JPH0237346A - Device and method for correcting pattern - Google Patents

Abstract

PURPOSE:To easily specify a correction part and to confirm the correction by comparing an optical microscope image of an object to be corrected observed by an optical microscope system with the surface image of the object obtained by an image extracting means. CONSTITUTION:The title device is constituted so as to specify a correction part of the object 80 or to discriminate the correction by comparing an optical microscope image of the object 80 observed by an optical microscope system 21 with the surface image of the object 80 obtained by an image extracting means 2. In such a manner, even if the emission efficiency of a secondary electron is deteriorated due to electrification of the object by irradiating an ion beam, and it becomes difficult to specify its correction part by surface image, it can be executed easily to specify the correction part and to decide whether the correction is good or not by observing the optical microscope image.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is applicable to correction of defects in a circuit pattern original plate (hereinafter referred to as "mask") used in the exposure process of lithography and correction of wiring patterns of semiconductor integrated circuit devices. The present invention relates to a pattern correction apparatus and a method thereof.

[Conventional technology]

Lithography technology is usually used when forming circuit patterns in the manufacturing process of semiconductor integrated circuit devices. This technology basically consists of a coating process in which a photoresist is applied onto a substrate, an exposure process in which a mask with a predetermined pattern is irradiated with an appropriate light source and the pattern is transferred to the photoresist, and a photoresist is transferred to the photoresist. It consists of a developing process in which a photoresist with a predetermined pattern is obtained by developing it.

Figure 8 Mask 8 used in the exposure process of beam lithography
FIG. In the figure, 81 is a glass substrate, and a mask pattern 82 made of chromium, chromium oxide, etc. is formed on this glass substrate 81.

By the way, a mask 80 as shown in the figure usually has spot defects 83. There are pinhole defects 84, foreign matter 85, etc. (hereinafter referred to as "defects etc.").

Here, the spot defect 83 is a defect in which a substance (chromium, chromium oxide, etc.) constituting the mask pattern 82 is present in an area of the surface area of the glass substrate 81 other than the area where the mask pattern 82 is formed. If the exposure process is performed using a mask while the spot defects 83 are present, the spot defects 83 will be transferred onto the substrate and an extra pattern will be formed.

Further, the pinhole defect 84 is a defect in which a pinhole (hole) exists in the mask pattern 82, and if the exposure process is performed using the mask 80 while the pinhole defect 84 is present, the spot defect 83 will be Contrary to the case, the pattern at the position corresponding to the pinhole defect 84 is missing.

Further, the foreign matter 85 is photoresist residue, dust, etc., and the mask pattern 85 in the surface area of the glass substrate 81
Foreign matter 85 adheres to an area other than the area where is formed,
If the exposure process is performed using this mask as it is, an extra pattern corresponding to the foreign matter 85 will be transferred onto the substrate as in the case of the spot defect 83.

That is, if the exposure process is performed while the above-mentioned defects and the like are present in the mask 80, accurate pattern formation will not be possible, and the yield of semiconductor integrated circuit devices will be significantly reduced. Therefore, it is of great significance to correct defects and the like existing in the mask 80, and conventionally the mask 80 has been corrected using an apparatus as shown in FIG.

FIG. 9 is a basic configuration block diagram of a conventional pattern correction device. As shown in the figure, pattern correction ￥! The device is
The ion beam irradiation means 1 irradiates the mask 80, which is the object to be corrected, with the ion beam, and the surface image of the mask 80 (hereinafter referred to as [Sl 1 VIJ)] is created based on the secondary electrons generated when the ion beam is irradiated onto the mask 80. It consists of an image extracting means 2 for obtaining the image, a sample stage 3, etc.

The ion beam irradiation means 1 includes an ion source (chip) 4, an ion beam extraction electrode 5. Blanking electrode 6. An ion beam focusing electrostatic lens 8 consisting of an aperture and first to third lens electrodes 8a to 8C. Stigmator 9. Deflector 10. Ion acceleration power source 11. Drawer power supply 1
2. Blanka controller 13. Lens voltage power supply 14.
It is composed of a stigma controller 15 and a deflector controller 16.

That is, a high voltage of, for example, 4 to 5 KV or more is applied between the ion source (chip) 4 made of a liquid metal ion source such as gallium (Ga) and the ion beam extraction electrode 5 by the ion acceleration power source 11 and the extraction power source 12. An ion beam 17 is extracted from the tip of the ion source (chip) 4. The extracted ion beam 17 is made incident between blanking sections 1446. The blanking electrode 6 controls the on/off of the ion beam 17, and is connected to the blanking electrode 6 from the blanker controller 13.
When a predetermined voltage is applied to the ion beam 17, the ion beam 17 is deflected and the aperture blocks the ion beam 17 from irradiating the mask 80, whereas when the predetermined voltage is not applied, the ion beam 17 is deflected to the center of the aperture. It passes through the provided opening 7a.

The ion beam 17 that has passed through the aperture 7a is incident on the ion beam focusing electrostatic lens 8, and depending on the voltage applied to the focusing electrostatic lens 8 from the lens voltage power supply 14, the ion beam 17 is focused on the mask 80, which is the target, and has a diameter. 0.1-0.3μm
focused to a degree.

The ion beam 17 that has passed through the focusing electrostatic lens 8 is incident on the stigmator 9, and after being shaped by the stigmator 9 based on the voltage applied from the stigmator controller 15, the ion beam 17 is transmitted through the deflector controller 16. The mask 80 is scanned in the X and Y directions by a deflector 510 to which an appropriate voltage is applied.

The image extraction means 2 includes a secondary electron detector 18 and a CRTI
9, and the ion beam 1 is placed on the mask 80.
Secondary electrons 2 emitted from the irradiated area when 7 is irradiated
0 is detected by the secondary electron detector 18, and the output of the detector 18 is synchronized with the scanning of the ion beam 17 based on the signal from the deflector controller 16 to perform CRTI.
It is configured to display an 81M image on 9.

In other words, the pattern correction device shown in FIG. 9 has the function of a scanning ion microscope (SIM) in addition to the function of simply irradiating the surface of the mask 80 with the ion beam 17 to correct the pattern of the mask 80. I can say that it is.

Next, a method for correcting defects and the like existing in the mask 80 using this pattern correction apparatus will be described with reference to No. 10. First, the ion beam 17 is scanned over a region of the surface of the mask 80 where a defect or the like exists. and,
An 81M image of the area where defects etc. exist is displayed on the CRTI 9 by the image extraction means 2, and this 81M image is observed (
Step 81). In addition, for the convenience of comparing the 81M image after pattern correction and determining whether the pattern correction has been completely performed after pattern correction, the data obtained in step $1 is stored in an image memory (not shown). 5II
VI is stored (step S2).

Then, by observing this SIM@, the type of defect, etc. on the mask 80 and its position are specified (step S2), and an appropriate 51! The pattern of the mask 80 is corrected by performing the second process. In other words, the defect etc. is a spot defect 8
3 (FIG. 8), the voltage applied from the blanker controller 13 to the blanking electrode 6 and the voltage applied from the deflector controller 16h to the deflector 10 are adjusted to inject high-energy ions only into the spot defect 83. beam 17
is irradiated, and the spot defect 83 is removed by sputtering to correct the pattern. In addition, the defect etc. may be caused by foreign matter 85 (8th
In the case shown in FIG. 1, the mask 80 is taken out from the pattern correction device, and the foreign matter 85 is removed by cleaning or the like using another device. In the case of a pinhole defect 84 (FIG. 8), a metal gas such as tungsten hexafluoride (WF6) (or a hydrocarbon gas such as ethanol (C2'r-1508)) is applied to the surface of the mask 80. The ion beam 1 is supplied only to the pinhole defect 84 by adjusting the voltage applied from the blanker controller 13 to the blanking electrode 6 and the voltage applied from the deflector controller 16 to the deflector 10.
3, the gas in the beam irradiation area is decomposed and a metal layer (or carbon film) is formed on the pinhole defect 84 portion, thereby correcting the pattern.

Furthermore, after the correction, the 81M image at that position is observed again to check whether the above correction has been completely executed (step S9).
, if additional correction is necessary, return to step S2 again.
The correction work is performed by repeating the above series of work.

(Problem to be Solved by the Invention) As described above, in conventional pattern correction, the 81M image is first displayed on the CR plate 19 and the 81M image is observed to identify the type of defect and its position. Therefore, in the following cases, it becomes difficult to identify the corrected part or confirm the correction.

(In the case of 11 SIM (m), since the positively charged ion beam 17 such as gallium ions is irradiated onto the surface of the mask 80, the surface of the mask 80 becomes positively charged, and the emission efficiency of the secondary electrons 20 deteriorates. Especially , in the case of an isolated pattern, it may be difficult to obtain a clear 81M image.The reason for this is that in the case of an isolated pattern, the ion beam 17
This is because the amount of positive charges per unit area becomes high because the dispersion area of the positive charges generated with the irradiation is narrow. As mentioned above, if a clear 81M image cannot be obtained, 1g of the SIM image! This makes it difficult to identify the corrected parts.

(2) In the case of an 81M image, it is possible to confirm the pattern shape, but it is not possible to determine the material. Therefore, for example, when a spot defect and a foreign object coexist, it is impossible to determine whether the defect or the like is a spot defect or a foreign object. As a countermeasure against this, when the surface of the mask 80 is irradiated with the ion beam 17, secondary ions emitted from the irradiated area are detected at the same time as the secondary electrons 20, and these secondary ions are analyzed using the well-known mass spectrometry method. It is conceivable to use this method to determine the material of the irradiated part.
This method poses a practical problem because it results in judgments with considerably low accuracy. The reason for this is that the yield of secondary ions (ratio of secondary ions released from the irradiated area by irradiating one ion) is extremely low, resulting in poor shell resolution and spatial resolution. . As described above, when the material of a defect or the like cannot be identified, it is not possible to perform appropriate treatment corresponding to the defect or the like.

(3) Confirmation of the pattern correction executed in step S9 is performed based on the SIM (ml) obtained by re-irradiating the ion beam 17 to the part where the pattern correction has been performed, but the part that requires confirmation is Since the secondary electrons 20 are already positively charged due to the ion beam irradiation during pattern correction, the emission efficiency of the secondary electrons 20 is poor, and the 81
It becomes difficult to confirm pattern correction using the M image.

(4) The above has described pattern correction of the mask 80 used in the exposure process of lithography, but the above pattern correction apparatus and method can also be applied to pattern correction of semiconductor integrated circuit devices in addition to the mask 80. Yes, - used in membranes. However, if the modification location of the semiconductor integrated circuit device is not on the top layer, it becomes difficult to confirm the modification location. For example, let us consider the case where the pattern of the semiconductor integrated circuit device @70 shown in FIG. 7(a) is corrected.

FIG. 7(a) is a partial sectional view of the semiconductor integrated circuit device 70. As shown in the figure, a lower layer wiring 72 made of AI, W, Ta, poly-Si, metal silicide, etc. is formed on an insulating layer 71 made of SiO2, SN, etc.; An insulating layer 73 made of 02, SiN, etc. is formed, and an upper layer wiring 74 is formed in the insulating layer 73 to be perpendicular to the lower layer wiring 172. An 81M image seen from above of this semiconductor integrated circuit device 70 is shown in FIG. 7(b), and as shown in the same figure, the SIM
The lower layer wiring 72 is not captured at all in the image 7Qa, and confirmation of this will be a national disaster. The reason is - 5II in the membrane
This is because the VI mainly detects the surface condition of the object to be inspected and displays brightness and darkness according to the surface condition, so that almost no area other than the top layer is extracted as SIMll&.

The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a pattern modification device and method that can easily identify a modification location and confirm the modification.

[Means to solve the problem]

The pattern correction apparatus according to the present invention includes an ion beam irradiation means for irradiating an object to be corrected with an ion beam, and a surface of the object to be corrected based on secondary particles generated when the object to be corrected is irradiated with the ion beam. image extraction means for obtaining an image;
An optical microscope image of the object to be corrected is 1! an optical microscope system for observing the object to be corrected; a moving means for moving the object to be corrected between a position where the ion beam can be irradiated and a position where the optical microscope image can be observed; The apparatus further includes a determining means for identifying a correction location of the object to be corrected or confirming the correction by comparing an optical microscope image of the object with a surface image of the object to be corrected obtained by the image extracting means.

The pattern correction method according to the present invention includes a first step of observing an optical microscope image of the object to be corrected, and a step of irradiating the object to be corrected with an ion beam and based on the secondary particles generated at that time. a second step of obtaining a surface image; and a third step of comparing the surface image of the object to be corrected with the optical microscope image to identify a correction location of the object to be corrected or to determine correction. I'm here.

[Effect]

The pattern correction device and method according to the present invention include:
Since the optical microscope image and the surface image of the object to be corrected are compared to identify the repaired part of the object or to determine whether the correction is successful or not, secondary electrons are generated due to the charging of the object by ion beam irradiation. Even if the emission efficiency deteriorates and it becomes difficult to identify the repaired area or judge whether the correction is good or bad using the surface image, it is easy to identify the correction place or judge whether the correction is good or bad by observing the optical microscope a image. It can be carried out.

〔Example〕

FIG. 1 is a block diagram showing an embodiment of a pattern correction device according to the present invention. As shown in the figure, the pattern correction device includes ion beam irradiation means 1 and image extraction means 2.
, an optical microscope system 21 for observing the optical microscope image of the mask 80, and a moving means 22 for moving the mask 80 between a position where the 81M image can be observed and a position where the optical microscope image can be observed. has been done.

Since the ion beam irradiation means 1 and the image extraction means 2 have the same configuration as the conventional example, they will be given the same reference numerals and their explanation will be omitted here.

The optical microscope system 21 includes an optical microscope 239, a reflection illumination 24. Transmission illumination 25. It is composed of an image sensor 26 such as a CCD and a CRT 27.

That is, the light emitted from the reflective illumination 24 is irradiated onto the surface of the mask 80 which is the object to be inspected, the light reflected by the surface of the mask 80 is imaged on the Wi image element 26, and the output signal of the image sensor 26 is Based on this, an optical microscope image of the surface of the mask 80 is displayed on the CRT 27, or the light emitted from the transmission illumination 25 is irradiated onto the back surface of the mask 80, and the transmitted light is imaged on the image pickup device 26, and the same as above. The optical microscope image of the mask 80 is displayed on the CRT 27. Note that by appropriately switching the objective lens attached to the optical microscope 23, the observation magnification of the optical microscope image can be changed.

The moving means 22 is an X-Y table 28. Laser interferometer 29
and a table controller 30, and these laser interferometers 29 control the X-Y table 28.
In addition to detecting the position of the table controller 30
Accordingly, the X-Y table 28 is positioned with high accuracy by conventionally known positioning control.

Next, a method of correcting the mask 80 used in the exposure process of lithography using the pattern correction apparatus described above will be described with reference to FIG.

FIG. 2 is an operational flowchart showing an embodiment of the pattern correction method according to the present invention.

First, a mask 80 as an object to be inspected is mounted on the X-Y table 28, and the X-Y table 28 is moved to bring a portion to be pattern corrected, that is, a defect, etc. into the field of view of the optical microscope 23. At this time, the location of defects, etc. is usually already known from the results of an inspection performed using another 81 before this pattern correction, but it is also possible to search for defects, etc. using this device. It is. In that case, optical microscope 2
It is desirable to set the magnification of 3 to a relatively low magnification (for example, about 50 to 100 times).

Next, when a defect etc. enters the field of view of the optical microscope 23, the magnification of the optical microscope 23 is switched to an appropriate value and the CRT 27
A reflected or transmitted optical microscope image is observed through (step 510). At this time, for the convenience of comparing this microscope image with the SrM image observed in the next step,
The reflection or transmission or both optical microscopic VT images are stored in an image memory (not shown) (step 511).

After that, move the X-Y table 28 and step 81
At 0, defects in the mask 80 that are 1[] are brought into the field of view of the ion beam irradiation means 1. The amount of movement at this time is controlled by the table controller 30 based on the position data of the XY table 28 measured by two laser interferometers during observation of the image of the optical microscope 11'l (step 89).

Then, the ion beam 17 is scanned over a region including defects and the like to observe a 31M image (step S1), and it is stored in the image memory (step S2).

Next, the optical microscope vL observed in step 810
The image is compared with the SIM image observed in step S1 to identify the type and position of defects in the mask 80 (step $3'). Note that the types of defects and the method for specifying their positions will be explained in detail later.

Then, similar to the conventional method, corrections are made in accordance with the type of defect etc. (steps 84 to 88).

In addition, the X-Y table 28 is moved to bring the repaired part of the mask 80 into the field of view of the optical microscope 11123,
It is checked whether the above-mentioned corrections have been completely executed by observing the optical microscope image (step S9), and if additional corrections are necessary, the process returns to step 311 and the above-mentioned series of operations are repeated. Perform correction work.

Next, the method of specifying the type of defect and its position performed in step S3' will be explained in detail in four cases.

(1) Foreign matter 85 in a part of the mask 80 (Fig. 8)
A method for identifying both the defect 83 and the isolated spot defect 83 (FIG. 8) will be described below.

FIG. 3(a) is a SIM image 80a of a region where an isolated spot defect 83 and foreign matter 85 are present, and FIG. 3(b) is a reflection optical microscope image 80b thereof. In the figure, 81a
, 81b are the SUM image 1 reflection optical microscope vi image of the glass surface 80 (FIG. 8), 82a and 82b are the SIM image 9 reflection optical microscope VT image of the mask pattern 82, respectively, and 83a.

83b is the SIMI of the spot defect 83, respectively.

These are reflection optical microscope images, and 85a and 85b are SIM image 1 reflection optical microscope images of the foreign object 85, respectively.

As shown in FIG. 3(a), when a foreign object image 85a and an isolated spot defect image 83a are present in the SIM image 80, the S
It is difficult to distinguish between the two using IMI.

This is because SIM (If) is information only about the difference in secondary electron emission ratio on the surface of the mask 80, and therefore only the irregularities on the sample surface can be identified.

However, in the reflected optical microscope image 8ob of the same location, there is a difference in brightness between the spot defect image 83b and the foreign object image 85b, making it easy to distinguish between them. The reason is,
The spot defect 83 is made of a metal such as chromium, and the spot defect image 83b, which is a reflected optical microscope image thereof, has a metallic luster. This is because it is observed in a dark manner.

Therefore, even if a foreign object image 85a and an isolated spot defect image 83a exist in the SUM image 80 as shown in FIG. 3(a), they can be easily identified by observing the optical microscope image 80b. Can be done.

(2) A method for specifying the position of a small isolated spot defect 83 (FIG. 8) when it exists in a partial area of the mask 80 will be described.

FIG. 4(a) is a SIM image 80a of a region where a small isolated spot defect 83 exists, and FIG. 4(b) is a reflection optical microscope image 80b thereof. When the isolated spot defect 83 is small, as described above, the small isolated spot defect 8
As shown in FIG. 4(a), it may be difficult to find the isolated spot defect image 83a in the SIM\#80a due to the deterioration in the emission efficiency of secondary electrons due to the charging. In this case, the isolated spot defect 83 may be overlooked.

However, in the reflected optical microscope image 8ob of the same location, the spot defect image 8ob is the reflected optical microscope image.
3b is not affected in any way by the charging of the spot defect 83 and is therefore clearly observed as shown in FIG. 4(b).

Therefore, if a small isolated spot defect 83 exists in a partial area of the mask 80, the optical microscope image 80
By observing b, the position of the spot defect 83 can be easily specified.

(3) A method for identifying foreign matter 85 (FIG. 8) and pinhole defect 84 (FIG. 8) when both exist in mask pattern 82 will be described.

FIG. 5(a) is a SIM image 80a of a region where a pinhole defect 84 and foreign matter 85 exist, FIG. 5(b) is a reflection optical microscope image 80b thereof, and FIG. It is a transmission optical microscope e80c. As shown in FIG. 5(a), when a foreign object image 85a and a pinhole defect image 84a exist within the SIM image 80, it is difficult to distinguish between the two using SIMlil. This is because, as described above, since the 31M image contains information only about the difference in secondary electron emission ratio on the surface of the mask 80, only the irregularities on the sample surface can be identified.

However, in the reflection optical microscope image 80b of the same location, a difference in brightness occurs between the pinhole defect image 84b and the foreign object image 85b, and it is easy to distinguish between the two. The reason is that since the pinhole defect 84 penetrates the mask pattern 82, the pinhole defect @84b is equivalent to the reflected optical microscope image of the glass surface 81 (glass surface image 81b), while the foreign matter 85 is This is because it is observed brighter than the image 81b.

Therefore, even if a foreign object image 85a and a pinhole defect image 84a exist in the SIM image 80 as shown in FIG. 5(a), they can be easily identified by observing the optical microscope image 80b. Can be done.

In addition, when using the transmission optical microscope image of FIG. 5(C), the pinhole defect image 8 is
Since only the pinhole defect 84 is observed, the presence of the pinhole defect 84 can be more clearly confirmed.

(4) Confirmation of spot defect correction is performed as follows.

FIG. 6(a) is a SIM image 80a of a repaired portion of an isolated spot defect 83 after repair, and FIG. 6(b) is a reflection optical microscope image 80b thereof. After the isolated spot defect 83 has been repaired, the repaired part is charged, which deteriorates the secondary electron emission efficiency, and as shown in FIG. It may be difficult to find the defective image 83a in the isolated spot 1 in the image 61a, and it may not be possible to confirm the correction.

However, in the reflected optical microscope image 8ob of the same location, the spot defect image 8ob is the reflected optical microscope image.
3b (reflection optical microscope image 61b of the corrected portion) is not affected by the charging of the spot defect 83 and is therefore clearly observed as shown in FIG. 6(b).

Therefore, by observing the optical microscope image 80b after the correction, it is possible to easily and accurately determine whether the correction is good or bad.

As described above, it is possible to not only observe the 5IIIVI of the mask 80 used in the exposure process of lithography, but also to observe the optical microscope image and identify the types and positions of defects, etc., present in the mask 80. Can be done, mask 80
It is possible to easily identify the corrected parts. Furthermore, by observing the optical microscope image again after the correction, it is possible to easily determine whether the correction is successful or not.

Further, by using the above-mentioned apparatus, it is possible to easily identify the repaired portion of the semiconductor integrated circuit device 70 shown in FIG. 7(a) and determine whether the repair is successful or not. Figure 7(b) is Figure 7(a)
FIG. 7C is a reflection optical microscope image 70b of the top surface of the semiconductor integrated circuit device 70 shown in FIG. As shown in FIG. 7(b), the SIM image 70a does not show any image of the lower layer wiring 72, making it difficult to confirm its position, but the reflection optical microscope image 70b shows that the insulating layer 73 is exposed to light. As shown in FIG. 7(C), an image 72b of the lower layer wiring 72 can be observed. Therefore, similarly to the above, it is possible to easily identify the defective part and confirm whether the correction is successful or not.

In the above embodiment, pattern correction of the mask 80 and the semiconductor integrated circuit device 70 used in the exposure process of lithography has been described, but the present invention is not limited to these.
It is also applicable to pattern correction of line masks.

Furthermore, in the above embodiment, the surface image of the mask 80 is obtained based on the secondary electrons 20 emitted from the irradiated area when the ion beam 17 is irradiated, but the ion beam 17 is irradiated instead of the secondary electrons 20. A surface image of the mask 80 may be obtained based on other secondary particles (secondary ions, X-rays, photons, etc.) emitted from the irradiated portion when the irradiation is performed.

Further, in the above embodiment, the 31M image and the optical microscope image are each stored in the image memory; however, instead of the image memory, the SIM image and the optical microscope image may be stored in a storage means such as a photograph.

〔Effect of the invention〕

As described above, the pattern correction device according to the present invention compares the optical microscopic image of the object to be corrected observed by the optical microscope system and the surface image of the object to be corrected obtained by the image extraction means. Since the structure is configured such that the correction location of the object to be corrected is identified or the correction is determined by using the ion beam irradiation, the emission efficiency of secondary electrons deteriorates due to charging of the object to be corrected due to ion beam irradiation, and the surface image does not show that. Even if it becomes difficult to specify the corrected area, the effect is that the corrected area can be easily identified and the quality of the correction can be determined by observing the optical microscope image.

Further, according to the pattern correction method according to the present invention, an optical microscope image of the object to be corrected is observed, an ion beam is irradiated to the object to be corrected, and based on secondary particles generated at that time, the object to be corrected is After obtaining a surface image, the surface image and the optical microscope image are compared to identify the repaired portion of the object to be repaired or to determine whether the correction should be made, so that the same effect as described above can be obtained.

[Brief explanation of the drawing]

FIG. 1 is a schematic configuration diagram showing an embodiment of a pattern correction device according to the present invention, FIG. 2 is a flowchart showing an embodiment of a pattern correction method according to the invention, and FIG. 3(a)
Figure 3(b) shows a SIM image of a region where an isolated spot defect and a cheap item exist, Figure 3(b) shows a reflection optical microscope image thereof, and Figure 4(a) shows an area where a small isolated spot defect exists. 4(b) is a diagram showing the reflection optical microscope li&, FIG. 5(a) is a diagram showing the SIM@ of the region where pinhole defects and foreign matter exist, FIG. (b
) shows a reflection optical microscope image of the same, FIG. 5(C) shows a transmission optical microscope image of the same, and FIG. 6(a) shows a SIM image of the corrected part after completing correction of the isolated spot defect 83. 6(b) is a diagram showing a reflection optical microscope image thereof, FIG. 7(a) is a partial sectional view of the semiconductor integrated circuit device, FIG. 7(b) is a diagram showing its SIM image, and FIG. Figure (C) shows the reflective optical microscope 511m, Figure 8 is a perspective view of the main part of a mask used in the exposure process of beam lithography, Figure 9 is a diagram showing the basic configuration of a conventional pattern correction device, and Figure 10 is a diagram showing the basic configuration of a conventional pattern correction device. The figure is a flowchart showing a conventional pattern correction method. In the figure, 1 is an ion beam irradiation means, 2 is an image extraction means, 21 is an optical microscope system, 22 is a moving means, 7
0 is a semiconductor modification circuit device, 80 is a mask, 81.83'
, 84, 810 are steps. Note that the same reference numerals in each figure refer to the same or corresponding parts.

Claims (2)

[Claims] (1) An ion beam irradiation means for irradiating an object to be corrected with an ion beam;
an image extracting means for obtaining a surface image of the object to be corrected based on secondary particles; an optical microscope system for observing an optical microscope image of the object to be corrected; and a position and optical system where the object to be corrected can be irradiated with an ion beam. a moving means for moving between a position where a microscope image can be observed; an optical microscope image of the object to be corrected observed by the optical microscope system; and a surface image of the object to be corrected obtained by the image extracting means. and determining means for identifying a repaired portion of the object to be repaired or confirming the correction by comparing the patterns with the pattern correction device. (2) The first step is to observe the optical microscope image of the object to be corrected, and the ion beam is irradiated to the object to be corrected.
a second step of obtaining a surface image of the object to be corrected based on secondary particles; and a second step of comparing the surface image of the object to be corrected and the optical microscope image to identify or correct a correction location of the object to be corrected. A pattern correction method characterized by comprising a third step of performing discrimination.