JPH0231863B2 - - Google Patents
Info
- Publication number
- JPH0231863B2 JPH0231863B2 JP57131026A JP13102682A JPH0231863B2 JP H0231863 B2 JPH0231863 B2 JP H0231863B2 JP 57131026 A JP57131026 A JP 57131026A JP 13102682 A JP13102682 A JP 13102682A JP H0231863 B2 JPH0231863 B2 JP H0231863B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thermal expansion
- sintered body
- alloy
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/24—After-treatment of workpieces or articles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/25—Arrangements for cooling characterised by their materials
- H10W40/257—Arrangements for cooling characterised by their materials having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh or porous structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/6875—Shapes or dispositions thereof being on a metallic substrate, e.g. insulated metal substrates [IMS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07331—Connecting techniques
- H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/321—Structures or relative sizes of die-attach connectors
- H10W72/325—Die-attach connectors having a filler embedded in a matrix
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
- Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
- Y10T428/12049—Nonmetal component
- Y10T428/12056—Entirely inorganic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Die Bonding (AREA)
- Powder Metallurgy (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57131026A JPS5921032A (ja) | 1982-07-26 | 1982-07-26 | 半導体装置用基板 |
| DE8383304301T DE3379297D1 (en) | 1982-07-26 | 1983-07-25 | Substrate for semiconductor apparatus |
| EP83304301A EP0100232B2 (en) | 1982-07-26 | 1983-07-25 | Substrate for semiconductor apparatus |
| US07/297,935 US5099310A (en) | 1982-07-26 | 1989-01-17 | Substrate for semiconductor apparatus |
| US07/382,056 US5086333A (en) | 1982-07-26 | 1989-07-13 | Substrate for semiconductor apparatus having a composite material |
| US08/284,277 US5409864A (en) | 1982-07-26 | 1994-08-02 | Substrate for semiconductor apparatus |
| US08368657 US5525428B1 (en) | 1982-07-26 | 1995-01-04 | Substrate for semiconductor apparatus |
| US08/368,636 US5563101A (en) | 1982-07-26 | 1995-01-04 | Substrate for semiconductor apparatus |
| US08/635,651 US5708959A (en) | 1982-07-26 | 1996-04-22 | Substrate for semiconductor apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57131026A JPS5921032A (ja) | 1982-07-26 | 1982-07-26 | 半導体装置用基板 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4325582A Division JPH07105464B2 (ja) | 1992-12-04 | 1992-12-04 | 半導体素子搭載用半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5921032A JPS5921032A (ja) | 1984-02-02 |
| JPH0231863B2 true JPH0231863B2 (2) | 1990-07-17 |
Family
ID=15048269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57131026A Granted JPS5921032A (ja) | 1982-07-26 | 1982-07-26 | 半導体装置用基板 |
Country Status (4)
| Country | Link |
|---|---|
| US (6) | US5099310A (2) |
| EP (1) | EP0100232B2 (2) |
| JP (1) | JPS5921032A (2) |
| DE (1) | DE3379297D1 (2) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014502059A (ja) * | 2011-01-05 | 2014-01-23 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | サーマルマネージメントを向上させた電子アセンブリ |
Families Citing this family (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5921032A (ja) * | 1982-07-26 | 1984-02-02 | Sumitomo Electric Ind Ltd | 半導体装置用基板 |
| JPS5946050A (ja) * | 1982-09-09 | 1984-03-15 | Narumi China Corp | 半導体用セラミツクパツケ−ジ |
| JPS5991742U (ja) * | 1982-12-13 | 1984-06-21 | 鳴海製陶株式会社 | 半導体用パツケ−ジ |
| JPS59114845A (ja) * | 1982-12-21 | 1984-07-03 | Nec Corp | 諸特性の改善された容器を用いた半導体装置 |
| EP0113088B1 (en) * | 1982-12-22 | 1989-05-24 | Sumitomo Electric Industries Limited | Substrate for mounting semiconductor element |
| JPS60239033A (ja) * | 1984-05-11 | 1985-11-27 | Tokyo Tungsten Co Ltd | 複合電極材料 |
| JPS61148843A (ja) * | 1984-12-21 | 1986-07-07 | Nec Kansai Ltd | ステム |
| JPH065683B2 (ja) * | 1985-02-25 | 1994-01-19 | 住友電気工業株式会社 | 半導体素子搭載用基板 |
| DE3535081A1 (de) * | 1985-10-02 | 1987-04-09 | Vacuumschmelze Gmbh | Verbundwerkstoff und verfahren zu seiner herstellung |
| US4788627A (en) * | 1986-06-06 | 1988-11-29 | Tektronix, Inc. | Heat sink device using composite metal alloy |
| DE3883873T2 (de) * | 1987-06-30 | 1994-01-05 | Sumitomo Electric Industries | Trägerelement für Halbleiterapparat. |
| JPH0671941B2 (ja) * | 1987-11-18 | 1994-09-14 | 日本電気株式会社 | 紙葉類の給紙装置 |
| US4942076A (en) * | 1988-11-03 | 1990-07-17 | Micro Substrates, Inc. | Ceramic substrate with metal filled via holes for hybrid microcircuits and method of making the same |
| US5202288A (en) * | 1990-06-01 | 1993-04-13 | Robert Bosch Gmbh | Method of manufacturing an electronic circuit component incorporating a heat sink |
| US6291424B1 (en) * | 1991-11-14 | 2001-09-18 | Brigham And Women's Hospital | Nitrosated and nitrosylated heme proteins |
| US5315155A (en) * | 1992-07-13 | 1994-05-24 | Olin Corporation | Electronic package with stress relief channel |
| US5413751A (en) * | 1993-04-14 | 1995-05-09 | Frank J. Polese | Method for making heat-dissipating elements for micro-electronic devices |
| US5972737A (en) * | 1993-04-14 | 1999-10-26 | Frank J. Polese | Heat-dissipating package for microcircuit devices and process for manufacture |
| US5886407A (en) * | 1993-04-14 | 1999-03-23 | Frank J. Polese | Heat-dissipating package for microcircuit devices |
| US6238454B1 (en) * | 1993-04-14 | 2001-05-29 | Frank J. Polese | Isotropic carbon/copper composites |
| EP0645804B1 (en) * | 1993-09-16 | 2003-04-23 | Sumitomo Electric Industries, Limited | Metal casing for semiconductor device having high thermal conductivity and thermal expansion coefficient similar to that of semiconductor and method for manufacturing the same |
| USD361317S (en) | 1994-05-26 | 1995-08-15 | Wakefield Engineering, Inc. | Heat sink device |
| US5700724A (en) * | 1994-08-02 | 1997-12-23 | Philips Electronic North America Corporation | Hermetically sealed package for a high power hybrid circuit |
| JPH0945815A (ja) * | 1995-08-03 | 1997-02-14 | Sumitomo Electric Ind Ltd | 半導体用パッケージ、該パッケージ用板状部材及びその製造方法 |
| US5723905A (en) * | 1995-08-04 | 1998-03-03 | International Business Machines Corporation | Semiconductor package with low strain seal |
| US5912399A (en) * | 1995-11-15 | 1999-06-15 | Materials Modification Inc. | Chemical synthesis of refractory metal based composite powders |
| US6331731B1 (en) | 1995-12-07 | 2001-12-18 | International Business Machines Corporation | Column for module component |
| AT411070B (de) * | 1996-03-25 | 2003-09-25 | Electrovac | Verfahren zur herstellung eines substrates mit einer polykristallinen diamantschicht |
| US5686676A (en) * | 1996-05-07 | 1997-11-11 | Brush Wellman Inc. | Process for making improved copper/tungsten composites |
| JP3426104B2 (ja) * | 1997-05-13 | 2003-07-14 | 日立粉末冶金株式会社 | 半導体パッケージ用薄板部品及びその製造方法 |
| KR100215547B1 (ko) * | 1997-06-14 | 1999-08-16 | 박원훈 | 마이크로파 소자용 텅스텐-구리 밀폐 패키지용 용기 및 그의 제조 방법 |
| KR100217032B1 (ko) * | 1997-06-14 | 1999-09-01 | 박호군 | 구리 용침용 텅스텐 골격 구조 제조 방법 및 이를 이용한 텅스텐-구리 복합재료 제조 방법 |
| JP4623774B2 (ja) * | 1998-01-16 | 2011-02-02 | 住友電気工業株式会社 | ヒートシンクおよびその製造方法 |
| US6114048A (en) * | 1998-09-04 | 2000-09-05 | Brush Wellman, Inc. | Functionally graded metal substrates and process for making same |
| JP3479738B2 (ja) * | 1998-11-16 | 2003-12-15 | 株式会社アライドマテリアル | 半導体パッケージと、それに用いる放熱基板の製造方法 |
| US7083759B2 (en) * | 2000-01-26 | 2006-08-01 | A.L.M.T. Corp. | Method of producing a heat dissipation substrate of molybdenum powder impregnated with copper with rolling in primary and secondary directions |
| US6876075B2 (en) * | 2000-03-15 | 2005-04-05 | Sumitomo Electric Industries, Ltd. | Aluminum-silicon carbide semiconductor substrate and method for producing the same |
| JP2003152145A (ja) * | 2001-08-31 | 2003-05-23 | Sumitomo Electric Ind Ltd | 半導体放熱用基板とその製造方法及びパッケージ |
| AT5972U1 (de) * | 2002-03-22 | 2003-02-25 | Plansee Ag | Package mit substrat hoher wärmeleitfähigkeit |
| US6727117B1 (en) | 2002-11-07 | 2004-04-27 | Kyocera America, Inc. | Semiconductor substrate having copper/diamond composite material and method of making same |
| KR100490879B1 (ko) * | 2002-11-29 | 2005-05-24 | 국방과학연구소 | 균일한 조직을 갖는 텅스텐-구리(W-Cu) 합금 및 그제조 방법 |
| KR100490880B1 (ko) * | 2002-11-30 | 2005-05-24 | 국방과학연구소 | 텅스텐-구리 복합재료의 구리 스며나옴 억제 소결법 |
| KR100594602B1 (ko) | 2003-04-28 | 2006-06-30 | 히다치 훈마츠 야킨 가부시키가이샤 | 구리 기재 저열팽창 고열전도 부재의 제조 방법 |
| DE102004020404B4 (de) * | 2004-04-23 | 2007-06-06 | H. C. Starck Gmbh & Co. Kg | Trägerplatte für Sputtertargets, Verfahren zu ihrer Herstellung und Einheit aus Trägerplatte und Sputtertarget |
| ATE513312T1 (de) * | 2004-12-20 | 2011-07-15 | Iq Evolution Gmbh | Mikrokühlkörper |
| JP4799069B2 (ja) * | 2005-07-28 | 2011-10-19 | Jfe精密株式会社 | 電子機器で用いる放熱板 |
| JP5273922B2 (ja) | 2006-12-28 | 2013-08-28 | 株式会社アライドマテリアル | 放熱部材および半導体装置 |
| JP2009252444A (ja) * | 2008-04-03 | 2009-10-29 | Nec Microwave Inc | コレクタ電極及び電子管 |
| US8009420B1 (en) * | 2008-09-30 | 2011-08-30 | Lockheed Martin Corporation | Heat transfer of processing systems |
| KR20150103653A (ko) * | 2013-01-07 | 2015-09-11 | 가부시끼가이샤 아라이도 마테리아루 | 세라믹 배선 기판, 반도체 장치, 및 세라믹 배선 기판의 제조 방법 |
| DE102014114097B4 (de) | 2014-09-29 | 2017-06-01 | Danfoss Silicon Power Gmbh | Sinterwerkzeug und Verfahren zum Sintern einer elektronischen Baugruppe |
| DE102014114096A1 (de) * | 2014-09-29 | 2016-03-31 | Danfoss Silicon Power Gmbh | Sinterwerkzeug für den Unterstempel einer Sintervorrichtung |
| DE102014114093B4 (de) | 2014-09-29 | 2017-03-23 | Danfoss Silicon Power Gmbh | Verfahren zum Niedertemperatur-Drucksintern |
| JP5818045B1 (ja) * | 2014-12-05 | 2015-11-18 | 株式会社半導体熱研究所 | 放熱基板と、それを使用した半導体パッケージと半導体モジュール |
| CN106914623A (zh) * | 2017-03-23 | 2017-07-04 | 深圳市泛海统联精密制造有限公司 | 金属注射成型制品表面陶瓷化的方法及其制品 |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1552184A (en) * | 1924-12-31 | 1925-09-01 | Gen Electric | Metal composition and method of manufacture |
| US1848437A (en) * | 1925-08-26 | 1932-03-08 | Mallory & Co Inc P R | Metal alloy |
| US1860793A (en) * | 1927-07-09 | 1932-05-31 | Mallory & Co Inc P R | Electrical contacting element |
| US2179960A (en) * | 1931-11-28 | 1939-11-14 | Schwarzkopf Paul | Agglomerated material in particular for electrical purposes and shaped bodies made therefrom |
| NL107577C (2) * | 1954-07-01 | |||
| US2763822A (en) * | 1955-05-10 | 1956-09-18 | Westinghouse Electric Corp | Silicon semiconductor devices |
| US2983996A (en) * | 1958-07-30 | 1961-05-16 | Mallory & Co Inc P R | Copper-tungsten-molybdenum contact materials |
| NL264799A (2) * | 1960-06-21 | |||
| NL263391A (2) * | 1960-06-21 | |||
| DE1133834B (de) * | 1960-09-21 | 1962-07-26 | Siemens Ag | Siliziumgleichrichter und Verfahren zu dessen Herstellung |
| DE1143588B (de) * | 1960-09-22 | 1963-02-14 | Siemens Ag | Gesinterter Kontaktkoerper fuer Halbleiteranordnungen |
| US3353931A (en) * | 1966-05-26 | 1967-11-21 | Mallory & Co Inc P R | Tungsten-indium powder bodies infiltrated with copper |
| US3423203A (en) * | 1966-05-26 | 1969-01-21 | Mallory & Co Inc P R | Tungsten-indium powder bodies infiltrated with copper |
| US3409974A (en) * | 1967-07-07 | 1968-11-12 | Alloys Unltd Inc | Process of making tungsten-based composite materials |
| US3685134A (en) * | 1970-05-15 | 1972-08-22 | Mallory & Co Inc P R | Method of making electrical contact materials |
| JPS492449A (2) * | 1972-04-19 | 1974-01-10 | ||
| JPS5062776A (2) * | 1973-10-05 | 1975-05-28 | ||
| JPS5116302B2 (2) * | 1973-10-22 | 1976-05-22 | ||
| JPS5259572A (en) * | 1975-11-12 | 1977-05-17 | Hitachi Ltd | Electronic circuit device |
| US4025997A (en) * | 1975-12-23 | 1977-05-31 | International Telephone & Telegraph Corporation | Ceramic mounting and heat sink device |
| JPS52117075A (en) * | 1976-03-27 | 1977-10-01 | Toshiba Corp | Semiconductor device |
| JPS603776B2 (ja) * | 1977-06-03 | 1985-01-30 | 株式会社日立製作所 | 半導体素子 |
| US4158719A (en) * | 1977-06-09 | 1979-06-19 | Carpenter Technology Corporation | Low expansion low resistivity composite powder metallurgy member and method of making the same |
| JPS5471572A (en) * | 1977-11-18 | 1979-06-08 | Fujitsu Ltd | Semiconductor device |
| DE2853951A1 (de) * | 1978-12-14 | 1980-07-03 | Demetron | Kontaktplatte fuer halbleiter-bauelemente |
| JPS55125960A (en) * | 1979-03-12 | 1980-09-29 | Sankyo Seiki Mfg Co Ltd | Automatic working device |
| JPS55154354A (en) * | 1979-05-16 | 1980-12-01 | Toray Silicone Co Ltd | Silicone composition for treating glass fiber |
| JPS5630092A (en) * | 1979-08-21 | 1981-03-26 | Toshiba Corp | Preparation of composite electrode material |
| JPS5678130A (en) * | 1979-11-30 | 1981-06-26 | Hitachi Ltd | Semiconductor device and its manufacture |
| US4291815B1 (en) * | 1980-02-19 | 1998-09-29 | Semiconductor Packaging Materi | Ceramic lid assembly for hermetic sealing of a semiconductor chip |
| US4427993A (en) * | 1980-11-21 | 1984-01-24 | General Electric Company | Thermal stress relieving bimetallic plate |
| JPS57152438A (en) * | 1981-03-16 | 1982-09-20 | Hitachi Cable Ltd | Thermal expansion regulating material |
| JPS6038867B2 (ja) * | 1981-06-05 | 1985-09-03 | 株式会社日立製作所 | 絶縁型半導体装置 |
| JPS5867049A (ja) * | 1981-10-16 | 1983-04-21 | Sumitomo Electric Ind Ltd | 1c用パツケ−ジ |
| JPS5921032A (ja) * | 1982-07-26 | 1984-02-02 | Sumitomo Electric Ind Ltd | 半導体装置用基板 |
| US4451540A (en) * | 1982-08-30 | 1984-05-29 | Isotronics, Inc. | System for packaging of electronic circuits |
| JPS5946050A (ja) * | 1982-09-09 | 1984-03-15 | Narumi China Corp | 半導体用セラミツクパツケ−ジ |
| JPS6022345A (ja) * | 1983-07-19 | 1985-02-04 | Toyota Central Res & Dev Lab Inc | 半導体装置 |
-
1982
- 1982-07-26 JP JP57131026A patent/JPS5921032A/ja active Granted
-
1983
- 1983-07-25 DE DE8383304301T patent/DE3379297D1/de not_active Expired
- 1983-07-25 EP EP83304301A patent/EP0100232B2/en not_active Expired - Lifetime
-
1989
- 1989-01-17 US US07/297,935 patent/US5099310A/en not_active Expired - Lifetime
- 1989-07-13 US US07/382,056 patent/US5086333A/en not_active Expired - Lifetime
-
1994
- 1994-08-02 US US08/284,277 patent/US5409864A/en not_active Expired - Lifetime
-
1995
- 1995-01-04 US US08368657 patent/US5525428B1/en not_active Expired - Lifetime
- 1995-01-04 US US08/368,636 patent/US5563101A/en not_active Expired - Lifetime
-
1996
- 1996-04-22 US US08/635,651 patent/US5708959A/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014502059A (ja) * | 2011-01-05 | 2014-01-23 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | サーマルマネージメントを向上させた電子アセンブリ |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0100232A2 (en) | 1984-02-08 |
| US5409864A (en) | 1995-04-25 |
| US5086333A (en) | 1992-02-04 |
| DE3379297D1 (en) | 1989-04-06 |
| EP0100232A3 (en) | 1985-08-21 |
| US5708959A (en) | 1998-01-13 |
| US5099310A (en) | 1992-03-24 |
| EP0100232B1 (en) | 1989-03-01 |
| US5525428B1 (en) | 1998-03-24 |
| JPS5921032A (ja) | 1984-02-02 |
| US5525428A (en) | 1996-06-11 |
| US5563101A (en) | 1996-10-08 |
| EP0100232B2 (en) | 1994-03-23 |
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