JPH0239268B2 - - Google Patents

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Publication number
JPH0239268B2
JPH0239268B2 JP59210436A JP21043684A JPH0239268B2 JP H0239268 B2 JPH0239268 B2 JP H0239268B2 JP 59210436 A JP59210436 A JP 59210436A JP 21043684 A JP21043684 A JP 21043684A JP H0239268 B2 JPH0239268 B2 JP H0239268B2
Authority
JP
Japan
Prior art keywords
mineral
skin
conductive
ions
types
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59210436A
Other languages
Japanese (ja)
Other versions
JPS6190676A (en
Inventor
Masahisa Muroki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HORITORONIKUSU KK
Original Assignee
HORITORONIKUSU KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Priority to JP59210436A priority Critical patent/JPS6190676A/en
Publication of JPS6190676A publication Critical patent/JPS6190676A/en
Publication of JPH0239268B2 publication Critical patent/JPH0239268B2/ja
Granted legal-status Critical Current

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  • Magnetic Treatment Devices (AREA)

Description

【発明の詳細な説明】 本発明は鉱物イオンと磁力線の相互作用によつ
て肩コリ、腰痛等の疾患に対して有効な消炎作用
を示す皮接具に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a skin fitting that exhibits an effective anti-inflammatory effect on diseases such as shoulder stiffness and lower back pain through the interaction of mineral ions and magnetic lines of force.

人体等生体は正常な生理的状態にある時所定濃
度比の細胞構成元素を含有している。たとえば、
動物細胞膜の内外ではナトリウム、カリウムイオ
ン濃度比〔Na+〕/〔K+〕がそれぞれ異なる一
定値に保たれており、細胞のナトリウムイオン濃
度が高まると血圧が上昇し、逆に細胞内のカリウ
ムイオン濃度が高まると血圧が下降するという性
質がある。これら生体必須元素の濃度調節は生体
の諸器管が有機的に作動して行なわれているが、
何らかの原因で器管に機能障害が発生した場合、
他器管との連けいが阻害されてイオン濃度比に異
常をきたす。換言すれば生体の活動を維持してい
くためのエネルギー消費過程に異常を生じ(代謝
異常)、生体の本来的機能が発揮できなくなる。
このような器管の機能障害が外傷などの物理的破
損に由来している場合には、外科的修復が必要で
あるが、細菌の侵入など外的要因やガン性腫瘍な
ど内的要因に由来する「病気」の場合には抗炎症
剤の投与に並行して生体の自己免疫性を高めてや
ることが治瘉上きわめて重要である。生体の自己
防衛機能が作動して異常を自己修復することがで
きれば、理想的な治療方法といえる。最近この自
己免疫性をつかさどる物質として動物の場合、イ
ンターフエロンやインターロイキンが注目される
ようになつてきた。遺伝子組替えの技術を利用し
てこれら物質を大量に合成し、投与する実験が行
なわれている。しかし、合成インターフエロンは
人体に投与した場合適合性などの問題があつて当
初期待されたような効果が充分発揮できないとも
報告されている。そこで生体内でインターフエロ
ンを誘起するインターフエロンインデユーサーが
自己免疫性疾患との関係でにわかに脚光をあびて
きた。いくつかのインターフエロンインデユーサ
ーのうち、単純で効果的なものにゲルマニウムや
シリコンなどの半導体が知られている。通常これ
ら元素は有機化して生体に投与され細胞組織内に
吸収されて効果を発揮している。しかし、本発明
者らは一種の生体電池現象を応用してイオン化せ
しめた鉱物性元素が陽イオンとして速やかに皮膚
面から生体細胞内に浸透して効果を発揮すること
を見出し先に出願した。
Living organisms such as the human body contain cell constituent elements at predetermined concentration ratios when in a normal physiological state. for example,
The sodium and potassium ion concentration ratios [Na + ]/[K + ] are maintained at different constant values inside and outside the animal cell membrane, and as the sodium ion concentration in the cell increases, blood pressure increases, and conversely, the intracellular potassium ion concentration increases. It has the property that as the ion concentration increases, blood pressure decreases. The concentration of these essential living elements is regulated by the organic functioning of the organs of the living body.
If organ dysfunction occurs for some reason,
Connection with other organs is inhibited, resulting in an abnormal ion concentration ratio. In other words, an abnormality occurs in the energy consumption process for maintaining the activities of the living body (metabolic abnormality), making it impossible for the living body to perform its original functions.
Surgical repair is required when organ dysfunction is caused by physical damage such as trauma, but it can also be caused by external factors such as bacterial invasion or internal factors such as cancerous tumors. In the case of such "diseases", it is extremely important to increase the autoimmunity of the body in parallel with the administration of anti-inflammatory drugs. If the body's self-defense function is activated and the abnormality can be repaired by itself, this would be an ideal treatment method. Recently, interferon and interleukin have been attracting attention in animals as substances that control autoimmunity. Experiments are being conducted to synthesize and administer large quantities of these substances using genetic recombination technology. However, it has been reported that when synthetic interferon is administered to the human body, there are problems such as compatibility and that it is not as effective as originally expected. Therefore, interferon inducers, which induce interferon in vivo, have suddenly attracted attention in relation to autoimmune diseases. Among several interferon inducers, semiconductors such as germanium and silicon are known to be simple and effective. Normally, these elements are organicized and administered to living organisms, where they are absorbed into cellular tissues and exert their effects. However, the present inventors have applied a kind of biological battery phenomenon to the discovery that ionized mineral elements can quickly penetrate into living cells from the skin surface as cations and exert their effects, and have filed an application.

本発明はこれら生体内に放出された鉱物イオン
を一層速やかにかつ強制的にドリフトさせること
によつて生体に対する治瘉効果を一層高めること
を目的としている。
The purpose of the present invention is to further enhance the therapeutic effect on living organisms by causing these mineral ions released into living bodies to drift more quickly and forcibly.

上記目的を達成するために本発明では標準単極
電位を異にする2種類の導電性鉱物を電気的に接
合して成る浸透素子と、該素子から発生遊離した
被浸透イオンの運動方向が影響を受ける強度の磁
場を付与しうる永久磁石と、前記素子に貼着した
皮接手段とから成る装置において、上記導電性鉱
物のうち標準単極電位のより低い鉱物が単結晶ま
たは粒径100μm以上の多結晶から成る半導体で
ある皮接具を開示する。該半導体が単結晶または
粒径サイズ100μm程度以上の多結晶であるのは、
結晶の界面間隔が半導体中の多数キヤリア拡張長
より充分長いことが効率的イオン発生にとつて必
要なためである。
In order to achieve the above object, the present invention uses a permeation element which is formed by electrically joining two types of conductive minerals with different standard monopolar potentials, and the direction of movement of the permeated ions generated and released from the element is influenced. In a device consisting of a permanent magnet capable of applying a strong magnetic field and a skin contact means attached to the element, the mineral having a lower standard unipolar potential among the above-mentioned conductive minerals is a single crystal or has a particle size of 100 μm or more. Disclosed is a skin joint which is a semiconductor made of polycrystalline material. If the semiconductor is a single crystal or a polycrystal with a grain size of about 100 μm or more,
This is because it is necessary for efficient ion generation that the interfacial distance between the crystals be sufficiently longer than the extension length of the majority carriers in the semiconductor.

本発明者による先願「鉱物イオン浸透器」にお
いては、標準単極電位のより高い金属と標準単極
電位のより低い半導体結晶とを電気的に接合し、
該金属および半導体結晶を粘着テープなどの皮接
手段により同時に生体皮膚面に貼着する。この結
果、2種類の導電性鉱物電極と生体間に電池作用
が惹起し、金属陽極の正電位効果によつて金属−
半導体結晶の界面にあるシヨツトキー障壁が偏倚
されて半導体結晶により金属側に自由電子が流入
する。電荷中立の条件を満たすように、半導体結
晶の生体皮膚面との界面では半導体イオンの遊離
生体内への浸透が生ずる。このような金属と半導
体の接合を利用した「鉱物イオン浸透器」では、
半導体結晶と生体皮膚面の界面に形成されたシヨ
ツトキー障壁により生体皮膚面から半導体結晶へ
の電子の注入が妨げられるため、異種金属どうし
から成る接合の場合とは違つてループ状の電子電
流回路はできず、かわりに半導体結晶の電離によ
つて金属側へ流出した自由電子は補給される。し
たがつて、異種金属どうしから成る接合が電流源
として好適であるのに比べ、金属と半導体の接合
は電離によるイオンが得やすくイオン源として好
適であるという特長をもつ。
In the previous application "Mineral Ion Penetrator" by the present inventor, a metal with a higher standard unipolar potential and a semiconductor crystal with a lower standard unipolar potential are electrically joined,
The metal and semiconductor crystal are simultaneously attached to the skin surface of the living body using a skin contacting means such as an adhesive tape. As a result, a battery action is induced between the two types of conductive mineral electrodes and the living body, and the positive potential effect of the metal anode causes the metal-
The Schottky barrier at the interface of the semiconductor crystal is biased, and free electrons flow into the metal side through the semiconductor crystal. In order to satisfy the condition of charge neutrality, free semiconductor ions penetrate into the living body at the interface between the semiconductor crystal and the skin of the living body. In the "mineral ion permeator" that utilizes this kind of metal-semiconductor bonding,
The Schottky barrier formed at the interface between the semiconductor crystal and the biological skin surface prevents the injection of electrons from the biological skin surface into the semiconductor crystal, so unlike the case of bonding between dissimilar metals, a loop-shaped electronic current circuit is Instead, the free electrons that flow out to the metal side due to ionization of the semiconductor crystal are replenished. Therefore, while a junction made of dissimilar metals is suitable as a current source, a junction of a metal and a semiconductor has the advantage that it is easy to obtain ions by ionization and is suitable as an ion source.

本発明はかかる鉱物イオン浸透器に対する改良
としての立場をとる。先願では、半導体イオン
は、生体や2つの導電性鉱物そのものの性質等に
より、自然な形でイオン交換を行う。
The present invention stands as an improvement to such mineral ion permeators. In the prior application, semiconductor ions perform ion exchange in a natural manner due to the properties of living organisms and the two conductive minerals themselves.

本発明は、イオンをより広範な生体内領域との
間で交換可能な如くせしめた。このために、外部
から強制的な力をイオンに加えるようにした。外
部から強制的に加える力は、磁界によつて与え
る。即ち、イオンを磁界中で運動させると、フレ
ミングの左手の法則により上記イオンは所定の方
向に力を受ける。これによつて、イオンは広い領
域へ拡散を受ける。本発明は上述したように金属
と半導体の接合を利用して陰極から発生した半導
体イオンの体内浸透を効果的に行なわしめるため
のものである。したがつて、たとえば特開昭55−
58170号で開示されているような単なる半導体と
磁石との組合せや、特開昭58−188465号で開示さ
れているような金属と磁石との組合せによる治療
具は、電子流に対する磁力線の影響はあつてもイ
オン浸透による薬効が伴なわない以上、本発明と
は全く無関係である。
The present invention allows ions to be exchanged with a wider range of living organisms. For this purpose, a forced force was applied to the ions from the outside. Force applied from the outside is applied by a magnetic field. That is, when ions are moved in a magnetic field, the ions receive a force in a predetermined direction due to Fleming's left-hand rule. This causes the ions to diffuse into a wide area. As described above, the present invention utilizes the metal-semiconductor junction to effectively allow semiconductor ions generated from the cathode to penetrate into the body. Therefore, for example, Japanese Patent Application Laid-open No. 1983-
Treatment devices that are simply a combination of a semiconductor and a magnet as disclosed in No. 58170, or a combination of a metal and a magnet as disclosed in Japanese Patent Application Laid-Open No. 188465/1988, have no effect on the electron flow due to magnetic lines of force. Even if it is, it is completely unrelated to the present invention as long as it does not have any medicinal effects due to iontophoresis.

本発明を更に詳細に説明する。 The present invention will be explained in more detail.

本発明は磁界中を運動する荷電粒子に対する周
知の相互作用を利用したものであり、その原理は
第1図に示す如くである。すなわち、たとえば人
体の皮膚内で紙面の前面から後面へ垂直方向に磁
束密度Bの静磁界を印加したとすれば、速度vで
皮膚表面より深奥部に向つて浸透している陽イオ
ン(点電荷q)は図の方向に力Fを受け半径rの
円軌道を描く。その半径rは陽イオンの質量をm
とすれば r=mv/qB ……(1) の如く表わされ、通常数〜十数μm程度である。
実際には磁界と直交しない速度成分があるため、
陽イオンは皮膚深奥部の組織へらせん運動をしな
がら拡散していく。このような磁界による半導体
陽イオンの強制運動によつてその運動経路にある
組織は、陽イオン直径の103−105倍の幅をもつ領
域が刺戟を受ける。これは単に物理的衝突によつ
て発生する治瘉効果(神経刺戟効果、発熱効果)
のみならず、薬理効果のある陽イオンの浸透によ
つて広範囲の組織で生理的効果(たとえばインタ
ーフエロン誘発効果)が発揮されることを意味す
る。
The present invention utilizes the well-known interaction of charged particles moving in a magnetic field, and its principle is as shown in FIG. In other words, for example, if a static magnetic field with a magnetic flux density B is applied vertically from the front to the back of the paper within the human skin, cations (point charges) penetrating deeper from the skin surface at a velocity v. q) receives force F in the direction shown in the figure and draws a circular orbit with radius r. Its radius r is the mass of the cation m
Then, it is expressed as r=mv/qB (1), and is usually about several to tens of micrometers.
In reality, there is a velocity component that is not perpendicular to the magnetic field, so
Cations diffuse into the tissues deep within the skin in a spiral motion. Due to the forced movement of semiconductor cations by such a magnetic field, tissues in the movement path are stimulated in a region having a width of 10 3 -10 5 times the cation diameter. This is simply a therapeutic effect (nervous stimulation effect, fever effect) caused by physical collision.
It also means that physiological effects (for example, interferon-inducing effects) are exerted in a wide range of tissues due to the penetration of pharmacologically effective cations.

更に本発明の皮接具では、陰極側から陽イオン
が放出されると同時に陽極下の生体内では体内に
含有されている鉄や銅イオンの還元反応が生じ、
一定時間経過後は陽極下生体内に還元イオンが蓄
積されるといういわゆる分極効果が起きる懸念
は、上記磁場による強制拡散効果によつて払しよ
くされるという利点がある。
Furthermore, in the skin fitting of the present invention, cations are released from the cathode side, and at the same time, a reduction reaction of iron and copper ions contained in the body occurs in the body under the anode.
There is an advantage in that the fear that reduced ions will accumulate in the body under the anode after a certain period of time, that is, the so-called polarization effect, will be eliminated by the forced diffusion effect of the magnetic field.

また、コリや筋肉痛の如き局部的な単純代謝不
全に対しても血流の結滞した毛細血管に磁力線が
作用するため、血管中のイオンが強制運動を強い
られ、血行が促進されて血管内に浸透した鉱物陽
イオンが速やかに患部に運ばれ代謝を促進して早
急に治瘉効果が発揮されるという利点がある。
In addition, in the case of local simple metabolic disorders such as stiffness or muscle pain, magnetic lines of force act on capillaries with stagnation of blood flow, forcing ions in the blood vessels to move, promoting blood circulation and vascular blood vessels. It has the advantage that the mineral cations that have penetrated into the body are quickly transported to the affected area, promoting metabolism and quickly producing a curative effect.

以下、本発明を実施例に基づいて詳しく述べ
る。
Hereinafter, the present invention will be described in detail based on examples.

実施例 1 第2図に示したように、皮接具は1個のリング
状永久磁石3と、該永久磁石3のリング内部に内
接する金属ゲルマニウム(Ge)多結晶1、上記
永久磁石3のN極面上に設けたPtメツキ層2、
及び接着用絆創膏4とより成る。金属Ge多結晶
1は接触皮膚面方向に対して突出せる構造をな
す。金属Ge多結晶1とPtメツキ層2が異なる標
準単極電位を持つ鉱物をなす。金属Ge単結晶1
の標準単極電位は、Pt層2の標準単極電位より
も小さい。なお、ここでいう金属Geとは、Geの
化合物ではなく元素単体でいわゆるメタリツク
(metallic)な光沢をもつGeであるという金相学
的にみた通称であつて、電子工学的見地からはこ
れが半導体であることは周知の事実である。金属
Ge多結晶1とPt層2とは電気的に接続(接合)
させている。例えば、永久磁石3は一種の導電体
であり、この永久磁石3を導路として利用する。
このためにGe多結晶1と永久磁石3とは、所定
の個所で短絡させた。この短絡個所は、S極面と
金属Se多結晶1の表面でもよく、又は永久磁石
3のリング内接面であつてもよい。
Embodiment 1 As shown in FIG. 2, the skin fitting includes one ring-shaped permanent magnet 3, a metal germanium (Ge) polycrystal 1 inscribed inside the ring of the permanent magnet 3, and the permanent magnet 3. Pt plating layer 2 provided on the N-pole surface,
and an adhesive bandage 4. The metal Ge polycrystal 1 has a structure that protrudes in the direction of the contact skin surface. The metal Ge polycrystal 1 and the Pt plating layer 2 form minerals with different standard unipolar potentials. Metal Ge single crystal 1
The standard unipolar potential of is smaller than the standard unipolar potential of the Pt layer 2. Note that the metal Ge referred to here is a common name from a metallurgical perspective, meaning that it is not a Ge compound but a single element with a so-called metallic luster, and from an electronics perspective, it is a semiconductor. This is a well-known fact. metal
Ge polycrystalline 1 and Pt layer 2 are electrically connected (junction)
I'm letting you do it. For example, the permanent magnet 3 is a type of conductor, and is used as a guide path.
For this purpose, the Ge polycrystal 1 and the permanent magnet 3 were short-circuited at a predetermined location. This short-circuit point may be the S pole surface and the surface of the metal Se polycrystal 1, or may be the ring inscribed surface of the permanent magnet 3.

かかる構成で、金属Ge多結晶1とPt層2とは
標準単極電位を異にしているため、皮膚面5内と
の間でイオン交換作用を行う。然るに、このイオ
ンに対して、永久磁石3の作る磁束が働き、図に
示す如く方向に力Fが加わり、イオンは広範囲に
拡散する。
With this configuration, since the metal Ge polycrystal 1 and the Pt layer 2 have different standard monopolar potentials, an ion exchange effect is performed between them and the inside of the skin surface 5. However, the magnetic flux produced by the permanent magnet 3 acts on these ions, and a force F is applied in the direction shown in the figure, causing the ions to diffuse over a wide range.

かかる皮接具を実際に、肩コリおよび腰痛を訴
える患者の患部皮膚面5に圧触貼布し、治療効果
を調べた。Ge多結晶1は純度4N、平均粒径サイ
ズ500μmの多結晶ペレツトであり、直径6mm、
高さ1.5mm、またこれに外接するリング磁石3は
内径6mm、外径9mm、高さ1.5mmで残留磁束密度
は800ガウスのフエライト製である。このN極面
上には厚み約10μmのPt2がメツキされている。
また磁石3とGe多結晶1とは絆創膏4接着面で
銀ペーストにより短絡されている。この皮接具を
肩コリを訴える年令32〜74才の男女50人および腰
痛を訴える年令40〜81才の男女50人の被験者患部
に適用し、48時間後症例観察を行なつた。この結
果性別、年令とは無関係に肩コリ患者の88%がほ
ぼ全治または著しく痛みが軽減し、腰痛患者の76
%が著しく症状改善を認めた。一方、比較のため
に別の肩コリ患者60名を2つのグループに分け、
一組には第2図のGe多結晶1と絆創膏4の組合
せのみを患部に貼布し、また別の一組には残留磁
束密度800ガウスの磁気治療器のみを患部に貼布
して、それぞれ48時間後の治瘉結果を観察した。
この結果Ge1のみを適用したグループでは著し
い痛み改善が20%、全く改善がみられなかつたも
の53%であつた。さらに磁気治療器のみを適用し
たグループでは著しい痛み改善が33%、全く改善
がみられなかつたもの30%であつた。これらの臨
床データは、本発明の鉱物イオン磁気治療器のす
ぐれた特性を裏付けている。これは生体電池作用
(Pt陽極下皮膚内ではFe3+→Fe2+の還元を生じGe
陰極からはGe2+イオンが皮膚内に放出される機
構)に基ずいて皮膚内に浸透したGeイオンが、
第1図で説明したように磁界による強制運動(第
2図に示したような方向に力Fが作用する)を受
けて生じて効果であると推定される。
This skin contact tool was actually applied to the affected skin surface 5 of a patient complaining of shoulder stiffness and lower back pain, and the therapeutic effect was investigated. Ge polycrystalline 1 is a polycrystalline pellet with a purity of 4N and an average grain size of 500μm, with a diameter of 6mm.
The height is 1.5 mm, and the ring magnet 3 circumscribing this is made of ferrite with an inner diameter of 6 mm, an outer diameter of 9 mm, a height of 1.5 mm, and a residual magnetic flux density of 800 Gauss. This N-pole surface is plated with Pt2 with a thickness of approximately 10 μm.
Further, the magnet 3 and the Ge polycrystal 1 are short-circuited by silver paste on the adhesive surface of the bandage 4. This skin joint was applied to the affected areas of 50 men and women aged 32 to 74 years who complained of stiff shoulders and 50 men and women aged 40 to 81 years of age who complained of lower back pain, and the cases were observed 48 hours later. As a result, 88% of patients with shoulder stiffness were almost completely cured or their pain was significantly reduced, regardless of gender or age, and 76% of patients with low back pain were completely cured or their pain was significantly reduced.
% of patients observed significant improvement in symptoms. On the other hand, for comparison, 60 patients with stiff shoulders were divided into two groups.
In one set, only the combination of Ge polycrystal 1 and bandage 4 shown in Fig. 2 was applied to the affected area, and in the other set, only the magnetic therapy device with a residual magnetic flux density of 800 Gauss was applied to the affected area. The cure results were observed after 48 hours, respectively.
As a result, in the group to which only Ge1 was applied, 20% showed significant improvement in pain, while 53% showed no improvement at all. Furthermore, in the group where only the magnetic therapy device was applied, 33% showed significant pain improvement, and 30% showed no improvement at all. These clinical data support the excellent properties of the mineral ion magnetic therapy device of the present invention. This is due to the biological battery action (in the skin under the Pt anode, Fe 3+ → Fe 2+ is reduced and Ge
Ge 2+ ions are released into the skin from the cathode), and the Ge ions that have penetrated into the skin
As explained with reference to FIG. 1, this effect is presumed to be caused by forced movement by a magnetic field (force F acting in the direction shown in FIG. 2).

実施例 2 第3図に示したように、直径3mm、長さ3mmの
円筒状棒磁石3(残留磁束密度1200ガウス)に外
接して、その外側に厚さ約10μmの銀2をメツキ
したCu2Se単結晶1のリング(内径3mm、外径7
mm、高さ3mm)を配した。Cu2Seはn型半導体で
あり、棒磁石3とCu2Su単結晶1は接触面で低温
ハンダ付けされ電気的に短絡している。前記棒磁
石3のS極面側に図示したように絆創膏4を貼付
した皮接具を慢性関節炎の患者に適用して効果を
調べた。
Example 2 As shown in Fig. 3, a Cu magnet was circumscribed around a cylindrical bar magnet 3 (residual magnetic flux density 1200 Gauss) with a diameter of 3 mm and a length of 3 mm, and the outside was plated with silver 2 with a thickness of about 10 μm. 2 Ring of Se single crystal 1 (inner diameter 3 mm, outer diameter 7
mm, height 3 mm). Cu 2 Se is an n-type semiconductor, and the bar magnet 3 and the Cu 2 S u single crystal 1 are electrically short-circuited by low-temperature soldering at their contact surfaces. A skin fitting with a bandage 4 pasted on the S-pole side of the bar magnet 3 as shown in the figure was applied to a patient with chronic arthritis to examine its effectiveness.

両足または片足ヒザ関節に炎症を起し、強い腫
れ、痛みを訴える女性患者5名の患部に、上記皮
接具を圧着貼付し、24時間毎に貼付位置を少しず
つ更新して5日間経過後の状態を調べると、4名
の患者は腫れ、痛みが大幅に軽減し、著しく治瘉
効果がみられた。また残り1名の患者にも痛みの
改善がみられた。これら患者は発病後数日〜数週
間を経過しているので上記治瘉効果は明らかに本
発明の皮接具に原因すると考えられる。その薬効
はCu2Se−Agイオン浸透器から皮膚内に放出さ
れたCu2Seイオン(体内ではさらにCuイオンと
Seイオンに分離すると考えれる)が、棒磁石3
の作る磁界に影響されてらせん運動を行ない、患
者の自己免疫性を高揚した結果生じたものと考え
られる。
The above skin adhesive was applied to the affected areas of 5 female patients who had inflammation in the knee joints of both legs or one leg and complained of severe swelling and pain, and after 5 days, the application position was updated little by little every 24 hours. When examining the condition of the patients, swelling and pain were significantly reduced in 4 patients, and a remarkable curing effect was observed. Improvement in pain was also observed in the remaining patient. Since several days to several weeks have passed since the onset of the disease in these patients, the above-mentioned curing effect is clearly considered to be caused by the skin fitting of the present invention. The medicinal effect is due to the Cu 2 Se ions released into the skin from the Cu 2 Se-Ag ion permeator (further converted into Cu ions in the body).
) is thought to be separated into Se ions, but the bar magnet 3
This is thought to have occurred as a result of the spiral movement being influenced by the magnetic field created by the patient, which heightened the patient's autoimmunity.

実施例 3 絆創膏4の粘着面に約5mm角の粒界サイズ約1
mmのn型半導体SiC多結晶1と約2mmの間隔をお
いて2×5mmのAu板2を並置して固定し、両導
電性鉱物1,2にそれぞれリード線7を接続して
接合し、絆創膏4の被粘着面上に配置した超電力
3Vの水銀電池6にSiC1がプラス、Au2がマイナ
スになるようにして接続した。更に導電性鉱物
1,2の並置線と直交する向きにSiC1を跨ぐよ
うにして「U」の字形をしたU字形磁石3を配置
した。該磁石3のN極とS極の空隙距離は1cm
で、したがつて第4図に示したように磁石3と
SiC1と直接接触していない。この磁石3の残留
磁束密度は1500ガウスである。第4図の構造をも
つ皮接具を、神経性胃炎の患者に適用して効果を
調べた。すなわちこの皮接具を指圧によつて痛み
を訴える患部皮膚面5に圧接貼布し、導電性鉱物
1,2および磁石3のN,S極が同時に皮膚面に
接触するように留意した。32〜45才の男女5名の
患者に適用すると、前記水銀電池6に偏倚されて
いるため、水銀電池6陽極−SiC1−人体−Au2−
水銀電池6陰極の閉回路に、0.1〜2mAの直流
が流れていることが確かめられた。約24時間後に
症状を調べると全ての患者から痛みの軽減が報告
された。特にそのうち2名の患者からは全く胃炎
の症状が消えていることがわかつた。これは前記
水銀電池6に偏倚されてSiCイオンが皮膚内へ侵
入し、磁場内でらせん運動をしながら内奥部へ浸
透して薬効をあげた結果と推定される。
Example 3 Grain boundary size of approximately 5 mm square on the adhesive surface of bandage 4
mm n-type semiconductor SiC polycrystalline 1 and a 2 x 5 mm Au plate 2 are juxtaposed and fixed at an interval of about 2 mm, and lead wires 7 are connected to both conductive minerals 1 and 2 respectively to join them. Super power placed on the adhesive surface of Bandage 4
I connected it to a 3V mercury battery 6 so that SiC1 was positive and Au2 was negative. Further, a "U"-shaped magnet 3 was placed so as to straddle the SiC 1 in a direction perpendicular to the line of juxtaposition of the conductive minerals 1 and 2. The gap distance between the N and S poles of the magnet 3 is 1 cm.
Therefore, as shown in Figure 4, magnet 3 and
Not in direct contact with SiC1. The residual magnetic flux density of this magnet 3 is 1500 Gauss. A skin fitting having the structure shown in Fig. 4 was applied to a patient suffering from neurogenic gastritis to examine its effectiveness. That is, this skin contact tool was applied to the skin surface 5 of the affected area complaining of pain using finger pressure, and care was taken so that the N and S poles of the conductive minerals 1 and 2 and the magnet 3 came into contact with the skin surface at the same time. When applied to five male and female patients between the ages of 32 and 45, the mercury battery 6 anode -SiC1-human body-Au2-
It was confirmed that a direct current of 0.1 to 2 mA was flowing in the closed circuit of the six cathodes of the mercury battery. When checked for symptoms approximately 24 hours later, all patients reported pain relief. In particular, it was found that the symptoms of gastritis had completely disappeared from two of the patients. This is presumed to be the result of the SiC ions being biased by the mercury battery 6 and penetrating into the skin, penetrating deep into the skin while making a spiral motion within the magnetic field, and increasing the medicinal effect.

以上実施例で詳細に述べたように、本発明の皮
接具は生体に好ましい影響を与える半導体陽イオ
ンの体外からの浸透を引続く磁力線との相互作用
によるイオンのらせん運動によつて人体等の患部
に対し有効な消炎作用を与えうることが確かめら
れた。
As described in detail in the embodiments above, the skin fitting of the present invention is capable of absorbing semiconductor cations from outside the body, which have a positive effect on living bodies, and the subsequent helical movement of ions due to interaction with magnetic lines of force. It was confirmed that it can have an effective anti-inflammatory effect on the affected areas.

なお上記実施例では、本発明の皮接具による消
炎作用を中心にのべたが、これ以外にも人体に必
要な元素、たとえばカルシウム、マグネシウム、
鉄、銅などの補給も本発明によつて体外から行な
いうることは自明である。
In the above embodiments, the anti-inflammatory effect of the skin fitting of the present invention was mainly discussed, but other elements necessary for the human body, such as calcium, magnesium,
It is obvious that supplementation of iron, copper, etc. can also be carried out from outside the body according to the present invention.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の原理を説明するための図、第
2〜第4図はそれぞれ別の実施例において用いら
れた皮接具の構造概略を示す。 図において、1…標準単極電位のより低い導電
性鉱物(半導体結晶)、2…より高い導電性鉱物
(金属)、3…永久磁石、4…皮接手段、5…皮膚
面、6…偏倚用直流電源、7…リード線。
FIG. 1 is a diagram for explaining the principle of the present invention, and FIGS. 2 to 4 each show a structural outline of a skin fitting used in different embodiments. In the figure, 1... conductive mineral with lower standard unipolar potential (semiconductor crystal), 2... higher conductive mineral (metal), 3... permanent magnet, 4... skin contact means, 5... skin surface, 6... bias DC power supply, 7...Lead wire.

Claims (1)

【特許請求の範囲】 1 標準単極電位を異にする2種類の導電性鉱物
を電気的に接合して成る鉱物イオン浸透素子と、
該素子から発生遊離した被浸透イオンの運動方向
が影響を受ける強度の磁場を付与しうる永久磁石
と、前記素子に貼着した皮接手段とから成る装置
において、上記導電性鉱物のうち標準単極電位の
より低い鉱物が単結晶または粒径100μm以上の
多結晶から成る半導体であることを特徴とする皮
接具。 2 特許請求の範囲第1項記載の鉱物イオン浸透
素子において、前記2種類の導電性鉱物が、元
素、合金、化合物より成る群から選んだ一種であ
る皮接具。 3 特許請求の範囲第1項記載の鉱物イオン浸透
素子において、2種類の導電性鉱物間に、標準単
極電位のより低い導電性鉱物が正に、標準単極電
位のより高い導電性鉱物が負に偏倚されるような
向きに直流電源を接続した皮接具。 4 特許請求の範囲第1項記載の永久磁石の磁気
回路の1部が前記鉱物イオン浸透素子を構成する
2種類の導電性鉱物のうち少なくとも1種によつ
て構成されるように、該鉱物イオン浸透素子と該
永久磁石を密着した構造の皮接具。
[Claims] 1. A mineral iontophoresis element formed by electrically bonding two types of conductive minerals with different standard unipolar potentials;
A device comprising a permanent magnet capable of applying a strong magnetic field that influences the direction of motion of penetrating ions generated and released from the element, and skin contact means affixed to the element. A leather fitting characterized in that the mineral with a lower polar potential is a semiconductor consisting of a single crystal or a polycrystal with a grain size of 100 μm or more. 2. The mineral iontophoretic device according to claim 1, wherein the two types of conductive minerals are one type selected from the group consisting of elements, alloys, and compounds. 3. In the mineral iontophoretic device according to claim 1, between the two types of conductive minerals, the conductive mineral with a lower standard unipolar potential is directly the conductive mineral with a higher standard unipolar potential. A skin contact that connects a DC power source in a direction that biases it negatively. 4. Mineral ions, such that a part of the magnetic circuit of the permanent magnet according to claim 1 is composed of at least one of the two types of conductive minerals constituting the mineral iontophoresis element. A skin fitting with a structure in which the permeation element and the permanent magnet are in close contact with each other.
JP59210436A 1984-10-09 1984-10-09 Skin contact maker Granted JPS6190676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59210436A JPS6190676A (en) 1984-10-09 1984-10-09 Skin contact maker

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59210436A JPS6190676A (en) 1984-10-09 1984-10-09 Skin contact maker

Publications (2)

Publication Number Publication Date
JPS6190676A JPS6190676A (en) 1986-05-08
JPH0239268B2 true JPH0239268B2 (en) 1990-09-04

Family

ID=16589291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59210436A Granted JPS6190676A (en) 1984-10-09 1984-10-09 Skin contact maker

Country Status (1)

Country Link
JP (1) JPS6190676A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2003577C (en) * 1988-12-01 2001-04-17 Abraham R. Liboff Method and apparatus for regulating transmembrane ion movement
JPH0330780A (en) * 1989-06-29 1991-02-08 Ryoichi Wako Health tool and preparation thereof
JP3566346B2 (en) * 1994-09-14 2004-09-15 株式会社ポリトロニクス Transdermal drug delivery device
FI127811B (en) * 2016-11-21 2019-03-15 Helsingin Yliopisto Device for sampling one or more analytes

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558170A (en) * 1978-10-25 1980-04-30 Tooru Hamada Treatment piece for skin contact
JPS5632947A (en) * 1979-08-24 1981-04-02 Nippon Reizo Kk Method and apparatus for producing coating like food with net like baking mesh
JPS58174138U (en) * 1982-11-12 1983-11-21 矢吹 哲朗 medical equipment

Also Published As

Publication number Publication date
JPS6190676A (en) 1986-05-08

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