5を所定の抵抗値になるまで入
れた。 この後、 白金4膜の外観状態を観察したとこ
ろ白金薄膜の絶縁性基体
からの剥離はみられなかった。After heat treatment, inner diameter 1.5mm, height 1.4mm,
Insert caps made of tin-plated iron with thickness Q and 25 mm into both ends and turn on the electricity! ! ! 4, the pitch is 150 using laser light.
A spiral groove 5 having a groove width of 60 μm and a groove width of 60 μm was inserted until a predetermined resistance value was reached. Thereafter, when the appearance of the platinum 4 film was observed, no peeling of the platinum thin film from the insulating substrate was observed.
比較のため同一層厚、 同一形状に仕上げた従来品の1
00個についても
レーザ光により、 ピッチ150μm。For comparison, the conventional product 1 has the same layer thickness and the same shape.
For 00 pieces, the pitch was 150μm using laser light.
溝@60μmのスパイラル溝5を所定
の抵抗値になるまで入れた。 この後、白金薄膜の外観
状態を観察したところ
白金薄膜の絶縁性基体からの剥離が
13111見られた。1!一工程で被着する材料はクロ
ムまたはニッケルまたはニ
ッケル系合金でも可能である。A spiral groove 5 of 60 μm was inserted until a predetermined resistance value was reached. Thereafter, when the appearance of the platinum thin film was observed, 13111 pieces of peeling of the platinum thin film from the insulating substrate was observed. 1! The material deposited in one step can also be chromium or nickel or a nickel-based alloy.
[本発明の効果]
実施例1〜実施例4の結果から明らかなように、 本発
明にかかわる実施例の白金薄膜温度センサは、 膜厚に
かかわらず抵、 抗値及び抵抗温度係数で従来の特性を
持ち、 しかも感温抵抗膜の膜厚が薄くとも電気的過負
荷に対する特性を大幅に向上せしめるという優れた効果
を実現したものである。 また膜厚が厚い場合に起こり
易い絶縁基体からの白金皮膜の剥離防止を実現したもの
である。[Effects of the present invention] As is clear from the results of Examples 1 to 4, the platinum thin film temperature sensor of the Examples according to the present invention has the following advantages in terms of resistance, resistance value, and temperature coefficient of resistance, regardless of the film thickness. Moreover, even if the thickness of the temperature-sensitive resistive film is thin, it has achieved the excellent effect of significantly improving the characteristics against electrical overload. Furthermore, the platinum film is prevented from peeling off from the insulating substrate, which tends to occur when the film is thick.
第−図及び第二図は、 本発明の実施
例である感温電気抵抗体の断面図を示すものであって、
図中の各符号は、 それぞれ下記のものを示す。
1: 電気絶縁抵抗体
2: 鉄またはクロムまたはニッケル
またはニッケル系合金酸化膜
3: 白金感温抵抗膜
4: キャップ電極
5: スパイラル溝
6: リード線
7:コーテイング膜
8: 鉄またはクロムまたはニッケル
またはニッケル系合金膜
坂l 試験結果Figures 1 and 2 are cross-sectional views of a temperature-sensitive electrical resistor according to an embodiment of the present invention.
Each symbol in the figure indicates the following. 1: Electrical insulation resistor 2: Iron or chromium or nickel or nickel-based alloy oxide film 3: Platinum temperature-sensitive resistance film 4: Cap electrode 5: Spiral groove 6: Lead wire 7: Coating film 8: Iron or chromium or nickel or Nickel alloy film slopel test results
Claims (1)
はニッケル系合金の酸化皮膜層を有し、該酸化膜層の上
に白金の感温抵抗薄膜層を有することを特徴とする白金
薄膜温度センサ 2、電気絶縁性基体の表面に500Å以下の鉄、クロム
、ニッケルまたはニッケル系合金の皮膜層を有し、該皮
膜層の上に白金の感温抵抗薄膜層を有することを特徴と
する白金薄膜温度センサ 3、電気絶縁性基体の表面に鉄、クロム、ニッケルまた
はニッケル系合金の膜を形成した後、これを酸化させる
第一の工程と、この酸化膜の上に白金の膜を形成して感
温膜とする第二の工程からなる白金薄膜温度センサの製
造方法 4、電気絶縁性基体の表面に、500Å以下の鉄、クロ
ム、ニッケルまたはニッケル系合金の膜を形成する第一
の工程と、この皮膜の上に白金の膜を形成して感温膜と
する第二の工程からなる白金薄膜温度センサの製造方法[Claims] 1. Having an oxide film layer of iron, chromium, nickel, or a nickel-based alloy on the surface of an electrically insulating substrate, and having a temperature-sensitive resistance thin film layer of platinum on the oxide film layer. A platinum thin film temperature sensor 2 characterized by having a film layer of iron, chromium, nickel or a nickel alloy of 500 Å or less on the surface of an electrically insulating substrate, and having a temperature sensitive resistance thin film layer of platinum on the film layer. The platinum thin film temperature sensor 3 is characterized by a first step of forming a film of iron, chromium, nickel or a nickel-based alloy on the surface of an electrically insulating substrate, and then oxidizing the film; Manufacturing method 4 of a platinum thin film temperature sensor, which comprises a second step of forming a platinum film to form a temperature-sensitive film, a film of iron, chromium, nickel or a nickel-based alloy with a thickness of 500 Å or less is formed on the surface of an electrically insulating substrate. A method for manufacturing a platinum thin film temperature sensor comprising a first step of forming a platinum film and a second step of forming a platinum film on this film to form a temperature sensitive film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12416189A JPH02304904A (en) | 1989-05-19 | 1989-05-19 | Platinum thin film temperature sensor and manufacture of same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12416189A JPH02304904A (en) | 1989-05-19 | 1989-05-19 | Platinum thin film temperature sensor and manufacture of same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02304904A true JPH02304904A (en) | 1990-12-18 |
Family
ID=14878453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12416189A Pending JPH02304904A (en) | 1989-05-19 | 1989-05-19 | Platinum thin film temperature sensor and manufacture of same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02304904A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104458046A (en) * | 2014-12-10 | 2015-03-25 | 中国航天空气动力技术研究院 | Platinum film resistor manufacturing method |
| CN112880852A (en) * | 2021-01-07 | 2021-06-01 | 上海交通大学 | High-temperature platinum film resistor temperature sensor and preparation method thereof |
-
1989
- 1989-05-19 JP JP12416189A patent/JPH02304904A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104458046A (en) * | 2014-12-10 | 2015-03-25 | 中国航天空气动力技术研究院 | Platinum film resistor manufacturing method |
| CN112880852A (en) * | 2021-01-07 | 2021-06-01 | 上海交通大学 | High-temperature platinum film resistor temperature sensor and preparation method thereof |
| CN112880852B (en) * | 2021-01-07 | 2023-02-24 | 上海交通大学 | High-temperature platinum film resistor temperature sensor and preparation method thereof |
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