JPH0235421B2 - - Google Patents

Info

Publication number
JPH0235421B2
JPH0235421B2 JP60249691A JP24969185A JPH0235421B2 JP H0235421 B2 JPH0235421 B2 JP H0235421B2 JP 60249691 A JP60249691 A JP 60249691A JP 24969185 A JP24969185 A JP 24969185A JP H0235421 B2 JPH0235421 B2 JP H0235421B2
Authority
JP
Japan
Prior art keywords
secondary electron
sample
spectrometer
extraction electrode
auxiliary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60249691A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62110245A (ja
Inventor
Katsumi Ura
Hiroshi Fujioka
Koji Nakamae
Susumu Takashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Osaka NUC
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Osaka University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Osaka University NUC filed Critical Nippon Telegraph and Telephone Corp
Priority to JP60249691A priority Critical patent/JPS62110245A/ja
Publication of JPS62110245A publication Critical patent/JPS62110245A/ja
Publication of JPH0235421B2 publication Critical patent/JPH0235421B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP60249691A 1985-11-07 1985-11-07 強二次電子引き出し電界を持つ二次電子分光装置 Granted JPS62110245A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60249691A JPS62110245A (ja) 1985-11-07 1985-11-07 強二次電子引き出し電界を持つ二次電子分光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60249691A JPS62110245A (ja) 1985-11-07 1985-11-07 強二次電子引き出し電界を持つ二次電子分光装置

Publications (2)

Publication Number Publication Date
JPS62110245A JPS62110245A (ja) 1987-05-21
JPH0235421B2 true JPH0235421B2 (2) 1990-08-10

Family

ID=17196766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60249691A Granted JPS62110245A (ja) 1985-11-07 1985-11-07 強二次電子引き出し電界を持つ二次電子分光装置

Country Status (1)

Country Link
JP (1) JPS62110245A (2)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5202348A (en) * 1989-12-07 1993-04-13 The University Of British Columbia Thiarubrine antifungal agents
JP4519567B2 (ja) * 2004-08-11 2010-08-04 株式会社日立ハイテクノロジーズ 走査型電子顕微鏡およびこれを用いた試料観察方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3138901A1 (de) * 1981-09-30 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Verbessertes gegenfeld-spektrometer fuer die elektronenstrahl-messtechnik

Also Published As

Publication number Publication date
JPS62110245A (ja) 1987-05-21

Similar Documents

Publication Publication Date Title
US6091249A (en) Method and apparatus for detecting defects in wafers
US5030908A (en) Method of testing semiconductor elements and apparatus for testing the same
US4980639A (en) Method and apparatus for testing integrated electronic device
US4413181A (en) Arrangement for stroboscopic potential measurements with an electron beam testing device
US20230288355A1 (en) Electron spectroscopy based techniques for determining various chemical and electrical characteristics of samples
May et al. Picosecond photoelectron scanning electron microscope for noncontact testing of integrated circuits
JPH0312772B2 (2)
US4855673A (en) Electron beam apparatus
US5053699A (en) Scanning electron microscope based parametric testing method and apparatus
JP3151670B2 (ja) イオンビームを用いて電位測定を行うイオンビーム装置及び方法
JPH0235421B2 (2)
Plies Secondary electron energy analyzers for electron-beam testing
US7205539B1 (en) Sample charging control in charged-particle systems
JP2631290B2 (ja) イオンビーム加工装置
JPH0758297B2 (ja) 非接触電位測定装置
JPS6089050A (ja) ストロボ走査電子顕微鏡
Dinnis Detectors for quantitative electron beam voltage measurements
JPH0815173B2 (ja) 半導体集積回路の動作評価方法
TW202431322A (zh) 用於非接觸電流電壓量測裝置的帶電粒子系統之設備
JPH1074808A (ja) 荷電粒子線を用いた理化学装置,半導体製造及び検査装置
JPS62154543A (ja) 荷電ビ−ム装置
JPS62150642A (ja) 荷電ビ−ムを用いた電位測定装置
Shirasaki et al. Gate leakage evaluation of GAA transistors using SEMs
Dinnis et al. Micro-extraction spectrometers for voltage contrast in the SEM
JP2002064127A (ja) 試料検査装置