JPH0241459U - - Google Patents

Info

Publication number
JPH0241459U
JPH0241459U JP11935288U JP11935288U JPH0241459U JP H0241459 U JPH0241459 U JP H0241459U JP 11935288 U JP11935288 U JP 11935288U JP 11935288 U JP11935288 U JP 11935288U JP H0241459 U JPH0241459 U JP H0241459U
Authority
JP
Japan
Prior art keywords
layer
diffusion
semiconductor light
small island
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11935288U
Other languages
English (en)
Other versions
JPH0741168Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988119352U priority Critical patent/JPH0741168Y2/ja
Publication of JPH0241459U publication Critical patent/JPH0241459U/ja
Application granted granted Critical
Publication of JPH0741168Y2 publication Critical patent/JPH0741168Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【図面の簡単な説明】
第１図は本考案の一実施例の構造を示す断面図
、第２図は第１図の実施例の各領域のパターンを
示す平面図、第３図は本考案の他の実施例の構造
を示す説明図、第４図は従来の半導体受光素子の
構造の一例を示す断面図である。 １…Ｐ型基板層、２…Ｎエピタキシヤル層、３
…Ｐアイソレーシヨン拡散層、４…Ｐ拡散層、５
…Ｎ＋拡散層、６…Ｐ埋込層、７…Ｎ＋埋込層、
８…Ｐ拡散層。なお図中同一符号は同一または相
当する部分を示す。

Claims (1)

    【実用新案登録請求の範囲】
  1. Ｐ型基板上にＮエピタキシヤル層を形成し、Ｐ
    アイソレーシヨン拡散層で分離したチツプからな
    る半導体受光素子において、Ｐ型基板層上に設け
    た複数個の小型の島状のＰ埋込層と、Ｎエピタキ
    シヤル層の金属配線のコンタクト層を除く領域に
    Ｐアイソレーシヨン拡散層の拡散で設けた上記Ｐ
    埋込層と接しない複数個の小型の島状の深いＰ拡
    散層と、上記Ｎエピタキシヤル層の金属配線のコ
    ンタクト層を除く領域に設けた上記複数個の小型
    の島状の深いＰ拡散層を接続する浅いＰ拡散層と
    を備えたことを特徴とする半導体受光素子。
JP1988119352U 1988-09-13 1988-09-13 半導体受光素子 Expired - Lifetime JPH0741168Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988119352U JPH0741168Y2 (ja) 1988-09-13 1988-09-13 半導体受光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988119352U JPH0741168Y2 (ja) 1988-09-13 1988-09-13 半導体受光素子

Publications (2)

Publication Number Publication Date
JPH0241459U true JPH0241459U (ja) 1990-03-22
JPH0741168Y2 JPH0741168Y2 (ja) 1995-09-20

Family

ID=31364508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988119352U Expired - Lifetime JPH0741168Y2 (ja) 1988-09-13 1988-09-13 半導体受光素子

Country Status (1)

Country Link
JP (1) JPH0741168Y2 (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898989A (ja) * 1981-12-09 1983-06-13 Nec Corp フオトダイオ−ド
JPS612314A (ja) * 1984-06-15 1986-01-08 松下電器産業株式会社 巻回型金属化フイルムコンデンサ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898989A (ja) * 1981-12-09 1983-06-13 Nec Corp フオトダイオ−ド
JPS612314A (ja) * 1984-06-15 1986-01-08 松下電器産業株式会社 巻回型金属化フイルムコンデンサ

Also Published As

Publication number Publication date
JPH0741168Y2 (ja) 1995-09-20

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