JPH0241022B2 - - Google Patents
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- Publication number
- JPH0241022B2 JPH0241022B2 JP59274420A JP27442084A JPH0241022B2 JP H0241022 B2 JPH0241022 B2 JP H0241022B2 JP 59274420 A JP59274420 A JP 59274420A JP 27442084 A JP27442084 A JP 27442084A JP H0241022 B2 JPH0241022 B2 JP H0241022B2
- Authority
- JP
- Japan
- Prior art keywords
- selenium
- ppm
- oxygen
- added
- purity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08207—Selenium-based
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Description
【発明の詳細な説明】
発明の分野
本発明は、電子写真感光体用のセレン−テルル
系合金材料並びに該材料を真空蒸着して作製され
た蒸着感光層を具備する電子写真感光体に関する
ものであり、特には100ppmを超え1000ppm以下
の酸素を添加したことを特徴とする。酸素添加に
より、暗減衰特性を良好に保つたまま残留電位を
減少させることができる。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a selenium-tellurium alloy material for an electrophotographic photoreceptor, and an electrophotographic photoreceptor comprising a vapor-deposited photosensitive layer prepared by vacuum-depositing the material. In particular, it is characterized by the addition of more than 100 ppm and less than 1000 ppm of oxygen. By adding oxygen, the residual potential can be reduced while maintaining good dark decay characteristics.
発明の背景
電子写真法は物質の光導電性と静電気現象を利
用した写真法であり、幾つかの方式が確立されて
いるが、そのうちセレン或いはセレン合金蒸着膜
を電子写真感光体として使用し、転写によつて電
子写真を得る方式をゼロツクス法と呼んでいる。
ゼロツクス法は、周知の通り、下記の過程から成
つている:
(a) 帯電:金属基板上に暗抵抗の高い無定形セレ
ン或いはセレン合金を蒸着した感光体の表面を
帯電させる。Background of the Invention Electrophotography is a photographic method that utilizes the photoconductivity of substances and electrostatic phenomena, and several methods have been established. The method of obtaining electrophotography through transfer is called the Xerox method.
The Xerox method, as is well known, consists of the following steps: (a) Charging: The surface of a photoreceptor, in which amorphous selenium or selenium alloy with high dark resistance is deposited on a metal substrate, is charged.
(b) 露光(焼付):光像で露光すると光の照射を
受けた部分のセレン或いはセレン合金は電気抵
抗が下がり、表面の帯電電荷は金属基板へ逃
げ、感光板上の残存電荷密度は露光量に応じて
差を生じ、感光板面上に原画と同形の静電潜像
ができる。(b) Exposure (printing): When exposed to a light image, the electrical resistance of the selenium or selenium alloy in the irradiated area decreases, the surface charge escapes to the metal substrate, and the remaining charge density on the photosensitive plate decreases due to exposure. A difference occurs depending on the amount, and an electrostatic latent image with the same shape as the original image is formed on the surface of the photosensitive plate.
(c) 現像:上記感光板表面に炭素微粉を樹脂で被
覆したトナーとガラス小球からなるキヤリヤの
混合粉をふりかけることによつて潜像部にトナ
ーが付着し、潜像は可視像となる。(c) Development: By sprinkling the surface of the photosensitive plate with a mixed powder of toner consisting of fine carbon powder coated with resin and carrier consisting of glass beads, the toner adheres to the latent image area, and the latent image becomes a visible image. Become.
(d) 転写:現像を終えた上記感光板表面に適当な
紙を載せ、背面からコロナ放電を行なわせる
と、感光板上のトナーは紙に吸引され、トナー
粉像は紙に転写される。(d) Transfer: When a suitable paper is placed on the surface of the photosensitive plate after development and a corona discharge is applied from the back side, the toner on the photosensitive plate is attracted to the paper and the toner powder image is transferred to the paper.
(e) 定着:転写を終えたら紙をはがし、赤外線ヒ
ータで加熱してトナーの樹脂を紙に溶着させ
る。(e) Fixing: Once the transfer is complete, remove the paper and heat it with an infrared heater to fuse the toner resin to the paper.
以上の過程を実施することにより原画の複写画
像(電子写真)が得られるが、複写された像の鮮
明さ、再現性等の特性は感光体セレン或いはセレ
ン合金の性能に大きく依存する。幾つかのセレン
合金が考慮されているが、長波長感度を持たせる
こと及び硬度を上げて耐刷枚数を増加させること
等の目的のためセレン−テルル合金が広く用いら
れている。 By carrying out the above process, a copied image (electrophotography) of the original image can be obtained, but the characteristics such as sharpness and reproducibility of the copied image largely depend on the performance of the photoreceptor selenium or selenium alloy. Although several selenium alloys have been considered, selenium-tellurium alloys are widely used for the purpose of providing long-wavelength sensitivity and increasing the number of printing sheets by increasing hardness.
感光体の性能の判定には、(イ)一定出力のコロナ
放電により与えられる帯電電荷量を表すコロナ帯
電特性、(ロ)コロナ放電により帯電された感光体を
保持する間に失われる荷電量と関係する暗減衰特
性、(ハ)暗中で保持された荷電量が露光によつて消
失する速度を表す帯電圧露光減衰特性、(ニ)感光体
を露光させた後零まで消失せずに残る電位を表す
残留電位等が考慮される。 To judge the performance of a photoreceptor, (a) corona charging characteristics that represent the amount of charge given by corona discharge at a constant output, and (b) the amount of charge lost while holding the photoreceptor charged by corona discharge. Related dark decay characteristics, (c) charge voltage exposure decay characteristics that indicate the speed at which the amount of charge held in the dark disappears due to exposure, and (d) potential that remains without disappearing to zero after exposing the photoreceptor to light. Residual potential, etc. representing , are considered.
電子写真のコントラストや画質並びにセレン感
光体の特性の安定化にとつて重要な役割を果すの
は特に残留電位である。ところが、セレンとテル
ルを合金化しただけでは、残留電位が大きく、地
汚れなど画像の質を悪くする。 Residual potential in particular plays an important role in stabilizing the contrast and image quality of electrophotography and the properties of selenium photoreceptors. However, if selenium and tellurium are simply alloyed, the residual potential will be large, resulting in poor image quality such as background smearing.
このため、従来は塩素の添加が行われていた。
しかし、塩素を添加すると、暗減衰特性が劣化す
る欠点があつた。また、塩素は通常四塩化セレン
の形で添加されるが、潮解性が強く、気化しやす
い等取扱い上の問題が多い。 For this reason, chlorine has conventionally been added.
However, when chlorine is added, the dark decay characteristics deteriorate. In addition, chlorine is usually added in the form of selenium tetrachloride, but it has a strong deliquescent property and is easily vaporized, causing many problems in handling.
発明の概要
本発明者は、従来使用されたよりもつと高純度
の、99.999%を超える純度を有するセレン−テル
ル合金の採用を検討し、その暗減衰特性を良好に
保つたまま残留電位を減少させることの出来る添
加材について研究を進めた結果、酸素の添加が有
効であることを見出した。100ppmを超え
1000ppm以下の酸素の添加によつて暗減衰特性を
良好に保つたまま残留電位を充分に減少させるこ
とが出来る。酸素添加は、塩素の場合のような取
り扱い上の障害を呈さない。Summary of the Invention The present inventor investigated the use of a selenium-tellurium alloy with a purity of over 99.999%, which is more pure than conventionally used alloys, and reduced the residual potential while maintaining good dark decay characteristics. As a result of conducting research on additives that can do this, it was discovered that the addition of oxygen is effective. More than 100ppm
By adding 1000 ppm or less of oxygen, the residual potential can be sufficiently reduced while maintaining good dark decay characteristics. Oxygenation does not present handling hazards as does chlorine.
斯くして、本発明は、
(1) 99.999%を超える純度を有するセレン−テル
ル合金に酸素を100ppmを超え1000ppm以下添
加したことを特徴とする電子写真感光材料、
(2) 99.999%を超える純度を有するセレン−テル
ル合金に酸素を100ppmを超え1000ppm以下添
加した電子写真感光材料を用いて導電性基板上
に形成した薄膜感光層を具備する電子写真感光
体、及び
(3) 積層型電子写真感光体において、99.999%を
超える純度を有するセレン−テルル合金に酸素
を100ppmを超え1000ppm以下添加した電子写
真感光材料を用いて導電性基板上に形成した薄
膜感光層を純セレンその他の感光層の上または
下に一層または複数層具備する電子写真感光体
を提供する。 Thus, the present invention provides: (1) an electrophotographic light-sensitive material characterized in that more than 100 ppm and less than 1000 ppm of oxygen is added to a selenium-tellurium alloy having a purity of more than 99.999%; (2) a purity of more than 99.999% an electrophotographic photoreceptor comprising a thin film photosensitive layer formed on a conductive substrate using an electrophotographic material in which oxygen is added to a selenium-tellurium alloy of 100 ppm to 1000 ppm; and (3) a laminated electrophotographic photoreceptor. In the body, a thin film photosensitive layer formed on a conductive substrate using an electrophotographic photosensitive material containing a selenium-tellurium alloy with a purity of more than 99.999% and oxygen added in an amount of more than 100 ppm and less than 1000 ppm is placed on top of a pure selenium or other photosensitive layer. Alternatively, an electrophotographic photoreceptor having one or more layers underneath is provided.
発明の具体的説明
本発明の感光材料における母体たるセレン−テ
ルル合金の作製において、従来から用いられてき
た4〜5N(99.99〜99.999%)の純度のセレン及び
テルルよりもつと高純度の、即ち99.999%を超え
る、代表的には6Nの高純度セレン及びテルルが
用いられる。不純物の多い原料を用いると、不純
物がトラツプを形成するため、酸素によるセレン
−テルル合金自体の構造欠陥の補償が十分に行わ
れなくなるものと考えられる。DETAILED DESCRIPTION OF THE INVENTION In preparing the selenium-tellurium alloy that is the base material in the photosensitive material of the present invention, the selenium-tellurium alloy has a higher purity than the conventionally used selenium and tellurium with a purity of 4 to 5N (99.99 to 99.999%). High purity selenium and tellurium of greater than 99.999%, typically 6N, is used. It is believed that if a raw material containing many impurities is used, the impurities will form traps, making it impossible for oxygen to sufficiently compensate for structural defects in the selenium-tellurium alloy itself.
本発明においては、100ppmを超え1000ppm以
下の酸素が添加される。100ppmを超える酸素の
添加によつて残留電位は充分に低い水準に低減さ
れそして暗減衰特性も良好に保たれる。1000ppm
を越えて酸素を添加しても効果は実質上変らな
い。また、酸素を1000ppmより多く添加すると蒸
着時に突沸が起りやすくなり、蒸着膜に欠陥が生
じるので、この点からも1000ppm以下が望まし
い。 In the present invention, more than 100 ppm and less than 1000 ppm of oxygen is added. By adding more than 100 ppm of oxygen, the residual potential is reduced to a sufficiently low level and the dark decay properties are also maintained well. 1000ppm
Even if oxygen is added in excess of this amount, the effect does not substantially change. Further, if more than 1000 ppm of oxygen is added, bumping is likely to occur during vapor deposition, causing defects in the deposited film, so from this point of view as well, it is desirable that the amount of oxygen be 1000 ppm or less.
酸素はSeO2の形で添加してもよいし或いは酸
素バブリングによつても添加されうる。酸素添加
の場合には、塩素添加の場合のような取扱い上の
支障が何ら生じない。 Oxygen may be added in the form of SeO 2 or by oxygen bubbling. In the case of oxygen addition, there are no problems in handling as in the case of chlorine addition.
こうして得られる電子写真感光材料すなわち蒸
着源としてのセレン−テルル−酸素合金材料をド
ラム導電性基板上に真空蒸着することによつて電
子写真用感光体が得られる。感光体としては、前
述の通り単層型及び積層型のものが実用化されて
いる。後者の場合、本発明感光材料は感光層の形
成に使用される。 An electrophotographic photoreceptor is obtained by vacuum-depositing the thus obtained electrophotographic photosensitive material, ie, a selenium-tellurium-oxygen alloy material as a vapor deposition source, onto a drum conductive substrate. As mentioned above, single-layer type and laminated type photoreceptors have been put into practical use. In the latter case, the photosensitive material of the present invention is used to form a photosensitive layer.
真空蒸着の条件は特に限定されるものでなく、
通常実施されている条件で十分である。蒸着源温
度250〜350℃、基板温度55〜75℃、真空度10-5〜
10-6Torr、蒸着時間60〜130分の範囲で適宜の条
件を選択して実施しうる。基板としては、アルミ
ニウム、鋼等の金属或いは金属化された紙或いは
プラスチツク等が用いられる。 The conditions for vacuum evaporation are not particularly limited;
The conditions normally practiced are sufficient. Evaporation source temperature 250 to 350℃, substrate temperature 55 to 75℃, degree of vacuum 10 -5 to
It can be carried out by selecting appropriate conditions within the range of 10 −6 Torr and evaporation time of 60 to 130 minutes. As the substrate, a metal such as aluminum or steel, metalized paper, or plastic is used.
セレン−テルル合金におけるテルル量は一般に
5〜30重量%とされる。5%より少ないと長波長
感度及び耐刷枚数の増加という所期の目的を実現
できず、他方30%を越えるとセレン感光特性が許
容以上に悪化する。 The amount of tellurium in the selenium-tellurium alloy is generally 5 to 30% by weight. If it is less than 5%, the desired objectives of increasing long-wavelength sensitivity and printing durability cannot be achieved, while if it exceeds 30%, the selenium photosensitive characteristics will deteriorate beyond tolerance.
複写機用感光体においては、機能分離型と呼ば
れる被層構造を採用した感光体も提唱されてい
る。例えば、2層構造の場合、光照射を直接受
け、紙面と接触する表面層には、長波長感度や耐
摩耗性に優れたSE−Te系材料を用いそして基板
側層には純セレンを用いる。本発明はこうした積
層型電子写真感光体の一層または複数層の感光層
として適用しうるものである。 Regarding photoconductors for copying machines, photoconductors employing a layered structure called a functionally separated type have also been proposed. For example, in the case of a two-layer structure, the surface layer that receives direct light irradiation and is in contact with the paper surface is made of SE-Te material, which has excellent long-wavelength sensitivity and wear resistance, and the substrate side layer is made of pure selenium. . The present invention can be applied as one or more photosensitive layers of such a laminated electrophotographic photoreceptor.
実施例
高純度セレン(純度6N)、テルル(同6N)及
び二酸化セレンを外径30mm×長さ220mmのパイレ
ツクスアンプル中に所定量真空封入し、これを
550℃で2時間揺動炉中で反応させた後、炉外に
取り出し空冷した。その後アンプルを粉砕して合
金を取り出した。なおテルル濃度は15wt%とし
酸素添加量を1から1000ppmまで変化させた。Example A predetermined amount of high-purity selenium (purity 6N), tellurium (purity 6N), and selenium dioxide were sealed in a Pyrex ampoule with an outer diameter of 30 mm and a length of 220 mm.
After reacting in a rocking furnace at 550°C for 2 hours, it was taken out of the furnace and cooled in air. The ampoule was then crushed to remove the alloy. The tellurium concentration was 15 wt%, and the amount of oxygen added was varied from 1 to 1000 ppm.
このようにして作製した合金を抵抗加熱により
55mm×55mmの鏡面仕上げアルミニウム基板上に真
空蒸着した。蒸着条件は次の通りである。 The alloy produced in this way is heated by resistance heating.
Vacuum deposition was performed on a 55 mm x 55 mm mirror-finished aluminum substrate. The deposition conditions are as follows.
蒸発源温度 300℃
基板温度 70℃
真 空 度 2×10-6Torr
蒸着時間 90分間
以上の条件によりアルミニウム基板上へ形成し
た蒸着膜の厚さは、いずれも約50μmであつた。Evaporation source temperature: 300°C Substrate temperature: 70°C Vacuum degree: 2×10 -6 Torr Vapor deposition time: 90 minutes The thickness of the deposited film formed on the aluminum substrate under the above conditions was approximately 50 μm.
こうして得られた合金蒸着膜について静電試験
装置を用いて電子写真特性を測定した。測定条件
は次の通りである。 The electrophotographic properties of the alloy vapor-deposited film thus obtained were measured using an electrostatic testing device. The measurement conditions are as follows.
コロナ放電電圧 5kV
暗減衰時間 10秒間
光照射時間 30秒間
光 照 度 10ルクス
除電照度、時間 20000lx、2秒間
繰返し数 30回
測定結果を合金中への酸素添加量の関係におい
て図面に示す。Corona discharge voltage 5kV Dark decay time 10 seconds Light irradiation time 30 seconds Light Illuminance 10 lux Static elimination illuminance, time 20000 lx, 2 seconds Repeat count 30 times The measurement results are shown in the drawing in relation to the amount of oxygen added to the alloy.
第1図において曲線は初期表面電位を示し、
曲線は帯電後10秒経過時の暗状態での表面電位
(V10)である。第2図は、残留電位と酸素添加
量との関係である。第2図からわかるように酸素
添加量100ppmを超え1000ppm以下の範囲で残留
電位は十分に低減されており、このときの暗減衰
特性も第1図に見られるように良好である。 In Figure 1, the curve shows the initial surface potential;
The curve shows the surface potential (V 10 ) in the dark state 10 seconds after charging. FIG. 2 shows the relationship between the residual potential and the amount of oxygen added. As can be seen from FIG. 2, the residual potential is sufficiently reduced in the range of oxygen addition of more than 100 ppm and less than 1000 ppm, and the dark decay characteristics at this time are also good as seen in FIG.
発明の効果
本発明により、暗減衰特性を良好に保つたまま
残留電位を減少させたセレン−テルル系電子写真
感光体が得られる。Effects of the Invention According to the present invention, a selenium-tellurium electrophotographic photoreceptor can be obtained which has a reduced residual potential while maintaining good dark decay characteristics.
第1図は酸素添加量と表面電位の関係を示すグ
ラフでありそして第2図は酸素添加量と残留電位
の関係を示すグラフである。
FIG. 1 is a graph showing the relationship between the amount of oxygen added and the surface potential, and FIG. 2 is a graph showing the relationship between the amount of oxygen added and the residual potential.
Claims (1)
ル合金に酸素を100ppmを超え1000ppm以下添加
したことを特徴とする電子写真感光材料。 2 99.999%を超える純度を有するセレン−テル
ル合金に酸素を100ppmを超え1000ppm以下添加
した電子写真感光材料を用いて導電性基板上に形
成した薄膜感光層を具備する電子写真感光体。 3 積層型電子写真感光体において、99.999%を
超える純度を有するセレン−テルル合金に酸素を
100ppmを超え1000ppm以下添加した電子写真感
光材料を用いて導電性基板上に形成した薄膜感光
層を純セレンその他の感光層の上または下に一層
または複数層具備する電子写真感光体。[Scope of Claims] 1. An electrophotographic light-sensitive material characterized in that more than 100 ppm and less than 1000 ppm of oxygen is added to a selenium-tellurium alloy having a purity of more than 99.999%. 2. An electrophotographic photoreceptor comprising a thin film photosensitive layer formed on a conductive substrate using an electrophotographic photosensitive material in which oxygen is added to a selenium-tellurium alloy having a purity of more than 99.999% and more than 100 ppm and less than 1000 ppm. 3 In a laminated electrophotographic photoreceptor, oxygen is added to a selenium-tellurium alloy with a purity of over 99.999%.
An electrophotographic photoreceptor comprising one or more thin film photosensitive layers formed on a conductive substrate using an electrophotographic photosensitive material containing more than 100 ppm and less than 1000 ppm on or below a pure selenium or other photosensitive layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27442084A JPS61156135A (en) | 1984-12-28 | 1984-12-28 | Electrophotographic sensitive body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27442084A JPS61156135A (en) | 1984-12-28 | 1984-12-28 | Electrophotographic sensitive body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61156135A JPS61156135A (en) | 1986-07-15 |
| JPH0241022B2 true JPH0241022B2 (en) | 1990-09-14 |
Family
ID=17541419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27442084A Granted JPS61156135A (en) | 1984-12-28 | 1984-12-28 | Electrophotographic sensitive body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61156135A (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59223436A (en) * | 1983-06-03 | 1984-12-15 | Fuji Xerox Co Ltd | Photosensitive body of selenium-tellurium alloy |
-
1984
- 1984-12-28 JP JP27442084A patent/JPS61156135A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61156135A (en) | 1986-07-15 |
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