JPH0231863B2 - - Google Patents

Info

Publication number
JPH0231863B2
JPH0231863B2 JP57131026A JP13102682A JPH0231863B2 JP H0231863 B2 JPH0231863 B2 JP H0231863B2 JP 57131026 A JP57131026 A JP 57131026A JP 13102682 A JP13102682 A JP 13102682A JP H0231863 B2 JPH0231863 B2 JP H0231863B2
Authority
JP
Japan
Prior art keywords
substrate
thermal expansion
sintered body
alloy
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57131026A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5921032A (ja
Inventor
Mitsuo Osada
Yoshinari Amano
Nobuo Ogasa
Akira Ootsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=15048269&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPH0231863(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority to JP57131026A priority Critical patent/JPS5921032A/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to DE8383304301T priority patent/DE3379297D1/de
Priority to EP83304301A priority patent/EP0100232B2/en
Publication of JPS5921032A publication Critical patent/JPS5921032A/ja
Priority to US07/297,935 priority patent/US5099310A/en
Priority to US07/382,056 priority patent/US5086333A/en
Publication of JPH0231863B2 publication Critical patent/JPH0231863B2/ja
Priority to US08/284,277 priority patent/US5409864A/en
Priority to US08/368,636 priority patent/US5563101A/en
Priority to US08368657 priority patent/US5525428B1/en
Priority to US08/635,651 priority patent/US5708959A/en
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24After-treatment of workpieces or articles
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/25Arrangements for cooling characterised by their materials
    • H10W40/257Arrangements for cooling characterised by their materials having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh or porous structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/6875Shapes or dispositions thereof being on a metallic substrate, e.g. insulated metal substrates [IMS]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • H10W72/07337Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/321Structures or relative sizes of die-attach connectors
    • H10W72/325Die-attach connectors having a filler embedded in a matrix
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12014All metal or with adjacent metals having metal particles
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12014All metal or with adjacent metals having metal particles
    • Y10T428/12028Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
    • Y10T428/12049Nonmetal component
    • Y10T428/12056Entirely inorganic
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)
  • Powder Metallurgy (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
JP57131026A 1982-07-26 1982-07-26 半導体装置用基板 Granted JPS5921032A (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP57131026A JPS5921032A (ja) 1982-07-26 1982-07-26 半導体装置用基板
DE8383304301T DE3379297D1 (en) 1982-07-26 1983-07-25 Substrate for semiconductor apparatus
EP83304301A EP0100232B2 (en) 1982-07-26 1983-07-25 Substrate for semiconductor apparatus
US07/297,935 US5099310A (en) 1982-07-26 1989-01-17 Substrate for semiconductor apparatus
US07/382,056 US5086333A (en) 1982-07-26 1989-07-13 Substrate for semiconductor apparatus having a composite material
US08/284,277 US5409864A (en) 1982-07-26 1994-08-02 Substrate for semiconductor apparatus
US08368657 US5525428B1 (en) 1982-07-26 1995-01-04 Substrate for semiconductor apparatus
US08/368,636 US5563101A (en) 1982-07-26 1995-01-04 Substrate for semiconductor apparatus
US08/635,651 US5708959A (en) 1982-07-26 1996-04-22 Substrate for semiconductor apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57131026A JPS5921032A (ja) 1982-07-26 1982-07-26 半導体装置用基板

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4325582A Division JPH07105464B2 (ja) 1992-12-04 1992-12-04 半導体素子搭載用半導体装置

Publications (2)

Publication Number Publication Date
JPS5921032A JPS5921032A (ja) 1984-02-02
JPH0231863B2 true JPH0231863B2 (2) 1990-07-17

Family

ID=15048269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57131026A Granted JPS5921032A (ja) 1982-07-26 1982-07-26 半導体装置用基板

Country Status (4)

Country Link
US (6) US5099310A (2)
EP (1) EP0100232B2 (2)
JP (1) JPS5921032A (2)
DE (1) DE3379297D1 (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014502059A (ja) * 2011-01-05 2014-01-23 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング サーマルマネージメントを向上させた電子アセンブリ

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5921032A (ja) * 1982-07-26 1984-02-02 Sumitomo Electric Ind Ltd 半導体装置用基板
JPS5946050A (ja) * 1982-09-09 1984-03-15 Narumi China Corp 半導体用セラミツクパツケ−ジ
JPS5991742U (ja) * 1982-12-13 1984-06-21 鳴海製陶株式会社 半導体用パツケ−ジ
JPS59114845A (ja) * 1982-12-21 1984-07-03 Nec Corp 諸特性の改善された容器を用いた半導体装置
EP0113088B1 (en) * 1982-12-22 1989-05-24 Sumitomo Electric Industries Limited Substrate for mounting semiconductor element
JPS60239033A (ja) * 1984-05-11 1985-11-27 Tokyo Tungsten Co Ltd 複合電極材料
JPS61148843A (ja) * 1984-12-21 1986-07-07 Nec Kansai Ltd ステム
JPH065683B2 (ja) * 1985-02-25 1994-01-19 住友電気工業株式会社 半導体素子搭載用基板
DE3535081A1 (de) * 1985-10-02 1987-04-09 Vacuumschmelze Gmbh Verbundwerkstoff und verfahren zu seiner herstellung
US4788627A (en) * 1986-06-06 1988-11-29 Tektronix, Inc. Heat sink device using composite metal alloy
DE3883873T2 (de) * 1987-06-30 1994-01-05 Sumitomo Electric Industries Trägerelement für Halbleiterapparat.
JPH0671941B2 (ja) * 1987-11-18 1994-09-14 日本電気株式会社 紙葉類の給紙装置
US4942076A (en) * 1988-11-03 1990-07-17 Micro Substrates, Inc. Ceramic substrate with metal filled via holes for hybrid microcircuits and method of making the same
US5202288A (en) * 1990-06-01 1993-04-13 Robert Bosch Gmbh Method of manufacturing an electronic circuit component incorporating a heat sink
US6291424B1 (en) * 1991-11-14 2001-09-18 Brigham And Women's Hospital Nitrosated and nitrosylated heme proteins
US5315155A (en) * 1992-07-13 1994-05-24 Olin Corporation Electronic package with stress relief channel
US5413751A (en) * 1993-04-14 1995-05-09 Frank J. Polese Method for making heat-dissipating elements for micro-electronic devices
US5972737A (en) * 1993-04-14 1999-10-26 Frank J. Polese Heat-dissipating package for microcircuit devices and process for manufacture
US5886407A (en) * 1993-04-14 1999-03-23 Frank J. Polese Heat-dissipating package for microcircuit devices
US6238454B1 (en) * 1993-04-14 2001-05-29 Frank J. Polese Isotropic carbon/copper composites
EP0645804B1 (en) * 1993-09-16 2003-04-23 Sumitomo Electric Industries, Limited Metal casing for semiconductor device having high thermal conductivity and thermal expansion coefficient similar to that of semiconductor and method for manufacturing the same
USD361317S (en) 1994-05-26 1995-08-15 Wakefield Engineering, Inc. Heat sink device
US5700724A (en) * 1994-08-02 1997-12-23 Philips Electronic North America Corporation Hermetically sealed package for a high power hybrid circuit
JPH0945815A (ja) * 1995-08-03 1997-02-14 Sumitomo Electric Ind Ltd 半導体用パッケージ、該パッケージ用板状部材及びその製造方法
US5723905A (en) * 1995-08-04 1998-03-03 International Business Machines Corporation Semiconductor package with low strain seal
US5912399A (en) * 1995-11-15 1999-06-15 Materials Modification Inc. Chemical synthesis of refractory metal based composite powders
US6331731B1 (en) 1995-12-07 2001-12-18 International Business Machines Corporation Column for module component
AT411070B (de) * 1996-03-25 2003-09-25 Electrovac Verfahren zur herstellung eines substrates mit einer polykristallinen diamantschicht
US5686676A (en) * 1996-05-07 1997-11-11 Brush Wellman Inc. Process for making improved copper/tungsten composites
JP3426104B2 (ja) * 1997-05-13 2003-07-14 日立粉末冶金株式会社 半導体パッケージ用薄板部品及びその製造方法
KR100215547B1 (ko) * 1997-06-14 1999-08-16 박원훈 마이크로파 소자용 텅스텐-구리 밀폐 패키지용 용기 및 그의 제조 방법
KR100217032B1 (ko) * 1997-06-14 1999-09-01 박호군 구리 용침용 텅스텐 골격 구조 제조 방법 및 이를 이용한 텅스텐-구리 복합재료 제조 방법
JP4623774B2 (ja) * 1998-01-16 2011-02-02 住友電気工業株式会社 ヒートシンクおよびその製造方法
US6114048A (en) * 1998-09-04 2000-09-05 Brush Wellman, Inc. Functionally graded metal substrates and process for making same
JP3479738B2 (ja) * 1998-11-16 2003-12-15 株式会社アライドマテリアル 半導体パッケージと、それに用いる放熱基板の製造方法
US7083759B2 (en) * 2000-01-26 2006-08-01 A.L.M.T. Corp. Method of producing a heat dissipation substrate of molybdenum powder impregnated with copper with rolling in primary and secondary directions
US6876075B2 (en) * 2000-03-15 2005-04-05 Sumitomo Electric Industries, Ltd. Aluminum-silicon carbide semiconductor substrate and method for producing the same
JP2003152145A (ja) * 2001-08-31 2003-05-23 Sumitomo Electric Ind Ltd 半導体放熱用基板とその製造方法及びパッケージ
AT5972U1 (de) * 2002-03-22 2003-02-25 Plansee Ag Package mit substrat hoher wärmeleitfähigkeit
US6727117B1 (en) 2002-11-07 2004-04-27 Kyocera America, Inc. Semiconductor substrate having copper/diamond composite material and method of making same
KR100490879B1 (ko) * 2002-11-29 2005-05-24 국방과학연구소 균일한 조직을 갖는 텅스텐-구리(W-Cu) 합금 및 그제조 방법
KR100490880B1 (ko) * 2002-11-30 2005-05-24 국방과학연구소 텅스텐-구리 복합재료의 구리 스며나옴 억제 소결법
KR100594602B1 (ko) 2003-04-28 2006-06-30 히다치 훈마츠 야킨 가부시키가이샤 구리 기재 저열팽창 고열전도 부재의 제조 방법
DE102004020404B4 (de) * 2004-04-23 2007-06-06 H. C. Starck Gmbh & Co. Kg Trägerplatte für Sputtertargets, Verfahren zu ihrer Herstellung und Einheit aus Trägerplatte und Sputtertarget
ATE513312T1 (de) * 2004-12-20 2011-07-15 Iq Evolution Gmbh Mikrokühlkörper
JP4799069B2 (ja) * 2005-07-28 2011-10-19 Jfe精密株式会社 電子機器で用いる放熱板
JP5273922B2 (ja) 2006-12-28 2013-08-28 株式会社アライドマテリアル 放熱部材および半導体装置
JP2009252444A (ja) * 2008-04-03 2009-10-29 Nec Microwave Inc コレクタ電極及び電子管
US8009420B1 (en) * 2008-09-30 2011-08-30 Lockheed Martin Corporation Heat transfer of processing systems
KR20150103653A (ko) * 2013-01-07 2015-09-11 가부시끼가이샤 아라이도 마테리아루 세라믹 배선 기판, 반도체 장치, 및 세라믹 배선 기판의 제조 방법
DE102014114097B4 (de) 2014-09-29 2017-06-01 Danfoss Silicon Power Gmbh Sinterwerkzeug und Verfahren zum Sintern einer elektronischen Baugruppe
DE102014114096A1 (de) * 2014-09-29 2016-03-31 Danfoss Silicon Power Gmbh Sinterwerkzeug für den Unterstempel einer Sintervorrichtung
DE102014114093B4 (de) 2014-09-29 2017-03-23 Danfoss Silicon Power Gmbh Verfahren zum Niedertemperatur-Drucksintern
JP5818045B1 (ja) * 2014-12-05 2015-11-18 株式会社半導体熱研究所 放熱基板と、それを使用した半導体パッケージと半導体モジュール
CN106914623A (zh) * 2017-03-23 2017-07-04 深圳市泛海统联精密制造有限公司 金属注射成型制品表面陶瓷化的方法及其制品

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1552184A (en) * 1924-12-31 1925-09-01 Gen Electric Metal composition and method of manufacture
US1848437A (en) * 1925-08-26 1932-03-08 Mallory & Co Inc P R Metal alloy
US1860793A (en) * 1927-07-09 1932-05-31 Mallory & Co Inc P R Electrical contacting element
US2179960A (en) * 1931-11-28 1939-11-14 Schwarzkopf Paul Agglomerated material in particular for electrical purposes and shaped bodies made therefrom
NL107577C (2) * 1954-07-01
US2763822A (en) * 1955-05-10 1956-09-18 Westinghouse Electric Corp Silicon semiconductor devices
US2983996A (en) * 1958-07-30 1961-05-16 Mallory & Co Inc P R Copper-tungsten-molybdenum contact materials
NL264799A (2) * 1960-06-21
NL263391A (2) * 1960-06-21
DE1133834B (de) * 1960-09-21 1962-07-26 Siemens Ag Siliziumgleichrichter und Verfahren zu dessen Herstellung
DE1143588B (de) * 1960-09-22 1963-02-14 Siemens Ag Gesinterter Kontaktkoerper fuer Halbleiteranordnungen
US3353931A (en) * 1966-05-26 1967-11-21 Mallory & Co Inc P R Tungsten-indium powder bodies infiltrated with copper
US3423203A (en) * 1966-05-26 1969-01-21 Mallory & Co Inc P R Tungsten-indium powder bodies infiltrated with copper
US3409974A (en) * 1967-07-07 1968-11-12 Alloys Unltd Inc Process of making tungsten-based composite materials
US3685134A (en) * 1970-05-15 1972-08-22 Mallory & Co Inc P R Method of making electrical contact materials
JPS492449A (2) * 1972-04-19 1974-01-10
JPS5062776A (2) * 1973-10-05 1975-05-28
JPS5116302B2 (2) * 1973-10-22 1976-05-22
JPS5259572A (en) * 1975-11-12 1977-05-17 Hitachi Ltd Electronic circuit device
US4025997A (en) * 1975-12-23 1977-05-31 International Telephone & Telegraph Corporation Ceramic mounting and heat sink device
JPS52117075A (en) * 1976-03-27 1977-10-01 Toshiba Corp Semiconductor device
JPS603776B2 (ja) * 1977-06-03 1985-01-30 株式会社日立製作所 半導体素子
US4158719A (en) * 1977-06-09 1979-06-19 Carpenter Technology Corporation Low expansion low resistivity composite powder metallurgy member and method of making the same
JPS5471572A (en) * 1977-11-18 1979-06-08 Fujitsu Ltd Semiconductor device
DE2853951A1 (de) * 1978-12-14 1980-07-03 Demetron Kontaktplatte fuer halbleiter-bauelemente
JPS55125960A (en) * 1979-03-12 1980-09-29 Sankyo Seiki Mfg Co Ltd Automatic working device
JPS55154354A (en) * 1979-05-16 1980-12-01 Toray Silicone Co Ltd Silicone composition for treating glass fiber
JPS5630092A (en) * 1979-08-21 1981-03-26 Toshiba Corp Preparation of composite electrode material
JPS5678130A (en) * 1979-11-30 1981-06-26 Hitachi Ltd Semiconductor device and its manufacture
US4291815B1 (en) * 1980-02-19 1998-09-29 Semiconductor Packaging Materi Ceramic lid assembly for hermetic sealing of a semiconductor chip
US4427993A (en) * 1980-11-21 1984-01-24 General Electric Company Thermal stress relieving bimetallic plate
JPS57152438A (en) * 1981-03-16 1982-09-20 Hitachi Cable Ltd Thermal expansion regulating material
JPS6038867B2 (ja) * 1981-06-05 1985-09-03 株式会社日立製作所 絶縁型半導体装置
JPS5867049A (ja) * 1981-10-16 1983-04-21 Sumitomo Electric Ind Ltd 1c用パツケ−ジ
JPS5921032A (ja) * 1982-07-26 1984-02-02 Sumitomo Electric Ind Ltd 半導体装置用基板
US4451540A (en) * 1982-08-30 1984-05-29 Isotronics, Inc. System for packaging of electronic circuits
JPS5946050A (ja) * 1982-09-09 1984-03-15 Narumi China Corp 半導体用セラミツクパツケ−ジ
JPS6022345A (ja) * 1983-07-19 1985-02-04 Toyota Central Res & Dev Lab Inc 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014502059A (ja) * 2011-01-05 2014-01-23 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング サーマルマネージメントを向上させた電子アセンブリ

Also Published As

Publication number Publication date
EP0100232A2 (en) 1984-02-08
US5409864A (en) 1995-04-25
US5086333A (en) 1992-02-04
DE3379297D1 (en) 1989-04-06
EP0100232A3 (en) 1985-08-21
US5708959A (en) 1998-01-13
US5099310A (en) 1992-03-24
EP0100232B1 (en) 1989-03-01
US5525428B1 (en) 1998-03-24
JPS5921032A (ja) 1984-02-02
US5525428A (en) 1996-06-11
US5563101A (en) 1996-10-08
EP0100232B2 (en) 1994-03-23

Similar Documents

Publication Publication Date Title
JPH0231863B2 (2)
US5972737A (en) Heat-dissipating package for microcircuit devices and process for manufacture
US6238454B1 (en) Isotropic carbon/copper composites
KR20010079642A (ko) 복합 재료 및 그를 이용한 반도체 장치
CN102281973A (zh) 烧结材料、烧结结合体以及制造烧结结合体的方法
JPWO2000076940A1 (ja) 複合材料およびそれを用いた半導体装置
Bai et al. Characterization of low-temperature sintered nanoscale silver paste for attaching semiconductor devices
CN107799423A (zh) 用于生产具有至少一个过孔的金属陶瓷衬底的方法
WO1997005757A1 (en) Diamond electronic packages featuring bonded metal
JP2004128451A (ja) 低膨張材料の製造方法及び低膨張材料を用いた半導体装置
JPH022836B2 (2)
JPH0323512B2 (2)
JPH0613494A (ja) 半導体装置用基板
US20010003377A1 (en) Heat sink for a semiconductor device
JPH08279569A (ja) パッケージ用セラミックスリッド
Occhionero et al. Aluminum silicon carbide (AlSiC) for advanced microelectronic packages
Yu et al. Low Temperature, Fast Sintering of Micro-Scale Silver Paste for Die Attach for 300° C Applications
JPH11284112A (ja) ヒートシンク及びその製造方法
JPS62182182A (ja) 金属化面を有する窒化アルミニウム焼結体
JPH0323511B2 (2)
JPS61281074A (ja) メタライズ用高熱伝導性窒化アルミニウム焼結体
JPH06166573A (ja) 高熱伝導性窒化アルミニウム焼結体
JPS62108786A (ja) 金属化窒化アルミニウム体及びその製法
JPH0453836B2 (2)
JP2001332668A (ja) Al−SiC複合体