JPH0240738B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Field of Application) The present invention relates to a sputtering apparatus, and particularly to a sputtering apparatus that makes the thickness of a sputtered film such as an oxide film or a nitrogen film more uniform.

(Prior art) The above sputtering apparatus creates a gas plasma in a reduced pressure gas atmosphere, hits the ionized gas against a target on a counter electrode to knock out atoms from the target material, and causes the atoms to react with the activated gas. This is then deposited on a sample such as a substrate.

Conventionally, as this type of device, the one shown in FIG. 3 has been generally known.

That is, a reflector 2 is housed inside the chamber 1 to prevent sputtering film from adhering to the components of the sputtering apparatus during sputtering, and a reflector 2 is housed at one place on the side of the chamber 1. was connected to gas inlet 3. Then, a sample 4 such as a substrate to be subjected to sputtering treatment is inserted into the lower part of the reflector 2, and gas is introduced into the reflector 2 from the gas inlet 3 to perform sputtering to form a sputtered film on this sample. .

(Problem to be Solved by the Invention) However, in the case of the above conventional example, the gas introduced into the reflector 2 was introduced at one place at the gas inlet 3, so the introduced gas was As shown, the gas flows from the inlet 3 gradually expanding in the flow direction, making it difficult to make the gas distribution uniform inside the reflector 2, and as a result, it is not possible to obtain a uniform sputtered film. However, the reflector and gas inlet hole had to be installed separately, which led to an increase in the number of parts.

In view of the above, it is an object of the present invention to provide a device that can improve the uniformity of the sputtered film thickness and reduce the number of parts by uniformly introducing gas from the periphery of the sample. Something is coming.

[Structure of the invention]

(Means for Solving the Problems) In order to achieve the above object, the present invention provides a sputtering apparatus in which a reflector that surrounds a sample is housed in a chamber, and a gas is introduced into the reflector. A gas introduction passage communicating with the gas inlet is formed between the upper part of the reflector and the chamber over the entire circumference, and a plurality of gas introduction holes are bored in the upper part of the reflector to communicate the gas introduction passage and the inside of the reflector. However, the inside of the chamber is evacuated via a vacuum pump from an outflow passage that is provided around the entire circumference of the sample placed below the reflector and ascends once and then descends.

(Function) The gas introduced into the gas introduction passage from the gas inlet is ejected into the reflector from the plurality of gas introduction holes that communicate with the gas introduction passage and the interior of the reflector, thereby uniformly distributing the gas inside the chamber. At the same time, the chamber is evacuated evenly from the sides around the sample via a vacuum pump to equalize the gas in the chamber and make the sputtered film more uniform. This configuration eliminates the need to separately provide a gas introduction hole, thereby reducing the number of parts.

(Example) FIGS. 1 and 2 show an example of the present invention,
A reflector 2 is housed inside the chamber 1 to prevent sputtering film from adhering to the components of the sputtering apparatus during sputtering, and a gas inlet 3 is provided at one location on the side of the chamber 1. is connected.

The circumferential edge of the upper part 2a of the reflector 2 is bent inward, and a gas introduction passage 5 is connected to the outer circumferential surface and the inner circumferential surface of the chamber 1 over the entire circumference, and is connected to the gas inlet 3. The upper portion 2a is further provided with a plurality of gas introduction holes 6, 6, .

As a result, the gas introduced into the gas introduction passage 5 from the gas inlet 3 is simultaneously ejected into the interior of the reflector 2 from the gas introduction holes 6, 6, etc., and the gas is more uniformly introduced into the interior of the reflector 2. It is configured so that it can be carried out.

A sample 4 such as a substrate to be sputtered is placed at the bottom of the reflector 2, the top of which is blocked with a target 7 such as Si, Al, Ta, etc., and the bottom end is connected to a vacuum pump 8. It is connected.

Then, the vacuum pump 8 is operated to remove the chamber 1.
In addition to reducing the pressure inside, a gas inlet 2,
Gas is introduced through the gas introduction passage 5 and the gas introduction hole 6 to create a gas plasma in a reduced pressure gas atmosphere, and the ionized gas is applied to the target 7 on the counter electrode to knock out atoms from the target material and activate the atoms. The reacted gas is deposited on a sample 4 such as a substrate, and a sputtered film is formed on the surface of the sample 4.

Note that the gas introduction hole described above can be applied not only to sputtering equipment but also, for example, to an etching gas introduction hole in an etching equipment.

〔Effect of the invention〕

Since the present invention has the above-described configuration, gas is uniformly supplied into the reflector by simultaneously injecting gas into the reflector from a plurality of gas inlets, and at the same time, gas is injected into the reflector from the side around the sample via a vacuum pump. The inside of the chamber can be evacuated evenly, thereby making the gas distribution inside the chamber more uniform and making the spatter film more uniform, while also preventing the spatter particles from coming out. be able to.

In addition, the reflector and gas introduction hole are integrated,
This has the effect of being able to reduce the number of parts.

[Brief explanation of drawings]

1 and 2 show an embodiment of the present invention,
Figure 1 is a cross-sectional plan view (cross-sectional view taken along the - line in Figure 2);
FIG. 2 is a longitudinal sectional front view, and FIG. 3 is a plan view of a conventional example with the target removed. 1...Chamber, 2...Reflector, 3...Gas inlet, 4...Sample, 5...Gas introduction passage, 6...
...Gas introduction hole.

Claims (1)

[Claims] 1 In a sputtering device in which a reflector that covers the periphery of a sample is housed in a chamber and gas is introduced into the reflector, a gas introduction passage communicating with a gas inlet is completely connected between the upper part of the reflector and the chamber. A plurality of gas introduction holes are formed around the circumference and are bored in the upper part of the reflector to communicate the gas introduction passage with the inside of the reflector,
A sputtering device characterized in that the inside of a chamber is evacuated via a vacuum pump from an outflow passage that is provided around the entire circumference of a sample placed below a reflector and that rises once and then falls.