JPH02306584A - Manufacture of thin film electroluminescence element - Google Patents
Manufacture of thin film electroluminescence elementInfo
- Publication number
- JPH02306584A JPH02306584A JP1128409A JP12840989A JPH02306584A JP H02306584 A JPH02306584 A JP H02306584A JP 1128409 A JP1128409 A JP 1128409A JP 12840989 A JP12840989 A JP 12840989A JP H02306584 A JPH02306584 A JP H02306584A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- emitting layer
- light emitting
- insulating layer
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000005401 electroluminescence Methods 0.000 title abstract 3
- 239000010408 film Substances 0.000 claims abstract description 32
- 230000001590 oxidative effect Effects 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract description 10
- 238000007654 immersion Methods 0.000 abstract description 8
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 abstract description 4
- 239000002253 acid Substances 0.000 abstract description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 239000001301 oxygen Substances 0.000 abstract description 3
- 238000009835 boiling Methods 0.000 abstract description 2
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 abstract description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 abstract description 2
- 238000006722 reduction reaction Methods 0.000 abstract description 2
- 150000003839 salts Chemical class 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- -1 Ir1203 Chemical compound 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、発光輝度を向上させた薄膜ＥＬ素子の製造法
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a thin film EL element with improved luminance.
従来、透明導電膜、必要に応じ第１の絶縁層。 Conventionally, a transparent conductive film and, if necessary, a first insulating layer.
発光層、第２の絶縁層及び導電膜を順次積層してなる薄
膜Ｅ Ｌ素子において該薄膜ＥＬ素子の発光輝度を向上
させるために通常、その製造工程において、一般的には
発光層の形成後基板を真空下、５００〜６００℃で１〜
２時間程度加熱する熱処理が行われている（日経エレク
トロニクス１９７９年４月号）。In order to improve the luminance of a thin film EL element formed by sequentially laminating a light emitting layer, a second insulating layer, and a conductive film, in the manufacturing process, generally after the formation of the light emitting layer, The substrate is heated under vacuum at 500-600℃ for 1~
Heat treatment is performed by heating for about 2 hours (Nikkei Electronics April 1979 issue).
前記従来の薄膜ＥＬ素子において発光層としてＭｎを少
量添加したＺｎＳ発光層を用いたものであって第１及び
第２のＭＡＲ層を有するものが、現在、最も高い発光輝
度を示すものとされている。Among the conventional thin film EL devices, those using a ZnS light emitting layer to which a small amount of Mn is added as the light emitting layer and having first and second MAR layers are currently considered to exhibit the highest luminance. There is.
しかし、この薄膜ＥＬ素子においても、フレーノ、周波
数が数十Ｈｚである線順次走査による発光時の輝度は２
０〜３０フートランバートであり、ＣＲＴ（カソード・
レイ・チューブ）などと比べると実用的なディスプレイ
パネルとするには、未だ、発光輝度が不充分である。However, even in this thin film EL element, the luminance during light emission by Freno line sequential scanning with a frequency of several tens of Hz is 2.
0 to 30 foot lambert, CRT (cathode
Compared to other devices such as ray tubes, the luminance is still insufficient for use as a practical display panel.
−９＝
〔課題を解決するための手段〕
本発明は、透光性暴利」二に、透明導電膜、発光層及び
導電膜を順次積層し、これらの層間のうち少なくとも一
つの層間に絶縁層を形成する薄膜ＥＬ素子の製造法にお
いて、」−記発光層を形成した後上記導電膜を形成する
前に基板を酸化性溶液中に浸漬する工程を含むことを特
徴とする薄膜ＥＴ。-9= [Means for Solving the Problems] The present invention provides a transparent conductive film, a light-emitting layer, and a conductive film that are sequentially laminated, and an insulating layer is provided between at least one of these layers. A method for manufacturing a thin film EL device comprising the step of immersing a substrate in an oxidizing solution after forming the light emitting layer and before forming the conductive film.
素子の製造法に関する１゜
本発明における透光性基材としてはガラス板等が使用さ
れる。1. Regarding the device manufacturing method: A glass plate or the like is used as the light-transmitting substrate in the present invention.
透明導電膜は、ＳｎＯ２，Ｉｒ１２０３、インジウムス
ズオギサイド（ＩＴ○）等からなり、電子ビーム蒸着法
、真空蒸着法、スパッタリング法、ＣＶ Ｄ （Ｃｈｅ
ｍｊｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｌ、１ｏｎ）法
、プラズマＣＶＤ法等によって形成される。The transparent conductive film is made of SnO2, Ir1203, indium tin oxide (IT○), etc., and can be made by electron beam evaporation, vacuum evaporation, sputtering, CV D (Che
It is formed by a mjcal vapor deposition (1on) method, a plasma CVD method, or the like.
発光層は、Ｍｎ、Ｔｂ笠の発光中心を含むＺ ｎＳ、Ｃ
ａＳ、ＳｒＳ、Ｚｎ５ｃ等のｖｉ ｎ族元素を含む母体
からなる螢光体からなり、電子ビーｌ、蒸着法、真空蒸
着法、スパッタリング法、ＭＯ（１：ＶＤ （Ｍｅｔａ
ｌ Ｏｒｇａｎｉ、ｃ ＣＶ Ｄ ）法、ハＴ、 Ｅ：
（Ａｔ：ｏ＋＋１ｉｃＬａｙｅｒ Ｐ、ｐｊｌ；ａｘ
ｙ）法等で形成される。The light-emitting layer includes Mn, ZnS, C containing luminescent centers of Tb caps.
It is composed of a phosphor made of a matrix containing VIN group elements such as aS, SrS, Zn5c, etc., and can be used by e-beam, evaporation, vacuum evaporation, sputtering, MO(1:VD (Meta
l Organi, c CV D) method, Ha T, E:
(At:o++1icLayer P, pjl;ax
y) Formed by method etc.
もう一つの導電膜は、透明導電膜と同様のものでもよく
、アルミニウム、クロム、金等の金属からなるものであ
ってもよい。The other conductive film may be the same as the transparent conductive film, or may be made of a metal such as aluminum, chromium, or gold.
前記絶縁層ば、Ｔａ、Ｏ，、Ｙ２Ｏ，、Ｓｊ○２゜ＡＱ
２０３，５ｊ３Ｎ４．ＡＲＮ、５ｒＴｉＯ，等がらなり
、これらの層を２層以上積層して絶縁層としてもよい。The insulating layer is Ta, O,, Y2O,, Sj○2゜AQ
203,5j3N4. It is made of ARN, 5rTiO, etc., and two or more of these layers may be laminated to form an insulating layer.
これらの層の形成方法は、透明導電膜の形成方法と同様
である。The method of forming these layers is the same as the method of forming a transparent conductive film.
本発明において、絶縁層は、前記透明導電膜と前記発光
層の間に及び／又は前記発光層と前記導電膜の間に積層
される。以下、前記透明導電膜と前記発光層の間の絶縁
層を第１の絶縁層と及び前記発光層と前記導電膜の間を
第２のＭＡ縁層と言う。In the present invention, an insulating layer is laminated between the transparent conductive film and the light emitting layer and/or between the light emitting layer and the conductive film. Hereinafter, the insulating layer between the transparent conductive film and the light emitting layer will be referred to as a first insulating layer, and the layer between the light emitting layer and the conductive film will be referred to as a second MA edge layer.
本発明において、透明導電膜、第１の絶縁層。In the present invention, a transparent conductive film and a first insulating layer.
発光層、第２の絶縁層及び導電膜（背面電極）が、この
順序で、基材」二に順次形成される。ただし、第１及び
第２の絶縁層のうちどちらか−っはなくてもよい。また
、発光層を形成後前記と同様の絶縁層を積層し、さらに
発光層を形成してもよい。A light emitting layer, a second insulating layer, and a conductive film (back electrode) are sequentially formed on the base material 2 in this order. However, one of the first and second insulating layers may be omitted. Alternatively, after forming the light-emitting layer, an insulating layer similar to the above may be laminated, and then a light-emitting layer may be formed.
４一
本発明においては、これらの工程中介光層の形成後背面
電極を形成する前までに少なくとも１回基板を酸化性溶
液中に浸漬する。この基板は、発光層を形成した後のも
のでもよいが、第２の絶縁層の少なくとも一部を形成し
た後のものが好ましい。また、この場合、酸化性溶液に
浸漬する前に形成されている第２の絶縁層の少なくとも
一部が酸化物からなるものであるのが好ましい。41 In the present invention, during these steps, the substrate is immersed in an oxidizing solution at least once after the formation of the light mediating layer and before the formation of the back electrode. This substrate may be one after forming a light emitting layer, but preferably one after forming at least a part of the second insulating layer. Further, in this case, it is preferable that at least a portion of the second insulating layer formed before being immersed in the oxidizing solution is made of an oxide.
上記酸化性溶液としては、過酸化水素、ベルオキソ酸、
過マンガン酸、過塩素酸、クロム酸、過酢酸等があり、
自らの還元反応に伴い酸素を発生する酸及びその塩の溶
液であればよい。Examples of the above oxidizing solution include hydrogen peroxide, peroxyacid,
There are permanganic acid, perchloric acid, chromic acid, peracetic acid, etc.
Any solution of an acid or its salt that generates oxygen through its own reduction reaction may be used.
浸漬は、室温乃至上記溶液の沸騰温度の間で、０．１〜
５時間時間待えはよく、浸漬処理後は水洗し、乾燥する
このような浸漬処理によって、酸素が発光層に導入され
、発光層のＶＩＢ族元素の欠陥が埋められるものと考え
られ、結果として、発光輝度が向上する。The immersion is carried out between room temperature and the boiling temperature of the above solution.
Waiting for 5 hours is good, and it is thought that by such immersion treatment, which involves rinsing with water and drying after immersion treatment, oxygen is introduced into the light emitting layer and defects in group VIB elements in the light emitting layer are filled, and as a result. , luminescence brightness is improved.
本発明を図面を用いて説明する。第１図は本発明により
得られる薄膜ＥＬ素子の一例を示す断面図であり、基板
１の」二に透明導電膜（透明電極）２、第１の絶縁Ｒ３
２発光層４．第２の絶縁層の第１層５．第２の絶縁層の
第２層６及びもう一つの導電膜（背面電極）７をこの順
に積層して作製したものである。The present invention will be explained using the drawings. FIG. 1 is a cross-sectional view showing an example of a thin film EL element obtained by the present invention, in which a transparent conductive film (transparent electrode) 2 and a first insulating layer R3 are formed on the substrate 1.
2 light emitting layer 4. First layer of second insulating layer5. The second layer 6 of the second insulating layer and another conductive film (back electrode) 7 are laminated in this order.
実施例１ 第１図に示すような構造の薄膜ＥＬ素子を作成した。Example 1 A thin film EL device having a structure as shown in FIG. 1 was fabricated.
基材１としてのホウケイ酸ガラス上にＩＴＯ膜をスパッ
タリング法で形成し、これをエツチングして透明導電膜
２としてのストライプ状ＩＴ○透明電極（膜厚０．２
μｍ、 ＠０．１５ｎｘｎ、電極間隔０．１ｎｗｎ）３
２０本を形成した。この上に、第１のＭＡ縁層３として
Ｓｊ、Ｎ４膜をプラズマＣＶＤ法で０．３μｍの厚さに
形成し、さらに、発光層４として電子ビーム蒸着法でマ
ンガン付活硫化亜鉛（ＺｎＳ：Ｍｎ）層０．５μｍ
の厚さに形成した。An ITO film is formed by sputtering on borosilicate glass as the base material 1, and this is etched to form a striped IT○ transparent electrode (film thickness 0.2
μm, @0.15nxn, electrode spacing 0.1nwn)3
20 pieces were formed. On top of this, an Sj, N4 film is formed as the first MA edge layer 3 to a thickness of 0.3 μm by plasma CVD, and furthermore, manganese-activated zinc sulfide (ZnS: Mn) layer 0.5 μm
It was formed to a thickness of .
ついで、第２の絶縁層の第１層５としてＡＱ２０３膜を
スパッタリング法で０．０５μｍの厚さに形成した。こ
の後、得られた基板を過酸化水素を１０容量％含む水溶
液中に５０℃で１時間浸漬した。Then, as the first layer 5 of the second insulating layer, an AQ203 film was formed to a thickness of 0.05 μm by sputtering. Thereafter, the obtained substrate was immersed in an aqueous solution containing 10% by volume of hydrogen peroxide at 50° C. for 1 hour.
次いで、第２の絶縁層の第２ＷＪ６としてＳｉ３Ｎ４膜
をスパッタリング法で０．２μｍの厚さに形成した。最
後に、電子ビーム蒸着法でＡＱＩＰＪを形成し、エツチ
ングして導電膜７としてのストライプ状ＡＱの背面電極
（膜厚０．２μｍ、幅０ 、１．５ ｏｎ 。Next, a Si3N4 film was formed as the second WJ6 of the second insulating layer to a thickness of 0.2 μm by sputtering. Finally, AQIPJ is formed by electron beam evaporation and etched to form a striped AQ back electrode (thickness 0.2 μm, width 0, 1.5 on) as the conductive film 7.
電極間隔０．１ｍｍ）を２００本、ＩＴ○透明電極と直
交するように形成した。得られた簿膜ＥＬ素子を試料Ａ
とした。200 electrodes (with an electrode spacing of 0.1 mm) were formed perpendicularly to the IT○ transparent electrode. The obtained film EL device was designated as sample A.
And so.
比較例１
実施例１において、過酸化水素を１０容量％含む水溶液
中における５０℃で１時間の浸漬を行わないこと以外は
、実施例１に準じて、薄膜ＥＬ素子を得た。得られた薄
膜ＥＬ素子を試料Ｂとした。Comparative Example 1 A thin film EL device was obtained in the same manner as in Example 1, except that the 1 hour immersion at 50° C. in an aqueous solution containing 10% by volume of hydrogen peroxide was not performed. The obtained thin film EL device was designated as sample B.
前記で得られた試料Ａ及び試料Ｂを周波数１ｋＨｚの正
弦波電圧を用いて駆動し、透明電極と背面電極の間に印
加するＩＩＫ動電圧電圧ｏ−、）と発光層７一
度の関係（印加電圧−発光輝度特性）を求めた。The sample A and sample B obtained above were driven using a sine wave voltage with a frequency of 1 kHz, and the relationship between the IIK dynamic voltage voltage (o-,) applied between the transparent electrode and the back electrode and the luminescent layer 7 (applied Voltage-emission brightness characteristics) were determined.
第２図は、この結果を示す。第２図中、グラフ８は試料
Ａについての及びグラフ９は試料Ｂについての結果であ
る。この結果から明らかであるように、発光開始電圧よ
り３０Ｖ高い印加電圧において、発光輝度は試料Ａでは
２４． ＯＯｃ ｄ ／イ（２１０Ｖにおいて）及び試
料Ｂでは１３００ｃｄ／ボ（１８５Ｖにおいて）であっ
た。Figure 2 shows this result. In FIG. 2, graph 8 shows the results for sample A, and graph 9 shows the results for sample B. As is clear from this result, at an applied voltage 30 V higher than the emission starting voltage, the luminance of sample A was 24. OOc d /i (at 210 V) and 1300 cd/b (at 185 V) for sample B.
実施例２
実施例１において第１のＭ縁屑３を設けないこと以外は
実施例１に準じて、薄膜ＥＬ素子を作製した。得られた
薄膜ＥＬ素子を試料Ｃとした比較例２
実施例２において、過酸化水素を１０容量％含む水溶液
中における５０℃で１時間の浸漬を行わないこと以外は
、実施例１に準じて、薄膜ＥＬ素子を得た。得られた薄
膜ＥＬ素子を試料りとした。Example 2 A thin film EL device was produced in the same manner as in Example 1 except that the first M edge scrap 3 was not provided. Comparative Example 2 Using the obtained thin film EL element as Sample C In Example 2, a sample was prepared according to Example 1 except that the immersion for 1 hour at 50°C in an aqueous solution containing 10% by volume of hydrogen peroxide was not performed. , a thin film EL device was obtained. The obtained thin film EL device was used as a sample.
前記で得られた試料Ｃ及び試料りの印加電圧−発光輝度
特性を前記と同様にして試験した。その結果、試料Ｃの
輝度は試料りの輝度の約２倍であった。The applied voltage-emission brightness characteristics of sample C and sample sample C obtained above were tested in the same manner as above. As a result, the brightness of sample C was approximately twice that of sample C.
〔発明の効果〕
本発明によれば発光輝度の大きな薄膜Ｅ Ｌ素子を容易
に得ることができる。[Effects of the Invention] According to the present invention, a thin film EL element with high luminance can be easily obtained.
第１図は本発明に係る薄膜Ｅ Ｌ素子の断面図及び第２
図は実施例１及び比較例１で得られた薄膜ＥＬ素子の印
加電圧−発光輝度特性を示すグラフである。
１・・・基材、２・・・透明導電膜、３・・・第１のＭ
縁周。
４・・・発光層、５・・・第２の絶縁膜の第１層、６・
・・第２の絶縁膜の第２層、７・・・導電膜（背面電極
）、８・・・実施例１の結果を示すグラフ、９・・・比
較例］の結果を示すグラフ。FIG. 1 is a sectional view of a thin film EL element according to the present invention, and FIG.
The figure is a graph showing the applied voltage-emission brightness characteristics of the thin film EL elements obtained in Example 1 and Comparative Example 1. DESCRIPTION OF SYMBOLS 1... Base material, 2... Transparent conductive film, 3... First M
Periphery. 4... Light emitting layer, 5... First layer of second insulating film, 6...
... Second layer of second insulating film, 7... Conductive film (back electrode), 8... Graph showing the results of Example 1, 9... Graph showing the results of Comparative Example].
Claims (3)
を順次積層し、これらの層間のうち少なくとも一つの層
間に絶縁層を形成する薄膜ＥＬ素子の製造法において、
上記発光層を形成した後上記導電膜を形成する前に基板
を酸化性溶液中に浸漬する工程を含むことを特徴とする
薄膜ＥＬ素子の製造法。1. In a method for manufacturing a thin film EL element, a method for manufacturing a thin film EL device includes sequentially laminating a transparent conductive film, a light-emitting layer, and a conductive film on a light-transmitting base material, and forming an insulating layer between at least one of these layers,
A method for manufacturing a thin film EL device, comprising the step of immersing a substrate in an oxidizing solution after forming the light emitting layer and before forming the conductive film.
後に基板を酸化性溶液中に浸漬する請求項１記載の薄膜
ＥＬ素子の製造法。2. 2. The method of manufacturing a thin film EL device according to claim 1, wherein the substrate is immersed in an oxidizing solution after forming at least a portion of the insulating layer on the light emitting layer.
求項２記載の薄膜ＥＬ素子の製造法。3. 3. The method for manufacturing a thin film EL device according to claim 2, wherein at least a portion of the insulating layer is an oxide insulator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1128409A JPH02306584A (en) | 1989-05-22 | 1989-05-22 | Manufacture of thin film electroluminescence element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1128409A JPH02306584A (en) | 1989-05-22 | 1989-05-22 | Manufacture of thin film electroluminescence element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02306584A true JPH02306584A (en) | 1990-12-19 |
Family
ID=14984068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1128409A Pending JPH02306584A (en) | 1989-05-22 | 1989-05-22 | Manufacture of thin film electroluminescence element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02306584A (en) |
-
1989
- 1989-05-22 JP JP1128409A patent/JPH02306584A/en active Pending
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