JPH0235437U - - Google Patents

Info

Publication number
JPH0235437U
JPH0235437U JP11397388U JP11397388U JPH0235437U JP H0235437 U JPH0235437 U JP H0235437U JP 11397388 U JP11397388 U JP 11397388U JP 11397388 U JP11397388 U JP 11397388U JP H0235437 U JPH0235437 U JP H0235437U
Authority
JP
Japan
Prior art keywords
electrode
substrate
processed
electric field
field uniformity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11397388U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11397388U priority Critical patent/JPH0235437U/ja
Publication of JPH0235437U publication Critical patent/JPH0235437U/ja
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案電極の一実施例を適用した半導
体製造装置の要部の縦断面図、第2図〜第4図は
本考案における高周波供給源及び直流電源部の各
種接続構成例を示す説明図、第5図は従来の静電
吸着形高周波印加電極を使用した半導体製造装置
の要部の縦断面図、第6図は従来における静電吸
着用電極を埋め込んだ板状絶縁物の例と寸法を示
す説明図である。 1……真空容器、2……静電吸着用電極、3a
……板状絶縁物、4……被処理基板、5a……構
造物、9……高周波供給源、10……直流電源、
14……表面、15……電界均一用電極、16…
…ヒータまたは冷却用パイプ、17……第1給電
リード部、18……第2給電リード部。
Fig. 1 is a vertical cross-sectional view of the main parts of a semiconductor manufacturing device to which an embodiment of the electrode of the present invention is applied, and Figs. 2 to 4 show examples of various connection configurations of the high frequency supply source and the DC power supply section of the present invention. Explanatory drawings, Fig. 5 is a vertical cross-sectional view of the main part of a semiconductor manufacturing equipment using a conventional electrostatic adsorption type high-frequency application electrode, and Fig. 6 is an example of a plate-shaped insulator in which a conventional electrostatic adsorption electrode is embedded. It is an explanatory view showing dimensions. 1... Vacuum container, 2... Electrostatic adsorption electrode, 3a
... Plate-shaped insulator, 4 ... Substrate to be processed, 5a ... Structure, 9 ... High frequency supply source, 10 ... DC power supply,
14... Surface, 15... Electrode for electric field uniformity, 16...
...Heater or cooling pipe, 17...First power supply lead part, 18...Second power supply lead part.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 真空容器1内に被処理基板4より小さな板状絶
縁物3aを配置し、この板状絶縁物3aの表面1
4から多くとも1mm以内に、被処理基板4を静電
吸着する静電吸着用電極2を埋設し、板状絶縁物
3aの裏面に、被処理基板4の周辺部の電界を均
一にする当該被処理基板4より少なくとも10mm
以上大きな電界均一用電極15を接触せしめ、こ
の電界均一用電極15にはヒータまたは冷却用パ
イプ16を内設し、静電吸着用電極2に直流電圧
と高周波を印加する第1給電リード部17を、電
界均一用電極15には高周波を印加する第2給電
リード部18をそれぞれ真空容器1外に引出すと
共に、被処理基板4の周囲部下面に入り込む構造
物5aを配置せしめてなる静電吸着形高周波印加
電極。
A plate-shaped insulator 3a smaller than the substrate 4 to be processed is arranged in the vacuum container 1, and the surface 1 of this plate-shaped insulator 3a is
An electrostatic adsorption electrode 2 for electrostatically adsorbing the substrate 4 to be processed is embedded within 1 mm at most from the substrate 4, and an electrode 2 for electrostatic adsorption is buried on the back surface of the plate-shaped insulator 3a to make the electric field uniform around the substrate 4 to be processed. At least 10mm from the substrate to be processed 4
A first power supply lead portion 17 is brought into contact with the electric field uniformity electrode 15 having a large electric field uniformity, and a heater or cooling pipe 16 is installed inside the electric field uniformity electrode 15, and a DC voltage and high frequency are applied to the electrostatic adsorption electrode 2. , the second power supply lead part 18 for applying a high frequency to the electric field uniformity electrode 15 is pulled out of the vacuum chamber 1, and a structure 5a that enters the lower surface around the substrate 4 to be processed is arranged. shaped high frequency application electrode.
JP11397388U 1988-08-29 1988-08-29 Pending JPH0235437U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11397388U JPH0235437U (en) 1988-08-29 1988-08-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11397388U JPH0235437U (en) 1988-08-29 1988-08-29

Publications (1)

Publication Number Publication Date
JPH0235437U true JPH0235437U (en) 1990-03-07

Family

ID=31354297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11397388U Pending JPH0235437U (en) 1988-08-29 1988-08-29

Country Status (1)

Country Link
JP (1) JPH0235437U (en)

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