JPH02308520A - Low temperature treatment device - Google Patents

Abstract

PURPOSE:To prevent a supporter from being treated at low temperature by covering the surface of a substrate supporter with a substrate to be treated. CONSTITUTION:By a substrate supporter 8, the susceptor, inside a reaction chamber 2, a wafer 7, the substance to be treated, being supported by this is cooled, and the gas from an activator generating chamber 4 condenses on the wafer 7 through a nozzle 6 and the wafer 7 is CVD-treated at low temperature. This wafer 7 is larger than the supporter 8, and the supporter 8 covered by the wafer 7 is prevented from being treated at low temperature in low temperature treatment, and it becomes a low temperature treatment device that the maintainability is elevated.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a low temperature processing apparatus, and more particularly to a low temperature processing apparatus for processing a substrate to be processed supported by a substrate support in a low temperature state. The invention can be used, for example, in the field of electronic material formation, for example, when forming a film on a substrate to be processed, such as a semiconductor substrate.

[Summary of the invention]

Low-temperature processing equipment has a problem in that the support that supports the substrate to be processed is also cooled at the same time, and the support is also subjected to low-temperature processing. By performing low-temperature treatment with a structure that covers the body surface, the support is prevented from being subjected to low-temperature treatment.

[Conventional technology]

In recent years, low-temperature processing apparatuses, such as low-temperature film-forming apparatuses that deposit a film on the surface of a substrate by cooling the substrate to a low temperature, for example, below the dew point of the deposition species, have attracted attention. this is,
This is due to the following background.

In other words, film formation methods, particularly CvD technology, have traditionally occupied an important position as one of the semiconductor manufacturing processes, but with the recent trend of accelerating element miniaturization, trenches with higher aspect ratios and There is a growing demand for techniques for filling holes and forming flat insulating films on surfaces with uneven underlying surfaces. It is becoming difficult to meet these needs accurately with the conventional CVD method using a gas phase.

Recently, attention has been paid to techniques in which the substrate to be processed is cooled to, for example, 0° C. or lower to increase the adsorption efficiency of the deposited species to the substrate, or in which CVD is performed at a temperature lower than the dew point of the deposited species. When the deposited species is lowered below the dew point, the deposited species converts into a liquid phase,
CVD is performed in a so-called liquid phase, which makes it possible to exceed the limits of conventional CVD.

Regarding such low-temperature processing, especially low-temperature film deposition (low-temperature CVD) technology, see S S D M 1987 Proceedings, p. 451, 1988 Proceedings, p. 549, Japan Society of Applied Physics 1988.
It is described in the Spring 2018 Proceedings, page 525, etc.

[Problem that the invention seeks to solve]

However, in conventional low-temperature processing techniques, the substrate support that supports the substrate to be processed is also cooled at the same time.
For example, in a low-temperature film forming apparatus, the susceptor, which is a support on which a wafer, which is the substrate to be processed, is placed is also cooled, so the surrounding area may be Also film deposition occurs. Such unnecessary film deposition causes various inconveniences, such as increased maintenance requirements.

The present invention solves the above-mentioned problems and provides a low-temperature method that prevents inconveniences such as unnecessary processing on the support even when the substrate to be processed is supported by a support and subjected to low-temperature treatment. The purpose is to provide processing equipment.

[Means for solving problems]

In order to solve the above-mentioned problems, the present invention provides a low-temperature processing apparatus for processing a substrate to be processed supported by a substrate support in a low temperature state, in which the surface of the substrate support is covered by the substrate to be processed at least during processing. It is.

[For production]

In the present invention, during low-temperature processing, the surface of the substrate support is covered with the substrate to be processed, so the surface of the support is not processed.
For example, formation of a film on the surface of the support is reliably prevented.

〔Example〕

An embodiment of the present invention will be described below with reference to FIG. It should be noted that, as a matter of course, the present invention is not limited to the illustrated embodiment.

In the embodiment shown in FIG. 1, the present invention is applied to a low-temperature film forming apparatus, and in particular, to a low 1 cvD apparatus, which is used as one of the processes for manufacturing semiconductor devices.

FIG. 1 is a structural longitudinal sectional view schematically showing the structure of the device.

In FIG. 1, reference numeral 1 is a loading chamber, 3 is an unloading chamber, and the reaction chamber 2 is not shown, in which each chamber 1.3 and a reaction chamber 2 are installed via gate valves 10 and 10', respectively. However, the exhaust system is in place.

In the reaction chamber 2, a substrate to be processed (here, a wafer) 7 is supported by being placed on a susceptor, which is a support 8, and the active species sent from the active species generation chamber 4 through the transport pipe 5, The light is applied from the nozzle 6 to the wafer, which is the substrate 7 to be processed.

In the present invention, the surface of the substrate support 8 is covered with the substrate 7 to be processed during processing.

In this embodiment, as shown in the figure, the susceptor that is the support 8 is made slightly smaller than the wafer that is the substrate 7 to be processed, so that the substrate 7 to be processed covers the support 8 as shown in the figure. It has become. Although not shown, the support 8 has a built-in cooling head, which cools the base 7 to a predetermined temperature, for example, below the dew point of the active species. Base body 7
is loaded from the loading chamber 1 onto the support 8 using a transport system (not shown). (Alternatively, a configuration may be adopted in which a cooling chamber is provided between the load chamber 1 and the reaction chamber 2, and the substrate is cooled there).

After cooling the substrate 7, active species are generated in an external active species generation chamber 4 (in this example, RF plasma was provided to obtain active species. Arrow A indicates gas introduction). ,
It is sprayed onto the substrate 7 from the nozzle 6 through the transport pipe 5. The active species condense on the substrate 7 and liquid phase CVD is performed.

At this time, since the support 8 is covered with the base 7, active species will not condense here. That is, in CVD, the support 8
on the surface, thus preventing unnecessary deposition.

In this embodiment, during this low-temperature CVD treatment, the back surface of the substrate 7 is bank-purged with IIe or Ar gas having a low boiling point, as shown in the figure. Arrow B schematically indicates the flow of purge gas. This was made possible because the support 8 is smaller than the base 7, and this back purge allows the base 7 to
It is also possible to prevent unnecessary film formation on the back side of the substrate 7 due to the low boiling point gas getting around to the back side of the substrate 7. Moreover, as a result, film growth on the support body 8 can be prevented even more reliably.

After finishing the predetermined film growth, the wafer, which is the substrate 7, is transferred to the unloading chamber 3 by a transport system (not shown).

The positioning of the wafer, which is the substrate 7, is carried out during film growth.
You may use a guide pin that does not come into contact with the
The stationary end point of the transport arm may be used for positioning the base body 7.

Furthermore, since the wafer, which is the base 7 in this example, does not particularly rotate, it can be installed on the susceptor, which is the support 8, by its own weight. If necessary, an appropriate means such as a Bernoulli chuck may be used.

As described above, in this embodiment, the present invention is applied to a film forming process apparatus that performs film growth by cooling a wafer, which is a substrate to be processed 7, to a temperature below the dew point of a reactive species. By using a susceptor 8 that is slightly smaller than the substrate 7 (wafer) to be processed, the substrate 7 covers the support 8 during processing, and this allows the support 8 to be exposed to unnecessary low temperatures. Processing, here deposition, is prevented from being applied.

Furthermore, in this embodiment, the side surface of the support 8 (susceptor) is also equipped with a function to purge the back surface of the substrate 7 (wafer) with a rare gas, etc., so that the above effect can be further ensured, and This makes it possible to prevent unnecessary deposition on the back surface of the base 7.

In this way, according to this embodiment, there is no film deposition on the support 8 such as a susceptor, so maintenance frequency can be suppressed. Further, since film growth on the back surface of the substrate 7 to be processed, such as a wafer, can be prevented, the dependability of the process is improved.

〔Effect of the invention〕

As described above, according to the present invention, even when a substrate to be treated is supported by a support and low-temperature treatment is performed, inconveniences such as unnecessary processing on the support can be prevented from occurring. Therefore, when applied to, for example, a low-temperature film forming apparatus, it is possible to obtain the effect that unnecessary film formation does not occur on the support and maintenance etc. can be reduced.

[Brief explanation of the drawing]

FIG. 1 is a schematic vertical cross-sectional view showing the configuration of an apparatus according to an embodiment of the present invention. (2)... Loading chamber, 2... Unloading chamber, 3... Reaction chamber, 7... Substrate to be processed (wafer), 8... Substrate support (susceptor).

Claims (1)

[Claims] 1. A low-temperature processing apparatus for processing a substrate to be processed supported by a substrate support at a low temperature, characterized in that the surface of the substrate support is covered by the substrate to be processed at least during processing. Low temperature processing equipment.