JPH0234170B2 - - Google Patents

Info

Publication number
JPH0234170B2
JPH0234170B2 JP61065539A JP6553986A JPH0234170B2 JP H0234170 B2 JPH0234170 B2 JP H0234170B2 JP 61065539 A JP61065539 A JP 61065539A JP 6553986 A JP6553986 A JP 6553986A JP H0234170 B2 JPH0234170 B2 JP H0234170B2
Authority
JP
Japan
Prior art keywords
oxygen
atoms
wafer
oxygen concentration
thermal oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61065539A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6249629A (ja
Inventor
Takanori Hayafuji
Seiji Kawato
Yoshio Aoki
Shoji Wakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP6553986A priority Critical patent/JPS6249629A/ja
Publication of JPS6249629A publication Critical patent/JPS6249629A/ja
Publication of JPH0234170B2 publication Critical patent/JPH0234170B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Local Oxidation Of Silicon (AREA)
JP6553986A 1986-03-24 1986-03-24 半導体装置 Granted JPS6249629A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6553986A JPS6249629A (ja) 1986-03-24 1986-03-24 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6553986A JPS6249629A (ja) 1986-03-24 1986-03-24 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP61037844A Division JPS61198638A (ja) 1986-02-22 1986-02-22 半導体装置

Publications (2)

Publication Number Publication Date
JPS6249629A JPS6249629A (ja) 1987-03-04
JPH0234170B2 true JPH0234170B2 (fr) 1990-08-01

Family

ID=13289920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6553986A Granted JPS6249629A (ja) 1986-03-24 1986-03-24 半導体装置

Country Status (1)

Country Link
JP (1) JPS6249629A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0551068U (ja) * 1991-12-20 1993-07-09 株式会社ヨーヅリ 潮切り用の疑似餌体

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4476390B2 (ja) * 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
DE10205084B4 (de) * 2002-02-07 2008-10-16 Siltronic Ag Verfahren zur thermischen Behandlung einer Siliciumscheibe sowie dadurch hergestellte Siliciumscheibe

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF APPLIED PHYSICS=1975 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0551068U (ja) * 1991-12-20 1993-07-09 株式会社ヨーヅリ 潮切り用の疑似餌体

Also Published As

Publication number Publication date
JPS6249629A (ja) 1987-03-04

Similar Documents

Publication Publication Date Title
US4912062A (en) Method of eliminating bird's beaks when forming field oxide without nitride mask
JPS603130A (ja) シリコン・ウエ−ハの無欠陥表面層の形成法
US4597804A (en) Methods of forming denuded zone in wafer by intrinsic gettering and forming bipolar transistor therein
JPS5917243A (ja) 半導体装置の製造方法
JPS6249629A (ja) 半導体装置
JP2861343B2 (ja) 半導体装置およびその製造方法
JPS5812732B2 (ja) 半導体装置の製法
JP2897636B2 (ja) シリコン基板の酸化方法
JP2718074B2 (ja) 薄膜半導体層の形成方法
JPH0797567B2 (ja) 薄膜の形成方法
JPS6125209B2 (fr)
JPS5839014A (ja) 半導体装置の製造方法
KR100248818B1 (ko) 반도체장치의 소자 분리방법
JP3272908B2 (ja) 半導体多層材料の製造方法
JP3128904B2 (ja) 多結晶シリコンパターンの形成方法
JPS61124127A (ja) 半導体装置の製造方法
JPH0494120A (ja) 半導体装置の製造方法
JPS593869B2 (ja) シリコンゲ−ト型電界効果半導体装置の製造方法
JPS60175416A (ja) 半導体装置の製造方法
JPH0346972B2 (fr)
JPH01260832A (ja) 半導体素子の製造方法
JP2743451B2 (ja) 半導体装置の製造方法
JPS5819126B2 (ja) 半導体装置の製造方法
JPS63124571A (ja) 半導体装置の製造方法
JPH0396223A (ja) Ｓｏｉ構造の形成方法